JP2007311689A - Semiconductor ultrasonic joining method and device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor ultrasonic joining method and a semiconductor ultrasonic joining device for preventing damage, chipping, or the like from occurring in a semiconductor device, even if using a low-permittivity material for a wafer or thinning the wafer. <P>SOLUTION: The back of a wafer that is divided into individual semiconductor elements 2 while a metal bump 2c is formed on the electrode 2a on the surface of each semiconductor element 2, and a wafer sheet 4 in a wafer sheet holding body 1, hold the wafer adhered with a thermally peelable layer 3 in the wafer sheet holding body 1. At the same time, a bump 2c of one semiconductor element 2 opposes the electrode of an electronic substrate for positioning. While the bump 2c of the semiconductor element 2 is in contact with the electrode of the electronic substrate, ultrasonic waves are applied while the semiconductor element 2 and the electronic substrate are heated. The bump 2c of the semiconductor element 2 is joined to the electrode of the electronic substrate with the ultrasonic waves for weakening the adhesive strength of the thermally peelable layer 3 by heating. As a result, the semiconductor element 2 joined to the electronic substrate is separated from the wafer sheet. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor ultrasonic bonding method and apparatus for ultrasonic bonding an electronic substrate with an electrode and a semiconductor element with an electrode and a metal bump.

  Conventionally, as this type of semiconductor ultrasonic bonding apparatus, for example, an apparatus of Conventional Example 1 as shown in FIGS. 15 and 16 is known (see, for example, Patent Document 1 and Patent Document 2). That is, in the semiconductor ultrasonic bonding apparatus of Conventional Example 1, as shown in FIG. 15, the adhesive sheet 113 is fixed to the wafer ring 114 in a state of being stretched so as to close the upper opening of the ring-shaped wafer ring 114. Has been. On the upper surface of the adhesive sheet 113, a wafer is diced and divided into a plurality of parts, and a plurality of semiconductor elements 115 having a plurality of bumps 115a on the circuit forming surface 115b on the upper surface are temporarily fixed by an adhesive material. ing.

  The semiconductor element 115 is moved upward via the adhesive sheet 113 when the protruding needle 135b of the protruding needle up / down moving part 130 disposed below the wafer ring 114 is raised from within the cylindrical protruding needle holder 132. It is pushed up and peeled off from the adhesive sheet 113 and picked up by suction to the supply head 141 disposed above the wafer ring 114. The semiconductor element 115 picked up by the supply head 141 is transferred to the 180 ° reversing head 140 disposed on the side of the wafer ring 114 with the plurality of bumps 115a facing upward, and is sucked and held. The semiconductor element 115 sucked and held by the 180 ° reversing head 140 is turned 180 ° by the reversing mechanism 142 integrally connected to the 180 ° reversing head 140 while being sucked and held, and is disposed below the reversing head 140. After the positioning stage 143 and the plurality of bumps 115a are moved to a position where they face each other, the suction holding state is released and transferred to the positioning stage 143. The semiconductor element 115 delivered on the positioning stage 143 is positioned in the XYθ direction by a positioning claw 144 slidably provided on the positioning stage 143, and then the upper part is vacuumed as shown in FIG. The pickup is picked up by the mounting head 151 connected to the vacuum pump 157 via the hose 156. Then, the semiconductor element 115 picked up by the mount head 151 by suction is set in advance on the upper surface of the mount stage 150, and placed on an attachment 152 to which a sealing resin 116 is applied in advance on the upper surface.

  As shown in FIG. 16, the semiconductor element 115 placed on the attachment object 152 is in contact with the attachment object 152 via the sealing resin 116 and is connected to the upper part of the mount head 151. The pressure generated by the pressurizing mechanism 154 is transmitted via the 153 and the ultrasonic wave oscillated by the ultrasonic oscillator 155 is transmitted, so that the object 152 is ultrasonically bonded.

  However, in the semiconductor ultrasonic bonding apparatus of Conventional Example 1, since the delivery process until the semiconductor element 115 is peeled off from the adhesive sheet 113 and placed on the attachment 152 is complicated, the semiconductor element 115 and the bump 115a. May be damaged, and it takes time until the semiconductor element 115 is supplied to the attachment 152, and the semiconductor element 115 may be dropped during the delivery process.

  A technique for solving the problems of the semiconductor ultrasonic bonding apparatus according to Conventional Example 1 as described above (hereinafter referred to as Conventional Example 2) is disclosed in Patent Document 3, for example. FIG. 17 is a schematic diagram for explaining the operation of the semiconductor ultrasonic bonding apparatus of Conventional Example 2. The operation until the semiconductor element 115 is placed on the workpiece 152 and is ultrasonically bonded is the same as that of the semiconductor ultrasonic bonding apparatus of Conventional Example 1, and the same apparatus as that of Conventional Example 1 is the same. The code | symbol is attached | subjected.

  In the semiconductor ultrasonic bonding apparatus of Conventional Example 2, as shown in FIG. 17, the wafer ring 114 that holds the semiconductor element 115 so that the circuit forming surface 115b and the plurality of bumps 115a face downward is reversed from that of Conventional Example 1. Is positioned.

  In the semiconductor element 115, the downward needle up / down moving mechanism 110 disposed above the wafer ring 114 brings the sealing plate 112 into contact with the upper surface of the wafer ring 114 so as to close the upper opening of the wafer ring 114 in FIG. 17. By lowering the abutting needle 111 while being vacuumed, the semiconductor element 115 is peeled down from the adhesive sheet 113 by being pushed downward through the adhesive sheet 113, and the circuit forming surface 115b and the plurality of bumps 115a are directed downward. In this state, the semiconductor element 115 is transferred onto the positioning stage 120. The semiconductor element 115 delivered on the positioning stage 120 can be moved in the XYθ moving mechanism 122 by the XYθ moving mechanism 122 provided at the lower part of the positioning stage 120 and then moved in the left-right direction in FIG. Is moved to a position where it can be picked up by the mount head 151 and picked up by the mount head 151 by suction. The semiconductor element 115 picked up by the mount head 151 by suction is set in advance on the upper surface of the mount stage 150 by the mount head 151, and is placed on an object 152 to which a sealing resin 116 is previously applied. 16).

  As shown in FIG. 16, the semiconductor element 115 placed on the attachment object 152 is in contact with the attachment object 152 via the sealing resin 116 and is connected to the upper part of the mount head 151. The pressure generated by the pressurizing mechanism 154 is transmitted via the 153 and the ultrasonic wave oscillated by the ultrasonic oscillator 155 is transmitted, so that the object 152 is ultrasonically bonded.

  Since the semiconductor ultrasonic bonding apparatus of Conventional Example 2 is configured as described above, the process of turning the semiconductor element 115 by 180 ° is eliminated and the delivery process is simplified, so that the semiconductor element 115, the bump 115a, etc. It is possible to suppress damage, to shorten the time until the semiconductor element 115 is supplied to the attachment 152, and to prevent the semiconductor element 115 from dropping during the delivery process.

JP-A-8-130230 Japanese Patent Laid-Open No. 11-288975 JP-A-11-45906

  In recent years, the thickness of a wafer constituting a semiconductor element tends to be thin, and the thickness of the wafer has been reduced to 50 μm or less (for example, 30 μm), which was generally about 100 μm in the past. On the other hand, as a material used for a wafer, a low dielectric constant (Low-K) material having a brittle property has been used in order to miniaturize a semiconductor element without reducing the operation speed.

  As described above, when a low dielectric constant material is used for the wafer or the thickness of the wafer becomes thin, in the semiconductor ultrasonic bonding apparatus of the conventional example 2, for example, the projecting needle 111 is moved down to move the semiconductor element 115. The semiconductor element 115 is locally stressed when it is pushed down and peeled off from the adhesive sheet 113, and the semiconductor element 115 is damaged or chipped.

  Accordingly, an object of the present invention is to solve the above-described problems, and prevents the occurrence of breakage or chipping of semiconductor elements even when a low dielectric constant material is used for the wafer or the thickness of the wafer is reduced. An object of the present invention is to provide a semiconductor ultrasonic bonding method and apparatus.

According to the first aspect of the present invention, there is provided a semiconductor ultrasonic bonding method for ultrasonically bonding an electronic substrate with an electrode and a semiconductor element with an electrode and a metal bump,
The back surface of the wafer, which is divided into individual semiconductor elements and in which metal bumps are formed on the electrodes on the front surface of each semiconductor element, and the wafer sheet of the wafer sheet holder are bonded together by a heat release layer, and the wafer is bonded to the wafer sheet. In a state of being held by a holder, the bumps of one of the semiconductor elements of the wafer and the electrodes of the electronic substrate corresponding to the bumps of the one semiconductor element are positioned to face each other.
In a state where the wafer is held on the wafer sheet holder, the one semiconductor element and the electronic substrate are heated while contacting the bump of the one semiconductor element of the wafer and the electrode of the electronic substrate. While applying ultrasonic waves to ultrasonically bond the bumps of the one semiconductor element and the corresponding electrodes of the electronic substrate, the adhesive force of the thermal peeling layer is weakened by the heating. The semiconductor ultrasonic bonding method is characterized in that the one semiconductor element bonded to the electronic substrate is detached from the wafer sheet.

  According to the second aspect of the present invention, when the one semiconductor element and the electronic substrate are ultrasonically bonded, the electrode surface on which the electrode of the one semiconductor element is formed and the electrode of the electronic substrate are The semiconductor ultrasonic wave according to the first aspect, wherein the thermosetting layer disposed between the formed electrode surfaces is thermoset by the heating to bond the one semiconductor element and the electronic substrate. A bonding method is provided.

  According to the third aspect of the present invention, simultaneously with the ultrasonic bonding, by the heating, the thermal peeling layer composed of one of a thermal peeling sheet, a thermal peeling film or a thermal peeling adhesive. The semiconductor ultrasonic bonding method according to the first or second aspect, wherein the one semiconductor element bonded to the electronic substrate is detached from the wafer sheet by weakening an adhesive force.

According to the fourth aspect of the present invention, the electrode surface on which the electrode of the one semiconductor element is formed before positioning the electrode of the electronic substrate corresponding to the bump of the one semiconductor element to face each other. Apply a non-conductive paste to form a thermosetting layer,
After the positioning,
The semiconductor ultrasonic bonding method according to any one of the first to third aspects, wherein the thermosetting layer is thermally cured by the heating simultaneously with the ultrasonic bonding.

  According to a fifth aspect of the present invention, in the ultrasonic bonding, the semiconductor ultrasonic wave according to any one of the first to fourth aspects, wherein the heating is performed from a back surface side of the one semiconductor element. A bonding method is provided.

  According to a sixth aspect of the present invention, the semiconductor ultrasonic bonding method according to any one of the first to fifth aspects, wherein the heating is performed from the back side of the electronic substrate during the ultrasonic bonding. I will provide a.

  According to a seventh aspect of the present invention, in the ultrasonic bonding, any one of the first to sixth aspects is characterized in that the ultrasonic wave is applied from the back surface side of the semiconductor element toward the electronic substrate. The semiconductor ultrasonic bonding method described in 1. is provided.

  According to an eighth aspect of the present invention, in the ultrasonic bonding, any one of the first to sixth aspects is characterized in that the ultrasonic wave is applied from the back surface side of the electronic substrate toward the one semiconductor element. A semiconductor ultrasonic bonding method according to one aspect is provided.

  According to the ninth aspect of the present invention, when bonding the plurality of semiconductor elements to the electronic substrate, a semiconductor element held on the wafer sheet of the wafer sheet holder and not bonded to the electronic substrate; The semiconductor ultrasonic bonding method according to any one of the first to eighth aspects, wherein bonding is performed so that the semiconductor element already bonded to the electronic substrate does not have an interference relationship.

  According to a tenth aspect of the present invention, after the defective semiconductor element in the plurality of semiconductor elements is transported to a defective semiconductor element disposal position, the heating is performed on the thermal separation layer corresponding to the defective semiconductor element. The semiconductor ultrasonic bonding method according to any one of the first to ninth aspects, wherein the defective semiconductor element is detached from the wafer sheet.

  According to an eleventh aspect of the present invention, when the semiconductor element is ultrasonically bonded to the electronic substrate, only one semiconductor element is ultrasonically bonded to one electronic substrate. The semiconductor ultrasonic bonding method according to any one of 10 aspects is provided.

According to a twelfth aspect of the present invention, there is provided a semiconductor ultrasonic bonding apparatus for ultrasonically bonding an electronic substrate with an electrode and a semiconductor element with an electrode and a metal bump,
A wafer sheet, and a heat release layer for bonding the wafer sheet and the back surface of the wafer, which is divided into individual semiconductor elements and in which metal bumps are formed on the electrodes on the surface of each semiconductor element, A wafer sheet holder that can be adhered and held on the wafer sheet via the thermal release layer;
With the wafer held by the wafer sheet holder, the bumps of one of the semiconductor elements of the wafer sheet, and the electrodes of the electronic substrate corresponding to the bumps of the one semiconductor element, Are positioned so that the bumps of the one semiconductor element of the wafer are in contact with the electrodes of the electronic substrate, and the ultrasonic wave is heated while heating the one semiconductor element and the electronic substrate. And simultaneously applying ultrasonic bonding between the bumps of the one semiconductor element and the corresponding electrodes of the electronic substrate, the adhesive force of the thermal peeling layer is weakened by the heating, and applied to the electronic substrate. An ultrasonic bonding part for separating the bonded semiconductor element from the wafer sheet;
A semiconductor ultrasonic bonding apparatus is provided.

  According to a thirteenth aspect of the present invention, the wafer sheet holder is formed by electrode bonding the one semiconductor element and the electronic substrate on the wafer held by the wafer sheet holder by thermosetting by heating. The semiconductor ultrasonic bonding apparatus according to the twelfth aspect, wherein the wafer is bonded and held to the wafer sheet via the thermal release layer in a state where a thermosetting layer to be bonded in a state is disposed. To do.

