JP2007288122A - Active matrix substrate, manufacturing method thereof, electro-optical device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an active matrix substrate capable of eliminating the necessity of formation of a metal film for mask in laser annealing after formation of a semiconductor film, and to provide the active matrix substrate, an electro-optical device and electronic equipment. <P>SOLUTION: (a) A light-shielding film 49 containing metal is formed and patterned on a substrate 10. Then, (b) an silicon oxide film 41 and (c) amorphous silicon film 42A are laminated so as to cover the light-shielding film 49. Then, the amorphous silicon film 42A is crystallized by irradiating (d) the substrate 10 with a laser beam, and a polycrystalline silicon film 42P having high mobility is formed. In this case, since the light-shielding film 49 works as a mask, the amorphous silicon film 42A is not crystallized but remains in a region where the light-shielding film 49 is formed. The amorphous silicon film 42A and the polycrystalline silicon film 42P having different mobility which are obtained in this way are each used as a semiconductor film of TFT in the pixel region 5 and the driving circuit 6. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an active matrix substrate manufacturing method, an active matrix substrate, an electro-optical device, and an electronic apparatus in which a load circuit that performs load switching operation and a drive circuit that controls driving of the load are formed on the same surface.

  In various electronic devices such as a liquid crystal display device having a plurality of pixels arranged in a matrix, an organic EL display device, and an image sensor, a large number of semiconductor devices (such as TFTs; hereinafter referred to as TFTs) that perform pixel (load) switching operations In general, an active matrix substrate on which a pixel circuit including the above is formed is used. In addition to the pixel circuit, a driving circuit including a large number of TFTs that control driving of each pixel is formed on such a substrate.

  Here, if a TFT with high carrier mobility (hereinafter simply referred to as mobility) is used for the TFT semiconductor film of the drive circuit to improve the performance of the TFT, the drive circuit can be operated at high speed. On the other hand, if the mobility of the semiconductor film of the TFT included in the pixel circuit is increased too much, there is a problem that the leakage current of the TFT generated when the pixel circuit is irradiated with light increases. When light is incident on the semiconductor film of the TFT of the pixel circuit, electron-hole pairs are generated in the semiconductor film and a leak current flows through the TFT. At this time, if the mobility of the semiconductor film is high, the leak current increases. It is. Such a phenomenon is conspicuous in a transmissive liquid crystal display device configured to transmit light through a pixel region. When the leakage current increases in the TFT of the pixel circuit of the transmissive liquid crystal display device, display unevenness or the like occurs, and the display quality deteriorates.

  In order to avoid such a phenomenon, the mobility of only the semiconductor film of the TFT of the drive circuit is increased with respect to the semiconductor film of the TFT of the pixel circuit. As a technology for increasing the mobility of a part of a semiconductor film formed on the same substrate, a laser annealing apparatus is used to irradiate only the semiconductor film in a region where the mobility is desired to be polycrystalline. A technique for forming a semiconductor film is known (see, for example, Patent Document 1). Furthermore, in order to selectively irradiate laser light in this manner, a method is known in which a mask is formed by forming a metal film on a portion of the substrate surface that is not irradiated with laser light.

JP-A-5-63172

  However, when laser light is masked with a metal film, it is necessary to form the metal film after the formation of the semiconductor film, and the metal film must be peeled after irradiation with the laser light. There is a problem that it becomes longer and costs increase. Further, since the semiconductor film is damaged by the formation and peeling of the metal film, there is a problem that it is difficult to form a high-quality semiconductor film.

  In view of the above problems, an object of the present invention is to provide an active matrix substrate manufacturing method, an active matrix substrate, an electro-optical device, and a method for forming a metal film for a mask for laser annealing after forming a semiconductor film. To provide electronic equipment.

