JP2007194337A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007194337A5 JP2007194337A5 JP2006009882A JP2006009882A JP2007194337A5 JP 2007194337 A5 JP2007194337 A5 JP 2007194337A5 JP 2006009882 A JP2006009882 A JP 2006009882A JP 2006009882 A JP2006009882 A JP 2006009882A JP 2007194337 A5 JP2007194337 A5 JP 2007194337A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- epitaxial film
- main surface
- transistor
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 62
- 239000000758 substrate Substances 0.000 claims 42
- 230000015572 biosynthetic process Effects 0.000 claims 34
- 238000005755 formation reaction Methods 0.000 claims 34
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000000969 carrier Substances 0.000 claims 8
- 230000000875 corresponding Effects 0.000 claims 3
- 230000002093 peripheral Effects 0.000 claims 3
- 238000000034 method Methods 0.000 claims 1
Claims (19)
半導体基板と、
前記トランジスタにおいて前記半導体基板の主面よりもキャリア移動度が大きいファセット面が含まれるように、前記半導体基板の主面に成膜されているエピタキシャル成膜層と
を有し、
前記トランジスタは、前記エピタキシャル成膜層において前記半導体基板の主面よりもキャリア移動度が大きいファセット面を含む領域がチャネル領域として形成されている
半導体装置。 A semiconductor device provided with a transistor,
A semiconductor substrate;
An epitaxial film-forming layer formed on the main surface of the semiconductor substrate so that the transistor includes a facet surface having a carrier mobility larger than that of the main surface of the semiconductor substrate;
In the transistor, a region including a facet surface having a carrier mobility larger than a main surface of the semiconductor substrate in the epitaxial film formation layer is formed as a channel region.
前記エピタキシャル成膜層は、前記キャリア移動度として正孔移動度が前記半導体基板の主面よりも大きなファセット面が形成されており、
前記ｐ型トランジスタは、前記エピタキシャル成膜層において前記半導体基板の主面よりも正孔移動度が大きいファセット面を含む領域が、チャネル領域として形成されている
請求項１に記載の半導体装置。 A p-type transistor is formed as the transistor;
In the epitaxial film formation layer, a facet surface having a hole mobility larger than the main surface of the semiconductor substrate is formed as the carrier mobility,
The semiconductor device according to claim 1, wherein in the p-type transistor, a region including a facet surface having a hole mobility larger than a main surface of the semiconductor substrate in the epitaxial film formation layer is formed as a channel region.
前記ｎ型トランジスタは、前記半導体基板の主面に対応する領域がチャネル領域として形成されている
請求項２に記載の半導体装置。 An n-type transistor is formed as the transistor,
The semiconductor device according to claim 2, wherein in the n-type transistor, a region corresponding to a main surface of the semiconductor substrate is formed as a channel region.
前記エピタキシャル成膜層は、前記半導体基板の（１００）面よりも正孔移動度が大きい（１１１）面が、前記ファセット面として形成されており、
前記ｐ型トランジスタは、前記エピタキシャル成膜層の前記（１１１）面を含むように、チャネル領域が形成されている
請求項３に記載の半導体装置。 In the semiconductor substrate, the main surface is a (100) surface,
In the epitaxial film formation layer, a (111) surface having a hole mobility larger than the (100) surface of the semiconductor substrate is formed as the facet surface,
The semiconductor device according to claim 3, wherein in the p-type transistor, a channel region is formed so as to include the (111) plane of the epitaxial film formation layer.
前記エピタキシャル成膜層は、前記半導体基板の（１００）面よりも正孔移動度が大きい（３１１）面が、前記ファセット面として形成されており、
前記ｐ型トランジスタは、前記エピタキシャル成膜層の前記（３１１）面を含むように、チャネル領域が形成されている
請求項３に記載の半導体装置。 In the semiconductor substrate, the main surface is a (100) surface,
In the epitaxial film formation layer, a (311) surface having a hole mobility larger than the (100) surface of the semiconductor substrate is formed as the facet surface,
The semiconductor device according to claim 3, wherein the p-type transistor includes a channel region so as to include the (311) plane of the epitaxial film formation layer.
