JP2007227822A - Organic semiconductor manufacturing method, and apparatus therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for efficiently continuously producing an organic semiconductor having a plurality of stages of organic layers without line stop, even when any fault occurs in a part, and for manufacturing the organic semiconductors over the arbitrary number of stages. <P>SOLUTION: A method for manufacturing an organic EL panel having a plurality of stages of organic layers has disposing evaporative deposition treatment lines in parallel, comprising a charge generating layer evaporative deposition chamber 1, a hole injection layer evaporative deposition chamber 2, a hole transportation layer evaporative deposition chamber 3, a light emission layer evaporative deposition chamber 4, an electron injection layer evaporative deposition chamber 5, and an AL evaporative deposition chamber 6. A film of organic layer unit in the first stage is formed of a plurality of layers on a substrate while conveying the substrate from an entrance of one of the evaporative deposition treatment lines to its exit. Thereafter, the substrate is carried out from the exit of the one evaporative deposition treatment line through bypass lines 8, 9, to transfer the substrate into an entrance of another line among the evaporative deposition treatment lines disposed in parallel. Further, of the film organic layer in the second stage is formed of a plurality of layers on the substrate while conveying the substrate from the entrance of the other evaporative deposition treatment line to its exit. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method and an apparatus for manufacturing an organic solar cell and other organic semiconductors. For example, the present invention can be applied to an organic EL panel manufacturing method and apparatus for manufacturing an organic electroluminescence (hereinafter abbreviated as organic EL) panel.

  As a device for manufacturing an organic EL panel, a multi-chamber method (cluster method) in which a deposition chamber is arranged around a robot room is currently used in production plants.

In the multi-chamber method, as illustrated in FIG. 14, a charge generation layer (CGL) deposition chamber 1, a hole injection layer (HIL) deposition chamber 2, and hole transport are centered on a robot chamber 20 provided with a robot arm. The layer (HTL) deposition chamber 3, the light emitting layer (EML) deposition chamber 4, the electron injection layer (EIL) deposition chamber 5, and the AL deposition chamber 6 are arranged in an annular shape.
Then, as indicated by the arrows in the figure, a substrate holder (not shown) on which a glass substrate (not shown) is placed is carried from the substrate pretreatment unit 10, and each deposition chamber 1, 2, 3, 4, is moved by the robot arm 20. In this method, the organic layer unit is formed in the order of 5 and 6 and is then transported to the substrate post-processing (sealing) unit 11.

The organic layer unit includes, for example, a charge generation layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron injection layer, and an AL layer.
However, in the case where the organic layer unit as proposed in Patent Document 1 is deposited in multiple stages, there are the following problems.

1) Since the number of layers increases as n stages × (3 to 7 layers), the production amount per unit time is small.
2) If this multi-chamber is arranged in series in n stages in order to shorten the production time, the production volume per unit time can be increased, but if one unit fails, the entire line must be stopped.
In addition, a number of inline methods for continuously transporting substrates on a plurality of evaporation sources, such as Patent Document 2, have been proposed.

In the in-line method, as shown in FIG. 15, the charge generation layer deposition chamber 1, the hole injection layer deposition chamber 2, the hole transport layer deposition are performed between the substrate pretreatment unit 10 and the substrate posttreatment (sealing) unit 11. The chamber 3, the light emitting layer deposition chamber 4, the electron injection layer deposition chamber 5, and the AL deposition chamber 6 are arranged in this order.
This in-line method has the following problems as in the multi-chamber method.
1) In the case of an inline apparatus for one stage, in order to stack n stages, it is necessary to pass through a repeating apparatus, and the production amount per unit time is small.
2) If n stages of vapor deposition sources are arranged in series in order to shorten the production time, the production amount per unit time can be increased, but if one point fails, the entire line must be stopped.
3) Moreover, as shown in FIG. 16, when the vapor deposition chambers 1, 2, 3, 4, 5, and 6 are arranged in series for n stages (see Patent Document 3), a long line is formed and the facility arrangement plan is also restricted. Will increase.

Further, Patent Document 3 proposes a closed loop arrangement in which a plurality of organic EL vapor deposition processing apparatuses are arranged in a square shape, and only the mask passes through the return line and returns to the front stage.
This is basically aimed at continuously depositing three primary colors of red, green and blue for manufacturing a display, and has the following problems.
1) Only the mask returns to the front stage, and the substrate cannot be returned. Therefore, since the number of stages of multi-stage film formation is determined by the apparatus configuration, film formation for an arbitrary n stages cannot be performed.
2) When a certain point breaks down, the entire line is forced to stop.
JP 2003-272860 A JP 2002-348659 A JP2003-157773

  In the present invention, the multi-stage organic layer unit proposed in Patent Document 1 can be produced efficiently and even if some failures occur, production can be continued without stopping the line by reducing the production amount. And it aims at providing the organic-semiconductor manufacturing method which can manufacture the organic layer unit of arbitrary steps, and its apparatus.