  In order to solve the above problems, an active matrix substrate of the present invention is a method for manufacturing an active matrix substrate in which a load circuit that performs load switching operation and a drive circuit that controls driving of the load are formed on the same plane. And including at least a region where a switching element included in the load circuit is formed in a region where the load circuit is formed on a substrate having translucency, and a region where the driving circuit is formed A step of forming an island-shaped light-shielding film containing a metal in a region, a step of forming an insulating film on the substrate so as to cover the light-shielding film, and a step of forming a silicon film on the insulating film; Forming a polycrystalline silicon film by irradiating the silicon film with laser light from the side opposite to the side on which the light-shielding film is formed of the substrate to crystallize the silicon film. .

  According to such a manufacturing method, in the step of irradiating the laser beam, the laser beam reaches the silicon film in the region where the drive circuit is formed, and is crystallized to become a polycrystalline silicon film having high mobility. . On the other hand, laser light does not reach the silicon film formed in the region where the switching element of the load circuit is formed. This is because the laser light is shielded by the light shielding film formed in the region. As a result, a silicon film having a lower mobility than the polycrystalline silicon film remains in the region where the switching element of the load circuit is formed. Therefore, only the semiconductor film in the region where the driver circuit is formed can be made higher in mobility than the semiconductor film in the region where the load circuit is formed.

  Further, according to the above manufacturing method, it is not necessary to form and peel off a light-shielding film such as a metal film for a mask during laser annealing after the silicon film is formed, so that the process can be simplified. In addition, since there is no metal film formation step and no peeling step after the silicon film is formed, the semiconductor film is hardly damaged, and a high-quality active matrix substrate can be manufactured.

  The active matrix substrate of the present invention is manufactured by the above-described method for manufacturing an active matrix substrate. According to such a configuration, the semiconductor film of the TFT of the load circuit has a low mobility with respect to the semiconductor film of the TFT of the drive circuit, so that an active matrix substrate in which leakage current due to light hardly occurs can be obtained. Further, the light shielding film disposed in the region where the switching element is formed can prevent external light that causes a leakage current from entering the switching element.

  An electro-optical device according to the present invention includes the active matrix substrate, a counter substrate disposed to face the active matrix substrate, and a liquid crystal sandwiched between the active matrix substrate and the counter substrate. To do. Since the electro-optical device having such a configuration includes an active matrix substrate in which leakage current due to light is unlikely to occur, high-quality display can be performed.

  According to another aspect of the present invention, there is provided an electronic apparatus including the above electro-optical device. The electro-optical device having such a configuration can perform high-quality display using the electro-optical device.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings shown below, the dimensions and ratios of the components are appropriately different from the actual ones in order to make the components large enough to be recognized on the drawings.

<A. Liquid crystal display>
First, the liquid crystal display device 1 as an “electro-optical device” of the present invention will be described with reference to FIGS. 1 to 3. FIG. 1 is a plan view of the liquid crystal display device 1, and FIG. 2 is a cross-sectional view of the liquid crystal display device 1 taken along line AA in FIG. FIG. 3 is a circuit diagram showing a part of the pixel circuit formed in the pixel region 5 of the liquid crystal display device 1. Here, “pixel” and “pixel circuit” correspond to “load” and “load circuit” in the present invention, respectively. The pixel region 5 corresponds to “a region where a load circuit is formed” in the present invention.

  As shown in FIGS. 1 and 2, the liquid crystal display device 1 includes an element substrate 11 and a counter substrate 21 that are bonded together via a seal material 51, and a liquid crystal 50 is interposed between the element substrate 11 and the counter substrate 21. Is enclosed. The liquid crystal 50 is injected from the liquid crystal injection port 53. The liquid crystal injection port 53 is sealed with a sealing material 52 after the injection of the liquid crystal 50 is completed. The element substrate 11 corresponds to an “active matrix substrate” of the present invention.

