JP2007327088A - Unit of raw material for vacuum vapor deposition, evaporation source for vacuum vapor deposition, and vacuum vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a unit of raw materials for vacuum vapor deposition, which can stably preserve an organic compound, inhibit the raw materials from causing bumping during a vacuum vapor deposition process, and stably form a thin film; an evaporation source for vacuum vapor deposition; and a vacuum vapor deposition apparatus. <P>SOLUTION: The unit of the raw materials for vacuum vapor deposition has a shape of an approximate cylindrical ampoule that accommodates the materials for a thin film therein, which are used in a vacuum vapor deposition apparatus or in a vacuum vapor deposition method for forming the thin film on the surface of a substrate by vaporizing the materials for the thin film, accommodates a member for inhibiting the raw materials from causing bumping when the materials for the thin film evaporate, and tightly seals them up therein together with an inert gas or dry air. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a vacuum deposition material unit, a vacuum deposition evaporation source, and a vacuum deposition apparatus.

Thin films with antifouling, water repellency and oil repellency have been put to practical use by vacuum deposition using fluorine-containing organosilicon compounds as raw materials, and antifouling on glass surfaces of various lenses, liquid crystal display devices, scanners, etc. A film is formed as a treatment.
For example, as a method of forming an antifouling layer for a lens, a film forming step for forming a thin film using a fluorine-containing organosilicon compound having a perfluoropolyalkylene ether structure and a siloxane structure in the molecule as a deposition source is provided. A method for producing a thin film is known (Patent Document 1).
Moreover, when producing a plastic molded product having a precise shape, it is difficult to release the molded product from the molding die without impairing the precise shape. For example, when applying a release agent to the mold surface in-line, it is difficult to obtain a mold for stably molding a precise shape, and optical parts such as plastic lenses that require submicron-order shape control It cannot be applied. In addition to the cost of the release agent, which is an auxiliary material, a device or man-hour for applying the release agent to the mold is required, and further, it is inevitable that the release agent adheres to the product. A cleaning step is also required to remove it. This makes the cost and environment worse. In some cases, a mold release layer is provided on the surface of the mold in advance by performing DLC (diamond-like carbon) or TiN (titanium nitride) based surface treatment that facilitates mold release (Patent Document 2). However, any of the release layers has insufficient release properties from the molded product, and the product yield is lowered by losing the shape when the molded product is taken out.

As a method for forming a release layer in place of the above method, there is a vacuum vapor deposition method which is a kind of physical vapor deposition (PVD).
The vacuum deposition method heats and evaporates the solid or granular thin film material filled in the material unit of the evaporation source for vacuum deposition installed in the vacuum deposition apparatus in a high vacuum exceeding about 10 ⁻⁴ Pa. In this method, a thin film is formed by depositing vapor on a surface of a substrate that is disposed opposite to a thin film material and maintained at a constant temperature.
In the vacuum evaporation method, a high-purity thin film can be formed at a high film formation rate without changing the structure of a polymer that becomes a thin film during vapor deposition by forming the film under a high vacuum. In order to use the thin film raw material as a vapor, a heating method is frequently used. Examples of the heating method include a resistance heating method, an electron beam method, and a laser method (laser ablation).
As a fluorine-containing thin film forming method using the vacuum deposition method, a method of forming an antifouling thin film on the surface of an optical member such as a lens is disclosed (Patent Document 3).
In addition, for release related to nano ink printing, a thin film having a thickness of several nm is formed by immersion in a release agent or vapor deposition of a release agent, and used as a release film.

