JP2007200932A5 - - Google Patents
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- Publication number
- JP2007200932A5 JP2007200932A5 JP2006014216A JP2006014216A JP2007200932A5 JP 2007200932 A5 JP2007200932 A5 JP 2007200932A5 JP 2006014216 A JP2006014216 A JP 2006014216A JP 2006014216 A JP2006014216 A JP 2006014216A JP 2007200932 A5 JP2007200932 A5 JP 2007200932A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- ingan
- semiconductor device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 211
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 claims description 199
- 239000000758 substrate Substances 0.000 claims description 95
- 238000004519 manufacturing process Methods 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 38
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 239000008151 electrolyte solution Substances 0.000 claims description 22
- 239000000243 solution Substances 0.000 claims description 17
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Inorganic materials [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 16
- 230000001678 irradiating Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 8
- 229910052753 mercury Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 description 29
- 239000010980 sapphire Substances 0.000 description 29
- 229910002601 GaN Inorganic materials 0.000 description 28
- 238000000034 method Methods 0.000 description 11
- 238000000605 extraction Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000005253 cladding Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910004541 SiN Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910001361 White metal Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000000875 corresponding Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000010969 white metal Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- -1 or the like Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006014216A JP4804930B2 (ja) | 2006-01-23 | 2006-01-23 | 窒化物半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006014216A JP4804930B2 (ja) | 2006-01-23 | 2006-01-23 | 窒化物半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007200932A JP2007200932A (ja) | 2007-08-09 |
| JP2007200932A5 true JP2007200932A5 (ko) | 2009-03-05 |
| JP4804930B2 JP4804930B2 (ja) | 2011-11-02 |
Family
ID=38455260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006014216A Expired - Fee Related JP4804930B2 (ja) | 2006-01-23 | 2006-01-23 | 窒化物半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4804930B2 (ko) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009017229A1 (ja) | 2007-08-01 | 2009-02-05 | Nec Corporation | 動画像データ配信システム、その方法及びそのプログラム |
| JP5182189B2 (ja) * | 2009-03-27 | 2013-04-10 | 富士通株式会社 | 半導体装置の製造方法 |
| EP2416387A4 (en) | 2009-04-02 | 2012-12-12 | Panasonic Corp | NITRIDE SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREOF |
| JP5397042B2 (ja) * | 2009-06-26 | 2014-01-22 | 富士通株式会社 | 半導体装置の製造方法 |
| JP4909448B2 (ja) * | 2010-04-01 | 2012-04-04 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
| US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
| US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
| US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
| US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
| US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3498577B2 (ja) * | 1998-07-07 | 2004-02-16 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| US6455340B1 (en) * | 2001-12-21 | 2002-09-24 | Xerox Corporation | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff |
-
2006
- 2006-01-23 JP JP2006014216A patent/JP4804930B2/ja not_active Expired - Fee Related
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