JP2007234431A - Organic light-emitting device, method of manufacturing organic light-emitting device, and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic light-emitting device equipped with organic light emitting element in which deterioration of light-emitting efficiency can be suppressed or prevented appropriately, a method of manufacturing the organic light emitting device in which such an organic light emitting device can be manufactured, and an electronic equipment that has high reliability installed with this organic light emitting device. <P>SOLUTION: The light emitting device (organic light emitting device) 10 has a TFT circuit board (substrate) 20 which is mainly constituted of an inorganic material at least in the vicinity of one face, a plurality of organic EL elements 1 (organic light emitting elements) equipped with organic light emitting layers 5 mainly composed of organic luminescent material between an anode 3 and a cathode 8, and a sealing layer 9 which is installed to include a light emitting region 11, and which is mainly constituted of inorganic material. The sealing layer 9 is joined with the TFT circuit board 20 via an inter-laminar insulation layer (inorganic layer) 26 at the outer periphery of the light emitting region 11. Furthermore, the sealing layer 9 may be one that is directly joined with the TFT circuit board 20. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an organic light emitting device, a method for manufacturing the organic light emitting device, and an electronic apparatus.

Electroluminescence elements (organic EL elements) using organic light-emitting materials have many developments, such as promising applications as organic light-emitting elements in solid-state, inexpensive, large-area full-color display devices (organic light-emitting devices). (For example, refer to Patent Document 1).
In general, an organic EL element has an organic light emitting layer composed of an organic light emitting material between a cathode and an anode. When an electric field is applied between the cathode and the anode, electrons are applied to the organic light emitting layer from the cathode side. Are injected, and holes are injected from the anode side.

Then, the injected electrons and holes are recombined in the organic light emitting layer, and at least a part of the deactivation energy when the energy level returns from the conduction band to the valence band is released as light energy. The light emitting layer emits light.
In such an organic EL device, the constituent material of the cathode is usually an alkali metal such as lithium or calcium, for the purpose of improving the injection efficiency of electrons (carriers) from the cathode to the organic light emitting layer. Metal materials such as alkaline earth metals are often used as the main material.

However, such a metal material is extremely reactive and easily deteriorates and deteriorates when it comes into contact with an oxygen-containing substance such as moisture or oxygen. When this metal material is altered or deteriorated, that is, when the cathode is altered or deteriorated, electrons are not smoothly injected from the cathode into the organic light emitting layer, and the characteristics such as the luminous efficiency of the organic EL element are lowered. There is a problem of doing.
In addition, since the organic light emitting material is also reactive with the oxygen-containing substance, such a problem occurs similarly when the organic light emitting material is altered or deteriorated.

In order to solve such a problem, that is, to prevent the deterioration and deterioration of each part of the organic EL element, the organic EL element is sealed using a sealing material having a gas barrier property against the oxygen-containing substance. It is necessary to suppress or prevent the movement (intrusion) of the oxygen-containing substance from the outside to the inside of the organic EL element.
As such a method, for example, in Patent Document 2, after an organic EL element is provided between two glass substrates, each part including the side surface of the organic EL element exposed between these glass substrates is bonded to an epoxy. A method of sealing an organic EL element by covering with a resin has been proposed.

  However, although a sealing material such as a glass substrate used in such a method exhibits excellent gas barrier properties, a photocurable resin such as an epoxy resin is a gas barrier against an oxygen-containing substance as compared with a sealing material. Since it is inferior in property, there exists a problem that an oxygen containing substance enters into an organic EL element through this photocurable resin. For this reason, the above-described method does not provide a sufficient sealing effect to prevent deterioration of the characteristics of the organic EL element.

JP-A-10-153967 Japanese Utility Model Publication No. 64-1498

  An object of the present invention is to provide an organic light-emitting device including an organic light-emitting element in which deterioration in characteristics such as light emission efficiency is suitably suppressed or prevented, a method for manufacturing the organic light-emitting device capable of manufacturing such an organic light-emitting device, and the organic light-emitting device. An object is to provide a highly reliable electronic device including the device.

Such an object is achieved by the present invention described below.
The organic light-emitting device of the present invention comprises a substrate mainly composed of an inorganic material in the vicinity of at least one surface;
A plurality of organic light-emitting elements provided on the one surface side, each having an organic light-emitting layer mainly composed of an organic light-emitting material between the anode and the cathode;
A sealing layer that is provided so as to include a light emitting region provided with a plurality of the organic light emitting elements and is mainly composed of an inorganic material;
The sealing layer is bonded to the substrate directly or via an inorganic layer mainly composed of an inorganic material at the outer peripheral portion of the light emitting region.
Thereby, the movement of oxygen-containing substances such as moisture and oxygen from the outside to the inside of the organic light emitting device can be suitably suppressed or prevented. As a result, an organic light-emitting device including an organic light-emitting element in which deterioration in characteristics such as light emission efficiency is suitably suppressed or prevented is obtained.

In the organic light emitting device of the present invention, the organic light emitting device is mainly composed of an organic material, partitions the organic light emitting layers, defines a light emitting region, surrounds the bank, and the sealing layer is the substrate. It is preferable to have a non-light emitting region that is bonded directly or via the inorganic layer.
By applying the present invention to the organic light emitting device having such a configuration, it is possible to reliably prevent the bank made of an organic material from being exposed to the outside of the organic light emitting device.
Here, if the organic light emitting device is configured such that a bank made of an organic material is exposed to the outside, the gas barrier property of the bank is lower than that of the inorganic layer. It has been found that oxygen-containing substances such as moisture (water vapor) and oxygen move from the outside to the inside of the organic light-emitting element provided in the apparatus. On the other hand, by providing the sealing layer with the above-described configuration, each organic light-emitting element can be surrounded by the inorganic layer without interposing the bank. It is possible to reliably prevent the oxygen-containing substance from moving to the surface.

In the organic light emitting device of the present invention, the cathode preferably has a work function of a constituent material of 4.0 eV or less.
Thereby, the injection | pouring efficiency of an electron to the organic light emitting layer and the stability of a cathode can be aimed at.
In addition, when the present invention is applied to an organic light emitting device including a cathode whose main material is such a work function constituent material, it is possible to reliably prevent deterioration and deterioration of the cathode over time.

The organic light-emitting device of the present invention comprises a substrate mainly composed of an inorganic material in the vicinity of at least one surface;
A light emitting region formed on the one surface;
A first bank surrounding the light emitting region;
A non-light emitting region surrounding the first bank;
A second bank surrounding the non-light emitting region,
The light emitting region includes a first electrode formed on the substrate, an organic light emitting layer formed on the first electrode, a second electrode formed on the organic light emitting layer, and the first electrode. And a sealing layer containing an inorganic material formed on the two electrodes,
The sealing layer is formed on the first bank so as to extend to at least a part of the non-light-emitting region, and in the non-light-emitting region, is configured directly on the substrate or mainly made of an inorganic material. It is characterized by being bonded through an inorganic layer formed.
Thereby, since the sealing layer can cover not only the upper side of the light emitting region but also the bank surrounding the light emitting region, deterioration of the organic light emitting layer in the light emitting region can be suppressed.

In the organic light emitting device of the present invention, the first bank includes a first layer containing an inorganic material and a second layer containing an organic material,
The second bank includes a first layer including an inorganic material and a second layer including an organic material;
The non-light emitting region includes a first layer including an inorganic material;
The first layer of the first bank, the first layer of the second bank, and the first layer of the non-light-emitting region are the same layer, and the sealing layer is formed in the first layer of the non-light-emitting region. It is preferable to contact.
As a result, the sealing layer can also cover the portion including the organic material of the first bank surrounding the light emitting region, and thus the organic light emitting layer in the light emitting region in the organic light emitting device having the first bank including the organic material. Can be prevented.

In the organic light emitting device of the present invention, an insulating layer containing an inorganic material is formed between the substrate and the pixel electrode, and a part of the sealing layer is the insulating layer in at least a part of the non-light emitting region. It is preferable to contact with.
Thereby, since the light emitting region can be surrounded by the sealing layer containing the inorganic material and the insulating layer containing the inorganic material, the deterioration of the organic light emitting layer in the light emitting region can be further suppressed.

In the organic light emitting device of the present invention, it is preferable that at least a part of the sealing layer is formed to extend on the second bank.
Accordingly, it is possible to prevent exposure of the interface between the sealing layer and the substrate or the inorganic layer in the non-light emitting region, so that it is possible to enhance the effect of suppressing the intrusion of moisture from the interface.
In the organic light-emitting device of the present invention, it is preferable that the sealing layer is composed mainly of an insulating material.
Thereby, the sealing layer exhibits more excellent gas barrier properties.