  An organic semiconductor manufacturing method according to claim 1 of the present invention for solving the above-mentioned problem is a method for manufacturing an organic semiconductor having a plurality of organic layer units, and is one of vapor deposition processing lines arranged in parallel. A first stage organic layer unit consisting of a plurality of layers is formed on the substrate while transporting the substrate from the inlet of the vapor deposition processing line to the outlet thereof, and then the substrate is bypassed from the outlet of the one vapor deposition processing line. Of the vapor deposition processing lines placed in parallel and carried into the inlet of the other vapor deposition processing line, and further on the substrate while transporting the substrate from the inlet of the other vapor deposition processing line to the outlet thereof. A second-stage organic layer unit comprising a plurality of layers is formed.

  An organic semiconductor manufacturing method according to claim 2 of the present invention that solves the above-mentioned problem is a method of manufacturing an organic semiconductor having a plurality of organic layer units, and is one of vapor deposition processing lines arranged in parallel. After the substrate is transported from the inlet of the vapor deposition processing line to the outlet thereof, a first-stage organic layer unit comprising a plurality of layers is formed on the substrate, and then the substrate is articulated from the outlet of the one vapor deposition processing line. It is carried out by a robot and carried into an inlet of another vapor deposition line among the vapor deposition lines arranged in parallel, and further, the substrate is transported from the inlet of the other vapor deposition line to the outlet thereof. A second-stage organic layer unit comprising a plurality of layers is formed.

  An organic semiconductor manufacturing method according to claim 3 of the present invention for solving the above-mentioned problem is a method of manufacturing an organic semiconductor having a plurality of organic layer units, and is one of the vapor deposition processing lines arranged in parallel. After the substrate is transported from the inlet of the vapor deposition processing line to the outlet thereof, a first-stage organic layer unit consisting of a plurality of layers is formed on the substrate, and then the substrate is moved from the outlet of the vapor deposition processing line to the bypass line. Carried out by the articulated robot, transported the substrate by the bypass line, carried by the articulated robot to the entrance of the other vapor deposition processing line among the vapor deposition processing lines arranged in parallel, A second-stage organic layer unit composed of a plurality of layers is formed on the substrate while transporting the substrate from the inlet of the vapor deposition processing line to the outlet thereof.

  An organic semiconductor manufacturing method according to a fourth aspect of the present invention for solving the above-described problems is the method according to the first, second, or third aspect, wherein at least one of the vapor deposition treatment lines is stopped, the bypass line and the bypass mechanism. Or the articulated robot transports the substrate to a deposition process line other than the stopped deposition process line while avoiding the stopped deposition process line.

  An organic semiconductor manufacturing apparatus according to claim 5 of the present invention that solves the above-described problem is an apparatus for manufacturing an organic semiconductor having a plurality of organic layer units, and includes a plurality of layers on the substrate by conveying the substrate. A vapor deposition processing line for forming an organic layer unit is arranged in parallel, and a bypass mechanism is provided for carrying the substrate carried out from the outlet of one vapor deposition processing line into the inlet of another vapor deposition processing line. And

  An organic semiconductor manufacturing apparatus according to a sixth aspect of the present invention for solving the above-described problems is the organic semiconductor manufacturing apparatus according to the fifth aspect, wherein the vapor deposition line is located at the opposite side of the inlet and the outlet and is adjacent to the adjacent vapor deposition line. The bypass mechanism is a bypass line arranged in parallel on both sides of the deposition processing line, and is connected to the inlet and the outlet of the deposition processing line, respectively.

  An organic semiconductor manufacturing apparatus according to a seventh aspect of the present invention for solving the above-mentioned problems is characterized in that, in the sixth aspect, the bypass line freely advances or retracts the substrate at each position.

  The organic semiconductor manufacturing apparatus according to an eighth aspect of the present invention for solving the above-described problems is the organic semiconductor manufacturing apparatus according to the fifth aspect, wherein the vapor deposition line has an inlet and an outlet located on one side, and the bypass mechanism is the vapor deposition line. It arrange | positions at one side of this, It connects to the entrance and exit of the said vapor deposition processing line, respectively, It is characterized by the above-mentioned.

