JP2007214439A - Composite sensor package - Google Patents

Composite sensor package Download PDF

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JP2007214439A
JP2007214439A JP2006033805A JP2006033805A JP2007214439A JP 2007214439 A JP2007214439 A JP 2007214439A JP 2006033805 A JP2006033805 A JP 2006033805A JP 2006033805 A JP2006033805 A JP 2006033805A JP 2007214439 A JP2007214439 A JP 2007214439A
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silicon substrate
sensor package
composite sensor
conductive vias
cap body
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JP4703424B2 (en
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Satoru Kuramochi
悟 倉持
Yoshitaka Fukuoka
義孝 福岡
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a small and highly reliable composite sensor package by solving the problem that a conventional composite sensor package is hermetically sealed or resin-sealed for each mounted MEMS sensor or each electronic component and this causes large spread in a face direction, resulting in the limit of miniaturization. <P>SOLUTION: The composite sensor package 1 has a silicon substrate 2; one or more MEMS sensors 4 and one or more electronic components 5 mounted on one surface of the silicon substrate 2; a cap 6 joined to the silicon substrate 2 so as to cover the MEMS sensors 4 and the electronic components 5; and a plurality front/rear conducting vias 3 formed on the silicon substrate 2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、複合センサーパッケージに係り、特にＭＥＭＳセンサーと電子部品とを実装した複合センサーパッケージに関する。   The present invention relates to a composite sensor package, and more particularly to a composite sensor package in which a MEMS sensor and an electronic component are mounted.

従来から、ＣＣＤ、ＣＭＯＳ等のイメージセンサー、加速度センサー等の各種ＭＥＭＳ（Micro Electro Mechanical System）センサーが種々の用途に用いられている。例えば、イメージセンサーは、半導体チップの一方の面が、光電変換を行う受光素子が配設されたアクティブ面となっている。このようなセンサーは、アクティブ面を保護したり、センサーの稼動を確保するために、センサー本体のアクティブ面に空隙部を設けるように保護材が配設され気密封止されたパッケージ構造となっている
また、シリコン基板上に複数のＭＥＭＳセンサーを実装したり、ＭＥＭＳセンサーと所望の電子部品を実装した複数センサーパッケージが開発されている（特許文献１）。
特開２００５−７２４１８号公報 Conventionally, various micro electro mechanical system (MEMS) sensors such as an image sensor such as a CCD and a CMOS and an acceleration sensor have been used for various purposes. For example, in an image sensor, one surface of a semiconductor chip is an active surface on which a light receiving element that performs photoelectric conversion is disposed. Such a sensor has a package structure in which a protective material is disposed and hermetically sealed so as to provide a gap in the active surface of the sensor body in order to protect the active surface and ensure the operation of the sensor. In addition, a plurality of sensor packages in which a plurality of MEMS sensors are mounted on a silicon substrate or a MEMS sensor and a desired electronic component are mounted have been developed (Patent Document 1).
JP-A-2005-72418

しかしながら、従来の複合センサーパッケージは、実装したＭＥＭＳセンサーや電子部品毎に、気密封止や樹脂封止を行うものであり、このため面方向の広がりが大きくなり、小型化に限界があった。
本発明は、上記のような実情に鑑みてなされたものであり、小型で信頼性が高い複合センサーパッケージを提供することを目的とする。 However, the conventional composite sensor package performs hermetic sealing or resin sealing for each mounted MEMS sensor or electronic component. Therefore, the spread in the surface direction is large, and there is a limit to downsizing.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a composite sensor package that is small and highly reliable.

このような目的を達成するために、本発明の複合センサーパッケージは、シリコン基板と、該シリコン基板の一方の面に実装された１個以上のＭＥＭＳセンサーと１個以上の電子部品と、これらのＭＥＭＳセンサーと電子部品とを覆うようにシリコン基板に接合されたキャップ体と、前記シリコン基板に形成された複数の表裏導通ビアと、を有するような構成とした。
本発明の他の態様として、前記表裏導通ビアは、前記キャップ体の接合部位よりも内側の領域に位置するような構成とした。
本発明の他の態様として、前記表裏導通ビアは、前記キャップ体の接合部位よりも外側の領域に位置するような構成とした。 In order to achieve such an object, the composite sensor package of the present invention includes a silicon substrate, one or more MEMS sensors mounted on one surface of the silicon substrate, one or more electronic components, The cap body joined to the silicon substrate so as to cover the MEMS sensor and the electronic component, and a plurality of front and back conductive vias formed on the silicon substrate were configured.
As another aspect of the present invention, the front and back conductive vias are configured to be located in a region inside the joint portion of the cap body.
As another aspect of the present invention, the front and back conductive vias are configured to be located in a region outside the joint portion of the cap body.

