JP2007227614A - Information control method, information control system, program, recording medium, pattern tester, and board tester - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an information control method, information control system, program, recording medium, pattern tester, and substrate tester which improve the yield of the device production. <P>SOLUTION: In the event of an abnormity in a wafer test, an aligner examines the reticle on a corresponding part to an abnormal region to send the result to an analyzer. It takes correlation of the abnormal of a wafer to the abnormal part of the reticle to decide whether the reticle causes the abnormity of the wafer. If the abnormity of the wafer is caused by a foreign matter on the reticle, the matter is removed, or if caused by the defect of the reticle pattern, the reticle is replaced. Or, if needed, the abnormity criterion level of the reticle test is adjusted. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an information management method, an information management system, a program, a recording medium, a pattern inspection apparatus, and a substrate inspection apparatus. More specifically, for example, an image sensor such as a semiconductor element, a liquid crystal display element, and a CCD (Charge Coupled Device). The present invention relates to an information management method, an information management system, a program, a recording medium, a pattern inspection apparatus, and a substrate inspection apparatus for managing information related to a photolithography process for manufacturing a thin film magnetic head or the like.

  Conventionally, in a device manufacturing process, the pattern formation state of a substrate on which a device pattern is formed is inspected using an inspector. If an abnormality such as a defect is recognized in the device pattern formed on the substrate in this inspection, the cause of the abnormality is identified and removed in a series of processes in the device manufacturing process. However, trial and error work is required until the cause of the device pattern abnormality is identified, and a considerable amount of time is required until the cause is removed.

  Also, in such inspection, if the detection sensitivity of the inspector is increased, defects in almost all patterns can be detected, but they are not defects, but they are detected as defects due to slight narrowing of the pattern line width. A large number of detected pseudo defects (pseudo defects) and fine defects that are defects but do not substantially affect the yield are detected. In such a case, after detecting the defect, it is necessary to select a defect that does not affect the pseudo-defect or the yield and a defect that should be detected, and it takes a considerable time to select the defect. It was.

  On the other hand, in lithography technology, OPC (Optical Proximity Correction) masks that are designed with optical proximity effects in mind as part of super-resolution technology (Resolution Enhancement Technology) to meet the demand for device pattern miniaturization. In addition, a phase shift mask that uses a light phase difference to increase the pattern contrast on the image plane is adopted. In OPC masks and phase shift masks, patterns are becoming more complicated, and improvement in defect detection sensitivity for such complicated patterns and reduction in defect inspection time are required.

Japanese Patent No. 3128876

  According to a first aspect of the present invention, there is provided a substrate inspection apparatus for inspecting a substrate on which a pattern is transferred, and the information processing apparatus, wherein a pattern inspection apparatus for inspecting a pattern and an information processing apparatus are connected so as to be able to transmit information A connection step for connecting information to the apparatus so that information can be transmitted; and a collection step for collecting information relating to inspection contents of the pattern inspection apparatus and information relating to inspection contents of the substrate inspection apparatus using the information processing apparatus; A management step of managing the collected information using the information processing apparatus.

  From a second viewpoint, the present invention provides a pattern inspection apparatus that inspects a pattern transferred onto a substrate; a substrate inspection apparatus that inspects a substrate to which the pattern is transferred; and the pattern inspection apparatus and the substrate inspection apparatus. And information processing device that is connected to be able to communicate information, and that collects information relating to inspection contents of the pattern inspection apparatus and information relating to inspection contents of the substrate inspection apparatus, and manages the collected information System.

  According to a third aspect of the present invention, a procedure for collecting information on inspection contents from a pattern inspection apparatus for inspecting a pattern, and information on inspection contents from a substrate inspection apparatus for inspecting a substrate on which the pattern is transferred are collected. A program for causing a computer to execute a procedure and a procedure for managing information collected from the pattern inspection apparatus and information collected from the substrate inspection apparatus.

  According to these, because it collects information on the inspection content of the substrate defect inspection that directly affects the yield and information on the inspection content of the pattern defect inspection that can detect the defect in advance, they are integrated and managed, It becomes possible to construct an environment for quickly detecting defects that can directly affect the yield. As a result, device productivity is improved.

  From a fourth viewpoint, the present invention is a recording medium for recording the program of the present invention so as to be readable by a computer system. In such a case, it is possible to cause the computer to execute any of the programs of the present invention, and it is possible to efficiently perform an inspection directly related to the yield.

  According to a fifth aspect of the present invention, there is provided a pattern inspection apparatus for inspecting a pattern transferred onto a substrate, and receiving information relating to inspection contents in the substrate inspection apparatus for inspecting a substrate having the pattern transferred thereon. The pattern inspection apparatus includes a receiving device and optimizes the substrate inspection method based on the correlation between the information regarding the pattern inspection and the information regarding the inspection contents of the substrate inspection apparatus.

  According to this, it is possible to inspect the substrate having a correlation with the pattern inspection, and it is possible to realize the substrate inspection directly related to the yield.

  According to a sixth aspect of the present invention, there is provided a pattern inspection apparatus for inspecting a pattern transferred onto a substrate, and receiving information relating to inspection contents in the substrate inspection apparatus for inspecting a substrate having the pattern transferred thereon. The pattern inspection apparatus includes a receiving device and optimizes the substrate inspection method based on the correlation between the information regarding the pattern inspection and the information regarding the inspection contents of the substrate inspection apparatus.

  According to this, it is possible to inspect a pattern having a correlation with the inspection of the substrate, and it is possible to realize a pattern inspection that is directly related to the yield.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 shows a schematic configuration of a device manufacturing processing system according to an embodiment of the present invention. As shown in FIG. 1, a device manufacturing processing system 1000 is a system constructed in a device manufacturing factory for processing semiconductor wafers and manufacturing micro devices. As shown in FIG. 1, the device manufacturing processing system 1000 includes an exposure apparatus 100, a track 200 disposed adjacent to the exposure apparatus 100, a management controller 160, an analysis apparatus 500, and a host system 600. And a device manufacturing processing apparatus group 900.

  The exposure apparatus 100 is an apparatus that transfers a device pattern to a wafer coated with a photoresist. The exposure apparatus 100 includes an illumination system that emits exposure illumination light, a stage that holds a reticle on which a device pattern illuminated by the illumination light is formed, and both sides that project a device pattern illuminated by the exposure illumination light. A telecentric projection optical system, a stage (not shown) for holding a wafer to be exposed, and a control system for overall control of these stages are provided.

  Illumination light from the illumination system is applied to a part of the reticle held on the reticle stage. This irradiation area is defined as an illumination area. A device pattern including a circuit pattern and the like is formed on the reticle. The illumination light passing through the illumination area is incident on a part of the exposed surface (wafer surface) of the wafer held on the stage via the projection optical system, and a projection image of the device pattern in the illumination area is formed there. The This area on the wafer is defined as an exposure area. Photoresist is applied to the wafer surface, and the pattern of the projected image is transferred to a portion corresponding to the exposure area.

  Here, consider an XYZ coordinate system in which the coordinate axis parallel to the optical axis of the projection optical system is the Z axis. The stage holding the wafer can move on the XY plane and adjust the wafer surface in the Z-axis direction shift, θx (rotation axis about the X axis) direction, and θy (rotation axis about the Y axis) direction. It is possible. The stage holding the reticle can move in the XY plane in synchronization with the stage holding the wafer.

  By synchronous scanning in accordance with the projection magnifications of the projection optical systems of both stages, the wafer surface passes through the exposure area in synchronization with the device pattern on the reticle passing through the illumination area. As a result, the entire device pattern on the reticle is transferred to a partial area (shot area) on the wafer surface. The exposure apparatus 100 transfers the device pattern on the reticle to a plurality of shot areas on the wafer by repeating the above-described relative synchronous scanning of both stages and stepping of the stage holding the wafer with respect to the exposure illumination light. ing. That is, the exposure apparatus 100 is a scanning exposure (step-and-scan) type exposure apparatus.

  The control system of the exposure apparatus 100 includes an exposure amount control system that controls the intensity (exposure amount) of illumination light, synchronous control of both stages, and autofocus / leveling that matches the wafer surface within the depth of focus of the projection optical system. A stage control system that performs control (hereinafter simply referred to as focus control) and the like, and a lens control system that controls a movable lens element of the projection optical system are provided.

  The exposure amount control system performs feedback control for controlling the exposure amount to match the target value based on detection values of various exposure amount sensors capable of detecting the exposure amount.

  In the following, among the stage control systems, a control system that performs synchronous control of both stages is referred to as a synchronous control system, and a control system that controls the rotation of the stage position (wafer surface) around the Z position, the X axis, and the Y axis. The focus control system will be described. The stage control system performs position control and speed control of both stages by performing feedback control based on the measurement value of the interferometer that measures the position of the stage under the XYZ coordinate system. The exposure apparatus 100 is provided with a multipoint AF (autofocus) sensor that detects a focus / leveling shift on the wafer surface at a plurality of detection points. The stage control system detects the wafer surface height from, for example, nine detection points (9 channels) among the plurality of detection points of the multipoint AF sensor, and displays the wafer surface corresponding to the exposure area on the image of the projection optical system. Focus control is realized by performing feedback control that matches the surface.

  The projection optical system is an optical system including a plurality of, for example, about 10 to 20 refractive optical elements (lens elements). Among these lens elements, for example, five lens elements on the object plane side (reticle side) are movable lenses that can be driven from the outside by a control system. These lens elements are held in the lens barrel via respective double structure lens holders (not shown). These lens elements are respectively held by the inner lens holders, and these inner lens holders are supported with respect to the outer lens holder at three points in the direction of gravity by a driving element (not shown) such as a piezo element. Then, by independently adjusting the voltages applied to these drive elements, each lens element is driven to shift in the X-axis, Y-axis, and Z-axis (optical axis) directions, and the rotational directions (θx around each axis). , Θy, θz) can be rotationally driven, that is, can be driven with six degrees of freedom.