  An organic semiconductor manufacturing apparatus according to a ninth aspect of the present invention for solving the above-described problems is the multi-joint robot according to the fifth aspect, wherein the substrate is transported between an inlet or outlet of the vapor deposition line and the bypass mechanism. It is characterized in that a transfer chamber is disposed.

  An organic semiconductor manufacturing apparatus according to a tenth aspect of the present invention for solving the above-mentioned problems is the organic semiconductor manufacturing apparatus according to the fifth aspect, wherein the vapor deposition treatment line is located on the opposite side of the vapor deposition treatment line and is adjacent to the vapor deposition treatment line adjacent thereto. And a transfer chamber in which an articulated robot for transferring the substrate is arranged as the bypass mechanism between the inlet and the outlet of the vapor deposition processing line.

  An organic semiconductor manufacturing apparatus according to an eleventh aspect of the present invention that solves the above-described problems is that, in the fifth, sixth, seventh, eighth, ninth, or tenth aspect, a partition is provided at a connection portion between each of the deposition processing lines and the bypass mechanism. Equipped with a valve.

  An organic semiconductor manufacturing apparatus according to a twelfth aspect of the present invention that solves the above-described problems is the fifth, sixth, seventh, eighth, ninth, tenth, or eleventh aspect of the present invention, in any position of the bypass mechanism and each of the deposition processing lines. A board cooling / heating device is installed.

  An organic semiconductor manufacturing apparatus according to a thirteenth aspect of the present invention for solving the above-mentioned problems is the fifth, sixth, seventh, eighth, ninth, tenth, eleventh or twelfth aspect, wherein the vapor deposition lines are arranged in parallel in the vertical direction, The bypass mechanism is vertically installed to be a high-rise type.

  An organic semiconductor manufacturing apparatus according to a fourteenth aspect of the present invention for solving the above-described problems is the organic semiconductor manufacturing apparatus according to the fifth, sixth, seventh, eighth, ninth, tenth, eleventh, twelfth or thirteenth aspect, wherein a preliminary chamber is installed in each of the vapor deposition treatment lines It is characterized by that.

  In the present invention, during normal operation, the substrate is continuously vapor-deposited on the vapor deposition treatment line arranged in parallel via the bypass line, the bypass mechanism or the multi-joint robot, and the same vapor deposition treatment line is repeated a plurality of times. Since it does not pass, the tact time is shortened and mass production becomes possible.

Even if a certain vapor deposition line cannot be produced, the production is continued by flowing the substrate to another vapor deposition line while avoiding the bypass line, bypass mechanism or articulated robot. I can do it.
Moreover, since the total length can be shortened compared with the case where a plurality of vapor deposition lines are arranged in series, it is advantageous in terms of equipment arrangement.

  Furthermore, if the substrate passes through the same vapor deposition process line multiple times via the bypass line, bypass mechanism or articulated robot, an organic EL panel with the desired number of stages can be produced regardless of the number of stages of the vapor deposition process line. I can do it.

  In addition, when the vapor deposition line is folded and arranged, a single bypass mechanism can be provided, which contributes to a reduction in equipment costs.

  In addition, if a gate valve is provided between each vapor deposition processing line and the bypass mechanism, production can be maintained using other vapor deposition processing lines while opening the failed vapor deposition processing line to the atmosphere.

  Moreover, if a substrate cooling device is installed at an arbitrary position of the bypass mechanism and each of the vapor deposition processing lines, it is possible to suppress an increase in the temperature of the substrate on which the organic layer unit containing an organic material that is weak against heat is formed.

  In addition, if a substrate heating device is installed at an arbitrary position of the bypass mechanism and each of the vapor deposition processing lines, it is possible to maintain a constant temperature when the organic layer unit is formed on the substrate.

  Further, when the vapor deposition processing lines are arranged in parallel vertically and the bypass mechanism is installed vertically to provide a high-rise equipment arrangement, there is an advantage that the installation floor area can be reduced.

  Further, when a preliminary chamber is added to each vapor deposition processing line, there is an advantage that it is possible to cope with the case where the light emitting layer material of each stage is different.

1 and 2 show the best mode for carrying out the organic EL panel manufacturing apparatus of the present invention.
As shown in FIG. 1, n-stage multi-chamber deposition processing lines are arranged in parallel, and each deposition processing line has a charge generation layer deposition chamber 1, a hole injection layer deposition chamber 2, a hole centered on a robot chamber. The transport layer deposition chamber 3, the light emitting layer deposition chamber 4, the electron injection layer deposition chamber 5, and the AL deposition chamber 6 are arranged in an annular shape.