また、本発明の複合センサーパッケージは、裏面側に凹部を備えるシリコン基板と、該シリコン基板の表面側に実装された１個以上のＭＥＭＳセンサーと、該ＭＥＭＳセンサーを覆うようにシリコン基板に接合されたキャップ体と、前記シリコン基板に裏面側の凹部に実装された１個以上の電子部品と、該電子部品を封止するとともにシリコン基板の裏面と同一面をなす樹脂部材と、前記シリコン基板に形成された複数の表裏導通ビアと、を有するような構成とした。
本発明の他の態様として、前記表裏導通ビアは、前記凹部よりも外側の領域であって、前記キャップ体の接合部位よりも内側の領域に位置するような構成とした。
本発明の他の態様として、前記表裏導通ビアは、前記凹部よりも外側で、かつ前記キャップ体の接合部位よりも外側の領域に位置するような構成とした。 The composite sensor package of the present invention is bonded to a silicon substrate so as to cover the MEMS sensor, a silicon substrate having a recess on the back surface side, one or more MEMS sensors mounted on the surface side of the silicon substrate, and the MEMS sensor. A cap member, one or more electronic components mounted in a recess on the back side of the silicon substrate, a resin member that seals the electronic component and is flush with the back side of the silicon substrate, and the silicon substrate A plurality of front and back conductive vias are formed.
As another aspect of the present invention, the front and back conductive vias are configured to be located in a region outside the concave portion and in a region inside the joint portion of the cap body.
As another aspect of the present invention, the front and back conductive vias are configured to be located outside the concave portion and outside the joining portion of the cap body.

このような本発明の複合センサーパッケージは、実装されたＭＥＭＳセンサーや電子部品がキャップ体により覆われるので、実装したＭＥＭＳセンサーや電子部品毎に気密封止や樹脂封止を行う場合に比べて、面方向の広がりが大幅に抑制され、小型化が可能である。また、シリコン基板の表面にＭＥＭＳセンサーを備え、裏面凹部に電子部品を備えた構造では、更なる小型化が可能である。また、接合部材よりも外側の領域に表裏導通ビアを備えた構造では、表裏導通ビアの一部にボイド等の欠陥が存在する場合でも、キャップ体で覆われた内部は良好な気密状態が維持され、汚染が確実に防止されて信頼性が更に高いものとなる。   In such a composite sensor package of the present invention, the mounted MEMS sensor and electronic component are covered with the cap body, so that compared to the case where airtight sealing or resin sealing is performed for each mounted MEMS sensor or electronic component, The spread in the surface direction is greatly suppressed, and downsizing is possible. Further, the structure in which the MEMS sensor is provided on the surface of the silicon substrate and the electronic component is provided in the back surface concave portion can further reduce the size. In addition, in a structure with front and back conductive vias outside the bonding member, the inside covered with the cap body maintains a good airtight state even when there are defects such as voids in part of the front and back conductive vias. As a result, contamination is reliably prevented and reliability is further improved.

