JP2007235118A - 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置 - Google Patents

半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置 Download PDF

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JP2007235118A
JP2007235118A JP2007022864A JP2007022864A JP2007235118A JP 2007235118 A JP2007235118 A JP 2007235118A JP 2007022864 A JP2007022864 A JP 2007022864A JP 2007022864 A JP2007022864 A JP 2007022864A JP 2007235118 A JP2007235118 A JP 2007235118A
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laser beam
semiconductor film
substrate
laser
layer
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JP2007235118A5 (enrdf_load_stackoverflow
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Koichiro Tanaka
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007022864A 2006-02-02 2007-02-01 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置 Withdrawn JP2007235118A (ja)

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JP2006025276 2006-02-02
JP2007022864A JP2007235118A (ja) 2006-02-02 2007-02-01 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置

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JP2007235118A5 JP2007235118A5 (enrdf_load_stackoverflow) 2010-02-25

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084863A (ja) * 2010-09-13 2012-04-26 Semiconductor Energy Lab Co Ltd 結晶性酸化物半導体膜の作製方法
WO2020050181A1 (ja) * 2018-09-03 2020-03-12 株式会社Uacj 半導体製造方法及び半導体製造装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623089A (ja) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> 半導体製造装置
JPH0215616A (ja) * 1988-07-01 1990-01-19 Fujitsu Ltd レーザ再結晶化方法
JPH10256152A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 多結晶半導体膜の製造方法
JP2002280302A (ja) * 2001-03-16 2002-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003224070A (ja) * 2001-11-26 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003257885A (ja) * 2001-09-25 2003-09-12 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623089A (ja) * 1985-06-27 1987-01-09 Nippon Kogaku Kk <Nikon> 半導体製造装置
JPH0215616A (ja) * 1988-07-01 1990-01-19 Fujitsu Ltd レーザ再結晶化方法
JPH10256152A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 多結晶半導体膜の製造方法
JP2002280302A (ja) * 2001-03-16 2002-09-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2003257885A (ja) * 2001-09-25 2003-09-12 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP2003224070A (ja) * 2001-11-26 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012084863A (ja) * 2010-09-13 2012-04-26 Semiconductor Energy Lab Co Ltd 結晶性酸化物半導体膜の作製方法
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
WO2020050181A1 (ja) * 2018-09-03 2020-03-12 株式会社Uacj 半導体製造方法及び半導体製造装置
JPWO2020050181A1 (ja) * 2018-09-03 2021-08-26 株式会社Uacj 半導体製造方法及び半導体製造装置
JP7062776B2 (ja) 2018-09-03 2022-05-06 株式会社Uacj 半導体製造方法及び半導体製造装置
US11410850B2 (en) 2018-09-03 2022-08-09 Uacj Corporation Aluminum oxide semiconductor manufacturing method and aluminum oxide semiconductor manufacturing device
TWI803691B (zh) * 2018-09-03 2023-06-01 日商Ｕａｃｊ股份有限公司 半導體製造方法及半導體製造裝置

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