Conventionally, as a vacuum deposition apparatus for forming an organic EL element, an organic compound container that does not allow the vapor of an organic compound, which is a material of an organic thin film, to adhere to the vicinity of the discharge port, an organic evaporation source, and a carbon graphite as a vacuum deposition apparatus An organic compound container made of silicon carbide or carbon graphite coated with silicon carbide is known (Patent Document 4).
In addition, as a sublimable substance vacuum vapor deposition apparatus for evaporating a vapor deposition material with a reaction in a storage container, the storage container is provided with a storage container that surrounds and stores the vapor deposition substance, and the storage container is made of boron nitride or magnesium oxide. A lid having a slit-like nozzle having a smaller cross-sectional area than the evaporation area of the substance is provided in the storage container, and the lid is made of boron nitride or magnesium oxide, and the object to be heated is installed around the nozzle of the lid. There is known a vacuum vapor deposition apparatus in which the object to be heated is graphite (Patent Document 5).

However, when forming a thin film of an organic compound such as a fluorine-containing organic silicon compound or a fluorine-containing organic compound by a vacuum vapor deposition method, these organic compounds are liquid at room temperature or become liquid when evaporated by at least heating. Therefore, in the conventional crucible type vacuum deposition storage container, there is a problem that the bumping phenomenon of the thin film raw material occurs in the container at the time of vacuum deposition, and the inside of the vacuum deposition apparatus is contaminated or a uniform thin film cannot be formed. is there.
In particular, organic compounds such as organosilicon compounds and fluorine-containing organosilicon compounds have a problem that when a thin film is formed after long-term storage, a predetermined target thin film cannot be obtained.
JP 2005-187936 A JP-A-5-169594 Japanese Patent Laid-Open No. 11-071665 JP 10-251838 A JP-A-7-316783

  The present invention has been made to address the above problems, and can stably store an organic compound, suppress the occurrence of bumping phenomenon during vacuum deposition, and can stably form a thin film. It aims at providing the raw material unit for vacuum evaporation, the evaporation source for vacuum evaporation, and a vacuum evaporation apparatus.

As a result of research on the cause of bumping, it was found that bumping occurs because the thin film raw material is heated unevenly.
In addition, as a result of research on the reason why a thin film cannot be stably formed, it was found that a thin film raw material, which is an organic material, is chemically active and deteriorates by being left in an air atmosphere for a long time. The present invention has been made based on such findings.
The vacuum vapor deposition material unit of the present invention is a substantially cylindrical ampoule-shaped vacuum vapor deposition material unit containing a thin film material used in a vacuum vapor deposition apparatus or vacuum vapor deposition method for evaporating a thin film raw material to form a thin film on a substrate surface. In addition to the thin film material used in one batch process, a bumping suppression member that suppresses bumping when the thin film material evaporates is housed and hermetically sealed together with inert gas or dry air. It is characterized by.
The bumping suppression member housed in the raw material unit is formed of a material having a higher thermal conductivity than the thin film raw material.
The substantially cylindrical ampule shape has an internal volume that is five times or more the amount of the thin film raw material used in one batch process, and the opening diameter and ampule barrel depth when the ampule tip is cut off. The ratio is 0.5 or less.
Further, the substantially cylindrical ampoule shape is made of glass.

The evaporation source for vacuum vapor deposition of the present invention is installed in a vacuum vapor deposition apparatus that evaporates the thin film raw material to form a thin film on the surface of the substrate, and the vacuum vapor deposition source is the above-described vacuum vapor deposition raw material unit of the present invention, A heat transfer cylinder for transferring heat to the periphery of the raw material unit and a heat source for heating the heat transfer cylinder are provided.
Further, at least a portion of the heat transfer cylinder that contacts the raw material unit is made of a material mainly composed of graphite.

  The vacuum evaporation apparatus of the present invention is characterized in that the evaporation source for vacuum evaporation of the present invention is installed in an apparatus for evaporating an organic thin film raw material to form a thin film on a substrate surface.

