JP2007314881A - Vapor deposition device for thin film formation - Google Patents

Vapor deposition device for thin film formation Download PDF

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JP2007314881A
JP2007314881A JP2007138101A JP2007138101A JP2007314881A JP 2007314881 A JP2007314881 A JP 2007314881A JP 2007138101 A JP2007138101 A JP 2007138101A JP 2007138101 A JP2007138101 A JP 2007138101A JP 2007314881 A JP2007314881 A JP 2007314881A
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vapor deposition
deposition material
thin film
opening
feed pipe
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Kyung Bin Bae
キョン−ビン ペー
Ju Seob Yoon
ジュ−ソプ ユン
Chang Woo Kim
チャン−ウー キム
Hyun Goo Kwon
ヒョン−ゴー クォン
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ANS Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition device for thin film formation where, in the case the feed of a vapor deposition material is needless, it is cut-off, thus the using efficiency of the vapor deposition material can be maximized. <P>SOLUTION: The vapor deposition system 1 for thin film formation comprises: an evaporation source 20 of heating and evaporating a vapor deposition material; a feed tube 30 of transferring the vapor deposition material of a vapor phase fed from the evaporation source; an opening/closing means of opening/closing the feed tube; and an jetting means connected to the feed tube and jetting the vapor deposition material toward a substrate. By the progress of the process, the feed of the vapor deposition material can be controlled. Namely, in the case the feed of the vapor deposition material is needless, it is cut-off, thus the using efficiency of the vapor deposition material can be maximized. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、薄膜形成用蒸着装置に関し、より詳しくは、蒸着材料の供給が不要な場合、それを遮断することによって、蒸着材料の使用効率を極大化することができる薄膜形成用蒸着装置に関する。   The present invention relates to a vapor deposition apparatus for forming a thin film, and more particularly to a vapor deposition apparatus for forming a thin film that can maximize the use efficiency of the vapor deposition material by blocking the supply of the vapor deposition material when it is unnecessary.

最近、情報通信技術の飛躍的な発展と市場の膨張によって、ディスプレイ素子として平板表示素子(フラット パネル ディスプレイ)が脚光を浴びている。このような平板表示素子としては、液晶表示素子、プラズマディスプレイ素子、有機発光素子などが代表的なものである。   Recently, flat display devices (flat panel displays) have been in the spotlight as display devices due to the dramatic development of information communication technology and the expansion of the market. Typical examples of such flat panel display elements include liquid crystal display elements, plasma display elements, and organic light emitting elements.

中でも、有機発光素子は、早い応答速度、従来の液晶表示素子より低い消費電力、軽量性、別途のバックライト装置の不要で超薄型で作られる点、高輝度などの特長から次世代ディスプレイ素子として脚光を浴びている。   Among them, organic light-emitting elements are next-generation display elements due to features such as high response speed, lower power consumption than conventional liquid crystal display elements, light weight, no need for a separate backlight device, and ultra-thinness. As the spotlight.

このような有機発光素子は、基板の上に、陽極膜、有機薄膜、陰極膜を順に成膜し、陽極と陰極との間に電圧をかけることによって、適宜なエネルギーの差が有機薄膜に形成され、自ら発光する原理である。即ち、注入される電子と正孔(ｈｏｌｅ)の再結合によって生じた励起エネルギーが光として発生するのである。この時、有機物質のドーパントの量によって、発生する光の波長が調節できるため、フルカラーの具現が可能である。   In such an organic light emitting device, an anode film, an organic thin film, and a cathode film are sequentially formed on a substrate, and an appropriate energy difference is formed in the organic thin film by applying a voltage between the anode and the cathode. It is a principle that emits light by itself. That is, excitation energy generated by recombination of injected electrons and holes is generated as light. At this time, since the wavelength of the generated light can be adjusted according to the amount of the dopant of the organic material, a full color can be realized.