According to a fourteenth aspect of the present invention, an electronic substrate recognition apparatus that recognizes a recognition target portion of the electronic substrate and outputs electronic substrate recognition data before performing the positioning by the ultrasonic bonding portion,
A semiconductor element recognition device for recognizing a recognition target portion of the one semiconductor element and outputting semiconductor element recognition data before joining the one semiconductor element and the electronic substrate;
Further comprising
The ultrasonic bonding part is
The electrode surface on which the electrode of the one semiconductor element of the wafer held on the wafer sheet holding body is disposed in a state of being opposed to the electrode surface on which the electrode of the electronic substrate is formed. A semiconductor element transport device that transports a wafer sheet holder and positions the one semiconductor element of the wafer held by the wafer sheet holder at a bonding position for semiconductor elements;
Opposite to the wafer sheet, which is transferred by the semiconductor element transfer device and bonded to the one semiconductor element of the wafer of the wafer sheet holding body located at the bonding position for the semiconductor element through the thermal release layer. And an ultrasonic bonding tool capable of applying the ultrasonic wave in contact with an ultrasonic wave application region of the wafer sheet corresponding to the back surface of the one semiconductor element;
Ultrasonic bonding for moving the ultrasonic bonding tool to be brought into contact with the ultrasonic wave application region of the wafer sheet of the wafer sheet holder, which is transferred by the semiconductor element transfer device and located at the bonding position for the semiconductor element. A tool moving device;
The one semiconductor that is positioned at the junction position for the semiconductor element, with the electrode of the electronic substrate before the bonding disposed so as to face the electrode surface of the one semiconductor element. An electronic substrate transport device for transporting to an electronic substrate bonding position facing the electrode surface of the element, and positioning the electrode of the electronic substrate on the bump of the one semiconductor element at the electronic substrate bonding position;
Contacting at least one of the ultrasonic wave application area of the wafer sheet of the wafer sheet holding member positioned at the bonding position for the semiconductor element or the electronic substrate before bonding positioned at the bonding position for the electronic substrate. A heating device capable of heating the thermal release layer corresponding to the one semiconductor element;
The semiconductor element transfer device, the ultrasonic bonding tool, the ultrasonic bonding tool moving device, the electronic substrate transfer device, the heating device, the electronic substrate recognition device, and the semiconductor element recognition device are connected to perform respective operations. By controlling, the wafer sheet holding body is transferred to the semiconductor element bonding position by the semiconductor element transfer apparatus, and the ultrasonic wave application of the wafer sheet of the wafer sheet holding body positioned at the semiconductor element bonding position is performed. The semiconductor element recognition data output by the semiconductor element recognition device by bringing the ultrasonic bonding tool into contact with the region and conveying the electronic substrate before bonding to the electronic substrate bonding position by the electronic substrate transfer device. And the electronic substrate recognition data output by the electronic substrate recognition device. The one semiconductor element and the electronic substrate are positioned by the semiconductor element transfer device and the electronic substrate transfer device so that the electrode of the electronic substrate is bonded to the bump of the first substrate. A controller that controls the ultrasonic bonding by applying the ultrasonic wave by the ultrasonic bonding tool while heating the substrate by the heating device;
The semiconductor ultrasonic bonding apparatus according to the eleventh or twelfth aspect is provided.

According to a fifteenth aspect of the present invention, the electronic substrate transport apparatus may include the one semiconductor element, the electronic substrate, and the electronic substrate by thermosetting by heating before bonding the electronic substrate to the electrode surface of the electronic substrate. According to the twelfth or fourteenth aspect, the electronic substrate before bonding is transported to the bonding position for the electronic substrate in a state where the thermosetting layer for bonding the electrode in the electrode bonding state is disposed on the electronic substrate. A semiconductor ultrasonic bonding apparatus is provided.
Here, the electrode bonded state refers to a state in which the electrode of the semiconductor element and the electrode of the electronic substrate are bonded via metal bumps on the electrode of the semiconductor element.

According to the sixteenth aspect of the present invention, the thermosetting layer is disposed on the electrode surface of the electronic substrate before bonding, and the electrode surface of the electronic substrate can face the electrode surface of the one semiconductor element. An electronic board supply device for storing the electronic board in a state where the electronic board can be supplied;
The electronic substrate transport device transports the electronic substrate housed in the electronic substrate supply device to the electronic substrate bonding position, and the bumps of the one semiconductor element and the electronic substrate at the electronic substrate bonding position The semiconductor ultrasonic bonding apparatus according to the fifteenth aspect, wherein the electrode is positioned through the thermosetting layer.

  According to a seventeenth aspect of the present invention, the thermosetting layer is formed and disposed by applying a thermosetting adhesive to the electrode surface of the electronic substrate before bonding the one semiconductor element to the electronic substrate. A semiconductor ultrasonic bonding apparatus according to the fifteenth aspect, further comprising a coating apparatus for performing the above operation.

  According to an eighteenth aspect of the present invention, the ultrasonic bonding portion is viewed from a semiconductor element bonded to the tip of the plurality of adjacent semiconductor elements held by the wafer sheet of the wafer sheet holding body, The arrangement direction of the semiconductor elements to be joined next, and the joining position where the semiconductor elements are joined next, as seen from the joining position where the semiconductor elements are joined before joining the plurality of semiconductor elements to the one electronic substrate The semiconductor ultrasonic bonding apparatus according to any one of the twelfth to seventeenth aspects, wherein the plurality of semiconductor elements are bonded to an electronic substrate so as to form an angle smaller than 180 degrees with respect to the arrangement direction. provide.

  According to a nineteenth aspect of the present invention, the ultrasonic bonding portion transports a defective semiconductor element among the plurality of semiconductor elements to a defective semiconductor disposal position, and then the thermal peeling layer corresponding to the defective semiconductor element. The semiconductor ultrasonic bonding apparatus according to any one of the twelfth to eighteenth aspects, wherein the defective semiconductor element is separated from the wafer sheet by heating.

  According to the twentieth aspect of the present invention, the control unit ultrasonically bonds the one semiconductor element to the electronic substrate, and then bonds the electronic substrate after bonding to the electronic substrate by the electronic substrate transfer device. Retreating from the position, transporting the next electronic substrate to be bonded to the electronic substrate bonding position, and transferring the semiconductor element to be bonded next by the semiconductor element transfer device to the semiconductor element bonding position; The semiconductor ultrasonic bonding apparatus according to the fourteenth aspect is provided, wherein the electronic substrate to be bonded and the semiconductor element to be bonded next are controlled to be ultrasonic bonded.

  According to the first or twelfth aspect of the present invention, the back surface of the wafer and the wafer sheet of the wafer sheet holder are bonded by a heat release layer, and the wafer is held in the wafer sheet holder in the state where the wafer is held. The bump of the one semiconductor element and the corresponding electrode of the electronic substrate are opposed to each other, and the bump of the one semiconductor element and the electrode of the electronic substrate are brought into contact with each other. Simultaneously with the ultrasonic bonding while heating the electronic substrate, the adhesive force of the thermal peeling layer is weakened by the heating, and the one semiconductor element ultrasonically bonded to the electronic substrate is removed from the wafer sheet. I try to let them leave. As a result, the semiconductor element can be easily and reliably peeled off without locally applying stress to the semiconductor element with a needle or the like when the semiconductor element is peeled off from the adhesive sheet as in the apparatus of Conventional Example 2. In addition, it is possible to prevent the semiconductor element from being damaged or chipped. In addition, since the one semiconductor element is peeled from the thermal peeling layer by using heat applied to the thermosetting layer when the one semiconductor element and the electronic substrate are ultrasonically bonded, The time for ultrasonic bonding of one semiconductor element and the electronic substrate can also be significantly reduced as compared with the apparatus of the second conventional example.

Before continuing the description of the present invention, the same parts are denoted by the same reference numerals in the accompanying drawings.
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, exemplary embodiments of the invention will be described with reference to the drawings.

<< First Embodiment >>
The semiconductor element 2 used in the semiconductor ultrasonic bonding method and apparatus according to the first embodiment of the present invention will be described with reference to FIGS. 1A to 1D, FIGS. 2A to 2E, and FIGS. 3A to 3C. FIG. 1A is a perspective view showing a state in which a wafer 2A divided into individual semiconductor elements 2 is held on a wafer sheet holder 1 of the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention. 1B is a perspective view of one semiconductor element 2, FIG. 1C is an enlarged cross-sectional view of electrodes and metal bumps of one semiconductor element 2, and FIG. 1D is a thermal release sheet 3 which is an example of a thermal release layer. FIG. 2A to 2E show a process in which the wafer 2A before being divided into individual semiconductor elements 2 is held by a wafer sheet 4 which is a part of the wafer sheet holder 1, and the wafer 2A is individually separated. FIG. 3 is a schematic explanatory diagram for explaining a process of being divided into semiconductor elements 2 and being held on a wafer sheet holder 1. FIG. 3A is a schematic view showing a state in which a plurality of semiconductor elements 2 are ultrasonically bonded to one electronic substrate 7, and FIG. 3B is a state in which one semiconductor element 2 is ultrasonically bonded to one electronic substrate 7. FIG. 3C is a partially enlarged view of the electrode bonding portion of FIGS. 3A and 3B.

  As shown in FIG. 1A, the semiconductor element 2 used in the semiconductor ultrasonic bonding method and apparatus according to the first embodiment of the present invention is divided into a plurality of wafers 2A held by the wafer sheet holder 1 by dicing. Is formed. As shown in FIGS. 1B and 1C, a plurality of electrodes 2a formed of nickel, gold, solder, or the like are provided on the electrode surface (front surface) 2b of each semiconductor element 2, and on the plurality of electrodes 2a. Each is provided with metal bumps 2c formed of gold, solder or the like.

  As shown in FIG. 1D, the wafer sheet holder 1 has a ring-shaped outer ring body 1a, a ring-shaped inner ring body 1b having a shorter diameter than the outer ring body 1a, and a circular shape having a diameter longer than that of the outer ring 1a. The wafer sheet 4 and the heat release sheet 3 adhered to the surface (upper surface) of the wafer sheet 4.

  The wafer sheet 4 is sandwiched between the outer ring body 1a and the inner ring body 1b on the entire outer periphery, and the outer surface facing the upper surface 1b-1 of the inner ring body 1b and the upper surface 1b-1 of the inner ring body 1b. The deflection near the center with respect to the position sandwiched by the lower surface 1a-1 of the ring body 1a is stretched so as to be, for example, 1 mm or less (provided in a tensioned state).

As shown in FIG. 1D, the heat release sheet 3 is configured by a three-layer structure of a heat release adhesive layer 3a, a polyester film substrate layer 3b, and a pressure sensitive adhesive layer 3c. The heat release sheet 3 is configured to adhere to the surface (upper surface) of the wafer sheet 4 with the pressure sensitive adhesive layer 3c, and to adhere the adherend (back surface of the wafer 2A) with the heat release adhesive layer 3a. . The heat peelable adhesive layer 3a of the heat peelable sheet 3 has an adhesive force at normal temperature in the same manner as a normal pressure sensitive adhesive sheet. When heated (for example, 100 ° C.), the adhesive force becomes weak (for example, 0). The product is formed so as to be easily peeled off from the heat-release adhesive layer 3a. On the other hand, the pressure-sensitive adhesive layer 3c of the heat release sheet 3 is formed so as not to weaken the adhesive force with the object to be adhered even when heated.
The adhesive force before heating of the heat-peeling adhesive layer 3a of the heat-peeling sheet 3 and the adhesive force of the pressure-sensitive adhesive layer 3c are such that the electrode surface 2b of each semiconductor element 2 of the wafer sheet holder 1 is directed downward, Each semiconductor element 2 is set so as not to fall and be displaced from the wafer sheet 4 even if it is conveyed in the downward state.
An example of the thermal release sheet 3 is a product name Riva Alpha manufactured by Nitto Denko. This Ribaalpha has an adhesive strength with an adherend before heating of, for example, 2.5 to 7.3 N / 20 mm. For example, when heated at 90 ° C. to 170 ° C., the adhesive strength with the adherend is almost zero. Thus, the adherend is easily peeled from the heat-peeling pressure-sensitive adhesive layer 3a. In addition, it can replace with the heat | fever peeling sheet 3, and the same effect can be acquired even if it uses the heat | fever peeling film or heat | fever peeling adhesive which is an example of a heat | fever peeling layer.

Next, a process until the wafer 2A is divided into individual semiconductor elements 2 and held on the wafer sheet holder 1 will be described with reference to FIGS. 1A and 2A to 2E.
In the initial state, as shown in FIG. 2A, a large number of electrodes 2a are formed on the surface (upper surface) of the wafer 2A, that is, the electrode surface 2b, and metal bumps (for example, Gold bumps) 2c are formed. It is assumed that the heat peelable adhesive layer 3a of the heat peelable layer 3 is bonded to the back surface (lower surface) of the wafer 2A. That is, the adhesive force between the wafer 2A and the heat release layer 3 is weakened by heating. Further, it is assumed that the pressure-sensitive adhesive layer 3 c of the thermal peeling layer 3 is bonded to the surface (upper surface) of the wafer sheet 4.

  From this initial state, as shown in FIG. 2B, the thermosetting layer 5 is formed so as to cover the electrode surface 2b, the electrode 2a, and the metal bump 2c of the wafer 2A. The thermosetting layer 5 is formed by coating with a non-conductive paste, and is thermally cured by heating to have a bonding force. Examples of the non-conductive paste include an epoxy resin adhesive, a polyimide resin adhesive, a silicon resin adhesive, and the like.

Next, as shown in FIG. 2C, a part of the thermosetting sheet 5, the wafer 2 </ b> A, the heat release layer 3, and the wafer sheet 4 is formed by a disk-shaped dicer 6 that is disposed substantially perpendicular to the upper surface of the thermosetting sheet 5. Is diced and divided into a plurality of semiconductor elements 2 as shown in FIG. 2D. At this time, the gap between adjacent semiconductor elements 2 after dicing is formed to be 30 μm to 50 μm, for example.
Next, as shown in FIG. 2E, the entire outer periphery of the wafer sheet 4 is sandwiched between the outer ring body 1a and the inner ring body 1b, and the wafer 2A is expanded. As a result, the wafer sheet 4 is stretched so that the deflection in the vicinity of the center with respect to the portion sandwiched between the outer ring body 1a and the inner ring body 1b is 1.0 mm or less, and between the adjacent semiconductor elements 2 The gap is widened to, for example, 0.5 mm to 1.0 mm.
As described above, the wafer 2A is divided into individual semiconductor elements 2 as shown in FIG. 1A and held on the wafer sheet holder 1.

Next, the principle of ultrasonic bonding of one semiconductor element 2 to be bonded to the wafer 2A held on the wafer sheet holder 1 as described above to the electronic substrate 7 will be described with reference to FIGS. 3A to 3C. However, it will be explained.
The electrode surface 7b of the electronic substrate 7 is provided with a plurality of electrodes 7a formed by, for example, gold plating.
Moreover, the code | symbol 8 in FIG. 3A and 3B has shown the ultrasonic bonding tool. The ultrasonic bonding tool 8 is configured such that the one semiconductor element 2 of the wafer sheet holder 1 is bonded to the semiconductor element bonding position A1 (the ultrasonic bonding tool 8 causes the semiconductor element 2 to contact the electronic substrate 7 via the metal bump 2c. The ultrasonic wave is applied to the ultrasonic wave by the ultrasonic bonding tool 8 at the time of ultrasonic bonding in the state where the electrodes are positioned at the bonding position of the semiconductor element 2 when ultrasonic bonding is performed between the electrodes. To the position of the ultrasonic bonding tool 8 at the time of application to the ultrasonic wave, the ultrasonic wave application facing the wafer sheet 4 bonded via the thermal peeling layer 3 and corresponding to the back surface of one semiconductor element 2 Region D1 (because ultrasonic bonding tool 8 cannot apply ultrasonic waves directly to metal bumps 2c of semiconductor element 2 during ultrasonic bonding, ultrasonic waves are applied to semiconductor element 2 via wafer sheet 4. The region of the wafer sheet 4 to which the ultrasonic bonding tool 8 comes into contact at a predetermined pressure, and the thermal peeling layer 3 corresponding to the one semiconductor element 2 is heated via the ultrasonic application region D1. However, an ultrasonic wave can be applied to the metal bump 2c of the one semiconductor element 2.
In the initial state, the electronic substrate 7 has an electronic substrate bonding position B1 facing the electrode surface 2b of the one semiconductor element 2 located at the semiconductor element bonding position A1 (the ultrasonic bonding tool 8 allows the semiconductor element 2 to be connected). For example, as shown in FIGS. 3A and 3B, the suction head 51, which will be described later, is attached to the electronic substrate 7 when the electrodes are ultrasonically bonded to each other via the metal bumps 2 c. It is held and fixed in positioning.