In each of these vapor deposition processing lines, the glass substrate is sequentially transferred to each of the vapor deposition chambers 1, 2, 3, 4, 5, 6 to form an organic layer unit composed of a plurality of layers. An organic layer unit is not restricted to this example, For example, it can be set as 3-7 layers.
Instead of the multi-chamber method shown in FIG. 1, an in-line method in which the respective vapor deposition chambers 1, 2, 3, 4, 5, 6 are linearly arranged as shown in FIG. 2 may be used.
Here, in each of the odd-numbered vapor deposition processing lines, the inlet is located on the left side in FIGS. 1 and 2, and the outlet is located on the right side in the figure. In each of the even-numbered vapor deposition processing lines, the inlet is located on the right side in FIGS. 1 and 2, and the outlet is located on the left side in the figure. That is, in adjacent vapor deposition processing lines, the inlets and the outlets are alternately arranged.

Further, bypass lines 8 and 9 are arranged in parallel on both sides of the n-stage deposition process lines arranged in parallel, and are connected to the inlet and the outlet of each deposition process line, respectively. The bypass lines 8 and 9 carry the substrate carried out from the outlet of one vapor deposition processing line into the inlet of the other vapor deposition processing line. Further, the bypass lines 8 and 9 can flow the substrate downstream (advance) and return the substrate upstream (retreat) at each position. For example, as the bypass line, a belt conveyor that can move forward or backward for each of a plurality of regions can be used.
Here, a substrate pretreatment unit 10 is disposed on the upstream side of the bypass line 8, and a substrate posttreatment unit (sealing) 11 is disposed on the downstream side thereof. A cathode vapor deposition chamber 7 is disposed immediately before the substrate post-processing section (sealing) 11.

Further, a gate valve 14 is installed between each vapor deposition treatment line and the bypass lines 8 and 9.
Therefore, by closing the gate valves 14 before and after the failed deposition processing line, only the failed deposition processing line can be opened to the atmosphere.

  In the present invention, during normal production, as indicated by arrows in FIGS. 1 and 2, the substrate carried in from the substrate pretreatment unit 10 has all the vapor deposition processing lines disposed in a ladder shape via the bypass lines 8 and 9. Are passed through the substrate post-processing section 11 to produce a predetermined number of organic EL panels. In other words, since the substrate does not pass through the same vapor deposition processing line a plurality of times, the tact time is shortened and mass production becomes possible.

In the present invention, when one deposition processing line stops, the substrate can be transferred to another deposition processing line via the bypass lines 8 and 9 without passing the substrate through the deposition processing line. .
However, if the substrate is allowed to flow downstream as it is, a predetermined n-stage vapor deposition cannot be achieved. Therefore, in order to perform a predetermined number of vapor depositions, it is necessary to perform a predetermined number of vapor depositions by returning them upstream by the bypass lines 8 and 9. is there.

For example, as shown in FIG. 3 (a), when a defect occurs in the deposition process lines after the third stage, the deposition process lines after the third stage are avoided as shown by the arrows in the figure, Film formation is continued by a two-stage vapor deposition line.
That is, the organic layer unit is formed while the substrate is transported to the right in the drawing on the first stage deposition processing line, and the substrate unloaded from the outlet is advanced to the next stage by the bypass line 9 on the right side in the drawing. The organic layer unit is formed while being transported to the inlet of the second-stage vapor deposition line, transporting the second-stage vapor deposition line to the left, and the substrate unloaded from the outlet is connected to the bypass line 8 on the left side in the figure. Then, the organic layer unit is formed in the same manner by retreating to the previous stage and repeatedly passing through the first-stage vapor deposition process line and the second-stage vapor deposition process line again.

On the other hand, as shown in FIG. 3B, when a defect occurs in the second to (n-1) -th vapor deposition processing lines, the second to (n) -1) The deposition process line of the first stage is avoided and the film formation is continued by the deposition process lines of the first and n stages.
That is, the organic layer unit is formed while the substrate is transported to the right in the drawing through the first vapor deposition processing line, and the substrate unloaded from the outlet is (n−1) stages at the bypass line 9 on the right in the drawing. The organic layer unit is formed while moving forward and carried into the entrance of the n-th vapor deposition processing line, and transporting the n-th vapor deposition processing line to the left, and the substrate unloaded from the outlet is shown on the left side of the figure. The organic layer unit is similarly formed by retreating (n−1) stages by the bypass line 8 and repeatedly passing through the first vapor deposition process line and the nth vapor deposition process line again.