有機発光素子の詳しい構造は、示していないが、基板上に、陽極、正孔（ホール）注入層、正孔転送層(ｈｏｌｅ ｔｒａｎｓｆｅｒ ｌａｙｅｒ)、発光層、電子転送層(ｅｌｅｔｒｏｎ ｔｒａｎｓｆｅｒ ｌａｙｅｒ)、電子注入層、陰極が順に積層されて形成される。ここで、陽極としては、面抵抗が小さく、透過性が良いＩＴＯ(Ｉｎｄｉｕｍ Ｔｉｎ Ｏｘｉｄｅ)が主として使用される。そして、有機薄膜は、発光効率を高めるために、正孔注入層、正孔運送層、発光層、電子運送層、電子注入層の多層で構成され、発光層として使用される有機物質は、Ａｌｑ３、ＴＰＤ、ＰＢＤ、ｍ−ＭＴＤＡＴＡ、ＴＣＴＡなどである。また、陰極としては、ＬｉＦ−Ａｌ金属膜が使用される。そして、有機薄膜は、空気中の水分と酸素に非常に弱いため、素子の寿命(ｌｉｆｅ ｔｉｍｅ)を増加させるためのキャップが封止される。 Although a detailed structure of the organic light emitting device is not shown, an anode, a hole injection layer, a hole transfer layer, a light emitting layer, an electron transfer layer, an electron are not shown on the substrate. An injection layer and a cathode are laminated in order. Here, as the anode, ITO (Indium Tin Oxide) having a small surface resistance and good permeability is mainly used. The organic thin film is composed of a multilayer of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order to increase luminous efficiency. The organic material used as the light emitting layer is Alq. 3 , TPD, PBD, m-MTDATA, TCTA, and the like. In addition, a LiF—Al metal film is used as the cathode. Since the organic thin film is very sensitive to moisture and oxygen in the air, a cap for increasing the lifetime of the device is sealed.

従って、有機発光素子を製造するためには、多様な蒸着膜を形成しなければならないが、このような蒸着膜を形成するための従来の方法では、ポイント蒸着、ライン蒸着、有機気相蒸着(ＯＶＰＤ)、及びデジタル・スキャン・プロセッサー(ＤＳＰ)などがある。   Accordingly, in order to manufacture an organic light emitting device, various deposition films must be formed. Conventional methods for forming such deposition films include point deposition, line deposition, and organic vapor deposition ( OVPD) and digital scan processor (DSP).

図１を参照して、従来のＤＳＰ方式による蒸着装置の構成を説明すると、蒸着材料を加熱して蒸発させる蒸発源１２０と、前記蒸発源１２０から蒸発された蒸着材料を移送する送り管１３０と、前記送り管１３０を通して供給された気相の蒸発材料を基板Ｓに向けて噴射する複数のノズルが備えられた噴射手段１４０とを含んでなる。   Referring to FIG. 1, the configuration of a conventional DSP vapor deposition apparatus will be described. An evaporation source 120 for heating and evaporating a vapor deposition material, and a feed pipe 130 for transferring the vapor deposition material evaporated from the evaporation source 120; , And jetting means 140 provided with a plurality of nozzles for jetting the vapor-phase evaporation material supplied through the feed pipe 130 toward the substrate S.

前記のように構成された従来の蒸着装置１００は、真空チャンバ内に基板Ｓをローディングし、ローディングされた基板とマスクＭを整列して定位置に密着させた後、蒸発源１２０を加熱し、蒸着材料を基板Ｓに向けて噴射することによって、薄膜を形成する。   The conventional vapor deposition apparatus 100 configured as described above loads the substrate S in the vacuum chamber, aligns the loaded substrate and the mask M and adheres them in place, and then heats the evaporation source 120. By spraying the vapor deposition material toward the substrate S, a thin film is formed.

