JP2007193191A - Flat display device and method of driving the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a flat display device reduced in luminance variation caused by deviation of an electron orbit, and to provide a method of driving the same. <P>SOLUTION: The method of driving the flat display device is provided, wherein the flat display device employs a line-sequential driving method in which a first electrode 13 is sequentially selected as a scanning electrode. The method is characterized in that when voltages applied to a selection first electrode, an adjacent first electrode and the other first electrode are V<SB>R_SEL'</SB>, V<SB>R_PRE'</SB>and V<SB>R_OTH'</SB>respectively, a potential difference required for the electron to collide against a predetermined position of a fluorescent region is ΔV<SB>R_NOR'</SB>and a potential to be applied between the selection first electrode and an n-th second electrode 11 is ΔV<SB>CI_n</SB>, and when the electron collides against a part of fluorescent region apart from the adjacent first electrode based on the predetermined position, voltage V<SB>R_SEL</SB>and voltage V<SB>R_PRE</SB>are applied to the selection first electrode and the adjacent first electrode, respectively so that V<SB>R_SEL</SB>-V<SB>R_PRE</SB><ΔV<SB>R_NOR</SB>is satisfied, and in that when the electron collides against a part of the fluorescent region near the adjacent first electrode, the voltage V<SB>R_SEL</SB>and V<SB>R_PRE</SB>are applied to the selection first electrode and the adjacent first electrode, respectively and voltage V<SB>R_SEL</SB>-ΔV<SB>CI_n</SB>is applied to the n-th second electrode so that V<SB>R_SEL</SB>-V<SB>R_PRE</SB>>ΔV<SB>R_NOR</SB>is satisfied. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a line-sequential drive type flat panel display and a driving method of the flat panel display.

  As an image display device that replaces a cathode ray tube (CRT), various types of flat panel display devices have been studied. Examples of such a flat display device include a liquid crystal display device (LCD), an electroluminescence display device (ELD), and a plasma display device (PDP). Development of a flat display device incorporating an electron-emitting device is also underway. Here, as the electron-emitting device, a cold cathode field electron-emitting device, a metal / insulating film / metal-type device (also called MIM device), and a surface conduction electron-emitting device are known. The flat display device incorporating the electron-emitting device is attracting attention from the viewpoint of high resolution, high luminance color display, and low power consumption.

  In general, a cold cathode field emission display device (hereinafter sometimes abbreviated as a display device), which is a flat display device incorporating a cold cathode field emission device, has a sub-pixel arranged in a two-dimensional matrix. A cathode panel having a corresponding electron emission region and an anode panel having a phosphor region that emits light when excited by collision with electrons emitted from the electron emission region are arranged to face each other through a space held in a vacuum. Have a configuration. The electron emission region is usually provided with one or a plurality of cold cathode field emission devices (hereinafter sometimes abbreviated as field emission devices). Examples of field emission devices include Spindt type, flat type, edge type, and planar type.

  As an example, FIG. 18 is a conceptual partial end view of a display device having a Spindt-type field emission device, and a schematic view of a part of the cathode panel CP and the anode panel AP when the cathode panel CP and the anode panel AP are disassembled. A simple exploded perspective view is shown in FIG. The cathode panel CP constituting this display device includes a strip-shaped trunk electrode 13A extending in a first direction (X direction in FIGS. 18 to 19) and a branch electrode 13B extending from one side of the trunk electrode 13A. M gate electrodes 13 (corresponding to first electrodes) and N-shaped cathode electrodes 11 (first electrodes) extending in a second direction (Y direction in FIGS. 18 to 19) different from the first direction. Corresponding to two electrodes). An electron emission region EA that constitutes one subpixel is formed in an overlapping region between the branch electrode 13B that constitutes the gate electrode 13 and the cathode electrode 11. The Spindt-type field emission device constituting this display device was formed on the cathode 10 formed on the support 10, the insulating layer 12 formed on the support 10 and the cathode 11, and the insulating layer 12. The gate electrode 13 (the trunk electrode 13A and the branch electrode 13B) and the opening 14 provided in the gate electrode 13 and the insulating layer 12 (the first opening 14A provided in the gate electrode 13 and the insulating layer 12 The second opening 14B) and a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14. In FIG. 19, the insulating layer 12 is shown transparently for convenience.