Thus, by closing the gate valves 14 before and after the failed vapor deposition processing line while continuing production while reducing the production volume, it becomes possible to repair only the defective vapor deposition processing line by opening it to the atmosphere.
When the layer configuration and the film thickness of each of the n stages are substantially equal, the time for passing through each vapor deposition treatment line is almost the same, so that smooth continuous conveyance is possible without providing a buffer part. When the layer configuration and the film thickness are different, a buffer portion may be added.
When the layer configuration and film thickness of each of the n stages are different, the deposition source temperature and the deposition source shutter opening of each layer are adjusted, so that the time from substrate loading to ejection on each line can be adjusted smoothly. Continuous conveyance is possible.

  In the present invention, even if any of the vapor deposition lines does not break down, the bypass lines 8 and 9 return the substrate to the upstream or flow downstream so that any number of vapor deposition lines can be used. It is possible to manufacture an organic EL panel having a number of stages.

  Furthermore, as an effective method of using the bypass lines 8 and 9, even if a certain vapor deposition processing line becomes unusable due to a failure or the like, the equipment can be installed while reducing the production volume by flowing the substrate through the usable line several times. In this case, the substrate transfer control may be performed by intermittently loading a new substrate at a constant period in order to avoid a collision between the newly loaded substrate and the returned substrate.

The organic EL panel manufacturing apparatus according to the first embodiment of the present invention is shown in FIG.
In this embodiment, a cooling device 12 is attached to the bypass lines 8 and 9. Others are the same as the structure shown in FIG. 2, and there exists the same effect.
As an example of the cooling device 12, a cooling plate using radiation cooling can be used.

In the present embodiment, since the cooling device 12 is attached to the bypass lines 8 and 9, it is possible to suppress the temperature of the substrate that rises due to thermal radiation from the evaporation source during the vapor deposition process.
Since organic materials are generally weak against heat, it is preferable to attach a cooling device 12 to the bypass lines 8 and 9 as in this embodiment.
The cooling device 12 may be provided at an arbitrary position of the bypass lines 8 and 9, and a substrate cooling / heating device may be installed at an arbitrary position of each vapor deposition processing line.

FIG. 5 shows an organic EL panel manufacturing apparatus according to the second embodiment of the present invention.
In this embodiment, the initial investment of equipment is suppressed as much as possible, and an evaporation process line is arranged in two stages in parallel as an apparatus capable of producing an organic EL panel having a desired number of stages.
Others are the same as the structure shown in FIG. 2, and there exists the same effect.

  Therefore, during normal production, as shown by the arrows in FIG. 5, the substrate carried in from the substrate pretreatment unit 10 passes through all the vapor deposition processing lines via the bypass lines 8 and 9 continuously in a ladder shape. And it is carried out to the board | substrate post-processing part 11, and the organic electroluminescent panel of a predetermined | prescribed number of steps can be produced.

The organic EL panel manufacturing apparatus according to the third embodiment of the present invention is shown in FIG.
The present embodiment is an example of a high-rise type equipment arrangement.
That is, the vapor deposition processing lines are arranged vertically in parallel, and the bypass lines 8 and 9 are installed vertically, so that the installation floor area can be reduced.
Others are the same as the structure shown in FIG. 2, and there exists the same effect.

Accordingly, during normal production, as shown by the arrows in FIG. 6, the loaded substrate passes through all the vapor deposition processing lines continuously in a ladder shape via the bypass lines 8 and 9, and has a predetermined number of stages. Organic EL panels can be produced.
Further, when one deposition processing line stops, the substrate can be transported to another deposition processing line via the bypass lines 8 and 9 without passing the substrate through the deposition processing line.

FIG. 7 shows an organic EL panel manufacturing apparatus according to the fourth embodiment of the present invention.
In the present embodiment, a preliminary vapor deposition chamber 13 is added to each vapor deposition treatment line. The preliminary vapor deposition chamber 13 is mainly a preliminary chamber for the light emitting layer, and in this way, there is an advantage that it can cope with a case where the light emitting layer material at each stage is different.
Others are the same as the structure shown in FIG. 2, and there exists the same effect.

Therefore, during normal production, the substrate carried in from the substrate pretreatment unit 10 passes through all the vapor deposition treatment lines in a ladder shape via the bypass lines 8 and 9 and is carried out to the substrate posttreatment unit 11. Thus, an organic EL panel having a predetermined number of stages can be produced.
Further, when one deposition processing line stops, the substrate can be transported to another deposition processing line via the bypass lines 8 and 9 without passing the substrate through the deposition processing line.

FIG. 8 shows an organic EL panel manufacturing apparatus according to the fifth embodiment of the present invention.
In this embodiment, each vapor deposition treatment line is folded, and one bypass line is provided.