  Other lens elements are held by the lens barrel via a normal lens holder. Note that any number of movable lens elements may be provided. The lens control system monitors the atmospheric pressure, the temperature in the chamber of the exposure apparatus 100, the exposure amount, and the temperature of the lens of the projection optical system. Based on the monitoring result, the magnification variation amount and the focus variation amount of the projection optical system are calculated. Based on the calculated amount of fluctuation, the best focus position and the magnification are controlled to follow the target value by adjusting the atmospheric pressure inside the projection optical system and adjusting the lens interval.

[Control system parameters]
In the exposure apparatus 100, several factors defining the operation of each control system are parameterized, and these values can be freely set within an appropriate range. Control system parameters are roughly classified into adjustment system parameters that require device adjustment by temporarily stopping the process when changing the set values, and non-adjustment system parameters that do not require device adjustment.

  Some representative examples of the adjustment system parameters will be described. First, in relation to the exposure amount control system, there are an adjustment parameter of an exposure amount sensor (not shown) for detecting the exposure amount, an adjustment parameter of an illuminance measurement sensor (not shown) for measuring the intensity of illumination light on the wafer surface, and the like. . In addition, for synchronous control systems, parameters such as coefficient values of correction functions for moving mirror bending correction provided on both stages to reflect the laser beam from the interferometer for stage position measurement, and feedback control Position loop gain, velocity loop gain, integration time constant, etc.

  As for the focus control system, focus offset, which is an offset adjustment value for focus control when aligning the wafer surface at the time of exposure with the best imaging surface by the projection optical system, and the best of the wafer surface at the time of exposure and the projection optical system. Leveling adjustment parameters for matching the image plane, the linearity of the position detection element (PSD) that is the sensor of each detection point of the multipoint AF sensor, the offset between sensors, the detection reproducibility of each sensor, the offset between channels, There are AF beam irradiation position (ie, detection point) on the wafer, other parameters related to AF surface correction, and the like. In addition, regarding lens control systems, there are focus offset and internal lens interval adjustment parameters. All of these adjustment system parameter values need to be adjusted by calibration or trial operation of the apparatus.

  Next, some representative examples of the non-adjustment system parameters will be described. First, in relation to the exposure amount control system, for example, there are parameters related to selection of ND filters in the illumination system and exposure amount target values. Further, as for the synchronization control system, for example, there is a scanning speed. In the focus control system, for example, the focus sensor selection state for nine channels in the multi-point AF sensor, a focus step correction map-related parameter described later, the fine adjustment amount of the focus offset, and the scan direction in the edge shot of the wafer outer edge and so on. As for the lens control system, there are atmospheric pressure adjustment parameters inside the projection optical system. These parameter setting values are parameters that can be changed without calibrating the apparatus, and are often specified by the exposure recipe. Note that the ND filter is selected based on the result of an average power check that is performed only once with an exposure amount target value set appropriately (for example, at a minimum) at the start of exposure on a certain wafer. Depending on the selection of the ND filter, the scan speed is also finely adjusted to some extent.

  The line width and transfer position of the device pattern transferred and formed on the wafer are deviated from the design values due to exposure control, synchronization accuracy, focus, and lens control errors. Therefore, in the exposure apparatus 100, time-series data of control amounts (exposure amount trace data) related to the exposure amount error obtained from the exposure amount control system, and time series of control amounts related to the synchronization accuracy error obtained from the synchronization control system. Data (synchronization accuracy trace data), time-series data of control amount related to focus error obtained from the focus control system (focus trace data), control amount related to lens control error obtained from the lens control system of the projection optical system Time series data (lens trace data) is logged, and these data are used for analysis and evaluation of pattern line width and the like.

  Further, in the exposure apparatus 100, when the device pattern on the wafer has already been transferred, it is necessary to align the wafer in order to expose the reticle pattern on the device pattern. This process is called wafer alignment. The exposure apparatus 100 also logs data relating to the processing contents of the wafer alignment, and uses these data for analysis and evaluation such as device pattern overlay accuracy.

  Furthermore, wavefront aberration exists in the projection optical system. Due to this wavefront aberration, the wavefront of the parallel light flux passing through the projection optical system deviates from the ideal wavefront. This deviation of the wavefront causes a positional deviation of the imaging position on the image plane of light generated from one point on the object surface. The exposure apparatus 100 is also provided with a function for adjusting the wavefront aberration by driving the movable lens element.

  The wavefront aberration of the projection optical system can be expressed by Seidel aberration or Zernike polynomials. Among them, the Zernike polynomial is suitable for expressing wavefront aberration of higher order components. The Zernike polynomial is a real polynomial related to the pupil coordinates (ρ, θ) of the projection optical system, as shown by the following equation.

ツェルニケ多項式は、直交系であるから、各項の係数Ｚ_iを独立に決定することができる。ｉを適当な値で切ることはある種のフィルタリングを行うことに対応する。なお、一例として第１項〜第３７項までのｆ_i（ｆ_i（ρ，θ）：動径ρ、角度θを独立変数とする動径多項式）を係数Ｚ_iとともに例示すると、次の表１のようになる。但し、表１中の第３７項は、実際のツェルニケ多項式では、第４９項に相当するが、本明細書では、ｉ＝３７の項（第３７項）として取り扱うものとする。すなわち、本発明において、ツェルニケ多項式の項の数は、特に限定されるものではない。

Since the Zernike polynomial is an orthogonal system, the coefficient Z _i of each term can be determined independently. Cutting i by an appropriate value corresponds to performing some kind of filtering. As an example, f _i (f _i (ρ, θ): radial polynomial having radial ρ, angle θ as an independent variable) from the first term to the 37th term together with the coefficient Z _i is shown in the following table. It becomes like 1. However, the 37th term in Table 1 corresponds to the 49th term in the actual Zernike polynomial, but is treated as a term of i = 37 (the 37th term) in this specification. That is, in the present invention, the number of terms of the Zernike polynomial is not particularly limited.

ツェルニケ多項式のそれぞれの項は光学収差に対応する。しかも低次の項(ｉの小さい項)は、ザイデル収差にほぼ対応する。例えば、ツェルニケ係数Ｚ₇、Ｚ₈（Ｚ₇、Ｚ₈は直交関係）は、３次のコマ収差に対応し、Ｚ₁₄、Ｚ₁₅は、５次のコマ収差に対応する。これらのコマ収差は、動径多項式が奇関数であるので、奇関数収差とも呼ばれている。ウエハ上に形成される像面では、パターンの横ずれ、焦点深度の低減、パターン非対称性の原因となる。また、ツェルニケ係数Ｚ₄は、フォーカスに対応し、Ｚ₉は、４次の球面収差に対応する。これらの収差は、動径多項式が偶関数であるので偶関数収差とも呼ばれている。

Each term in the Zernike polynomial corresponds to an optical aberration. Moreover, the low-order terms (terms with a small i) substantially correspond to Seidel aberration. For example, Zernike coefficients Z ₇ and Z ₈ (Z ₇ and Z ₈ are orthogonal) correspond to third-order coma, and Z ₁₄ and Z ₁₅ correspond to fifth-order coma. These coma aberrations are also called odd function aberrations because the radial polynomial is an odd function. In the image plane formed on the wafer, it causes a lateral shift of the pattern, a reduction in the depth of focus, and a pattern asymmetry. The Zernike coefficient Z ₄ corresponds to the focus, and Z ₉ corresponds to the fourth-order spherical aberration. These aberrations are also called even function aberrations because the radial polynomial is an even function.

  As described above, the wavefront aberration of the projection optical system can be obtained by using this Zernike polynomial. The Zernike polynomial can be said to be suitable for evaluating the aberration of the projection optical system because the aberration amount at an arbitrary position on the image plane can be handled independently of the position coordinates. When the movable lens element is driven by the control of the control system, the magnitude of the wavefront aberration of the projection optical system, that is, the aberration from the first term to the 37th term of the Zernike coefficient changes. When the magnitudes of the aberrations from the first term to the 37th term change, the imaging performance sensitive to the aberration of each term changes. Since this wavefront aberration is different at each point in the exposure region (image surface), the change state of the imaging performance in the exposure region is also different for each point. The lens element needs to be driven so that the imaging characteristics in the exposure area are as uniform as possible, that is, the wavefront aberration in the exposure area IA is as uniform as possible.

  The illumination system can finely adjust the wavelength of the illumination light for exposure under the control of the control system. The exposure apparatus 100 is also provided with an uneven illuminance sensor (not shown).

  The control system is a computer system that controls various components of the exposure apparatus 100 as described above. The control system is connected to a communication network constructed in the device manufacturing processing system, and data can be transmitted / received to / from the outside via the communication network.

  Incidentally, in the exposure apparatus 100, an OPC mask or a phase shift mask can be adopted as the reticle.

<OPC mask>
The OPC mask is a mask using an optical proximity correction method (Optical Proximity Correction: OPC). Even if a normal mask is simply miniaturized, an exposure pattern abnormality may occur due to an insufficient light amount in a fine pattern or an influence of light from an adjacent pattern. This phenomenon is called the optical proximity effect. In order to prevent these phenomena, a technique of adding a small figure to the corner of the mask pattern or changing the pattern size of a dense part and a rough part is an optical proximity correction method (Optical Proximity Correction: OPC). . In the OPC mask, for example, a step called a jog is created at the edge of the pattern, and the length and size of the jog are adjusted so that the shape of the exposure pattern on the wafer is close to the shape of the design pattern.

<Phase shift mask>
The phase shift mask is, for example, a mask that gives a phase difference of 180 ° to transmitted light by using a transmissive portion of the mask pattern different from the adjacent transmissive portion. Therefore, in the pattern light-shielding portion, the diffracted transmitted lights having different phases by 180 ° cancel each other and the light intensity decreases, and as a result, the pattern contrast on the image plane is improved. As the phase shift mask, for example, there are various types such as a Levenson type (substrate digging type, double digging type, shifter type), auxiliary pattern type, rim type, half tone type, and chrome-less type.

