JP2007533105A - 単極双投memsスイッチ - Google Patents
単極双投memsスイッチ Download PDFInfo
- Publication number
- JP2007533105A JP2007533105A JP2007508435A JP2007508435A JP2007533105A JP 2007533105 A JP2007533105 A JP 2007533105A JP 2007508435 A JP2007508435 A JP 2007508435A JP 2007508435 A JP2007508435 A JP 2007508435A JP 2007533105 A JP2007533105 A JP 2007533105A
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- JP
- Japan
- Prior art keywords
- layer
- toggle
- mems switch
- material layer
- frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 53
- 239000004020 conductor Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 22
- 230000004927 fusion Effects 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 239000007767 bonding agent Substances 0.000 claims 1
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 124
- 235000012431 wafers Nutrition 0.000 description 92
- 239000011521 glass Substances 0.000 description 50
- 229910052751 metal Inorganic materials 0.000 description 47
- 239000002184 metal Substances 0.000 description 47
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000010931 gold Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000005459 micromachining Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000005394 sealing glass Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 235000014676 Phragmites communis Nutrition 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- WVBBLATZSOLERT-UHFFFAOYSA-N gold tungsten Chemical compound [W].[Au] WVBBLATZSOLERT-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
Landscapes
- Micromachines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56119204P | 2004-04-12 | 2004-04-12 | |
| US62993104P | 2004-11-23 | 2004-11-23 | |
| PCT/US2005/012244 WO2005099410A2 (en) | 2004-04-12 | 2005-04-12 | Single-pole, double-throw mems switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007533105A true JP2007533105A (ja) | 2007-11-15 |
| JP2007533105A5 JP2007533105A5 (https=) | 2008-05-29 |
Family
ID=35150451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007508435A Pending JP2007533105A (ja) | 2004-04-12 | 2005-04-12 | 単極双投memsスイッチ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7816999B2 (https=) |
| EP (1) | EP1756848A4 (https=) |
| JP (1) | JP2007533105A (https=) |
| KR (1) | KR20060133057A (https=) |
| WO (1) | WO2005099410A2 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100661602B1 (ko) * | 2005-12-09 | 2006-12-26 | 삼성전기주식회사 | 수직 구조 질화갈륨계 led 소자의 제조방법 |
| US20080175159A1 (en) * | 2006-12-13 | 2008-07-24 | Panduit Corp. | High Performance Three-Port Switch for Managed Ethernet Systems |
| US9159514B2 (en) * | 2013-11-18 | 2015-10-13 | Tyco Electronics Corporation | Relay connector assembly for a relay system |
| CN104183425B (zh) * | 2014-08-29 | 2016-03-02 | 电子科技大学 | 一种射频mems单刀双掷开关 |
| US9758366B2 (en) | 2015-12-15 | 2017-09-12 | International Business Machines Corporation | Small wafer area MEMS switch |
| EP4464657B1 (de) * | 2023-05-05 | 2025-12-10 | Hahn-Schickard-Gesellschaft für angewandte Forschung e. V. | Halbleiterbauteil umfassend einen mems-sensor oder mems-aktuator sowie verfahren zu dessen herstellung |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002334645A (ja) * | 2001-04-26 | 2002-11-22 | Samsung Electronics Co Ltd | Memsリレイ及びその製造方法 |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4113190C1 (en) | 1991-04-23 | 1992-07-16 | Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De | Electrostatically actuated microswitch - has armature attached to base via torsional struts to allow pivoting for contacting electrodes |
| CA2072199C (en) * | 1991-06-24 | 1997-11-11 | Fumihiro Kasano | Electrostatic relay |
| JP3402642B2 (ja) * | 1993-01-26 | 2003-05-06 | 松下電工株式会社 | 静電駆動型リレー |
| US5388443A (en) * | 1993-06-24 | 1995-02-14 | Manaka; Junji | Atmosphere sensor and method for manufacturing the sensor |
| US5619061A (en) * | 1993-07-27 | 1997-04-08 | Texas Instruments Incorporated | Micromechanical microwave switching |
| US6044705A (en) * | 1993-10-18 | 2000-04-04 | Xros, Inc. | Micromachined members coupled for relative rotation by torsion bars |
| US6426013B1 (en) * | 1993-10-18 | 2002-07-30 | Xros, Inc. | Method for fabricating micromachined members coupled for relative rotation |
| US5488862A (en) * | 1993-10-18 | 1996-02-06 | Armand P. Neukermans | Monolithic silicon rate-gyro with integrated sensors |
| JP3465940B2 (ja) * | 1993-12-20 | 2003-11-10 | 日本信号株式会社 | プレーナー型電磁リレー及びその製造方法 |
| JP3182301B2 (ja) * | 1994-11-07 | 2001-07-03 | キヤノン株式会社 | マイクロ構造体及びその形成法 |
| US5891751A (en) * | 1995-06-02 | 1999-04-06 | Kulite Semiconductor Products, Inc . | Hermetically sealed transducers and methods for producing the same |
| US5578976A (en) * | 1995-06-22 | 1996-11-26 | Rockwell International Corporation | Micro electromechanical RF switch |
| US5861549A (en) * | 1996-12-10 | 1999-01-19 | Xros, Inc. | Integrated Silicon profilometer and AFM head |
| US5895866A (en) * | 1996-01-22 | 1999-04-20 | Neukermans; Armand P. | Micromachined silicon micro-flow meter |