  In general, the cathode electrode 11 and the gate electrode 13 are formed in directions in which the projected images of both the electrodes 11 and 13 are orthogonal to each other. For convenience, FIG. 18 shows one electron emission portion 15 for each electron emission area EA. The same applies to other drawings to be described later. The electron emission areas EA are usually arranged in a two-dimensional matrix within the effective area of the cathode panel CP (area corresponding to the display area of the display device). The electron emission region EA is disposed between the trunk electrode 13A constituting the gate electrode 13 and the trunk electrode 13A constituting the adjacent gate electrode 13. For example, Japanese Patent Laid-Open No. 8-180821 discloses a flat display device in which an electron source is disposed between a trunk electrode and the trunk electrode.

  On the other hand, the anode panel AP has phosphor regions 22 having a predetermined pattern on the substrate 20 (specifically, a red light-emitting phosphor region 22R, a green light-emitting phosphor region 22G, and a blue light-emitting phosphor region 22B). The phosphor region 22 is formed and covered with the anode electrode 24. In addition, a space between these phosphor regions 22 is embedded with a light absorbing layer (black matrix) 23 made of a light absorbing material such as carbon to prevent the occurrence of color turbidity and optical crosstalk in the display image. ing. In the figure, reference numeral 21 represents a partition, reference numeral 40 represents, for example, a plate-shaped spacer, reference numeral 25 represents a spacer holding portion, and reference numeral 26 represents a joining member. In FIG. 19, the illustration of the partition walls, spacers, and spacer holding portions is omitted.

  The anode electrode 24 has a function of preventing charging of the phosphor region 22 in addition to a function as a reflection film that reflects light emitted from the phosphor region 22. In addition, the barrier rib 21 is configured such that electrons recoiled from the phosphor region 22 or secondary electrons emitted from the phosphor region 22 (hereinafter, these electrons are collectively referred to as backscattered electrons) and other fluorescence. It has a function of preventing so-called optical crosstalk (color turbidity) from colliding with the body region 22.

  One subpixel is composed of an electron emission area EA on the cathode panel side and a phosphor area 22 on the anode panel side facing a group of these field emission elements. In the case of a color display device, one pixel (one pixel) is composed of a set of one red-emitting phosphor region, one green-emitting phosphor region, and one blue-emitting phosphor region. . In the effective area, such pixels are arranged on the order of hundreds of thousands to millions, for example.

Then, the anode panel AP and the cathode panel CP are arranged so that the electron emission region EA and the phosphor region 22 are opposed to each other, joined at the peripheral portion via the joining member 26, and then exhausted and sealed. Thus, a display device can be manufactured. A space surrounded by the anode panel AP, the cathode panel CP, and the bonding member 26 is in a high vacuum (for example, 1 × 10 ⁻³ Pa or less).

  In such a display device, since the space surrounded by the anode panel AP, the cathode panel CP, and the bonding member 26 is in a high vacuum, for example, a plate-like shape is provided between the anode panel AP and the cathode panel CP. If the spacer 40 is not arranged, the display device is damaged by the atmospheric pressure. In the display device shown in FIG. 18, the plate-like spacer 40 is arranged on the gate electrode 13 (more specifically, the trunk electrode 13A).

  A relatively negative voltage is applied to the cathode electrode 11 from the cathode electrode control circuit 31, a relatively positive voltage is applied to the gate electrode 13 from the gate electrode control circuit 32, and the anode electrode 24 is applied to the anode electrode 24 more than the gate electrode 13. Further, a higher positive voltage is applied from the anode electrode control circuit 33. When displaying an image by the line sequential driving method in such a display device, a video signal is input from the cathode electrode control circuit 31 to the cathode electrode 11, and a scanning signal is input from the gate electrode control circuit 32 to the gate electrode 13. An electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13 causes an electron to be emitted from the electron emission portion 15 based on the quantum tunnel effect, and this electron is attracted to the anode electrode 24, It passes through and collides with the phosphor region 22. As a result, the phosphor region 22 is excited to emit light, and a desired image can be obtained. That is, the operation of the cold cathode field emission display is basically controlled by the voltage applied to the gate electrode 13 and the voltage applied to the cathode electrode 11.

  The spacer 40 is made of a rigid material such as ceramic. Both ends of the spacer 40 are in contact with the anode electrode 24 and the gate electrode 13, respectively. Therefore, the spacer 40 basically needs to have a high resistance so that an excessive current does not flow through the spacer 40.

