JP2007200831A - Superconductor base material and method for fabrication thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a superconductor base material and a method for fabrication thereof, focusing on a ceramic superconductor like a superconducting oxide or the other superconductor requiring orientational control. <P>SOLUTION: This base material comprises a metal core layer and an alloy layer which is formed at one or both surfaces of the core layer with Ni of 90 at.% or more in a way that the plane ä1, 0, 0} of crystal grains constituting the alloy metal is parallel to the above surface, and the crystal grain axis <0, 0, 1> is oriented in a predetermined direction. In addition, a presented method for fabricating this superconductor base material comprises a rolling step for rolling the superconductor base material at a processing rate of 90% or more; and a heat treatment step for holding and treating the rolled base material for 30 minutes to 10 hours at a temperature from 900°C to 1,200°C within an ambient atmosphere of mix gas produced by mixing argon and hydrogen, in a way that the proportion of hydrogen to argon is 2 to 5 vol.%. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a base material for a superconductor and a method for manufacturing the base material, and more particularly, to a ceramic superconductor such as an oxide superconductor, a base material for a superconductor that requires other orientation control, and a method for manufacturing the same.

  Conventionally, when a superconducting material is formed by forming a ceramic superconductor layer such as an oxide superconductor on a metal substrate, in order to obtain the highest possible superconducting characteristics, the plane orientation of the crystal grains in the superconductor layer is The superconductor layer is formed so as to be oriented in the same direction. In addition, a technique is known in which superconducting properties are further improved by forming a superconductor layer so as to align not only the plane direction but also the crystal axis direction so-called biaxial orientation (see, for example, Patent Document 1).

When obtaining a biaxially oriented superconductor layer, a biaxially oriented so-called biaxially oriented polycrystalline metal substrate (hereinafter simply referred to as a biaxially oriented metal substrate) is usually used as the metal base material. An intermediate layer (hereinafter, an intermediate layer made of an oxide is referred to as an oxide intermediate layer) is formed by stacking easily oriented oxides such as CeO ₂ , YSZ (Yttria Stabilized Zirconia), and Y ₂ O ₃ . A layer made of an oxide superconductor such as so-called YBCO (hereinafter referred to as an oxide superconductor layer) is formed and oriented on the top.

  Here, as a base material conventionally used for superconducting material formation, in addition to a single metal or a single alloy, a surface of a metal Ni layer around a core layer made of a single metal or a single alloy is used. There was a biaxially oriented metal substrate such as a composite metal base material composed of a core layer and a surface alloy layer on which an alloy layer was formed. Hereinafter, the alloy layer on the surface composed of the metal Ni layer is referred to as Ni clad, and the composite metal base material having the alloy layer on the surface is referred to as Ni clad substrate. Even when a superconductor layer made of an oxide (hereinafter referred to as an oxide superconductor layer) is formed on a composite metal substrate such as a Ni clad substrate, it is usual to produce a superconducting material having sufficiently high superconducting characteristics. It was difficult and could not be produced at low cost.

When an oxide superconductor layer having high superconducting properties is formed on a Ni clad substrate, the crystal grains in the oxide superconductor layer are usually required to have a high degree of orientation. Similarly, a biaxially oriented metal substrate is also a metal. Those having a high degree of biaxial orientation of crystal grains are used. The oxide intermediate layer epitaxially grown on the biaxially oriented metal substrate is also required to have a crystal grain orientation degree equal to or higher than that of the biaxially oriented metal substrate. Here, in the case of a Y-based oxide superconductor such as so-called YBCO, the above-mentioned degree of orientation is the (1,1,1) plane of X-ray diffraction obtained by using the θ-2θ method and the (2,0,0). ) It is defined as follows using the intensity of two peaks from the surface.
P = P ₂ / (P ₁ + P ₂ ) × 100
Here, P is the degree of orientation expressed in%, P ₁ is the intensity of the peak obtained by diffraction on the (1,1,1) plane, and P ₂ is on the (2,0,0) plane. It is the intensity of the peak obtained by diffraction. The degree of orientation P is usually required to be 90% or more, and the degree of orientation of 90% or more is generally referred to as a high degree of orientation.

In addition, the above-mentioned biaxially oriented metal substrate usually needs to have a half-width of spot spread within 8 ° in an X-ray pole figure as a measure of orientation. In order to form an intermediate layer (formed on the upper surface of the alloy layer) having an orientation degree P of 90% or more and a biaxial orientation degree of 8 ° or less on a biaxially oriented metal substrate, a film forming temperature of 500 to 600 ° C. In addition, film formation conditions are required such that the degree of vacuum of the film formation atmosphere is about 1 × 10 ⁻³ Pa and the film formation rate is about 0.3 nm / s or less.