一方、基板のローディング時、または基板とマスクの整列時などには、蒸着材料が噴射されてはならない。このため、従来では、回動可能なシャッター１５０を利用している。即ち、工程の準備時には、基板Ｓと噴射手段１４０との間にシャッター１５０を介在させることで、基板に蒸着材料が蒸着されることを防止し、工程時には、前記シャッター１５０を回動させて開放することで、基板に蒸着材料を蒸着する。   On the other hand, the vapor deposition material must not be sprayed when loading the substrate or aligning the substrate and the mask. For this reason, conventionally, a rotatable shutter 150 is used. That is, when preparing the process, the shutter 150 is interposed between the substrate S and the ejecting means 140 to prevent the deposition material from being deposited on the substrate. During the process, the shutter 150 is rotated to be opened. As a result, a deposition material is deposited on the substrate.

ところが、有機発光素子の製造に利用される有機物などの蒸着材料の殆どは、非常に高価なものである。従って、シャッターによる方式は、噴射される蒸着材料を遮断して基板への蒸着を防ぐだけで、それを再活用することができないため、蒸着材料の無駄使いになるという問題点がある。   However, most of the vapor deposition materials such as organic substances used for manufacturing the organic light emitting device are very expensive. Therefore, the method using the shutter has a problem that the vapor deposition material is wasted because it cannot be reused simply by blocking the vapor deposition material to be sprayed to prevent vapor deposition on the substrate.

本発明は、上述した問題点を解決するために案出したものであって、本発明の目的は、蒸着材料の供給が不要な場合、これを遮断することによって、蒸着材料の使用効率を極大化することができる薄膜形成用蒸着装置を提供することにある。   The present invention has been devised in order to solve the above-described problems. The object of the present invention is to maximize the use efficiency of the vapor deposition material by blocking the supply of the vapor deposition material when it is unnecessary. An object of the present invention is to provide a vapor deposition apparatus for forming a thin film that can be converted into a thin film.

前記のような技術的課題を解決するために、本発明による薄膜形成用蒸着装置は、蒸着材料を加熱して蒸発させる蒸発源と、前記蒸発源から供給された気相の蒸着材料を移送する送り管と、前記送り管を開閉する開閉手段と、前記送り管に連結され、前記蒸着材料を基板に向けて噴射する噴射手段と、を含んでなる。   In order to solve the above technical problems, a thin film forming vapor deposition apparatus according to the present invention transfers an evaporation source that evaporates by heating the vapor deposition material, and a vapor deposition material supplied from the evaporation source. A feed pipe; opening and closing means for opening and closing the feed pipe; and injection means connected to the feed pipe and jetting the vapor deposition material toward the substrate.

前記開閉手段は、様々な形で製作されることができ、特に、空圧により伸縮可能なベローズと、前記ベローズの伸縮により前記送り管を開閉する金属口とを含んでなることが望ましい。   The opening / closing means can be manufactured in various forms, and in particular, preferably includes a bellows that can be expanded and contracted by pneumatic pressure and a metal port that opens and closes the feed pipe by expansion and contraction of the bellows.

また、前記送り管から分岐され、前記開閉手段により前記送り管の閉鎖時、蒸着材料を誘導するバイパスラインと、前記バイパスラインにより誘導される前記蒸着材料を貯蔵する貯蔵タンクがさらに備えられることがより望ましい。   Further, a bypass line branched from the feed pipe and guiding the vapor deposition material when the feed pipe is closed by the opening / closing means, and a storage tank for storing the vapor deposition material guided by the bypass line may be further provided. More desirable.

なお、前記開閉手段を加熱するヒーターがさらに備えられることが望ましい。   It is desirable that a heater for heating the opening / closing means is further provided.

また、前記噴射手段と基板との間には、回動可能なシャッターがさらに備えられても良い。   Further, a rotatable shutter may be further provided between the ejection unit and the substrate.

本発明によると、工程の進行によって、蒸着材料の供給を制御することができる。   According to the present invention, the supply of the vapor deposition material can be controlled by the progress of the process.

