JP2007246381A - Sintered electroconductive oxide, thermistor element using sintered electroconductive oxide, and temperature sensor using thermistor element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sintered electroconductive oxide capable of proper temperature measurements over the temperature range from a low temperature of -40°C to a high temperature of 900°C or higher, to provide a thermistor element using the sintered electroconductive oxide, and to provide a temperature sensor using the thermistor element. <P>SOLUTION: The sintered electroconductive oxide 1 used for the thermistor element 2 contains a perovskite phase, e.g., represented by composition formula: M1<SB>a</SB>M2<SB>b</SB>M3<SB>c</SB>Al<SB>d</SB>Cr<SB>e</SB>O<SB>f</SB>where M1 is at least one of elements of group 3A other than La; M2 is at least one of elements of group 2A; M3 is at least one of elements of groups 4A, 5A, 6A, 7A and 8 other than Cr; and that a, b, c, d, e and f satisfy prescribed conditional expressions, and t least one metal oxide phase MeO<SB>x</SB>composed of at least one metal element Me of the perovskite phase. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a conductive oxide sintered body having conductivity and a resistance value that varies depending on temperature, a thermistor element using the same, and a temperature sensor using the same.

Conventionally, a conductive oxide sintered body that has conductivity and whose resistance value (specific resistance) varies depending on temperature, a thermistor element that performs temperature measurement using the sintered body, and a temperature using this thermistor element Sensors are known (Patent Documents 1, 2, and 3).
Among these, Patent Document 1 contains Sr, Y, Mn, Al, Fe and O as thermistor elements capable of detecting temperature over a range of 300 ° C. to 1000 ° C., and includes perovskite oxides and garnet oxides. A sintered body for a thermistor element containing each crystal phase and containing at least one crystal phase of Sr—Al-based oxide and Sr—Fe-based oxide is disclosed.
Further, in Patent Document 2, a conductive oxide sintered body having an appropriate specific resistance value in a range from room temperature to 1000 ° C. is represented by M1 _a M2 _b M3 _c M4 _d O ₃ , and a, b, c , D satisfies a predetermined conditional expression, and a conductive oxide sintered body is disclosed.

Further, in Patent Document 3, the composite perovskite oxide represented by (MM ′) O ₃ and a metal oxide represented by AO _x is composed of a mixed sintered body (MM ′) O ₃ .AO _x. A thermistor element is disclosed.

JP 2004-221519 A JP 2003-183075 A JP 2001-143907 A

By the way, as an application of the thermistor element and the temperature sensor, there is an exhaust gas temperature measurement from an internal combustion engine such as an automobile engine. In these applications, in recent years, thermistor elements are required to detect temperature in a high temperature region around 900 ° C. in order to protect DPF and NOx reduction catalyst.
On the other hand, in order to detect a failure (disconnection) of a temperature sensor in an OBD system (On-Board Diagnostic systems) or the like, it is desired that the temperature can be detected even at a low temperature such as when the engine is started or when a key is turned on. In this case, particularly in cold regions, the starting temperature may be below freezing point, so a thermistor element capable of measuring temperature even at −40 ° C. is desired.

However, the above-mentioned Patent Documents 1 and 2 disclose a thermistor element or a sintered body capable of measuring temperature at room temperature or in the range of 300 ° C. or higher to 1000 ° C., and an appropriate resistance change is achieved in this temperature range. As described above, the temperature gradient constant (B constant) is about 4000 K or more (see, for example, Table 4 of Patent Document 2).
For this reason, the thermistor element or thermistor element using these sintered bodies has a large temperature gradient constant (B constant), and the resistance value of the thermistor element becomes too high at a low temperature of −40 ° C. Temperature measurement becomes difficult because measurement becomes difficult.

On the other hand, in Patent Document 3, for example, as shown in Table 1, the resistance value is in the range of 110Ω to 100 kΩ in the temperature range from room temperature to 1000 ° C., and the resistance temperature coefficient β in this range is 2200. It is disclosed that it is in a desirable range of ˜2480K. From the viewpoint of the calculation formula, β is calculated using the same calculation formula as the B constant in this case.
However, in the thermistor element described in Patent Document 3, the relationship between the metal element M or M ′ constituting the composite perovskite oxide (MM ′) O ₃ and the metal element A constituting the metal oxide AO _x is described. No consideration has been given. Therefore, depending on the combination or mixing ratio of the metal element M or M ′ and the metal element A, the complex perovskite oxide (MM ′) O ₃ reacts with the metal oxide AO _x, and an unexpected by-product is generated. Thermistor elements (conductivity, such as composition stability (heat resistance) at high temperatures, such as the formation of metal oxides, or metal element A dissolved in composite perovskite oxide (MM ') O ₃ to cause composition fluctuations. There is a risk of damaging various properties of the oxide sintered body.

  The present invention has been made in view of such problems, and in a temperature range from a low temperature of −40 ° C. to a high temperature range of 900 ° C. or higher, a conductive oxide sintered body capable of appropriately detecting temperature, An object is to provide a thermistor element using the same and a temperature sensor using the thermistor element.

The solution is that at least one element of group 3A elements excluding La is M1, and at least one element of group 2A elements is M2, and 4A, 5A, 6A, 7A and group 8 elements excluding Cr when the M3 at least one element of, is expressed by the composition formula _{M1 a M2 b M3 c Al d} Cr e O f, a, b, c, d, e, f is the following condition fulfilled, perovskite And a conductive perovskite phase having a crystalline structure and a composition formula MeO _x where Me is at least one metal element selected from the metal elements constituting the perovskite phase and having a lower conductivity than the perovskite phase. And at least one metal oxide phase having a crystal structure represented by:
0.600 ≦ a ≦ 1.000
0 ≦ b ≦ 0.400
0.150 ≦ c <0.600
0.40 ≦ d ≦ 0.80
0 <e ≦ 0.050
0 <e / (c + e) ≦ 0.18
2.80 ≦ f ≦ 3.30

  Of the conductive oxide sintered body of the present invention (hereinafter also simply referred to as a sintered body), a conductive perovskite phase in which a, b, c, d, e, and f satisfy the above-mentioned conditional expression is −40 The temperature gradient constant (B constant: B (−40 to 900)) in the temperature range of from C to + 900 ° C. is 2000 to 3000K. Furthermore, the conductive oxide sintered body of the present invention also includes a metal oxide phase having lower conductivity (higher insulation and higher specific resistance) than the perovskite phase. For this reason, it is possible to shift the specific resistance value of the entire conductive oxide sintered body while maintaining the B constant by appropriately changing the ratio of the metal oxide phase in the conductive oxide sintered body. it can. Therefore, the thermistor element using this conductive oxide sintered body can be adjusted to have an appropriate resistance value in the temperature range of −40 ° C. to + 900 ° C. while having a desired form. . Thus, the thermistor element using the conductive oxide sintered body can appropriately measure the temperature in such a wide temperature range. In addition, the circuit configuration for resistance value measurement (temperature measurement) can be simplified, or resistance value measurement with high accuracy can be performed.