Under such intermediate layer deposition conditions, mass production could not be performed, for example, because the deposition rate was low. For example, in order to enable mass production of the intermediate layer, the degree of vacuum is about 5 × 10 ⁻² Pa or less, the temperature is in the range of about 500 to 900 ° C., and the film formation rate is about 1 nm / s or more. Conditions are usually necessary. In addition, the film quality of the intermediate layer produced under the conventional constrained film formation conditions is that the degree of orientation P of the oxide superconductor layer formed thereon is not sufficient, and the IBAD (Ion Beam Assist Deposition) method is used. There is a problem that a high critical current density cannot be obtained over a wide range in the longitudinal direction as compared with the film formed by using the film (see, for example, Non-Patent Document 1).

  Here, as a method for forming an intermediate layer having excellent film quality, a method using a special single alloy substrate is known. This is a substrate provided with an alloy layer oriented with an alloy such as Ni-W as a material, excellent in epitaxial growth of the intermediate layer, and has a high degree of orientation in the stack of oxide superconductor layers, The film forming conditions can also be set within a range where mass production is possible.

Japanese Patent Laid-Open No. 11-3620 Yasunori Sudo, Kazuomi Enomoto et al., “Long YBCO Superconducting Wire by IBAD / PLD Method”, Low Temperature Engineering, Vol. 39, No. 11, pp. 536-540, 2004

  However, the conventional Ni clad or single alloy substrate has a problem that the substrate strength required when manufacturing a long superconducting material is low, and the AC loss increases due to magnetism. Here, the substrate strength is usually required to have a stress (hereinafter referred to as 0.2% proof stress) at which the strain becomes 0.2% when an external force is applied at room temperature of 500 MPa or more. Further, the magnetism of the substrate is required to have a saturation magnetization at 77K of 0.3 T or less. However. The conventional single alloy substrate has a 0.2% proof stress of about 200 MPa and a saturation magnetization of 77 K of about 0.4 T, and is not suitable for the production of a superconducting material for alternating current.

  That is, when a long superconducting material is manufactured by a reel-to-reel method that is normally performed in mass production, the single alloy substrate is exposed to a high temperature environment of about 600 to 900 ° C. while being pulled. As a result, the crystal growth was promoted and at the same time the single alloy substrate was annealed, and the substrate strength was reduced. Then, the degree of orientation of the single alloy substrate is reduced by the strain generated during winding, and the degree of orientation of the oxide intermediate layer and the oxide superconductor layer on the single alloy substrate is reduced. In addition, in the conventional single alloy substrate, in order to make the substrate strength and the degree of orientation as high as possible, means such as mixing elements such as Pd and Pt, and increasing the thickness of the single alloy substrate are taken. The cost could not be lowered and it was not suitable for mass production. In addition, it is difficult to increase the orientation with a single alloy substrate having a saturation magnetization of 0.3 T or less.

  The present invention has been made to solve such problems, and by reducing the influence of annealing in the manufacturing process, the substrate strength can be improved and the degree of orientation of the oxide intermediate layer can be maintained high, and high orientation can be achieved. An object of the present invention is to provide a base material for a superconductor capable of being mass-produced suitable for alternating current application and a manufacturing method thereof.

According to a first aspect of the present invention, there is provided a core layer made of metal and Ni formed on one or both surfaces of the core layer at 90 at. % Of the alloy layer, wherein the {1, 0, 0} plane of the crystal grains is parallel to the surface and the <0, 0, 1> axis is oriented in a predetermined direction. This is a base material for a superconductor.
Here, the metal includes a single metal and an alloy, and so on.

According to a second aspect of the present invention, the superconductor substrate has a tape-like shape, and the alloy layer has a (1, 0, 0) plane of crystal grains parallel to the tape surface. The <0, 0, 1> axis is oriented in the longitudinal direction of the tape.
Here, the tape surface refers to the surface on which the intermediate layer is formed on the superconductor substrate or the opposite surface.

  According to a third aspect of the present invention, the core layer contains at least Ni, and one or more elements of W, Mo, Cr, V, Fe, and Cu are added in a total amount of 1 to 80 at. % Is a base material for a superconductor.

  According to a fourth aspect of the present invention, there is provided a substrate for a superconductor, wherein the core layer is made of a nonmagnetic metal material.

  According to a fifth aspect of the present invention, the alloy layer contains at least Ni, and any one or more of W, Mo, Cr, V, Fe, and Cu are added in a total amount of 0.5 to 10 at. . % Is a base material for a superconductor.

  According to a sixth aspect of the present invention, there is provided a substrate for a superconductor, wherein the grain size of the crystal grains in the alloy layer is in the range of 10 to 80 μm.

