JP2007533105A5 - - Google Patents

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Publication number
JP2007533105A5
JP2007533105A5 JP2007508435A JP2007508435A JP2007533105A5 JP 2007533105 A5 JP2007533105 A5 JP 2007533105A5 JP 2007508435 A JP2007508435 A JP 2007508435A JP 2007508435 A JP2007508435 A JP 2007508435A JP 2007533105 A5 JP2007533105 A5 JP 2007533105A5
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JP
Japan
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JP2007508435A
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English (en)
Japanese (ja)
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JP2007533105A (ja
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Priority claimed from PCT/US2005/012244 external-priority patent/WO2005099410A2/en
Publication of JP2007533105A publication Critical patent/JP2007533105A/ja
Publication of JP2007533105A5 publication Critical patent/JP2007533105A5/ja
Pending legal-status Critical Current

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JP2007508435A 2004-04-12 2005-04-12 単極双投memsスイッチ Pending JP2007533105A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US56119204P 2004-04-12 2004-04-12
US62993104P 2004-11-23 2004-11-23
PCT/US2005/012244 WO2005099410A2 (en) 2004-04-12 2005-04-12 Single-pole, double-throw mems switch

Publications (2)

Publication Number Publication Date
JP2007533105A JP2007533105A (ja) 2007-11-15
JP2007533105A5 true JP2007533105A5 (https=) 2008-05-29

Family

ID=35150451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007508435A Pending JP2007533105A (ja) 2004-04-12 2005-04-12 単極双投memsスイッチ

Country Status (5)

Country Link
US (1) US7816999B2 (https=)
EP (1) EP1756848A4 (https=)
JP (1) JP2007533105A (https=)
KR (1) KR20060133057A (https=)
WO (1) WO2005099410A2 (https=)

Families Citing this family (6)

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KR100661602B1 (ko) * 2005-12-09 2006-12-26 삼성전기주식회사 수직 구조 질화갈륨계 led 소자의 제조방법
US20080175159A1 (en) * 2006-12-13 2008-07-24 Panduit Corp. High Performance Three-Port Switch for Managed Ethernet Systems
US9159514B2 (en) * 2013-11-18 2015-10-13 Tyco Electronics Corporation Relay connector assembly for a relay system
CN104183425B (zh) * 2014-08-29 2016-03-02 电子科技大学 一种射频mems单刀双掷开关
US9758366B2 (en) 2015-12-15 2017-09-12 International Business Machines Corporation Small wafer area MEMS switch
EP4464657B1 (de) * 2023-05-05 2025-12-10 Hahn-Schickard-Gesellschaft für angewandte Forschung e. V. Halbleiterbauteil umfassend einen mems-sensor oder mems-aktuator sowie verfahren zu dessen herstellung

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