Moreover, in the conductive oxide sintered body of the present invention, the metal element Me forming the metal oxide phase MeOx is selected from metal elements constituting the perovskite phase. Therefore, in the sintered body of the present invention in which the perovskite phase and the metal oxide phase coexist, there is no possibility that an unexpected by-product is generated, and there is no possibility that the characteristics are changed due to the formation of the by-product. .
In addition, when the metal element Me is not a metal element forming a perovskite phase, the metal element Me may be dissolved in the perovskite phase, so that a perovskite phase composed of an element different from that before solid solution may be generated. However, in the sintered body of the present invention, such composition fluctuations are unlikely to occur, a stable composition can be maintained, and fluctuations in various characteristics of the sintered body are suppressed.

In the sintered conductive oxide of the present invention, the perovskite phase has a perovskite type (ABO ₃ ) crystal structure, and the A site is usually (M1 _a M2 _b ) and the B site is (M3). a _c Al _d Cr _e) (a M1 _a M2 _b) (composition represented by _{M3 c Al d Cr e) O} 3. However, a, b, c, d, and e satisfy the above-described conditions.
In the case of such a crystal structure, the elements M1 and M2 occupying the A site have close ionic radii and can be easily replaced with each other, and there are few by-products formed of these elements. Exist stably in the substituted composition. Similarly, the elements M3, Al, and Cr occupying the B site have close ionic radii and can be easily replaced with each other, and the generation of by-products composed of these elements is small and replaced. Stable in composition. Therefore, the specific resistance value of the conductive oxide sintered body and its temperature gradient constant (B constant) can be adjusted by continuously changing the composition ratio in a wide composition range.

In addition, the firing conditions (the firing atmosphere such as oxidation and reduction, the firing temperature, etc.) in producing the conductive oxide sintered body of the present invention, and the amount of substitution between elements at the A site and B site of the perovskite phase Depending on the ratio, excess or deficiency of oxygen may occur, so f takes a value of around 3. Thus, the molar ratio of the oxygen atom (M1 _a M2 _b) in the above composition formula, and the molar ratio of the oxygen atoms and (M3 _c Al _d Cr _e) are each exactly 3: has become 1 Even if not, it is only necessary to maintain a perovskite crystal structure.

Further, the metal oxide phase has a lower conductivity than the perovskite phase, and when at least one metal element selected from the metal elements constituting the perovskite phase is Me, a crystal structure represented by MeO _x What is necessary is just to have. Specifically, oxides of a single metal element, for example, Y ₂ O ₃ , SrO, CaO, MnO ₂ , Al ₂ O ₃ , Cr ₂ O _{3 and the} like can be mentioned. In addition, double oxides composed of a plurality of metal elements, for example, Y-Al-based oxides (YAlO ₃ , Y ₃ Al ₅ O _12, etc.), Sr-Al-based oxides (SrAl ₂ O ₄ ), and the like are also included. Further, a plurality of these oxides may be mixed.

  In addition, the average particle diameter which shows the magnitude | size of the crystal particle which comprises an electroconductive oxide sintered compact becomes like this. Preferably it is 7 micrometers or less, More preferably, it is 0.1-7 micrometers, More preferably, it is 0.1-3 micrometers. This is because if the average particle diameter of the crystal particles becomes too large, the characteristics of the sintered body or the thermistor element using the sintered body tend to be unstable.

Furthermore, the conductive oxide sintered body may be a conductive oxide sintered body in which the a and b satisfy the following conditional expression.
0.600 ≦ a <1.000
0 <b ≦ 0.400

  In the conductive oxide sintered body of the present invention, 0.600 ≦ a <1.000 and 0 <b ≦ 0.400, that is, a <1.000, b> 0. That is, in this sintered body, the perovskite phase contains at least one element M1 of the 3A group elements excluding La, and at least one element M2 of the 2A group as essential components. Has a composition satisfying the above conditional expression. In this conductive oxide sintered body (or a thermistor element using the same), the perovskite phase does not contain the element M2 (b = 0), and when it is produced in large numbers, There is an advantage that the characteristic variation among the individual conductive oxide sintered bodies (thermistor elements) and the characteristic variation between the firing lots can be reduced.

Furthermore, the conductive oxide sintered body is preferably a conductive oxide sintered body in which a, b, c, d, e, and f satisfy the following conditional expressions.
0.820 ≦ a ≦ 0.950
0.050 ≦ b ≦ 0.180
0.181 ≦ c ≦ 0.585
0.410 ≦ d ≦ 0.790
0.005 ≦ e ≦ 0.050
0 <e / (c + e) ≦ 0.18
2.91 ≦ f ≦ 3.27

In the conductive oxide sintered body of the present invention in which a to f satisfy the above-described conditional expression, the B constant in the temperature range of −40 ° C. to 900 ° C. can be more reliably adjusted to the range of 2000 to 3000K. .
Moreover, in this conductive oxide sintered body in which a to f satisfy the above-described conditional expression, a plurality of conductive sintered bodies (thermistor elements using the same) in which a to f are specified to a certain numerical value are also manufactured. In addition, it is possible to further reduce the characteristic variation among the individual sintered sintered bodies (thermistor elements) and the characteristic variation among the firing lots.

Furthermore, it is preferable to use a conductive oxide sintered body in which a, b, c, d, e, and f satisfy the following conditional expressions.
0.850 ≦ b ≦ 0.940
0.060 ≦ b ≦ 0.150
0.181 ≦ c ≦ 0.545
0.450 ≦ d ≦ 0.780
0.005 ≦ e ≦ 0.050
0 <e / (c + e) ≦ 0.18
2.92 ≦ f ≦ 3.25

  Furthermore, in the conductive oxide sintered body according to any one of the above, the element M1 is one or more elements selected from Y, Nd, and Yb, and the element M2 is Mg, Ca, Sr. It is preferable that the conductive oxide sintered body be one or more elements selected from the above, and the element M3 is one or more elements selected from Mn and Fe.