  According to a seventh aspect of the present invention, there is provided the base material for a superconductor, wherein a total thickness of one surface or both surfaces of the alloy layer is equal to or less than a thickness of the core layer.

  According to an eighth aspect of the present invention, the alloy layer and the core layer contain W, and the W concentration of the alloy layer is 0.5 to 10 at. %, And lower than the W concentration of the core layer.

  According to a ninth aspect of the present invention, there is provided a superconductor substrate comprising a diffusion preventing layer for preventing diffusion of an element between the core layer and the alloy layer.

According to a tenth aspect of the present invention, there is provided a core layer made of metal, and Ni formed on one or more surfaces of the core layer at 90 at. %, A rolling process for forming a base material made of an alloy layer containing 90% or more of the processing rate and a base material rolled in the rolling process at a temperature of 900 to 1200 ° C., a mixed gas of argon and hydrogen And maintained for 30 minutes to 10 hours in an atmosphere where the ratio of hydrogen to argon is 2 to 5 vol%, and the (1,0,0) plane of the crystal grains of the alloy layer is along the rolling plane and <0 , 0,1> a heat treatment step for orienting the axis to face the rolling direction.
Here, the core layer preferably contains Ni.

  According to an eleventh aspect of the present invention, in the rolling step, the member to be the core layer is made of 90 at. Ni formed on one or more surfaces of the member. It is the manufacturing method of the base material for superconductors characterized by being the process of including and rolling with the alloy layer containing% or more.

  According to a twelfth aspect of the present invention, the rolling step is a step of rolling by sandwiching a plate-like member serving as the core layer between a plurality of plate-like members serving as the alloy layers. This is a method for producing a superconductor substrate.

  A thirteenth aspect of the present invention is a superconductor substrate characterized by being a step of sandwiching and rolling a plate-like member serving as the core layer between a plurality of plate-like members serving as the surface alloy layers. It is a manufacturing method.

According to a fourteenth aspect of the present invention, there is provided a core layer made of a metal and Ni formed on one surface or both surfaces of the core layer at 90 at. A rolling step for rolling a base material having a surface alloy layer composed of an alloy layer containing at least 90% of a processing rate of 90% or more;
The base material rolled in the rolling step is held for 30 minutes to 10 hours in an atmosphere of a mixed gas of argon and hydrogen at a temperature of 900 to 1200 ° C. and a ratio of hydrogen to argon of 2 to 5 vol %. In the method of manufacturing a superconductor, an intermediate layer made of an oxide is formed on the surface of the alloy layer of the superconductor substrate manufactured by a heat treatment step, and an oxide superconducting layer is further formed on the intermediate layer. is there.

  According to the present invention, the core layer is formed using a heat-resistant metal material, and the surface thereof is formed of an alloy layer. Therefore, the influence of annealing in the manufacturing process can be reduced, the substrate strength can be improved, and the alloy The degree of orientation of the oxide intermediate layer formed on the layer can be maintained high, and the magnetic properties of the entire substrate can be reduced while maintaining the high orientation, enabling mass production suitable for alternating current applications. The base material and the manufacturing method of the base material can be realized.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic view showing a cross-sectional structure of a substrate according to an embodiment of the present invention. In FIG. 1, a base material 1 includes a core layer 10 made of a heat-resistant alloy containing Ni, and Ni is formed on the surface of the core layer 10 with 90 at. And an alloy layer 20 that forms a surface made of an alloy layer containing at least%.

  The core layer 10 is composed of a heat-resistant strength support base material for maintaining the substrate strength of the base material 1, and any one or more of W, Mo, Cr, V, Fe, and Cu in addition to Ni. 1 to 80 at. % Material. The core layer 10 has a thickness of, for example, about 50 μm or more. Since the core layer 10 is mainly composed of Ni and made of a nonmagnetic metal element, it is possible to reduce the AC loss of the obtained superconducting material. Moreover, regarding the workability of the base material, the strength supporting base material can be improved by combining a plurality of types of alloy layers having different substrate strengths. Specifically, workability can also be improved by combining Ni—W alloys having different W concentrations.

  The alloy layer 20 forming the surface is made of 90 at. %, And in addition to Ni, any one or more of W, Mo, Cr, V, Fe, and Cu are added in a total amount of 0.5 to 10 at. % Is preferable. When both the surface alloy layer 20 and the core layer 10 contain W, the W concentration of the surface alloy layer 20 is lower than the W concentration of the core layer 10 by 0.5 to 8 at. It is set to be within the range of%. That is, heat resistance and workability can be ensured by making the W concentration in the surface alloy layer 20 lower than the W concentration in the core layer 10 formed inside.