In the organic light-emitting device of the present invention, the cathode is provided on the opposite side of the anode from the substrate,
It is preferable that the sealing layer is mainly made of a conductive material having a work function larger than that of the constituent material of the cathode and is provided so as to be in contact with the cathode, thereby improving the conductivity of the cathode.
Thereby, the function as an auxiliary electrode which improves the electroconductivity of a cathode can be exhibited in a sealing layer.

In the organic light emitting device of the present invention, it is preferable that the cathodes of the respective organic light emitting elements are integrally formed.
By applying the present invention to an organic light-emitting device including the cathode having such a configuration, the sealing layer more significantly functions as an auxiliary electrode that improves the conductivity of the cathode.
In the organic light emitting device of the present invention, the sealing layer preferably has an average thickness of 50 to 300 nm.
Thereby, the function as a sealing layer, ie, the function as a gas barrier layer, can be exhibited reliably.

In the organic light emitting device of the present invention, it is preferable to have a protective layer provided on the opposite side of the sealing layer from the substrate and having a function of protecting the sealing layer.
Thereby, it can prevent reliably that a sealing layer will be damaged in the process after forming a sealing layer. Thereby, the function which prevents or suppresses the movement (invasion) of the oxygen-containing substance from the outside to the inside of the organic light emitting element can be surely exhibited in the sealing layer.

In the organic light emitting device of the present invention, the inorganic layer is composed of a conductive material,
The inorganic layer constitutes a terminal portion in the external connection portion exposed from the organic light emitting device, and at least a part of the inorganic layer constitutes a wiring that electrically connects the cathode and the terminal portion. preferable.
The organic light-emitting device of the present invention is preferably an active matrix light-emitting device in which individual switching elements are provided for each of the organic light-emitting elements.
By applying the present invention to the organic light emitting device having such a configuration, it is possible to more suitably suppress or prevent the movement of oxygen-containing substances such as moisture and oxygen from the outside to the inside of the organic light emitting element.

The organic light-emitting device manufacturing method of the present invention includes a first step of preparing a substrate having at least one surface mainly composed of an inorganic material and having an inorganic layer composed mainly of an inorganic material on the one surface side. ,
A second step of forming a plurality of organic light-emitting elements each including an organic light-emitting layer mainly composed of an organic light-emitting material between the anode and the cathode on the opposite side of the inorganic layer from the substrate;
A third step of exposing one surface of the substrate or the surface of the inorganic layer in an outer peripheral portion surrounding a light emitting region provided with a plurality of the plurality of organic light emitting elements;
A fourth step of forming a sealing layer mainly composed of an inorganic material so as to include the light emitting region and to be bonded to one surface of the substrate or the surface of the inorganic layer at the outer peripheral portion; It is characterized by having.
As a result, an organic light-emitting device including an organic light-emitting element in which movement of an oxygen-containing substance from the outside to the inside of the organic light-emitting element is preferably suppressed or prevented and a decrease in characteristics such as light emission efficiency is preferably suppressed or prevented is manufactured. can do.

In the method for manufacturing an organic light emitting device of the present invention, prior to the formation of the organic light emitting layer in the second step, the method includes forming a bank that defines the light emitting region,
In the third step, it is preferable that the bank existing in the outer peripheral portion is removed to expose one surface of the substrate or the surface of the inorganic layer to form a penetrating portion.
By applying the present invention to the manufacture of an organic light-emitting device having such a configuration, it is possible to reliably manufacture an organic light-emitting device including an organic light-emitting element in which deterioration in characteristics such as light emission efficiency is suitably suppressed or prevented.
An electronic apparatus according to the present invention includes the organic light-emitting device according to the present invention.
Thereby, a highly reliable electronic device can be obtained.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of an organic light-emitting device, a method for manufacturing an organic light-emitting device, and an electronic apparatus according to the invention will be described with reference to the accompanying drawings.
Hereinafter, a case where the light-emitting device of the present invention is applied to an active matrix light-emitting device will be described as an example.
<Active matrix light emitting device>
First, a first embodiment in which the light-emitting device of the present invention is applied to an active matrix light-emitting device will be described.

<< First Embodiment >>
1 to 4 are views showing a first embodiment of an active matrix light emitting device to which the light emitting device of the present invention is applied, FIG. 1 is a plan view, and FIGS. 2 to 4 are longitudinal sectional views. . 2, 3, and 4 are longitudinal sectional views showing cross sections corresponding to the cross section taken along the line AA, the line BB, and the line CC in FIG. 1, respectively. FIG. 5 is a longitudinal sectional view showing another configuration of the through portion in the first embodiment of the active matrix light-emitting device. In FIG. 2 to FIG. 5, for the sake of easy understanding, the hatching that indicates the cross section is omitted except for the main portions described in the present embodiment. Furthermore, in FIG. 1 to FIG. 5, the relative relationships between the respective parts shown in the figures are slightly different. In the following description, the front side in FIG. 1 is referred to as “upper”, the back side “lower”, the upper side in FIGS. 2 to 5 is referred to as “upper”, and the lower side is referred to as “lower”.

  The active matrix light emitting device (hereinafter simply referred to as “light emitting device”) 10 shown in FIGS. 1 to 4 includes a TFT circuit substrate (substrate) 20, a wiring layer 29 provided on the TFT circuit substrate 20, and an interlayer. An insulating layer 26, a plurality of organic EL elements (organic light emitting elements) 1 provided on the interlayer insulating layer 26, a partition wall 35 that partitions each organic EL element 1, and an upper side of each organic EL element 1. And a protective layer 91 provided on the upper side of the sealing layer 9.

The TFT circuit substrate 20 includes a support substrate 21 and a circuit unit 22 formed on the support substrate 21.
The support substrate 21 serves as a support for each part of the light emitting device 10.
Moreover, since the light-emitting device 10 of this embodiment is a structure (bottom emission type) which takes out light from the support substrate 21 (anode 3 mentioned later) side, the support substrate 21 is substantially transparent (colorless transparent, colored transparent). , Translucent).
As such a support substrate 21, a substrate having a relatively high hardness among various glass material substrates and various resin substrates having translucency is suitably used.

  Specifically, for example, glass materials such as quartz glass and soda glass, polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin polymer, polyamide, polyethersulfone, polymethyl methacrylate, polycarbonate, polyarylate, etc. A substrate composed mainly of a resin material or the like can be used.

The average thickness of the support substrate 21 is not particularly limited, but is preferably about 1 to 30 mm, and more preferably about 5 to 20 mm.
The circuit unit 22 includes a plurality of driving TFTs (switching elements) 24 formed on the support substrate 21, a gate insulating layer 23, and an insulating layer 25. In FIG. 2 and FIG. 4, only one driving TFT 24 is shown for convenience of explanation, but actually, the driving TFT 24 corresponds to each organic EL element 1 shown in FIG. A matrix is formed on the support substrate 21.

The gate insulating layer 23 and the insulating layer 25 are mainly composed of an insulating inorganic material, and may be composed of the same inorganic material or different inorganic materials.
The constituent material (insulating inorganic material) of the gate insulating layer 23 and the insulating layer 25 is not particularly limited. For example, SiO ₂ , SiON, SiN, TiN, AlN, AlOx (aluminum oxide Al ₂ O ₃ ), etc. These can be used, and one or more of these can be used in combination.

  The driving TFT 24 includes a source region 244 and a drain region 245 formed on the support substrate 21, a channel region 241 formed between the source region 244 and the drain region 245, and a gate formed on the channel region 241. The insulating layer 23 and the gate electrode 243 formed on the gate insulating layer 23 are included. Note that the source region 244 and the drain region 245 are electrically connected to the connection portion 27 and the connection portion 28, respectively.

The wiring layer 29 is provided on the insulating layer 25.
The wiring layer 29 includes a plurality of wirings, and in the electrical connection portion 12 where the interlayer insulating layer 26 is opened, a part of the wiring layer 29 is electrically connected to the cathode 8 described later. The other part is connected to the connection portion 27, whereby the source region 244 and the wiring layer 29 are electrically connected. The wiring layer 29 is exposed from the external connection portion 14 so that it can be electrically connected to the integrated circuit that controls the operation of the driving TFT 24 in the external connection portion 14 where the interlayer insulating layer 26 is opened. A terminal portion 291 is provided, and all the wirings are electrically connected to the terminal portion 291.

The wiring layer 29 is mainly composed of a metal material.
As this metal material, a material having excellent conductivity is suitably used, and examples thereof include aluminum, copper, tantalum, molybdenum, titanium, and tungsten, and one or two or more of these are combined. Can be used.
The interlayer insulating layer 26 has a function of separating the TFT circuit substrate 20 and the organic EL element 1 and is provided on the insulating layer 25 so as to cover the wiring layer 29.
Similar to the gate insulating layer 23 and the insulating layer 25 described above, the interlayer insulating layer 26 is mainly composed of an inorganic material having insulating properties.