  In this conductive oxide sintered body, the element M1 is one or more elements selected from Y, Nd, and Yb, the element M2 is one or more elements selected from Mg, Ca, and Sr, The element M3 is one or more elements selected from Mn and Fe. By selecting these elements, it is easy to obtain the B constant in the above range stably.

  Alternatively, the conductive oxide sintered body according to any one of the above, wherein the element M1 is Y, the element M2 is Sr, and the M3 is Mn. good.

  In particular, in this conductive oxide sintered body, the element M1 is Y, the element M2 is Sr, and the element M3 is Mn. Thereby, the B constant in the above-mentioned range is easily obtained stably.

Furthermore, when the total cross-sectional area of the perovskite phase appearing in the cross section (cross-sectional area S) of the conductive oxide sintered body is SP, the S and SP are A conductive oxide sintered body satisfying the following formula is preferable.
0.20 ≦ SP / S ≦ 0.80

Since the sintered body contains a perovskite phase and a metal oxide phase, a perovskite phase and a metal oxide phase also appear in the cross section. In the sintered body of the present invention, the cross-section (cross-sectional area S) of the sintered body and the total cross-sectional area SP of the perovskite phase appearing in the sintered body were in a relationship satisfying the above formula.
Specifically, the lower limit of the ratio of the total cross-sectional area SP of the perovskite phase in the cross-sectional area S of the sintered body was set to 0.20 (20%).
When the total cross-sectional area of the perovskite phase exhibiting relatively high conductivity with respect to the metal oxide phase is less than 20%, the conductivity of the sintered body is reduced and the specific resistance is increased. This is because it is difficult to use a sintered body having such a specific resistance value in the form of the thermistor element.

Similarly, the upper limit of the ratio of the total cross-sectional area SP of the perovskite phase in the cross-sectional area S of the sintered body was set to 0.80 (80%) or less. When the total cross-sectional area of the perovskite phase exceeds 80%, the decrease in conductivity of the sintered body is slight and the increase in specific resistance is small. For this reason, there are few advantages by adding the metal oxide phase whose specific resistance is larger than the perovskite phase.
The ratio of the total cross-sectional area SP of the perovskite phase in the cross-sectional area S of the sintered body is equal to the volume fraction of the perovskite phase contained in the sintered body.

  Furthermore, the conductive oxide sintered body according to any one of the above, and the conductive oxide sintered body including a double oxide in the metal oxide phase may be used.

In the sintered body of the present invention, the metal oxide phase contains a double oxide. The double oxide is an oxide composed of two or more metal elements.
Only one of the two elements forming the double oxide moves from the double oxide to the perovskite phase and dissolves in the sintered body or in a high temperature environment such as 900 ° C. Is considered to be less likely to occur from a single element oxide as compared to the case where the metal element (M1 or M2) forming the oxide moves to the perovskite phase and dissolves. Therefore, it is considered that the inclusion of the double oxide in the metal oxide phase can suppress the deviation of the composition of the perovskite phase in a high temperature environment and can improve the heat resistance.

Furthermore, in the conductive oxide sintered body described above, the a and b satisfy the following conditional expression,
0.600 ≦ a <1.000
0 <b ≦ 0.400
The metal oxide phase may be a conductive oxide sintered body containing a double oxide composed of the element M1 and the element M2.

In the sintered body of the present invention, 0.600 ≦ a <1,000 and 0 <b ≦ 0.400, that is, a <1,000, b> 0. That is, in this sintered body, the perovskite phase has a composition containing the 2A group element M2 as an essential component in addition to the 3A group element M1. In addition, the metal oxide phase includes a double oxide composed of the elements M1 and M2 as the double oxide. These elements M1 and M2 are both elements arranged at the A site in the perovskite phase.
At the time of firing the sintered body or in a high temperature environment such as 900 ° C., only one of the two elements M1 and M2 forming the double oxide moves from the double oxide to the A site of the perovskite phase and is solidified. It is considered that dissolution is less likely to occur than when a metal element (M1 or M2) that forms a single element oxide moves to the A site of the perovskite phase and dissolves. Therefore, by including a double oxide composed of the elements M1 and M2 in the metal oxide phase, it is possible to further suppress the deviation of the composition of the perovskite phase in a high temperature environment and improve the heat resistance.
Examples of such a double oxide include SrY ₂ O ₄ and SrY ₄ O ₇ when the perovskite phase is represented by (Y, Sr) (Mn, Al, Cr) O _3. It is done.

Furthermore, in the conductive oxide sintered body described above, the element M1 contains Y, the element M2 contains Sr, and the metal oxide phase is a double oxidation represented by a composition formula SrY ₂ O _4. A conductive oxide sintered body containing a material is preferable.

In the sintered body of the present invention, the metal oxide phase contains SrY ₂ O ₄ as a double oxide. By doing in this way, the heat resistance of a sintered compact and high temperature stability can be improved.

  Furthermore, in the conductive oxide sintered body according to claim 6, the metal oxide phase includes at least one of the elements M1 and M2 and at least one of the elements M3, Al, and Cr. A conductive oxide sintered body containing an oxide is preferable.

In the sintered body of the present invention, the metal oxide phase includes a double oxide composed of elements (M1, M2) forming the A site of the perovskite phase and elements (M3, Al, Cr) forming the B site. Yes. As described above, it is considered that the deviation of the composition of the perovskite phase in a high temperature environment can be further suppressed by using a double oxide composed of an element selected from the elements forming the A site and the B site of the perovskite phase. It is done.
Examples of such double oxides include SrAl ₂ O ₄ , YAlO ₃ , Y ₃ Al ₅ O ₁₂ when the perovskite phase is (Y, Sr) (Mn, Al, Cr) O _3. It is done.

Furthermore, the conductive oxide sintered body described above, wherein the element M2 includes Sr, and the metal oxide phase includes a double oxide represented by a composition formula SrAl ₂ O ₄ . A sintered body is preferable.

In the sintered body of the present invention, the perovskite phase contains Sr, and the metal oxide phase contains SrAl ₂ O ₄ . By doing in this way, there exists an advantage which heat resistance improves.

  Further, a thermistor element using the conductive oxide sintered body according to any one of the above is preferable.

  Since the thermistor element of the present invention uses the above-described conductive oxide sintered body, an appropriate B constant (B (-40 to 900) capable of measuring temperature over a wide temperature range of −40 to 900 ° C. And a thermistor element having an appropriate resistance value within the range of 50Ω to 500 kΩ in this temperature range.