  Further, the surface alloy layer 20 has a thickness of, for example, about several tens to several hundreds of μm, and has a thickness that is half or less of the core layer 10. Since the core layer 10 has higher strength than the surface alloy layer 20, if the surface alloy layer 20 is thicker than the core layer 10, the surface alloy layer 20 is more easily stretched than the core layer during rolling. As a result, control of thickness, hardness, etc. becomes unstable. On the other hand, when the core layer 10 is thicker than the surface alloy layer 20, that is, when the thickness of the surface alloy layer 20 is less than half of the core layer 10, the thickness, hardness, etc. during rolling It becomes easy to control. Further, the (1, 0, 0) plane of the crystal grains is parallel to the surface of the alloy layer 20 by the heat treatment described later, and the <0, 0, 1> axis is oriented in a predetermined direction. Formed.

  When a base material is produced by rolling, heat treatment is performed to remove work hardening, so that the <0, 0, 1> axes of the crystal grains of the alloy layer are parallel to the rolling direction. Here, the size of the crystal grains after the heat treatment is preferably in the range of 10 to 80 μm. The texture of the alloy layer 20 on the surface is oriented by a driving force when strain generated during rolling is relaxed by heat treatment. Here, when the size of the crystal grains is uniform, the degree of orientation under a driving force increases. On the other hand, when the grain diameter is uneven and a large tilt grain boundary is included, the orientation direction of the crystal grains is not necessarily uniform even if there is a driving force, and the degree of orientation decreases.

By forming the surface alloy layer 20 as described above, it is possible to improve the degree of orientation and reduce the surface roughness. As a result, when an intermediate layer made of an oxide such as CeO ₂ , YSZ, Y ₂ O _3, etc. is formed on the alloy layer 20 on the surface, the epitaxial property is excellent, and a film can be formed at a high growth rate. In addition, the oxide superconductor layer formed thereon has excellent epitaxial properties and improved critical current characteristics.

  Hereinafter, the manufacturing method of the base material which concerns on the embodiment of this invention is demonstrated using drawing. FIG. 2 is a diagram for explaining a method for producing a substrate according to an embodiment of the present invention. In FIG. 2, the manufacturing method of the base material includes a rolling step S1 for forming a base material including the core layer 10 and the surface alloy layer 20 by rolling, and a heat treatment is performed on the base material obtained in the rolling step S1. And a heat treatment step S2 for orienting crystal grains in the alloy layer 20 on the surface.

  The rolling step S1 is a plate that becomes a core layer even in a step of rolling a member such as a billet obtained by enclosing a member that becomes a core layer 10 in a member that becomes an alloy layer 20 on the surface by using a billet extrusion method, for example. It may be a step of directly rolling a sheet member sandwiched between a plurality of plate-like members serving as alloy layers on the surface, or may be another step capable of realizing the above rolling step.

  Hereinafter, the step of forming the billet, the step of stacking plate-like members, and other steps performed before the rolling process are referred to as a material forming step, and are included in the rolling step. In the rolling step S1, a step of rolling the member obtained in the rolling step to a processing rate of 90% or more is performed. As a rolling method, for example, a roll rolling method may be used.

  The heat treatment performed in the heat treatment step S2 is, for example, maintained at a temperature of 900 to 1200 ° C. for 30 minutes to 10 hours in an atmosphere of a mixed gas of argon and hydrogen in which the proportion of hydrogen in the argon is 2 to 5 vol%. It is performed on the condition that. By this heat treatment, the crystal grains of the surface alloy layer 20 are oriented so that the (1,0,0) plane is parallel to the rolling surface and the <0,0,1> axis faces the rolling direction.

  Moreover, the size of the crystal grains in the surface alloy layer 20 can be controlled by this heat treatment, and the size of the crystal grains is, for example, in the range of 10 to 80 μm from the viewpoint of orientation. Is preferred. The size of the crystal grains in the surface alloy layer 20 can be controlled by adjusting the temperature and time of the heat treatment. In addition to heat treatment, the degree of workability during rolling, the composition of Ni, the type and composition of other additives, and the like can also be adjusted. Controlling the crystal grain size in this way can also contribute to securing mass productivity.

  By forming the base material in the steps described above, the strength of 0.2% elongation at room temperature can be made 500 MPa or more, and the saturation magnetization can be made 0.3 T or less. Therefore, it is possible to achieve processability suitable for mass production, cost reduction, and the like.