  Employing an OPC mask or a phase shift mask is one of super-resolution techniques, and by using these masks, a pattern to be transferred and formed on the wafer surface can be miniaturized. However, when these masks are employed, the contents of defects formed in the masks are diversified. For example, in the OPC mask, defects that occur remarkably include shape defects such as pinholes and protrusions, foreign matter, and pattern misalignment and size misalignment. In addition to the above-described defects (defects of the OPC mask), it is necessary to consider transmittance and phase difference deviation as defects generated in the phase shift mask. Therefore, in comparison with the case of using a normal mask, when an OPC mask or a phase shift mask is used, an inspection device that inspects defects is required to have an inspection capability corresponding to diversifying mask defects.

  The exposure apparatus 100 is provided with two stages for holding a wafer. Subsequent processed wafers are alternately loaded on both stages and sequentially exposed. In this way, while performing exposure on a wafer held on one stage, it is possible to load the wafer onto the other stage and perform alignment or the like. Throughput is improved compared to repeated wafer exchange → alignment → exposure. In FIG. 1, a portion that performs scanning exposure on a wafer held on one stage is shown as a processing unit 1, and a portion that performs scanning exposure on a wafer held on the other stage is called a processing unit 2. Show.

[Reticle inspection device]
In the exposure apparatus 100, a reticle inspector 130 for inspecting a reticle used for exposure before holding it on the stage is provided. The reticle inspector 130 detects the presence / absence of foreign matter adhering to the reticle device pattern and the defect of the device pattern. First, the reticle inspector 130 scans the device pattern of the reticle with a laser, detects the reflected light or scattered light, and detects a foreign substance on the device pattern by changing the intensity of the reflected light or scattered light. In addition, reticle inspection device 130 images a device pattern illuminated by illumination light, and detects a pattern defect based on the imaging result. As an image of a device pattern, it is possible to acquire imaging data based on light transmitted through the pattern and imaging data based on light reflected from the pattern. Here, the reticle inspector may be connected outside the exposure apparatus 100.

  The reticle inspector 130 includes an information processing apparatus that determines the presence or absence of a foreign matter or a defect on a device pattern (that is, detects an abnormality) based on the detection result of reflected light or scattered light or the imaging result of the device pattern. ing. In addition to the above-described abnormality detection, this information processing apparatus detects the position of the location where the abnormality is detected, the type of abnormality (foreign matter or defect), the size of the abnormal part, the number of occurrences of abnormality, and the like. These detection results, raw measurement data corresponding to detection signals of reflected light and scattered light, imaging signals of patterns, and the like are stored in a storage device (not shown) in the reticle inspector 130. This information processing apparatus is connected to an external communication network, and can transmit and receive data (including the measurement raw data) with an external apparatus.

[truck]
The track 200 is disposed in contact with a chamber (not shown) surrounding the exposure apparatus 100. The track 200 mainly carries in and out the wafers with respect to the exposure apparatus 100 by a transfer line provided inside.

[Coater / Developer]
In the track 200, a coater / developer (C / D) 110 for applying and developing a resist is provided. The C / D 110 applies and develops a photoresist on the wafer. The C / D 110 can observe these processing states and record the observation data as log data. Examples of observable processing states include resist coating film thickness uniformity, development module processing, PEB (Post-Exposure-Bake) temperature uniformity (hot plate temperature uniformity), wafer heating history management (after PEB processing) There are various states of avoiding over-baking and cooling plate). The processing state of the C / D 110 can also be adjusted to some extent by setting the device parameters. Such apparatus parameters include, for example, parameters related to uneven application of resist on the wafer, for example, apparatus parameters such as set temperature, wafer rotation speed, resist drop amount and drop interval.

  The C / D 110 can operate independently of the exposure apparatus 100 and the wafer inspector 120. The C / D 110 is disposed along the transport line of the track 200. Therefore, the wafer can be transferred between the exposure apparatus 100 and the C / D 110 by this transfer line. Further, the C / D 110 is connected to a communication network in the device manufacturing processing system 1000, and can send and receive data to and from the outside. For example, the C / D 110 can output information on the process (information such as the trace data).

[Wafer inspection machine]
In the track 200, a composite wafer inspection device 120 capable of performing various measurement inspections on the wafer before and after the exposure of the wafer by the exposure apparatus 100 (that is, before and after) is provided. Wafer inspection device 120 can operate independently of exposure apparatus 100 and C / D 110. The wafer inspection device 120 performs a pre-measurement inspection process for performing measurement before exposure and a post-measurement inspection process for performing measurement after exposure.

  In the pre-measurement inspection process, before the wafer is transferred to the exposure apparatus 100, inspection for foreign matter on the wafer, inspection of the resist film on the wafer, and measurement for optimizing the exposure conditions in the exposure apparatus 100 are performed. The measurement target of the pre-measurement / inspection process includes the surface shape of the wafer before exposure. The wafer inspector 120 can output the results of the pre-measurement inspection to the outside via a communication network in the system.

  On the other hand, the post-measurement / inspection device of the wafer inspection device 120 has a line width such as a resist pattern on the wafer after exposure (post-event) transferred by the exposure apparatus 100 and developed by the C / D 110, an overlay error, and a projection optical system. Wavefront aberration and illumination unevenness are measured, and wafer film inspection, wafer defect / foreign particle inspection, etc. are performed. Here, the wafer film inspection includes inspection of the film thickness, film thickness unevenness, film defect, foreign matter, scratch, etc. of the film formed on the wafer.

  The wafer inspection device 120 can also measure the relative positional deviation amount of the aberration measurement mark on the exposed test wafer for measuring the aberration of the projection optical system of the exposure apparatus 100.

  Also, the measurement state of the wafer inspector 120 (for example, data that affects measurement errors such as alignment such as residual components when aligning the wafer for measurement) is recorded as log data. Be able to. This log data can also be output to the outside via a communication network. Further, the wafer inspection device 120 can also adjust its measurement state to some extent by setting the apparatus parameters within an allowable range. Such apparatus parameters include, for example, parameters related to wafer alignment, which are preconditions for measurement, parameters relating to the focus state of the sensor, selection of wafers to be measured, and parameters relating to selection of measurement shots.

  Note that the processing units 1 and 2 are also provided in the C / D 110 and the wafer inspector 120 so that the processing time can be shortened.

  Wafer inspection device 120 is arranged along the transfer line of track 200. Therefore, this transfer line enables wafer transfer between the exposure apparatus 100, the C / D 110, and the wafer inspection device 120. That is, the exposure apparatus 100, the track 110, and the wafer inspector 120 are connected in-line with each other. Here, the in-line connection means that the apparatuses and the processing units in each apparatus are connected via a transfer device that automatically transfers a wafer such as a robot arm or a slider. By this in-line connection, the wafer transfer time among the exposure apparatus 100, the C / D 110, and the wafer inspection device 120 can be remarkably shortened.

  The exposure apparatus 100, the track 110, and the measuring instrument 120 that are connected in-line can be regarded as one substrate processing apparatus (100, 110, 120) as a whole. A substrate processing apparatus (100, 110, 120) is a coating process for coating a wafer with a photosensitive agent such as a photoresist, and an exposure process for projecting and exposing an image of a reticle pattern on the wafer coated with the photosensitive agent. Then, a developing process for developing the wafer after the exposure process and a measurement / inspection process for the reticle and wafer are performed. These steps will be described later.

  In the device manufacturing processing system 1000, a plurality of exposure apparatuses 100, tracks 110, and wafer inspection devices 120 (that is, substrate processing apparatuses (100, 110, 120)) are provided. Each substrate processing apparatus (100, 110, 120) and device manufacturing processing apparatus group 900 is installed in a clean room in which temperature and humidity are controlled. In addition, data communication can be performed between devices via a predetermined communication network (for example, LAN: Local Area Network). This communication network is a so-called intranet communication network provided for a customer's factory, business office or company.

  In the substrate processing apparatus (100, 110, 120), a plurality of wafers (for example, 20 wafers) are processed as one unit (referred to as a lot). In the device manufacturing processing system 1000, wafers are processed and processed as a basic unit of one lot. Therefore, the wafer process in the device manufacturing processing system 1000 is also referred to as lot processing.

  In this device manufacturing processing system 1000, the wafer inspection device 120 is placed in the track 200 and connected in-line with the exposure apparatus 100 and the C / D 110. However, the wafer inspection device 120 is disposed outside the track 200. The exposure apparatus 100 and the C / D 110 may be configured offline.

  As hardware for realizing the information processing apparatus in the wafer inspection device 120 described above, for example, a personal computer can be employed. In this case, it is realized by executing a program executed by a CPU (not shown) of the information processing apparatus. The analysis program is supplied by a medium (information recording medium) such as a CD-ROM and is executed in a state where it is installed in the PC.

[Analyzer]
The analysis apparatus 500 is an apparatus that operates independently of the exposure apparatus 100 and the track 200. The analysis apparatus 500 is connected to a communication network in the device manufacturing processing system 1000, and can send and receive data to and from the outside. The analysis apparatus 500 collects various data (for example, processing contents of the apparatus) from various apparatuses via the communication network, and analyzes data related to processes on the wafer. As hardware for realizing such an analysis apparatus 500, for example, a personal computer can be employed. In this case, the analysis process is realized by executing an analysis program executed by a CPU (not shown) of the analysis apparatus 500. This analysis program is supplied by a medium (information recording medium) such as a CD-ROM and is executed in a state installed in a PC.