以下、本発明の実施の形態について図面を参照して説明する。
図１は、本発明の複合センサーパッケージの一実施形態を示す概略断面図である。図１において、本発明のセンサーパッケージ１は、複数の表裏導通ビア３を備えるシリコン基板２と、このシリコン基板２の一方の面に実装された１個以上のＭＥＭＳセンサー４と１個以上の電子部品５と、これらのＭＥＭＳセンサー４および電子部品５を覆うように接合部材７を介してシリコン基板２に接合されたキャップ体６とを備えている。
複数の表裏導通ビア３は、キャップ体６の接合部位（接合部材７）よりも内側の領域に位置しており、図示しない配線により、所望のＭＥＭＳセンサー４の端子や電子部品５の端子と接続されている。また、表裏導通ビア３の端部には、バンプ９が配設されている。
このような複合センサーパッケージ１は、実装されたＭＥＭＳセンサー４や電子部品５がキャップ体６により覆われ、面方向の広がりが小さく、小型化が可能である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic cross-sectional view showing one embodiment of the composite sensor package of the present invention. In FIG. 1, a sensor package 1 of the present invention includes a silicon substrate 2 having a plurality of front and back conductive vias 3, one or more MEMS sensors 4 mounted on one surface of the silicon substrate 2, and one or more electrons. A component 5 and a cap body 6 bonded to the silicon substrate 2 via a bonding member 7 so as to cover the MEMS sensor 4 and the electronic component 5 are provided.
The plurality of front and back conductive vias 3 are located in a region inside the joining portion (joining member 7) of the cap body 6, and are connected to a desired terminal of the MEMS sensor 4 or a terminal of the electronic component 5 by wiring not shown. Has been. Bumps 9 are disposed at the end portions of the front and back conductive vias 3.
In such a composite sensor package 1, the mounted MEMS sensor 4 and electronic component 5 are covered with the cap body 6, the spread in the surface direction is small, and the size can be reduced.

また、本発明の複合センサーパッケージは、図２に示されるように、複数の表裏導通ビア３が、キャップ体６の接合部位（接合部材７）よりも外側の領域に位置した複合センサーパッケージ１１であってもよい。このような複合センサーパッケージ１１は、実装されたＭＥＭＳセンサー４や電子部品５がキャップ体６により覆われるので、面方向の広がりが小さく、小型化が可能である。また、接合部材７よりも外側の領域に表裏導通ビア３を備えているので、表裏導通ビア３の一部にボイド等の欠陥が存在する場合でも、キャップ体６で覆われた内部は良好な気密状態が維持される。   Further, as shown in FIG. 2, the composite sensor package of the present invention is a composite sensor package 11 in which a plurality of front and back conductive vias 3 are located in a region outside the joint portion (joining member 7) of the cap body 6. There may be. In such a composite sensor package 11, since the mounted MEMS sensor 4 and electronic component 5 are covered with the cap body 6, the spread in the surface direction is small and the size can be reduced. In addition, since the front and back conductive vias 3 are provided in a region outside the bonding member 7, the inside covered with the cap body 6 is satisfactory even when a defect such as a void exists in a part of the front and back conductive vias 3. Airtight state is maintained.

図３は、本発明の複合センサーパッケージの他の実施形態を示す概略断面図である。図３において、本発明のセンサーパッケージ２１は、裏面側に凹部２２ａを有し、複数の表裏導通ビア２３を備えるシリコン基板２２と、このシリコン基板２２の表面側に実装された１個以上のＭＥＭＳセンサー２４と、これらのＭＥＭＳセンサー２４を覆うように接合部材２７を介してシリコン基板２２の表面側に接合されたキャップ体２６とを備えている。さらに、シリコン基板２２に裏面側の凹部２２ａに実装された１個以上の電子部品２５と、これらの電子部品２５を封止するとともにシリコン基板２２の裏面と同一面をなす樹脂部材２８とを備えている。
複数の表裏導通ビア２３は、キャップ体２６の接合部位（接合部材２７）よりも内側の領域に位置しており、図示しない配線により、所望のＭＥＭＳセンサー２４の端子や電子部品２５の端子と接続されている。また、表裏導通ビア２３の端部には、バンプ２９が配設されている。 FIG. 3 is a schematic cross-sectional view showing another embodiment of the composite sensor package of the present invention. In FIG. 3, the sensor package 21 of the present invention includes a silicon substrate 22 having a recess 22 a on the back surface side and a plurality of front and back conductive vias 23, and one or more MEMS mounted on the front surface side of the silicon substrate 22. The sensor 24 and the cap body 26 joined to the surface side of the silicon substrate 22 via the joining member 27 so as to cover the MEMS sensor 24 are provided. Furthermore, one or more electronic components 25 mounted on the silicon substrate 22 in the recess 22a on the back surface side, and a resin member 28 that seals these electronic components 25 and is flush with the back surface of the silicon substrate 22 are provided. ing.
The plurality of front and back conductive vias 23 are located in a region inside the joining portion (joining member 27) of the cap body 26, and are connected to a desired terminal of the MEMS sensor 24 or a terminal of the electronic component 25 by a wiring (not shown). Has been. Bumps 29 are disposed at the end portions of the front and back conductive vias 23.