  A TFT 305, a pixel electrode 37, a data line 34, a scanning line 36, and the like constituting the pixel are formed in a region corresponding to the pixel region 5 in the surface of the element substrate 11 facing the counter substrate 21 (FIG. 3). Reference), a counter electrode (not shown) is formed on the entire surface of the counter substrate 21 facing the element substrate 11. In addition, a data line driving circuit 61 and a scanning line driving circuit 62 including a large number of TFTs 306 (see FIG. 6E) are formed on the element substrate 11. The data line driving circuit 61 supplies an image signal to the data line 34, and the scanning line driving circuit 62 supplies a scanning signal to the scanning line 36. Here, the TFT 305 corresponds to a “switching element” in the present invention. The data line driving circuit 61 and the scanning line driving circuit 62 correspond to the “driving circuit” in the present invention. The region where the data line driving circuit 61 and the scanning line driving circuit 62 are formed is hereinafter also referred to as “driving circuit region 6”.

  Here, a detailed configuration of the TFTs 305 and 306 will be described with reference to a cross-sectional view of FIG. As shown in this figure, a TFT 305 is formed on a transparent substrate 10 made of quartz, a light shielding film 49 containing metal, a silicon oxide film 41, a polycrystalline silicon film 42Q as a semiconductor film, a thermal oxide film 45, a silicon oxide film. 46, a gate electrode 47, and a silicon oxide film 48 are laminated in this order. The source electrode 31 and the drain electrode 33 are connected to the polycrystalline silicon film 42Q, and the terminal electrode 32 is connected to the gate electrode 47. Here, since the light shielding film 49 is formed on the substrate 10 in a region substantially corresponding to the polycrystalline silicon film 42Q, it prevents external light incident from the substrate 10 side from reaching the polycrystalline silicon film 42Q. Can do. Thereby, generation | occurrence | production of the leakage current by the light in TFT305 can be suppressed. The polycrystalline silicon film 42Q is desirably formed inside the light shielding film 49 when viewed from the direction perpendicular to the substrate 10.

  On the other hand, the TFT 306 is different from the TFT 305 in that it does not have the light shielding film 49 and that the polycrystalline silicon film 42P is used as a semiconductor film. Here, the polycrystalline silicon film 42P is a silicon film crystallized by laser annealing, and is a silicon film having a relatively higher mobility than the polycrystalline silicon film 42Q included in the TFT 305.

  Next, an outline of the pixel circuit will be described with reference to FIG. As shown in this figure, in the pixel region 5, a plurality of scanning lines 36 and a plurality of data lines 34 are wired so as to intersect with each other, and a pixel electrode 37 is formed in a region partitioned by the scanning lines 36 and the data lines 34. Are arranged in a matrix. A TFT 305 as a “switching element” of the present invention is provided corresponding to each intersection of the scanning line 36 and the data line 34, and a pixel electrode 37 is connected to the TFT 305.

  The TFT 305 is turned on by an on signal of the scanning line 36, and at this time, the image signal supplied to the data line 34 is supplied to the pixel electrode 37. Further, a storage capacitor 35 is provided in parallel with the pixel electrode 37, whereby the potential of the pixel electrode 37 is held for a time longer than the time when the image signal is applied. The storage capacitor 35 is connected to the capacitor electrode 39. The capacitor electrode 39 functions as a fixed potential side capacitor electrode of the storage capacitor 35. A driving voltage determined by a voltage between the pixel electrode 37 and the counter electrode is applied to the liquid crystal 50, and the liquid crystal 50 is aligned in a state corresponding to the driving voltage. The liquid crystal display device 1 performs display by changing the polarization state of the transmitted light by controlling the orientation of the liquid crystal 50 in this way, and selectively extracting the transmitted light using a polarization selection means such as a polarizing plate. Device.

  As described above, in the liquid crystal display device 1, the semiconductor film of the TFT 306 formed in the drive circuit region 6 has a higher mobility than the semiconductor film of the TFT 305 formed in the pixel region 5. For this reason, the data line driving circuit 61 and the scanning line driving circuit 62 can be operated at high speed, and leakage current due to light of the TFT 305 arranged in the pixel region 5 can be suppressed. Therefore, high-quality display without display unevenness caused by leakage current can be performed.