As a constituent material of the interlayer insulating layer 26, the same material as the inorganic material having an insulating property described above can be used.
In this embodiment, the insulating layer 25 constitutes the upper surface of the TFT circuit substrate (substrate) 20, and the wiring layer 29 and the interlayer insulating layer 26 formed on the insulating layer 25 are mainly made of an inorganic material. The comprised inorganic substance layer is comprised.

The organic EL element 1 is provided corresponding to each driving TFT 24 with the interlayer insulating layer 26 interposed therebetween.
In addition, the first partition wall portion (first layer) 31 and the first layer that partition the adjacent organic EL elements 1 (organic light emitting layers 5) and define the light emitting region 11 in which the plurality of organic EL elements 1 are provided. A partition wall 35 constituted by two partition walls (second layer) 32 is provided on the interlayer insulating layer 26. Here, the constituent materials of the first partition wall portion 31 and the second partition wall portion 32 are selected in consideration of heat resistance, liquid repellency, ink solvent resistance, adhesion to the underlayer, and the like. As the constituent material of the second partition wall 32, an inorganic material and an organic material are selected, respectively.

Specifically, examples of the constituent material of the first partition wall 31 include inorganic materials such as SiO ₂ , SiON, SiN, TiN, and AlN.

Moreover, as a constituent material of the 2nd partition part 32, organic materials, such as an acrylic resin, a polyimide resin, and a fluorine resin, are mentioned, for example, By using a fluorine resin, the 2nd partition part 32 is mentioned above. It is possible to improve the moisture absorption resistance.
The first partition wall 31 may be omitted depending on the configuration of the organic semiconductor layer 7 (the hole transport layer 4, the organic light emitting layer 5, and the electron transport layer 6).
The height of the partition wall 35 is appropriately set according to the total thickness of the anode 3 and the organic semiconductor layer 7 and is not particularly limited, but is preferably about 30 to 500 nm. By having such a height, the function as a partition wall (bank) is sufficiently exhibited.

  In the present embodiment, the light emitting region 11 is composed of a region surrounded by the thick line shown in FIG. 1 or a region including the vicinity thereof, that is, a region including a plurality of organic EL elements 1 and a part of the partition walls 35. The And the penetration part 13 which is a non-light-emission area | region is formed so that the partition part 35, ie, the outer peripheral part of the light emission area | region 11, may be formed, and the interlayer insulation layer 26 and the sealing layer 9 are joined in this penetration part 13. Yes.

  Here, the partition wall 35 is located in the light emitting region 11, partitions the organic semiconductor layers 7 and surrounds (defines) the light emitting region 11, and a first portion (first bank) 351, and the outside of the light emitting region 11. And a second portion (second bank) 352 that surrounds the penetrating portion 13. In other words, the first portion 351 surrounds the light emitting region 11, the non-light emitting region surrounds the first portion 351, and the second portion 352 surrounds the non-light emitting region.

  In the present embodiment, the anode 3 of each organic EL element 1 constitutes a pixel electrode (first electrode) and is electrically connected to the drain region 245 of each driving TFT 24 via the connection portion 27. Yes. The organic semiconductor layer 7 including the hole transport layer 4, the organic light emitting layer 5, and the electron transport layer 6 is individually formed for each organic EL element 1, and the cathode 8 is a common electrode ( Second electrode).

Hereinafter, the configuration of the organic EL element 1 will be described.
As shown in FIGS. 2 and 4, the organic EL element 1 includes an anode 3, a cathode 8, and an organic semiconductor layer 7 provided between the anode 3 and the cathode 8. In the present embodiment, the organic semiconductor layer 7 is a stacked body in which the hole transport layer 4, the organic light emitting layer 5, and the electron transport layer 6 are stacked in this order from the anode 3 side.

The anode 3 is an electrode that injects holes into the organic semiconductor layer 7 (in this embodiment, the hole transport layer 4).
As a constituent material (anode material) of the anode 3, a light-transmitting conductive material is selected because the light-emitting device 10 has a bottom emission structure in which light is extracted from the anode 3 side. What has electroconductivity is used suitably.

Examples of the constituent material of the anode 3 include indium tin oxide (ITO), fluorine-containing indium tin oxide (FITO), antimony tin oxide (ATO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), and tin oxide. Examples include transparent conductive materials such as (SnO ₂ ), zinc oxide (ZnO), fluorine-containing tin oxide (FTO), fluorine-containing indium oxide (FIO), and indium oxide (IO), and at least one of these materials Can be used.

The average thickness of the anode 3 is not particularly limited, but is preferably about 10 to 500 nm, and more preferably about 50 to 200 nm. If the thickness of the anode 3 is too thin, the function as the anode 3 may not be sufficiently exhibited. On the other hand, if the anode 3 is too thick, the light transmittance may decrease depending on the type of the anode material. The organic EL element 1 having a bottom emission type structure may not be suitable for practical use.
Such an anode 3 has a light transmittance (visible light region) of preferably 60% or more, more preferably 80% or more. Thereby, light can be efficiently extracted from the anode 3 side.

On the other hand, the cathode 8 is an electrode that injects electrons into the organic semiconductor layer 7 (in this embodiment, the electron transport layer 6).
As a constituent material (anode material) of the cathode 8, a material having a small work function is particularly preferable among those exhibiting excellent conductivity for the purpose of improving the efficiency of electron injection into the electron transport layer 6. Used for.

Examples of the constituent material of the cathode 8 include alkali metals composed of Li, Na, K, Rb, Cs and Fr, and alkaline earth metals composed of Be, Mg, Ca, Sr, Ba and Ra. 1 type or 2 types or more of them can be used in combination.
Further, when an alloy containing a metal as described above is used as a constituent material of the cathode 8, an alloy containing a stable metal such as Ag, Al, or Cu, specifically, an alloy such as MgAg, AlLi, or CuLi. May be used. By using such an alloy as the constituent material of the cathode 8, it is possible to improve the efficiency of injecting electrons into the electron transport layer 6 and the stability of the cathode 8.
Such a cathode 8 has a work function of preferably 4.0 eV or less, more preferably about 1.8 to 3.0 eV. Thereby, the injection efficiency of electrons from the cathode 8 to the electron transport layer 6 can be further improved.

The average thickness of the cathode 8 is not particularly limited, but is preferably about 10 to 500 nm, and more preferably about 50 to 200 nm. If the thickness of the cathode 8 is too thin, the function of the cathode 8 may not be sufficiently exhibited. On the other hand, if the cathode 8 is too thick, characteristics such as the light emission efficiency of the organic EL element 1 may be deteriorated.
Such an anode 3 and a cathode 8 may be formed oppositely. That is, for example, the first electrode that is a pixel electrode may be a cathode, and the second electrode that is a common electrode may be an anode, for example.

As described above, the organic semiconductor layer 7 including the hole transport layer 4, the organic light emitting layer 5, and the electron transport layer 6 is provided between the anode 3 and the cathode 8.
The hole transport layer 4 has a function of transporting holes injected from the anode 3 to the organic light emitting layer 5.
Examples of the constituent material (hole transport material) of the hole transport layer 4 include polyarylamine, fluorene-arylamine copolymer, fluorene-bithiophene copolymer, poly (N-vinylcarbazole), polyvinylpyrene, Polyvinylanthracene, polythiophene, polyalkylthiophene, polyhexylthiophene, poly (p-phenylene vinylene), polytinylene vinylene, pyrene formaldehyde resin, ethyl carbazole formaldehyde resin or derivatives thereof, and the like, one or two of these A combination of more than one species can be used.

Moreover, the said compound can also be used as a mixture with another compound. As an example, the polythiophene-containing mixture includes poly (3,4-ethylenedioxythiophene / styrene sulfonic acid) (PEDOT / PSS).
As the hole transport material, in addition to organic materials such as the above-described polymer materials and low molecular materials, for example, MoO ₃ , V ₂ O ₅ , TiO ₂ , Cu (II) O, Cu ( I) Metal oxides such as ₂ O, NiO, CoO and ZnO can also be used.
The average thickness of the hole transport layer 4 is not particularly limited, but is preferably about 5 to 150 nm, and more preferably about 20 to 100 nm.

Note that a hole injection layer that improves the hole injection efficiency from the anode 3 may be provided between the anode 3 and the hole transport layer 4, for example.
As a constituent material (hole injection material) of this hole injection layer, for example, copper phthalocyanine, 4,4 ′, 4 ″ -tris (N, N-phenyl-3-methylphenylamino) triphenylamine ( m-MTDATA) and the like.

