JP2007204799A5

JP2007204799A5 -

Info

Publication number: JP2007204799A5
Application number: JP2006023397A
Authority: JP
Filing date: 2006-01-31
Publication date: 2009-03-19
Anticipated expiration: 2026-01-31

Description

上記目的を達成するため、この発明の第１の観点に係る真空装置は、
真空槽と、成膜対象の基板を搭載する手段と、前記真空槽内に配置され、蒸着材料を蒸発させる手段と、該真空槽内に配置される電極と、該電極と真空槽との間に高周波電力を供給し、真空槽内のガスをイオン化するための給電手段と、高周波電力の印加により前記電極に発生するセルフバイアス電圧を検出し、検出したセルフバイアス電圧と蒸発中の蒸着材料用の目標値との偏差を小さくするように、前記給電手段の出力する高周波電力を制御し、蒸着材料が変更されたときに、変更後の蒸着材料用に目標値を切り替える制御手段と、から構成される。 In order to achieve the above object, a vacuum apparatus according to the first aspect of the present invention provides:
A vacuum chamber; means for mounting a substrate to be deposited; means for evaporating vapor deposition material disposed in the vacuum chamber; an electrode disposed in the vacuum chamber; and between the electrode and the vacuum chamber A high-frequency power supply to ionize the gas in the vacuum chamber, and a self-bias voltage generated at the electrode by the application of the high-frequency power is detected, and the detected self-bias voltage and the evaporation material being evaporated Control means for controlling the high-frequency power output from the power supply means so as to reduce the deviation from the target value, and switching the target value for the changed vapor deposition material when the vapor deposition material is changed. Is done.

前記制御手段は、例えば、前記セルフバイアス電圧が一定になるように、前記給電手段の出力する高周波電力を制御する。
あるいは、前記制御手段は、例えば、成膜中に、前記目標値を変動させてもよい。 For example, the control unit controls the high-frequency power output from the power feeding unit so that the self-bias voltage is constant.
Alternatively, the control means may vary the target value during film formation, for example.

前記蒸着材料からの蒸発粒子の前記基板への付着をイオンによりアシストする。 Adhesion of evaporated particles from the deposition material to the substrate is assisted by ions.

上記目的を達成するため、この発明の第２の観点に係る成膜方法は、
真空槽と該真空槽内に配置される電極との間に高周波電圧を印加して、真空槽内に供給されたガスをイオン化し、該イオンにより第１の蒸発源からの蒸着粒子の基板への付着をアシストして成膜し、高周波電力の印加により前記真空槽と前記電極との間に発生するセルフバイアス電圧を検出し、検出したセルフバイアス電圧と前記第１の蒸発源用の目標値との偏差が小さくなるように高周波電力を制御し、蒸発源を前記第１の蒸発源から、前記第１の蒸発源とは材料の異なる第２の蒸発源に変更し、セルフバイアス電圧の目標値を第１の蒸発源用の目標値から第２の蒸発源用の目標値に切り替え、真空槽と該真空槽内に配置される電極との間に高周波電圧を印加して、真空槽内に供給されたガスをイオン化し、該イオンにより第２の蒸発源からの蒸着粒子の基板への付着をアシストして成膜し、高周波電力の印加により前記真空槽と前記電極との間に発生するセルフバイアス電圧を検出し、検出したセルフバイアス電圧と前記第２の蒸発源用の目標値との偏差が小さくなるように高周波電力を制御する、ことを実行することにより、基板上に前記第１の蒸発源からの蒸着粒子の堆積膜と前記第２の蒸発源からの蒸着粒子の堆積膜との積層膜を含む膜を形成する、
ことを特徴とする。
また、前記蒸発源の切り替え及びセルフバイアス電圧の目標値の切り替えと、切り替え後の蒸発源及びセルフバイアス電圧の目標値による成膜処理と、を繰り返し、基板上に前記第１の蒸発源からの蒸着粒子の堆積膜と前記第２の蒸発源からの蒸着粒子の堆積膜との積層膜を、複数層形成する、ようにしてもよい。 In order to achieve the above object, a film forming method according to a second aspect of the present invention includes:
A high-frequency voltage is applied between the vacuum chamber and the electrode disposed in the vacuum chamber to ionize the gas supplied in the vacuum chamber, and the ions to the substrate of vapor deposition particles from the first evaporation source The self-bias voltage generated between the vacuum chamber and the electrode is detected by applying high-frequency power, and the detected self-bias voltage and the target value for the first evaporation source are detected. controlling a high-frequency power so that the deviation is reduced with, change the evaporation source from said first evaporation source, different from the second evaporation source of the the first evaporation source material, the target self-bias voltage The value is switched from the target value for the first evaporation source to the target value for the second evaporation source, and a high frequency voltage is applied between the vacuum chamber and the electrode disposed in the vacuum chamber, The gas supplied to the gas is ionized, and the ions are used to generate a second evaporation source. A film is formed by assisting adhesion of the vapor deposition particles to the substrate, a self-bias voltage generated between the vacuum chamber and the electrode is detected by applying a high-frequency power, and the detected self-bias voltage and the second By controlling the high frequency power so that the deviation from the target value for the evaporation source becomes small, the deposition film of the vapor deposition particles from the first evaporation source and the second evaporation source on the substrate Forming a film including a laminated film with a deposited film of vapor-deposited particles from
It is characterized by that.
Further, the switching of the evaporation source and the target value of the self-bias voltage, and the film forming process using the target value of the evaporated source and the self-bias voltage after the switching are repeated, and the first evaporation source is applied on the substrate. A plurality of stacked films of a deposited film of deposited particles and a deposited film of deposited particles from the second evaporation source may be formed.