  The analysis apparatus 500 optimizes the processing conditions of the substrate processing apparatus (100, 110, 120) based on log data of the exposure apparatus 100, pre-measurement result data of the wafer inspector 120, and the like. Here, the processing conditions to be optimized differ depending on the comparison result. Various parameters of the exposure apparatus 100 such as the control system parameters of the exposure apparatus 100, the driving amount of the lens element of the projection optical system, There are a variety of processing contents such as C / D 110 and wafer inspection device 120. When the parameter is optimized, the analysis device 500 stores various databases such as a CD table group for estimating the line width, a wavefront aberration change table, and an imaging performance change table stored in an internal storage device. Refer to These databases will be described later. In the database of the analysis apparatus 500, an imaging performance error allowable value input via the man-machine interface is also registered in advance.

The CD table group is a table group showing the relationship between the pattern line width and the exposure amount, synchronization accuracy, focus, and lens control errors. FIG. 2 schematically shows an example of the CD table group 552. As shown in FIG. 2, this table group includes an index table 51 and several table groups 52. In the index table 51, five representative values out of −0.1 to 0.1 mJ / cm ² are designated as representative values of the exposure amount control error (exposure amount error). Four representative values of 0.00 to 0.03 μm are designated as representative values of (synchronization accuracy error). In the index table 51, a moving average within a predetermined period is adopted as the exposure amount error, and a moving standard deviation within the predetermined period is adopted as the synchronization accuracy error. The synchronization accuracy error (moving standard deviation) is usually represented by √ ((synchronization accuracy X _MSD ) ² + (synchronization accuracy Y _MSD ) ² + (synchronization accuracy θ _MSD × image height) ² ). Depending on the direction, etc., unnecessary terms of XYθ may be removed. In both cases, statistical values having a high influence on the line width are adopted. Here, the predetermined period is a period from when the slit-shaped exposure region reaches a certain point on the wafer until it is removed by relative scanning of the stage holding the wafer and the stage holding the reticle.

Each cell of the index table 51, any of the table name of the table group that corresponds to the combination of the representative value (T ₁₁ ~T ₅₄₎ is registered. In the plurality of table groups 52, tables each showing a relationship between a Z average offset Z _MEAN and a Z movement standard deviation Z _MSD as statistical values of focus control errors and line width values are prepared. Here, Z _MEAN is a moving average value of the focus control error within the predetermined period (exposure slit passing period), and Z _MSD is a moving standard deviation of the focus control error within the predetermined period. . More precisely, the Z average offset Z _MEAN and the Z movement standard deviation Z _MSD are the Z of the wafer surface from the focus target position based on the device topography of the wafer surface while the exposure slit passes through the portion of the pattern. This is the deviation of the direction and the inclination direction, that is, the moving average and moving standard deviation of the total focus control error in those directions. Even in the same Z _MEAN and Z _MSD , the line width value (CD value) at that time differs for each image height (coordinate axis direction orthogonal to the scanning direction). A table is prepared for each representative value (f _{0 to} f _M ).

Based on the exposure amount trace data, the synchronization accuracy trace data, the focus trace data, and the lens trace data acquired from the exposure apparatus 100, the analysis apparatus 500 calculates the statistics of each control error at a certain point (sample point) on the wafer. Calculate the value. Then, the analysis apparatus 500 refers to the index table 51 and selects a table group corresponding to representative values close to those values from the table groups T _{11 to} T ₅₄ based on the exposure amount error and the synchronization accuracy error. To do. For example, assuming that the exposure error is −0.07 and the synchronization accuracy error is 0.005, four table groups T ₁₁ and T ₁₂ registered in the cell corresponding to the combination of representative values in the vicinity of that value. , T ₂₁ , T ₂₂ are selected.

A method for calculating the CD value when four table groups are selected will be described. As a premise, among the representative values of the exposure amount errors corresponding to the selected table group, the smaller one is called the exposure amount error minimum value, and the larger one is called the exposure amount error maximum value. Of the representative values of the synchronization accuracy error corresponding to the selected table group, the smaller one is called the synchronization accuracy error best value, and the larger one is called the synchronization accuracy error worst value. The analysis apparatus 500 refers to the table of the image height f _k (k = 0 to M) corresponding to the in-shot X coordinate of the pattern from the selected four table groups, and selects the four tables shown below. read out. Here, k = 0 means that the image height is 0, that is, on the optical axis.
(1) Table 1 of the image height f _k of the table group at the minimum exposure error and the best synchronization accuracy error
(2) Table 2 of the image height f _k of the table group at the minimum exposure error and the worst synchronization accuracy error
(3) Table 3 of image height f _k of the table group at the maximum exposure error and the best synchronization accuracy error
(4) Table 4 of image height f _k of the table group at the maximum exposure error and the worst synchronization accuracy error

First, the analysis apparatus 500 reads the CD values corresponding to Z _MEAN and Z _MSD with reference to Tables 1 and 2. Note that this Z _MEAN uses a statistical value of the average deviation of the focus based on the lens control error, and this Z _MSD includes a statistical value of the standard deviation of the focus based on the lens control error. Is used. Then, from the CD values read from the tables 1 and 2 by the primary interpolation based on the internal division ratio of the synchronization accuracy error that internally divides between the worst value of the synchronization accuracy error and the best value of the synchronization accuracy error, A CD value corresponding to the synchronization accuracy error is calculated. More specifically, CD values, straight line intercepts and inclinations read from the two tables 1 and 2 in the two-dimensional plane with CD and synchronization accuracy as coordinate axes are obtained, and the straight line in the synchronization accuracy error is obtained. The value is obtained as a CD value corresponding to the synchronization accuracy error. Similarly, with reference to tables 3 and 4, CD values corresponding to Z _MEAN and Z _MSD are read out. In this case as well, this Z _MEAN is used with a statistical value of the average deviation of the focus based on the lens control error, and this Z _MSD is the standard deviation of the focus based on the lens control error. What added a statistical value is used. Then, from the CD values read from the tables 3 and 4 by primary interpolation based on the internal ratio of the synchronization accuracy error values that internally divide between the synchronization accuracy error worst value and the synchronization accuracy error best value, A CD value corresponding to the synchronization accuracy error is calculated. Subsequently, the calculated two CD values are subjected to exposure by linear interpolation based on the internal ratio of the exposure error value that internally divides between the minimum exposure error value and the maximum exposure error value. A CD value corresponding to the quantity control error is calculated. This CD value becomes the CD value at this sample point. Of course, the interpolation described above is also applied to the case where either the exposure amount error or the synchronization accuracy error is equal to the representative value and two tables are selected instead of the four tables.

  By the way, prior to the estimation of the line width using this table, it is necessary to register the CD value in the table in advance. This CD value is registered based on information obtained from the exposure apparatus 100 and the wafer inspector 120 before the execution of a series of processes. First, the exposure apparatus 100 performs scanning exposure with predetermined exposure conditions set to transfer a test pattern onto a test wafer, and exposure amount trace data, synchronization accuracy trace data, focus trace data, lens trace data at that time To get. Then, the test wafer to which the test pattern is transferred is developed on the C / D 110, and the wafer inspector 120 measures the line width of the test pattern. Then, the various trace data, the data relating to the set exposure conditions, and the measurement result of the line width are transferred to the analysis apparatus 500.

  The analysis apparatus 500 calculates statistical values of exposure amount, synchronization accuracy, focus, and lens control error at the sample point to which the test pattern whose line width is measured is transferred based on various trace data. Next, the analysis apparatus 500 groups the measurement results for each predetermined range (that is, cells in the table) based on the representative values of various control errors set in the table. Then, the average value of the line width measurement results belonging to the same group is registered in the table as the CD value of the cell. Note that the registered CD value is not based on the measurement result of the wafer inspector 120 but may be based on the value measured by the SEM or the value measured by the OCD method or the like. Instead of using a wafer, an aerial image sensor that measures the aerial image of the test pattern may be installed instead, and a calculated value of the aerial image simulation obtained from the aerial image of the test pattern measured by the aerial image sensor may be used. .

  Even if the exposure error, synchronization accuracy error, focus error, and lens error are exactly the same, the CD value varies depending on the exposure conditions of the exposure apparatus 100 and the design conditions of the pattern to be transferred. Therefore, this table group is prepared for each exposure condition and pattern design condition. As described above, the table group needs to be stored in a database so that an estimated value of the CD value can be searched using exposure conditions, pattern design conditions, exposure amount errors, synchronization accuracy errors, and focus errors as keys. The exposure conditions include exposure wavelength, projection optical system NA, illumination NA, illumination σ, illumination type, depth of focus, etc. The pattern design conditions include mask line width, target line width (for example, 130 nm), pattern There are pitch, mask type (binary, halftone, Levenson), pattern type (isolated line, line and space pattern), and so on. The relationship between these exposure conditions, pattern design conditions, pattern line width, and various conditions such as image height on the table are disclosed in detail in, for example, Japanese Patent Application Laid-Open No. 2001-338870. The detailed explanation is omitted.

  This CD table group is also used for optimization of parameters related to the pattern line width in the analysis apparatus 500. For example, the CD table is used when obtaining a combination of control parameters related to exposure amount control, synchronization control, focus control, lens control, or illumination conditions as a precondition that the line width approaches the design value. Reference group.

  The analysis apparatus 500 can also optimize the wavefront aberration of the projection optical system. The analysis device 500 registers a wavefront aberration change table with respect to the driving amount of the lens element and an imaging performance change table with respect to the wavefront aberration. The analysis apparatus 500 calculates the wavefront aberration of the projection optical system, that is, the magnitudes of the first to 37th terms of the Zernike term based on the measurement data relating to the wavefront aberration. The analysis device 500 includes a Zernike term size (that is, wavefront aberration data), a lens element driving range, a wavefront aberration change table with respect to the driving amount of the lens element, an imaging performance change table with respect to the wavefront aberration, and an imaging performance. The error tolerance value is input, and using them, based on the wavefront aberration data calculated from the measurement result of the wafer inspector 120, the adjustment value of the driving position of the lens element and the exposure wavelength, the stage holding the wafer, etc. The attitude adjustment value, residual error, and predicted imaging performance after driving are output. The driving position of the lens element is sent to the exposure apparatus 100.