  In addition, although the base material 1 demonstrated the structure which has the surface alloy layer 20 on the core layer 10 above, as shown in FIG. 2, the base material 2 is the middle of the interface of the core layer 10 and the surface alloy layer 20. If the diffusion prevention layer 30 is provided on the surface, diffusion of an element, for example, W, from the core layer 10 to the surface alloy layer 20 can be prevented by the heat treatment at a temperature of 900 to 1200 ° C. in the heat treatment step S2. By providing the diffusion preventing layer 30, unintended diffusion of elements from the base material to the surface alloy layer 20 can be prevented, and the degree of orientation in the surface alloy layer 20 can be increased. Here, the diffusion preventing layer 30 can be formed using a heat-resistant metal material such as Ta or Nb.

(Example)
Hereinafter, the substrate of the present invention will be described more specifically with reference to examples. However, application of this invention is not limited to the Example shown below.
"Example 1"
In Example 1 of an example, a method of manufacturing a substrate using a billet extrusion method will be described. First, the composition is Ni-W3at. %, An outer diameter of 40 mm, an inner diameter of 25 mm, and a length of 50 mm (hereinafter referred to as an outer tube), the composition of which is Ni-W7 at. %, An outer diameter of φ24.8 mm and a length of 40 mm, a round bar is inserted, covered, and welded to form a billet. Here, as the lid, the composition is Ni-W3at. %, Using a member on a disk having an outer diameter of φ40 mm, the above-mentioned sealing is performed by electron beam welding.

  Here, the outer tube is a member that forms the surface alloy layer 20 and has a composition of Ni—W 0.5 at. % To Ni-W3at. % Range is preferred. In addition to W, elements such as V, Mo, Cr, Fe, and Cu may be added to Ni. Similarly, the above round bar is a member that will form the core layer 10 and has a composition of Ni—W3at. % To Ni-W7at. % Range is preferred. In addition to W, elements such as V, Mo, Cr, Fe, and Cu may be added to Ni. Specifically, the round bar may be formed using other alloys such as Ni-W 5%, Ni-Cr, Ni-V. This step corresponds to the rolling step described above.

  Next, the billet formed above is extruded with an extruder, and the one extruded from the extruder is roll-rolled to form, for example, a tape-like substrate having a thickness of 100 μm and a width of 10 mm. Here, the thickness of the surface alloy layer 20 is, for example, 10 μm. As a result, the processing rate becomes 90% or more. The above process corresponds to the rolling process.

  Next, the base material obtained in the rolling step is held for 3 hours in an atmosphere of a temperature of 1100 ° C., a mixed gas of argon and hydrogen, and the proportion of hydrogen in argon is 2 to 5% vol. By this heat treatment, the alloy layer 20 on the surface of the multilayer substrate, that is, Ni-W3at. The% layer is biaxially oriented. This process corresponds to a heat treatment process.

  FIG. 3A is an X-ray pole figure obtained for the alloy layer 20 on the surface of the base material obtained above. As shown in the X-ray pole figure shown in FIG. 3A, the degree of orientation P of the (1,0,0) plane of the crystal grains forming the alloy layer 20 on the surface of the substrate is about 99%. It was shown that the half width of φ scan peak (α = 34 °) indicating the sharpness of the biaxial orientation of the crystal, that is, Δφ was 6.2 °. Moreover, when the surface roughness Ra was evaluated using an atomic force microscope (hereinafter referred to as AFM), the surface roughness Ra in a 10 μm square region was 4.8 nm. The saturation magnetization at 77K was 0.22T.

  FIG. 3B is an X-ray pole figure obtained for a conventional biaxially oriented metal substrate. From the X-ray pole figure shown in FIG. 3B, the biaxially oriented metal substrate obtained by the conventional manufacturing method is biaxially oriented on the (1,0,0) plane of the crystal grains forming the surface alloy layer. The degree was 9.5 °, and the biaxial orientation degree could be improved by the present invention. Further, the surface roughness Ra of the biaxially oriented metal substrate obtained by the conventional manufacturing method was 4.5 nm, which was similar to that shown in Example 1 of this example.

  Moreover, when the tension test was done at room temperature, the 0.2% yield strength which is a stress when distortion becomes 0.2% was 700 MPa. Thereby, a base material having a high degree of orientation of 90% or more and a high substrate strength having a 0.2% proof stress at 900 MPa was obtained. In addition, the size of the crystal grain at this time was an average of 25 micrometers, and was in the range of 20-80 micrometers.

Next, a superconducting wire was prepared as follows using the tape-shaped substrate obtained by using the manufacturing method of Example 1 of the present invention. First, a film forming condition of a film forming temperature of 800 ° C., a vacuum degree of about 1 × 10 ⁻² Pa, and a film forming speed of 1 nm / s using an electron beam evaporation method over a 50 mm long region in a tape-like substrate. Thus, an intermediate layer made of CeO ₂ having a thickness of about 300 nm (hereinafter referred to as Ce oxide intermediate layer) was formed.