従って、蒸着材料の供給が不要な場合、これを遮断することによって、蒸着材料の使用効率を極大化することができる。   Therefore, when the supply of the vapor deposition material is unnecessary, the use efficiency of the vapor deposition material can be maximized by blocking this.

以下、添付した図面を参照して、本発明の構成及び作用を具体的に説明する。   Hereinafter, the configuration and operation of the present invention will be described in detail with reference to the accompanying drawings.

図２を参照すると、本発明による蒸着装置１は、蒸発源２０、送り管３０、噴射手段８０、開閉手段４０、５０及びバイパスライン６０を含んでなる。   Referring to FIG. 2, the vapor deposition apparatus 1 according to the present invention includes an evaporation source 20, a feed pipe 30, injection means 80, opening / closing means 40 and 50, and a bypass line 60.

蒸発源２０は、内部に金属または有機物などの蒸着材料を収容し加熱することによって、蒸着材料を蒸発させる要素である。   The evaporation source 20 is an element that evaporates the vapor deposition material by accommodating and heating the vapor deposition material such as metal or organic matter inside.

送り管３０は、蒸発源２０から蒸発された気相の蒸着材料を後述する噴射手段８０に流入させる要素である。   The feed pipe 30 is an element that causes the vapor deposition material evaporated from the evaporation source 20 to flow into the injection unit 80 described later.

噴射手段８０は、送り管３０から流入された前記気相の蒸着材料を基板Ｓに向けて噴射する複数の噴射ノズルを含んで構成される。前記基板Ｓは、メタルマスクＭを整列して定位置に密着されている。また、噴射手段８０と基板Ｓとの間には、シャッター９０が備えられる。シャッター９０は、回動可能に構成され、工程の準備時には、基板Ｓと噴射ヘッド８０との間にシャッター９０を介在させることで、基板Ｓに蒸着材料が蒸着されることを防止し、工程時には、シャッター９０を回動させて開放することで、基板Ｓに蒸着材料を蒸着する。また、示していないが、噴射ヘッド８０の温度を制御するための熱電対がさらに備えられる。   The injection unit 80 includes a plurality of injection nozzles that inject the vapor deposition material flowing in from the feed pipe 30 toward the substrate S. The substrate S is in close contact with the metal mask M in place. Further, a shutter 90 is provided between the ejection unit 80 and the substrate S. The shutter 90 is configured to be rotatable, and when the process is prepared, the shutter 90 is interposed between the substrate S and the ejection head 80 to prevent the deposition material from being deposited on the substrate S. The deposition material is deposited on the substrate S by rotating and opening the shutter 90. Although not shown, a thermocouple for controlling the temperature of the ejection head 80 is further provided.

また、蒸着源２０の上圧速度を制御するために、質量流量制御器(Ｍａｓｓ Ｆｌｏｗ Ｃｏｎｔｒｏｌｌｅｒ、ＭＦＣ)１０が備えられるが、この時、希釈ガスが使用される。即ち、前記希釈ガスは、質量流量制御器１０により供給量が制御され、供給ラインを通して注入される。   In addition, a mass flow controller (MFC) 10 is provided to control the upper pressure speed of the vapor deposition source 20, and a dilution gas is used at this time. That is, the supply amount of the dilution gas is controlled by the mass flow controller 10 and injected through the supply line.

特に、本発明による蒸着装置１は、送り管３０を開閉する開閉手段４０がさらに備えられている。開閉手段４０により送り管３０を開閉することによって、蒸発源２０から蒸発された前記蒸着材料の噴射手段８０への供給を制御することができる。   In particular, the vapor deposition apparatus 1 according to the present invention further includes opening / closing means 40 for opening / closing the feed pipe 30. By opening / closing the feed pipe 30 by the opening / closing means 40, the supply of the vapor deposition material evaporated from the evaporation source 20 to the injection means 80 can be controlled.