  Further, a thermistor element including the conductive oxide sintered body according to any one of the above items and a reduction-resistant reduction-resistant film that covers the conductive oxide sintered body is preferable.

  The thermistor element of the present invention has a conductive oxide sintered body and a reduction-resistant film covering the conductive oxide sintered body. For this reason, even when the thermistor element is exposed to a reducing atmosphere, the sintered body is protected by the reduction-resistant coating, and the sintered body is prevented from being reduced. Therefore, the thermistor element (sintered body) The resistance value indicated by can be maintained.

  Furthermore, a temperature sensor using the thermistor element is preferable.

  In the temperature sensor of the present invention, since the thermistor element using the conductive oxide sintered body is used, the temperature sensor can measure the temperature over a wide temperature range of −40 to 900 ° C. In addition, a temperature sensor that can simplify the circuit configuration for resistance value measurement (temperature measurement) or enable resistance value measurement with high accuracy can be obtained.

  An example of the thermistor element 2 using the conductive oxide sintered body 1 according to the present invention will be described in comparison with a comparative example.

First, manufacture of the electroconductive oxide sintered compact 1 and the thermistor element 2 concerning Examples 1-18 and Comparative Examples 1 and 2 is demonstrated.
First, a calcined powder for the perovskite phase is obtained as follows. That is, Y ₂ O ₃ , Nd ₂ O ₃ , Yb ₂ O ₃ , SrCO ₃ , MgO, CaCO ₃ , MnO ₂ , Fe ₂ O ₃ , Al ₂ O ₃ , Cr ₂ O ₃ (all purity 99) % or more of a commercially available product.) using the formula (when a composition _{formula) M1 a M2 b M3 c Al} d Cr e O 3, elements M1, M2, M3 becomes the combination shown in Table 1 In addition, each a, b, c, d, e is weighed so as to have the number of moles shown in Table 1. Furthermore, the raw material powder mixture for the perovskite phase was prepared by wet mixing and drying these raw material powders. Next, this raw material powder mixture was calcined for 2 hours at 1400 ° C. in an air atmosphere to obtain a calcined powder for the perovskite phase having an average particle diameter of 1 to 2 μm.

On the other hand, the calcined powder for metal oxide phases according to Examples 1 to 15, 17, 18 and Comparative Example 1 is obtained as follows. That is, SrCO ₃ , Al ₂ O ₃ (all commercially available products with a purity of 99% or more) were used as raw material powders, and weighed so as to have a chemical formula (composition formula) SrAl ₂ O _4. The raw material powder mixture for the metal oxide phase was prepared by wet mixing and drying the raw material powder. Next, this raw material powder mixture was calcined for 2 hours at 1200 ° C. in an air atmosphere to obtain a calcined powder for a metal oxide phase having an average particle diameter of 1 to 2 μm.
In addition, in order to form the reduction resistant film of Example 17, a binder and a dispersion medium were added to the calcined powder of SrAl ₂ O ₄ and kneaded to separately prepare a slurry for dip coating.

Moreover, the calcined powder for the metal oxide phase according to Example 16 is obtained as follows. That is, as raw material powders, Y ₂ O ₃ and SrCO ₃ (all commercially available products having a purity of 99% or more were used) were weighed so as to have a chemical formula (composition formula) SrY ₂ O _4. The raw material powder mixture for the metal oxide phase was prepared by wet mixing and drying the raw material powder. Next, this raw material powder mixture was calcined for 2 hours at 1200 ° C. in an air atmosphere to obtain a calcined powder for a metal oxide phase having an average particle diameter of 1 to 2 μm.

Next, the calcined powder for the perovskite phase and the calcined powder for the metal oxide phase are weighed, and the calcined powder is used with a resin pot and high-purity Al ₂ O ₃ boulder, with ethanol as the dispersion medium, Wet mixed grinding was performed.

Next, the obtained slurry was dried at 80 ° C. for 2 hours to obtain a thermistor synthetic powder. Thereafter, 20 parts by weight of a binder mainly composed of polyvinyl butyral is added to 100 parts by weight of the thermistor synthetic powder, mixed and dried. Furthermore, it granulated through the sieve of a 250 micrometer mesh, and the granulated powder was obtained.
In addition, as a binder which can be used, it is not specifically limited to the above-mentioned polyvinyl butyral, For example, polyvinyl alcohol, an acrylic binder, etc. are mentioned. The amount of the binder is usually 5 to 20 parts by weight, preferably 10 to 20 parts by weight, based on the total amount of the calcined powder.
Moreover, when mixing with a binder, it is preferable that the average particle diameter of the thermistor synthetic powder is 2.0 μm or less, whereby uniform mixing is possible.

Subsequently, the above granulated powder was used for press molding (press pressure: 4500 kg / cm ² ) by a die molding method, and as shown in FIG. 1, a pair of electrode wires 2a and 2b made of Pt—Rh alloy. A non-fired molded body having a hexagonal plate shape (thickness: 1.24 mm) in which one end thereof is embedded is obtained. Then, 2Hr baking was carried out at 1500 degreeC in air | atmosphere, and the thermistor element 2 of Examples 1-16 and 18 was manufactured. The thermistor elements according to Comparative Examples 1 and 2 were manufactured in the same manner.
Each dimension of the thermistor element 2 is a hexagonal shape with a side of 1.15 mm, a thickness of 1.00 mm, a diameter φ0.3 mm of the electrode wires 2a and 2b, an electrode center distance of 0.74 mm (gap 0.44 mm), and an electrode insertion amount 1.10 mm.

In addition, about the thermistor element of Example 17, after immersing the above-mentioned unbaking molded object in the slurry for the above-mentioned dip coating, it pulled up and dried, and the film was formed on the surface of this unbaking molded object. Next, the unfired molded body with the coating was fired at 1500 ° C. for 2 hours in the atmosphere, and as shown in FIG. 4, the sintered body 1 and SrAl ₂ O _{4 made of} SrAl ₂ O ₄ that densely covers the surface. The thermistor element 2 of Example 17 provided with the reducible reduction-resistant film 1b was manufactured.