<B. Manufacturing method of element substrate>
Then, the manufacturing method of the element substrate 11 is demonstrated using FIGS. FIG. 4 is a process diagram showing manufacturing steps of the element substrate 11. FIGS. 5 and 6 are cross-sectional views of the element substrate 11 in the manufacturing process, and an enlarged partial cross section of each of the pixel region 5 and the drive circuit region 6 in the element substrate 11 is shown. is there. These drawings and the following description focus on the element substrate 11 corresponding to one liquid crystal display device 1, but the element substrate 11 is actually a disc-shaped quartz wafer 100 as shown in FIG. Many are manufactured at a time.

  In step P101 of FIG. 4, a light-shielding film 49 containing metal is formed in part of the pixel region 5 on the transparent substrate 10 made of quartz (FIG. 5A). Here, the substrate 10 is a part of the quartz wafer 100 shown in FIG.

  A more detailed formation position of the light shielding film 49 will be described with reference to FIG. FIG. 8A is a plan view showing the position of the pixel region 5 where the light shielding film 49 is to be formed on the substrate 10, and FIG. 8B is an enlarged view of the region B in FIG. 8A. It is the top view shown. As shown in FIG. 8B, the light shielding film 49 is formed in a plurality of regions set at equal intervals in a matrix in the pixel region 5. These regions are regions corresponding to the formation region of the TFT 305 in each pixel. In other words, the light shielding film 49 is formed in a region overlapping the formation region of the TFT 305 in the pixel region 5. The TFT 305 is desirably formed inside the light shielding film 49 when viewed from the direction perpendicular to the substrate 10.

  As a material of the light shielding film 49, for example, a metal film containing Ti, Cr, W, Ta, Mo, Pd, or the like formed by a method such as sputtering, or a metal alloy film such as metal silicide can be used. Although the thickness of the light shielding film 49 is not specifically limited, For example, it shall be about 100 nm-500 nm. The light-shielding film 49 is obtained by forming the metal film or metal alloy film on the substrate 10 and then etching it using a photolithography method and patterning it into an island shape as shown in FIG. It is done.

  Next, in step P102, a silicon oxide film 41 as an “insulating film” of the present invention is formed on the substrate 10 so as to cover the light shielding film 49 (FIG. 5B). In this step, the silicon oxide film 41 is formed on the substrate 10 by a physical vapor deposition method such as a plasma chemical vapor deposition method (PECVD method), a low pressure chemical vapor deposition method (LPCVD method), or a sputtering method. It is carried out by forming it to about several hundred nm.

  Next, in step P103, an amorphous silicon film 42A as a “silicon film” of the present invention is formed on the silicon oxide film 41 (FIG. 5C). In this step, for example, an amorphous silicon film is formed on the silicon oxide film 41 by a physical vapor deposition method such as a plasma chemical vapor deposition method (PECVD method), a low pressure chemical vapor deposition method (LPCVD method), or a sputtering method. This is performed by forming 42A with a thickness of about 50 nm.

  In the subsequent process P104, the laser beam is irradiated to the substrate 10 from the side opposite to the side where the light shielding film 49 is formed on the substrate 10 using a laser annealing apparatus (FIG. 5D). The laser light incident on the region where the light shielding film 49 is formed is reflected or absorbed by the light shielding film 49. On the other hand, the laser light incident on the region where the light shielding film 49 is not formed passes through the silicon oxide film 41 and reaches the amorphous silicon film 42A.