First, the metal bump 2c on the electrode 2a of one semiconductor element 2 of the wafer 2A held on the wafer sheet holder 1 and the corresponding electrode 7a formed on the electronic substrate 7 are positioned to face each other.
Next, the ultrasonic bonding tool 8 is raised to move the one semiconductor element 2 to the semiconductor bonding position A1 toward the electronic substrate 7 positioned and fixed at the electronic substrate bonding position B1. Thereby, as shown in FIGS. 3A to 3C, the metal bumps on the electrodes 2 a of the one semiconductor element 2 with the thermosetting layer 5 interposed between the one semiconductor element 2 and the electronic substrate 7. 2c is brought into contact with the corresponding electrode 7a of the electronic substrate 7 at a predetermined pressure. At this time, the one semiconductor element 2 protrudes above the other semiconductor element 2-1 adjacent to the wafer 2A held by the wafer sheet holder 1 in FIG. 3A (for example, about 0.5 mm). The semiconductor element 2-1 is not in contact with the electronic substrate 7 (in FIG. 3A, the protruding amount is exaggerated for easy understanding).

  In this state, while the thermal peeling layer 3 and the thermosetting layer 5 are heated via the wafer sheet 4 by the ultrasonic bonding tool 8, the thermosetting layer 5 is heated via the wafer sheet 4 and the thermal peeling layer 3. An ultrasonic wave is applied to the one semiconductor element 2. As a result, the adhesive force between the one semiconductor element 2 and the thermal peeling layer 3 is weakened (for example, becomes 0), and the metal bumps 2 c on all the electrodes 2 a of the one semiconductor element 2 are attached to the thermosetting layer 5. It penetrates and contacts the corresponding electrode 7 a of the electronic substrate 7. Then, the thermosetting layer 5 is thermoset in the contacted state, and the one semiconductor element 2 and the electronic substrate 7 are more than the adhesive force between the one semiconductor element 2 and the heat-release layer 3 after heating. Bonded with strong force.

Next, when the pressed state by the ultrasonic bonding tool 8 is released and the ultrasonic bonding tool 8 is separated from the wafer sheet 4, the thermal release layer 3 and the wafer sheet 4 are bonded to the electronic substrate 7 by the tension of the wafer sheet 4. The tension (e.g., several tens of grams) of the wafer sheet 4 away from one semiconductor element 2, that is, the heat release layer 3 and the wafer sheet 4 are separated from the one semiconductor element 2 bonded to the electronic substrate 7 and almost return to the original state. To the initial position before being pressed by the ultrasonic bonding tool 8.
As described above, ultrasonic bonding of the wafer 2A held on the wafer sheet holder 1 to the electronic substrate 7 of the one semiconductor element 2 is completed.

Next, a specific configuration of the ultrasonic bonding tool 8 will be described with reference to FIGS. 3A and 3B.
The ultrasonic bonding tool 8 applies ultrasonic waves to the one semiconductor element 2 at the time of ultrasonic bonding, and includes an ultrasonic application unit 8a, an ultrasonic horn 8f, and an ultrasonic oscillator 8g.
The ultrasonic wave application unit 8a is formed with a rectangular parallelepiped upper part and a thin cylindrical part with a lower part, and an ultrasonic wave application surface 8c having substantially the same size as the back surface of the one semiconductor element 2 on the upper surface of the upper rectangular parallelepiped part. Is applied to the back surface of the one semiconductor element 2.
The ultrasonic horn 8f is formed in a frustum shape, and a portion on the short diameter side is connected to a thin cylindrical body below the ultrasonic wave application unit 8a to transmit ultrasonic waves.
The ultrasonic oscillator 8g is connected to the ultrasonic horn 8f and is connected to a control unit 80 described later, and oscillates ultrasonic waves under the control of the control unit 80.

The ultrasonic wave application surface 8c of the ultrasonic wave application unit 8a is in a state where the one semiconductor element 2 of the wafer sheet holder 1 is positioned at the semiconductor element bonding position A1, and the ultrasonic bonding tool 8 is at the ultrasonic wave application position C1. By being moved so as to be positioned, the ultrasonic wave application region D1 of the wafer sheet 4 can be contacted. A heater 300 (see FIG. 3B), which is an example of a heating device that can heat the thermal peeling layer 3 and the thermosetting layer 5, is provided inside the ultrasonic wave application unit 8a. The ultrasonic wave application unit 8a can heat the thermal peeling layer 3 and the thermosetting layer 5 through the ultrasonic wave application region D1 of the wafer sheet 4 when the heater 300 whose drive is controlled by the control unit 80 generates heat. It is configured.
The heating temperature by the heater 300 differs depending on the materials of the electrodes 2a and metal bumps 2c of the semiconductor element 2, the thermal peeling layer 3, the thermosetting layer 5, and the electrodes 7a of the electronic substrate 7, but the thermosetting layer 5 Is set to a temperature at which the metal bumps 2c are not melted, for example, in the range of 50 ° C. to 250 ° C.
Note that the heater 300 is not limited to being provided only in the ultrasonic wave application unit 8a of the ultrasonic bonding tool 8, but instead of the ultrasonic wave application unit 8a, the electronic substrate 7 is replaced with an electronic substrate 7 as illustrated in FIG. 3B. It may be built in the suction head 51 that holds the suction. Alternatively, the heater 300 may be provided in both the ultrasonic application unit 8 a and the suction head 51 of the ultrasonic bonding tool 8.

The ultrasonic horn 8f transmits the ultrasonic wave generated by the ultrasonic oscillator 8g controlled by the control unit 80 to the semiconductor element 2 via the ultrasonic application unit 8a, the wafer sheet 4, and the thermal peeling layer 3. It is configured to transmit along the electrode surface 2 b of the element 2. In addition, it is preferable that the frequency of the ultrasonic wave generated by the ultrasonic oscillator 8g is set in a range of 20 kHz to 200 kHz in order to reliably perform ultrasonic bonding.
As described above, the ultrasonic bonding tool 8 is configured.

  In the first embodiment, only the ultrasonic wave application unit 8 a having the ultrasonic wave application surface 8 c having the same size as the back surface of the one semiconductor element 2 contacts the semiconductor element 2 through the wafer sheet 4. Thus, although the one semiconductor element 2 is ultrasonically bonded to the electronic substrate 7, the present invention is not limited to this. For example, as shown in FIG. 4A, the ultrasonic wave application unit 8a may be configured to be movable up and down within a rectangular cylindrical cooling block 8b. With this configuration, when the one semiconductor element 2 is ultrasonically bonded to the electronic substrate 7, only the ultrasonic wave application unit 8 a is lifted as illustrated in FIG. 4B via the wafer sheet 4. The one semiconductor element 2 can be brought into contact with the one semiconductor element 2, and the one semiconductor element 2 can be ultrasonically bonded to the electronic substrate 7 by the ultrasonic wave application unit 8 a. On the other hand, at this time, the cooling block 8b is in contact with the other semiconductor element 2-1 via the wafer sheet 4 so that the heat of the heater 300 is not transferred to the other semiconductor element 2-1. 2-1 can be cooled. As a cooling method of the cooling block 8b, for example, a cooling pipe is disposed in the vicinity of the cooling surface 8b-1 of the cooling block 8b, and a temperature (for example, 20 ° C.) at which the adhesive force of the thermal peeling layer 3 does not weaken the cooling pipe. There are a method of flowing a cooling fluid and a method of making the heat capacity of the cooling block 8b larger than the heat capacity of the other semiconductor elements 2-1, so that the cooling block 8b takes away the heat transferred to the other semiconductor elements 2-1. Can be mentioned.

  Further, as shown in FIG. 4A, a suction hole 8d is provided in the ultrasonic bonding tool 8, and the one semiconductor element 2 is sucked into the suction hole 8d by a suction device 8e whose drive is controlled by a control unit 80 described later. The one semiconductor element 2 may be ultrasonically bonded to the electronic substrate 7 while generating a possible suction force and attracting the one semiconductor element 2 by the suction force. With this configuration, it is possible to prevent the positional deviation of the one semiconductor element 2 and to further increase the ultrasonic bonding accuracy between the one semiconductor element 2 and the electronic substrate 7.

  Next, the overall configuration of the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a perspective view showing the overall configuration of the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention, and FIG. 6 is a side view of the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention. FIG.

  The semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention includes a semiconductor element supply apparatus 10, a semiconductor element transfer apparatus 20, an ultrasonic bonding tool 8 including a heater 300 which is an example of a heating apparatus, and an ultrasonic bonding. A tool moving device 30, an electronic substrate supply device 40, an electronic substrate transport device 50, an electronic substrate recognition device 60, a semiconductor element recognition device 70, a control unit 80, and a storage unit 81 are provided.

  The semiconductor element supply device 10 is formed of a cubic box having a plurality of steps therein, and the electrode surface 2b of each semiconductor element 2 of the wafer 2A held by the wafer sheet holder 1 is an electrode of the electronic substrate 7, respectively. A plurality of wafer sheet holders 1 arranged in a state of being opposed to the surface 7b (in FIG. 5 and FIG. 6, the electrode surface 2b faces upward) and a semiconductor element storage portion 11 that stores the respective wafer stages 1 are to be joined. There is an upper and lower lifter 12 that raises and lowers the semiconductor element storage unit 11 so that one wafer sheet holder 1 is positioned at a transferable position 10A (see FIG. 6) in the semiconductor element storage unit 11.

The upper and lower lifters 12 are attached to a screw shaft 13 extending in the vertical direction (hereinafter referred to as ± Z direction) and a lower end portion of the screw shaft 13. A drive motor 14 is provided that can rotate the shaft 13 in forward and reverse directions.
The semiconductor element housing portion 11 is movable upward (hereinafter referred to as + Z direction) by rotating the screw shaft 13 in the forward direction, and downward (hereinafter referred to as “screw shaft 13” by rotating in the opposite direction. It is attached to the upper end of the screw shaft 13 so as to be movable in the −Z direction.

The semiconductor element transfer device 20 is formed in a U-shape and is formed so as to be able to hold the outer peripheral portion of the wafer sheet holder 1 located at the transferable position 10A in the semiconductor element storage portion 11 by an engaging portion (not shown). The wafer sheet holder 1 positioned at the transportable position 10A of the semiconductor element supply apparatus 10 is pulled out, and the semiconductor element bonding position A1 is separated from the transportable position 10A of the semiconductor element supply apparatus 10 in the ± Y direction perpendicular to the ± Z direction. (See FIG. 3A) A holding frame 21 that can be transported up to (see FIG. 3A), and disposed on the base 200 and below the holding frame 21. A Y-axis table (not shown) that moves in the ± Y direction between A1 (see FIG. 3A) is provided.
The Y-axis table extends in the ± Y direction, and is configured to be movable on the screw shaft by rotating the screw shaft (not shown) that is rotatably fixed to the base 200. And a nut member (not shown) fixed to the holding frame 21 and a motor 20M for rotating the screw shaft.

The ultrasonic bonding tool moving device 30 is disposed on the X-axis table 31 and is ultrasonically bonded to the X-axis table 31 that can move the ultrasonic bonding tool 8 in the ± X direction orthogonal to the ± Y direction and the ± Z direction. The Y-axis table 32 that can move the tool 8 in the ± Y direction, and the ultrasonic bonding tool 8 that is arranged on one end and fixed on the Y-axis table 32 can move the ultrasonic bonding tool 8 in the ± Z direction. A Z-axis table 33 is provided.
Each of the tables 31 to 33 of the ultrasonic bonding tool moving device 30 includes a screw shaft (not shown) extending in the X, Y, or ± Z direction, and the screw shaft rotating on the screw shaft. And a motor 31M-33M that rotates the screw shaft. The nut member of the X-axis table 31 is connected to the Y-axis table 32, and the nut member movable on the screw shaft by the rotation of the screw shaft of the Y-axis table 32 is connected to the Z-axis table 33. The nut member that can move on the screw shaft by rotating the screw shaft 33 is connected to the ultrasonic welding tool 8. Thereby, the ultrasonic welding tool 8 can move in the ± X direction, the ± Y direction, and the ± Z direction, respectively, by driving the motors 31M to 33M of the tables 31 to 33 in the forward and reverse directions. Yes.
The ultrasonic bonding tool moving device 30 is driven by the motors 31M to 33M of the tables 31 to 33, so that the wafer sheet is transferred to the semiconductor element transfer device 20 and positioned at the semiconductor element bonding position A1 (see FIG. 3A). An ultrasonic bonding tool 8 is placed at an ultrasonic wave application position C1 (see FIG. 3A) facing the wafer sheet 4 of the holder 1 and corresponding to the back surface of the one semiconductor element 2 of the wafer 2A held by the wafer sheet 4. It is configured so that it can be moved.
Each semiconductor element 2 held by the wafer sheet holder 1 is divided so that the direction divided by the dicer 6 is substantially the same as the X direction and the Y direction in the semiconductor bonding apparatus of the first embodiment. In other words, the semiconductor elements 2 are aligned in the X direction and aligned in the Y direction, and are transported from the transportable position 10A in the semiconductor element storage portion 11 to the semiconductor element bonding position A1. Is preferred. The same applies to the following second embodiment of the present invention.
Further, the direction in which each semiconductor element 2 held by the wafer sheet holder 1 is divided by the dicer 6 and the X direction and the Y direction in the semiconductor bonding apparatus of the first embodiment are not substantially the same direction. When arranged, the thermosonic welding tool moving device 30 is further provided with a θ axis (not shown) that allows the ultrasonic welding tool 8 to rotate on the XY plane, and the division direction, the X direction, It is preferable to be configured to be adjustable so that the Y direction is substantially the same direction. The same applies to the following second embodiment of the present invention.

  The electronic substrate supply device 40 is formed of a rectangular parallelepiped box having a plurality of steps therein, and the plurality of electronic substrates 7 are arranged such that the electrode surface 7b of the electronic substrate 7 can face the electrode surface 2b of the semiconductor element 2. The electronic substrate storage unit 41 for storing the tray 42 placed in the above-described state (here, the electrode surface 7b is downward) and the tray 42 to be joined can be transported in the electronic substrate storage unit 41. It has the up-and-down lifter 12-1 which raises / lowers the electronic substrate storage part 41 so that it may be located in the position 40A (refer FIG. 6). The configuration of the upper and lower lifters 12-1 is the same as the configuration of the upper and lower lifters 12 of the semiconductor element supply device 10, and thus description thereof is omitted.