The raw material unit for vacuum vapor deposition of the present invention contains a thin film raw material used in one batch process and a bumping suppression member that suppresses bumping when the thin film raw material evaporates, and is hermetically sealed together with an inert gas or dry air. Since it is stopped, bumping in vacuum deposition can be suppressed. In addition, it is possible to form a stable organic thin film by vacuum deposition method by preventing the deterioration of the thin film raw material.
In particular, since the bumping suppression member is made of a material having a higher thermal conductivity than the thin film material, the thin film material can be heated uniformly. In addition, the substantially cylindrical ampule shape has an internal volume that is 5 times or more the amount of the thin film raw material used in one batch process, and the ratio of the opening diameter when the ampule tip is cut off to the depth of the ampule barrel. Therefore, even if bumping occurs, it is possible to suppress the splashing of the material from the vacuum deposition material unit.
In addition, since it is an internal volume vacuum deposition material unit that can store the amount of thin film material that can be used in one batch process, it is not necessary to store the thin film material after use. Therefore, at the time of vapor deposition, an unused thin film raw material is opened and used, so that an organic thin film can be stably formed by a vacuum vapor deposition method.

The evaporation source for vacuum vapor deposition of the present invention includes the above-described vacuum vapor deposition raw material unit, a heat transfer cylinder for transferring heat around the raw material unit, and a heat source for heating the heat transfer cylinder. The inner thin film material can be heated uniformly from the surroundings.
In particular, since the portion in contact with the raw material unit is made of a material mainly composed of graphite, it has excellent thermal conductivity and can heat the thin film raw material more uniformly.

  The vacuum evaporation apparatus of the present invention is provided with the above evaporation source for vacuum evaporation in an apparatus for forming a thin film on the surface of a substrate by evaporating an organic thin film raw material, thereby reducing the quality of the thin film and improving the yield. A thin film can be formed stably.

  A vacuum deposition material unit used in the vacuum deposition apparatus and the vacuum deposition method of the present invention will be described with reference to the drawings. FIG. 1 is a view showing a vacuum vapor deposition apparatus, and FIG. 2 is a cross-sectional view for explaining a vacuum vapor deposition raw material unit.

As shown in FIG. 2A, the raw material unit 4 has a thin film raw material 11 and a bumping suppression member 12 housed in a substantially cylindrical ampoule-shaped container. The ampoule-shaped container (hereinafter referred to as ampoule 5) of the raw material unit 4 is composed of a tip portion 5a and a trunk portion 5b, and a joint portion between the tip portion 5a and the trunk portion 5b is constricted to form a neck portion 5c.
The raw material unit 4 stores and stores the thin film raw material 11, and is heated together with the raw material unit 4 when forming a thin film and serves as a crucible.

  The thin film raw material 11 and the bumping suppression member 12 are weighed and put into the ampule 5 of the raw material unit 4 and filled with an inert gas or the like and sealed. The raw material unit 4 is stored in this state (FIG. 2A).

  Here, the amount of the thin film raw material stored in one raw material unit is an amount that can be used in one batch process, and the ampoule of the raw material unit has a sufficient internal volume that can store this amount. Thereby, it is possible to minimize the deterioration of the thin film material during the operation of weighing the thin film material and filling the heat transfer cylinder described later with the material unit.

  In use, the ampoule tip 5a of the raw material unit 4 is first folded at the neck 5c and opened (FIG. 2 (b)). The unsealed raw material unit 4 is mounted on the heat transfer cylinder 6 with the opening 5c 'facing upward. At the time of vacuum deposition, the raw material unit 4 is heated and used (FIG. 1).

  The ampule 5 is made of a material that has heat resistance, does not react with the thin film raw material, and does not adhere to the heat transfer cylinder 6. Specifically, it is preferably made of ceramic or glass, and is preferably made of glass for ease of handling. Examples of preferable glass include silica glass and Pyrex glass ("Pyrex" is a registered trademark).