The electron transport layer 6 has a function of transporting electrons injected from the cathode 8 to the organic light emitting layer 5.
As a constituent material (electron transport material) of the electron transport layer 6, for example, 1,3,5-tris [(3-phenyl-6-tri-fluoromethyl) quinoxalin-2-yl] benzene (TPQ1), 1, Benzene compounds such as 3,5-tris [{3- (4-t-butylphenyl) -6-trisfluoromethyl} quinoxalin-2-yl] benzene (TPQ2), naphthalene compounds, phenanthrene compounds, chrysene Compounds, perylene compounds, anthracene compounds, pyrene compounds, acridine compounds, stilbene compounds, thiophene compounds such as BBOT, butadiene compounds, coumarin compounds, quinoline compounds, bistyryl compounds, distyrylpyrazine Pyrazine compounds, quinoxaline compounds, 2,5-diphenyl -Benzoquinone compounds such as para-benzoquinone, naphthoquinone compounds, anthraquinone compounds, 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole (PBD) Oxadiazole compounds such as 3,4,5-triphenyl-1,2,4-triazole, oxazole compounds, anthrone compounds, 1,3,8-trinitro-fluorenone ( Fluorenone compounds such as TNF), diphenoquinone compounds such as MBDQ, stilbenequinone compounds such as MBSQ, anthraquinodimethane compounds, thiopyran dioxide compounds, fluorenylidenemethane compounds, diphenyldicyanoethylene Compounds, fluorene compounds, 8-hydro Shikinorin aluminum (Alq _3), include various metal complexes such as complexes of benzoxazole or benzothiazole as ligand, it may be used singly or in combination of two or more of them.

Although the average thickness of the electron carrying layer 6 is not specifically limited, It is preferable about 1-100 nm, and it is more preferable that it is about 20-50 nm.
Note that an electron injection layer that improves the efficiency of electron injection from the cathode 8 to the electron transport layer 6 may be provided between the cathode 8 and the electron transport layer 6, for example.
Examples of the constituent material (electron injection material) of the electron injection layer include 8-hydroxyquinoline, oxadiazole, or derivatives thereof (for example, metal chelate oxinoid compounds containing 8-hydroxyquinoline). These can be used alone or in combination of two or more.

  Here, when an electric current is applied between the anode 3 and the cathode 8 (voltage is applied), holes that have moved in the hole transport layer 4 are injected into the organic light emitting layer 5 and also moved in the electron transport layer 6. Electrons are injected into the organic light emitting layer 5, and holes and electrons are recombined in the organic light emitting layer 5. And in the organic light emitting layer 5, an exciton (exciton) produces | generates, and when this exciton returns to a ground state, energy (fluorescence and phosphorescence) is discharge | released (light emission).

As a constituent material (light emitting material) of the organic light emitting layer 5, for example, 1,3,5-tris [(3-phenyl-6-tri-fluoromethyl) quinoxalin-2-yl] benzene (TPQ1), 1,3 , 5-tris [{3- (4-t-butylphenyl) -6-trisfluoromethyl} quinoxalin-2-yl] benzene (TPQ2), phthalocyanine, copper phthalocyanine (CuPc), iron phthalocyanine Low molecular weight compounds such as metal or metal-free phthalocyanine compounds such as tris (8-hydroxyquinolinolate) aluminum (Alq ₃ ), factory (2-phenylpyridine) iridium (Ir (ppy) ₃ ) Oxadiazole polymers, triazole polymers, carbazole polymers, fluorene polymers Examples of such a polymer may be used, and one or more of these may be used in combination. Various polymer materials and various low molecular materials can be used alone or in combination.

The average thickness of the organic light emitting layer 5 is not particularly limited, but is preferably about 10 to 150 nm, and more preferably about 50 to 100 nm.
In addition, the organic semiconductor layer 7 is a multilayer body including the organic light-emitting layer 5, that is, a multilayer structure including the hole transport layer 4, the organic light-emitting layer 5, and the electron transport layer 6, as in this embodiment. In other cases, for example, a multi-layer laminate including the organic light emitting layer 5 in which the formation of either the hole transport layer 4 or the electron transport layer 6 is omitted, or the formation of the hole transport layer 4 and the electron transport layer 6 It may be a single layer composed of the organic light emitting layer 5 from which is omitted.

The sealing layer 9 has a function of preventing or suppressing the movement (intrusion) of oxygen-containing substances such as moisture (water vapor) and oxygen from the outside to the inside of the organic EL element 1.
The organic light emitting device of the present invention is characterized by the structure of the sealing layer 9. In this embodiment, the sealing layer 9 is made of an inorganic material and is provided so as to include the light emitting region 11. At the same time, the light emitting region 11 is bonded to the TFT circuit substrate (substrate) 20 via the interlayer insulating layer 26 (an inorganic layer made of an inorganic material) at the outer peripheral portion, that is, the through portion 13.

By adopting such a configuration for the sealing layer 9, each organic EL element 1 is surrounded by a layer composed of an inorganic material (in this embodiment, the sealing layer 9 and the interlayer insulating layer 26).
That is, a space (airtight space) surrounded by layers made of an inorganic material is formed, and each organic EL element 1 is confined in this space.
Here, the layer composed of an inorganic material generally has high airtightness and exhibits excellent gas barrier properties. Therefore, by surrounding each organic EL element 1 with a layer composed of an inorganic material, organic layers are formed. The movement (intrusion) of the oxygen-containing substance from the outside to the inside of the EL element 1 can be suitably suppressed or prevented. As a result, when each part of the organic EL element, in particular, the cathode 8 is made of a material having a small work function such as an alkali metal or an alkaline earth metal as described above, the cathode 8 is deteriorated and deteriorated over time. Is preferably suppressed or prevented. Thereby, it can prevent reliably that characteristics, such as the luminous efficiency of the organic EL element 1, reduce.

  Further, in the organic light emitting device of the present invention, that is, the provision of the sealing layer 9 with the above-described configuration means that, as in this embodiment, the second partition wall portion (bank) in which the light emitting device 10 is made of an organic material. ) It is preferable to apply to those having 32. By applying the organic light emitting device of the present invention to the light emitting device 10 having such a configuration, the layer made of an organic material (second partition wall portion 32) is reliably prevented from being exposed to the outside of the light emitting device 10. can do. That is, each organic EL element 1 can be surrounded by a layer composed of an inorganic material without interposing a layer composed of an organic material (hereinafter referred to as “organic layer”).

  Here, as described in the above-mentioned conventional problems, when the light emitting device is configured such that an organic layer composed of an adhesive (organic material) such as an epoxy resin is exposed to the outside, the organic layer Since the gas barrier property of the light emitting device is lower than that of the inorganic layer, an oxygen-containing substance such as moisture (water vapor) or oxygen moves from the outside to the inside of the organic EL element included in the light emitting device via the organic layer. I know that. On the other hand, by providing the sealing layer 9 with the above-described configuration, each organic EL element 1 can be surrounded by a layer made of an inorganic material without interposing an organic layer, so that the second partition wall The movement of the oxygen-containing substance from the outside to the inside of the light emitting device 10 (organic EL element 1) through the portion 32 (organic layer) can be reliably prevented.

  Further, as in the present embodiment, the sealing layer 9 is formed so as to overlap the first portion 351 and extend to at least a part of the penetrating portion (non-light emitting region) 13. Since the sealing layer 9 can cover not only the upper side of the light emitting region 11 but also the first portion 351 surrounding the light emitting region 11, the organic semiconductor layer 7 (particularly, the organic light emitting layer 5 in the light emitting region 11). ) Degradation can be suppressed.

Further, at least a part of the sealing layer 9 is formed to extend on the second portion 352. By adopting such a configuration, it is possible to prevent the exposure of the interface between the sealing layer 9 and the interlayer insulating layer 26 in the penetrating portion (non-light emitting region) 13, and thus the effect of suppressing the ingress of moisture from the interface Can be increased.
The constituent material (inorganic material) of the sealing layer 9 is not particularly limited as long as the sealing layer 9 can exhibit the gas barrier properties as described above. For example, an insulating material or a cathode A conductive material having higher conductivity than the constituent material 8 is preferably used.

By constituting the inorganic material with the insulating material as the main material, the sealing layer 9 exhibits more excellent gas barrier properties.
Examples of such an insulating material include SiO ₂ , SiON, SiN, TiN, and AlN, and one or more of these can be used in combination. Among these, it is more preferable to use SiN. The sealing layer 9 composed mainly of SiN exhibits particularly excellent gas barrier properties.