X-ray diffraction measurement was performed on the Ce oxide intermediate layer obtained above using the θ-2θ method. As a result, it was shown that the degree of orientation P was 97% from the intensity of two peaks from the ( _{2, 0} , 0) plane and the (1, 1, 1) plane of CeO2. In addition, the X-ray pole figure for the Ce oxide intermediate layer is as shown in FIG. 4, and this X-ray pole figure shows that the half-value width Δφ of the biaxial orientation degree is 5.2 °. . Further, when the surface roughness Ra was evaluated using AFM, the surface roughness Ra in a 10 μm square region was 8.5 nm.

Next, as a film formation condition, the film formation temperature was changed in the range of 500 to 900 ° C., and the same film formation and evaluation were performed. As a result, a high degree of biaxial orientation could be obtained. The same was true when the degree of vacuum was changed within the range of 5 × 10 ^{−4 to} 5 × 10 ⁻² Pa. Furthermore, the same was true when the deposition rate was changed in the range of 0.3 to 30 nm / s.

Next, a YSZ film having a thickness of 500 nm is formed on the Ce oxide intermediate layer formed above by using a pulse laser film forming method under a film forming temperature of 500 ° C. and a film forming condition of a vacuum degree of about 5 × 10 ⁻³ Pa. Formed. Further, a CeO ₂ layer having a thickness of about 300 nm was formed on the YSZ film in the same manner as described above by using an electron beam evaporation method. Next, using a pulse laser film forming method, so-called YBCO was deposited to a thickness of 500 nm under conditions of a film forming temperature of 700 ° C. to form a superconductor layer to obtain a superconducting material.

  Next, in order to evaluate the superconducting characteristics, a silver stabilizing layer having a thickness of about 1 μm was formed on the YBCO film formed as described above by using a high frequency sputtering method. Here, in order to measure the superconducting characteristics by the four-terminal method, four electrodes were formed along the longitudinal direction on the silver stabilizing layer. Next, lead wires were soldered to the above four electrodes, the two electrodes on the outer side in the longitudinal direction were used as current terminals, and the two electrodes on the inner side in the longitudinal direction were used as voltage terminals. The superconducting material electroded as described above was immersed in liquid nitrogen and the critical current was measured. The critical current was defined as a current value at which the electric field strength between the voltage terminals was 1 μV / cm. As a result, a critical current of 200 A was obtained in the absence of a magnetic field.

"Example 2"
Hereinafter, in Example 2 of an Example, the method to manufacture a base material using a direct rolling method is demonstrated. First, composition Ni-7 at. A plate material of W%, thickness 20 mm, width 100 mm, and length 1000 mm is made of Ni-3at. The sheet material is sandwiched between two sheet materials forming an alloy layer on the surface of% W, and each sheet material is pressed and pressed. The pressure welding is performed using a rolling mill, and the pressure welding is repeated until the thickness becomes 75 μm. Here, the thickness of the surface alloy layer is, for example, 15 μm.

  Here, the alloy layer on the surface has a composition of Ni-0.5 at. W% to Ni-3at. Those in the W% range are preferred. In addition to W, elements such as V, Mo, Cr, Fe, and Cu may be added to Ni. Similarly, the core layer has a composition of Ni-3 at. From W% to Ni-7 at. Those in the W% range are preferable, and elements such as V, Mo, Cr, Fe, and Cu other than W may be added to Ni. This process corresponds to a rolled material forming process.

  Next, in the heat treatment step, the base material obtained in the rolling material forming step is held for 3 hours in an atmosphere where the temperature is 1100 ° C., a mixed gas of argon and hydrogen, and the proportion of hydrogen in argon is 3 vol%. To do. By this heat treatment, the alloy layer 20 on the surface of the genus multilayer substrate, that is, Ni-W3at. The% layer is biaxially oriented. This process corresponds to a heat treatment process.

  Similar to Example 1 of the embodiment of the present invention, Ni—W3at. % Layer orientation degree P, biaxial orientation degree, etc. were evaluated. As a result, the orientation degree P of the (1, 0, 0) plane is 99%, the half width Δφ of the biaxial orientation degree is 6.2 °, and the surface roughness Ra of 10 μm square by AFM is 4.8 nm. there were. This is remarkably improved from the half-value width Δφ (9.5 °) of the biaxial orientation degree obtained for the alloy layer on the surface of the conventional biaxially oriented metal substrate based on FIG. 3B, and the surface roughness is It is about the same as the conventional one (4.5 nm). This indicates that the degree of crystal orientation is remarkably improved while maintaining the surface roughness substantially. The saturation magnetization at 77K was 0.27T.