一方、開閉手段４０によって送り管３０が閉鎖される時、前記蒸着材料を誘導するバイパスライン６０が、送り管３０から分岐されて形成される。   On the other hand, when the feed pipe 30 is closed by the opening / closing means 40, a bypass line 60 for guiding the vapor deposition material is formed to be branched from the feed pipe 30.

また、バイパスライン６０上にも、開閉手段５０がさらに備えられる。   An opening / closing means 50 is further provided on the bypass line 60.

また、バイパスライン６０を通して誘導される蒸着材料を貯蔵し再活用するために、貯蔵タンク７０がさらに備えられている。   In addition, a storage tank 70 is further provided to store and reuse the vapor deposition material guided through the bypass line 60.

図３ａを参照して、本発明による開閉手段４０の構成を具体的に説明する。示しているように、開閉手段４０は、空圧によって伸縮可能なベローズ４１と、ベローズ４１に連結され、送り管３０を開閉する金属口４２とを含んでなる。勿論、金属口４２は、高温でも耐熱性を有する材質で形成される。   With reference to FIG. 3a, the structure of the opening / closing means 40 according to the present invention will be described in detail. As shown, the opening / closing means 40 includes a bellows 41 that can be expanded and contracted by pneumatic pressure, and a metal port 42 that is connected to the bellows 41 and opens and closes the feed pipe 30. Of course, the metal port 42 is formed of a material having heat resistance even at a high temperature.

図３ａ乃至図３ｂを参照して、開閉手段４０の作用を説明する。まず、図３ａのように、蒸発源から蒸発された気相の蒸着材料が、送り管３０を通して噴射手段に供給される。   The operation of the opening / closing means 40 will be described with reference to FIGS. 3a to 3b. First, as shown in FIG. 3 a, the vapor deposition material evaporated from the evaporation source is supplied to the injection means through the feed pipe 30.

次に、基板のローディングやマスクとの整列など、蒸着が行われない間には、図３ｂのように、ベローズ４１に閉鎖用空圧を加えてベローズ４１を伸ばし、その結果、ベローズ４１に連結されている金属口４２が、送り管３０を閉鎖させる。この状態では、示していないが、噴射手段への供給が遮断された気相の蒸着材料は、バイパスラインに誘導され、貯蔵タンクに貯蔵される。   Next, while deposition is not performed such as substrate loading or alignment with the mask, the bellows 41 is extended by applying a closing air pressure to the bellows 41 as shown in FIG. The metal port 42 being closed closes the feed tube 30. In this state, although not shown, the vapor deposition material that is not supplied to the injection means is guided to the bypass line and stored in the storage tank.

逆に、蒸着工程を行うためには、ベローズ４１に開放用空圧を加えてベローズ４１を圧縮させ、その結果、図３ａのように、金属口４２が送り管３０を開放させる。この時は、前記バイパスラインが閉鎖される。   On the contrary, in order to perform the vapor deposition step, the bellows 41 is compressed by applying an opening air pressure to the bellows 41, and as a result, the metal port 42 opens the feed tube 30 as shown in FIG. 3a. At this time, the bypass line is closed.

以下、本発明による蒸着装置の作用を説明する。まず、真空チャンバ(示せず)の内部に基板Ｓをローディングし、マスクＭを整列して定位置に密着させる。このような工程の準備中には、開閉手段４０を用いて送り管３０を閉鎖することによって、蒸着材料が噴射手段８０に供給されることを遮断する。   Hereinafter, the operation of the vapor deposition apparatus according to the present invention will be described. First, the substrate S is loaded inside a vacuum chamber (not shown), and the mask M is aligned and brought into close contact with a fixed position. During the preparation of such a process, the supply pipe 30 is closed using the opening / closing means 40 to block the vapor deposition material from being supplied to the injection means 80.

前記の準備段階が完了すると、シャッター９０を回動させて開放し、開閉手段４０を用いて送り管３０を開放することによって、蒸着材料を噴射手段８０に供給し、噴射手段８０は、基板Ｓに向けて蒸着材料を噴射して蒸着する。   When the preparation step is completed, the shutter 90 is rotated and opened, and the feed tube 30 is opened using the opening / closing means 40 to supply the vapor deposition material to the injection means 80. The vapor deposition material is jetted toward the vapor deposition.