The trajectory of electrons emitted from the electron emission area EA will be described with reference to FIG. FIG. 20 schematically shows the details of the electron trajectory when the gate electrode 13 _m is selected. As shown in FIG. 20, when the gate electrode 13 _m is selected, the voltage V _{R_on} (for example, 35 volts) is applied to the gate electrode 13 _m , and the voltage V _{R_off} ( For example, 0 volts) is applied. Therefore, the electron emission region EA corresponding to the selected gate electrodes 13 _m, a gate electrode 13 _m-1 the voltage V _{R_off} applied adjacent. By an electric field formed between the selected gate electrodes 13 _m and the gate electrode 13 _m-1 the adjacent electron trajectories TR _m emitted from the electron-emitting region EA is left (-Y direction in FIG. 20 ). Therefore, the collision position between the electrons emitted from the electron emission region EA and the phosphor region 22 changes by a distance YD in the −Y direction as compared with the case where it is assumed that there is no such deflection. Basically, the distance YD is determined by design according to the specifications of the display device (for example, the distance between the gate electrodes 13 and the setting of the voltage applied to the gate electrode 13). Therefore, for example, when the distance YD cannot be ignored with respect to the width of the phosphor region 22 in the Y direction, the cathode panel CP and the anode panel AP may be aligned in view of the distance YD. Thus, by design, the display device can be assembled so that electrons emitted from the electron emission area EA collide with a predetermined position of the phosphor area 22 (for example, the geometric center of the phosphor area 22). That's fine. In this case, the gate electrode adjacent to the selected gate electrode 13 required for deflecting a predetermined amount of electrons emitted from the electron emission region EA and causing the electrons to collide with a predetermined position of the phosphor region 22. The potential difference between the first and second terminals is V _{R_on} −V _{R_off} (for example, 35 volts−0 volts = 35 volts). FIG. 20 shows that the cathode panel CP and the anode panel AP are aligned in view of the distance YD.

Japanese Patent Laid-Open No. 8-180821

  Basically, the distance YD is determined by design according to the specifications of the display device. However, in reality, the electron trajectory varies due to various factors, and the distance YD also changes accordingly. For example, in a display device, it is inevitable that a certain amount of variation occurs in the distance between the gate electrodes. Since the electron trajectory also changes depending on the distance between the gate electrodes, depending on the degree of variation, a luminance change due to a change in the electron collision position is observed in the phosphor region corresponding to the specific gate electrode. Further, when the spacer is charged, the trajectory of electrons near the spacer is affected. For example, as shown in FIG. 21, when the spacer 40 is positively charged, electrons near the spacer are attracted to the spacer 40 side, so that the distance YD changes. Depending on the degree of charging of the spacer, a luminance change due to a change in the collision position of electrons is observed in the phosphor region along the spacer. These luminance changes degrade the quality of the image displayed on the display device.

  Accordingly, an object of the present invention is to provide a flat panel display device and a driving method for the flat panel display device, which can reduce a change in luminance caused by a shift in the trajectory of electrons emitted from the electron emission region. .

In order to achieve the above object, the driving method of the flat display device of the present invention is
(A) M first electrodes each consisting of a stem electrode extending in a first direction, a branch electrode extending from one side of the stem electrode, and N extending in a second direction different from the first direction A cathode panel comprising a second electrode of the book, an electron emission region formed in an overlapping region between the branch electrode and the second electrode constituting the first electrode, and
(B) an anode panel comprising a phosphor region and an anode electrode;
A driving method of a flat-type display device of a line sequential driving method in which the first electrode is sequentially selected as a scanning electrode,
(A) The voltage applied to the selected first selected electrode is V _{R_SEL} ,
(B) The voltage applied to the adjacent first electrode adjacent to the branch electrode constituting the selected first electrode is V _{R_PRE} ,
(C) The voltage applied to the other first electrode is V _{R_OTH} ,
(D) Deflection of electrons emitted from the electron emission region by a predetermined amount by an electric field formed between the selected first electrode and the adjacent first electrode so that the electrons collide with a predetermined position in the phosphor region. ΔV _{R_NOR} , the _required potential difference between the selected first electrode and the adjacent first electrode,
(E) Depending on the image to be displayed, the potential difference to be applied between the selected first electrode and the nth second electrode is ΔV _{CI —} n (where n = 1, 2,... N),
And when
When electrons collide with a portion of the phosphor region away from the adjacent first electrode with respect to the predetermined position, the voltage V _{R_SEL} is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} <ΔV _{R_NOR} is satisfied. V _{R_PRE} is applied to the adjacent first electrode,
When electrons collide with a portion of the phosphor region close to the adjacent first electrode with reference to the predetermined position, the voltage V _{R_SEL} is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} > ΔV _{R_NOR} is satisfied. A voltage V _{R_PRE} is applied to the adjacent first electrode,
A voltage having a value of V _{R — SEL} −ΔV _{CI —} n is applied to the n th second electrode.