前記エピタキシャル成膜層は、前記半導体基板の（１００）面よりも正孔移動度が大きい（１１０）面が、前記ファセット面として形成されており、
前記ｐ型トランジスタは、前記エピタキシャル成膜層の前記（１１０）面を含むように、チャネル領域が形成されている
請求項３に記載の半導体装置。 In the semiconductor substrate, the main surface is a (100) surface,
In the epitaxial film formation layer, a (110) surface having a hole mobility larger than the (100) surface of the semiconductor substrate is formed as the facet surface,
The semiconductor device according to claim 3, wherein the p-type transistor has a channel region formed so as to include the (110) plane of the epitaxial film formation layer.
前記エピタキシャル成膜層は、前記キャリア移動度として電子移動度が前記半導体基板の主面よりも大きな面が前記ファセット面として形成されており、
前記ｎ型トランジスタは、前記エピタキシャル成膜層において前記半導体基板の主面よりも電子移動度が大きな前記ファセット面を含む領域が、チャネル領域として形成されている
請求項１に記載の半導体装置。 An n-type transistor is formed as the transistor,
In the epitaxial film formation layer, a surface having electron mobility larger than the main surface of the semiconductor substrate as the carrier mobility is formed as the facet surface,
2. The semiconductor device according to claim 1, wherein in the n-type transistor, a region including the facet surface having a higher electron mobility than a main surface of the semiconductor substrate in the epitaxial film formation layer is formed as a channel region.
前記ｐ型トランジスタは、前記半導体基板の主面に対応する領域がチャネル領域として形成されている
請求項７に記載の半導体装置。 A p-type transistor is formed as the transistor;
The semiconductor device according to claim 7, wherein in the p-type transistor, a region corresponding to a main surface of the semiconductor substrate is formed as a channel region.
前記エピタキシャル成膜層は、前記半導体基板の（１１０）面よりも電子移動度が大きい（１００）面が、前記ファセット面として形成されており、
前記ｎ型トランジスタは、前記エピタキシャル成膜層の前記（１００）面を含むように、チャネル領域が形成されている
請求項８に記載の半導体装置。 In the semiconductor substrate, the main surface is a (110) surface,
In the epitaxial film formation layer, a (100) surface having a higher electron mobility than the (110) surface of the semiconductor substrate is formed as the facet surface,
The semiconductor device according to claim 8, wherein the n-type transistor has a channel region formed so as to include the (100) plane of the epitaxial film formation layer.
前記トランジスタ形成工程にて形成される前記トランジスタにおいて前記半導体基板の主面よりもキャリア移動度が大きいファセット面が含まれるように、前記半導体基板の主面にエピタキシャル成膜層を成膜するエピタキシャル成膜層形成工程
を有し、
前記トランジスタ形成工程においては、前記エピタキシャル成膜層形成工程によって形成された前記エピタキシャル成膜層において前記半導体基板の主面よりもキャリア移動度が大きいファセット面を含む領域がチャネル領域になるように前記トランジスタを形成する
半導体装置の製造方法。 A method of manufacturing a semiconductor device including a transistor forming step of providing a transistor on a main surface of a semiconductor substrate,
Epitaxial film-forming layer for forming an epitaxial film-forming layer on the main surface of the semiconductor substrate so that the transistor formed in the transistor forming step includes a facet surface having a carrier mobility larger than that of the main surface of the semiconductor substrate Forming process,
In the transistor formation step, the transistor is formed so that a region including a facet surface having a carrier mobility larger than a main surface of the semiconductor substrate in the epitaxial film formation layer formed in the epitaxial film formation step is a channel region. A method for manufacturing a semiconductor device.