Here, the laser beam to be irradiated is preferably a pulsed laser beam. Specifically, the KrF excimer laser beam having a wavelength of about 248 nm, the XeCl excimer laser beam having a wavelength of about 308 nm, and the Nd: YAG laser beam having a wavelength of about 532 nm are used. Second harmonic or second harmonic of Nd: YVO ₄ laser light, fourth harmonic of Nd: YAG laser light having a wavelength of about 266 nm, fourth harmonic of Nd: YVO ₄ laser light, etc. The irradiation may be performed with a width of 30 nsec and an energy density of 0.1 to 1.0 J / cm ² . When the amorphous silicon film 42A is irradiated with these lights, it is melted, solidified and crystallized to become a polycrystalline silicon film 42P with high mobility. That is, the amorphous silicon film 42A in the region where the light shielding film 49 is not formed becomes a polycrystalline silicon film 42P by the laser light, and the amorphous silicon film 42A in the region where the light shielding film 49 is formed is used for the laser light. Since it is not irradiated, the amorphous silicon film 42A remains.

  Next, in step P105, the amorphous silicon film 42A and the polycrystalline silicon film 42P are etched using a photolithography method and patterned into island shapes (FIG. 6A). Specifically, the amorphous silicon film 42A is etched while leaving the formation region of the TFT 305 formed in the pixel region 5, and the polycrystalline silicon film 42P is formed in the formation region of the TFT 306 formed in the drive circuit region 6. Etching process leaving behind. As a result, the amorphous silicon film 42 </ b> A is formed in a region overlapping the formation region of the light shielding film 49.

  Next, in step P106, a thermal oxide film 45 is formed on the surfaces of the amorphous silicon film 42A and the polycrystalline silicon film 42P using a thermal oxidation method (FIG. 6B). This step is performed by placing the substrate 10 in an oxygen atmosphere of about 1000 ° C. At this time, the amorphous silicon film 42A becomes a polycrystalline silicon film 42Q by solid phase growth by heat during thermal oxidation. The polycrystalline silicon film 42Q crystallized by thermal oxidation is a low mobility silicon film having relatively lower crystallinity than the polycrystalline silicon film 42P crystallized by laser annealing.

  Next, in step P107, a silicon oxide film 46 is formed so as to cover the silicon oxide film 41, the polycrystalline silicon films 42P and 42Q, and the thermal oxide film 45. This step is performed using an electron cyclotron resonance PECVD method (ECR-CVD method), an LPCVD method, a PECVD method, or the like. The silicon oxide film 46 thus formed and the above-described thermal oxide film 45 function as gate insulating films of the TFTs 305 and 306. This gate insulating film may be composed of only the thermal oxide film 45 or only the silicon oxide film 46.

  In the subsequent process P108, a metal thin film of tantalum or aluminum is formed on the silicon oxide film 46 by sputtering and then patterned to form the gate electrode 47 (FIG. 6C). When the maximum process temperature after forming the gate electrode 47 is about 1000 ° C. and a metal thin film cannot be used for the gate electrode 47, the gate electrode 47 may be formed using a polycrystalline silicon film into which impurity ions are implanted. .

Next, in process P109, impurity ions serving as donors or acceptors are implanted into the polycrystalline silicon film 42Q using the gate electrode 47 as a mask, and the source region 42QS, the drain region 42QD, and the channel formation region 42QC are self-aligned with the gate electrode 47. To make. Similarly, impurity ions serving as donors or acceptors are implanted into the polycrystalline silicon film 42P using the gate electrode 47 as a mask, and the source region 42PS, the drain region 42PD, and the channel formation region 42PC are formed in a self-aligned manner with respect to the gate electrode 47. . An LDD (Lightly Doped Drain) structure may be used by using an ion implantation mask. If the LDD structure is adopted for the TFT 305 formed in the pixel region 5, the off-current of the TFT 305 can be further reduced. When manufacturing an NMOS transistor, for example, phosphorus (P) is implanted as an impurity element into the polycrystalline silicon films 42P and 42Q at a concentration of 1 × 10 ¹⁶ cm ⁻² . Thereafter, the XeCl excimer laser is irradiated at an irradiation energy density of about 300 mJ / cm ² to 400 mJ / cm ² or heat treatment is performed at a temperature of about 250 ° C. to 1000 ° C. to activate the impurity atoms.