In order to achieve the above object, the flat display device of the present invention is
(A) M first electrodes each consisting of a stem electrode extending in a first direction, a branch electrode extending from one side of the stem electrode, and N extending in a second direction different from the first direction A cathode panel comprising a second electrode of the book, an electron emission region formed in an overlapping region between the branch electrode and the second electrode constituting the first electrode, and
(B) an anode panel comprising a phosphor region and an anode electrode;
A line-sequential drive type flat display device in which the first electrode is sequentially selected as a scanning electrode,
(A) The voltage applied to the selected first selected electrode is V _{R_SEL} ,
(B) The voltage applied to the adjacent first electrode adjacent to the branch electrode constituting the selected first electrode is _expressed as V _{R_PRE} ,
(C) The voltage applied to the other first electrode is V _{R_OTH} ,
(D) Deflection of electrons emitted from the electron emission region by a predetermined amount by an electric field formed between the selected first electrode and the adjacent first electrode so that the electrons collide with a predetermined position in the phosphor region. ΔV _{R_NOR} , the _required potential difference between the selected first electrode and the adjacent first electrode,
(E) Depending on the image to be displayed, the potential difference to be given between the selected first electrode and the nth second electrode is _expressed as ΔV _{CI —} n (where n = 1, 2,... N),
And when
When electrons collide with a portion of the phosphor region away from the adjacent first electrode with respect to the predetermined position, the voltage V _{R_SEL} is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} <ΔV _{R_NOR} is satisfied. V _{R_PRE} is applied to the adjacent first electrode,
When electrons collide with a portion of the phosphor region close to the adjacent first electrode with reference to the predetermined position, the voltage V _{R_SEL} is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} > ΔV _{R_NOR} is satisfied. The voltage V _{R_PRE} is applied to the adjacent first electrode,
A voltage having a value of V _{R — SEL} −ΔV _{CI —} n is applied to the n th second electrode.

In the flat display device or the driving method of the flat display device of the present invention (hereinafter, these may be collectively referred to simply as the present invention), the “predetermined position” refers to the operating condition intended for the design. Means the position where electrons should collide with the phosphor region when the flat display device is operated. For example, the geometric center of the phosphor region can be set to the “predetermined position”, but is not limited thereto. The potential difference ΔV _{R_NOR} means a constant potential difference determined by design for the flat display device. In the present invention, when an electron collides with a portion of the phosphor region that is distant from the adjacent first electrode with reference to a predetermined position, the first electrode selected so as to satisfy V _{R_SEL} −V _{R_PRE} <ΔV _{R_NOR} voltage V _{R_SEL,} the application of a voltage V _{R_PRE} to the adjacent first electrode. In addition, when electrons collide with a portion of the phosphor region close to the adjacent first electrode with a predetermined position as a reference, the voltage V is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} > ΔV _{R_NOR} is satisfied. _The voltage V _{R_PRE} is applied to _{R_SEL} and the adjacent first electrode. In addition, the aspect which adjusts both the value of voltage V _{R_SEL} and voltage V _{R_PRE} may be sufficient, and the aspect which adjusts any one value may be sufficient. Thereby, the electric field formed between the selected first electrode and the adjacent first electrode is changed, and the deviation between the electron collision position and the “predetermined position” in the phosphor region is corrected. Accordingly, it is possible to reduce a change in luminance due to a shift in the trajectory of electrons. Further, since a voltage having a value of V _{R_SEL} −ΔV _{CI — n} is applied to the second electrode, the potential difference between the selected first electrode and the second electrode is always kept at ΔV _{CI — n} . In the present invention, for example, in the manufacturing process of the flat display device, the luminance change caused by the change in the electron collision position in the phosphor region is measured, and the voltage applied to the first electrode is set based on the measurement result. In the case where the change in the collision position of electrons in the phosphor region changes with time, the voltage applied to the first electrode can be set according to the accumulated operation time of the flat display device. It is also possible to change the mode.

