JP2007212181A - Ic socket, acceleration inspection-use substrate and method for inspecting semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an IC socket, an acceleration inspection-use substrate and a method for inspecting a semiconductor device, which can realize a sufficient heat dissipation effect in an acceleration inspection process. <P>SOLUTION: The IC socket 1 which is set on the acceleration inspection-use substrate, and on which the semiconductor device having a heat dissipation area on its rear face side is mounted, comprises: a means 2 for applying a load voltage to the semiconductor device; and a heat dissipation means 4 whose plane contacts with the heat dissipation area of the semiconductor device. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to accelerated inspection of semiconductor devices.

  In general, burn-in is performed in the manufacturing process of a semiconductor device to screen an initial failure of the semiconductor device. This is because a semiconductor device is mounted on an IC socket, a plurality of IC sockets are installed on a substrate for accelerated inspection, and the semiconductor device is driven under conditions more severe than the rated voltage and rated temperature in a chamber controlled at a predetermined temperature. Thus, the failure time is accelerated and a semiconductor device having an initial failure is extracted (for example, see Patent Document 1).

  At this time, it is necessary to control the temperature in consideration of heat dissipation of the semiconductor device itself. However, as the device is miniaturized, the element is thinned by the SOC technology, and the number of chips is increased, the self-heating amount of the semiconductor device due to leakage current increases There is a problem to do.

Normally, when using a package that radiates heat using a copper lid on the printed circuit board / package surface side, such as T-BGA (Tape Ball Grid Array) or E-BGA (Enhanced Ball Grid Array), heat is radiated on the package surface side. Temperature control can be performed by attaching fins. However, in the case where the package surface is covered with a mold resin having a high thermal resistance, such as P-BGA (Plastic Ball Grid Array), it is difficult to dissipate heat from the surface, and heat is dissipated from the thermal vias on the back surface. However, since a load voltage is normally applied from the back surface of the semiconductor device via an IC socket, there is a problem that a sufficient heat dissipation effect cannot be obtained.
JP 2000-30825 A

  An object of the present invention is to provide an IC socket, an acceleration inspection substrate, and a semiconductor device inspection method capable of obtaining a sufficient heat dissipation effect in the acceleration inspection process.

  According to one aspect of the present invention, there is provided an IC socket in which a semiconductor device having a heat dissipation region is mounted on the back surface side and is installed on a substrate for accelerated inspection, the means for applying a load voltage to the semiconductor device, An IC socket is provided that includes heat dissipation means in surface contact with the heat dissipation area.

  According to another aspect of the present invention, there is provided an acceleration inspection substrate in which an IC socket having a heat dissipation mechanism connected to a heat dissipation region of a semiconductor device having a heat dissipation region on the back side is provided, and a load voltage is applied to the IC socket. There is provided an accelerated inspection substrate comprising means for applying and heat dissipating means in surface contact with the heat dissipating mechanism.

  According to another aspect of the present invention, a step of mounting a semiconductor device having a heat dissipation area on the back side on an IC socket, bringing the heat dissipation area into surface contact with the heat dissipation means of the IC socket, and the IC socket for acceleration inspection A semiconductor comprising: a step of installing on a substrate; a step of applying a load voltage to the semiconductor device from the substrate for accelerated inspection; and a step of radiating heat generated in the semiconductor device by the load voltage through a heat radiating means. A device inspection method is provided.

  Further, according to one aspect of the present invention, a step of mounting a semiconductor device having a heat dissipation region on the back surface side on an IC socket, connecting the heat dissipation region and a heat dissipation mechanism in the IC socket, and the IC socket with an acceleration inspection substrate A step of bringing the area including the heat dissipation mechanism and the heat dissipation means in the acceleration inspection substrate into surface contact, a step of applying a load voltage to the semiconductor device from the acceleration inspection substrate, and a heat generated in the semiconductor device by the load voltage There is provided a method for inspecting a semiconductor device comprising a step of radiating heat through a heat radiating mechanism and a heat radiating means.