このような複合センサーパッケージ２１は、シリコン基板の一方の面に実装したＭＥＭＳセンサーや電子部品毎に気密封止や樹脂封止を行う場合に比べて、面方向の広がりが大幅に抑制され、小型化が可能である。
また、本発明の複合センサーパッケージは、図４に示されるように、複数の表裏導通ビア２３が、キャップ体２６の接合部位（接合部材２７）よりも外側の領域に位置した複合センサーパッケージ３１であってもよい。このような複合センサーパッケージ３１は、シリコン基板の一方の面に実装したＭＥＭＳセンサーや電子部品毎に気密封止や樹脂封止を行う場合に比べて、面方向の広がりが大幅に抑制され、小型化が可能である。また、接合部材２７よりも外側の領域に表裏導通ビア２３を備えているので、表裏導通ビア２３の一部にボイド等の欠陥が存在する場合でも、キャップ体２６で覆われた内部は良好な気密状態が維持される。 Such a composite sensor package 21 is significantly smaller than the MEMS sensor mounted on one surface of the silicon substrate and the case where hermetic sealing or resin sealing is performed for each electronic component, and is small in size. Is possible.
Further, as shown in FIG. 4, the composite sensor package of the present invention is a composite sensor package 31 in which a plurality of front and back conductive vias 23 are located in a region outside the joint portion (joint member 27) of the cap body 26. There may be. Such a composite sensor package 31 is greatly reduced in size in the surface direction compared to the case where the MEMS sensor or electronic component mounted on one surface of the silicon substrate is hermetically sealed or resin-sealed. Is possible. Further, since the front and back conductive vias 23 are provided in the region outside the bonding member 27, the inside covered with the cap body 26 is satisfactory even when a defect such as a void exists in a part of the front and back conductive vias 23. Airtight state is maintained.

次に、上記のような本発明の複合センサーパッケージの各部材について説明する。
複合センサーパッケージ１，１１，２１，３１を構成するシリコン基板２，２２は、複数のスルーホール内に表裏導通ビア３，２３が形成されたものである。また、シリコン基板２，２２は、スルーホールの内壁面を含む全面に、二酸化珪素、窒化珪素等の電気絶縁層を備えるものであってもよい。上記のスルーホールは、例えば、内径が１０〜３００μｍの範囲内であってよく、図示のようにシリコン基板２，２２の厚み方向で内径がほぼ一定のストレート形状であってもよく、また、一方の開口径が広いテーパー形状、シリコン基板２の厚み方向の略中央で内径が狭くなっているような形状等であってもよい。また、シリコン基板２，２２は、その厚みが５０〜６００μｍ、好ましくは１５０〜４００μｍの範囲内とすることができる。シリコン基板２，２２の厚みが５０μｍ未満であると、支持体として充分な強度を保持できず、６００μｍを超えると、複合センサーパッケージの薄型化に支障を来たすことになり好ましくない。
尚、シリコン基板２，２２には、ＭＥＭＳセンサー４，２４や電子部品５，２５を実装するために必要なパッド、配線、端子が形成されている。 Next, each member of the composite sensor package of the present invention as described above will be described.
The silicon substrates 2 and 22 constituting the composite sensor package 1, 11, 21 and 31 are formed by forming front and back conductive vias 3 and 23 in a plurality of through holes. The silicon substrates 2 and 22 may be provided with an electrical insulating layer such as silicon dioxide or silicon nitride on the entire surface including the inner wall surface of the through hole. The through hole may have, for example, an inner diameter in the range of 10 to 300 μm, and may have a straight shape with an inner diameter substantially constant in the thickness direction of the silicon substrates 2 and 22 as illustrated. A taper shape having a wide opening diameter or a shape in which the inner diameter is narrow at the approximate center in the thickness direction of the silicon substrate 2 may be used. The silicon substrates 2 and 22 can have a thickness in the range of 50 to 600 μm, preferably 150 to 400 μm. When the thickness of the silicon substrates 2 and 22 is less than 50 μm, sufficient strength as a support cannot be maintained, and when the thickness exceeds 600 μm, the composite sensor package is undesirably thinned.
Note that pads, wirings, and terminals necessary for mounting the MEMS sensors 4 and 24 and the electronic components 5 and 25 are formed on the silicon substrates 2 and 22.