Here, in the present invention, the voltage V _{R_OTH} may be changed according to the value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} . In the present invention, a voltage having a value of V _{R_SEL} −ΔV _{CI — n} is applied to the second electrode. Therefore, _when the value of the voltage V _{R_SEL} is changed, the voltage of the second electrode is also changed. When the voltage V _{R_OTH} is a constant value, the potential difference between the other first electrode and the second electrode excluding the selected first electrode and the adjacent first electrode also changes according to the value of V _{R_SEL} . On the other hand, in the configuration in which the voltage V _{R_OTH} is changed according to the value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} , the potential difference between the other first electrode and the second electrode is V _{R_SEL} −V _{R_PRE} −ΔV. _{R_NOR−} (V _{R_SEL} −ΔV _{CI_n} ) = − V _{R_PRE} −ΔV _{R_NOR} + ΔV _{CI_n} , which is irrelevant to the value of V _{R_SEL} . Accordingly, the amount of charge accumulated in the capacitance formed between the other first electrode and the second electrode is not affected by the change in the voltage V _{R_SEL} . Thereby, the delay of the signal transmitted through the second electrode can be reduced.

In the present invention, the voltage V _{R_PRE} can be a constant value. In this configuration, the potential difference between the selected first electrode and the adjacent first electrode is adjusted by changing the value of the voltage V _{R_SEL} applied to the selected first electrode. In this case, the voltage V _{R_OTH} can be a constant value, or the voltage V _{R_OTH} can be changed according to the value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} .

Alternatively, in the present invention, the voltage V _{R_SEL} may be a constant value. In this configuration, the potential difference between the selected first electrode and the adjacent first electrode is adjusted by changing the voltage V _{R_PRE} applied to the adjacent first electrode. In the present invention, a voltage of V _{R_SEL} −ΔV _{CI_n} is applied to the second electrode. In this configuration, the voltage V _{R_SEL} is kept at a constant value. Therefore, there is an advantage that it is not necessary to change the voltage applied to the second electrode in _{accordance with} the change in V _{R_PRE} . Incidentally, the voltage V _{R_PRE} in the case of relatively positive than the voltage V _{R_OTH} is depending on the value of the voltage V _{R_PRE,} electrons are emitted from the electron emitting region EA corresponding to the adjacent first electrode. Therefore, it is preferable that the voltage V _{R_PRE} is applied within a range in which light emitted from the phosphor region corresponding to the adjacent first electrode is not visible. More desirably, the voltage V _{R_PRE} is preferably applied within a range where the potential difference between the selected first electrode and the second electrode does not exceed the cut-off voltage. Alternatively, in the present invention, by _{setting ΔVR_NOR} > _{VR_SEL} − _{VR_OTH} , a voltage lower than the voltage _{VR_OTH} applied to the other first electrode when driving the adjacent first electrode is a constant value. The bias voltage can be applied as a bias voltage to reduce the potential difference between the selected first electrode and the second electrode.

In the present invention including the above preferred embodiment, one spacer is provided between the cathode panel and the anode panel for each of the plurality of first electrodes on the first electrode along the first direction. It can also be set as the aspect arrange | positioned. Usually, the spacer tends to be charged with positive charges on the surface thereof due to collision of backscattered electrons or the like. Therefore, an attractive force acts on the electrons passing through the vicinity of the spacer so as to go to the spacer due to the charging of the spacer surface. At this time, when the first electrode located below the spacer is the selected first electrode, the selected first electrode is set to the voltage V _{R_SEL} , and the adjacent first electrode so as to satisfy V _{R_SEL} −V _{R_PRE} <ΔV _{R_NOR} . A voltage V _{R — PRE} is applied to the electrode. Thereby, the electron trajectory can be corrected in a direction away from the spacer. When the first electrode located below the spacer is the adjacent first electrode, the selected first electrode has the voltage V _{R_SEL} and the adjacent first electrode so as to satisfy V _{R_SEL} −V _{R_PRE} > ΔV _{R_NOR.} Is applied with a voltage V _{R_PRE} . Thereby, the electron trajectory can be corrected in a direction away from the spacer. In this case, it is possible to adjust both values of the voltage V _{R_SEL} and the voltage V _{R_PRE} , or to adjust either one of the values. The voltage V _{R_PRE} may be a constant value, or the voltage V _{R_PRE} may be a constant value. Further, the voltage V _{R_OTH} may be a constant value, or the voltage V _{R_OTH} may be changed according to the value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} . Further, the distance between the branch electrode constituting the first electrode located below the spacer and the trunk electrode constituting the adjacent first electrode adjacent to the branch electrode constitutes the first electrode located below the spacer. When the first electrode located below the spacer and wider than the distance between the stem electrode and the branch electrode constituting the other first electrode adjacent to the stem electrode is the selected first electrode, the adjacent first electrode _May be configured to apply a voltage V _{R_PRE} having a value lower than the voltage V _{R_OTH} applied to the other first electrode. Thereby, the polarity of the so-called bias voltage can be made uniform, and the drive circuit configuration of the cathode electrode can be simplified.