  According to one embodiment of the present invention, it is possible to obtain a sufficient heat dissipation effect in the accelerated inspection process of semiconductor devices.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
FIG. 1 shows a cross-sectional view of the IC socket of this embodiment, and FIG. 2 shows a top view thereof. As shown in the figure, a plurality of pogo pins 2 for applying a load voltage from the back surface of the semiconductor device are formed so as to penetrate the semiconductor device mounting surface 1a and the back surface 1b of the IC socket body 1. At the center of the IC socket main body 1, heat radiation fins 4 for heat radiation are provided so as to penetrate the semiconductor device mounting surface 1a and the back surface 1b and come into surface contact with the heat radiation region where the thermal vias of the semiconductor device are formed. ing. The radiating fin 4 is made of a metal having high thermal conductivity such as Al, for example, and has, for example, a plurality of fins in which the upper part is formed in a bulk shape and the lower part is provided, for example, at equal intervals, and the upper part is a contact pin connected to a semiconductor device 3 has an integrated structure. The IC socket body 1 can be attached and detached.

  For example, a semiconductor device having a P-BGA package structure is mounted on such an IC socket as a semiconductor device to be inspected. As shown in FIG. 3, a semiconductor device having a P-BGA package structure has a chip (semiconductor element) 13 mounted on a printed board 11 with a mount material 12 interposed between the electrodes of the chip 13 and bonding wires. 14 is connected to a solder ball 16 formed on the back side of the printed board 11 through a through hole 15 formed in the printed board 11. The chip 13 and the bonding wire 14 are covered with a mold resin 17. A thermal via 18 is formed in a region immediately below the chip 13 of the printed circuit board 11. Heat generated from the chip 13 is released through the thermal via 18 and a thermal ball 19 connected thereto.

  After mounting a semiconductor device having such a P-BGA package structure on an IC socket, a plurality of (for example, 12) IC sockets are installed on an acceleration inspection substrate for performing an acceleration inspection.

  FIG. 4 shows a cross section of the acceleration inspection substrate. In the component mounting portion on which the IC socket is mounted, the burn-in substrate 21 on which a predetermined wiring is printed on the front surface to apply a load voltage from a predetermined terminal of the semiconductor device, and the wiring on the burn-in substrate 21 is protected on the back surface. A back cover 22 is provided, and a space therebetween is hollow. An opening 23 is formed in the center of the component mounting portion for allowing the heat sink fin of the IC socket to pass therethrough.

  An IC socket on which a semiconductor device having a P-BGA package structure is mounted on such a substrate for accelerated inspection, and is inserted into a chamber having a temperature controller and capable of maintaining a sealed state. A burn-in is performed by applying a load voltage having a predetermined pattern and pulse controlled by a pattern generator and a driver from a voltage application power source and controlling the voltage to a set temperature.

  When the burn-in is performed, the heat generated above the set temperature due to the leakage current of the semiconductor device is released from the heat radiation fin 4 from the thermal ball 19 through the contact pin 3.

  By using an IC socket provided with such heat radiation fins, even when the semiconductor device generates heat at a temperature higher than the set temperature during burn-in, heat can be efficiently radiated. In addition, the burn-in substrate of the normal acceleration inspection substrate is formed according to the product because the circuit is different for each product, but the opening newly formed in this embodiment is also formed at the time of forming the burn-in substrate. It ’s fine. In addition, if the radiating fins are detachable, the radiating fins can be shared if they are products of the same package.

(Embodiment 2)
FIG. 5 shows a cross-sectional view of the acceleration inspection substrate of the present embodiment. As shown in the figure, in a component mounting portion where an IC socket is mounted, a burn-in substrate 31 on which a predetermined wiring is printed on a front surface to apply a load voltage from a predetermined terminal in a semiconductor device, and a burn-in surface on a rear surface. A back cover 32 for protecting the wiring of the substrate 21 is provided, and a space therebetween is hollow. At the center of the component mounting portion, a heat radiating fin 34 to which a receiving pad 33 of a thermal ball contact pin in the IC socket is attached is installed. As in the first embodiment, the radiating fins 34 are made of a metal having high thermal conductivity such as Al, and have a structure in which, for example, the upper part has a plurality of fins provided in a bulk shape and the lower part is provided, for example, at equal intervals.

  As in the first embodiment, an IC socket on which a semiconductor device having a P-BGA package structure is mounted is installed on such an acceleration inspection substrate.

