JP2007194337A5 - - Google Patents

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Publication number
JP2007194337A5
JP2007194337A5 JP2006009882A JP2006009882A JP2007194337A5 JP 2007194337 A5 JP2007194337 A5 JP 2007194337A5 JP 2006009882 A JP2006009882 A JP 2006009882A JP 2006009882 A JP2006009882 A JP 2006009882A JP 2007194337 A5 JP2007194337 A5 JP 2007194337A5
Authority
JP
Japan
Prior art keywords
semiconductor substrate
epitaxial film
main surface
transistor
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006009882A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007194337A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006009882A priority Critical patent/JP2007194337A/ja
Priority claimed from JP2006009882A external-priority patent/JP2007194337A/ja
Publication of JP2007194337A publication Critical patent/JP2007194337A/ja
Publication of JP2007194337A5 publication Critical patent/JP2007194337A5/ja
Pending legal-status Critical Current

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JP2006009882A 2006-01-18 2006-01-18 半導体装置およびその製造方法 Pending JP2007194337A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006009882A JP2007194337A (ja) 2006-01-18 2006-01-18 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006009882A JP2007194337A (ja) 2006-01-18 2006-01-18 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2007194337A JP2007194337A (ja) 2007-08-02
JP2007194337A5 true JP2007194337A5 (enrdf_load_stackoverflow) 2008-12-04

Family

ID=38449800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006009882A Pending JP2007194337A (ja) 2006-01-18 2006-01-18 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2007194337A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157040A1 (ja) 2008-06-25 2009-12-30 富士通マイクロエレクトロニクス株式会社 半導体装置及びその製造方法
JP4875115B2 (ja) * 2009-03-05 2012-02-15 株式会社東芝 半導体素子及び半導体装置
JP6019599B2 (ja) 2011-03-31 2016-11-02 ソニー株式会社 半導体装置、および、その製造方法
US9299560B2 (en) * 2012-01-13 2016-03-29 Applied Materials, Inc. Methods for depositing group III-V layers on substrates

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359293A (ja) * 2001-05-31 2002-12-13 Toshiba Corp 半導体装置
US7385247B2 (en) * 2004-01-17 2008-06-10 Samsung Electronics Co., Ltd. At least penta-sided-channel type of FinFET transistor

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