  The exposure apparatus 100 adjusts the wavefront aberration and the like of the projection optical system by driving the lens element to the sent drive position via an imaging performance controller (not shown) that controls the imaging performance of the projection optical system. Or changing the offset value of the attitude control of the stage holding the wafer, or finely adjusting the wavelength of the illumination light for exposure to bring the imaging performance close to the target value.

[Wavefront aberration change table]
The wavefront aberration change table corresponds to the change in the unit adjustment amount of the adjustment parameter that affects the formation state of the projected image of the pattern on the reticle, for each of multiple measurement points in the field of view of the projection optical system (that is, in the exposure area). 6 is a change table including a data group in which data indicating the relationship between the imaging performance, for example, the variation amount of the coefficient of the first to 37th terms of the Zernike polynomial described above is arranged according to a predetermined rule. The elements of the wavefront aberration change table can be obtained as a result of simulation using a model that is substantially equivalent to the projection optical system. As described above, the adjustment parameters are the driving amount of 6 degrees of freedom of the five movable lenses in the projection optical system, the wavelength of the illumination light for exposure, and the driving amounts of Z, θx, and θy of the wafer surface (that is, wafer stage WST). is there.

[Imaging performance sensitivity table]
The imaging performance sensitivity table shows different exposure conditions, that is, optical conditions (exposure wavelength, maximum NA, use NA, illumination NA, aperture shape of illumination system aperture stop, illumination σ, etc.) and evaluation items. (Such as mask type, line width, evaluation amount, pattern information, etc.) and the imaging performance of the projection optical system, for example, various values determined under a plurality of exposure conditions determined by the combination of these optical conditions and evaluation items. This is a database including a calculation table composed of the change amounts per 1λ of the Zernike polynomials of aberration (or its index value), for example, the first term to the 37th term, that is, the Zernike sensitivity table. The Zernike sensitivity table is also called Zernike Sensitivity. Therefore, a file made up of Zernike sensitivity tables under a plurality of exposure conditions is also called a “ZS file”.

  In the present embodiment, as the imaging performance for which Zernike sensitivity is calculated, the following 12 types of linear aberrations that are linear imaging performance with respect to each Zernike coefficient, that is, distortion in the X-axis direction and the Y-axis direction, 13 types of imaging with line width abnormal values as index values of 4 types of coma aberration, 4 types of curvature of field, 2 types of spherical aberration, and line width CD as nonlinear imaging performance for each Zernike coefficient Performance is included. Here, the line width as nonlinear imaging performance for each Zernike coefficient includes a line pattern extending in the vertical direction in addition to the line width of the image of the line pattern formed on the image plane by the projection optical system, and the horizontal direction. However, in the following description, the line width CD of the image of the line pattern will be taken up as a representative example.

  The analysis apparatus 500 calculates each current imaging performance based on the calculated wavefront aberration data and the imaging performance change table, and then temporarily moves the lens element, the wavelength of the illumination light for exposure, and the wafer surface. Find the change in imaging performance. And the position of the lens element in the state where the imaging performance will be most favorable, the wavelength of the illumination light for exposure, the wafer surface position and the imaging performance prediction information at that time (the driving amount of the lens element (adjustment parameter), (Residual error, imaging performance) are output as optimization results. Here, the imaging performance is calculated in consideration of the lens element driving range and the imaging performance error tolerance.

  In other words, here, the imaging performance required when the measured wavefront aberration amount exceeds the threshold value for wavefront aberration determined based on the above-mentioned various database information due to the demand for imaging performance. Adjustment parameters are calculated so that the imaging performance approaches.

  In the present embodiment, the wavefront aberration change table with respect to the driving amount of the lens element and the imaging performance change table with respect to the wavefront aberration are included in the analysis apparatus 500. Therefore, the analysis apparatus 500 may acquire the adjustment parameter of the projection optical system from the exposure apparatus 100 when it becomes necessary to calculate the adjustment parameter.

[Device manufacturing processing equipment group]
Returning to FIG. 1, as the device manufacturing processing apparatus group 900, a CVD (Chemical Vapor Deposition) apparatus 910, an etching apparatus 920, and a process of planarizing a wafer by performing chemical mechanical polishing are performed. A CMP (Chemical Mechanical Polishing) apparatus 930 and an oxidation / ion implantation apparatus 940 are provided. The CVD apparatus 910 is an apparatus that generates a thin film on a wafer, and the etching apparatus 920 is an apparatus that performs etching on a developed wafer. The CMP apparatus 930 is a polishing apparatus that flattens the surface of the wafer by chemical mechanical polishing. The oxidation / ion implantation apparatus 940 is an apparatus for forming an oxide film on the surface of the wafer or implanting impurities into a predetermined position on the wafer. Also, a plurality of CVD apparatuses 910, etching apparatuses 920, CMP apparatuses 930, and oxidation / ion implantation apparatuses 940 are provided in the same manner as the exposure apparatus 100 and the like, and a transfer path for enabling transfer of wafers between them is provided. Is provided. In addition to this, the device manufacturing processing apparatus group 900 includes apparatuses that perform probing processing, repair processing, dicing processing, packaging processing, bonding processing, and the like.

[Management controller]
The management controller 160 centrally manages the exposure process performed by the exposure apparatus 100, and also manages the C / D 110 and the wafer inspector 120 in the track 200 and controls their cooperative operation. As such a controller, for example, a personal computer can be adopted. The management controller 160 receives information indicating the progress status of processing and operations, information indicating processing results, and measurement / inspection results from each apparatus through a communication network in the device manufacturing processing system 1000, and The status of the entire production line is grasped, and each apparatus is managed and controlled so that the exposure process and the like are performed appropriately.

[Host system]
A host system (hereinafter referred to as “host”) 600 manages the entire device manufacturing processing system 1000 and controls the exposure apparatus 100, C / D 110, wafer inspector 120, and device manufacturing processing apparatus group 900. It is a computer. For the host 600, for example, a personal computer can be employed. The host 600 and other devices are connected via a wired or wireless communication network so that data communication can be performed between them. By this data communication, the host 600 realizes overall control of this system.

[Device manufacturing process]
Next, a flow of a series of processes in the device manufacturing processing system 1000 will be described. FIG. 3 shows a flowchart of this process. A series of processes of the device manufacturing processing system 1000 is scheduled and managed by the host 600 and the management controller 160. As described above, wafers are processed in units of lots. Actually, however, the processing shown in FIG. 3 is repeated for each wafer in units of lots, for example, in a pipeline manner.

  As shown in FIG. 3, first, in step 201, a pre-measurement / inspection process for the reticle carried into the exposure apparatus 100 is performed. Here, the internal reticle inspector 130 is used to detect adhesion or defects of foreign matter on the reticle based on the result of laser scanning of the pattern on the reticle and the imaging data. The process of step 201 will be described later in detail. In the next step 203, the exposure apparatus loads the reticle onto the stage, and performs preparatory processing such as reticle alignment and measurement of the baseline (distance between the off-axis alignment sensor and the reticle pattern center).

  Thereafter, the wafer is processed in parallel with the above steps 201 and 203. First, a film is formed on the wafer in the CVD apparatus 910 (step 205), the wafer is transferred to the C / D 110, and a resist is applied on the wafer in the C / D 110 (step 207). Next, the wafer is transferred to the wafer inspection device 120, and the wafer inspection device 120 selects a shot region (hereinafter referred to as a measurement target) from among a plurality of shot regions of the previous layer already formed on the wafer. For the shot, pre-measurement inspection processing such as measurement of shot flatness (focus step in the shot area) and inspection of foreign matter on the wafer is performed (step 209). The number and arrangement of the measurement shots can be arbitrary, but can be, for example, eight shots on the outer periphery of the wafer. The measurement result of the wafer inspection device 120 (that is, the shot flatness of the measurement shot) is sent to the exposure apparatus 100 and the analysis apparatus 500. This measurement result is used for focus control during scanning exposure in the exposure apparatus 100.

  Subsequently, the wafer is transferred to the exposure apparatus 100, and the circuit pattern on the reticle is transferred onto the wafer by the exposure apparatus 100 (step 211). At this time, the exposure apparatus 100 monitors the exposure amount, synchronization accuracy, and focus trace data during measurement shot exposure, and stores them as log data in an internal memory. Next, the wafer is transferred to the C / D 110 and developed by the C / D 110 (step 213). Thereafter, post-measurement inspection processing such as measurement of the line width of the resist image by the wafer inspection device 120 and inspection of defects transferred onto the wafer is performed (step 215).

  Next, analysis processing is performed in the analysis apparatus 500 (step 217). This analysis process will be described later. The wafer is transferred from the wafer inspector 120 to the etching apparatus 920, etched in the etching apparatus 920, impurity diffusion, wiring processing, film formation in the CVD apparatus 910, planarization in the CMP apparatus 930, oxidation / ion implantation apparatus Ion implantation or the like at 940 is performed as necessary (step 219). Then, the host 600 determines whether the repetitive process is completed and all patterns are formed on the wafer (step 221). If this determination is denied, the process returns to step 201, and if affirmed, the process proceeds to step 223. As described above, a series of processes such as film formation, resist coating, etching, and the like are repeatedly executed for the number of steps, whereby circuit patterns are stacked on the wafer to form a semiconductor device.