Next, the B constant (temperature gradient constant) was measured for the thermistor elements of Examples 1 to 18 and Comparative Examples 1 and 2 as follows. That is, first, the thermistor element 2 was left in an environment of absolute temperature T (−40) = 233K (= −40 ° C.), and the initial resistance value Rs (−40) of the thermistor element 2 in that state was measured. . Next, the thermistor element 2 was left in an environment of absolute temperature T (900) = 1173K (= 900 ° C.), and the initial resistance value Rs (900) of the thermistor element 2 in that state was measured. And B constant: B (-40-900) was computed according to the following formula | equation (1).
B (-40 ~ 900) = ln [Rs (900) / Rs (-40)] / [1 / T (900) -1 / T (-40)] (1)
Rs (-40): Initial resistance value (kΩ) of the thermistor element at −40 ° C. Rs (900): Initial resistance value (kΩ) of the thermistor element at 900 ° C.

Further, the thermistor element 2 according to Examples 1, 2, 3, 6, and 17 is incorporated into the temperature sensor 100 as described later, and the initial resistance value Rt (−40 of the thermistor element 2 in the state of the temperature sensor 100 is described. ) And Rt (900). Subsequently, the temperature is maintained at 1050 ° C. × 50 Hr in the atmosphere, and thereafter, the resistance value Rt ′ (− 40), Rt ′ after the heat treatment of the thermistor element 2 in the state of the temperature sensor 100 at −40 ° C. and 900 ° C. is performed in the same manner as described above. (900) was measured respectively. Then, from the comparison between the initial resistance value Rt (-40) at -40 ° C. and the post-heat treatment resistance value Rt ′ (-40), the temperature change converted value CT (-40) of the resistance change due to the heat treatment (unit: deg) ) Was calculated by the following formula (2). Also from the comparison between the initial resistance value Rt (900) at 900 ° C. and the post-heat treatment resistance value Rt ′ (900), a temperature change converted value CT (900) was calculated by the same equation (3). In addition, the larger one of the temperature change converted values CT (-40) and CT (900) is shown in Table 1 as the temperature change converted value CT (deg).
CT (-40) = [(B (-40 ~ 900) × T (-40)) / [ln (Rt '(-40) / Rt (-40)) × T (-40) + B (-40 ~ 900)]]-T (-40) (2)
CT (900) = [(B (-40 to 900) × T (900)) / [ln (Rt '(900) / Rt (900)) × T (900) + B (-40 to 900)]] -T (900) (3)
Note that, in the temperature sensor 100, an oxide film is formed in advance on the inner peripheral surface of the metal tube 3 and the metal outer cylinder constituting the sheath member 8. Thereby, even when the vicinity of the thermistor element 2 of the temperature sensor 100 is at a high temperature, oxidation of the outer tube of the metal tube 3 and the sheath member 8 is suppressed, and the atmosphere in the metal tube 3 is prevented from becoming a reducing atmosphere. Has been. Therefore, it is prevented that the thermistor element 2 is reduced and its resistance value changes.

Furthermore, the resistance change when the temperature change was repeatedly applied in the atmosphere was evaluated for the thermistor element 2 (single unit) according to each example and comparative example. Specifically, it is cooled from room temperature (25 ° C.) to −40 ° C. at a temperature decrease rate of −80 deg / Hr and left for 2.5 hours in a −40 ° C. environment, and then the resistance value R 1 (−40) of the thermistor element is set. taking measurement. Thereafter, the temperature is increased to 900 ° C. at a temperature increase rate of +300 deg / Hr, maintained at 900 ° C. for 2 hours, and the resistance value R1 (900) is measured. Next, the temperature is cooled again to −40 ° C. at a temperature drop rate of −80 deg / Hr, maintained at −40 ° C. for 2.5 Hr, and the resistance value R 2 (−40) of the thermistor element is measured. Thereafter, the temperature is further increased to 900 ° C. at a temperature increase rate of +300 deg / Hr, maintained at 900 ° C. for 2 hours, and the resistance value R2 (900) is measured.
Based on the comparison between the resistance value R1 (-40) and resistance value R2 (-40) at -40 ° C, the temperature change conversion value DT (-40) (unit: deg) It was calculated by the following formula (4). Further, from the comparison between the resistance value R1 (900) and the resistance value R2 (900) at 900 ° C., the temperature change converted value DT (900) was calculated by the same equation (5). In addition, the larger one of the temperature change converted values DT (-40) and DT (900) is shown in Table 1 as the temperature change converted value DT (deg).
DT (-40) = [(B (-40 ~ 900) x T (-40)) / [ln (R2 (-40) / R1 (-40)) x T (-40) + B (-40 ~ 900)]] − T
(-40) ... (4)
DT (900) = [(B (-40 to 900) × T (900)) / [ln (R2 (900) / R1 (900)) × T (900) + B (-40 to 900)]] − T
(900) ... (5)
These results are shown in Table 1.

Moreover, the cross-sectional structure | tissue photograph of the sintered compact 1 was image | photographed as follows, and area fraction SP / S was computed.
First, the sintered body 1 was embedded in a resin, and a buffing treatment using a 3 μm diamond paste was performed to prepare a sample whose cross section was polished. Thereafter, the cross section is photographed at a magnification of 3000 times with a scanning electron microscope (trade name: JSM-6460LA, manufactured by JEOL). FIG. 3 shows a cross-sectional photograph of the sintered body 1 according to Example 6. From the composition analysis by EDS, the white portion is the perovskite phase and the dark gray portion is the metal oxide phase (specifically, SrAl ₂ O ₄ ). The black part is a pore. A 40 μm × 30 μm field of view of the photographed tissue photograph was analyzed with an image analyzer, and the ratio (area fraction) SP / S of the phase area SP of the perovskite phase to the field of view (cross-sectional area S) was determined.

  In a sintered body composed of a composite phase, the area fraction occupied by a specific phase in an arbitrary cross section is equal to the volume fraction occupied by the specific phase in the sintered body. That is, the area fraction SP / S is equal to the volume fraction of the perovskite phase in the sintered body 1. Further, as can be seen with reference to FIG. 3, the sintered body 1 of the present example is composed of two phases of a perovskite phase and a metal oxide phase, so that the area fraction SP / S is excluding the pores. This indicates the area ratio and volume ratio of the perovskite phase and the metal oxide phase.