That is, each of the deposition processing lines arranged in n stages in parallel includes a charge generation layer deposition chamber 1, a hole injection layer deposition chamber 2, a hole transport layer deposition chamber 3, a light emitting layer deposition chamber 4, and an electron injection layer deposition chamber 5. And the AL vapor deposition chamber 6, which is turned 180 ° between the hole transport layer vapor deposition chamber 3 and the light emitting layer vapor deposition chamber 4, and the inlet and outlet of each vapor deposition treatment line are located on one side on the left side in the figure. Yes.
Here, the folding position is between the hole transport layer deposition chamber 3 and the light emitting layer deposition chamber 4 in the above, but is not limited to this, and may be folded at an arbitrary position in the deposition processing line.
On the other hand, the bypass line 8 is disposed on one side of the vapor deposition processing line and is connected to an inlet and an outlet of the vapor deposition processing line, respectively.

At the time of normal production, as indicated by an arrow in FIG. 8, the substrate passes through all of the vapor deposition processing lines continuously via the bypass line 8, so that an organic EL panel having a predetermined number of stages can be produced.
When one deposition processing line stops, the substrate can be transported to another deposition processing line via the bypass line 8 without passing the substrate through the deposition processing line.
In addition, since the predetermined number of stages of vapor deposition is performed, the predetermined number of stages of vapor deposition can be performed by returning the substrate upstream by the bypass line 8 as shown in FIG.

An organic EL panel manufacturing apparatus according to the sixth embodiment of the present invention is shown in FIGS.
In this embodiment, the vapor deposition lines 21, 22, 23, and 24 and the bypass lines 31, 32, and 33 are connected by transfer chambers 41, 42, 43, 44, and 45, and these transfer chambers 41, 42, and 43 are connected. , 44, 45, the articulated robots 51, 52, 53, 54, 55 transfer the substrate.

That is, each of the vapor deposition processing lines 21, 22, 23, and 24 arranged in a V shape in n stages includes a charge generation layer deposition chamber 1, a hole injection layer deposition chamber 2, a hole transport layer deposition chamber 3, and a light emitting layer deposition. The chamber 4, the preliminary vapor deposition chamber 13, the electron injection layer vapor deposition chamber 5, and the AL vapor deposition chamber 6 are included.
The substrate inlet and the inlet of the vapor deposition processing line 21 are connected by a transfer chamber 41, and the outlet of the vapor deposition processing line 21 and the inlet of the next vapor deposition processing line 22 are connected in a V shape by the transfer chamber 42, and the vapor deposition processing. The outlet of the line 22 and the inlet of the next deposition processing line 23 are connected in a V shape by the transfer chamber 43. Similarly, the inlet and outlet of each deposition processing line 23, 24. Further, it is connected in a V shape, and the outlet of the n-th vapor deposition line and the substrate discharge port are connected by a transfer chamber.

Further, in order to connect the V-shaped apexes, the transfer chamber 41 and the transfer chamber 43 are connected by the bypass line 31, and the transfer chamber 42 and the transfer chamber 44 are connected by the bypass line 32. The chamber 43 and the transfer chamber 45 are connected by a bypass line 33.
The vapor deposition processing lines 21 to 24 and the bypass lines 31 to 33 are substantially equal in length, and the vapor deposition treatment lines 21 to 24 and the bypass lines 31 to 33 are connected at an angle of about 60 degrees by the transfer chambers 41 to 45. .

During normal production, as shown by arrows in FIG. 10, the substrate is deposited by the transfer robots 51, 52, 53, 54, 55 in the transfer chambers 41-45 without passing through the bypass lines 31-33. 21, the vapor deposition processing line 22, the vapor deposition processing line 23, and the vapor deposition processing line 24 are successively transferred and transferred to produce an organic EL panel having a predetermined number of stages.
In addition, when any one of the vapor deposition processing lines 21 to 24 is stopped, the substrate is transferred to another vapor deposition processing line via the bypass lines 31 to 33 without passing the substrate through the vapor deposition processing line. can do.

  For example, as shown by an arrow in FIG. 11, when the vapor deposition processing line 22 is stopped, the vapor deposition processing line 22 is avoided, and the substrate is sequentially transferred from the vapor deposition processing line 21 to the vapor deposition processing line 24 via the bypass line 32. It is also possible to carry out vapor deposition in a predetermined number of stages by transferring the substrate and returning the substrate from the vapor deposition treatment line 24 to the upstream vapor deposition treatment line 23 via the bypass line 33.