  Even if bumping occurs, it is preferable that the inner volume of the ampoule is sufficiently larger than the volume of the thin film raw material and the opening diameter of the opened ampoule is small in order to reduce the probability of splashing out of the raw material unit. Specifically, the internal volume of the ampoule is five times or more that of the thin film raw material, and the opening diameter of the opening 5c ′ when the tip 5a is cut off by the neck 5c is D1, as shown in FIG. Assuming that the depth of the ampoule barrel from the portion 5c ′ to the bottom of the ampoule barrel 5b is D2, the value of D1 / D2, which is the ratio of the opening diameter to the depth of the ampoule barrel, may be 0.5 or less. preferable.

Thin film raw materials for forming an organic thin film are generally highly reactive, and in particular, many are deteriorated by moisture in the air atmosphere. In order to prevent this during storage, the thin film raw material is hermetically sealed together with an inert gas or dry air in the ampule 5 of the raw material unit 4.
Specifically, nitrogen is preferably used as the inert gas.

  As a raw material for the thin film that can be used in the present invention, a chemically unstable material can be used. Specific examples include fluorine-containing organic compounds such as fluorine-containing organic silicon compounds and fluorine-containing organic compounds.

As the fluorine-containing organic compound, a polymer or copolymer of unit monomers containing an average of one or more fluorine atoms and an organic polymer capable of forming a film can be used. For example, polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene-perfluoroalkyl vinyl ether copolymer, tetrafluoroethylene-hexafluoropropylene copolymer Polymer, tetrafluoroethylene-ethylene copolymer, trifluorochloroethylene polymer, trifluorochloroethylene-ethylene copolymer, polyvinyl fluoride, polyvinylidene fluoride, fluoropolyether polymer, polyfluorosilicone, aliphatic ring Examples thereof include perfluoropolymer having a structure.
Among the above-mentioned fluorine-containing organic compounds, a perfluoro-based polymer is preferable, and at least one double bond or triple bond carbon, —COOH group, or —Si (OR) ₃ group may be included in the molecule. preferable. R is preferably an alkyl group having 1 to 3 carbon atoms. By using this perfluoro polymer, the adhesion to the substrate is excellent.

As the fluorine-containing organic compound preferably used, fluoroalkylsilane TSL8257 (trademark, manufactured by GE Toshiba Silicone) having —Si (OR) ₃ group at the end of the main chain, amorphous perfluoro heavy having an aliphatic ring structure in the main chain Cytop (trademark, manufactured by Asahi Glass Co., Ltd.), which is a coalescence, can be mentioned.

In order to prevent the occurrence of bumping, the thin film material is heated together with a member that suppresses bumping. By heating together with the bumping suppression member, the thin film material is heated uniformly.
In the raw material unit for vacuum vapor deposition of the present invention, a bumping suppression member 12 is previously stored in the ampoule 5 of the raw material unit together with the thin film raw material 11.

  The bumping suppression member 12 is preferably a material that does not chemically react with the thin film raw material 11 and that does not promote deterioration of the thin film raw material 11. Furthermore, in order to raise the temperature of the thin film material 11 uniformly, a material having a higher thermal conductivity than that of the thin film material 11 is preferable. Specific examples thereof include graphite and the like, and thread-like, net-like, cloth-like, felt-like or porous graphite is preferably used.

The evaporation source for vacuum evaporation of the present invention will be described.
The evaporation source for vacuum vapor deposition includes the above-described vacuum vapor deposition raw material unit 4, a heat transfer cylinder 6 that transfers heat around the raw material unit 4, and a heating device 10 that is a heat source for heating the heat transfer cylinder 6. (See FIG. 1).

The material of the heat transfer cylinder 6 is preferably a material having a high thermal conductivity. By using a heat transfer cylinder made of a material having a high thermal conductivity, the thin film material can be heated uniformly.
Further, at least a portion of the heat transfer cylinder 6 that contacts the ampule 5 of the raw material unit 4 is preferably a material that does not adhere to the ampule 5, and is preferably a material mainly composed of graphite. Alternatively, a metal surface coated with graphite may be used.
The heat transfer cylinder 6 is heated by being covered with a heating device 10 using a filament of a refractory metal such as tantalum (Ta), molybdenum (Mo), tungsten (W), a sheathed heater, an infrared lamp heater or the like. Is done.