First, Examples 1 to 7 and 18 will be described. According to Table 1, M1 = Y, M2 = Sr, and M3 = Mn. Formula _{Y a Sr b Mn c Al d} Cr e O f values a, b, c, d, e, f are conductive satisfies the following conditional expression and perovskite phase, of electrically conductive than the perovskite phase In the thermistor element 2 using the conductive oxide sintered body 1 of Examples 1 to 7 and 18 composed of a low metal oxide phase (SrAl ₂ O _{4 in} this example), the B constant: B (− 40 to 900) becomes the conductive oxide sintered body 1 (thermistor element 2) having a relatively low value of B (-40 to 900) = 2000 to 3000K as compared with the prior art.
0.600 ≦ a ≦ 1.000
0 ≦ b ≦ 0.400
0.150 ≦ c <0.600
0.400 ≦ d ≦ 0.800
0 <e ≦ 0.050
0 <e / (c + e) ≦ 0.18
2.80 ≦ f ≦ 3.30

Although the value f is not described in Table 1, the composition ratio of each element of Y, Sr, Mn, Al, Cr, O using fluorescent X-ray analysis and the area calculated by the above-described method. From the rate or presence / absence ratio of the crystal phase identified by powder X-ray diffraction analysis, it is confirmed that f is in the range of 2.80 to 3.30. Specifically, in this example, the abundance ratio of the perovskite phase and the metal oxide phase (SrAl ₂ O ₄ ) is specified, and the amount of each metal element is distributed to the perovskite phase and the metal oxide phase. Then, after determining that the number of O contained in the metal oxide phase (SrAl ₂ O ₄ ) is 4 (that is, SrAl ₂ O ₄ has no oxygen deficiency), By calculating the amount of O used, the number f of O in the perovskite phase is calculated.

Moreover, since the sintered body 1 includes a metal oxide phase (SrAl ₂ O ₄ ) having a conductivity lower than that of the perovskite phase in addition to the perovskite phase, a sintered body composed only of the perovskite phase (for example, Compared to Comparative Example 2), the resistance value indicated by the thermistor element 2 such as initial resistance values Rs (-40) and Rs (900) can be increased while maintaining the B constant, and the perovskite phase The resistance value can be adjusted to an appropriate value depending on the amount ratio of the metal oxide phase.

This will be specifically described. In the sintered body of Comparative Example 2 in which the metal oxide phase (SrAl ₂ O ₄ ) does not exist, the B constant (B (−40 to 900) = 2553 K) is appropriate, but the thermistor element 2 in the form of the present embodiment. In this case, since the sintered body is composed only of the perovskite phase having relatively high conductivity, the initial resistance value Rs (-40) = 39 kΩ, Rs (900) = 0.006 kΩ (= 6Ω) Therefore, the resistance value of the thermistor element 2 is low, and the resistance value measurement tends to be difficult.

  On the other hand, the composition of the perovskite phase (values a to e) is the same as that of Comparative Example 2, but a metal oxide phase with relatively low conductivity is generated, and the area fraction of the perovskite phase is 30 to 40. In the sintered bodies 1 of Examples 1, 2 and 3 having about 1%, the resistance value can be made higher than that of Comparative Example 2 by the amount of the metal oxide phase increased (therefore, the amount of the perovskite phase decreased). For example, in the sintered body 1 of Example 1, the initial resistance values Rs (−40) = 423 kΩ and Rs (900) = 0.088 kΩ are obtained, and it can be seen that the resistance value can be set to an easy resistance value.

  In Example 7 in which a large amount of metal oxide phase having lower conductivity was generated and the area fraction of the perovskite phase was about 16%, the resistance value was further increased. Specifically, the initial resistance values Rs (-40) = 41400 kΩ and Rs (900) = 5.92 kΩ. From this, the ratio of the specific resistance is shifted by appropriately adjusting the area fraction of the perovskite phase in the sintered body 1 and accordingly the area fraction of the perovskite phase. It can be seen that the resistance value can be easily set to a resistance value.

  On the other hand, in the sintered bodies 1 of Examples 1, 2, 3 and 7 as well, the B constant is about 2500 K, which is substantially the same as the B constant of Comparative Example 2. That is, it can be seen that the B constant does not change even when a metal oxide phase is generated.

Further, according to Table 1, Examples 1 to 7 and 18 using Y as the element M1, Examples 8 and 9 using Nd as the element M1, and Examples using Y and Yb as the element M1 10 and 11, similarly, the B constant is B (−40 to 900) = 2000 to 3000K, which is a relatively low value compared to the conventional conductive oxide sintered body 1 (thermistor element 2). You can see that you can. Further, as in Examples 1 to 7 and 18 as well, the resistance value of the thermistor element 2 is appropriately adjusted by changing the quantitative ratio between the perovskite phase and the metal oxide phase (SrAl ₂ O _{4 in} this example). Can be adjusted to the value.

Further, according to Table 1, in contrast to Examples 1 to 7 using Sr as the element M2, Examples 12, 13, and 14 using Sr and Mg as the element M2 or Sr and Ca are similarly used. It can be seen that the conductive oxide sintered body 1 (thermistor element 2) having a B constant of B (−40 to 900) = 2000 to 3000 K, which is a relatively low value as compared with the prior art. Further, as in Examples 1 to 7, these also change the resistance ratio of the thermistor element 2 to an appropriate value by changing the quantitative ratio between the perovskite phase and the metal oxide phase (SrAl ₂ O _{4 in} this example). Can be adjusted.
The same applies to Examples 15 to 7 in which Fe is used as the element M3, compared to Examples 1 to 7 in which Mn is used as the element M3.

Further, in comparison with Examples 1 to 7 using SrAl ₂ O ₄ as the metal oxide phase, Example 16 using SrY ₂ O ₄ similarly uses a perovskite phase and a metal oxide phase (SrY in this example). By changing the quantity ratio with ₂ O ₄ ), the resistance value of the thermistor element 2 can be set to an appropriate value.

In Example 18, the conductive oxide sintered body 1 (thermistor element 2) having a perovskite phase not containing Sr (b = 0) was shown. However, in addition to Y, a conductive oxide containing Sr is also included. It is preferable to use the sintered product 1 (thermistor element 2).
That is, as shown in Examples 1 to 17, it is preferable that a <1.000, b> 0. In the sintered body 1 according to Example 18 having a perovskite phase that does not contain Sr or the like (2A group element M2) (b = 0), when a large number of sintered bodies 1 (thermistor elements 2) are produced, There is a tendency that the characteristic variation and the characteristic variation between firing lots tend to be large. In comparison, for example, in the sintered body 1 of Examples 1 to 17 that includes Sr and the like (Group 2A element M2) in addition to Y and the like (Group 3A element M1), relatively between the individual Characteristic variation and characteristic variation between firing lots can be reduced.