  Next, in step P110, a silicon oxide film 48 as an interlayer insulating film is formed on the upper surfaces of the silicon oxide film 46 and the gate electrode 47 (FIG. 6D). The silicon oxide film 48 is formed with a film thickness of about 500 nm by, for example, PECVD.

  In the subsequent process P111, the source electrode 31, the terminal electrode 32, and the drain electrode 33 are formed (FIG. 6E). More specifically, first, contact holes reaching the source regions 42QS and 42PS and the drain regions 42QD and 42PD are opened in the silicon oxide films 48 and 46 and the thermal oxide film 45. Then, the source electrode 31 and the drain electrode 33 are formed in the contact hole and on the periphery of the contact hole on the silicon oxide film 48. The source electrode 31 and the drain electrode 33 are formed by depositing aluminum by sputtering, for example. Similarly, the terminal electrode 32 for the gate electrode 47 is formed. That is, a contact hole reaching the gate electrode 47 is opened in the silicon oxide film 48 to form the terminal electrode 32 for the gate electrode 47.

  Through the above steps, the TFT 305 including the polycrystalline silicon film 42Q is formed in the pixel region 5, and the TFT 306 including the polycrystalline silicon film 42P is formed in the drive circuit region 6, respectively. In addition, a pixel circuit is formed in the pixel region 5 and a data line driving circuit 61 and a scanning line driving circuit 62 are formed in the driving circuit region 6 to complete the element substrate 11. These circuits may be formed either before or after the TFT 306 is formed. Further, thereafter, the counter substrate 21 is bonded by a known method, the liquid crystal 50 is injected, the liquid crystal injection port 53 is sealed with a sealing agent 52, the wafer 100 is broken (divided), and the like. Is obtained.

  According to the manufacturing method of the element substrate 11 as described above, the semiconductor film (polycrystalline silicon film 42P) of the TFT 306 formed in the drive circuit region 6 is the semiconductor film (polycrystalline silicon film) of the TFT 305 formed in the pixel region 5. The mobility is higher than that of the film 42Q), the data line driving circuit 61 and the scanning line driving circuit 62 can be operated at high speed, and the leakage current due to light of the TFT 305 disposed in the pixel region 5 can be suppressed. . Therefore, high-quality display without display unevenness caused by leakage current can be performed. Further, according to the above manufacturing method, it is not necessary to form and peel off a light-shielding film such as a metal film for a mask during laser annealing after the formation of the amorphous silicon film 42A, so that the process can be simplified. it can. In addition, since there is no metal film forming step or peeling step after the formation of the amorphous silicon film 42A, the semiconductor film (amorphous silicon film 42A, polycrystalline silicon film 42P) is not easily damaged, so that high quality is achieved. The element substrate 11 can be manufactured.

(Electronics)
The liquid crystal display device 1 described above can be used by being mounted on a projector 200 as an “electronic device” as shown in FIG. 9, for example. The projector 200 has a main body 201 and a lens 202. The projector 200 is a device that emits light from a built-in light source (not shown), modulates the light by the liquid crystal display device 1 provided therein, and then projects the light forward from the lens 202. Here, in the liquid crystal display device 1, since the mobility of the semiconductor film is different between the pixel region 5 and the drive circuit region 6, leakage current due to light from the light source hardly occurs, and display unevenness or the like hardly occurs. Therefore, such a projector 200 can perform high-quality display.

  The liquid crystal display device 1 according to the present invention can be mounted on various electronic devices other than the projector 200. For example, a rear projector, a mobile phone, a personal computer, a PDA, a digital camera, a digital video camera, a clock, a display unit, etc. It can be applied to various electronic devices provided with Such an electronic device can perform high-quality display without display unevenness caused by leakage current.

  As mentioned above, although embodiment of this invention was described, various deformation | transformation can be added with respect to the said embodiment in the range which does not deviate from the meaning of this invention. As modifications, for example, the following can be considered.