  The vacuum evaporation apparatus of this invention is demonstrated. A thin film formed by vacuum vapor deposition is obtained by heating the thin film raw material in the vacuum vapor deposition apparatus shown in FIG. 1 and depositing evaporated vapor on the substrate.

As shown in FIG. 1, the vacuum vapor deposition apparatus 1 accommodates the above-described vacuum vapor deposition evaporation source comprising a heat transfer cylinder 6 equipped with a raw material unit 4 in a vacuum vessel 2 having an exhaust device 3. The base material 8 held by the holding plate 7 is disposed to face the side where the ampule 5 of the raw material unit is opened. In the figure, 9 is a valve of the vacuum vessel 2.
Two or more vacuum evaporation evaporation sources may be provided in the vacuum vessel 2. In this case, the base material is arranged facing the side where the ampule of each raw material unit is opened.

The substrate on which the thin film is formed is not particularly limited, and can include all substances such as metals, inorganic oxides, and organic compounds. Examples thereof include quartz or glass material, nickel or alloy material thereof, aluminum or alloy material thereof, magnesium or alloy material thereof, iron or iron alloy material, resin, natural rubber or synthetic rubber. Of these, metals, quartz, and glass materials are particularly preferred because of their excellent adhesion to the substrate. In the case of a base material such as resin and rubber, it can be suitably used by further inserting an adhesion layer between the thin film.
A thin film is formed on the surface of the base material by heating and evaporating the thin film material in a vacuum in the above vacuum vapor deposition apparatus, and solidifying and solidifying the base material surface.

A method for forming a fluorine-containing thin film on a substrate using the vacuum deposition apparatus will be described.
(1) Degreasing cleaning of coated substrate: The coated substrate is washed in advance. The cleaning is performed with an organic solvent such as acetone, brush cleaning with isopropyl alcohol (IPA), or other ultrasonic cleaning according to the type of substrate.
(2) Setting of target and coating substrate: The tip 5a of the ampoule 5 of the raw material unit 4 in which the thin film raw material and the bumping suppression member are accommodated is opened and attached to the heat transfer cylinder 6. Further, the substrate 8 is mounted on the holding plate 7.
(3) Exhaust of vacuum deposition equipment: Evacuate until the internal pressure of the equipment reaches 10 ^-2 to 10 ^-4 Pa. The internal pressure of the apparatus is preferably 5 × 10 ⁻³ Pa or less.

(4) Formation of fluorine-containing thin film: Heat transfer tube 6 is heated, and the temperature of the thin film raw material is heated from room temperature to 500 ° C. at a rate of temperature increase of about 10 ° C./min. A fluorine-containing thin film is formed thereon.
(5) Post-treatment after film formation: After depositing the thin film, it is desirable to heat-treat at about 50 ° C. for about 1 hour in order to improve the strength and adhesion of the thin film.

In the film forming method using the vacuum vapor deposition apparatus of the present invention, the thickness of the thin film is controlled by the weight of the thin film raw material stored in the ampoule.
The practical range for the thin film is 50 to 1000 nm, and preferably 10 to 50 nm. Further, the formed fluorine-containing thin film can have a water contact angle of more than 90 °, and has sufficient water repellency as a precision mold.