表裏導通ビア３，２３は、例えば、銅、銀、金、タングステン、タンタル等の金属材料、銅粒子、銀粒子等の導電性粒子を含有した公知の導電性ペースト、あるいは、スズ−亜鉛系、スズ−銀系、スズ−ビスマス系、スズ−鉛系等の半田であってよい。また、これらを組み合わせて使用することもできる。
また、複合センサーパッケージ２１，３１を構成するシリコン基板２２の凹部２２ａは、この中に電子部品２５を実装し、樹脂部材２８で封止した状態で、樹脂部材２８がシリコン基板２２の裏面と同一面を構成するような深さ、形状とすることができ、特に限定はされない。 The front and back conductive vias 3 and 23 are, for example, metal materials such as copper, silver, gold, tungsten and tantalum, known conductive pastes containing conductive particles such as copper particles and silver particles, or tin-zinc-based, It may be tin-silver, tin-bismuth, tin-lead solder or the like. Moreover, these can also be used in combination.
The recess 22 a of the silicon substrate 22 constituting the composite sensor package 21, 31 is the same as the back surface of the silicon substrate 22 with the electronic component 25 mounted therein and sealed with the resin member 28. It can be set to a depth and shape that constitute the surface, and is not particularly limited.

複合センサーパッケージ１，１１，２１，３１を構成するＭＥＭＳセンサー４，２４は、特に制限はなく、ＣＣＤ、ＣＭＯＳ等のイメージセンサーや、加速度センサー、圧力センサー、ジャイロセンサー等の各種ＭＥＭＳ（Micro Electro Mechanical System）センサーであってよい。このようなＭＥＭＳセンサー４，２４は、アクティブ面（センサーの所望の検知機能を発現する領域）を保護したり、センサーの稼動を確保するために、アクティブ面に空隙部を設けるように保護材が配設され気密封止されたパッケージ構造であってよい。尚、２個以上のＭＥＭＳセンサーを備える場合には、各ＭＥＭＳセンサーの機能は同一、異なるもの、いずれであってもよい。
また、複合センサーパッケージ１，１１，２１，３１を構成する電子部品５，２５は、特に制限はなく、ＩＣチップ、ＬＳＩチップ、ＬＣＲ回路部品等のいずれか１種または２種以上とすることができる。 The MEMS sensors 4 and 24 constituting the composite sensor package 1, 11, 21, 31 are not particularly limited, and various MEMS (Micro Electro Mechanical) such as an image sensor such as a CCD and a CMOS, an acceleration sensor, a pressure sensor, and a gyro sensor. System) sensor. Such MEMS sensors 4 and 24 are provided with a protective material so as to provide a gap in the active surface in order to protect the active surface (region where the desired detection function of the sensor is expressed) or to ensure the operation of the sensor. The package structure may be arranged and hermetically sealed. When two or more MEMS sensors are provided, the function of each MEMS sensor may be the same or different.
Further, the electronic components 5 and 25 constituting the composite sensor package 1, 11, 21, 31 are not particularly limited, and may be any one type or two or more types such as an IC chip, an LSI chip, and an LCR circuit component. it can.