前記トランジスタ形成工程においては、前記エピタキシャル成膜層において前記半導体基板の主面よりも正孔移動度が大きいファセット面を含む領域をチャネル領域とするｐ型トランジスタを前記トランジスタとして形成する
請求項１０に記載の半導体装置の製造方法。 In the epitaxial film-forming layer forming step, the epitaxial film-forming layer is formed so that a hole mobility is larger than the main surface of the semiconductor substrate as the carrier mobility,
11. The p-type transistor having a region including a facet surface having a hole mobility larger than a main surface of the semiconductor substrate in the epitaxial film formation layer as a channel region is formed as the transistor in the transistor formation step. Semiconductor device manufacturing method.
請求項１１に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 11, wherein in the transistor formation step, an n-type transistor having a region corresponding to a main surface of the semiconductor substrate as a channel region is formed as the transistor.
前記トランジスタ形成工程においては、前記エピタキシャル成膜層の前記（１１１）面をチャネル領域が含むように前記ｐ型トランジスタを形成する
請求項１２に記載の半導体装置の製造方法。 In the epitaxial film-forming layer forming step, a (111) surface having a hole mobility larger than the (100) surface of the semiconductor substrate is formed as the facet surface on the semiconductor substrate whose main surface is the (100) surface. Forming the epitaxial film formation layer as described above,
The method of manufacturing a semiconductor device according to claim 12, wherein in the transistor formation step, the p-type transistor is formed so that a channel region includes the (111) plane of the epitaxial film formation layer.
請求項１３に記載の半導体装置の製造方法。 In the epitaxial film forming step, the main surface of the semiconductor substrate is perpendicular to the first <110> direction and is along a second <110> direction different from the first <110> direction. By forming a mask layer on the main surface of the semiconductor substrate so as to extend, and then performing epitaxial growth in a peripheral region where the mask layer is formed on the main surface of the semiconductor substrate, a (111) plane The method for manufacturing a semiconductor device according to claim 13, wherein the epitaxial film-forming layer is formed so as to include a facet surface.
前記トランジスタ形成工程においては、前記エピタキシャル成膜層の前記（３１１）面をチャネル領域が含むように前記ｐ型トランジスタを形成する
請求項１２に記載の半導体装置の製造方法。 In the epitaxial film formation layer forming step, a (311) surface having a hole mobility larger than the (100) surface of the semiconductor substrate is formed as the facet surface on the semiconductor substrate having the main surface of the (100) surface. Forming the epitaxial film formation layer,
The method for manufacturing a semiconductor device according to claim 12, wherein in the transistor formation step, the p-type transistor is formed so that a channel region includes the (311) plane of the epitaxial film formation layer.
請求項１５に記載の半導体装置の製造方法。 In the epitaxial film formation layer forming step, along the second <110> direction that is perpendicular to the first <110> direction on the main surface of the semiconductor substrate and is different from the first <110> direction. (311) by forming a mask layer on the main surface of the semiconductor substrate so as to extend and then performing epitaxial growth in a peripheral region where the mask layer is formed on the main surface of the semiconductor substrate. The method for manufacturing a semiconductor device according to claim 15, wherein the epitaxial film-forming layer is formed so as to include a surface as a facet surface.
前記トランジスタ形成工程においては、前記エピタキシャル成膜層の前記（１１０）面をチャネル領域が含むように前記ｐ型トランジスタを形成する
請求項１２に記載の半導体装置の製造方法。 In the epitaxial film formation layer forming step, a (110) surface having a hole mobility larger than the (100) surface of the semiconductor substrate is formed as the facet surface on the semiconductor substrate having the main surface of the (100) surface. Forming the epitaxial film formation layer,
The method of manufacturing a semiconductor device according to claim 12, wherein in the transistor formation step, the p-type transistor is formed so that a channel region includes the (110) plane of the epitaxial film formation layer.