Example 1 and Example 2
A precision mold (SUS304) as a base material and Cytop (Asahi Glass Co., Ltd.) as a fluorine-containing compound are prepared, and a fluorine-containing thin film is formed by the following method using the vacuum deposition apparatus described above. The material was manufactured.
The raw material Cytop, 0.020 g and graphite felt as a bumping suppression member, the ampoule tip of the raw material unit containing 0.030 g is folded and attached to the heat transfer cylinder in the vacuum evaporation system, and the base material is Set on a holding plate 200 mm away from the ampoule opening, evacuate the vacuum vessel to 5 × 10 ^-3 Pa or less, and heat the heating device of the heat transfer tube from room temperature to 500 ° C at a rate of 10 ° C / 1 min. And heated.
In addition, the raw material unit used was sealed with nitrogen gas and stored for 1 month at room temperature (Example 1), and stored for 6 months at room temperature (Example 2).
After film formation, the film was heat-treated at 50 ° C. for 1 hour and left in the atmosphere at room temperature for 12 hours.
Here, the film thickness was measured with an ellipsometer. In addition, the contact angle with respect to various liquids was measured by a droplet method under the conditions of a droplet volume of 1 ± 0.2 mm ³ and room temperature. The liquid used for the measurement is water (72.8 mN / m), glycerin (63.4 mN / m), diiodomethane (50.8 mN / m) and n-hexadecane (27.5 mN / m).

Comparative Example 1
The CYTOP used as a raw material was deposited under the same conditions as in Example 1 except that the CYTOP used as a raw material was not stored in an ampoule of the raw material unit and was left to stand for 1 month in a room temperature air atmosphere. A part of the thin film raw material remained as a solid in the ampoule without evaporating.
After the film formation, heat treatment was performed at 50 ° C. for 1 hour, and the film was left in the air at room temperature for 12 hours.

表１からわかるように、大気雰囲気に１ヶ月放置した薄膜原料では、十分な膜厚が得られず、また目的とする撥水性が得られない。これに対し、アンプル中に不活性ガスとともに封止した原料ユニットでは、１２ヶ月保管後も安定した膜厚および優れた接触角を有する薄膜を形成できることがわかった。 The measurement results of Example 1, Example 2, and Comparative Example 1 are shown in Table 1.

As can be seen from Table 1, a thin film material left in an air atmosphere for one month cannot obtain a sufficient film thickness and cannot achieve the desired water repellency. On the other hand, it was found that a raw material unit sealed with an inert gas in an ampoule can form a thin film having a stable film thickness and an excellent contact angle even after storage for 12 months.

Example 3
A Si wafer having a diameter of 100 mm was prepared as a substrate, and Cytop was prepared as a fluorine-containing compound, and a substrate having a fluorine-containing thin film was produced by the following method using the above-described vacuum deposition apparatus.
Cytop used as a raw material, graphite felt as a bump suppression member, graphite felt, and the ampule tip of a raw material unit containing 0.03 g was folded and attached to a heat transfer cylinder in a vacuum evaporation system, and the base material was Set on a holding plate 200 mm away from the ampoule opening, evacuate the vacuum vessel to 5 × 10 ^-3 Pa or less, and heat the heating device of the heat transfer tube from room temperature to 500 ° C at a rate of 10 ° C / 1 min. And heated.
The ampule of the raw material unit used was an ampule whose internal volume was 5 times that of the raw material and the ratio of the opening diameter to the depth was 0.5.

Example 4
A substrate having a fluorine-containing thin film was produced under the same conditions as in Example 3 except that steel wool was used instead of graphite felt as the bumping suppression member.

Example 5
A substrate having a fluorine-containing thin film was produced under the same conditions as in Example 3 except that the ampoule internal volume was twice that of the raw material.

Example 6
A substrate having a fluorine-containing thin film was produced under the same conditions as in Example 3 except that the ratio of the ampule opening diameter to the depth was 1.

Comparative Example 2
The fluorine-containing thin film was formed under the same conditions as in Example 3 except that no graphite felt was used as the bumping suppression member, the ampule internal volume was twice that of the thin film raw material, and the ratio of the opening diameter to the depth was 1. The base material which has was produced.

The base materials having the fluorine-containing thin films prepared in Examples 3 to 6 and Comparative Example 2 were observed with a microscope, and the number of droplets deposited as a result of bumping was counted.
Table 2 shows the adhesion density of droplets per 1 cm ² .

