JP2007529899A - エッチング特性を改良するためのハードマスクを処理する方法およびシステム。 - Google Patents

エッチング特性を改良するためのハードマスクを処理する方法およびシステム。 Download PDF

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Publication number
JP2007529899A
JP2007529899A JP2007503903A JP2007503903A JP2007529899A JP 2007529899 A JP2007529899 A JP 2007529899A JP 2007503903 A JP2007503903 A JP 2007503903A JP 2007503903 A JP2007503903 A JP 2007503903A JP 2007529899 A JP2007529899 A JP 2007529899A
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Japan
Prior art keywords
hard mask
layer
plasma
substrate
photosensitive material
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Withdrawn
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JP2007503903A
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English (en)
Japanese (ja)
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JP2007529899A5 (https=
Inventor
モスデン、アエラン
ファン、ダング
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JP2007529899A publication Critical patent/JP2007529899A/ja
Publication of JP2007529899A5 publication Critical patent/JP2007529899A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP2007503903A 2004-03-17 2005-02-10 エッチング特性を改良するためのハードマスクを処理する方法およびシステム。 Withdrawn JP2007529899A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/801,571 US7291446B2 (en) 2004-03-17 2004-03-17 Method and system for treating a hard mask to improve etch characteristics
PCT/US2005/004047 WO2005091796A2 (en) 2004-03-17 2005-02-10 Method and system for treating a hard mask to improve etch characteristics

Publications (2)

Publication Number Publication Date
JP2007529899A true JP2007529899A (ja) 2007-10-25
JP2007529899A5 JP2007529899A5 (https=) 2008-03-27

Family

ID=34986730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007503903A Withdrawn JP2007529899A (ja) 2004-03-17 2005-02-10 エッチング特性を改良するためのハードマスクを処理する方法およびシステム。

Country Status (4)

Country Link
US (1) US7291446B2 (https=)
JP (1) JP2007529899A (https=)
TW (1) TWI295815B (https=)
WO (1) WO2005091796A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009104507A1 (ja) * 2008-02-19 2009-08-27 東京エレクトロン株式会社 薄膜およびその薄膜を用いた半導体装置の製造方法
JP2011082260A (ja) * 2009-10-05 2011-04-21 Asahi Kasei Corp ドライエッチング方法
KR20150107584A (ko) * 2014-03-14 2015-09-23 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 집적 회로 패터닝 방법
WO2022219977A1 (ja) * 2021-04-14 2022-10-20 東京エレクトロン株式会社 基板処理方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153780B2 (en) * 2004-03-24 2006-12-26 Intel Corporation Method and apparatus for self-aligned MOS patterning
US7497959B2 (en) 2004-05-11 2009-03-03 International Business Machines Corporation Methods and structures for protecting one area while processing another area on a chip
KR100694412B1 (ko) * 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
TW200806567A (en) * 2006-07-26 2008-02-01 Touch Micro System Tech Method of deep etching
KR100829603B1 (ko) * 2006-11-23 2008-05-14 삼성전자주식회사 에어 갭을 갖는 반도체 소자의 제조 방법
US8980706B2 (en) * 2008-09-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Double treatment on hard mask for gate N/P patterning
US9058983B2 (en) 2013-06-17 2015-06-16 International Business Machines Corporation In-situ hardmask generation
US10043672B2 (en) * 2016-03-29 2018-08-07 Lam Research Corporation Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask
US10690821B1 (en) * 2018-12-14 2020-06-23 Applied Materials, Inc. Methods of producing slanted gratings
US11424123B2 (en) * 2020-02-25 2022-08-23 Tokyo Electron Limited Forming a semiconductor feature using atomic layer etch
KR20210126214A (ko) * 2020-04-10 2021-10-20 에스케이하이닉스 주식회사 반도체 장치 제조방법
US20260011555A1 (en) * 2024-07-02 2026-01-08 Tokyo Electron Limited Selective deposition on an existing patterned mask

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
JPH0775226B2 (ja) * 1990-04-10 1995-08-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ処理方法及び装置
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US7816188B2 (en) * 2001-07-30 2010-10-19 Sandisk 3D Llc Process for fabricating a dielectric film using plasma oxidation
JP2003209046A (ja) * 2002-01-16 2003-07-25 Mitsubishi Electric Corp レジストパターン形成方法および半導体装置の製造方法
US6984529B2 (en) * 2003-09-10 2006-01-10 Infineon Technologies Ag Fabrication process for a magnetic tunnel junction device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009104507A1 (ja) * 2008-02-19 2009-08-27 東京エレクトロン株式会社 薄膜およびその薄膜を用いた半導体装置の製造方法
JP2011082260A (ja) * 2009-10-05 2011-04-21 Asahi Kasei Corp ドライエッチング方法
KR20150107584A (ko) * 2014-03-14 2015-09-23 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 집적 회로 패터닝 방법
KR101671592B1 (ko) * 2014-03-14 2016-11-01 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 집적 회로 패터닝 방법
WO2022219977A1 (ja) * 2021-04-14 2022-10-20 東京エレクトロン株式会社 基板処理方法
JP2022163526A (ja) * 2021-04-14 2022-10-26 東京エレクトロン株式会社 基板処理方法
JP7773277B2 (ja) 2021-04-14 2025-11-19 東京エレクトロン株式会社 基板処理方法

Also Published As

Publication number Publication date
TW200534380A (en) 2005-10-16
TWI295815B (en) 2008-04-11
WO2005091796A3 (en) 2005-12-15
WO2005091796A2 (en) 2005-10-06
US7291446B2 (en) 2007-11-06
US20050208434A1 (en) 2005-09-22

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