An organic EL panel manufacturing apparatus according to the seventh embodiment of the present invention is shown in FIGS.
In this embodiment, articulated robots 61, 62, 63, 64... Are arranged instead of the bypass lines 8, 9 in FIG.
That is, in the vapor deposition processing line, the inlet and the outlet are located on the opposite sides, and in the adjacent vapor deposition processing line, the inlet and the outlet are alternately arranged, and the inlet and the outlet are articulated robots 61, 62, 63, 64. Are connected by transfer chambers 71, 72, 73, 74,.

During normal production, as indicated by arrows in FIG. 12, the articulated robots 61, 62, 63, 64... In the transfer chambers 71, 72, 73, 74. By transferring and transferring, an organic EL panel having a predetermined number of stages can be produced.
Further, when any one of the vapor deposition processing lines is stopped, the articulated robots 61, 62, 63, 64 in the transfer chambers 71, 72, 73, 74... Are not passed through the vapor deposition processing line. The substrate can be transferred to another vapor deposition processing line.

  For example, as indicated by an arrow in FIG. 13, when the second stage deposition process line is stopped, the second stage deposition process line is avoided, and the substrate that has passed through the first stage deposition process line is transferred to the transfer chamber. The multi-joint robot 62 in 72 is passed through the third to n-th vapor deposition processing lines, and the multi-joint robots 61, 62, 63, 64... In any one of the transfer chambers 71, 72, 73, 74. The predetermined number of stages of vapor deposition can also be performed by returning the substrate to the upstream vapor deposition processing line.

  The present invention can be applied not only to an organic EL panel manufacturing method and apparatus for manufacturing an organic EL panel, but also to a method and apparatus for manufacturing an organic solar cell and other organic semiconductors.

It is the schematic of the organic electroluminescent panel manufacturing apparatus (multi-chamber system) which concerns on a suitable aspect for implementing this invention. It is the schematic of the organic electroluminescent panel manufacturing apparatus (in-line system) which concerns on a suitable aspect for implementing this invention. In the organic EL panel manufacturing apparatus shown in FIG. 2, it is explanatory drawing which shows the flow of the board | substrate when a part of vapor deposition processing line stops. 1 is a schematic view of an organic EL panel manufacturing apparatus according to a first embodiment of the present invention. It is the schematic of the organic electroluminescent panel manufacturing apparatus which concerns on the 2nd Example of this invention. It is the schematic of the organic electroluminescent panel manufacturing apparatus which concerns on the 3rd Example of this invention. It is the schematic of the organic electroluminescent panel manufacturing apparatus which concerns on the 4th Example of this invention. It is the schematic of the organic electroluminescent panel manufacturing apparatus which concerns on the 5th Example of this invention. It is explanatory drawing which shows the flow of the board | substrate when a certain vapor deposition processing line stops one place. It is the schematic of the organic electroluminescent panel manufacturing apparatus which concerns on the 6th Example of this invention. In the organic EL panel manufacturing apparatus shown in FIG. 10, it is explanatory drawing which shows the flow of the board | substrate when a part of vapor deposition processing line stops. It is the schematic of the organic electroluminescent panel manufacturing apparatus which concerns on the 7th Example of this invention. In the organic EL panel manufacturing apparatus shown in FIG. 12, it is explanatory drawing which shows the flow of the board | substrate when a part of vapor deposition processing line stops. It is explanatory drawing of a prior art (multichamber system). It is explanatory drawing of a prior art (in-line system). It is explanatory drawing of a prior art (multistage serial in-line system).

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Charge generation layer (CGL) vapor deposition chamber 2 Hole injection layer (HIL) vapor deposition chamber 3 Hole transport layer (HTL) vapor deposition chamber 4 Light emitting layer (EML) vapor deposition chamber 5 Electron injection layer (EIL) vapor deposition chamber 6 AL vapor deposition chamber 7 Cathode deposition chamber 8 Bypass line 9 Bypass line 10 Substrate pretreatment 11 Substrate posttreatment (sealing)
12 Cooling device 13 Pre-deposition chamber (light emitting layer)
14 Gate valve 21-24 Deposition process line 31-33 Bypass line 41-45, 71-74 Transfer chamber 51-55, 61-64 Articulated robot

Claims (14)