  Further, the thermistor element 2 according to Example 17 having the reduction-resistant coating 1b can be similarly formed as the thermistor element 2 having an appropriate range of B constant and resistance as in Examples 1-7. Furthermore, the thermistor element 2 according to Example 17 has a reduction resistant coating 1b. Therefore, for example, when the thermistor element 2 according to Example 17 is assembled to the temperature sensor 100 described later, a part of the oxide film formed on the outer tube of the metal tube 3 or the sheath member 8 is damaged for some reason. Even if the outer periphery of the thermistor element 2 becomes a reducing atmosphere due to oxidation of the outer tube of the metal tube 3 or the sheath member 8 due to defects in the oxide film, the inner sintered body 1 is Since the reduction is prevented, the resistance value can be further stably maintained.

  In the sintered body of Comparative Example 1, d = 0, that is, the perovskite phase does not contain Al. In the sintered body (thermistor element) according to Comparative Example 1, the B constant is an appropriate value (B (−40 to 900) = 2137K), but a large amount of metal oxide phase is generated and the area of the perovskite phase is increased. Even though the fraction is about 17%, the initial resistance values Rs (-40) = 14 kΩ and Rs (900) = 0.09 kΩ. This is because the conductivity of the perovskite phase is high (specific resistance is low), and the resistance value of the thermistor element cannot be sufficiently high even by the presence of a large amount of metal oxide phase. Thus, in a sintered body having a perovskite phase in which a to f are out of the range of the conditional expression described above, the specific resistance (and hence the resistance value of the thermistor element) and the B constant are not appropriate.

  Thus, the thermistor element 2 using the conductive oxide sintered body 1 having each composition of the present example is suitable for measuring resistance over a wide range from a low temperature of −40 ° C. to a high temperature of 900 ° C. It can have a B constant of 2000-3000K. Furthermore, the thermistor element 2 has a large resistance value by appropriately adjusting the number of metal oxide phases in the sintered body 1, that is, the area fraction of the perovskite phase, according to the shape, the distance between the electrode wires, and the like. The thickness can be adjusted, and an appropriate resistance value can be obtained over a wide range from a low temperature of −40 ° C. to a high temperature of 900 ° C. Thereby, according to the thermistor element 2 of a present Example, it becomes possible to measure temperature appropriately over the wide range from the low temperature of -40 degreeC to the high temperature of 900 degreeC.

  The range of the B constant is preferably B (-40 to 900) = 2000 to 2900K, and more preferably B (-40 to 900) = 2000 to 2800K. .

Further, in Table 1, in the temperature sensor 100 assembled with the thermistor element 2 using the conductive oxide sintered body 1 shown in the columns of Examples 1, 2, 3, 6, and 17, the temperature change converted value CT (deg ) Was a good value within ± 10 deg. A standard for determining whether or not the sintered body 1 (thermistor element 2, temperature sensor 100) has a characteristic that the resistance change with respect to the thermal history is small is considered that the temperature change conversion value CT is ± 10 deg. . This is because the sintered body 1 (thermistor element 2) of each example is included in the range of this standard. In particular, in the sintered bodies 1 (thermistor element 2 and temperature sensor 100) of Examples 2, 3, 6, and 17, CT is a value within ± 3 deg, exhibiting particularly high temperature durability with good temperature characteristics, It turns out that it becomes a sintered compact (thermistor element) with a small resistance change with respect to a log | history.
In addition, about the sintered compact of other Examples 4, 5, 7-16, 18, the measurement result of temperature change conversion value CT is not specified.

However, the temperature change conversion value DT measured by the above-described method is measured for any of the examples and comparative examples. In any of the examples, the temperature change conversion value DT was within ± 10 deg.
The temperature change conversion value DT is ± 10 deg as a guideline for determining whether or not the sintered body 1 (thermistor element 2) has the characteristic that the resistance change with respect to the thermal history is small even with this temperature change conversion value DT. it is conceivable that. Since all the sintered bodies 1 (thermistor elements 2) of Examples 1 to 18 are included in the range of this guideline, the thermistor elements 2 of Examples 1 to 18 are all resistant to thermal history. It can be seen that the sintered body (thermistor element) is small in change and can be used practically without any problem.

  Next, the configuration of the temperature sensor 100 using the thermistor element 2 according to the present embodiment will be described with reference to FIG. The temperature sensor 100 uses the thermistor element 2 as a temperature sensing element. The temperature sensor 100 is mounted on a mounting portion of an exhaust pipe of an automobile, and the thermistor element 2 is disposed in an exhaust pipe through which exhaust gas flows. It is used for detecting the temperature of exhaust gas.

  In the temperature sensor 100, the metal tube 3 extending in the direction along the axis (hereinafter also referred to as the axial direction) has a bottomed cylindrical shape with the tip 31 side (downward in FIG. 2) closed. The thermistor element 2 of this embodiment is housed inside the portion 31. This metal tube 3 is heat-treated in advance, and the outer side surface and the inner side surface thereof are oxidized and covered with an oxide film. Cement 10 is filled around the thermistor element 2 inside the metal tube 3 to fix the thermistor element 2. The rear end 32 of the metal tube 3 is open, and the rear end 32 portion is press-fitted and inserted into the flange member 4.

  The flange member 4 is positioned on the distal end side (downward in FIG. 2) of the cylindrical sheath portion 42 extending in the axial direction, and has a larger outer diameter than the sheath portion 42 and has a radial direction. And a flange portion 41 protruding outward. On the distal end side of the flange portion 41, there is a tapered seating surface 45 that seals with the attachment portion of the exhaust pipe. Moreover, the sheath part 42 has comprised the two-stage shape which consists of the front end side sheath part 44 located in the front end side, and the rear end side sheath part 43 smaller in diameter than this.

  The metal tube 3 press-fitted into the flange member 4 is firmly fixed to the flange 4 by laser welding of the outer peripheral surface of the metal tube 3 at the portion L1 over the entire circumference in the circumferential direction. Yes. Moreover, the substantially cylindrical metal cover member 6 is press-fitted into the distal end side sheath portion 44 of the flange member 4, and is laser-welded at the portion L2 over the entire circumference in the circumferential direction and joined in an airtight state.

  Further, a mounting member 5 having a hexagonal nut portion 51 and a screw portion 52 is rotatably fitted around the flange member 4 and the metal cover member 6. The temperature sensor 100 of the present embodiment is configured so that the seat surface 45 of the flange portion 41 of the flange member 4 is brought into contact with the attachment portion of the exhaust pipe (not shown) and the nut 5 is screwed into the attachment portion, thereby Fix it.