  When a tensile test was performed at room temperature in the same manner as in Example 1 of the embodiment of the present invention, the 0.2% proof stress was 900 MPa. As a result, a base material having a high orientation degree of 90% or more and a substrate strength of 600 MPa with a high 0.2% proof stress was obtained. At this time, the average size of the crystal grains was 25 μm, and was in the range of 20-80 μm.

Next, a superconducting wire was prepared as follows using the tape-shaped substrate obtained by using the manufacturing method of Example 2 of the present invention. First, an electron beam evaporation method is used over a 50 mm longitudinal region of a tape-shaped substrate, under a film forming temperature of 800 ° C., a vacuum degree of about 1 × 10 ⁻² Pa, and a film forming speed of 1 nm / s. A Ce oxide intermediate layer having a thickness of about 300 nm was formed.
X-ray diffraction measurement was performed on the Ce oxide intermediate layer obtained above using the θ-2θ method. As a result, it was shown that the degree of orientation P was 97% based on the intensity of two peaks from the ( _{2, 0} , 0) plane and the (1, 1, 1) plane of CeO2. In addition, the X-ray pole figure for the Ce oxide intermediate layer is as shown in FIG. 4, and this X-ray pole figure shows that the half-value width Δφ of the biaxial orientation degree is 5.2 °. . Further, when the surface roughness Ra was evaluated using AFM, the surface roughness Ra in a 10 μm square region was 8.5 nm.

Next, as a film formation condition, the film formation temperature was changed in the range of 500 to 900 ° C., and the same film formation and evaluation were performed. As a result, a high degree of biaxial orientation could be obtained. The same was true when the degree of vacuum was changed within the range of 5 × 10 ^{−4 to} 5 × 10 ⁻² Pa. Furthermore, the same was true when the deposition rate was changed in the range of 0.3 to 30 nm / s.

Next, a YSZ film having a thickness of 500 nm is formed on the Ce oxide intermediate layer formed above by using a pulse laser film forming method under a film forming temperature of 500 ° C. and a film forming condition of a vacuum degree of about 5 × 10 ⁻³ Pa. Formed. Further, a CeO ₂ layer having a thickness of about 300 nm was formed on the YSZ film in the same manner as described above by using an electron beam evaporation method. Next, using a pulse laser film forming method, so-called YBCO was deposited to a thickness of 500 nm under conditions of a film forming temperature of 700 ° C. to form a superconductor layer to obtain a superconducting material.

  Next, in order to evaluate the superconducting characteristics, a silver electrode having a thickness of about 1 μm was formed on the YBCO film formed as described above by using a high frequency sputtering method. Formation of the silver electrode and connection of the lead wire to the silver electrode were performed in the same manner as described in Example 1 of the example of the present invention. The superconducting material electroded as described above was immersed in liquid nitrogen and the critical current was measured. The critical current is defined as a current value at which the electric field strength between the voltage terminals is 1 μV / cm, as described in Example 1 of the embodiment of the present invention. As a result, a critical current of 200 A was obtained in the absence of a magnetic field.

"Example 3"
In the method for producing a substrate using the billet extrusion method as in Example 1 of the present invention, the composition is Ni-5 at. % W, an outer diameter of φ40 mm, an inner diameter of φ25 mm, and a length of 50 mm (hereinafter referred to as an outer tube) having a composition of Ni-9 at. Insert a round bar with% W, outer diameter φ24.8 mm, length 40 mm, cover, and weld to form a billet. The subsequent steps are the same as in Example 1, and for example, a tape-shaped substrate having a thickness of 100 μm and a width of 10 mm is formed. The next heat treatment process is similar to the example, and a biaxially oriented metal multilayer substrate is produced.

    The degree of orientation P of the (1,0,0) plane of the crystal grains forming the alloy layer 20 on the surface of the base material is about 99%, the half-value width Δφ of the degree of biaxial orientation is 6.5 °, and the surface by AFM The roughness Ra was 4.9 nm. The saturation magnetization at 77K was 0.09T.

Moreover, when the tension test was done at room temperature, the 0.2% yield strength which is a stress when distortion becomes 0.2% was 900 MPa. Thereby, a base material having a high degree of orientation of 90% or more and a high substrate strength having a 0.2% proof stress of 900 MPa was obtained.
Table 1 summarizes the characteristics of the metal multilayer substrates according to Examples 1, 2, and 3.