  The electronic substrate transport device 50 is disposed on the base 200, pulls out the tray 42 located at the transportable position 40A of the electronic substrate supply device 40, and can transport the tray 42 to the outside of the electronic substrate storage unit 41; One electronic board 7 of the plurality of electronic boards 7 placed on the tray 42 drawn out of the electronic board storage part 41 by the tray transfer device 45 is sucked and can be transferred to the electronic board bonding position B1. The suction head 51 is arranged. Further, the electronic substrate transport device 50 includes a Y-axis table 53 whose side is fixed to a mounting wall 201 erected on the base 200 above the tray transport device 45 and capable of moving the suction head 51 in the ± Y direction. The X-axis table 52 arranged on the Y-axis table 53 and capable of moving the suction head 51 in the ± X direction, and the Z-axis table arranged on the X-axis table 52 and movable in the ± Z direction. 54 and a θ-axis 55 that is disposed at the lower end of the Z-axis table 54 and that allows the suction head 51 to be rotated on the XY plane by a separately provided motor (not shown).

The tray transfer device 45 includes a holding base 46 formed to be able to hold a tray 42 on which a plurality of electronic boards 7 are placed, and a Y axis fixed to the base 200 and capable of moving the holding base 46 in the ± Y direction. And a table 47. The Y-axis table 47 includes a screw shaft (not shown) extending in the ± Y direction, a nut member (not shown) that can move on the screw shaft as the screw shaft rotates, and the screw shaft. And a motor 47M for rotating the motor. A holding base 46 is fixed to the nut member of the Y-axis table 47. As a result, the holding base 46 can move in the ± Y directions by driving the motor 47M of the Y-axis table 47 in the forward and reverse directions.
The tray transport device 45 pulls out the tray 42 located at the transportable position 40A of the electronic substrate supply device 40 by the holding base 46 configured to be movable in the ± Y direction as described above, and is external to the electronic substrate storage unit 41. It is configured to be transportable.

  Each of the tables 52 to 54 of the electronic substrate transport apparatus 50 includes a screw shaft (not shown) extending in the ± X, ± Y, or ± Z directions, and the screw shaft rotating on the screw shaft. And a motor 52M to 54M that rotates the screw shaft. A nut member that can move on the screw shaft by rotating the screw shaft of the Y-axis table 53 is connected to the X-axis table 52, and can move on the screw shaft by rotating the screw shaft of the X-axis table 52. The nut member is connected to the Z-axis table 54. A nut member that can move on the screw shaft as the screw shaft of the Z-axis table 54 rotates is connected to the θ shaft 55. As a result, the suction head 51 can move in the ± X direction, ± Y direction, and ± Z direction by driving the motors 52M to 54M of the tables 52 to 54 in the forward and reverse directions, respectively, and the θ axis 55 These motors can be rotated forward and backward on the XY plane by being controlled to rotate in forward and reverse directions. Further, the suction head 51 includes a suction hole 51h (see FIG. 3B), and the suction device 56 has a suction force capable of sucking the electronic substrate 7 and the electronic substrate 7 and the semiconductor element 2 after ultrasonic bonding into the suction hole 51h. By being generated, the electronic substrate 7 can be adsorbed.

  The electronic substrate transport device 50 is configured to have the one electronic substrate placed on the one tray 42 transported out of the electronic substrate storage unit 41 by the tray transport device 45 by the suction head 51 configured as described above. 7 is sucked and conveyed to the electronic substrate bonding position B1 (see FIG. 3A) facing the electrode surface 2b of the one semiconductor element 2 located at the semiconductor element bonding position A1, and at the electronic substrate bonding position B1. The electrodes 7a of the one electronic substrate 7 can be positioned on the metal bumps 2c on the electrodes 2a of the one semiconductor element 2.

  The electronic substrate recognition device 60 is fixed to the base 200 below the electronic substrate conveyance path where the electronic substrate conveyance device 50 adsorbs one electronic substrate 7 from the tray 42 by the adsorption head 51 and positions it at the electronic substrate bonding position B1. The camera 61 is configured. The electronic board recognizing device 60 recognizes a recognition target portion (not shown, for example, the position of the electrode 7a or a recognition mark provided on the electronic board 7) before the positioning is performed by the electronic board transfer device 50. Are recognized by the camera 61 and the electronic substrate recognition data is output to the control unit 80.

  The semiconductor element recognition device 70 is composed of a camera 71 fixed to the Z-axis table 54 of the electronic substrate transfer device 50. The semiconductor element recognition device 70 is configured to recognize a recognition target portion (not shown, for example, the position of the electrode 2a or the 1) of the one semiconductor element 2 before ultrasonic bonding of the one semiconductor element 2 and the one electronic substrate 7. The reference position of a recognition mark or the like provided on one semiconductor element 2) is recognized by the camera 71, and the semiconductor element recognition data is output to the control unit 80.

  The control unit 80 includes the semiconductor element supply device 10, the semiconductor element transfer device 20, the heater 300 and the ultrasonic oscillator 8g of the ultrasonic bonding tool 8, the ultrasonic bonding tool moving device 30, the electronic substrate supply device 40, Based on an operation program and mounting data that are connected to the electronic substrate transport device 50, the suction device 56, the electronic substrate recognition device 60, the semiconductor element recognition device 70, and the storage unit 81, and stored in the storage unit 81 in advance. And control each operation. The control operation of the control unit 80 will be described in detail below.

In the semiconductor ultrasonic bonding apparatus according to the first embodiment, the semiconductor element transfer apparatus 20, the ultrasonic bonding tool 8 including the heater 300, the ultrasonic bonding tool moving apparatus 30, and the electronic substrate supply apparatus 40 are provided. The electronic substrate transfer device 50, the suction device 56, the control unit 80, and the storage unit 81 constitute an ultrasonic bonding unit.
The semiconductor ultrasonic bonding apparatus according to the first embodiment is configured as described above.

  Next, the bonding operation of the semiconductor ultrasonic bonding apparatus according to the first embodiment will be described with reference to FIGS. 5, 6, and 7A to 7F. 7A to 7F are schematic explanatory views showing the bonding operation of the semiconductor ultrasonic bonding apparatus according to the first embodiment, and this bonding operation is performed under the control of the control unit 80. Here, it is assumed that the one semiconductor element 2 and the one electronic substrate 7 have substantially the same shape and size (for example, a square of 1 mm square to 40 mm square).

  First, driving of the motor 14 of the upper and lower lifters 12 of the semiconductor element supply apparatus 10 is controlled, and the semiconductor element storage portion 11 is moved up and down by the upper and lower lifters 12 to hold one wafer sheet to be bonded in the semiconductor element storage portion 11. The body 1 is positioned at the transportable position 10A, and the drive of the motor 14-1 of the upper and lower lifters 12-1 of the electronic board supply device 40 is controlled to move the upper and lower lifters 12-1 up and down. One tray 42 to be joined is positioned at the transportable position 40A.

  Next, the driving of the motor 20M of the Y-axis table (not shown) of the semiconductor element transfer device 20 is controlled, and the wafer sheet holder 1 positioned at the transferable position 10A in the semiconductor element storage portion 11 by the holding frame 21. Is pulled out from the inside of the semiconductor element storage unit 11, and one semiconductor element 2 to be bonded first in the wafer sheet holder 1 is placed in the semiconductor element bonding position A1 (see FIG. 7A) in the + Y direction (see FIG. 5). Transport and position. While the wafer sheet holder 1 is moved in the + Y direction (see FIG. 5) from the transferable position 10A toward the semiconductor element bonding position A1, the semiconductor element recognition device 70 is moved by driving the electronic substrate transfer device 50. Then, the semiconductor element recognition device 70 recognizes the recognition target portion of the first semiconductor element 2 to be bonded in the wafer sheet holder 1, and the semiconductor element recognition device 70 transfers the semiconductor element to the control unit 80. Output recognition data.

At this time, the driving of the motor 47M of the tray transport device 45 of the electronic substrate transport device 50 is controlled, and the tray 42 positioned at the transportable position 40A in the electronic substrate storage unit 41 is moved by the holding base 46 to the electronic substrate. It is conveyed outside the storage unit 41. Thereafter, the respective motors 52M to 54M of the respective tables 52 to 54 of the electronic substrate transport device 50 and the suction device 56 are controlled so as to be joined first in the tray 42 by the suction head 51. One electronic substrate 7 is adsorbed and picked up from the tray 42, and the electronic substrate bonding preparation position B2 above the electronic substrate bonding position B1 (above the electronic substrate bonding position B1 and the electronic substrate bonding position B1). To the next position to be bonded (preparation position for ultrasonic bonding of the electronic substrate 7) (see FIG. 7A). The electronic substrate recognition apparatus is configured such that one electronic substrate 7 to be bonded first passes over the electronic substrate recognition device 60 while moving from the transportable position 40A to the electronic substrate bonding preparation position B2. 60 recognizes a recognition target portion (not shown) of the electronic substrate 7 and outputs electronic substrate recognition data from the electronic substrate recognition device 60 to the control unit 80.
Next, the driving of the respective motors 31M to 33M of the respective tables 31 to 33 of the ultrasonic bonding tool moving device 30 is controlled to bring the ultrasonic bonding tool 8 into contact with the back surface of the one semiconductor element 2 to be bonded. The ultrasonic wave application preparation position C2 facing the ultrasonic wave application area D1 below the ultrasonic wave application area D1 of the wafer sheet 4 to be performed (position below the ultrasonic wave application area D1 and away from the ultrasonic wave application area D1) Then, it is moved to the preparation position of the ultrasonic bonding tool 8 for applying ultrasonic waves (see FIG. 7A).

  In this way, after one semiconductor element 2 to be bonded is positioned at the semiconductor element bonding position A1, when the ultrasonic bonding tool 8 is positioned at the ultrasonic wave application preparation position C2, it is input to the control unit 80. On the basis of the semiconductor element recognition data of the semiconductor element recognition device 70, the driving of the respective motors 31M to 33M of the respective tables 31 to 33 of the ultrasonic bonding tool moving device 30 is controlled by the control unit 80, thereby positioning correction. Has been. Further, when one electronic board 7 to be joined is positioned at the electronic board joining preparation position B2, the electronic board is based on the electronic board recognition data of the electronic board recognition device 60 input to the control unit 80. The driving of the motors 52M to 54M of the X-axis table 52, the Y-axis table 53 and the Z-axis table 54 of the transport device 50, and the motor (not shown) of the θ-axis 55 is controlled by the control unit 80 to perform positioning. It has been corrected.

  Next, the driving of the motor 33M of the Z-axis table 33 of the ultrasonic welding tool moving device 30 is controlled to raise the ultrasonic welding tool 8 from the ultrasonic wave application preparation position C2 to the ultrasonic wave application position C1, and thereby the ultrasonic wave application surface. 8c is brought into contact with the ultrasonic wave application region D1 of the wafer sheet 4, and the driving of the motor 54M of the Z-axis table 54 of the electronic substrate transport apparatus 50 is controlled to lower the suction head 51 so that the one electronic substrate 7 is moved. The plurality of electrodes 7a of the one electronic substrate 7 are moved down from the electronic substrate bonding preparation position B2 to the electronic substrate bonding position B1 and between the ultrasonic application surface 8c of the ultrasonic bonding tool 8 and the suction head 51. Correspondingly, the metal bumps 2c on the plurality of electrodes 2a of the one semiconductor element 2 are pressed and contacted with a predetermined pressure through the thermosetting layer 5 on the semiconductor element 2 (see FIG. Referring B and FIG. 7C). The predetermined pressure is preferably set in the range of 10 g to 50 g / bump in order to reliably perform ultrasonic bonding.

Next, the ultrasonic oscillator 8g and the heater of the ultrasonic bonding tool 8 are pressed with a predetermined pressure with the one semiconductor element 2 and the one electronic substrate 7 sandwiched between the ultrasonic bonding tool 8 and the suction head 51. By controlling the driving of 300, ultrasonic bonding between the one semiconductor element 2 and the one electronic substrate 7 is performed while heating. The heater 300 may be started to be heated before coming into contact with the ultrasonic wave application region D1 of the wafer sheet 4.
By this ultrasonic bonding and heating operation, the metal bumps 2c on the electrodes 2a of the one semiconductor element 2 and the electrodes 7b of the one electronic substrate 7 are ultrasonically bonded, and heat separation is performed via the wafer sheet 4. The layer 3 is also heated, and the adhesive force between the one semiconductor element 2 and the thermal peeling layer 3 is weakened, and the thermosetting layer 5 is heated via the wafer sheet 4, the thermal peeling layer 3 and the semiconductor element 2, The thermosetting layer 5 is thermoset in a state where all the electrodes 2a of the one semiconductor element 2 pass through the thermosetting layer 5 and are in contact with the electrodes 7a of the electronic substrate 7, respectively. And the electronic substrate 7 are bonded with a force stronger than the adhesive force between the one semiconductor element 2 and the heat-release layer 3 after heating.

  Next, the driving of the motor 33M of the Z-axis table 33 of the ultrasonic bonding tool moving device 30 is controlled to lower the ultrasonic bonding tool 8 from the ultrasonic application position C1 to the ultrasonic application preparation position C2 and to carry the electronic substrate. The driving of the motor 54M of the Z-axis table 54 of the apparatus 50 is controlled so that the one electronic board 7 sucked and held by the sucking head 51 and the one semiconductor element 2 is ultrasonically bonded is connected to an electronic board bonding position. The position is raised from B1 to the electronic substrate bonding preparation position B2. At this time, the one semiconductor element 2 is separated from the thermal peeling layer 3 because the bonding strength with the electronic substrate 7 is stronger than the adhesive strength with the heated thermal peeling layer 3 (see FIG. 7D).

Next, the respective motors 52M to 54M of the respective tables 52 to 54 of the electronic substrate transport device 50 and the driving of the suction device 56 are controlled so that the one electronic substrate 7 and the one semiconductor element 2 after bonding are The electronic board is transported from the joining preparation position B2 to above the tray 42 (or a separately provided tray), placed on the joining completion component placement space of the tray 42 (or a separately provided tray), and the suction head 51. The suction state of the electronic substrate 7 is released.
At this time, the driving of the motors 31M to 33M of the respective tables 31 to 33 of the ultrasonic bonding tool moving device 30 is controlled, and the ultrasonic bonding tool 8 is applied with the next ultrasonic wave from the ultrasonic wave application preparation position C2. It moves to the preparation position C2-1 (refer FIG. 7E and FIG. 7F).