When the organic light-emitting device of the present invention is applied to a top emission type light-emitting device, the insulating material is preferably selected from those having excellent translucency, for example, using SiO ₂ , SiON or the like. be able to.
Further, when the cathode 8 is provided on the upper side of the anode 3 and in contact with the sealing layer 9 as in the present embodiment, the sealing layer 9 is mainly made of a material constituting the cathode 8. By using a conductive material having a large function, the conductivity of the cathode 8 can be improved. That is, the sealing layer 9 can function as an auxiliary electrode that improves the conductivity of the cathode 8.

Therefore, it can be said that the cathode 8 and the sealing layer (auxiliary electrode) 9 constitute one cathode (a cathode having a laminated structure).
Specifically, the relationship between the work function of the constituent material of the cathode 8 and the magnitude of the work function of the conductive material of the sealing layer 9 is that the cathode 8 is composed of a constituent material having a work function of 4.0 eV or less as a main material. In this case, the work function of the conductive material is preferably over 4.0 eV, more preferably about 4.5 to 5.5 eV. By satisfying this relationship, the sealing layer 9 can more remarkably function as an auxiliary electrode that improves the conductivity of the cathode 8.

Examples of such a conductive material include Au, Al, Ni, W, Pt, Ag, Cu, and Mo. One or more of these can be used in combination.
By forming the sealing layer 9 with such a conductive material, the sealing layer 9 has excellent conductivity. Then, by forming the cathode 8 with a material having a small work function as described above, the cathode 8 has a high electron injection efficiency into the electron transport layer 6. Therefore, when the cathode 8 and the sealing layer 9 are viewed as one cathode, it can be said that the cathode has both functions. Further, when viewed as a laminated cathode, it can be said that the sealing layer 9 constitutes an electrode (cathode) and the cathode 8 constitutes an electron injection layer.

In the present embodiment, the cathode 8 of each organic EL element 1 is integrally formed. In the light emitting device 10 having such a configuration, by forming the sealing layer 9 with a conductive material, the function of the sealing layer 9 as an auxiliary cathode can be more remarkably exhibited. As a result, the conductivity of the cathode 8 is further improved.
The average thickness of the sealing layer 9 is not particularly limited, but is preferably about 50 to 300 nm, and more preferably about 100 to 200 nm. If the thickness of the sealing layer 9 is too thin, the function as the sealing layer 9, that is, the function as the gas barrier layer may not be sufficiently exhibited. On the other hand, even if the sealing layer 9 is made thick beyond the upper limit, no further effect can be expected.

  Note that, as in the present embodiment, an interlayer insulating layer (insulator layer) 26 containing an inorganic material is formed between the TFT circuit substrate (substrate) 20 and the anode (pixel electrode) 3, and one part of the sealing layer 9 is formed. By forming the portion in contact with the interlayer insulating layer 26 in at least a part of the penetrating portion (non-light emitting region) 13, the light emitting region 11 is formed by the sealing layer 9 containing an inorganic material and the interlayer insulating layer 26 containing an inorganic material. Since it can surround, degradation of the organic-semiconductor layer 7 (especially organic light emitting layer 5) of the light emission area | region 11 can further be suppressed.

In the present embodiment, a protective layer 91 is formed on the sealing layer 9.
The protective layer 91 has a function of protecting the sealing layer 9. By adopting such a configuration, it is possible to reliably prevent the sealing layer 9 from being damaged in the step of connecting the integrated circuit for controlling the operation of the driving TFT 24 and the wiring layer 29 at the external connection portion. . As a result, the sealing layer 9 can reliably exhibit the function of preventing or suppressing the movement (intrusion) of the oxygen-containing substance from the outside to the inside of the organic EL element 1.

The constituent material of the protective layer 91 is not particularly limited as long as it has insulating properties. For example, polyparaxylylene, polyethylene terephthalate, polyethylene naphthalate, polypropylene, polyamide, polymethyl methacrylate, Examples include organic insulating materials such as polycarbonate and polyvinylphenol, and inorganic insulating materials such as SiO ₂ , SiON, SiN, TiN, and AlN. One or more of these may be used in combination. Can be used.

The average thickness of the protective layer 91 is not particularly limited, but is preferably about 50 to 300 nm, and more preferably about 100 to 200 nm.
In addition, it is good also as a structure which provides a protective cover so that the sealing layer 9 may be covered.
Since this protective cover has a function of sealing the sealing layer 9 and blocking the oxygen-containing material, the absolute amount of the oxygen-containing material in contact with the sealing layer 9 can be reduced. As a result, the sealing effect of the oxygen-containing substance by the sealing layer 9 can be further improved.

Although it does not specifically limit as a constituent material of a protective cover, For example, various resin materials, glass material, etc. are mentioned, Among these, it can use 1 type or in combination of 2 or more types.
Although the thickness (average) of a protective cover is not specifically limited, It is preferable that it is about 0.1-30 mm, and it is more preferable that it is about 0.1-10 mm.

The internal space of the protective cover may be in a reduced pressure state, or may be filled with an inert gas such as nitrogen or argon, or may be filled with a desiccant such as silica gel, moroclonite, or molecular sieve. .
In the present embodiment, the case where the sealing layer 9 is bonded to the interlayer insulating layer 26 in the through portion 13, that is, the case where the sealing layer 9 is bonded to the substrate via the inorganic layer has been described. For example, the sealing layer 9 may be bonded to the insulating layer 25 or the gate insulating layer 23 (the sealing layer 9 is directly bonded to the substrate), Further, it may be bonded to the first partition wall 31 (the sealing layer 9 is bonded to the substrate via the inorganic layer).

  For example, in FIG. 5, the partition wall portion 35 includes a first partition portion (first layer) 31 and a first portion 351 surrounding the light emitting region 11 and a second portion 352 surrounding the non-light emitting region (penetrating portion 13). The second partition wall portion (second layer) 32 is formed by being laminated, and only the first partition wall portion 31 is formed in the non-light emitting region. Here, the first partition part 31 of the first part 351, the first partition part 31 of the second part 352, and the first partition part 31 of the non-light emitting region are the same layer.

  According to this configuration, since the partition wall 31 having a large film thickness can be formed between the sealing layer 9 and the wiring layer 29, parasitic capacitance is generated between the sealing layer 9 and the wiring layer 29. The possibility can be reduced. In addition, since the sealing layer 9 can cover the portion (second partition wall portion 32) including the organic material of the first portion 351 surrounding the light emitting region 11, the sealing layer 9 includes the first portion 351 including the organic material. Deterioration of the organic semiconductor layer 7 (particularly, the organic light emitting layer 5) in the light emitting region 11 of the light emitting device 10 can be suppressed.

Furthermore, in addition to the light emitting device 10 shown in the present embodiment, a light emitting device in which the formation of the partition wall portion 35 and / or the protective layer 91 is omitted can be provided.
Note that the light-emitting device 10 as described above may be monochromatic display, and color display is also possible by selecting a light-emitting material used for each organic EL element 1.
Such a light emitting device 10 can be manufactured, for example, as follows using the method for manufacturing an organic light emitting device of the present invention.

  In the manufacturing method of the light emitting device 10 described below, a substrate forming step [1] for preparing a TFT circuit substrate 20 having a wiring layer 29 and an interlayer insulating layer 26 on the upper surface, and a partition wall 35 on the interlayer insulating layer 26 are prepared. A partition wall forming step [2] for forming the organic EL element 1 on the interlayer insulating layer 26 [3], and a sealing layer 9 on the organic EL element 1 and the partition wall 35. A sealing layer forming step [4] to be formed; and a protective layer forming step [5] to form the protective layer 91 on the sealing layer 9. Hereinafter, each process will be described sequentially.

[1] TFT circuit board forming step (first step)
First, the TFT circuit substrate 20 including the wiring layer 29 and the interlayer insulating layer 26 on the upper surface is prepared.
[1-A] First, the support substrate 21 is prepared, and the driving TFT 24 is formed on the support substrate 21.

[1-Aa] First, amorphous silicon having an average thickness of about 30 to 70 nm is mainly formed on the support substrate 21 by the plasma CVD method or the like with the support substrate 21 heated to about 350 ° C. A semiconductor film is formed.
[1-Ab] Next, the semiconductor film is crystallized by laser annealing, solid phase growth, or the like to change the amorphous silicon into polysilicon.
Here, in the laser annealing method, for example, a line beam with a beam length of 400 mm is used with an excimer laser, and the output intensity is set to about 200 mJ / cm ² , for example. As for the line beam, the line beam is scanned such that a portion corresponding to 90% of the peak value of the laser intensity in the short dimension direction overlaps each region.

[1-Ac] Next, the semiconductor film is patterned to form islands, and, for example, TEOS (tetraethoxysilane) or oxygen gas is used as a source gas so as to cover each island-shaped semiconductor film, by a plasma CVD method or the like. Then, the gate insulating layer 23 composed of silicon oxide or silicon nitride having an average thickness of about 60 to 150 nm as a main material is formed.
The patterning of the semiconductor film is, for example, a combination of one or more of physical etching methods such as plasma etching, reactive ion etching, beam etching, and light assisted etching, and chemical etching methods such as wet etching. Can be done.