  The base material and the base material manufacturing method according to the present invention can achieve both high strength and weak magnetism of the substrate, maintain a high degree of orientation of the oxide intermediate layer formed on the base material surface, and reduce costs. Has the effect of being capable of ensuring high mass productivity. Therefore, it is useful as a ceramic superconductor such as an oxide superconductor, a base material for a superconductor that requires other orientation control, a method for manufacturing the base material, and the like. A superconductor using the substrate according to the present invention can be manufactured.

FIG. 1 is a schematic view showing a cross-sectional structure of a substrate according to an embodiment of the present invention. FIG. 2 is a diagram for explaining a method for producing a substrate according to an embodiment of the present invention. 3 (a) and 3 (b) are X-ray pole figures obtained for the alloy layer on the surface of the base material of the present invention and a conventional biaxially oriented metal substrate, respectively. FIG. 4 is an X-ray pole figure obtained for the Ce oxide interlayer shown in the examples.

Explanation of symbols

1, 2 Base material 10 Core layer 20 Surface alloy layer 30 Diffusion prevention layer

Claims (14)

A core layer made of metal;
Ni formed on one or both surfaces of the core layer is 90 at. % Alloy layer containing at least
An alloy layer in which the {1, 0, 0} plane of crystal grains forming the alloy layer is parallel to the surface and the <0, 0, 1> axis of the crystal grains is oriented in a predetermined direction;
A base material for a superconductor, comprising:   The superconductor substrate has a tape shape, and the alloy layer has a {1,0,0} plane of crystal grains parallel to the tape plane and a <0,0,1> axis as a tape. The base material for a superconductor according to claim 1, wherein the base material is oriented in a longitudinal direction.   The core layer contains at least Ni, and one or more elements of W, Mo, Cr, V, Fe, and Cu are added in a total amount of 1 to 80 at. The substrate for superconductors according to claim 1, comprising:   The base material for a superconductor according to claim 1, wherein the core layer is made of a nonmagnetic metal material.   The alloy layer contains at least Ni, and any one or more elements of W, Mo, Cr, V, Fe, and Cu are added in a total amount of 0.5 to 10 at. The substrate for superconductors according to claim 1, comprising:   The base material for a superconductor according to claim 1, wherein the grain size of the crystal grains in the alloy layer is in a range of 10 to 80 µm.   The base material for a superconductor according to claim 1, wherein a total thickness of one or both of the alloy layers of the core layer is equal to or less than a thickness of the core layer.   The alloy layer and the core layer both contain W, and the W concentration of the alloy layer is 0.5 to 10 at. The base material for a superconductor according to claim 1, which is in a range of% and lower than the W concentration of the core layer.   The base material for a superconductor according to claim 1, further comprising a diffusion preventing layer for preventing element diffusion between the core layer and the alloy layer on the surface. A core layer made of the metal;
Ni formed on one or both surfaces of the core layer is 90 at. % Or more of the alloy layer, wherein the {1, 0, 0} plane of the crystal grains forming the alloy layer is parallel to the surface, and the <0, 0, 1> axis of the crystal grains is in a predetermined direction. An alloy layer oriented toward the
An intermediate layer made of an oxide formed on one or both surfaces of a superconductor substrate comprising:
A superconductor comprising an oxide superconductor layer further formed on the intermediate layer. A core layer made of metal, and 90 nm of Ni formed on one surface or both surfaces of the core layer. A rolling step for rolling a base material having a surface alloy layer composed of an alloy layer containing at least 90% of a processing rate of 90% or more;
The base material rolled in the rolling step is held for 30 minutes to 10 hours in an atmosphere of a mixed gas of argon and hydrogen at a temperature of 900 to 1200 ° C. and a ratio of hydrogen to argon of 2 to 5 vol %. A method for producing a substrate for a superconductor, comprising a heat treatment step. The method for producing a substrate for a superconductor according to claim 11, wherein the rolling step is a step of encapsulating a member to be the core layer in a member to be the alloy layer and rolling.   The superconductor according to claim 11, wherein the rolling step is a step of rolling by sandwiching a plate-like member serving as the core layer between a plurality of plate-like members serving as the surface alloy layers. A method for producing a substrate. A core layer made of metal, and 90 nm of Ni formed on one surface or both surfaces of the core layer. A rolling step for rolling a base material having a surface alloy layer composed of an alloy layer containing at least 90% of a processing rate of 90% or more;
The base material rolled in the rolling step is held for 30 minutes to 10 hours in an atmosphere of a mixed gas of argon and hydrogen at a temperature of 900 to 1200 ° C. and a ratio of hydrogen to argon of 2 to 5 vol %. A method of producing a superconductor, comprising: forming an intermediate layer made of an oxide on the surface of the alloy layer of the superconductor substrate manufactured by a heat treatment step, and further forming an oxide superconducting layer on the intermediate layer.