JP2007200829A - 有機発光トランジスタ - Google Patents

有機発光トランジスタ Download PDF

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Publication number
JP2007200829A
JP2007200829A JP2006077895A JP2006077895A JP2007200829A JP 2007200829 A JP2007200829 A JP 2007200829A JP 2006077895 A JP2006077895 A JP 2006077895A JP 2006077895 A JP2006077895 A JP 2006077895A JP 2007200829 A JP2007200829 A JP 2007200829A
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JP
Japan
Prior art keywords
semiconductor layer
organic light
emitting transistor
work function
electrode
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JP2006077895A
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English (en)
Japanese (ja)
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JP2007200829A5 (enrdf_load_stackoverflow
Inventor
Takahiro Ushikubo
孝洋 牛窪
Mare Sugisawa
希 杉澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006077895A priority Critical patent/JP2007200829A/ja
Publication of JP2007200829A publication Critical patent/JP2007200829A/ja
Publication of JP2007200829A5 publication Critical patent/JP2007200829A5/ja
Pending legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2006077895A 2005-12-27 2006-03-21 有機発光トランジスタ Pending JP2007200829A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006077895A JP2007200829A (ja) 2005-12-27 2006-03-21 有機発光トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005373796 2005-12-27
JP2006077895A JP2007200829A (ja) 2005-12-27 2006-03-21 有機発光トランジスタ

Publications (2)

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JP2007200829A true JP2007200829A (ja) 2007-08-09
JP2007200829A5 JP2007200829A5 (enrdf_load_stackoverflow) 2009-05-07

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JP2006077895A Pending JP2007200829A (ja) 2005-12-27 2006-03-21 有機発光トランジスタ

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JP (1) JP2007200829A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008141197A (ja) * 2006-11-29 2008-06-19 Xerox Corp 薄膜トランジスタ及び有機薄膜トランジスタ
JP2011504650A (ja) * 2007-10-18 2011-02-10 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 導電性調合物
JP2013084947A (ja) * 2011-09-28 2013-05-09 Fujifilm Corp 熱電変換材料及び熱電変換素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033185A (ja) * 2003-06-16 2005-02-03 Mitsubishi Chemicals Corp 電界効果トランジスタ
WO2005069400A1 (en) * 2004-01-16 2005-07-28 Cambridge University Technical Services Limited Ambipolar, light-emitting field-effect transistors
JP2005228968A (ja) * 2004-02-13 2005-08-25 Sharp Corp 電界効果型トランジスタ、これを用いた画像表示装置及び半導体装置
WO2005079119A1 (ja) * 2004-02-16 2005-08-25 Japan Science And Technology Agency 発光型トランジスタ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005033185A (ja) * 2003-06-16 2005-02-03 Mitsubishi Chemicals Corp 電界効果トランジスタ
WO2005069400A1 (en) * 2004-01-16 2005-07-28 Cambridge University Technical Services Limited Ambipolar, light-emitting field-effect transistors
JP2007523446A (ja) * 2004-01-16 2007-08-16 ケンブリッジ エンタープライズ リミティド 両極性発光電界効果トランジスタ
JP2005228968A (ja) * 2004-02-13 2005-08-25 Sharp Corp 電界効果型トランジスタ、これを用いた画像表示装置及び半導体装置
WO2005079119A1 (ja) * 2004-02-16 2005-08-25 Japan Science And Technology Agency 発光型トランジスタ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008141197A (ja) * 2006-11-29 2008-06-19 Xerox Corp 薄膜トランジスタ及び有機薄膜トランジスタ
JP2011504650A (ja) * 2007-10-18 2011-02-10 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 導電性調合物
US9673394B2 (en) 2007-10-18 2017-06-06 Merck Patent Gmbh Conducting formulation
JP2013084947A (ja) * 2011-09-28 2013-05-09 Fujifilm Corp 熱電変換材料及び熱電変換素子

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