Next, the driving of the respective motors 52M to 54M and the suction device 56 of the respective tables 52 to 54 of the electronic substrate transport apparatus 50 is controlled, and the electronic head 7 to be joined next by the suction head 51 is placed on the tray 42. It is adsorbed and picked up from the inside and transported to the next electronic substrate bonding preparation position B2-1.
Hereinafter, as described above, the electronic substrate 7 held by the suction head 51 and the semiconductor element 2 above the ultrasonic bonding tool 8 are heated while being heated between the suction head 51 and the ultrasonic bonding tool 8. Sonic bonded.
Hereinafter, the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention sequentially obtains the one electronic substrate 7 and the one semiconductor element 2 after a plurality of bonding by performing the same operation as described above. Can do.
When all of the plurality of electronic substrates 7 placed on the tray 42 and to be joined are joined to the semiconductor element 2, the drive of the motor 47M of the tray transport device 45 is controlled to complete the joining of the tray 42. Is returned to the electronic substrate storage unit 41 of the electronic substrate supply device 40 by the tray transfer device 45, and a new tray 42 on which a plurality of electronic substrates 7 before bonding are placed can be transferred in the electronic substrate storage unit 41. The tray 40 is transported from the position 40 </ b> A to the outside of the electronic substrate storage unit 41. Similarly, when the bonding of all the semiconductor elements 2 to be bonded to the wafer sheet holder 1 is completed, the driving of the motor 20M of the Y-axis table (not shown) of the semiconductor element transfer device 20 is controlled. Then, the bonded wafer sheet holder 1 is returned to the semiconductor element storage unit 11 of the semiconductor element supply apparatus 10, and a new wafer sheet holder 1 holding a plurality of semiconductor elements 2 before bonding is replaced with the semiconductor element storage unit 11. The semiconductor element is transported from the transportable position 10 </ b> A to the semiconductor element joint position A <b> 1 outside the semiconductor element housing 11.

  In the semiconductor ultrasonic bonding method and apparatus according to the first embodiment of the present invention, the wafer sheet 4 and the wafer 2A of the wafer sheet holder 1 are bonded by the heat release layer 3, and the wafer 2A is held by the wafer sheet holder 1. In this state, the electrode 2a of one semiconductor element 2 of the wafer 2A is opposed to the electrode 7a of the electronic substrate 7 corresponding thereto, and the electrode 2a of one semiconductor element 2 and the electrode 7a of the electronic substrate 7 are in contact with each other. When the one semiconductor element 2 and the electronic substrate 7 are heated by the heater 300 and an ultrasonic wave is applied by the ultrasonic oscillator 8g and ultrasonic bonding is performed, the thermosetting layer 5 is thermoset by the heat of the heater 300 simultaneously. However, the adhesive force of the heat release layer 3 is weakened so that the one semiconductor element 2 ultrasonically bonded to the electronic substrate 7 is detached from the wafer sheet 4. As a result, the semiconductor element can be easily and reliably peeled off without locally applying stress to the semiconductor element with a needle or the like when the semiconductor element is peeled off from the adhesive sheet as in the apparatus of Conventional Example 2. In addition, it is possible to prevent the semiconductor element from being damaged or chipped. In addition, since the one semiconductor element is peeled off from the thermal peeling layer 3 by using heat applied to the thermosetting layer 5 when the one semiconductor element 2 and the electronic substrate 7 are ultrasonically bonded, The time for bonding one semiconductor element 2 and the electronic substrate 7 can also be significantly reduced as compared with the apparatus of the conventional example 2.

  In the first embodiment, the one semiconductor element 2 and the one electronic substrate 7 have substantially the same size, but the present invention is not limited to this. For example, when only one semiconductor element 2 is bonded to the electronic substrate 7, the size of the one electronic substrate 7 may be larger than the size of the one semiconductor element 2.

  In the first embodiment, both the ultrasonic bonding tool 8 and the suction head 51 are moved so as to be pressed from both the back surface side of the one semiconductor element 2 and the back surface side of the electronic substrate 7. Although configured, the present invention is not limited to this. For example, even if it is configured such that either one of the back surface side of the one semiconductor element 2 and the back surface side of the electronic substrate 7 is fixed, for example, by being placed on a fixing base, and pressed from the other side. The effect of can be obtained.

<< Second Embodiment >>
A semiconductor ultrasonic bonding method and apparatus according to a second embodiment of the present invention will be described with reference to FIGS. 8 and 9. FIG. 8 is a perspective view showing the entire configuration of the semiconductor ultrasonic bonding apparatus according to the second embodiment of the present invention, and FIG. 9 is a side view of the semiconductor ultrasonic bonding apparatus according to the second embodiment of the present invention. FIG. The semiconductor ultrasonic bonding apparatus according to the second embodiment of the present invention is replaced with the semiconductor element transfer apparatus 20, the ultrasonic bonding tool moving apparatus 30, and the electronic substrate transfer apparatus 50 of the semiconductor ultrasonic bonding apparatus according to the first embodiment. The semiconductor element transfer apparatus 20a, the ultrasonic bonding tool moving apparatus 30a, and the electronic substrate transfer apparatus 50a are different from the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention in that they further include an adsorption stage 9. Since the other points are the same as those of the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention, overlapping description is omitted.

  In the semiconductor ultrasonic bonding method and apparatus according to the second embodiment of the present invention, the electronic substrate bonding position B1a (with the ultrasonic bonding tool 8 is used to connect the semiconductor element 2 to the electronic substrate 7) with the electrode surface 7b of the electronic substrate 7 facing upward. The electrode of the semiconductor element 2 is transferred to the bonding position of the electronic substrate 7 when the electrodes are bonded to each other through the metal bumps 2c (see FIG. 10A) and placed on the suction stage 9. The semiconductor element bonding position A1a (see FIG. 9) is held by the wafer sheet holder 1 with the surface 2b facing downward (see FIG. 9) (the ultrasonic bonding tool 8 causes the semiconductor element 2 to contact the electronic substrate 7 via the metal bump 2c). The electrode 2a of the one semiconductor element 2 by bringing the ultrasonic bonding tool 8 into contact therewith from above the one semiconductor element 2. The metal bump 2c is brought into contact with the corresponding electrode 7a of the electronic substrate 7 and sandwiched between the ultrasonic bonding tool 8 and the suction stage 9 to heat the one semiconductor element 2 and the electronic substrate 7 while heating. Ultrasonic bonding is performed by applying a sound wave.

  In the semiconductor ultrasonic bonding apparatus according to the second embodiment of the present invention, the semiconductor element storage portion 11 of the semiconductor element supply apparatus 10 holds the wafer sheet with the electrode surface 2b of each semiconductor element 2 facing down (−Z direction). The electronic substrate storage unit 41 of the electronic substrate supply device 40 holds the tray 42 with the electrode surface 7b of each electronic substrate 7 facing upward (+ Z direction).

  The semiconductor element transfer device 20a is formed in a U-shape and is formed so as to be able to hold the outer peripheral portion of the wafer sheet holder 1 located at the transferable position 10A in the semiconductor element storage portion 11 with an engaging portion (not shown). The wafer sheet holder 1 positioned at the transportable position 10A of the semiconductor element supply apparatus 10 is pulled out, and a semiconductor element bonding preparation position A2a above the semiconductor element bonding position A1a (above the semiconductor element bonding position A1a and the semiconductor element). Is transported to a semiconductor element bonding position A1a via a position (see FIG. 10B) which is a position distant from the bonding position A1a for ultrasonic bonding of one semiconductor element 2 to be bonded next. A possible holding frame 21a is provided. Further, the semiconductor element transfer device 20a has a holding frame 21a fixed thereto, a θ axis 25a that allows the holding frame 21a to be rotated on an XY plane by a motor (not shown), and a holding frame 21a that is a forward / reverse of the motor 24aM. A Z-axis table 24a capable of moving back and forth in the ± Z direction by driving, a Y-axis table 23a fixed to the Z-axis table 24a, and capable of moving the holding frame 21a back and forth in the ± Y direction by forward / reverse driving of the motor 23aM; An axis table 23a is fixed, and one end is fixed to a mounting wall 201 erected on the base 200, and the holding frame 21a is moved forward and backward in the ± X direction by forward / reverse driving of the motor 22aM. I have.

  The ultrasonic bonding tool moving device 30a is configured in the same manner as the semiconductor element transfer device 20a except that the XYZ axis tables 31 to 33 are arranged above the wafer sheet holder 1.

The electronic substrate transport device 50a is equipped with a tray transport device 45 and a large number of trays 42 placed on the tray 42 drawn out of the electronic substrate storage portion 41 from the transportable position 40A in the electronic substrate storage portion 41 by the tray transport device 45. Among the electronic substrates 7, there is provided an adsorption head 51 a that can adsorb and hold one electronic substrate 7 to be bonded and can be conveyed to the electronic substrate bonding position B 1 a. In addition, the electronic substrate transport apparatus 50a has a suction head 51a fixed to the lower end and a Z-axis 55a that causes the suction head 51a to rotate forward and backward on the XY plane by a Z-axis rotation drive motor 55aM and a Z-axis 55a. A Z-axis table 54a, which can move the suction head 51a forward / backward in the ± Z direction by forward / reverse driving of the motor 54aM via the Z-axis 55a, and a Z-axis table 54a supported so as to hang down are supported via the Z-axis table 54a. An X-axis table 52a capable of moving the suction head 51a forward and backward in the ± X directions by forward / reverse driving of a motor 52aM, and the X-axis table 52a supported on the upper surface side while being disposed on the base 200, and a Z-axis table 54a and The suction head 51a is placed via the X-axis table 52a at a position where the one electronic substrate 7 can be sucked and held from the tray 42, and the electric power on the suction stage 9. A Y-axis table 53a that can move forward and backward in the ± Y direction by forward / reverse driving of a motor 53aM between the electronic substrate bonding position B1a of the sub-substrate 7 is provided.
The suction head 51 a has two suction nozzles 51 a-1 and 51 a-2 arranged with a phase difference of 180 degrees. A suction device 56a is independently connected to each of the two suction nozzles 51a-1 and 51a-2 so as to work on each of the suction nozzles 51a-1 and 51a-2.

For example, on the tray side, the electronic substrate transfer device 50a is bonded and held by one of the suction nozzles 51a-1 and 51a-2 by one suction nozzle and the semiconductor element 2 is bonded. 7 is stored in the tray 42 to release the suction, and the suction nozzles that have been released from the suction are placed on one tray 42 to be joined, which is transported out of the electronic substrate storage unit 41 by the tray transport device 45. One electronic substrate 7 to be joined next is adsorbed from among the electronic substrates 7. In the above description, the electronic substrate 7 to be bonded next is sucked by the suction nozzle whose suction is released. However, the Z-axis rotation drive motor 55aM rotates the Z-axis 55a by 180 degrees to suck the other suction substrate. You may make it adsorb | suck the one electronic substrate 7 used as the joining object next with a nozzle.
On the suction stage 9 side, the bonded electronic substrate 7 located at the electronic substrate bonding position B1a of the suction stage 9 is sucked and held by one of the suction nozzles 51a-1 and 51a-2. After the Z-axis 55a is rotated 180 degrees by the shaft rotation drive motor 55aM, the electronic substrate 7 to be bonded, which is suction-held on the other suction nozzle on the tray side by the other suction nozzle, is bonded to the suction stage 9 on the electronic substrate. Place on B1a to release suction.

  As an example, the suction stage 9 has a rectangular holding plate 9a larger than the electrode surface 2b of the one semiconductor element 2, an upper end portion fixed to the lower surface of the holding plate 9a, and a lower end portion fixed to the base 200. A Z-axis table 9b configured to be movable up and down by driving a motor (not shown) separately provided with a holding plate 9a in the forward and reverse directions is provided. A number of suction holes (not shown) are formed in the holding plate 9a. The suction plate (not shown) provided separately is sucked from the suction holes and placed on the holding plate 9a for positioning. The electronic substrate 7 can be sucked and held.

  The electronic board recognition device 60a is composed of a camera 61a fixed to the −Y direction side of the Z-axis table 54 of the electronic board transfer device 50a. The electronic board recognizing device 60a is placed on the holding plate 9a by the electronic board conveying device 50a, positioned on the electronic board 7 that is positioned and held by suction (not shown, for example, the position of the electrode 7a or the electronic board 7 is provided on the electronic board 7). The reference position of the recognized recognition mark or the like) is recognized by the camera 61a, and the electronic substrate recognition data is output to the control unit 80.

  The semiconductor element recognizing device 70a has a base below a semiconductor element transport path (a path passing through the transportable position 10A and the semiconductor element joint position A1a) by the semiconductor element transport apparatus 20a and in the vicinity of the holding plate 9a of the suction stage 9. The camera 71 a is fixed to 200. The semiconductor element recognizing device 70a is configured to recognize a recognition target portion of the one semiconductor element 2 (not shown, for example, the position of the electrode 2a or one semiconductor element 2) before the one semiconductor element 2 and the electronic substrate 7 are joined. The reference position of the provided recognition mark or the like) is recognized by the camera 71a, and the semiconductor element recognition data is output to the control unit 80.

The semiconductor ultrasonic bonding apparatus according to the second embodiment is configured as described above.
Next, the bonding operation of the semiconductor ultrasonic bonding apparatus according to the second embodiment will be described with reference to FIGS. 8, 9, and 10A to 10E. 10A to 10E are schematic explanatory views showing the bonding operation of the semiconductor ultrasonic bonding apparatus according to the second embodiment, and this bonding operation is performed under the control of the control unit 80. Here, it is assumed that the size of the one electronic substrate 7 is sufficiently larger than the size of the one semiconductor element 2 (for example, 10 times the size).

  First, driving of the motor 14 of the upper and lower lifters 12 of the semiconductor element supply apparatus 10 is controlled, and the semiconductor element storage portion 11 is moved up and down by the upper and lower lifters 12 to hold one wafer sheet to be bonded in the semiconductor element storage portion 11. The body 1 is positioned at the transportable position 10A, and the drive of the motor 14-1 of the upper and lower lifters 12-1 of the electronic board supply device 40 is controlled to move the upper and lower lifters 12-1 up and down. One tray 42 to be joined is positioned at the transportable position 40A.

  Next, the driving of the motor 47M of the tray transfer device 45 of the electronic substrate transfer device 50a is controlled, and the tray 42 located at the transferable position 40A in the electronic substrate storage unit 41 is moved by the holding base 46 in the electronic substrate storage unit 41. Transport outside. Thereafter, the motors 52aM to 54aM of the respective tables 52a to 54a of the electronic substrate transport apparatus 50a and the driving of the suction device 56a are controlled, and the objects to be joined in the tray 42 by the suction nozzle 51a-1 of the suction head 51a. One electronic substrate 7 to be absorbed is picked up from the tray 42 and conveyed to the electronic substrate bonding position B1a (see FIG. 10A). When the electronic substrate 7 to be bonded first is moved to the electronic substrate bonding position B1a, the electronic substrate 7 to be bonded first from the tray 42 or next to both the suction nozzles 51a-1 and 51a-2. When the electronic substrate 7 to be bonded is operated by being sucked and the electronic substrate 7 to be bonded and the one semiconductor element 2 are first bonded to one of the suction nozzles, the bonding target is next. The electronic substrate 7 before joining becomes a state where it is adsorbed by the other suction nozzle.