  At this time, an IC socket having a conventional structure as shown in FIG. 6 can be used. That is, as shown in the figure, a plurality of pogo pins 42 for applying a load voltage from the back surface of the semiconductor device are formed so as to penetrate the semiconductor device mounting surface 41a and the back surface 41b of the IC socket body 41. A thermal ball contact pin 43 connected to the thermal ball of the semiconductor device is formed at the center of the IC socket body 41, and heat can be radiated through this.

  An IC socket on which a semiconductor device having such a P-BGA package structure is mounted on an acceleration inspection substrate, and is inserted into a chamber having a temperature controller and capable of maintaining a sealed state, as in the first embodiment. To do. By applying a load voltage having a predetermined pattern and pulse controlled by a pattern generator and a driver from a power supply for voltage application, applying a load voltage and controlling to a set temperature atmosphere, the burn-in I do.

  When the burn-in is performed, heat generated above the set temperature due to the leakage current of the semiconductor device or the like is released from the thermal fin 34 through the thermal ball contact pin 43 and the receiving pad 33 from the thermal ball of the semiconductor device.

  By using the acceleration inspection substrate provided with such heat radiation fins, even when the semiconductor device generates heat at a temperature higher than the set temperature during burn-in, heat can be efficiently radiated. In addition, since the radiation fins are attached to the burn-in board side, the current IC socket can be used as it is, and the cost is low. Remodeling can also be easily performed.

  The present invention is not limited to the embodiment described above. Various other modifications can be made without departing from the scope of the invention.

The figure which shows the cross section of the IC socket in 1 aspect of this invention. The figure which shows the upper surface of the IC socket in 1 aspect of this invention. The figure which shows the cross section of the semiconductor device of the P-BGA package structure used in 1 aspect of this invention. The figure which shows the cross section of the board | substrate for acceleration inspection used in 1 aspect of this invention. FIG. 6 is a cross-sectional view of an acceleration inspection substrate in one embodiment of the present invention. The figure which shows the cross section of IC socket.

Explanation of symbols

1, 41 IC socket body 2, 42 Pogo pin 3 Contact pin 4, 34 Radiation fin 11 Printed circuit board 12 Mounting material 13 Chip 14 Bonding wire 15 Through hole 16 Solder ball 17 Mold resin 18 Thermal via 19 Thermal ball 21, 31 Burn-in substrate 22 32 Back cover 23 Opening 33 Receiving pad 43 Thermal ball contact pin

Claims (5)

An IC socket in which a semiconductor device having a heat dissipation area is mounted on the back side and is installed in an acceleration inspection device,
Means for applying a load voltage to the semiconductor device;
An IC socket comprising a heat dissipation means that makes surface contact with the heat dissipation area of the semiconductor device. An acceleration inspection apparatus in which an IC socket having a heat dissipation mechanism connected to a heat dissipation area of a semiconductor device is installed,
Means for applying a load voltage to the IC socket;
A substrate for accelerated inspection, comprising heat radiating means in surface contact with the heat radiating mechanism. Mounting a semiconductor device having a heat dissipation area on the back side on an IC socket, and bringing the heat dissipation area into surface contact with the heat dissipation means of the IC socket;
Installing the IC socket on a substrate for accelerated inspection;
Applying a load voltage to the semiconductor device from the accelerated inspection substrate;
A method for inspecting a semiconductor device, comprising the step of radiating heat generated in the semiconductor device by the load voltage through the heat radiating means. Mounting a semiconductor device having a heat dissipation area on the back side in an IC socket, and connecting the heat dissipation area and a heat dissipation mechanism in the IC socket;
Installing the IC socket on the acceleration inspection substrate, and bringing the area including the heat dissipation mechanism into contact with the heat dissipation means in the acceleration inspection substrate; and
Applying a load voltage to the semiconductor device from the accelerated inspection substrate;
A method for inspecting a semiconductor device, comprising the step of radiating heat generated in the semiconductor device by the load voltage through the heat dissipation mechanism and the heat dissipation means.   The semiconductor device inspection method according to claim 3, wherein the semiconductor device has a P-BGA package structure.

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