JP2007277085A - 基板上にナノ粒子を位置付けるための方法 - Google Patents
基板上にナノ粒子を位置付けるための方法 Download PDFInfo
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Abstract
【解決手段】 本発明は、パターニングした基板上にナノ粒子を位置付ける方法を対象とする。この方法は、パターニングした基板に選択的に位置付けたくぼみを設けるステップと、パターニングした基板にナノ粒子の溶液または懸濁液を塗布してぬれた基板を形成するステップと、を含む。ぬれた基板の表面をワイパ部材で拭いて、ぬれた基板から塗布したナノ粒子の一部を除去して、塗布したナノ粒子の残り部分の大多数が基板の選択的に位置付けたくぼみ内に配されるように残す。また、本発明は、位置付けたナノ粒子からカーボン・ナノチューブを形成する方法も対象とする。
【選択図】 図6
Description
この方法では、溶解したナノ粒子を含む溶剤を基板上に堆積し、制御しながら蒸発させることによって溶剤を除去する。溶剤が蒸発すると、ナノ粒子は組織化して結晶層を形成する。この方法は良好に組織化した膜を生成するが、膜の厚さは制御されない。溶剤が蒸発すると、様々な厚さの膜の層が形成される。
この方法では、基板をナノ粒子含有溶液に浸漬し(immerse)、放置する(allowedto sit)。時間が経つと、ナノ粒子は溶液中に拡散し、基板へと進む。この方法は均一な厚さの膜を生成するが、ナノ粒子は密集(close-packed)せず、空隙(ナノ粒子が存在しない領域)を含むことが多い。更に、この方法は、表面上にどこにでもナノ粒子を堆積させる。
この方法では、液体表面にナノ粒子膜を形成する。液体上で膜を圧縮することによって、ナノ粒子を自己組織化させることができる。液体表面上の浸漬被覆(dip coating)によって、膜を固体基板へと移す。この方法は秩序のある配列のナノ粒子層を生成するが、膜厚を制御することが難しい。多くの場合、膜は多層から成るか、または空隙を含む。また、液体から固体基板への膜移動の応力のため、膜にひびが生じる恐れがある。
この方法では、固体基板上にナノ粒子含有溶液をスピン・コート(spin-coat)する。溶剤を蒸発させた後、ナノ粒子膜が残る。この方法によって生成されたナノ粒子膜は、回転遠心鋳造プロセスの非平衡の性質のため、良好には組織化(organized)されていない。
12、22 くぼみ
14、24 ナノ粒子
16 溶剤
18 ワイパ部材
30 ナノチューブ/ナノワイヤ
Claims (20)
- パターニングした基板上にナノ粒子を位置付ける方法であって、
パターニングした基板に選択的に位置付けたくぼみを設けるステップと、
前記パターニングした基板にナノ粒子の溶液または懸濁液を塗布してぬれた基板を形成するステップと、
前記ぬれた基板の表面をワイパ部材で拭いて、前記ぬれた基板から前記塗布したナノ粒子の一部を除去して、前記塗布したナノ粒子の残り部分の大多数が前記選択的に位置付けたくぼみ内に配されるようにするステップと、
を含む、方法。 - 前記塗布したナノ粒子の前記残り部分が前記選択的に位置付けたくぼみ内に配された前記拭いた基板を加熱するステップを更に含む、請求項1に記載の方法。
- 前記ナノ粒子が2nmから50nmのほぼ均一な平均直径を有する、請求項1に記載の方法。
- 前記ナノ粒子が1nmから10nmの平均直径を有する、請求項3に記載の方法。
- 前記位置付けたくぼみの平均直径が前記ナノ粒子の平均直径の1倍および2倍の間である、請求項1に記載の方法。
- 前記拭いた基板を洗浄溶液に接触させた後に前記基板の洗浄溶液接触表面を前記ワイパ部材で拭くステップと、前記塗布したナノ粒子の前記残り部分が前記選択的に位置付けたくぼみ内に配された前記洗浄した基板を加熱するステップと、を更に含む、請求項1に記載の方法。
- 前記ワイパ部材が均一な縁部を有するエラストマ部材である、請求項1に記載の方法。
- 前記ワイパ部材がポリジメチルシロキサンを含む、請求項5に記載の方法。
- 請求項2に記載の前記選択的に位置付けたナノ粒子から調製した一次元材料であって、前記ナノ粒子が前記一次元材料の成長のための触媒位置である、一次元材料。
- 前記一次元材料の直径が前記位置付けたナノ粒子の直径によって制御される、請求項9に記載の一次元材料。
- 化学気相付着によって形成されたカーボン・ナノチューブである、請求項10に記載の一次元材料。
- カーボン・ナノチューブを形成する方法であって、
パターニングした基板に選択的に位置付けたくぼみを設けるステップと、
前記パターニングした基板にナノ粒子の溶液または懸濁液を塗布してぬれた基板を形成するステップと、
前記ぬれた基板の表面をワイパ部材で拭いて、前記ぬれた基板から前記塗布したナノ粒子の一部を除去して、前記塗布したナノ粒子の残り部分の大多数が前記選択的に位置付けたくぼみ内に配されるようにするステップと、
前記塗布したナノ粒子の前記残り部分が前記選択的に位置付けたくぼみ内に配された前記拭いた基板を加熱して、前記加熱した基板上に触媒位置を形成するステップと、
前記触媒位置から前記カーボン・ナノチューブを形成するステップと、
を含む、方法。 - 前記ナノ粒子が酸化鉄を含む、請求項12に記載の方法。
- 前記拭いた基板を洗浄溶液に接触させた後に前記基板の洗浄溶液接触表面を前記ワイパ部材で拭くステップを更に含む、請求項12に記載の方法。
- 前記形成したカーボン・ナノチューブが10nmから50nmの平均直径を有する、請求項12に記載の方法。
- 前記ナノ粒子が1nmから50nmの平均直径を有する、請求項12に記載の方法。
- 基板の1つ以上のくぼみに位置付けたナノ粒子アレイであって、前記くぼみおよび前記位置付けたナノ粒子が同等の直径を有し、前記1つ以上のくぼみ内に単一のナノ粒子が位置付けられるようになっている、ナノ粒子アレイ。
- 前記1つ以上のくぼみの平均直径が前記ナノ粒子の平均直径の1倍および2倍の間である、請求項17に記載のナノ粒子アレイ。
- 請求項17に記載の前記位置付けたナノ粒子アレイから調製した一次元材料であって、前記ナノ粒子が前記一次元材料の成長のための触媒位置である、一次元材料。
- 化学気相付着によって形成されたカーボン・ナノチューブである、請求項19に記載の一次元材料。
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