At this time, the driving of the motor (not shown) of the Z-axis table 9b of the suction stage 9 and the driving of the suction device (not shown) are controlled, so that the holding plate 9a is placed on the electronic board below the electronic board bonding position B1a. Holding the electronic substrate from the holding preparation position E2 (a preparation position for supporting the lower surface of the electronic substrate 7 by the holding plate 9a below the electronic substrate bonding position B1a and away from the electronic substrate bonding position B1a). A position E1 (position below the electronic substrate bonding position B1a and a position where the lower surface of the electronic substrate 7 at the electronic substrate bonding position B1a is supported and held by the holding plate 9a) is held at the electronic substrate holding position E1. One electronic substrate to be bonded to the plate 9a, which is attracted and held by the suction nozzle 51a-1 and moved to the electronic substrate bonding position B1a and positioned at the electronic substrate bonding position B1a. 7, is held by suction. At this time, the suction device 56a of the electronic substrate transport device 50a is controlled to release the suction holding state of the first electronic substrate 7 to be bonded by the suction nozzle 51a-1.
Next, the electronic substrate recognition device fixed to the electronic substrate transfer device 50a is controlled above the one electronic substrate 7 to be bonded and held on the suction stage 9 by controlling the driving of the electronic substrate transfer device 50a. By moving 60a, the electronic substrate recognition device 60a recognizes a recognition target portion (not shown) of one electronic substrate 7 to be bonded, and the electronic substrate recognition device 60a transfers the electronic substrate to the control unit 80. Output recognition data.

Next, the respective motors 22aM to 24aM of the respective tables 22a to 24a of the semiconductor element transport device 20a and the drive of the motor of the θ-axis 25a are controlled, and the transportable position 10A in the semiconductor element storage 11 by the holding frame 21a. The wafer sheet holding body 1 positioned at the position 1 is pulled out from the semiconductor element storage 11 and one semiconductor element 2 to be bonded first in the wafer sheet holding body 1 is conveyed to the semiconductor element bonding preparation position A2a in the + Y direction. (See FIG. 10B). While the wafer sheet holder 1 moves from the transportable position 10A toward the semiconductor element bonding preparation position A2a, the wafer sheet holder 1 passes over the semiconductor element recognition apparatus 70a, and the semiconductor element recognition apparatus 70a The recognition target portion (not shown) of one semiconductor element 2 to be bonded first in the wafer sheet holder 1 is recognized, and the semiconductor element recognition data is sent from the semiconductor element recognition device 70a to the control unit 80. Output.
At this time, the driving of the respective motors 31M to 33M of the respective tables 31 to 33 of the ultrasonic bonding tool moving device 30a is controlled so that the ultrasonic bonding tool 8 is connected to the one semiconductor element 2 to be bonded. The ultrasonic application preparation position C2a (above the ultrasonic application area D1a and away from the ultrasonic application area D1a and facing the ultrasonic application area D1a of the wafer sheet 4 in contact with the back surface. 8 to a preparation position for applying an ultrasonic wave) (see FIG. 10B).

  In this manner, when the ultrasonic bonding tool 8 is positioned at the ultrasonic wave application preparation position C2a after one semiconductor element 2 to be bonded is positioned at the semiconductor element bonding preparation position A2a, the ultrasonic bonding tool is used. 8, based on the semiconductor element recognition data of the semiconductor element recognition device 70 a input to the control unit 80, the control units respectively drive the motors 31 </ b> M to 33 </ b> M of the tables 31 to 33 of the ultrasonic bonding tool moving device 30 a. Positioning correction is performed under the control of 80.

  Next, the driving of the motors 22aM to 24M of each table 22a to 24a and the motor of the θ axis 25a of each table 22a to 24a of the semiconductor element transport device 20a is controlled to move the wafer sheet holder 1 from the semiconductor element bonding preparation position A2a to the semiconductor element. The metal bumps 2c on the plurality of electrodes 2a of one semiconductor element 2 to be bonded are brought into contact with the corresponding plurality of electrodes 7a on the electronic substrate 7 respectively (see FIG. 10C). ). At the same time, the driving of the motor 33M of the Z-axis table 33 of the ultrasonic bonding tool moving device 30a is controlled to move the ultrasonic bonding tool 8 from the ultrasonic bonding preparation position C2a to the ultrasonic wave application position C1a (supersonic wave at the time of ultrasonic bonding). The ultrasonic bonding tool 8 is lowered to the position of the ultrasonic bonding tool 8 when applying ultrasonic waves to the metal bumps 2 c of the semiconductor element 2, and the ultrasonic application surface 8 c of the ultrasonic bonding tool 8 is moved to the wafer sheet 4. It is made to contact with the back surface of the one semiconductor element 2 to be bonded through the ultrasonic wave application region D1a (see FIG. 10C). Note that the two semiconductor elements 2 on the right side in FIG. 10C are not in contact with the one electronic substrate 7.

Next, the ultrasonic oscillator 8g and the heater 300 of the ultrasonic bonding tool 8 are driven while the one semiconductor element 2 and the one electronic substrate 7 are sandwiched and pressed by the ultrasonic bonding tool 8 and the holding plate 9a. The ultrasonic bonding between the one semiconductor element 2 and the one electronic substrate 7 is performed while heating. The heater 300 may be started to be heated before coming into contact with the ultrasonic wave application region D1a of the wafer sheet 4.
By this ultrasonic bonding and heating operation, the metal bumps 2c on the electrodes 2a of the one semiconductor element 2 and the electrodes 7b of the one electronic substrate 7 are ultrasonically bonded, and heat separation is performed via the wafer sheet 4. The layer 3 is also heated, and the adhesive force between the one semiconductor element 2 and the thermal peeling layer 3 is weakened, and the thermosetting layer 5 is heated via the wafer sheet 4, the thermal peeling layer 3 and the semiconductor element 2, All the electrodes 2a of the one semiconductor element 2 pass through the thermosetting layer 5 and come into contact with the electrodes 7a of the electronic board 7, respectively. The semiconductor element 2 and the electronic substrate 7 are bonded with a force stronger than the adhesive force between the one semiconductor element 2 and the heat-release layer 3 after heating.

  Next, the driving of the motor 33M of the Z-axis table 33 of the ultrasonic bonding tool moving device 30a is controlled to raise the ultrasonic bonding tool 8 from the ultrasonic application position C1a to the ultrasonic application preparation position C2a and to transport the semiconductor element. The driving of the motor 24aM of the Z-axis table 24a of the apparatus 20a is controlled to raise the wafer sheet holder 1 from the semiconductor element bonding position A1a to the semiconductor element bonding preparation position A2a. As a result, the electronic substrate 7 that is sucked and held on the holding plate 9a of the suction stage 9 and to which the one semiconductor element 2 is bonded has a bonding force with the semiconductor element 2 and the heat release layer 3 after heating. Since it is stronger than the adhesive force, it moves away from the thermal release layer 3 (see FIG. 10D).

  Next, the driving of the motors 31M to 33M of the respective tables 31 to 33 of the ultrasonic bonding tool moving device 30a is controlled, and the driving of the respective motors 22aM to 24aM of the respective tables 22a to 24a of the semiconductor element transfer device 20a is controlled. The ultrasonic bonding tool 8 and the wafer sheet are controlled so that the electronic substrate transfer device 50a can transfer the electronic substrate 7 to which the one semiconductor element adsorbed and held on the holding plate 9a of the adsorption stage 9 is bonded. The holding body 1 is moved.

Next, the driving of the respective motors 52aM to 54aM and the driving of the suction device 56a of each of the tables 52a to 54a of the electronic substrate transport apparatus 50a is controlled, and one electron to be joined next by the suction nozzle 51a-2. While holding the substrate 7 by suction, the other suction nozzle 51a-1 sucks and holds the electronic substrate 7 to which the one semiconductor element 2 is bonded, or immediately before the suction holding. By controlling the driving of a suction device (not shown) of the suction stage 9, the suction by the suction stage 9 of the electronic substrate 7 to which the one semiconductor element 2 is bonded is released.
Next, the driving of the motor of the Z-axis table 9b of the suction stage 9 is controlled to lower the holding plate 9a from the electronic substrate holding position E1 to the electronic substrate holding preparation position E2, and the one semiconductor element 2 is bonded. The contact state between the electronic substrate 7 and the holding plate 9a is released. At this time, the state in which the electronic substrate 7 to which the one semiconductor element 2 is bonded is held by suction is maintained by the one suction nozzle 51a-1.
Next, the driving of the Z-axis rotation drive motor 55aM of the Z-axis 55a of the electronic substrate transport apparatus 50a is controlled to rotate the suction head 51a by 180 °, and is sucked and held by the other suction nozzle 51a-2 and the next bonding is performed. The target electronic substrate 7 is moved to the electronic substrate bonding position B1a (see FIG. 10E), and the electronic substrate 7 adsorbed and held by one suction nozzle 51a-1 and bonded to the semiconductor element 2 is moved. The electronic substrate is retracted from the bonding position B1a. At the same time, the driving of the motor (not shown) of the Z-axis table 9b of the suction stage 9 and the driving of the suction device (not shown) are controlled to move the holding plate 9a from the electronic substrate holding preparation position E2 to the electron. The electronic substrate 7 is moved up to the substrate holding position E1, and the electronic substrate 7 to be bonded next is attracted and held by the holding plate 9a at the electronic substrate bonding position B1a, and the suction device 56a of the electronic substrate transport apparatus 50a is driven. And the suction holding state of one electronic substrate 7 to be joined next by the suction nozzle 51a-2 is released.

Next, by controlling the driving of the electronic substrate transfer device 50a, the electronic substrate fixed to the electronic substrate transfer device 50a above the one electronic substrate 7 to be bonded and held on the suction stage 9 is next. By moving the recognizing device 60a, the electronic substrate recognizing device 60a recognizes a recognition target portion (not shown) of one electronic substrate 7 to be joined next, and the electronic substrate recognizing device 60a controls the control unit. The electronic board recognition data is output to 80. Thereafter, the suction head 51a of the electronic substrate transport apparatus 50a is moved toward the tray 42 while holding the electronic substrate 7 to which the one semiconductor element 2 is bonded by the suction nozzle 51a-2.
After the suction head 51a of the electronic substrate transfer device 50a moves toward the tray 42 or simultaneously with the movement, the wafer sheet is controlled by controlling the driving of the motors 22aM to 24aM of the respective tables 22a to 24a of the semiconductor element transfer device 20a. The holding body 1 is moved above the semiconductor element recognizing device 70a, and the semiconductor element recognizing device 70a is caused to recognize a recognition target portion (not shown) of one semiconductor element 2 to be a next bonding target. After outputting the semiconductor element recognition data, the next one semiconductor element 2 is positioned at the semiconductor element junction preparation position A2a.

  Next, the respective motors 52aM to 54aM of the respective tables 52a to 54a of the electronic substrate transport apparatus 50a until the one semiconductor element 2 is ultrasonically bonded to the one electronic substrate 7 to be joined next. The electronic substrate 7 to which the one semiconductor element 2 attracted and held by the suction nozzle 51a-1 is bonded is released from the suction holding state on the tray 42 by controlling the driving of the suction device 56a and the suction device 56a. And the suction nozzle 51a-1 sucks and holds one electronic substrate 7 that is the next bonding target of the tray 42, and holds the electronic substrate 7 that is the next bonding target in the vicinity of the bonding position B1a for the electronic substrate. Move it up.

Hereinafter, the semiconductor ultrasonic bonding apparatus according to the second embodiment of the present invention can obtain one electronic substrate 7 and one semiconductor element 2 after a plurality of bonding by performing the same operation as described above.
The operation when all of the many electronic substrates 7 placed on the tray 42 are ultrasonically bonded to the semiconductor element 2 and when the ultrasonic bonding of the plurality of semiconductor elements 2 of the wafer sheet holder 1 is completed. Since this is the same as the semiconductor ultrasonic bonding apparatus of the first embodiment, the description thereof is omitted.

  The semiconductor ultrasonic bonding apparatus according to the second embodiment of the present invention is transferred to the electronic substrate bonding position B1a with the electrode surface 7b of the electronic substrate 7 facing upward, and the wafer with the electrode surface 2b of the semiconductor element 2 facing downward. The metal bump 2c on the electrode 2a of the one semiconductor element 2 is held by the sheet holder 1 and conveyed to the semiconductor element bonding position A1a, and the ultrasonic bonding tool 8 is brought into contact with the semiconductor element 2 from above. The ultrasonic oscillator 8g is brought into contact with the corresponding electrode 7a of the electronic substrate 7 and the suction stage 9 is brought into contact with the back surface (lower surface) of the electronic substrate 7 while the semiconductor element 2 and the electronic substrate 7 are heated by the heater 300. By applying ultrasonic waves and performing ultrasonic bonding, the same effects as those of the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention can be obtained. That is, as in the apparatus of Conventional Example 2, the semiconductor element can be easily peeled off without locally applying stress to the semiconductor element with a needle or the like when peeling the semiconductor element from the adhesive sheet. The occurrence of breakage or chipping can be suppressed. In addition, since the one semiconductor element 2 is peeled off from the heat release layer 3 by using heat applied to the thermosetting layer 5 when the one semiconductor element 2 and the electronic substrate 7 are ultrasonically bonded. The time for joining the one semiconductor element 2 and the electronic substrate 7 can be greatly reduced as compared with the apparatus of the second conventional example.

Moreover, according to the semiconductor ultrasonic bonding apparatus of the second embodiment of the present invention, one operation before bonding is performed by two suction nozzles 51a-1 and 51a-2 by simply rotating the suction head 51a by 180 °. Since the electronic substrate 7 and one electronic substrate 7 after bonding can be adsorbed at the same time, one semiconductor element 2 per one electronic substrate 7 as in the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention. It is not necessary to move the suction head 51a in the ± Y direction each time the two are bonded, and the plurality of electronic substrates 7 and the plurality of semiconductor elements 2 can be bonded in a short time.
In the semiconductor ultrasonic bonding apparatus according to the second embodiment of the present invention, the electronic substrate 7 to be bonded is transferred from the tray 42 onto the suction stage 9 by the electronic substrate transfer device 50a, and the electronic substrate is transferred. However, the present invention is not limited to this. For example, the electronic substrate 7 to be joined may be positioned on the suction stage 9 by a transport device such as a conveyor.

As mentioned above, although embodiment of this invention has been described, this invention is not limited to each said embodiment, A various deformation | transformation is possible.
For example, as a first modification of the first and second embodiments of the present invention, in the semiconductor ultrasonic bonding apparatus of the first and second embodiments of the present invention, the one semiconductor element 2 is disposed on the electronic substrate 7. The suction heads 51 and 51a are moved in the vertical direction (± Z direction) every time they are joined, but the present invention is not limited to this. For example, in a state where the gap dimension between the wafer sheet 4 and the electronic substrate 7 of the wafer sheet holder 1 is maintained substantially constant (for example, 1 mm), the gap dimension between the wafer sheet 4 and the electronic substrate 7 is hardly changed (in other words, (For example, without raising or lowering one member relative to the other member so that the wafer sheet 4 and the electronic substrate 7 are relatively separated from each other) The operation may be controlled by the control unit 80 so as to continuously ultrasonically bond with the sonic bonding tool 8.