本発明によれば、蒸着材料（蒸発源）の変更に伴ってセルフバイアス電圧の目標値を自動的に変更して、セルフバイアス電圧と目標値との偏差が小さくなるように高周波電力を制御することにより、積層膜の成膜の再現性を向上させ、所望の特性を有する素子を精度よく作製することが可能となる。 According to the present invention, the target value of the self-bias voltage is automatically changed as the deposition material (evaporation source) is changed, and the high-frequency power is controlled so that the deviation between the self-bias voltage and the target value is reduced. As a result, the reproducibility of the formation of the laminated film can be improved, and an element having desired characteristics can be manufactured with high accuracy.

Claims

A vacuum chamber;
Means for mounting a substrate to be deposited;
Means for evaporating the vapor deposition material disposed in the vacuum chamber;
An electrode disposed in the vacuum chamber;
A power supply means for supplying high-frequency power between the electrode and the vacuum chamber and ionizing a gas in the vacuum chamber;
The self-bias voltage generated in the electrode by the application of the high-frequency power is detected, and the high-frequency power output from the power supply means is reduced so as to reduce the deviation between the detected self-bias voltage and the target value for the evaporation material being evaporated. Control means for controlling and switching the target value for the changed vapor deposition material when the vapor deposition material is changed ;
A vacuum apparatus comprising:

The control means controls the high-frequency power output from the power feeding means so that the self-bias voltage is constant.
The vacuum apparatus according to claim 1.

The vacuum apparatus according to claim 1, wherein the control unit varies the target value during film formation.

Assisting the attachment of the evaporated particles from the deposition material to the substrate by ions,
The vacuum apparatus according to claim 1 , 2 or 3 .

A high-frequency voltage is applied between the vacuum chamber and the electrode disposed in the vacuum chamber to ionize the gas supplied in the vacuum chamber, and the ions to the substrate of vapor deposition particles from the first evaporation source The self-bias voltage generated between the vacuum chamber and the electrode is detected by applying high-frequency power, and the detected self-bias voltage and the target value for the first evaporation source are detected. Control the high frequency power so that the deviation from
The evaporation source is changed from the first evaporation source to a second evaporation source made of a material different from that of the first evaporation source, and the target value of the self-bias voltage is changed from the target value for the first evaporation source to the second value. Switch to the target value for the evaporation source
A high-frequency voltage is applied between the vacuum chamber and the electrode disposed in the vacuum chamber to ionize the gas supplied into the vacuum chamber, and the ions are vaporized particles from the second evaporation source to the substrate. The self-bias voltage generated between the vacuum chamber and the electrode is detected by applying high-frequency power, and the detected self-bias voltage and the target value for the second evaporation source are detected. The high frequency power is controlled so that the deviation from
By performing this, a film including a stacked film of a deposition film of vapor deposition particles from the first evaporation source and a deposition film of vapor deposition particles from the second evaporation source is formed on the substrate.
A film forming method characterized by the above.

The evaporation source switching and switching of the target value of the self-bias voltage are repeated, and the film forming process using the evaporation source and the target value of the self-bias voltage after switching are repeated,
A plurality of stacked films of a deposition film of vapor deposition particles from the first evaporation source and a deposition film of vapor deposition particles from the second evaporation source are formed on a substrate;
The film forming method according to claim 5.