上記のようなＭＥＭＳセンサー４，２４および電子部品５，２５のシリコン基板上への実装方式には特に制限はない。
複合センサーパッケージ１，１１，２１，３１を構成するキャップ体６，２６の材料は、複合センサーパッケージの用途に応じて適宜選択することができ、例えば、ガラス、シリコン、セラミック等を挙げることができる。また、キャップ体６，２６の形状は、図示例では、周縁部にフランジを備えたものであり、このフランジにおいて接合部材７，２７を介してシリコン基板２，２２に接合されている。しかし、キャップ体６，２６の形状は、図示例に限定されるものではなく、複合センサーパッケージの用途に応じて適宜設定することができる。 There is no particular limitation on the method of mounting the MEMS sensors 4 and 24 and the electronic components 5 and 25 on the silicon substrate as described above.
The material of the cap bodies 6 and 26 constituting the composite sensor package 1, 11, 21, 31 can be appropriately selected according to the use of the composite sensor package, and examples thereof include glass, silicon, and ceramic. . In the illustrated example, the cap bodies 6 and 26 are provided with a flange at the peripheral edge, and are joined to the silicon substrates 2 and 22 via the joining members 7 and 27 at the flange. However, the shape of the cap bodies 6 and 26 is not limited to the illustrated example, and can be appropriately set according to the application of the composite sensor package.

また、接合部材７，２７は、気密性を問わない封止でもよい場合は、例えば、シリコーン樹脂、ポリイミド樹脂、エポキシ樹脂、アクリル樹脂等の絶縁樹脂であってよく、また、これらにガラス、セラミックス等のビーズを含有したものであってもよい。さらに、気密封止を要求される場合には、接合部材８は、ろう材層を金属層で挟持したような多層構造であってもよい。この場合、ろう材層は、融点が４５０℃以下である、いわゆる「軟ろう」であり、例えば、Ｓｎ−Ａｕ合金、Ｓｎ−Ａｇ合金、Ｓｎ−Ｂｉ合金、Ｓｎ−Ｚｎ合金、Ｓｎ−Ｉｎ合金、Ｓｎ−Ｐｂ合金、Ｉｎ−Ｐｂ合金のいずれかからなる層とすることができる。また、金属層は、例えば、Ａｕ／Ｔｉ積層、Ａｕ／Ｃｒ積層、Ｃｕ／Ｔｉ積層、Ｃｕ／Ｃｒ積層等とすることができる。
複合センサーパッケージ２１，３１を構成する樹脂部材２８は、従来から樹脂封止に用いられる樹脂を使用することができ、例えば、シリコーン樹脂、エポキシ樹脂、アクリル樹脂等を挙げることができる。 Further, when the sealing members 7 and 27 may be sealed regardless of hermeticity, for example, they may be insulating resins such as silicone resin, polyimide resin, epoxy resin, acrylic resin, etc., and glass, ceramics, etc. It may contain beads such as. Furthermore, when airtight sealing is required, the joining member 8 may have a multilayer structure in which a brazing material layer is sandwiched between metal layers. In this case, the brazing filler metal layer is a so-called “soft brazing” having a melting point of 450 ° C. or less, for example, Sn—Au alloy, Sn—Ag alloy, Sn—Bi alloy, Sn—Zn alloy, Sn—In alloy. , Sn—Pb alloy, or In—Pb alloy. The metal layer can be, for example, an Au / Ti stack, an Au / Cr stack, a Cu / Ti stack, a Cu / Cr stack, or the like.
As the resin member 28 constituting the composite sensor package 21, 31, a resin conventionally used for resin sealing can be used, and examples thereof include a silicone resin, an epoxy resin, and an acrylic resin.

上述の複合センサーパッケージは、例示であり、本発明は上述の実施形態に限定されるものではない。例えば、図５に示されるように、キャップ体６に隣接してメモリー部品１０をシリコン基板２上に備えた複合センサーパッケージ１′であってもよい。この場合、ＭＥＭＳセンサー４や電子部品５からの情報信号をメモリー１０に格納することが可能である。尚、メモリー部品１０は、図示例のようなスタック構造に限定されるものではない。   The above-described composite sensor package is an example, and the present invention is not limited to the above-described embodiment. For example, as shown in FIG. 5, a composite sensor package 1 ′ having a memory component 10 on the silicon substrate 2 adjacent to the cap body 6 may be used. In this case, information signals from the MEMS sensor 4 and the electronic component 5 can be stored in the memory 10. The memory component 10 is not limited to the stack structure as shown in the illustrated example.

小型で高信頼性の複合センサーパッケージが要求される種々の分野において適用できる。   The present invention can be applied in various fields where a compact and highly reliable composite sensor package is required.

