JP2007235118A - 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置 - Google Patents

半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置 Download PDF

Info

Publication number
JP2007235118A
JP2007235118A JP2007022864A JP2007022864A JP2007235118A JP 2007235118 A JP2007235118 A JP 2007235118A JP 2007022864 A JP2007022864 A JP 2007022864A JP 2007022864 A JP2007022864 A JP 2007022864A JP 2007235118 A JP2007235118 A JP 2007235118A
Authority
JP
Japan
Prior art keywords
laser beam
semiconductor film
substrate
laser
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007022864A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007235118A5 (enExample
Inventor
Koichiro Tanaka
幸一郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007022864A priority Critical patent/JP2007235118A/ja
Publication of JP2007235118A publication Critical patent/JP2007235118A/ja
Publication of JP2007235118A5 publication Critical patent/JP2007235118A5/ja
Withdrawn legal-status Critical Current

Links

Images

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2007022864A 2006-02-02 2007-02-01 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置 Withdrawn JP2007235118A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007022864A JP2007235118A (ja) 2006-02-02 2007-02-01 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006025276 2006-02-02
JP2007022864A JP2007235118A (ja) 2006-02-02 2007-02-01 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置

Publications (2)

Publication Number Publication Date
JP2007235118A true JP2007235118A (ja) 2007-09-13
JP2007235118A5 JP2007235118A5 (enExample) 2010-02-25

Family

ID=38555341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007022864A Withdrawn JP2007235118A (ja) 2006-02-02 2007-02-01 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置

Country Status (1)

Country Link
JP (1) JP2007235118A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084863A (ja) * 2010-09-13 2012-04-26 Semiconductor Energy Lab Co Ltd 結晶性酸化物半導体膜の作製方法
WO2020050181A1 (ja) * 2018-09-03 2020-03-12 株式会社Uacj 半導体製造方法及び半導体製造装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623089A (ja) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> 半導体製造装置
JPH0215616A (ja) * 1988-07-01 1990-01-19 Fujitsu Ltd レーザ再結晶化方法
JPH10256152A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 多結晶半導体膜の製造方法
JP2002280302A (ja) * 2001-03-16 2002-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003224070A (ja) * 2001-11-26 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003257885A (ja) * 2001-09-25 2003-09-12 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623089A (ja) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> 半導体製造装置
JPH0215616A (ja) * 1988-07-01 1990-01-19 Fujitsu Ltd レーザ再結晶化方法
JPH10256152A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 多結晶半導体膜の製造方法
JP2002280302A (ja) * 2001-03-16 2002-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003257885A (ja) * 2001-09-25 2003-09-12 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP2003224070A (ja) * 2001-11-26 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084863A (ja) * 2010-09-13 2012-04-26 Semiconductor Energy Lab Co Ltd 結晶性酸化物半導体膜の作製方法
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
WO2020050181A1 (ja) * 2018-09-03 2020-03-12 株式会社Uacj 半導体製造方法及び半導体製造装置
JPWO2020050181A1 (ja) * 2018-09-03 2021-08-26 株式会社Uacj 半導体製造方法及び半導体製造装置
JP7062776B2 (ja) 2018-09-03 2022-05-06 株式会社Uacj 半導体製造方法及び半導体製造装置
US11410850B2 (en) 2018-09-03 2022-08-09 Uacj Corporation Aluminum oxide semiconductor manufacturing method and aluminum oxide semiconductor manufacturing device
TWI803691B (zh) * 2018-09-03 2023-06-01 日商Ｕａｃｊ股份有限公司 半導體製造方法及半導體製造裝置

Similar Documents

Publication Publication Date Title
US7563661B2 (en) Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
US7714251B2 (en) Laser irradiation apparatus
KR101354162B1 (ko) 레이저 조사방법, 레이저 조사장치, 및 반도체장치 제조방법
TWI479660B (zh) 薄膜電晶體，其製造方法，及半導體裝置
US7638378B2 (en) Method for forming semiconductor device
CN1744283B (zh) 半导体器件的制造方法
US8349714B2 (en) Method of crystallizing semiconductor film and method of manufacturing semiconductor device
JP5264017B2 (ja) 半導体装置の作製方法
JP4954495B2 (ja) 半導体装置の作製方法
US20100041190A1 (en) Semiconductor device and method for manufacturing the same
JP5227552B2 (ja) 薄膜トランジスタ及びその作製方法、並びに半導体装置
JP2007235118A (ja) 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置
JP4732118B2 (ja) 半導体装置の作製方法
JP4421197B2 (ja) 半導体装置の作製方法
JP2006148086A (ja) レーザ照射方法、レーザ照射装置、および半導体装置の作製方法
JP5094099B2 (ja) 半導体装置の作製方法
JP2005340377A (ja) 半導体装置の作製方法及び半導体装置
JP2007173782A (ja) レーザ照射装置
JP2007194605A (ja) レーザ照射装置、及び半導体装置の作製方法
JP2006049646A (ja) アクティブマトリクス基板、電気光学装置、電子デバイス及びアクティブマトリクス基板の製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100106

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100106

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120801

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121106

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20121203