  After the repetition process is completed, the probing process (step 223) and the repair process (step 225) are executed in the device manufacturing processing apparatus group 900. In step 223, when a memory failure is detected, in step 225, for example, a replacement process with a redundant circuit is performed. The analysis apparatus 500 can also send information such as the location where the detected line width abnormality has occurred to an apparatus that performs probing processing and repair processing. In an inspection apparatus (not shown), a portion where a line width abnormality has occurred on a wafer can be excluded from processing targets for probing processing and repair processing in units of chips. Thereafter, a dicing process (step 227), a packaging process, and a bonding process (step 229) are executed to finally complete a product chip. Note that the post-measurement inspection process in step 215 may be performed after the etching in step 219. In this case, line width measurement is performed on the etching image on the wafer.

[Optimization process 1]
Next, a series of optimization processes in the device manufacturing processing system 1000 will be described in detail. FIG. 4 shows a data flow showing the flow of data communication in this optimization processing. As shown in FIG. 4, the data of the reticle pre-measurement inspection result of the reticle inspector 130 in step 201 (see FIG. 3) is sent to the analysis device 500 in response to a request from the analysis device 500 or automatically. Sent. Further, the data of the post-measurement / inspection result of the wafer of the wafer inspection device 120 in step 215 (see FIG. 3) is also sent to the analysis apparatus 500 in response to a request from the analysis apparatus 500 or automatically. The analysis apparatus 500 stores the pre-measurement inspection result of the reticle and the post-measurement inspection result of the wafer in a storage device (not shown), and proceeds to step 217 at an appropriate timing to perform analysis using these inspection results. Process. This analysis process will be described in detail. Note that this analysis processing may be performed based on the acquired log data by issuing a data request (log data of the processing state) to the exposure apparatus 100 as necessary to acquire the log data.

  An analysis result in the analysis apparatus 500 is sent to the exposure apparatus 100. The exposure apparatus 100 adjusts apparatus parameters and the like based on the analysis result. This adjustment process will also be described later.

[Analysis processing]
There are the following two analysis processes (step 217) performed in the analysis apparatus 500.
(1) Analysis processing for optimizing the inspection conditions of the reticle inspector 130 (2) Analysis processing for optimizing the processing conditions of the exposure apparatus 100 and the like

[Analysis process 1]
First, as shown in FIG. 5, in step 401, a reticle inspection result is obtained from the reticle inspector 130. In this case, if a reticle abnormality is detected, the reticle inspection result includes the position on the reticle where the abnormality has occurred, the type of abnormality (foreign matter or defect), size, number, detection signal, etc. include. In the next step 403, based on the reticle inspection result, it is determined whether the reticle has foreign matter or a defect. If this determination is denied, the process proceeds to step 419, and if affirmed, the process proceeds to step 405.

  In step 405, wafer inspection result data is acquired from the wafer inspector 120. In the next step 407, the degree of correlation between the reticle inspection result data and the wafer inspection result data is calculated. In the next step 409, it is determined whether or not the calculated degree of correlation exceeds a threshold value. If the determination is affirmed, the process proceeds to step 411. If the determination is negative, the process proceeds to step 417.

  In step 411, it is determined whether the inspection result is a foreign object. If this determination is negative, the process proceeds to step 413, where it is determined that there is a defect in the reticle, and the need for reticle replacement is set as the notification content. If the determination in step 411 is affirmative, the process proceeds to step 415 to set the need for foreign matter removal as the notification content.

  On the other hand, in step 417 performed after the determination in step 409 is affirmed, the determination level of the reticle inspector 120 is adjusted. In other words, if the reticle inspection result is abnormal and there is no correlation with the wafer inspection result, the abnormality detection level is assumed to be different from the abnormality detection level that does not affect the yield, and abnormality detection is performed as notification content. Set a higher threshold for

  After Steps 413, 415, and 417 are executed, the process proceeds to Step 419, and the notification content is sent to the exposure apparatus 100 (reticle inspector 130).

  FIG. 6 shows a subroutine of step 303 which is an adjustment process of the exposure apparatus 100 (including the reticle inspector 130) after this notification. As shown in FIG. 6, first, in step 451, the notification content from the analysis apparatus 500 is acquired. In the next step 453, it is determined whether or not an abnormality has been detected in the reticle inspection result. If this determination is denied, the process ends. If the determination is affirmed, the process proceeds to step 455.

  In step 455, it is determined whether or not the degree of correlation exceeds a threshold value. If this determination is positive, the process proceeds to step 457, and if this determination is negative, the process proceeds to step 463. In step 457, it is determined whether or not the cause of the abnormality in the reticle inspection result is a foreign object. If this determination is denied, the process proceeds to step 459, and if it is affirmed, the process proceeds to step 461. In step 459, since it is determined that there is a pattern defect, the reticle is replaced with a reticle having no defect. In step 461, it is determined that there is a foreign substance, and thus the reticle is cleaned. On the other hand, in step 463, the abnormality determination level is changed. After steps 459, 461, and 463 are completed, the process is terminated.

[Analysis process 2]
Next, analysis process 2 will be described. FIG. 7 shows a flowchart of the second analysis process. As shown in FIG. 7, in step 501, a wafer inspection result is acquired. In this case, as a result of wafer inspection, if a wafer abnormality is detected, the position on the wafer where the abnormality has occurred, the type of abnormality (foreign matter or defect), size, number, detection signal, etc. include. In the next step 503, the wafer inspection result is referred to and it is determined whether or not there is a foreign object / defect on the wafer. If this determination is denied, the process proceeds to step 541, and if affirmed, the process proceeds to step 505. In step 505, the reticle inspection result is acquired from the reticle inspector 130. In the next step 507, the degree of correlation between the reticle inspection result (reticle abnormality) and the wafer inspection result (wafer defect) is calculated. In step 509, It is calculated whether or not the degree of correlation is greater than or equal to a threshold value. If the determination in step 509 is affirmed, the process proceeds to step 511. If the determination is negative, the process proceeds to step 517.

  In step 511, it is determined whether or not the reticle abnormality factor is a foreign substance. If this determination is denied, the process proceeds to step 513, and if affirmed, the process proceeds to step 515. In step 513, it is determined that there is a defect in the reticle, and reticle replacement necessity is set. In step 517, foreign substance removal necessity is set.

  On the other hand, in step 517, log data is acquired from the exposure apparatus 100, and in step 519, the degree of correlation between the log data and the wafer inspection result is calculated. Here, the degree of correlation between the detection signal at the position where the abnormality has occurred and the log data is calculated. In the next step 521, it is determined whether or not the degree of correlation exceeds a threshold value. Only when this determination is affirmative, the routine proceeds to step 525, where the control system parameters of the exposure apparatus are optimized. For example, referring to the CD table group 552, values such as an exposure amount, a synchronization error, a focus, a lens control error, and the like corresponding to an abnormal part calculated from log data so as to eliminate the cause of the abnormality of the wafer, Control system parameters in various control systems are optimized based on the relationship with the estimated line width at that time. Further, when the wafer abnormality is a device pattern overlay abnormality, the apparatus parameters related to the wafer alignment are also targeted for optimization. The optimized parameter is set as an analysis result.

  In the next step 531, it is determined on the basis of data acquired from them whether or not there is an abnormality in the processing contents of the C / D 110 and the inspectors 120 and 130. Only when this determination is affirmed, the process proceeds to step 533 to set the adjustment necessity of the C / D 110 and the inspectors 120 and 139.

  In step 535, it is set whether or not the aberration adjustment of the projection optical system is necessary. Only when this determination is affirmative, the routine proceeds to step 537, where the aberration adjustment requirement of the projection optical system is set.

  In step 539, reticle optimization processing is performed. This is reticle optimization using OPC and phase shift technology. More specifically, a portion where the pattern deviation from the design information is greater than or equal to a threshold is extracted from the wafer inspection result. Then, the pattern design information is changed by using the OPC technique or the phase shift mask technique for the portion where the deviation is large. Then, a reticle that matches the design information of the changed pattern is prepared.

  8A to 8E show an example of pattern design change by the OPC technique. In the example of FIG. 8A, when a part of the line pattern of the line and space pattern becomes thin (that is, when the dimension varies), the line pattern is made thick. The pattern has been corrected. Thereby, the transfer pattern on the wafer becomes the design pattern.

  In the example of FIG. 8B, when a square reticle pattern is elongated vertically on the wafer, the pattern on the wafer is corrected by correcting the reticle pattern to be elongated horizontally. It is corrected to a square shape according to the design pattern.

  Further, the example of FIG. 8C shows a case where the line pattern and the rectangular pattern are connected in the transfer pattern of the combination pattern of the two line patterns and the rectangular pattern sandwiched between the line patterns. Has been. In this case, the pattern on the wafer is formed as designed by correcting the part of the line pattern so as to be narrow so that the space between the line pattern and the rectangular pattern is widened.

  In FIG. 8D, when the four corners of the line pattern of the line and space pattern (L / S pattern) are rounded, the four corners of the line pattern on the reticle are rectangular. It has been expanded. In the example shown in FIG. 8E, auxiliary patterns are formed on the four sides of the line pattern when the line pattern becomes smaller as a whole.

  On the other hand, as the phase shift mask, various types such as a Levenson type, an auxiliary pattern type, a rim type, a half tone type, and a chrome-less type can be applied.

  After steps 513, 515, and 539 are completed, the process proceeds to step 541, where various devices and analysis results are notified, and the process ends.

  FIG. 9 shows a flowchart of processing of the exposure apparatus 100 that has received this notification. As shown in FIG. 9, in step 551, the notification content is acquired, and in step 553, it is determined whether or not there is an abnormality in the wafer. If this determination is negative, the process is terminated as it is. If the determination in step 553 is affirmed, the process proceeds to step 555. Here, it is determined whether there is no correlation. If this determination is affirmative (if there is no correlation), it is determined in step 557 whether there is a foreign object. If the determination is negative, it is determined that the reticle is defective, and reticle replacement is performed in step 559. If the determination is affirmative, reticle cleaning is performed in step 561.