A method of manufacturing an organic semiconductor having a plurality of stages of organic layer units, wherein a plurality of substrates are transported on the substrate while being transported from the entrance of one of the deposition processing lines arranged in parallel to the outlet thereof. After depositing the first-stage organic layer unit composed of layers, the substrate is unloaded from the outlet of one of the deposition processing lines by a bypass mechanism, and another deposition processing among the deposition processing lines arranged in parallel A second-stage organic layer unit comprising a plurality of layers is formed on the substrate while carrying the substrate from the inlet of the other vapor deposition processing line to the outlet thereof while carrying the substrate to the inlet of the line. An organic semiconductor manufacturing method. A method of manufacturing an organic semiconductor having a plurality of stages of organic layer units, wherein a plurality of substrates are transported on the substrate while being transported from the entrance of one of the deposition processing lines arranged in parallel to the outlet thereof. After depositing the first-stage organic layer unit composed of layers, the substrate is unloaded from the outlet of one of the deposition processing lines by an articulated robot, and another deposition among the deposition processing lines arranged in parallel Carrying into the inlet of the processing line, and further forming a second-stage organic layer unit comprising a plurality of layers on the substrate while transporting the substrate from the inlet of the other vapor deposition processing line to the outlet thereof. An organic semiconductor manufacturing method. A method of manufacturing an organic semiconductor having a plurality of stages of organic layer units, wherein a plurality of substrates are transported on the substrate while being transported from the entrance of one of the deposition processing lines arranged in parallel to the outlet thereof. After forming the first-stage organic layer unit consisting of layers, the substrate is unloaded from the outlet of the one deposition process line to the bypass line by an articulated robot, and the substrate is transported by the bypass line, The multi-joint robot carries in the other vapor deposition processing line arranged in parallel by an articulated robot, and further transports the substrate from the other vapor deposition processing line to the outlet thereof on the substrate. A method for producing an organic semiconductor, comprising: forming a second-stage organic layer unit comprising a plurality of layers. When at least one of the vapor deposition process lines is stopped, the bypass line, the bypass mechanism or the articulated robot avoids the stopped vapor deposition process line and the vapor deposition process lines other than the stopped vapor deposition process line. 4. The method of manufacturing an organic semiconductor according to claim 1, wherein the substrate is transported to the substrate. An apparatus for producing an organic semiconductor having a plurality of organic layer units, wherein a vapor deposition processing line for transporting a substrate and forming an organic layer unit composed of a plurality of layers on the substrate is disposed in parallel and An organic semiconductor manufacturing apparatus provided with a bypass mechanism for carrying in the substrate carried out from the outlet of the vapor deposition processing line to the inlet of another vapor deposition processing line. In the vapor deposition processing line, the inlet and the outlet are located on opposite sides, and in the adjacent vapor deposition processing line, the inlet and the outlet are alternately arranged, and the bypass mechanism is arranged in parallel on both sides of the vapor deposition processing line. The organic semiconductor manufacturing apparatus according to claim 5, wherein the organic semiconductor manufacturing apparatus is a bypass line and is connected to an inlet and an outlet of the vapor deposition line. The organic semiconductor manufacturing apparatus according to claim 6, wherein the bypass line freely moves the substrate forward or backward at each position. The vapor deposition treatment line has an inlet and an outlet located on one side, and the bypass mechanism is disposed on one side of the vapor deposition treatment line and is connected to the inlet and the outlet of the vapor deposition treatment line, respectively. Item 6. The organic semiconductor manufacturing apparatus according to Item 5. 6. The organic semiconductor manufacturing apparatus according to claim 5, wherein a transfer chamber in which an articulated robot for transferring the substrate is disposed is interposed between an inlet or outlet of the vapor deposition processing line and the bypass mechanism. . In the vapor deposition processing line, the inlet and the outlet are located opposite to each other, and in the adjacent vapor deposition processing line, the inlet and the outlet are alternately arranged, and as the bypass mechanism between the inlet or the outlet of the vapor deposition processing line, 6. The organic semiconductor manufacturing apparatus according to claim 5, further comprising a transfer chamber in which an articulated robot for transferring the substrate is disposed. The organic semiconductor manufacturing apparatus according to claim 5, 6, 7, 8, 9 or 10, wherein a gate valve is provided at a connection portion between each of the vapor deposition processing lines and the bypass mechanism. The organic semiconductor manufacturing apparatus according to claim 5, wherein a substrate cooling / heating device is installed at an arbitrary position of the bypass mechanism and each of the vapor deposition processing lines. The organic material according to claim 5, 6, 7, 8, 9, 10, 11 or 12, wherein the vapor deposition lines are vertically arranged in parallel and the bypass mechanism is vertically installed to form a high-rise type. Semiconductor manufacturing equipment. 14. The organic semiconductor manufacturing apparatus according to claim 5, 6, 7, 8, 9, 10, 11, 12, or 13, wherein a preliminary chamber is installed in each of the vapor deposition processing lines.

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