JP2007515292A - 磁気活性形状記憶金属合金の製造方法 - Google Patents
磁気活性形状記憶金属合金の製造方法 Download PDFInfo
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- JP2007515292A JP2007515292A JP2005503325A JP2005503325A JP2007515292A JP 2007515292 A JP2007515292 A JP 2007515292A JP 2005503325 A JP2005503325 A JP 2005503325A JP 2005503325 A JP2005503325 A JP 2005503325A JP 2007515292 A JP2007515292 A JP 2007515292A
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- metal alloy
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- gallium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Hard Magnetic Materials (AREA)
Abstract
【選択図】なし
Description
Claims (12)
- ニッケル、マンガンおよびガリウムを含有する磁気活性形状記憶金属合金を製造する方法において、該金属合金のさまざまな成分を溶解し、該溶解物を実質的に溶解温度で均質化し、得られた金属合金を鋳造し、鋳造金属合金を該金属合金の液化温度より低い10〜1000Cで方向性凝固にかけることを特徴とする磁気活性形状記憶金属合金の製造方法。
- 請求項1に記載の方法において、ニッケル、マンガンおよびガリウムを含有する金属合金の製造において、使用するマンガンおよびガリウムを先ず溶解してニッケル−マンガンおよび/またはニッケル−ガリウムの母合金にし、これを冷却して粉砕し、該母合金に貴金属を追加して該金属合金自体を製造することを特徴とする方法。
- 請求項1または2に記載の方法において、前記金属合金自体の溶解は約13000Cの温度で行なうことを特徴とする方法。
- 請求項1、2または3に記載の方法において、前記金属合金自体は、該合金を溶解温度に約1時間保つことによって均質化することを特徴とする方法。
- 前記請求項のいずれかに記載の方法において、前記金属合金自体の製造工程は、不活性ガス雰囲気で行なうことを特徴とする方法。
- 前記請求項のいずれかに記載の方法において、揮発性成分、すなわちマンガンおよびガリウムの揮散を防ぐために、前記金属合金自体の製造に用いる炉の負圧は、20〜200ミリバールの範囲内で調節することを特徴とする方法。
- 前記請求項のいずれかに記載の方法において、凝固速度は0.1〜50ミリメートル/分の範囲内あることを特徴とする方法。
- 請求項7に記載の方法において、前記凝固速度は1〜20ミリメートル/分の範囲内であることを特徴とする方法。
- 前記請求項のいずれかに記載の方法において、鋳造物は800〜10000Cの温度範囲内で均質化することを特徴とする方法。
- 前記請求項のいずれかに記載の方法において、前記金属合金のニッケル含有量は45〜60原子%の範囲内であることを特徴とする方法。
- 前記請求項のいずれかに記載の方法において、前記金属合金のマンガン含有量を15〜35原子%の範囲内になることを特徴とする方法。
- 前記請求項のいずれかに記載の方法において、前記金属合金のガリウム含有量は15〜30原子%の範囲内であることを特徴とする方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/FI2003/000538 WO2005002762A1 (en) | 2003-07-03 | 2003-07-03 | Method for producing magnetically active shape memory metal alloy |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007515292A true JP2007515292A (ja) | 2007-06-14 |
JP4303241B2 JP4303241B2 (ja) | 2009-07-29 |
Family
ID=33560943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005503325A Expired - Fee Related JP4303241B2 (ja) | 2003-07-03 | 2003-07-03 | 磁気活性形状記憶金属合金の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7547367B2 (ja) |
EP (1) | EP1648636A1 (ja) |
JP (1) | JP4303241B2 (ja) |
CN (1) | CN100406160C (ja) |
AU (1) | AU2003238135A1 (ja) |
WO (1) | WO2005002762A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8349099B1 (en) * | 2006-12-01 | 2013-01-08 | Ormco Corporation | Method of alloying reactive components |
CN104711471B (zh) * | 2015-04-02 | 2017-05-10 | 中国科学院宁波材料技术与工程研究所 | 一种NiMnX合金靶材的制备方法 |
WO2017069835A2 (en) | 2015-08-07 | 2017-04-27 | University Of Southern California | Using noise to speed convergence of simulated annealing and markov monte carlo estimations |
CN107537994A (zh) * | 2017-08-28 | 2018-01-05 | 上海大学 | 磁场辅助定向凝固制备强织构化多晶磁控形状记忆材料的方法 |
US11450516B2 (en) * | 2019-08-14 | 2022-09-20 | Honeywell International Inc. | Large-grain tin sputtering target |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3881741B2 (ja) * | 1997-03-19 | 2007-02-14 | Necトーキン株式会社 | NiMnGa合金 |
-
2003
- 2003-07-03 AU AU2003238135A patent/AU2003238135A1/en not_active Abandoned
- 2003-07-03 CN CNB038267136A patent/CN100406160C/zh not_active Expired - Fee Related
- 2003-07-03 JP JP2005503325A patent/JP4303241B2/ja not_active Expired - Fee Related
- 2003-07-03 WO PCT/FI2003/000538 patent/WO2005002762A1/en active Application Filing
- 2003-07-03 EP EP03735752A patent/EP1648636A1/en not_active Withdrawn
- 2003-07-03 US US10/563,173 patent/US7547367B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2005002762A1 (en) | 2005-01-13 |
US7547367B2 (en) | 2009-06-16 |
US20070102067A1 (en) | 2007-05-10 |
EP1648636A1 (en) | 2006-04-26 |
AU2003238135A1 (en) | 2005-01-21 |
CN100406160C (zh) | 2008-07-30 |
JP4303241B2 (ja) | 2009-07-29 |
CN1812858A (zh) | 2006-08-02 |
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