JP2007254759A5 - - Google Patents
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- Publication number
- JP2007254759A5 JP2007254759A5 JP2007165729A JP2007165729A JP2007254759A5 JP 2007254759 A5 JP2007254759 A5 JP 2007254759A5 JP 2007165729 A JP2007165729 A JP 2007165729A JP 2007165729 A JP2007165729 A JP 2007165729A JP 2007254759 A5 JP2007254759 A5 JP 2007254759A5
- Authority
- JP
- Japan
- Prior art keywords
- sic
- light
- layer
- concentration
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910003465 moissanite Inorganic materials 0.000 claims description 229
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 229
- 229910052757 nitrogen Inorganic materials 0.000 claims description 78
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000000843 powder Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 44
- 229910052782 aluminium Inorganic materials 0.000 claims description 43
- 239000002245 particle Substances 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 118
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 80
- 229910052796 boron Inorganic materials 0.000 description 64
- 239000007789 gas Substances 0.000 description 43
- 229910002601 GaN Inorganic materials 0.000 description 28
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 21
- 229910002704 AlGaN Inorganic materials 0.000 description 17
- 239000002994 raw material Substances 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 239000012535 impurity Substances 0.000 description 16
- 238000000859 sublimation Methods 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 15
- 238000001953 recrystallisation Methods 0.000 description 15
- 238000000137 annealing Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000005284 excitation Effects 0.000 description 13
- 238000009877 rendering Methods 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 11
- 238000002156 mixing Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052761 rare earth metal Inorganic materials 0.000 description 10
- 229910004531 TaB Inorganic materials 0.000 description 9
- 238000002189 fluorescence spectrum Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000005253 cladding Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 229910019748 NbB Inorganic materials 0.000 description 6
- 229910007946 ZrB Inorganic materials 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 239000003086 colorant Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052904 quartz Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- 230000000903 blocking Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000001590 oxidative Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 241001442104 Myosotis discolor Species 0.000 description 2
- 240000000358 Viola adunca Species 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 2
- 235000013487 Viola odorata Nutrition 0.000 description 2
- 235000002254 Viola papilionacea Nutrition 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000005712 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000002378 acidificating Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- SMYKVLBUSSNXMV-UHFFFAOYSA-J aluminum;tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Al+3] SMYKVLBUSSNXMV-UHFFFAOYSA-J 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N germanium monoxide Inorganic materials [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000011068 load Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007165729A JP4303765B2 (ja) | 2003-11-28 | 2007-06-25 | ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003399992 | 2003-11-28 | ||
| JP2007165729A JP4303765B2 (ja) | 2003-11-28 | 2007-06-25 | ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004087110A Division JP4153455B2 (ja) | 2003-11-28 | 2004-03-24 | 蛍光体および発光ダイオード |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008277235A Division JP4303776B2 (ja) | 2003-11-28 | 2008-10-28 | ＳｉＣ半導体、半導体用基板、粉末及び発光ダイオード |
| JP2009027818A Division JP4961443B2 (ja) | 2003-11-28 | 2009-02-09 | 発光ダイオード |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007254759A JP2007254759A (ja) | 2007-10-04 |
| JP2007254759A5 true JP2007254759A5 (fr) | 2008-12-11 |
| JP4303765B2 JP4303765B2 (ja) | 2009-07-29 |
Family
ID=38629287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007165729A Expired - Lifetime JP4303765B2 (ja) | 2003-11-28 | 2007-06-25 | ＳｉＣ半導体、半導体用基板、粉末及び窒化物半導体発光ダイオード |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4303765B2 (fr) |
-
2007
- 2007-06-25 JP JP2007165729A patent/JP4303765B2/ja not_active Expired - Lifetime
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