本発明の複合センサーパッケージの一実施形態を示す概略断面図である。It is a schematic sectional drawing which shows one Embodiment of the composite sensor package of this invention. 本発明の複合センサーパッケージの他の実施形態を示す概略断面図である。It is a schematic sectional drawing which shows other embodiment of the composite sensor package of this invention. 本発明の複合センサーパッケージの他の実施形態を示す概略断面図である。It is a schematic sectional drawing which shows other embodiment of the composite sensor package of this invention. 本発明の複合センサーパッケージの他の実施形態を示す概略断面図である。It is a schematic sectional drawing which shows other embodiment of the composite sensor package of this invention. 本発明の複合センサーパッケージの他の実施形態を示す概略断面図である。It is a schematic sectional drawing which shows other embodiment of the composite sensor package of this invention.

符号の説明Explanation of symbols

１，１′，２１，３１，４１…複合センサーパッケージ
２，２２…シリコン基板
３，２３…表裏導通ビア
４，２４…ＭＥＭＳセンサー
５，２５…電子部品
６，２６…キャップ体
７，２７…接合部材
９，２９…バンプ
２２ａ…凹部
２８…樹脂部材 DESCRIPTION OF SYMBOLS 1,1 ', 21,31,41 ... Composite sensor package 2,22 ... Silicon substrate 3,23 ... Front and back conduction vias 4,24 ... MEMS sensor 5,25 ... Electronic component 6,26 ... Cap body 7,27 ... Joint Member 9, 29 ... Bump 22a ... Recess 28 ... Resin member

Claims (6)

シリコン基板と、該シリコン基板の一方の面に実装された１個以上のＭＥＭＳセンサーと１個以上の電子部品と、これらのＭＥＭＳセンサーと電子部品とを覆うようにシリコン基板に接合されたキャップ体と、前記シリコン基板に形成された複数の表裏導通ビアと、を有することを特徴とする複合センサーパッケージ。   A silicon substrate, one or more MEMS sensors and one or more electronic components mounted on one surface of the silicon substrate, and a cap body bonded to the silicon substrate so as to cover these MEMS sensors and electronic components And a plurality of front and back conductive vias formed in the silicon substrate. 前記表裏導通ビアは、前記キャップ体の接合部位よりも内側の領域に位置することを特徴とする請求項１に記載の複合センサーパッケージ。   2. The composite sensor package according to claim 1, wherein the front and back conductive vias are located in a region inside a joint portion of the cap body. 前記表裏導通ビアは、前記キャップ体の接合部位よりも外側の領域に位置することを特徴とする請求項１に記載の複合センサーパッケージ。   2. The composite sensor package according to claim 1, wherein the front and back conductive vias are located in a region outside a joint portion of the cap body. 裏面側に凹部を備えるシリコン基板と、該シリコン基板の表面側に実装された１個以上のＭＥＭＳセンサーと、該ＭＥＭＳセンサーを覆うようにシリコン基板に接合されたキャップ体と、前記シリコン基板に裏面側の凹部に実装された１個以上の電子部品と、該電子部品を封止するとともにシリコン基板の裏面と同一面をなす樹脂部材と、前記シリコン基板に形成された複数の表裏導通ビアと、を有することを特徴とする複合センサーパッケージ。   A silicon substrate having a recess on the back surface side, one or more MEMS sensors mounted on the surface side of the silicon substrate, a cap body joined to the silicon substrate so as to cover the MEMS sensor, and a back surface on the silicon substrate One or more electronic components mounted in the concave portion on the side, a resin member that seals the electronic components and forms the same surface as the back surface of the silicon substrate, and a plurality of front and back conductive vias formed in the silicon substrate, A composite sensor package comprising: 前記表裏導通ビアは、前記凹部よりも外側の領域であって、前記キャップ体の接合部位よりも内側の領域に位置することを特徴とする請求項４に記載の複合センサーパッケージ。   5. The composite sensor package according to claim 4, wherein the front and back conductive vias are located in a region outside the concave portion and in a region inside the joint portion of the cap body. 前記表裏導通ビアは、前記凹部よりも外側で、かつ、前記キャップ体の接合部位よりも外側の領域に位置することを特徴とする請求項４に記載の複合センサーパッケージ。   5. The composite sensor package according to claim 4, wherein the front and back conductive vias are located outside the concave portion and outside the joining portion of the cap body.
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