同様に、蒸着工程が完了する、または新しい蒸着工程を行うために準備する段階では、送り管３０を閉鎖する。   Similarly, the feed tube 30 is closed when the deposition process is completed or ready for a new deposition process.

従来の薄膜形成用蒸着装置の構造を示す図である。It is a figure which shows the structure of the conventional vapor deposition apparatus for thin film formation. 本発明による蒸着装置の構造を示す図である。It is a figure which shows the structure of the vapor deposition apparatus by this invention. 図２に示されている蒸着装置の要部使用状態図である。It is a principal part use state figure of the vapor deposition apparatus shown by FIG. 図２に示されている蒸着装置の要部使用状態図である。It is a principal part use state figure of the vapor deposition apparatus shown by FIG.

符号の説明Explanation of symbols

１ 蒸着装置
１０ 質量流量制御器
２０ 蒸発源
３０ 送り管
４０、５０ バルブ
４１ ベローズ
４２ 金属口
６０ バイパスライン
７０ 貯蔵タンク
８０ 噴射ヘッド
９０ シャッター DESCRIPTION OF SYMBOLS 1 Vapor deposition apparatus 10 Mass flow controller 20 Evaporation source 30 Feed pipe 40, 50 Valve 41 Bellows 42 Metal port 60 Bypass line 70 Storage tank 80 Injection head 90 Shutter

Claims (6)

蒸着材料を加熱して蒸発させる蒸発源と、
前記蒸発源から供給された気相の蒸着材料を移送する送り管と、
前記送り管を開閉する開閉手段と、
前記送り管に連結され、前記蒸着材料を基板に向けて噴射する噴射手段とを含んでなることを特徴とする薄膜形成用蒸着装置。 An evaporation source for heating and evaporating the vapor deposition material;
A feed pipe for transferring the vapor deposition material supplied from the evaporation source;
Opening and closing means for opening and closing the feed tube;
A vapor deposition apparatus for forming a thin film, characterized by comprising spraying means connected to the feed pipe and spraying the vapor deposition material toward the substrate. 前記開閉手段は、
空圧により伸縮可能なベローズと、
前記ベローズの伸縮により前記送り管を開閉する金属口とを含んでなることを特徴とする請求項１に記載の薄膜形成用蒸着装置。 The opening / closing means includes
Bellows that can be expanded and contracted by air pressure,
2. The vapor deposition apparatus for forming a thin film according to claim 1, further comprising a metal port that opens and closes the feed pipe by expansion and contraction of the bellows. 前記送り管から分岐され、前記開閉手段により前記送り管の閉鎖時、蒸着材料を誘導するバイパスラインがさらに備えられることを特徴とする請求項１に記載の薄膜形成用蒸着装置。   2. The vapor deposition apparatus for forming a thin film according to claim 1, further comprising a bypass line branched from the feed pipe and guiding a vapor deposition material when the feed pipe is closed by the opening / closing means. 前記バイパスラインにより誘導される前記蒸着材料を貯蔵する貯蔵タンクがさらに備えられることを特徴とする請求項３に記載の薄膜形成用蒸着装置。   The deposition apparatus for forming a thin film according to claim 3, further comprising a storage tank that stores the deposition material induced by the bypass line. 前記開閉手段を加熱するヒーターがさらに備えられることを特徴とする請求項２に記載の薄膜形成用蒸着装置。   The vapor deposition apparatus for forming a thin film according to claim 2, further comprising a heater for heating the opening / closing means. 前記噴射手段と基板との間には、回動可能なシャッターがさらに備えられることを特徴とする請求項１に記載の薄膜形成用蒸着装置。   The thin film forming vapor deposition apparatus according to claim 1, further comprising a rotatable shutter between the spray unit and the substrate.
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