[1-Ad] Next, a conductive film composed mainly of a metal such as aluminum, tantalum, molybdenum, titanium, or tungsten is formed on the gate insulating layer 23 by, for example, sputtering, and then patterned. A gate electrode 243 is formed.
[1-Ae] Next, in this state, high-concentration phosphorus ions are implanted into each island-like semiconductor film to form the source region 244 and the drain region 245 in a self-aligned manner with respect to the gate electrode 243. Note that a portion where no impurity is introduced becomes a channel region 241.

[1-B] Next, the connection portion 27 and the connection portion 28 that are electrically connected are formed in the source region 244 and the drain region 245, respectively, and the wiring layer 29 is formed.
[1-Ba] First, the insulating layer 25 is formed so as to cover the gate electrode 243 and the gate insulating layer 23, and then a contact hole is formed.
[1-Bb] Next, a metal film is formed in the same manner as in the step [1-Ad] so as to cover the insulating layer 25 and to be in contact with the source region 244 and the drain region 245 in the contact hole, respectively.

[1-Bc] Next, the metal film is patterned to form the connection portion 27 and the connection portion 28 that are in contact with the source region 244 and the drain region 245 in the contact hole, respectively, and the wiring layer 29 is formed on the insulating film 25. Form.
The patterning of the metal film can be performed using the same method as described in the step [1-Ac].

[1-C] Next, the connection portion 28 and the anode 3, the wiring layer 29 and the cathode 8, and the terminal portion 291 (wiring layer 29) and the integrated circuit can be electrically connected. An interlayer insulating layer 26 having a corresponding contact hole is formed on the insulating layer 25.
[1-Ca] First, the interlayer insulating layer 26 is formed on the insulating layer 25.
[1-Cb] Next, contact holes are formed so as to correspond to positions where the connection portion 28 and the anode 3, the wiring layer 29 and the cathode 8, and the terminal portion 291 and the integrated circuit are connected. .
As described above, the TFT circuit substrate 20 including the wiring layer 29 and the interlayer insulating layer 26 on the upper surface is obtained.

[2] Partition Section Formation Step Next, partition sections 35 are formed on the interlayer insulating layer (inorganic layer) 26.
When the partition wall portion 35 is formed, a plurality of openings are provided so as to correspond to the shape of the organic EL element 1 to be formed, and the upper surface of the TFT circuit substrate 20 (this In the embodiment, the through-hole 13 is formed so that the interlayer insulating layer 26) is exposed.

Hereinafter, the formation process of this partition part 35 is explained in full detail.
In the present embodiment, prior to the formation of the partition wall 35, the anode 3 is formed on the interlayer insulating layer 26 so that the anode 3 constituting the pixel electrode corresponds to the opening provided in the partition wall 35. Keep it. With such a configuration, as shown in FIG. 2, the anode 3 and the drain region 245 can be connected via the connection portion 28 below the partition wall portion 35. As a result, when the light emitting device 10 is a bottom emission type light emitting device as in the present embodiment, it is possible to reliably prevent the organic light emitting layer 5 from overlapping the connecting portion 28 on the lower side. Thus, the light extraction efficiency from the TFT circuit substrate 20 side can be improved. When the light emitting device 10 has a top emission structure, the anode 3 may be formed after the partition wall portion 35 is formed.

[2-A] First, the anode (pixel electrode) 3 is formed on the interlayer insulating layer 26 provided on the TFT circuit substrate 20 so as to be in contact with the connection portion 27 through the contact hole.
The anode 3 is formed on the interlayer insulating layer 26 by, for example, a vapor phase process using a sputtering method, a vacuum deposition method, a CVD method, a spin coating method (pyrosol method), a casting method, a micro gravure coating method, or a gravure coating. As described above, by a liquid phase process using a method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an inkjet printing method, etc. It can be formed by forming a conductive film composed mainly of the constituent material of the anode 3 and then patterning it.
These methods are selected in consideration of the physical stability and / or chemical characteristics such as thermal stability of the constituent material of the anode 3 and solubility in a solvent.

[2-B] Next, on the interlayer insulating layer 26, partition walls 35 having openings are formed so as to partition each anode 3, that is, to correspond to the shape of the organic EL element 1 to be formed. At this time, the through portion 13 where the interlayer insulating layer 26 is exposed, the electrode connection portion 12 where the wiring layer 29 is exposed, and the external connection portion 14 where the terminal portion 291 (wiring layer 29) is exposed are formed.
[2-Ba] First, an inorganic insulating film is formed so as to cover the anode 3 and the second interlayer insulating layer 26, and then the first partition wall portion 31 is formed by patterning the insulating film.
The patterning of the insulating film can be performed using the same method as described in the step [1-Ac].

[2-Bb] Next, an organic insulating film is formed so as to cover the anode 3 and the first partition wall 32, and then the second partition wall 32 can be formed by patterning the insulating film.
The patterning of the insulating film can be performed using the same method as described in the step [1-Ac].

Moreover, the shape of the opening part of the partition part 35 may be any shape such as a polygon such as a circle, an ellipse, a quadrangle, and a hexagon.
By the way, when making the shape of the opening of the partition part 35 into a polygon, it is preferable that the corner part is rounded. As a result, when the hole transport layer 4, the organic light emitting layer 5, and the electron transport layer 6 are formed using a liquid material as will be described later, these liquid materials are applied to every corner of the space inside the partition wall 35. Can be reliably supplied to.
As described above, the partition wall portion 35 is formed on the interlayer insulating layer 26.

[3] Organic EL element forming step (second step)
Next, a plurality of organic EL elements 1 are formed on the interlayer insulating layer 26 so as to correspond to the openings provided in the partition walls 35.
[3-A] First, a hole transport layer 4, an organic light emitting layer 5, and an electron transport layer 6 are laminated in this order on the anode 3 exposed in each opening provided in the partition wall 35, and an organic semiconductor layer. 7 is formed.
Hereinafter, the formation method of the positive hole transport layer 4, the organic light emitting layer 5, and the electron carrying layer 6 is demonstrated.

[3-Aa] First, the hole transport layer 4 is formed on each anode 3.
The hole transport layer 4 can be formed by a gas phase process or a liquid phase process as described above, and among them, it is preferable to form the hole transport layer 4 by a liquid phase process using an ink jet method (droplet discharge method). By using the inkjet method, the hole transport layer 4 can be made thinner and the pixel size can be reduced. Further, since the liquid material for forming the hole transport layer can be selectively supplied to the inside of the partition wall portion 35, waste of the liquid material can be omitted.

Specifically, the liquid material for forming the hole transport layer is discharged from the head of the ink jet printing apparatus, supplied onto each anode 3, and after removing the solvent or dedispersing medium, about 150 ° C. if necessary. And heat treatment for a short time.
Examples of the desolvent or dedispersion medium include a method of leaving in a reduced pressure atmosphere, a method of heat treatment (for example, about 50 to 60 ° C.), a method of a flow of an inert gas such as nitrogen gas, and the like. Furthermore, the residual solvent is removed by performing additional heat treatment (about 150 ° C. for a short time).

The liquid material to be used is prepared by dissolving or dispersing the hole transport material as described above in a solvent or a dispersion medium.
The solvent or dispersion medium used for preparing the liquid material is not particularly limited, and examples thereof include various inorganic solvents such as water, carbon tetrachloride, and ethylene carbonate, methyl ethyl ketone (MEK), acetone, diethyl ketone, and methyl isobutyl ketone. (MIBK), ketone solvents such as cyclohexanone, alcohol solvents such as methanol, ethanol and glycerol, ether solvents such as diethyl ether, diisopropyl ether, 1,4-dioxane, tetrahydrofuran (THF), tetrahydropyran (THP), Cellosolve solvents such as methyl cellosolve and ethyl cellosolve, aliphatic hydrocarbon solvents such as hexane, pentane and cyclohexane, aromatic hydrocarbon solvents such as toluene, xylene and benzene, and aromatic heterocyclic compounds such as pyridine and pyrazine Solvents, amide solvents such as N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMA), halogen compound solvents such as dichloromethane and 1,2-dichloroethane, ethyl acetate, methyl acetate, ethyl formate, etc. And various organic solvents such as sulfur compound solvents such as dimethyl sulfoxide (DMSO) and sulfolane, or mixed solvents containing these solvents.
Note that the liquid material supplied onto the anode 3 has high fluidity (low viscosity) and tends to spread in the horizontal direction (plane direction). Spreading outside the region is prevented, and the contour shape of the hole transport layer 4 (organic EL element 1) is accurately defined.