  In the case of operating as described above, depending on the direction of movement of the wafer sheet holder 1 or the electronic substrate 7, the semiconductor element 2 after being bonded to the electronic substrate 7 may have a pre-bonding state held by the wafer sheet holder 1. The semiconductor element 2 may come into contact. Therefore, when the control unit 80 is viewed from the semiconductor element 2 bonded to the tip of the plurality of adjacent semiconductor elements 2 held on the wafer sheet 4 of the wafer sheet holder 1, the semiconductor element to be bonded next. 2 and the joining position where the semiconductor element 2 is joined next, as seen from the joining position where the semiconductor element 2 is joined before joining the plurality of semiconductor elements 2 to the one electronic substrate 7. The plurality of semiconductor elements 2 may be ultrasonically bonded to the electronic substrate 7 so that the arrangement direction does not become 180 degrees (makes an angle of 0 degrees or more and smaller than 180 degrees).

An example of such a configuration will be described below.
Here, as shown in a perspective view seen from above in FIG. 11A, the wafer 2A may be in the ± y direction (may be the same direction as the ± Y direction or may be a completely different direction from the ± Y direction). 9 rows of nine semiconductor elements S11 to S13, S21 to S23, in three rows and three rows in the ± x direction (may be the same direction as the ± X direction or may be completely different from the ± X direction). It is assumed that the wafer sheet holder 1 is divided into S31 to S33. That is, in the wafer 2A of FIG. 11A, the semiconductor element S11 is arranged on the most upstream side in the + x direction and the most upstream side in the + y direction, and the semiconductor elements S11, S21, and S31 are arranged in the most upstream column in the + y direction. Are arranged in order from the upstream side in the + x direction toward the downstream side, and then, in the middle row between the upstream side and the downstream side in the + y direction, the semiconductor elements S12, S22, and S32 are arranged from the upstream side in the + x direction to the downstream side. Next, it is assumed that the semiconductor elements S13, S23, S33 are sequentially arranged from the upstream side to the downstream side in the + x direction on the most downstream side in the + y direction.

In the wafer 2A as described above, for example, as shown in FIGS. 11B and 11C, the semiconductor element bonding positions A1-1 to A1-3 are arranged in series from the upstream side to the downstream side in the + y direction. In this case, if the wafer sheet holder 1 is conveyed only in the + y direction, the semiconductor elements S11 to S13 can be ultrasonically bonded to the semiconductor element bonding positions A1-1 to A1-3 of the electronic substrate 7 in order.
In such a case, the operation is controlled by the control unit 80 as follows.
For example, first, as shown in FIG. 11D, the semiconductor element S11 located on the most upstream side in the + y direction of the wafer 2A is changed to the semiconductor element bonding position A1-1 located on the most upstream side in the + y direction of the electronic substrate 7. Ultrasonic bonding is performed as described above.
Next, as shown in FIG. 11E, the semiconductor element S12 located on the second upstream side in the + y direction of the wafer 2A is connected to the semiconductor element junction position A1- located on the second upstream side in the + y direction of the electronic substrate 7. 2 is ultrasonically bonded as described above.
Next, as shown in FIG. 11F, the semiconductor element S13 located on the most downstream side in the + y direction of the wafer 2A is described above as the semiconductor element bonding position A1-3 located on the most downstream side in the + y direction of the electronic substrate 7. So that ultrasonic bonding.
That is, the plurality of semiconductor elements 2 are arranged in the same direction as the transport direction of the electronic substrate 7 in order from the semiconductor element 2 located on the upstream side in the + y direction, which is a single transport direction of the wafer sheet holder 1, toward the downstream side. Operation control may be performed so that ultrasonic bonding is performed to the plurality of bonding positions in order from the bonding position located on the upstream side in the + y direction, which is the conveyance direction, among the plurality of bonding positions arranged in a row.

In other words, when viewed from the semiconductor element S11 that is ultrasonically bonded first among the plurality of adjacent semiconductor elements S11 to S13, the arrangement direction of the semiconductor element S12 to be bonded next (for example, the semiconductor elements S11 to S12 in FIG. 11A). And the semiconductor element bonding position A1-1 where the semiconductor element S11 is ultrasonically bonded before the semiconductor elements S11 and S12 are ultrasonically bonded to the one electronic substrate 7 in order. Next, the arrangement direction of the semiconductor element bonding position A1-2 for ultrasonic bonding of the semiconductor element S12 (for example, the semiconductor element bonding position A1-1 to the right direction of A1-2 on the electronic substrate 7 in FIG. 11C) is the same. It should be in the direction. In other words, first, the semiconductor element S12 is ultrasonically bonded to the semiconductor element bonding position A1-1, and then, for example, in order to ultrasonically bond the semiconductor element S11, a wafer sheet is held on a fixed electronic substrate 7, for example. When the body 1 is to be conveyed in the + y direction (right direction) of FIG. 11A, the semiconductor element S11 held by the wafer sheet holder 1 is ultrasonically bonded to the semiconductor element bonding position A1-1. It is necessary to avoid such an ultrasonic bonding operation.
In order to avoid contact between the semiconductor element previously ultrasonically bonded and the semiconductor element held on the wafer sheet holder 1, as described with reference to FIGS. As shown in FIGS. 12A to 12D as a second modified example of the first and second embodiments of the present invention, the semiconductor element 2 is not limited to the same arrangement direction of the element bonding positions. The arrangement direction and the arrangement direction of the semiconductor element bonding positions may form a predetermined angle.

That is, for example, in the case of using the wafer 2A of FIG. 11A, as shown in FIG. 12A, the semiconductor element bonding positions are not arranged in a line, but the semiconductor element bonding positions A1-4, A1. −5 is linearly arranged from the upstream side to the downstream side in the + x direction, and the semiconductor element junction position A1-6 extends in the + y direction from the intermediate position between the semiconductor element junction positions A1-4 and A1-5. Suppose that they are located farther downstream.
In order to shorten the ultrasonic bonding operation time in such a case, first, the wafer sheet holder 1 is conveyed in the + x direction, and the semiconductor elements 2 are respectively mounted at the semiconductor element bonding positions A1-4 and A1-5. After ultrasonic bonding, the semiconductor element 2 may be ultrasonically bonded at the semiconductor element bonding position A1-6 by being conveyed in the + x direction and the + y direction.
More specifically, as shown in FIG. 12B, the semiconductor element S11 located on the most upstream side in the + x direction and the most upstream side in the + y direction in the wafer 2A in FIG. As described above, ultrasonic bonding is performed to the semiconductor element bonding position A1-4 that is positioned on the side and on the most upstream side in the + y direction.
Next, as shown in FIG. 12C, in the wafer 2A of FIG. 11A, the semiconductor element S21 located at the second upstream side in the + x direction and the most upstream side in the + y direction is the second upstream side of the electronic substrate 7 in the + x direction. The ultrasonic bonding is performed at the bonding position A1-5 for the semiconductor element located on the uppermost side in the + y direction.
Next, as shown in FIG. 12D, the semiconductor element S31 located on the most downstream side in the + x direction and the most upstream side in the + y direction in the wafer 2A in FIG. 11A is located on the most downstream side in the + y direction of the electronic substrate 7. Ultrasonic bonding is performed at the semiconductor element bonding position A1-6.
That is, the arrangement direction of semiconductor elements S11, S21, and S31 (downward direction in FIGS. 12B to 12D) of the wafer sheet holder 1 and the arrangement direction of the bonding position of the electronic substrate 7 (bonding position A1-4 and bonding position A1- 5 is the same as the downward direction of FIGS. 12B to 12D, and the arrangement direction at the joining position A1-5 and the joining position A1-6 is the same and a predetermined angle as shown in FIGS. 12B to 12D. It is arranged to make.
Therefore, if the arrangement direction of the semiconductor elements 2 and the arrangement direction of the junction positions for the semiconductor elements are directions other than the reverse direction (the direction in which the phase is different by 180 degrees), that is, an angle of 0 degree or more and less than 180 degrees. If it makes it, it can avoid that the semiconductor element 2 hold | maintained at the wafer sheet holding body 1 contacts the semiconductor element 2 ultrasonically joined to the joining position for semiconductor elements.
If only one semiconductor element 2 is bonded to one electronic substrate 7, there is no fear that the semiconductor element 2 to be bonded next will contact the semiconductor element 2 after bonding. 80 controls can be simplified.

As described above, in one electronic substrate 7, the relationship between the position where the semiconductor element 2 is first bonded and the position where the semiconductor element 2 is next bonded, and the position where the semiconductor sheet 2 is bonded, which is held by the wafer sheet holder 1, is bonded first. From the relationship between the position of the semiconductor element 2 to be bonded and the semiconductor element 2 to be bonded next, when the plurality of semiconductor elements 2 are ultrasonically bonded to the one electronic substrate 7, the wafer is held by the wafer sheet holder 1 and the 1 The ultrasonic bonding is repeated by controlling the control unit 80 so that the semiconductor element 2 not bonded to one electronic substrate 7 and the semiconductor element 2 already bonded to the one electronic substrate 7 do not come into contact with each other. To go.
In other words, when a plurality of semiconductor elements 2 held by the wafer sheet holder 1 are ultrasonically bonded to the one electronic substrate 7, the semiconductors remaining on the wafer sheet 4 other than the semiconductor elements 2 to be bonded. Ultrasonic bonding is performed so that the element 2 and the semiconductor element 2 already bonded to the one electronic substrate are not in an interference relationship. In this way, a plurality of semiconductor elements 2 can be ultrasonically bonded to the one electronic substrate 7.

  On the other hand, as a third modification of the first and second embodiments of the present invention, some of the semiconductor elements 2 held by the wafer sheet holder 1 should not be ultrasonically bonded due to manufacturing defects or the like. A semiconductor element (hereinafter referred to as a defective semiconductor element) S100 may be included. Which semiconductor element 2 of the wafer sheet holder 1 is the defective semiconductor element S100 is generally determined by, for example, detection information of a defective semiconductor element generated by a semiconductor manufacturing apparatus that manufactured the semiconductor element 2 or other inspections. Detection information of a defective semiconductor element detected by an apparatus or the like and stored in a host computer or the like is sent in advance to the control unit 80 as data (hereinafter referred to as wafer mapping data) and stored in the storage unit 81. It is shown in the form of attaching a defect mark directly on 2.

Therefore, for example, as shown in FIG. 13, the disposal box 90 of the defective semiconductor element S100 is further moved (for example, below the semiconductor element transport path (between the transportable position 10A and the joining position A1) by the semiconductor element transport apparatus 20). The controller 80 is configured to control each device so that the defective semiconductor element S100 is placed in the disposal box 90 based on the wafer mapping data or the defect mark recognized by the semiconductor element recognition device 70. Is preferred.
That is, when the semiconductor element 2 to be ultrasonically bonded next is the defective semiconductor element S100, the control unit 80 moves the wafer sheet holder 1 to the disposal position where the defective semiconductor element S100 is located above the disposal box 90. The ultrasonic wave is applied while heating from the back surface of the defective semiconductor element S100 with the ultrasonic bonding tool 8, and the back surface of the defective semiconductor element S100 and the heat release adhesive layer 3a of the heat release layer 3 of the wafer sheet 4 are connected. It is preferable that each device is controlled so that the defective semiconductor element S100 is detached from the thermal peeling layer 3 of the wafer sheet 4 and placed in the disposal box 90 by weakening the adhesive force therebetween. With this configuration, even when the defective semiconductor element S100 is included in the plurality of semiconductor elements 2 held by the wafer sheet holder 1, the defective semiconductor element S100 is ultrasonically bonded to the electronic substrate 7. And can be disposed of easily and reliably. In this discarding operation, only the defective semiconductor element S100 may be discarded in advance before starting the ultrasonic bonding operation.

As a fourth modification of the first and second embodiments of the present invention, in the semiconductor ultrasonic bonding apparatus of the first or second embodiment of the present invention, the thermosetting layer 5 is used as an example of the semiconductor element 2. Reference is also made to pre-coating and forming on the electrode surface 2b or the electrode surface 7b of the electronic substrate 7, and this coating formation will be described in detail below.
For example, as shown in FIGS. 14A to 14F, a thermosetting adhesive injector 91 that separately stores and holds the thermosetting adhesive 5a is separately provided, and each thermosetting adhesive injector 91 is moved in the XYZ directions by an XYZ axis table or the like. Is configured to be movable. Then, immediately before the semiconductor element 2 and the electronic substrate 7 are ultrasonically bonded, the thermosetting adhesive 5a is applied on the electrode surface 7b of the electronic substrate 7 (or on the electrode surface 2b of the semiconductor element 2) by the thermosetting adhesive injector 91. ) To form the thermosetting layer 5. In this case, before applying the thermosetting adhesive 5a to the electronic substrate 7, if the temperature of the thermosetting adhesive 5a is raised to near the heating set temperature of the ultrasonic bonding tool 8 in advance, the semiconductor element 2 and the electron At the time of ultrasonic bonding with the substrate 7, the heating time required to melt the thermosetting adhesive 5a can be shortened. Therefore, the time required for ultrasonic bonding the plurality of semiconductor elements 2 to one or a plurality of electronic substrates 7 can be shortened.

  Further, in the semiconductor ultrasonic bonding apparatus according to the first or second embodiment of the present invention, the ultrasonic bonding tool 8 is brought into contact with the ultrasonic wave application region D1 of the wafer sheet 4 corresponding to the back surface side of the semiconductor element 2, and the semiconductor Although heat and ultrasonic waves are applied from the back side of the element 2, the present invention is not limited to this. For example, the same effect can be obtained even when heat and ultrasonic waves are applied from the back surface side of the electronic substrate 7 or from both the back surface side of the semiconductor element 2 and the back surface side of the electronic substrate 7.

  In addition, by appropriately combining arbitrary embodiments among the above-described embodiments, the respective effects can be achieved.

  The semiconductor ultrasonic bonding method and apparatus of the present invention can suppress the occurrence of damage or chipping of a semiconductor element even when a low dielectric constant material is used for the wafer or the thickness of the wafer is reduced. The present invention is useful for a semiconductor ultrasonic bonding method and apparatus for ultrasonic bonding an electronic substrate with electrodes and a semiconductor element with electrodes and metal bumps.