請求項１５に記載の半導体装置の製造方法。 In the epitaxial film formation layer forming step, a mask layer is formed on the main surface of the semiconductor substrate so as to be perpendicular to the <100> direction and to extend along the <100> direction on the main surface of the semiconductor substrate. The semiconductor film according to claim 15, wherein an epitaxial film-forming layer including the (110) plane as a facet surface is formed by performing epitaxial growth in a peripheral region where the mask layer is formed on the main surface of the semiconductor substrate. Device manufacturing method.
前記トランジスタ形成工程においては、前記エピタキシャル成膜層において前記半導体基板の主面よりも電子移動度が大きいファセット面を含む領域をチャネル領域とするｎ型トランジスタを前記トランジスタとして形成する
請求項１０に記載の半導体装置の製造方法。 In the epitaxial film-forming layer forming step, the epitaxial film-forming layer is formed so that the carrier mobility includes a facet surface whose electron mobility is larger than the main surface of the semiconductor substrate,
The n-type transistor having a region including a facet surface having a higher electron mobility than a main surface of the semiconductor substrate in the epitaxial film formation layer as the channel region is formed as the transistor in the transistor formation step. A method for manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006009882A JP2007194337A (en) | 2006-01-18 | 2006-01-18 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006009882A JP2007194337A (en) | 2006-01-18 | 2006-01-18 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007194337A JP2007194337A (en) | 2007-08-02 |
| JP2007194337A5 true JP2007194337A5 (en) | 2008-12-04 |
Family
ID=38449800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006009882A Pending JP2007194337A (en) | 2006-01-18 | 2006-01-18 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007194337A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009157040A1 (en) * | 2008-06-25 | 2009-12-30 | 富士通マイクロエレクトロニクス株式会社 | Semiconductor device and process for producing the semiconductor device |
| JP4875115B2 (en) | 2009-03-05 | 2012-02-15 | 株式会社東芝 | Semiconductor element and semiconductor device |
| JP6019599B2 (en) | 2011-03-31 | 2016-11-02 | ソニー株式会社 | Semiconductor device and manufacturing method thereof |
| US9299560B2 (en) * | 2012-01-13 | 2016-03-29 | Applied Materials, Inc. | Methods for depositing group III-V layers on substrates |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002359293A (en) * | 2001-05-31 | 2002-12-13 | Toshiba Corp | Semiconductor device |
| US7385247B2 (en) * | 2004-01-17 | 2008-06-10 | Samsung Electronics Co., Ltd. | At least penta-sided-channel type of FinFET transistor |
-
2006
- 2006-01-18 JP JP2006009882A patent/JP2007194337A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9196483B1 (en) | Carrier channel with element concentration gradient distribution and fabrication method thereof | |
| JP2009514247A5 (en) | ||
| US10658175B2 (en) | Semiconductor device and manufacturing method therefor | |
| TW200746430A (en) | Method of manufacturing semiconductor device, and semiconductor device | |
| US9583392B2 (en) | Carbon layer and method of manufacture | |
| JP2007528593A5 (en) | ||
| JP2009060096A5 (en) | ||
| TW200729343A (en) | Method for fabricating controlled stress silicon nitride films | |
| JP2006210555A5 (en) | ||
| JP2008520097A5 (en) | ||
| JP2007501526A5 (en) | ||
| JP2012164986A5 (en) | ||
| JP2012516036A5 (en) | ||
| JP2011040445A5 (en) | ||
| JP2009071288A5 (en) | ||
| WO2006016914A3 (en) | Methods for nanowire growth | |
| JP2008519434A5 (en) | ||
| JP2006332606A5 (en) | ||
| JP6525554B2 (en) | CMOS device including substrate structure | |
| JP2007194337A5 (en) | ||
| US9831251B2 (en) | Method of fabricating semiconductor device and semiconductor device fabricated thereby | |
| JP2006332603A5 (en) | ||
| WO2008084519A1 (en) | Method for manufacturing silicon epitaxial wafer | |
| WO2017067157A1 (en) | Method of manufacturing improving quality of sige source/drain region | |
| JP2009520364A5 (en) |