Inside the metal tube 3, the flange member 4, and the metal cover member 6, a sheath member 8 that includes a pair of core wires 7 is disposed. The sheath member 8 includes a metal outer tube, a pair of conductive core wires 7, and an insulating powder that fills the outer tube and holds the core wire 7 while insulating between the outer tube and each core wire 7. It is configured. An oxide film is also formed in advance on the outer cylinder of the sheath member 8 by heat treatment.
The electrode wires 2a and 2b of the thermistor element 2 are connected by laser welding to the core wire 7 protruding from the tip of the outer cylinder of the sheath member 8 inside the metal tube 3 (downward in the figure).
On the other hand, the core wire 7 protruding from the sheath member 8 toward the rear end side is connected to a pair of lead wires 12 via a crimping terminal 11. The core wires 7 and the crimping terminals 11 are insulated from each other by an insulating tube 15.

  The pair of lead wires 12 are drawn out from the inside of the metal cover member 6 to the outside through the lead wire insertion holes of the elastic seal member 13 inserted inside the rear end portion of the metal cover member 6, (It is not shown. For example, it is connected to the terminal member of the connector 21 for connecting with ECU.). As a result, the output of the thermistor element 2 is taken out from the core wire 7 of the sheath member 8 to the external circuit (not shown) via the lead wire 12 and the connector 21, and the temperature of the exhaust gas is detected. The lead wire 12 is covered with a glass braided tube 20 for protection from external forces such as stepping stones, and the glass braided tube 20 is fixed by crimping to the metal cover member 6 with its elastic end member 13 together with the elastic seal member 13. Has been.

  Since the temperature sensor 100 having such a structure uses the thermistor element 2 made of the conductive oxide sintered body 1 described above, the temperature of the exhaust gas of the engine of the automobile is 900 from a low temperature of −40 ° C. The temperature sensor can measure the temperature appropriately over a wide range up to a high temperature of ° C.

In the above, the present invention has been described with reference to the embodiments. However, the present invention is not limited to the above embodiments, and it is needless to say that the present invention can be appropriately modified and applied without departing from the gist thereof.
In the production of a conductive oxide sintered body (thermistor element), as a raw material powder, a powder of a compound containing each element exemplified in the examples can be used. In addition, compounds such as oxides, carbonates, hydroxides, and nitrates can be used. In particular, oxides and carbonates are preferably used.
In addition, when required for conductive oxide sintered bodies, thermistor elements, or temperature sensors, such as the sinterability of conductive oxide sintered bodies, the B constant, and the high temperature durability of temperature characteristics, the characteristics are not impaired. The conductive oxide sintered body may contain other components such as Na, K, Ga, Si, C, Cl, and S.

It is explanatory drawing which shows the shape of the thermistor element which concerns on the Examples 1-16 and 18. It is a fragmentary sectional view which shows the structure of the temperature sensor using the thermistor element of FIG. It is a scanning electron microscope (SEM) photograph which shows the structural example (Example 6) in the cross section of an electroconductive oxide sintered compact. It is a partially broken sectional view showing the structure of the thermistor element according to Example 17.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Conductive oxide sintered body 1b Reduction-resistant film 2 Thermistor element 2a, 2b Electrode wire 100 Temperature sensor

Claims (13)

At least one of the 3A group elements excluding La is M1,
At least one of the 2A group elements is M2,
When at least one element of 4A, 5A, 6A, 7A and group 8 elements excluding Cr is M3,
Is expressed by the composition formula _{M1 a M2 b M3 c Al d} Cr e O f,
a, b, c, d, e, f satisfy the following conditional expression,
A conductive perovskite phase having a perovskite crystal structure;
Less conductive than the perovskite phase,
When at least one metal element selected from the metal elements constituting the perovskite phase is Me,
A conductive oxide sintered body comprising at least one metal oxide phase having a crystal structure represented by a composition formula MeO _x .
0.600 ≦ a ≦ 1.000
0 ≦ b ≦ 0.400
0.150 ≦ c <0.600
0.400 ≦ d ≦ 0.800
0 <e ≦ 0.050
0 <e / (c + e) ≦ 0.18
2.80 ≦ f ≦ 3.30 The conductive oxide sintered body according to claim 1,
A conductive oxide sintered body in which a and b satisfy the following conditional expression.
0.600 ≦ a <1.000
0 <b ≦ 0.400 The conductive oxide sintered body according to claim 2,
The element M1 is one or more elements selected from Y, Nd, and Yb;
The element M2 is one or more elements selected from Mg, Ca and Sr;
A conductive oxide sintered body in which the element M3 is one or more elements selected from Mn and Fe. The conductive oxide sintered body according to claim 2,
The element M1 is Y;
The element M2 is Sr;
A conductive oxide sintered body in which M3 is Mn. The conductive oxide sintered body according to any one of claims 1 to 4, wherein
When the total cross-sectional area of the perovskite phase that appears in the cross-section (cross-sectional area S) of the conductive oxide sintered body is SP,
A conductive oxide sintered body in which S and SP satisfy the following formula.
0.20 ≦ SP / S ≦ 0.80 The conductive oxide sintered body according to any one of claims 1 to 5, wherein
A conductive oxide sintered body containing a double oxide in the metal oxide phase. The conductive oxide sintered body according to claim 6,
A and b satisfy the following conditional expression:
0.600 ≦ a <1.000
0 <b ≦ 0.400
A conductive oxide sintered body comprising a double oxide composed of the element M1 and the element M2 in the metal oxide phase. The conductive oxide sintered body according to claim 7,
The element M1 includes Y,
The element M2 includes Sr,
The metal oxide phase is a conductive oxide sintered body containing a double oxide represented by a composition formula SrY ₂ O ₄ . The conductive oxide sintered body according to claim 6,
A and b satisfy the following conditional expression:
0.600 ≦ a <1.000
0 <b ≦ 0.400
A conductive oxide sintered body containing, in the metal oxide phase, a double oxide of at least one of the elements M1 and M2 and at least one of the elements M3, Al, and Cr. The conductive oxide sintered body according to claim 9,
The element M2 includes Sr,
The metal oxide phase is a conductive oxide sintered body containing a double oxide represented by a composition formula SrAl ₂ O ₄ . The thermistor element which uses the electroconductive oxide sintered compact of any one of Claims 1-10. The conductive oxide sintered body according to any one of claims 1 to 10,
A thermistor element comprising: a reduction-resistant reduction-resistant film that covers the conductive oxide sintered body. A temperature sensor using the thermistor element according to claim 11.