  On the other hand, if the determination in step 555 is affirmative, the process proceeds to step 563 to determine whether there is a parameter to be optimized. If yes, the process proceeds to step 565, and optimization parameters are set. If not, the process proceeds to step 567 to determine whether or not to adjust the aberration of the projection optical system. If the optical system is adjusted and the result is negative, the process ends.

  Note that the analysis processing in the above-described analysis apparatus 500 is independent of the processing in other apparatuses, and therefore hardly affects the throughput of device production.

  As described in detail above, according to the present embodiment, reticle defect inspection data of the reticle inspector 130 and wafer defect inspection data of the wafer inspector 120 are collected, and the collected data are integrated and managed. Therefore, it is possible to construct an environment in which defects that affect the yield can be quickly detected and data that can be corrected are derived. As a result, the yield of device production is improved.

  Further, according to the present embodiment, the analysis apparatus 500 executes steps 407 and 409 for determining the correlation between the data related to the inspection content of the reticle inspection device 130 and the data related to the inspection content of the wafer inspection device 120. In this way, it is possible to determine whether or not the reticle is the cause of the wafer defect.

  Further, according to the present embodiment, optimization processing of various processing conditions is executed only when an abnormality is recognized in the wafer inspection of the wafer inspection device 120. In this way, as long as the inspection is normal, it is not necessary to perform the optimization process, so the processing load on the analysis apparatus 500 and the entire system is reduced. Of course, various processing conditions may be optimized every other wafer, every third wafer, only at the head of the lot, or periodically. The frequency of performing the optimization process can be increased or decreased. For example, when a wafer abnormality is detected, the frequency of performing the optimization process is increased, and after that, if the wafer inspection result is stabilized, the frequency of the optimization process may be decreased.

  In the present embodiment, the determination of the correlation between the reticle inspection and the wafer inspection is performed for each wafer, but this can be executed at an arbitrary timing. For example, optimization processing of various processing conditions can be executed only for the first wafer in a lot, every third wafer, every fifth wafer, or periodically. As a result, a decrease in device production throughput is prevented.

  Further, according to the present embodiment, when a correlation is recognized between the reticle inspection and the wafer inspection and an abnormality is recognized in the wafer, the steps 413 and 415 for improving the state of the reticle pattern are executed. To do. In step 413, the reticle is exchanged. In step 415, the pattern on the reticle is cleaned (removal of foreign matter on the reticle). Thereby, the state of the reticle is improved and the exposure accuracy is improved.

  If no correlation is found between the reticle inspection and the wafer defect inspection, and an abnormality is detected in either the reticle inspection device 130 inspection or the wafer inspection device 120 inspection, no abnormality is detected. The inspection conditions of the other reticle inspection device 130 or wafer inspection device 120 are optimized. In this way, an inspection posture that is actually directly linked to the yield is established.

  Further, according to the present embodiment, for example, the inspection condition to be optimized can be set to an abnormality detection level for determining abnormality. If this abnormality detection level is set appropriately, the occurrence of pseudo defects and the like is suppressed, and the yield of device production is improved.

  In addition, according to the present embodiment, when an abnormality is found in the inspection result of the reticle inspection device 130 and no abnormality is found in the inspection result of the wafer inspection device 120, the inspection condition of the reticle inspection device 130 is changed. Optimize.

  Further, according to the present embodiment, the exposure apparatus 100 that transfers the pattern to the wafer and the analysis apparatus 500 are connected so that data communication is possible. Next, log data regarding the wafer processing state by the exposure apparatus 100 is collected. If no correlation is found between the wafer inspection result and the reticle inspection result, the correlation between the log data relating to the processing state of the exposure apparatus 100 and the inspection result of the wafer inspector 120 is determined. This correlation determination makes it possible to determine whether or not the exposure apparatus 100 is the cause of the wafer defect.

  Further, according to the present embodiment, when the correlation between the wafer inspection result and the processing state of the exposure apparatus 100 is recognized, the processing content of the exposure apparatus 100 is optimized. As described above, since the processing content of the exposure apparatus 100 is improved based on the correlation with the wafer inspection result, the yield of device production is improved.

  Further, according to the present embodiment, no correlation is observed between the reticle inspection result and the wafer inspection result, and no correlation is observed between the wafer inspection result and the processing state of the exposure apparatus 100. In some cases, the reticle itself may be exchanged. Here, a plurality of reticles may be prepared, and an optimum reticle may be selected from a plurality of different reticles. Such a plurality of reticles can be reticles using OPC technology or phase shift technology.

  Further, according to the present embodiment, based on data collected from the reticle inspector 130 and the wafer inspector 120, using the analysis apparatus 500, based on data relating to the inspection contents of one of the inspectors 120 and 130, The inspection conditions of the inspection contents of the other inspectors 120 and 130 can be optimized.

  Such optimization can be performed when an abnormality is recognized in either the inspection result of the reticle inspection device 130 or the inspection result of the wafer inspection device 120, or at an arbitrary timing.

  In addition, in this optimization process, when an abnormality is found in the inspection results of one of the inspectors 120 and 130, the other inspection is performed so that the inspection corresponding to the abnormality is focused on. The inspection conditions of the instruments 120 and 130 can be optimized.

  Further, according to the present embodiment, when an abnormality is detected in at least one of the reticle inspection device 130 and the wafer inspection device 120, the analysis apparatus 500 collects only data relating to the abnormality. In this way, it is possible to reduce the amount of data communication and reduce the traffic load on the communication network.

  In addition, the analysis processing up to the reticle optimization according to the present embodiment is, in other words, the inspection result data of the reticle inspector 130, the data related to the processing contents of the exposure apparatus 100, and the inspection result of the wafer inspector 120. It can be assumed that the pattern design data is created in consideration of the correlation with the data.

  That is, based on the correlation between the data relating to the inspection result of the reticle inspector 130 and the data relating to the inspection result of the wafer inspector 130, the state of the pattern on the reticle is improved, and the log data relating to the processing content of the exposure apparatus 100; Based on the correlation with the data related to the inspection result of the wafer inspection device 120, the control parameters of the exposure apparatus 100 are optimized, and the pattern on the reticle is determined based on the data related to the inspection result of the wafer inspection device 120. Design data (OPC mask or phase shift mask) is created. If the design data of the pattern formed on the reticle is created by comprehensively taking these data into consideration, it becomes possible to produce a device under an optimum state.

  Further, according to the present embodiment, when an abnormality is detected in the reticle inspection, data on the portion where the abnormality is recognized (position, type, size, number, detection signal, etc. in the reticle where the abnormality occurs) The data is transmitted from the exposure apparatus 100 to the wafer inspection device 120 or the analysis apparatus 500. The wafer inspection device 120 or the analysis apparatus 500 optimizes the wafer inspection conditions based on this data. In this way, the wafer can be inspected in an optimum state.

  Further, according to the present embodiment, the wafer and the exposure apparatus (exposure by the exposure apparatus) are performed in accordance with data regarding pattern defects (for example, rounded corners and deviation from design dimensions) detected by the in-line wafer inspection device 120. The mask used for exposure is changed to a mask suitable for the correction (a mask using an OPC technique, a phase shift technique, or the like). Thereby, highly accurate exposure can be realized.

  Further, according to the present embodiment, the wafer inspector 120 or the analysis apparatus 500 analyzes the tendency of the abnormality occurrence on the wafer between lots, between wafers, and between shots. In this way, it is possible to increase the inspection frequency at a place where the frequency of occurrence of abnormality is high, or to reduce the inspection frequency at a place where the probability of occurrence of abnormality is extremely low.

  Note that it is not always necessary to discard a wafer in which an abnormality has been detected, and the wafer may be reused by removing the resist film or the like.

  In this embodiment, the wafer inspection device 120 is connected inline with the exposure apparatus 100 and the like. However, the wafer inspection device 120 is an off-line measurement inspection device that is not connected inline with the exposure apparatus 100 and the track 200. There may be.

  Further, as disclosed in Japanese Patent Application Laid-Open No. 11-135400 and Japanese Patent Application Laid-Open No. 2000-164504, a wafer stage for holding a wafer, a reference member on which a reference mark is formed, and a measurement stage equipped with various photoelectric sensors; The present invention can also be applied to an exposure apparatus provided with the above.

  In the above-described embodiment, the step-and-scan type and step-and-repeat type projection exposure apparatus has been described. Needless to say, the present invention can also be applied to an exposure apparatus. The present invention can also be suitably applied to a step-and-stitch reduction projection exposure apparatus that combines a shot area and a shot area. As represented by this, the various apparatuses are not limited to those types.

  Further, for example, the present invention can be applied to a twin stage type exposure apparatus having two wafer stages as disclosed in International Publication Nos. WO98 / 24115 and WO98 / 40791. Of course, the present invention can also be applied to an exposure apparatus using a liquid immersion method disclosed in, for example, International Publication WO99 / 49504. In this case, an exposure apparatus that locally fills the liquid between the projection optical system and the wafer is employed, but the present invention is disclosed in JP-A-6-124873, JP-A-10-303114, and US Pat. The present invention is also applicable to an immersion exposure apparatus that performs exposure in a state where the entire exposed surface of a substrate to be exposed is immersed in a liquid as disclosed in the specification of US Pat. No. 5,825,043.

  The present invention is not limited to a semiconductor manufacturing process, and can be applied to a manufacturing process of a display including a liquid crystal display element. Line width in all device manufacturing processes, including the process of transferring the device pattern onto the glass plate, the manufacturing process of the thin film magnetic head, the manufacturing process of the imaging device (CCD, etc.), micromachine, organic EL, DNA chip, etc. Of course, the present invention can be applied to management.

  In the above embodiment, the analysis apparatus 500 is a PC, for example. That is, the analysis processing in the analysis apparatus 500 is realized by executing an analysis program on a PC. As described above, this analysis program may be installable on the PC via a medium, or may be downloadable to the PC via the Internet or the like. Of course, the analysis apparatus 500 may be configured by hardware.

