JP2007513524A - 垂直結合広域増幅器 - Google Patents
垂直結合広域増幅器 Download PDFInfo
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- JP2007513524A JP2007513524A JP2006542757A JP2006542757A JP2007513524A JP 2007513524 A JP2007513524 A JP 2007513524A JP 2006542757 A JP2006542757 A JP 2006542757A JP 2006542757 A JP2006542757 A JP 2006542757A JP 2007513524 A JP2007513524 A JP 2007513524A
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- Prior art keywords
- waveguide
- layer
- undoped
- ridge
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3215—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities graded composition cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Geometry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (10)
- 非ドープ導波路と、
前記非ドープ導波路の上に位置するリッジ導波路と、
前記非ドープ導波路とリッジ導波路の間にある少なくとも1つのドープ層とを含み、
前記非ドープ導波路とリッジ導波路が協働して前記非ドープ導波路への光入力を増幅することを特徴とするモノリシック光増幅システム。 - 前記非ドープ導波路がAlGaAsを含むことを特徴とする請求項1に記載のシステム。
- 前記ドープ層がn−AlGaAsを含むことを特徴とする請求項2に記載のシステム。
- 前記n−AlGaAsが1×1018cm−3程度ドープされていることを特徴とする請求項3に記載のシステム。
- 前記リッジ導波路がInGaAsを含むことを特徴とする請求項1に記載のシステム。
- 前記リッジ導波路の上に位置するp−AlGaAsクラッドをさらに含むことを特徴とする請求項1に記載のシステム。
- 前記クラッドと前記ドープ層とが高濃度にドープされていることを特徴とする請求項6に記載のシステム。
- 少なくとも第2の非ドープ導波路と、
前記第2の非ドープ導波路の上に位置する少なくとも第2のリッジ導波路と、
前記第2の非ドープ導波路と第2のリッジ導波路の間にある少なくとも第2のドープ層とをさらに含むことを特徴とする請求項1に記載のシステム。 - 前記第1および第2の導波路が、光ファイバ及び少なくとも1つの平面導波路のうちの少なくとも1つを介して互いに光学的に結合されていることを特徴とする請求項8に記載のシステム。
- 光源及び光スイッチのうち少なくとも1つをさらに含むことを特徴とする請求項1に記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52617203P | 2003-12-02 | 2003-12-02 | |
PCT/US2004/040420 WO2005057251A2 (en) | 2003-12-02 | 2004-12-02 | Primary examiner |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007513524A true JP2007513524A (ja) | 2007-05-24 |
Family
ID=34676599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006542757A Abandoned JP2007513524A (ja) | 2003-12-02 | 2004-12-02 | 垂直結合広域増幅器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7376319B2 (ja) |
EP (1) | EP1697769A4 (ja) |
JP (1) | JP2007513524A (ja) |
WO (1) | WO2005057251A2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070147761A1 (en) * | 2005-10-07 | 2007-06-28 | Kwakernaak Martin H | Amorphous silicon waveguides on lll/V substrates with barrier layer |
US9429693B2 (en) * | 2012-09-25 | 2016-08-30 | Nec Corporation | High-order mode filter |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5985685A (en) * | 1994-02-24 | 1999-11-16 | British Telecommunications Public Limited Company | Method for making optical device with composite passive and tapered active waveguide regions |
US6229947B1 (en) * | 1997-10-06 | 2001-05-08 | Sandia Corporation | Tapered rib fiber coupler for semiconductor optical devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3899235A (en) * | 1974-03-11 | 1975-08-12 | Bell Telephone Labor Inc | Slab-coupled optical waveguide |
US5220573A (en) * | 1989-03-10 | 1993-06-15 | Canon Kabushiki Kaisha | Optical apparatus using wavelength selective photocoupler |
US5140149A (en) * | 1989-03-10 | 1992-08-18 | Canon Kabushiki Kaisha | Optical apparatus using wavelength selective photocoupler |
US6157765A (en) * | 1998-11-03 | 2000-12-05 | Lucent Technologies | Planar waveguide optical amplifier |
US6928223B2 (en) * | 2000-07-14 | 2005-08-09 | Massachusetts Institute Of Technology | Stab-coupled optical waveguide laser and amplifier |
US6836357B2 (en) * | 2001-10-04 | 2004-12-28 | Gazillion Bits, Inc. | Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof |
-
2004
- 2004-12-02 WO PCT/US2004/040420 patent/WO2005057251A2/en active Application Filing
- 2004-12-02 US US11/002,403 patent/US7376319B2/en not_active Expired - Fee Related
- 2004-12-02 JP JP2006542757A patent/JP2007513524A/ja not_active Abandoned
- 2004-12-02 EP EP04812853A patent/EP1697769A4/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5985685A (en) * | 1994-02-24 | 1999-11-16 | British Telecommunications Public Limited Company | Method for making optical device with composite passive and tapered active waveguide regions |
US6229947B1 (en) * | 1997-10-06 | 2001-05-08 | Sandia Corporation | Tapered rib fiber coupler for semiconductor optical devices |
Also Published As
Publication number | Publication date |
---|---|
US20050147356A1 (en) | 2005-07-07 |
WO2005057251A3 (en) | 2006-12-07 |
US7376319B2 (en) | 2008-05-20 |
EP1697769A2 (en) | 2006-09-06 |
WO2005057251A2 (en) | 2005-06-23 |
EP1697769A4 (en) | 2009-03-18 |
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