The perspective view of the wafer sheet holding body which shows the state by which the wafer divided | segmented into each semiconductor element is hold | maintained at the wafer sheet holding body of the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. The expanded perspective view of one semiconductor element hold | maintained in the wafer sheet holding body of the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. The expanded sectional view of the electrode and metal bump of one semiconductor element hold | maintained in the wafer sheet holding body of the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention 1 is a schematic cross-sectional view of a wafer sheet holder showing a state in which a semiconductor element is held in a wafer sheet holder of a semiconductor ultrasonic bonding apparatus according to a first embodiment of the present invention. In the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention, a process in which a wafer before being divided into individual semiconductor elements is held by a wafer sheet that is a part of a wafer sheet holder is described. Schematic explanatory diagram for Schematic explanatory drawing for demonstrating the process by which a thermosetting layer is arrange | positioned on the upper surface of a wafer in FIG. 2A in the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. In the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention, a schematic explanatory view for explaining a process of dividing a wafer into individual semiconductor elements, following FIG. 2B. In the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention, a schematic explanatory view for explaining a state in which the wafer is divided into individual semiconductor elements, following FIG. 2C. In the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention, subsequent to FIG. 2D, a process in which a wafer obtained by dividing a wafer into individual semiconductor elements is held by a wafer sheet holder is described. Schematic illustration of 1 is a schematic view showing a state in which a plurality of semiconductor elements are ultrasonically bonded to one substrate in the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention. 1 is a schematic view showing a state in which one semiconductor element is ultrasonically bonded to one electronic substrate in the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention. Partial enlarged view of the electrode joint portion of FIG. 3A or 3B The perspective view which shows the modification of the ultrasonic bonding tool of the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. Sectional drawing which shows the modification of the ultrasonic bonding tool of the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention of FIG. 4A. The perspective view which shows the whole structure of the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. Schematic explanatory drawing seen from the side of the semiconductor ultrasonic bonding apparatus according to the first embodiment of the present invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 1st Embodiment of this invention. The perspective view which shows the whole structure of the semiconductor ultrasonic bonding apparatus concerning 2nd Embodiment of this invention. Schematic explanatory drawing seen from the side of the semiconductor ultrasonic bonding apparatus according to the second embodiment of the present invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 2nd Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 2nd Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 2nd Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 2nd Embodiment of this invention. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning 2nd Embodiment of this invention. FIG. 7 is a perspective explanatory view of a wafer sheet holder that holds a plurality of semiconductor elements in the semiconductor ultrasonic bonding apparatus according to the first and second modifications of the first and second embodiments of the present invention. The schematic plan view which shows the joining position for semiconductor elements in the semiconductor ultrasonic joining apparatus concerning the said 1st modification. The schematic side view which shows the joining position for semiconductor elements in the semiconductor ultrasonic joining apparatus concerning the said 1st modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning this said 1st modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning the said 1st modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning the said 1st modification. The schematic plan view which shows the joining position for semiconductor elements in the semiconductor ultrasonic joining apparatus concerning the said 2nd modification. FIG. 7 is a perspective explanatory view showing an ultrasonic bonding operation by the semiconductor ultrasonic bonding apparatus according to the second modification. FIG. 7 is a perspective explanatory view showing an ultrasonic bonding operation by the semiconductor ultrasonic bonding apparatus according to the second modification. FIG. 7 is a perspective explanatory view showing an ultrasonic bonding operation by the semiconductor ultrasonic bonding apparatus according to the second modification. Schematic explanatory drawing which shows the discard operation | movement of a defective semiconductor element in the semiconductor ultrasonic bonding apparatus concerning the said 3rd modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning the said 4th modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning the said 4th modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning the said 4th modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning the said 4th modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning the said 4th modification. Schematic explanatory drawing which shows the ultrasonic bonding operation | movement by the semiconductor ultrasonic bonding apparatus concerning the said 4th modification. Schematic for demonstrating operation | movement of the semiconductor ultrasonic bonding apparatus of the prior art example 1. FIG. The other schematic for demonstrating operation | movement of the semiconductor ultrasonic bonding apparatus of the prior art example 1 or 2 Schematic for demonstrating operation | movement of the semiconductor ultrasonic bonding apparatus of the prior art example 2.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafer sheet holding body 2 Semiconductor element 2A Wafer 3 Thermal peeling layer 4 Wafer sheet 5 Thermosetting layer 6 Dicer 7 Electronic substrate 8 Ultrasonic bonding tool 8a Ultrasonic application part 8b Cooling block 8c Ultrasonic application surface 8d Suction hole 8e Suction device 8f Ultrasonic horn 8g Ultrasonic oscillator 8h Pressurization mechanism 9 Suction stage 10 Semiconductor element supply device 11 Semiconductor element storage portion 12 Upper and lower lifter 13 Screw shaft 14 Driving motor 20 Semiconductor element transport device 21 Holding frame 31, 52 X-axis table 32 , 47, 53 Y-axis table 33, 54 Z-axis table 30 Ultrasonic bonding tool moving device 40 Electronic substrate supply device 41 Electronic substrate storage unit 42 Tray 45 Tray transport device 46 Holding base 50 Electronic substrate transport device 51 Suction head 55 θ axis 60 Electronic substrate recognition device 70 Semiconductor element recognition device 80 Control unit 81 Storage unit 90 Disposal box 91 Thermosetting adhesive injector

Claims (20)

A semiconductor ultrasonic bonding method for ultrasonic bonding an electronic substrate with an electrode and a semiconductor element with an electrode and a metal bump,
The back surface of the wafer, which is divided into individual semiconductor elements and in which metal bumps are formed on the electrodes on the front surface of each semiconductor element, and the wafer sheet of the wafer sheet holder are bonded together by a heat release layer, and the wafer is bonded to the wafer sheet. In a state of being held by a holder, the bumps of one of the semiconductor elements of the wafer and the electrodes of the electronic substrate corresponding to the bumps of the one semiconductor element are positioned to face each other.
In a state where the wafer is held on the wafer sheet holder, the one semiconductor element and the electronic substrate are heated while contacting the bump of the one semiconductor element of the wafer and the electrode of the electronic substrate. While applying ultrasonic waves to ultrasonically bond the bumps of the one semiconductor element and the corresponding electrodes of the electronic substrate, the adhesive force of the thermal peeling layer is weakened by the heating. A semiconductor ultrasonic bonding method, wherein the one semiconductor element bonded to the electronic substrate is detached from the wafer sheet.   When ultrasonically bonding the one semiconductor element and the electronic substrate, the electrode is disposed between the electrode surface of the one semiconductor element on which the electrode is formed and the electrode surface of the electronic substrate on which the electrode is formed. The semiconductor ultrasonic bonding method according to claim 1, wherein the thermosetting layer is thermally cured by the heating to bond the one semiconductor element and the electronic substrate.   Simultaneously with the ultrasonic bonding, by the heating, the adhesive force of the thermal peeling layer composed of one of a thermal peeling sheet, a thermal peeling film or a thermal peeling adhesive is weakened to the electronic substrate. The semiconductor ultrasonic bonding method according to claim 1, wherein the bonded semiconductor element is detached from the wafer sheet. Before positioning the electrodes of the electronic substrate corresponding to the bumps of the one semiconductor element so as to face each other, a non-conductive paste is applied to the electrode surface on which the electrodes of the one semiconductor element are formed. Forming a hardened layer,
After the positioning,
The semiconductor ultrasonic bonding method according to claim 1, wherein the thermosetting layer is thermoset by the heating simultaneously with the ultrasonic bonding.   The semiconductor ultrasonic bonding method according to claim 1, wherein the heating is performed from a back surface side of the one semiconductor element during the ultrasonic bonding.   The semiconductor ultrasonic bonding method according to claim 1, wherein the heating is performed from the back side of the electronic substrate during the ultrasonic bonding.   The semiconductor ultrasonic bonding method according to claim 1, wherein the ultrasonic wave is applied from a back surface side of the semiconductor element toward the electronic substrate during the ultrasonic bonding.   The semiconductor ultrasonic bonding method according to claim 1, wherein the ultrasonic wave is applied from the back surface side of the electronic substrate toward the one semiconductor element during the ultrasonic bonding. .   When bonding the plurality of semiconductor elements to the electronic substrate, a semiconductor element that is held on the wafer sheet of the wafer sheet holder and is not bonded to the electronic substrate, and a semiconductor element that is already bonded to the electronic substrate The semiconductor ultrasonic bonding method according to claim 1, wherein bonding is performed so as not to cause an interference relationship.   The defective semiconductor element in the plurality of semiconductor elements is transported to a defective semiconductor element discarding position, and then the heat release layer corresponding to the defective semiconductor element is heated to remove the defective semiconductor element from the wafer sheet. The semiconductor ultrasonic bonding method according to claim 1, wherein the method is separated from the semiconductor ultrasonic bonding method.   11. When ultrasonic bonding the semiconductor element to the electronic substrate, only one semiconductor element is ultrasonic bonded to one electronic substrate. Semiconductor ultrasonic bonding method. A semiconductor ultrasonic bonding apparatus for ultrasonic bonding an electronic substrate with an electrode and a semiconductor element with an electrode and a metal bump,
A wafer sheet, and a heat release layer for bonding the wafer sheet and the back surface of the wafer, which is divided into individual semiconductor elements and in which metal bumps are formed on the electrodes on the surface of each semiconductor element, A wafer sheet holder that can be adhered and held on the wafer sheet via the thermal release layer;
With the wafer held by the wafer sheet holder, the bumps of one of the semiconductor elements of the wafer sheet, and the electrodes of the electronic substrate corresponding to the bumps of the one semiconductor element, Are positioned so that the bumps of the one semiconductor element of the wafer are in contact with the electrodes of the electronic substrate, and the ultrasonic wave is heated while heating the one semiconductor element and the electronic substrate. And simultaneously applying ultrasonic bonding between the bumps of the one semiconductor element and the corresponding electrodes of the electronic substrate, the adhesive force of the thermal peeling layer is weakened by the heating, and applied to the electronic substrate. An ultrasonic bonding part for separating the bonded semiconductor element from the wafer sheet;
A semiconductor ultrasonic bonding apparatus comprising:   In the wafer sheet holder, a thermosetting layer is disposed on the wafer held by the wafer sheet holder to bond the one semiconductor element and the electronic substrate in an electrode bonded state by thermosetting by heating. The semiconductor ultrasonic bonding apparatus according to claim 12, wherein the wafer is bonded and held to the wafer sheet through the thermal release layer in a state. An electronic substrate recognition device that recognizes a recognition target portion of the electronic substrate and outputs electronic substrate recognition data before the positioning by the ultrasonic bonding portion;
A semiconductor element recognition device for recognizing a recognition target portion of the one semiconductor element and outputting semiconductor element recognition data before joining the one semiconductor element and the electronic substrate;
Further comprising
The ultrasonic bonding part is
The electrode surface on which the electrode of the one semiconductor element of the wafer held on the wafer sheet holding body is disposed in a state of being opposed to the electrode surface on which the electrode of the electronic substrate is formed. A semiconductor element transport device that transports a wafer sheet holder and positions the one semiconductor element of the wafer held by the wafer sheet holder at a bonding position for semiconductor elements;
Opposite to the wafer sheet, which is transferred by the semiconductor element transfer device and bonded to the one semiconductor element of the wafer of the wafer sheet holding body located at the bonding position for the semiconductor element through the thermal release layer. And an ultrasonic bonding tool capable of applying the ultrasonic wave in contact with the ultrasonic wave application region of the wafer sheet corresponding to the back surface of the one semiconductor element, and the bonding for the semiconductor element transferred by the semiconductor element transfer device An ultrasonic bonding tool moving device that moves the ultrasonic bonding tool to be in contact with the ultrasonic wave application region of the wafer sheet of the wafer sheet holding body, which is located at a position;
The electronic substrate before bonding is positioned at the semiconductor element bonding position in a state where the electrode surface of the electronic substrate before bonding is disposed so as to face the electrode surface of the one semiconductor element. An electronic substrate transport device that transports the semiconductor substrate to an electronic substrate bonding position facing the electrode surface, and positions the electrode of the electronic substrate on the bump of the one semiconductor element at the electronic substrate bonding position;
Contacting at least one of the ultrasonic wave application area of the wafer sheet of the wafer sheet holding member positioned at the bonding position for the semiconductor element or the electronic substrate before bonding positioned at the bonding position for the electronic substrate. A heating device capable of heating the thermal release layer corresponding to the one semiconductor element;
The semiconductor element transfer device, the ultrasonic bonding tool, the ultrasonic bonding tool moving device, the electronic substrate transfer device, the heating device, the electronic substrate recognition device, and the semiconductor element recognition device are connected to perform respective operations. By controlling, the wafer sheet holding body is transferred to the semiconductor element bonding position by the semiconductor element transfer apparatus, and the ultrasonic wave application of the wafer sheet of the wafer sheet holding body positioned at the semiconductor element bonding position is performed. The semiconductor element recognition data output by the semiconductor element recognition device by bringing the ultrasonic bonding tool into contact with the region and conveying the electronic substrate before bonding to the electronic substrate bonding position by the electronic substrate transfer device. And the electronic substrate recognition data output by the electronic substrate recognition device. The one semiconductor element and the electronic substrate are positioned by the semiconductor element transfer device and the electronic substrate transfer device so that the electrode of the electronic substrate is bonded to the bump of the first substrate. A controller that controls the ultrasonic bonding by applying the ultrasonic wave by the ultrasonic bonding tool while heating the substrate by the heating device;
The semiconductor ultrasonic bonding apparatus according to claim 12 or 13, characterized by comprising:   The electronic substrate transfer device is a thermosetting in which the one semiconductor element and the electronic substrate are bonded in an electrode-bonded state by thermosetting by heating before bonding the electronic substrate to the electrode surface of the electronic substrate. The semiconductor ultrasonic bonding apparatus according to claim 12 or 14, wherein the electronic substrate before bonding is transported to the bonding position for the electronic substrate in a state where the layer is disposed on the electronic substrate. The electronic substrate is supplied in a state where the thermosetting layer is disposed on the electrode surface of the electronic substrate before bonding and the electrode surface of the electronic substrate is disposed so as to be opposed to the electrode surface of the one semiconductor element. An electronic board supply device that can be stored is further provided,
The electronic substrate transport device transports the electronic substrate housed in the electronic substrate supply device to the electronic substrate bonding position, and the bumps of the one semiconductor element and the electronic substrate at the electronic substrate bonding position The semiconductor ultrasonic bonding apparatus according to claim 15, wherein the electrode is positioned through the thermosetting layer.   The apparatus further comprises a coating device that forms and arranges the thermosetting layer by applying a thermosetting adhesive to the electrode surface of the electronic substrate before bonding the one semiconductor element to the electronic substrate. The semiconductor ultrasonic bonding apparatus according to claim 15.   The ultrasonic bonding portion is an array direction of semiconductor elements to be bonded next, as viewed from the semiconductor element bonded first among the plurality of adjacent semiconductor elements held on the wafer sheet of the wafer sheet holding body. An angle smaller than 180 degrees with respect to a bonding position where the semiconductor element is bonded next, as viewed from a bonding position where the semiconductor element is bonded first when bonding the plurality of semiconductor elements to the one electronic substrate The semiconductor ultrasonic bonding apparatus according to claim 12, wherein the plurality of semiconductor elements are bonded to an electronic substrate so as to form the following.   The ultrasonic bonding portion transports the defective semiconductor element among the plurality of semiconductor elements to a defective semiconductor disposal position, and then heats the thermal separation layer corresponding to the defective semiconductor element to perform the defective semiconductor element. The semiconductor ultrasonic bonding apparatus according to claim 12, wherein an element is detached from the wafer sheet. The control unit ultrasonically bonds the one semiconductor element to the electronic substrate, then retracts the electronic substrate after bonding from the bonding position for the electronic substrate by the electronic substrate transfer device, and then bonds the electronic substrate The substrate is transferred to the electronic substrate bonding position, and the semiconductor element to be bonded next by the semiconductor element transfer device is transferred to the semiconductor element bonding position and bonded to the next electronic substrate to be bonded next. The semiconductor ultrasonic bonding apparatus according to claim 14, wherein the semiconductor ultrasonic bonding apparatus is controlled to ultrasonically bond the semiconductor element.

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