  Further, although the analysis apparatus 500 is an apparatus independent of the exposure apparatus 100 (including the reticle inspector 130), the C / D 110, and the wafer measurement inspector 120, any of them may be provided.

  As described above, the information management method, information management system, program, recording medium, pattern inspection apparatus, and substrate inspection apparatus of the present invention are suitable for manufacturing a micro device.

It is a figure which shows schematic structure of the device manufacturing processing system which concerns on one Embodiment of this invention. It is a flowchart which shows an example of CD table group. It is a flowchart which shows the flow of a wafer process. It is a flow which shows the flow of an analysis process. It is a flowchart which shows the analysis process 1 in an analyzer. It is a flowchart which shows the adjustment process 1 in exposure apparatus. It is a flowchart which shows the analysis process 2 in an analyzer. FIG. 8A to FIG. 8E are flowcharts showing design examples of OPC masks. It is a flowchart which shows the adjustment process 2 in exposure apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 51 ... Index table 52 ... Table group 100 ... Exposure apparatus 110 ... Coater / developer 120 ... Wafer inspection device 130 ... Reticle inspection device 160 ... Management controller 200 ... Track 500 ... Analysis device 552 ... CD Table group, 600 ... Host system, 900 ... Device manufacturing processing apparatus group, 910 ... CVD apparatus, 920 ... Etching apparatus, 930 ... CMP apparatus, 940 ... Oxidation / ion implantation apparatus, 1000 ... Device manufacturing processing system.

Claims (33)

A pattern inspection apparatus for inspecting a pattern and an information processing apparatus are connected so as to be able to transmit information, and a substrate inspection apparatus for inspecting a substrate to which the pattern is transferred and the information processing apparatus are connected so as to be able to transmit information. Connection process;
A collection step of collecting information relating to inspection contents of the pattern inspection apparatus and information relating to inspection contents of the substrate inspection apparatus using the information processing apparatus;
A management step of managing the collected information using the information processing apparatus.   2. The inter-inspection correlation determination step of determining, using an information processing device, a correlation between information related to inspection contents of the pattern inspection apparatus and information related to inspection contents of the substrate inspection apparatus. Information management method described.   3. The inter-inspection correlation determination step is performed when an abnormality is recognized in any of the inspection result of the pattern inspection apparatus and the inspection result of the substrate inspection apparatus, or at an arbitrary timing. Information management method described in 1.   3. The method according to claim 2, further comprising an improvement step of improving the state of the pattern when a correlation is recognized in the inter-inspection correlation determination step and an abnormality is found in the inspection result of the substrate inspection apparatus. Or the information management method of 3. In the improvement process,
The information management method according to claim 4, wherein either cleaning of the pattern or replacement of the pattern is performed.   The method further includes an optimization step of optimizing the inspection condition of the other inspection device when no correlation is recognized in the correlation determination step between inspections and abnormality is recognized in one inspection device. The information management method according to claim 2 or 3.   The information management method according to claim 6, wherein the inspection condition is a threshold value for determining abnormality.   When an abnormality is recognized in the inspection result of the pattern inspection apparatus, and an abnormality is not recognized in the inspection result of the substrate inspection apparatus, the method further includes an optimization step of optimizing the inspection conditions of the pattern inspection apparatus. The information management method according to claim 2 or 3, characterized by the above. A connection step of connecting at least one processing apparatus for processing the substrate and the information processing apparatus so as to be able to transmit information;
A collecting step of collecting information on the processing content of the substrate by the processing apparatus;
An inter-inspection correlation determination step for determining a correlation between information about the processing content of the processing apparatus and information about the inspection content of the substrate inspection apparatus when no correlation is found in the inter-inspection correlation determination step; The information management method according to claim 2, further comprising:   10. The information management according to claim 9, further comprising an optimization step of optimizing the processing content of the processing apparatus in which the correlation is recognized when the correlation is recognized in the correlation determination step between processing inspections. Method.   10. The method further comprises a changing step of changing the pattern when no correlation is found in the inter-inspection correlation determining step and no correlation is found in the inter-working inspection correlation determining step. Information management method described in 1. In the changing step,
12. The information management method according to claim 11, wherein one pattern is selected from a plurality of different patterns. In the changing step,
The information management method according to claim 11, wherein at least one of the shape and optical characteristics of the pattern is changed.   Based on the collected information, the information processing device is used to further include an optimization step of optimizing the inspection condition of the inspection content of the other inspection device based on the information related to the inspection content of the other inspection device. The information management method according to claim 1, wherein:   15. The optimization process is performed when an abnormality is recognized in any of an inspection result of the pattern inspection apparatus and an inspection result of the substrate inspection apparatus, or at an arbitrary timing. Information management method. In the optimization process,
It is characterized by optimizing the inspection condition of the other inspection device so that when an abnormality is found in the inspection result of one inspection device, the inspection corresponding to the abnormality is focused on the inspection. The information management method according to claim 14 or 15. In the collecting step,
The information according to any one of claims 1 to 16, wherein when an abnormality is detected in at least one of the pattern inspection apparatus and the substrate inspection apparatus, only information related to the abnormality is collected. Management method. Connecting at least one processing device including a transfer device for transferring the pattern to the substrate and the information processing device so as to be able to transmit information;
A collecting step of collecting information on the processing content of the processing apparatus;
A design process for creating pattern design information in consideration of the correlation between the information regarding the inspection content of the pattern inspection apparatus, the information regarding the processing content of the processing apparatus, and the information regarding the inspection content of the substrate inspection apparatus; The information management method according to claim 1, further comprising: Based on the correlation between the information about the inspection content of the pattern inspection apparatus and the information about the inspection content of the substrate inspection apparatus, improve the state of the pattern,
Based on the correlation between the information related to the processing content of the processing apparatus and the information related to the inspection content of the substrate inspection apparatus, the processing conditions of the processing apparatus are optimized,
The information management method according to claim 18, wherein the design information of the pattern is created based on information relating to inspection contents of the substrate inspection apparatus.   The information management method according to claim 18 or 19, wherein the design information of the pattern includes information on at least one of the shape and optical characteristics of the pattern. A pattern inspection apparatus for inspecting a pattern transferred onto a substrate;
A substrate inspection apparatus for inspecting the substrate to which the pattern is transferred;
It is connected to the pattern inspection apparatus and the substrate inspection apparatus so as to be able to transmit information, and collects information on the inspection contents of the pattern inspection apparatus and information on the inspection contents of the substrate inspection apparatus, and manages the collected information An information management system comprising the information processing apparatus. The information processing apparatus includes:
The information management system according to claim 21, further comprising determining a correlation between information relating to inspection contents of the pattern inspection apparatus and information relating to inspection contents of the substrate inspection apparatus. It further includes at least one processing device that is connected to the information processing device so as to be able to transmit information and processes the substrate,
The information processing device collects information on the processing content of the substrate by the processing device,
The correlation between the information related to the processing contents of the processing apparatus and the information related to the inspection contents of the substrate inspection apparatus is determined when no correlation is found in the inter-inspection correlation determination step. Information management system described in 1.   The information management system according to claim 21, wherein the information processing apparatus optimizes the inspection condition to the inspection content of the other inspection device based on the information related to the inspection content of the one inspection device. The apparatus further includes at least one processing device including a transfer device connected to the information processing device so as to be able to transmit information and transferring the pattern to the substrate,
The information processing apparatus collects information related to processing contents of the processing apparatus, and includes information related to inspection contents of the pattern inspection apparatus, information related to processing contents of the processing apparatus, and information related to inspection contents of the substrate inspection apparatus. The information management system according to claim 21, wherein the pattern design information is created in consideration of the correlation. A procedure for collecting information about inspection contents from a pattern inspection apparatus for inspecting a pattern;
A procedure for collecting information on inspection contents from a substrate inspection apparatus for inspecting the substrate on which the pattern is transferred;
A program for causing a computer to execute a procedure for managing information collected from the pattern inspection apparatus and information collected from the substrate inspection apparatus.   27. The program according to claim 26, further causing a computer to execute a procedure for determining a correlation between information collected from the pattern inspection apparatus and information collected from the substrate inspection apparatus. A procedure for collecting information on processing content from at least one processing apparatus for processing the substrate;
When the correlation between the information collected from the pattern inspection apparatus and the information collected from the substrate inspection apparatus is not recognized, the information about the processing contents of the processing apparatus and the information about the inspection contents of the substrate inspection apparatus 28. The program according to claim 27, further causing a computer to execute a procedure for determining correlation.   27. The program according to claim 26, further causing the computer to execute a procedure for optimizing the inspection condition of the inspection content of the other inspection device based on the collected information relating to the inspection content of the one inspection device. A procedure for collecting information on the processing content of the processing device from at least one processing device including a transfer device for transferring the pattern to the substrate;
A procedure for obtaining a correlation between information relating to inspection contents of the pattern inspection apparatus, information relating to processing contents of the processing apparatus, and information relating to inspection contents of the substrate inspection apparatus;
27. The program according to claim 26, further causing a computer to execute a procedure for creating pattern design information based on the obtained correlation.   A recording medium for recording the program according to any one of claims 26 to 30 so as to be readable by a computer system. A pattern inspection apparatus for inspecting a pattern transferred onto a substrate,
A receiving device for receiving information related to inspection contents in a substrate inspection device for inspecting the substrate on which the pattern is transferred;
The pattern inspection apparatus which optimizes the said board | substrate inspection method based on the correlation with the information regarding the said test | inspection of the pattern, and the information regarding the test | inspection content in the said board | substrate inspection apparatus. A substrate inspection apparatus for inspecting a substrate onto which a pattern has been transferred,
A receiving device for receiving information on the inspection content in the pattern inspection device for inspecting the pattern;
A substrate inspection apparatus that optimizes a method for inspecting the substrate based on a correlation between information about inspection of the substrate and information about inspection contents of the pattern inspection apparatus.

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