(Modification 1)
In the process P103 of the above embodiment, after the amorphous silicon film 42A is formed, the amorphous silicon film 42A may be crystallized as necessary. By crystallizing the amorphous silicon film 42A, the electrical characteristics of the element substrate 11 can be improved. Examples of the crystallization method include a solid phase growth method. The solid phase growth method is a method in which annealing is performed for several hours at a temperature of about 500 ° C. to 700 ° C. in an inert gas atmosphere such as nitrogen, and the amorphous silicon film 42A is crystallized while being in a solid phase. By the solid phase growth method, the amorphous silicon film 42A becomes a polycrystalline silicon film having a large crystal grain size. Since the polycrystalline silicon film thus formed also has a relatively lower mobility than the polycrystalline silicon film 42P in the drive circuit region 6 to be formed later by laser annealing, the same effect as in the above embodiment is obtained. be able to. When the thermal oxidation or annealing process exceeding 600 ° C. is not performed, it is necessary to crystallize the amorphous silicon film 42A by applying the first modification.

1 is a plan view of a liquid crystal display device according to an embodiment of the present invention. Sectional drawing of the liquid crystal display device shown in FIG. FIG. 2 is an equivalent circuit diagram of various elements and wirings of a pixel circuit in the liquid crystal display device shown in FIG. The figure which shows the manufacturing process of the element substrate which concerns on embodiment of this invention. FIGS. 3A to 3D are cross-sectional views of an element substrate in an element substrate manufacturing process according to an embodiment of the present invention. FIGS. 3A to 3E are cross-sectional views of an element substrate in an element substrate manufacturing process according to an embodiment of the present invention. The perspective view of the wafer used for manufacture of an element substrate. (A), (b) is a top view for demonstrating the arrangement position of the light shielding film in the element substrate which concerns on embodiment of this invention. The perspective view of the projector as an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid crystal display device as an electro-optical device, 5 ... Pixel region, 6 ... Drive circuit region, 10 ... Substrate, 11 ... Element substrate as an active matrix substrate, 21 ... Counter substrate, 31 ... Source electrode, 32 ... Terminal electrode 33 ... Drain electrode, 34 ... Data line, 35 ... Storage capacitor, 36 ... Scan line, 37 ... Pixel electrode, 41 ... Silicon oxide film as insulating film, 42A ... Amorphous silicon film as silicon film, 42P ... Polycrystalline silicon film, 42Q ... polycrystalline silicon film, 45 ... thermal oxide film, 46, 48 ... silicon oxide film, 47 ... gate electrode, 49 ... light shielding film, 50 ... liquid crystal, 61 ... data line driving circuit, 62 ... scanning Line driver circuit, 100 ... wafer, 200 ... projector as electronic device, 305, 306 ... TFT as switching element.

Claims (4)

A method of manufacturing an active matrix substrate in which a load circuit that performs load switching operation and a drive circuit that controls driving of the load are formed on the same plane,
A region on the light-transmitting substrate that includes at least a region where a switching element included in the load circuit is formed and a region that does not include a region where the drive circuit is formed among regions where the load circuit is formed. A step of forming an island-shaped light shielding film containing a metal;
Forming an insulating film on the substrate so as to cover the light shielding film;
Forming a silicon film on the insulating film;
An active matrix comprising a step of forming a polycrystalline silicon film by irradiating the silicon film with laser light from the side opposite to the side on which the light shielding film is formed of the substrate to crystallize the silicon film. A method for manufacturing a substrate.   An active matrix substrate manufactured by the method for manufacturing an active matrix substrate according to claim 1. An active matrix substrate according to claim 2,
A counter substrate disposed opposite to the active matrix substrate;
An electro-optical device comprising: a liquid crystal sandwiched between the active matrix substrate and the counter substrate. An electronic apparatus comprising the electro-optical device according to claim 3.

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