  As shown in Table 2, by placing graphite felt in the ampoule together with the thin film material, making the ampoule internal volume 5 times or more that of the thin film material, and setting the ratio of the opening diameter to the depth to 0.5 or less. It was found that the adhesion density of the droplets was significantly reduced.

Example 7
Cytop as raw material, 0.020 g and graphite felt as a bumping suppression member, 0.030 g are placed in a pyrex (registered trademark) ampoule, attached to a heat transfer cylinder in a vacuum evaporation system, and the inside of the vacuum vessel is 5 × 10 ^The fluorine-containing organic thin film was formed by evacuating to ⁻³ Pa or less and heating the heat transfer cylinder heating device from room temperature to 500 ° C. at a rate of temperature increase of 10 ° C./1 min.
Here, a graphite heat transfer cylinder was used.

Comparative Example 3
A fluorine-containing organic thin film was formed under the same conditions as in Example 7 except that a copper alloy heat transfer cylinder was used.

  In Comparative Example 3, the ampule and the heat transfer cylinder were fused after film formation, and the heat transfer cylinder could not be used repeatedly. On the other hand, in Example 7, no fusion occurred, and the heat transfer cylinder could be used repeatedly.

  The raw material unit for vacuum deposition, the evaporation source for vacuum deposition, and the vacuum deposition apparatus of the present invention can form a film having a film thickness on the order of several tens of nm to several hundreds of nm on a base material of any material. It can be suitably used for mold release treatment, water repellent treatment for precision members, and the like.

It is a figure which shows a vacuum evaporation system. It is sectional drawing explaining the raw material unit for vacuum evaporation.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum evaporation apparatus 2 Vacuum container 3 Exhaust apparatus 4 Raw material unit 5 Ampoule 6 Heat transfer cylinder 7 Holding plate 8 Base material 9 Valve 10 Heating device 11 Thin film raw material 12 Crash boiling suppression member

Claims (7)

A vacuum vapor deposition raw material unit having a substantially cylindrical ampoule shape containing a thin film raw material used in a vacuum vapor deposition apparatus or a vacuum vapor deposition method for evaporating a thin film raw material to form a thin film on a substrate surface,
Along with the thin film raw material used in one batch process, a bumping suppression member that suppresses bumping when the thin film raw material evaporates is housed and hermetically sealed together with inert gas or dry air. Raw material unit for vacuum deposition.   2. The raw material unit for vacuum evaporation according to claim 1, wherein the bumping suppression member is made of a material having a higher thermal conductivity than the thin film raw material.   The substantially cylindrical ampoule shape has an internal volume of 5 times or more of the amount of the thin film raw material used in one batch process, and the ratio of the opening diameter when the ampoule tip is cut off and the depth of the ampoule barrel is 3. The raw material unit for vacuum vapor deposition according to claim 1, wherein the raw material unit is not more than 0.5.   4. The vacuum vapor deposition raw material unit according to claim 3, wherein the substantially cylindrical ampoule shape is made of glass. An evaporation source for vacuum vapor deposition installed in a vacuum vapor deposition apparatus that evaporates thin film raw material to form a thin film on a substrate surface,
The evaporation source for vacuum vapor deposition includes a raw material unit for vacuum vapor deposition according to any one of claims 1 to 4, a heat transfer cylinder for transferring heat to the periphery of the raw material unit, and heating the heat transfer cylinder. An evaporation source for vacuum evaporation, comprising:   6. The evaporation source for vacuum evaporation according to claim 5, wherein at least a portion of the heat transfer cylinder that contacts the raw material unit is made of a material mainly composed of graphite. A vacuum evaporation apparatus in which an evaporation source for vacuum evaporation is installed in an apparatus for forming a thin film on a substrate surface by evaporating a thin film material,
The vacuum deposition apparatus according to claim 5, wherein the thin film material is an organic substance, and the evaporation source for vacuum deposition is the evaporation source for vacuum deposition according to claim 5 or 6.

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