[3-Ab] Next, the organic light emitting layer 5 is formed on each hole transport layer 4.
The organic light emitting layer 5 can also be formed by a gas phase process or a liquid phase process, but for the same reason as described above, it is formed by a liquid phase process using an ink jet method (droplet discharge method). preferable.
In addition, when the organic light emitting layer 5 of a plurality of colors is provided by using the ink jet method, there is an advantage that the pattern can be easily applied for each color.

[3-Ac] Next, the electron transport layer 6 is formed on each organic light emitting layer 5.
The electron transport layer 6 can also be formed by a gas phase process or a liquid phase process. However, for the same reason as described above, the electron transport layer 6 may be formed by a liquid phase process using an ink jet method (droplet discharge method). preferable.
[3-B] Next, the cathode 8 common to each organic EL element 1 is formed on each electron transport layer 6 (organic semiconductor layer 7) and on the partition wall 35.

At this time, as shown in FIG. 2, the cathode 8 is integrated into the vicinity of the through portion 13 of the partition wall portion 35 existing inside the through portion 13 so that the electrode connecting portion 12 can come into contact with the wiring layer 29. Form.
The cathode 8 can be formed, for example, by forming a metal film by the vapor deposition method such as a vacuum deposition method or a sputtering method using the constituent material of the cathode 8 described above, and then patterning the metal film. .

The patterning of the metal film can be performed using the same method as described in the step [1-Ac].
In addition, when a sputtering method or the like is used for forming the cathode 8, when supplying the constituent material of the cathode 8 to the side opposite to the anode 3 of the organic light emitting layer 5, in this embodiment, an electron transport layer is formed on the organic light emitting layer 5. 6 is provided, it is possible to reliably prevent deterioration and deterioration of the organic light emitting layer 5 due to contact (collision) of the constituent materials.

The organic EL element 1 can be manufactured on the interlayer insulating layer 26 through the steps as described above.
In the present embodiment, a region constituted by each organic EL element 1 and a part of the partition wall 35, that is, a region surrounded by a thick line inside the through portion 13 shown in FIG. Constitutes the light emitting region 11.

[4] Sealing layer forming step (third step)
Next, the sealing layer 9 is formed so as to cover the cathode 8 above the cathode 8, that is, to include the light emitting region 11. At this time, the interlayer insulating layer (inorganic layer) 26 and the sealing layer 9 are bonded to each other in the through-hole 13 at the outer peripheral portion of the light emitting region 11, that is, the upper surface of the TFT circuit substrate 20 and the sealing layer 9. The sealing layer 9 is formed so as to be bonded via the interlayer insulating layer 26.

In other words, as shown in FIG. 2, the sealing layer 9 is integrally formed so as to cover the entire inside from the vicinity of the through portion 13 of the partition wall portion 35 existing outside the through portion 13.
For example, the cathode 8 may be patterned after a metal film is formed by a vapor deposition method such as a vacuum deposition method or a sputtering method using the constituent material (inorganic material) of the sealing layer 9 described above. Can be formed.

The patterning of the metal film can be performed using the same method as described in the step [1-Ac].
In forming the metal film, a mask having an opening corresponding to the shape of the sealing layer 9 to be formed is interposed between the cathode 8 and the supply source of the inorganic material, thereby patterning the metal film. The sealing layer 9 can also be formed by omitting.

By the way, the process from the step [3-B] for forming the cathode 8 to the process for forming the sealing layer 9 is performed in a non-oxidizing atmosphere, that is, an atmosphere substantially free of an oxygen-containing substance. Thereby, the sealing layer 9 can be formed on the cathode 8 without deteriorating or deteriorating the metal material contained in the cathode 8.
The non-oxidizing atmosphere may be an atmosphere of an inert gas such as nitrogen, helium, or argon, or may be a reduced pressure atmosphere.

[5] Protection Layer Formation Step Next, the protection layer 91 is formed on the sealing layer 9.
The protective layer 91 can be formed, for example, by forming an insulating film by a vapor phase process or a liquid phase process as described in the step [2-A] and then patterning the insulating film.

The patterning of the insulating film can be performed using the same method as described in the step [1-Ac].
The light emitting device 10 can be manufactured through the steps as described above.
As described above, according to the method for manufacturing an organic light-emitting device of the present invention, it is comparatively easy to compare the light-emitting device 10 having a configuration in which each organic EL element 1 is surrounded by a layer composed of an inorganic material. It can be formed by an easy method.

<< Second Embodiment >>
Next, a second embodiment in which the light emitting device of the present invention is applied to an active matrix light emitting device will be described.
6 and 7 are views showing a second embodiment of an active matrix light emitting device to which the light emitting device of the present invention is applied, FIG. 6 is a plan view, and FIG. 7 is a longitudinal sectional view. FIG. 7 is a longitudinal sectional view showing a section corresponding to the section taken along line AA in FIG. Further, in FIG. 7, for the sake of easy understanding, the hatching indicating the cross section is omitted except for the main portions described in the present embodiment. Furthermore, in FIG. 6 and FIG. 7, the relative relationship is slightly different in each part shown. In the following description, the front side of the sheet of FIG. 6 is referred to as “upper”, the back side “lower”, the upper side in FIG. 7 is referred to as “upper”, and the lower side is referred to as “lower”.

Hereinafter, the second embodiment will be described with a focus on differences from the first embodiment, and description of similar matters will be omitted.
6 and 7 is formed so that a part of the penetration part 13 also has the configuration of the electrode connection part 12, and the sealing layer 9 is bonded to the insulating layer 25 in the penetration part 13. Other than that, the light emitting device 10 is the same as that of the first embodiment.

In other words, in the present embodiment, as shown in FIGS. 6 and 7, the electrode connection portion 12 is continuous with one side of the rectangular through-hole 13 provided so as to surround the outer peripheral portion of the display region 11. (Integral). Further, the sealing layer 25 is directly bonded to the substrate in the through portion 13.
In the electrode connecting portion 12 having such a configuration, the cathode 8 is electrically connected to the wiring layer 29 as in the first embodiment, and the sealing layer 9 and the wiring layer 29 are used as shown in FIG. The sealing layer 9 and the wiring layer 29 are joined at the outer peripheral portion of the cathode 8 so as to surround the cathode 8. That is, in the present embodiment, the wiring layer 29 constitutes an inorganic layer made of an inorganic material, and the sealing layer 9 and the substrate are bonded via the inorganic layer at the outer peripheral portion of the cathode 8.
By configuring the light emitting device 10 ′ as described above, it is possible to reduce the number of manufacturing steps for manufacturing the light emitting device 10 ′ and to reduce the size of the light emitting device 10 ′.

<Electronic equipment>
Such light-emitting devices (light-emitting devices of the present invention) 10, 10 ′ can be incorporated into various electronic devices.
FIG. 8 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which the electronic apparatus of the present invention is applied.

In this figure, a personal computer 1100 includes a main body 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display. The display unit 1106 is rotatable with respect to the main body 1104 via a hinge structure. It is supported by.
In the personal computer 1100, the display unit included in the display unit 1106 includes the light emitting devices 10 and 10 ′ described above.

FIG. 9 is a perspective view showing a configuration of a mobile phone (including PHS) to which the electronic apparatus of the present invention is applied.
In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204 and a mouthpiece 1206, and a display unit.
In the mobile phone 1200, the display unit is composed of the light emitting devices 10 and 10 'described above.

FIG. 10 is a perspective view showing the configuration of a digital still camera to which the electronic apparatus of the present invention is applied. In this figure, connection with an external device is also simply shown.
Here, an ordinary camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an imaging device such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

A display unit is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD, and functions as a finder that displays an object as an electronic image.
In the digital still camera 1300, the display unit is composed of the above-described light emitting devices 10, 10 ′.

A circuit board 1308 is installed inside the case. The circuit board 1308 is provided with a memory that can store (store) an imaging signal.
A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side of the case 1302 (on the back side in the illustrated configuration).
When the photographer confirms the subject image displayed on the display unit and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory of the circuit board 1308.

  In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the data communication input / output terminal 1314 as necessary. Further, the imaging signal stored in the memory of the circuit board 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.

  In addition to the personal computer (mobile personal computer) of FIG. 8, the mobile phone of FIG. 9, and the digital still camera of FIG. 10, the electronic apparatus of the present invention includes, for example, a television, a video camera, a viewfinder type, Monitor direct-view video tape recorder, laptop personal computer, car navigation system, pager, electronic notebook (including communication function), electronic dictionary, calculator, electronic game device, word processor, workstation, videophone, security TV Monitors, electronic binoculars, POS terminals, devices with touch panels (for example, cash dispensers of financial institutions, automatic ticket vending machines), medical devices (for example, electronic thermometers, blood pressure monitors, blood glucose meters, electrocardiographs, ultrasound diagnostic devices, internal Endoscopic display device), fish finder, various measuring instruments Instruments (e.g., gages for vehicles, aircraft, and ships), a flight simulator, various monitors, and a projection display such as a projector. In addition, the electronic device of the present invention may have only a light emitting function that does not have a display function, and can be used, for example, as a light source of a laser printer.