| EP1012890A1 (en) * | 1997-04-01 | 2000-06-28 | Xros, Inc. | Adjusting operating characteristics of micromachined torsional oscillators |
| US5903099A (en) * | 1997-05-23 | 1999-05-11 | Tini Alloy Company | Fabrication system, method and apparatus for microelectromechanical devices |
| DE19823690C1 (de) | 1998-05-27 | 2000-01-05 | Siemens Ag | Mikromechanisches elektrostatisches Relais |
| KR100620341B1 (ko) * | 1998-09-02 | 2006-09-13 | 엑스로스, 인크. | 비틀림 굴곡 힌지에 의해 상대 회전하도록 연결된 미세가공 구조체 |
| US6326682B1 (en) * | 1998-12-21 | 2001-12-04 | Kulite Semiconductor Products | Hermetically sealed transducer and methods for producing the same |
| US6410360B1 (en) * | 1999-01-26 | 2002-06-25 | Teledyne Industries, Inc. | Laminate-based apparatus and method of fabrication |
| US6069540A (en) * | 1999-04-23 | 2000-05-30 | Trw Inc. | Micro-electro system (MEMS) switch |
| US6228675B1 (en) * | 1999-07-23 | 2001-05-08 | Agilent Technologies, Inc. | Microcap wafer-level package with vias |
| US6452238B1 (en) | 1999-10-04 | 2002-09-17 | Texas Instruments Incorporated | MEMS wafer level package |
| US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
| US6307169B1 (en) * | 2000-02-01 | 2001-10-23 | Motorola Inc. | Micro-electromechanical switch |
| DE10004393C1 (de) * | 2000-02-02 | 2002-02-14 | Infineon Technologies Ag | Mikrorelais |
| US6441481B1 (en) * | 2000-04-10 | 2002-08-27 | Analog Devices, Inc. | Hermetically sealed microstructure package |
| KR100370398B1 (ko) * | 2000-06-22 | 2003-01-30 | 삼성전자 주식회사 | 전자 및 mems 소자의 표면실장형 칩 규모 패키징 방법 |
| US6465281B1 (en) * | 2000-09-08 | 2002-10-15 | Motorola, Inc. | Method of manufacturing a semiconductor wafer level package |
| US6535091B2 (en) * | 2000-11-07 | 2003-03-18 | Sarnoff Corporation | Microelectronic mechanical systems (MEMS) switch and method of fabrication |
| US20020146919A1 (en) | 2000-12-29 | 2002-10-10 | Cohn Michael B. | Micromachined springs for strain relieved electrical connections to IC chips |
| US6537892B2 (en) * | 2001-02-02 | 2003-03-25 | Delphi Technologies, Inc. | Glass frit wafer bonding process and packages formed thereby |
| US6756310B2 (en) * | 2001-09-26 | 2004-06-29 | Rockwell Automation Technologies, Inc. | Method for constructing an isolate microelectromechanical system (MEMS) device using surface fabrication techniques |
| US6589625B1 (en) * | 2001-08-01 | 2003-07-08 | Iridigm Display Corporation | Hermetic seal and method to create the same |
| US6507097B1 (en) * | 2001-11-29 | 2003-01-14 | Clarisay, Inc. | Hermetic package for pyroelectric-sensitive electronic device and method of manufacturing the same |
| US6624003B1 (en) * | 2002-02-06 | 2003-09-23 | Teravicta Technologies, Inc. | Integrated MEMS device and package |
| US6603182B1 (en) * | 2002-03-12 | 2003-08-05 | Lucent Technologies Inc. | Packaging micromechanical devices |
| US6701779B2 (en) * | 2002-03-21 | 2004-03-09 | International Business Machines Corporation | Perpendicular torsion micro-electromechanical switch |
| KR100997929B1 (ko) | 2002-08-03 | 2010-12-02 | 시베르타 인코퍼레이티드 | 밀봉된 일체식 멤스 스위치 |
| US7551048B2 (en) | 2002-08-08 | 2009-06-23 | Fujitsu Component Limited | Micro-relay and method of fabricating the same |
| US6806557B2 (en) * | 2002-09-30 | 2004-10-19 | Motorola, Inc. | Hermetically sealed microdevices having a single crystalline silicon getter for maintaining vacuum |
| KR100451409B1 (ko) * | 2002-10-15 | 2004-10-06 | 한국전자통신연구원 | 마이크로 광스위치 및 그 제조방법 |
| US7045868B2 (en) | 2003-07-31 | 2006-05-16 | Motorola, Inc. | Wafer-level sealed microdevice having trench isolation and methods for making the same |
| US7087134B2 (en) * | 2004-03-31 | 2006-08-08 | Hewlett-Packard Development Company, L.P. | System and method for direct-bonding of substrates |
| US7407826B2 (en) * | 2005-03-21 | 2008-08-05 | Honeywell International Inc. | Vacuum packaged single crystal silicon device |
| US7449765B2 (en) * | 2006-02-27 | 2008-11-11 | Texas Instruments Incorporated | Semiconductor device and method of fabrication |
-
2005
- 2005-04-12 EP EP05733976A patent/EP1756848A4/en not_active Withdrawn
- 2005-04-12 JP JP2007508435A patent/JP2007533105A/ja active Pending
- 2005-04-12 KR KR1020067022064A patent/KR20060133057A/ko not_active Ceased
- 2005-04-12 US US11/578,012 patent/US7816999B2/en not_active Expired - Fee Related
- 2005-04-12 WO PCT/US2005/012244 patent/WO2005099410A2/en not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002334645A (ja) * | 2001-04-26 | 2002-11-22 | Samsung Electronics Co Ltd | Memsリレイ及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7816999B2 (en) | 2010-10-19 |
| WO2005099410A3 (en) | 2007-08-23 |
| WO2005099410A2 (en) | 2005-10-27 |
| KR20060133057A (ko) | 2006-12-22 |
| EP1756848A4 (en) | 2009-12-23 |
| EP1756848A2 (en) | 2007-02-28 |
| US20070205087A1 (en) | 2007-09-06 |
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Legal Events
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| A521 | Request for written amendment filed |
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