As mentioned above, although the organic light-emitting device of this invention, the manufacturing method of an organic light-emitting device, and an electronic device were demonstrated based on embodiment of illustration, this invention is not limited to these.
The organic light-emitting device of the present invention includes an organic EL element in which a cathode, an organic semiconductor layer, and an anode are stacked in this order on a substrate, and has an organic EL device having a top emission structure that extracts light emitted from the organic semiconductor layer from the anode side. You may make it apply to an apparatus.

Furthermore, the organic light-emitting device of the present invention can be applied to the active matrix light-emitting device as described in the above embodiment. For example, the organic light-emitting device has a plurality of strip-like shapes provided on the substrate at almost equal intervals. The present invention can also be applied to a passive matrix light-emitting device in which an anode and a cathode having substantially the same shape as the anode are substantially orthogonal to each other with an organic semiconductor layer interposed between the electrodes. .
Moreover, the manufacturing method of the organic light-emitting device of the present invention may include one or more steps for any purpose.

It is a top view which shows 1st Embodiment of the active matrix type light-emitting device to which the light-emitting device of this invention is applied. It is a longitudinal cross-sectional view which shows 1st Embodiment of the active matrix type light-emitting device to which the light-emitting device of this invention is applied. It is a longitudinal cross-sectional view which shows 1st Embodiment of the active matrix type light-emitting device to which the light-emitting device of this invention is applied. It is a longitudinal cross-sectional view which shows 1st Embodiment of the active matrix type light-emitting device to which the light-emitting device of this invention is applied. It is a longitudinal cross-sectional view which shows the other structure of the penetration part in 1st Embodiment of an active matrix light-emitting device. It is a top view which shows 2nd Embodiment of the active matrix type light-emitting device to which the light-emitting device of this invention is applied. It is a longitudinal cross-sectional view which shows 2nd Embodiment of the active matrix type light-emitting device to which the light-emitting device of this invention is applied. 1 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which an electronic apparatus of the present invention is applied. It is a perspective view which shows the structure of the mobile telephone (PHS is also included) to which the electronic device of this invention is applied. It is a perspective view which shows the structure of the digital still camera to which the electronic device of this invention is applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL element 3 ... Anode 4 ... Hole transport layer 5 ... Organic light emitting layer 6 ... Electron transport layer 7 ... Organic semiconductor layer 8 ... Cathode 9 ... Sealing layer 10, 10 '... ... Light-emitting device 11 ... Light-emitting area 12 ... Electrode connection part 13 ... Penetration part 14 ... External connection part 20 ... TFT circuit board 21 ... Support substrate 22 ... Circuit part 23 ... Gate insulating layer 24 ... Driving TFT 241 ... Channel region 243 ... Gate electrode 244 ... Source region 245 ... Drain region 25 ... Insulating layer 26 ... Interlayer insulating layer 27, 28 ... Connection part 29 ... Wiring layer 291 ... Terminal Part 31... First partition part 32... Second partition part 35... Partition part 351... First part 352... Second part 91 ... Protective layer 1100 ... Personal computer 1102 ... Keyboard 1104. ... Main body 106 …… Display unit 1200 …… Cellular phone 1202 …… Operation buttons 1204 …… Earpiece 1206 …… Speaker 1300 …… Digital still camera 1302 …… Case (body) 1304 …… Light receiving unit 1306 ………… Shutter Button 1308 …… Circuit board 1312 …… Video signal output terminal 1314 …… Input / output terminal for data communication 1430 …… TV monitor 1440 …… Personal computer

Claims (17)

A substrate mainly composed of an inorganic material in the vicinity of at least one surface;
A plurality of organic light-emitting elements provided on the one surface side, each having an organic light-emitting layer mainly composed of an organic light-emitting material between the anode and the cathode;
A sealing layer that is provided so as to include a light emitting region provided with a plurality of the organic light emitting elements and is mainly composed of an inorganic material;
The organic light-emitting device, wherein the sealing layer is bonded to the substrate directly or via an inorganic layer mainly composed of an inorganic material at an outer peripheral portion of the light-emitting region.   The organic light-emitting layer is mainly composed of an organic material, partitions the organic light-emitting layers, defines a light-emitting region, surrounds the bank, and the sealing layer directly covers the substrate or the inorganic layer. The organic light-emitting device according to claim 1, further comprising a non-light-emitting region that is joined via the organic light-emitting device.   The organic light-emitting device according to claim 1, wherein the cathode has a work function of a constituent material of 4.0 eV or less. A substrate mainly composed of an inorganic material in the vicinity of at least one surface;
A light emitting region formed on the one surface;
A first bank surrounding the light emitting region;
A non-light emitting region surrounding the first bank;
A second bank surrounding the non-light emitting region,
The light emitting region includes a first electrode formed on the substrate, an organic light emitting layer formed on the first electrode, a second electrode formed on the organic light emitting layer, and the first electrode. And a sealing layer containing an inorganic material formed on the two electrodes,
The sealing layer is formed on the first bank so as to extend to at least a part of the non-light-emitting region, and in the non-light-emitting region, is configured directly on the substrate or mainly made of an inorganic material. Organic light-emitting device, wherein the organic light-emitting device is bonded via an inorganic layer formed. The first bank includes a first layer including an inorganic material and a second layer including an organic material;
The second bank includes a first layer including an inorganic material and a second layer including an organic material;
The non-light emitting region includes a first layer including an inorganic material;
The first layer of the first bank, the first layer of the second bank, and the first layer of the non-light-emitting region are the same layer, and the sealing layer is formed in the first layer of the non-light-emitting region. The organic light-emitting device according to claim 4 in contact therewith.   The insulator layer containing an inorganic material is formed between the substrate and the pixel electrode, and a part of the sealing layer is in contact with the insulator layer in at least a part of the non-light emitting region. Organic light emitting device.   The organic light-emitting device according to claim 4, wherein at least a part of the sealing layer is formed to extend on the second bank.   The organic light-emitting device according to claim 1, wherein the sealing layer is composed of an insulating material as a main material. The cathode is provided on the opposite side of the anode from the substrate;
The said sealing layer is mainly comprised with the electrically-conductive material whose work function is larger than the constituent material of the said cathode, and was provided so that the said cathode might be contacted, Thereby, the electroconductivity of the said cathode was improved. An organic light-emitting device according to any one of the above.   The organic light-emitting device according to claim 9, wherein the cathode of each organic light-emitting element is integrally formed.   The organic light-emitting device according to claim 1, wherein the sealing layer has an average thickness of 50 to 300 nm.   The organic light-emitting device according to claim 1, further comprising a protective layer provided on a side opposite to the substrate of the sealing layer and having a function of protecting the sealing layer. The inorganic layer is made of a conductive material,
The inorganic substance layer constitutes a terminal part in an external connection part exposed from the organic light emitting device, and at least a part of the inorganic substance layer constitutes a wiring for electrically connecting the cathode and the terminal part. The organic light-emitting device according to any one of 1 to 12.   The organic light-emitting device according to claim 1, wherein the organic light-emitting device is an active matrix light-emitting device provided with an individual switching element corresponding to each organic light-emitting element. A first step of preparing a substrate comprising at least one surface mainly composed of an inorganic material, and comprising an inorganic layer composed mainly of an inorganic material on the one surface side;
A second step of forming a plurality of organic light-emitting elements each including an organic light-emitting layer mainly composed of an organic light-emitting material between the anode and the cathode on the opposite side of the inorganic layer from the substrate;
A third step of exposing one surface of the substrate or the surface of the inorganic layer in an outer peripheral portion surrounding a light emitting region provided with a plurality of the plurality of organic light emitting elements;
A fourth step of forming a sealing layer mainly composed of an inorganic material so as to include the light emitting region and to be bonded to one surface of the substrate or the surface of the inorganic layer at the outer peripheral portion; A method for producing an organic light emitting device, comprising: Prior to the formation of the organic light emitting layer in the second step, the step of forming a bank that defines the light emitting region,
16. The organic light emitting device according to claim 15, wherein in the third step, the bank existing in the outer peripheral portion is removed to expose one surface of the substrate or the surface of the inorganic layer to form a through portion. Device manufacturing method. An electronic apparatus comprising the organic light-emitting device according to claim 1.

Images