  In the present invention, the first electrode can be driven by the first electrode drive driver, and the second electrode can be driven by the second electrode drive driver. Can be used. In addition, a circuit (a cathode electrode driving power source or a gate electrode driving power source) that generates a voltage to be applied to each of the first electrode and the second electrode can also be configured from a known circuit (power source).

  In the present invention, as a gradation control method, a voltage modulation method (a method of changing the voltage applied to the second electrode in accordance with the gradation when the first electrode is selected and scanned), a pulse width modulation method [ PWM (Pulse Width Modulation) method. A method in which the applied voltage to the second electrode is constant, the applied voltage pulse width is variable, and gradation control is performed in time. A method in which the applied voltage to the second electrode is made constant, the applied voltage pulse width is made constant, and gradation control is performed by the number of applied voltage pulses], a frame extraction method (the applied voltage is made constant, and the presence or absence of frame display is controlled. ), Subfield display method (method in which one frame is divided into subfields having a time width corresponding to a power of 2, and gradation control is performed by combining the subfields) Such a known gradation control method can be employed.

  In the present invention, specific combinations of the values of N and M are specifically (1920, 1080), (1920, 1035), (1024, 768), (800, 600), (640, 480), (720 , 480), (1280, 960), (1280, 1024) and the like, but some of the image display resolutions can be exemplified, but the present invention is not limited to these values. In the case of color display, the above N may be tripled.

  The flat display device according to the present invention can be a cold cathode field emission display device having an electron emission region composed of one or a plurality of cold cathode field emission devices (hereinafter abbreviated as field emission devices). Alternatively, a flat display device having an electron emission region composed of a metal / insulating film / metal type element (also referred to as an MIM element), and a flat type having an electron emission region composed of a surface conduction type electron emission element It can also be a display device.

Here, when the flat display device is a cold cathode field emission display device, the cold cathode field emission display device is formed by joining a cathode panel and an anode panel at their peripheral portions,
The cathode panel
(A) a support,
(B) N cathode electrodes formed on the support and extending in the second direction;
(C) an insulating layer formed on the support and the cathode electrode;
(D) a gate electrode formed on the insulating layer and extending in a first direction different from the second direction, and a branch electrode extending from one side of the stem electrode; and
(E) an electron emission region located in an overlapping region between the branch electrode and the cathode electrode constituting the gate electrode;
Consists of
The anode panel is composed of a substrate, and a phosphor region and an anode electrode provided on the substrate and provided corresponding to each electron emission region,
One or a plurality of field emission elements are arranged in the electron emission region,
The gate electrode may correspond to the first electrode, and the cathode electrode may correspond to the second electrode.

  Here, the type of the field emission device is not particularly limited, and a Spindt-type field emission device (a field emission device in which a conical electron emission portion is provided on the cathode electrode located at the bottom of the opening) or a flat type Type field emission device (a field emission device in which a substantially planar electron emission portion is provided on the cathode electrode located at the bottom of the opening).

  In the cathode panel, the first direction and the second direction are preferably orthogonal from the viewpoint of simplifying the structure of the cold cathode field emission display. The overlapping region where the branch electrode and the cathode electrode constituting the gate electrode overlap corresponds to the electron emission region, and the electron emission region is arranged in a two-dimensional matrix in the effective region of the cathode panel.

  In the cold cathode field emission display, a strong electric field generated by a voltage applied to the cathode electrode and the gate electrode is applied to the electron emission portion, and as a result, electrons are emitted from the electron emission portion by the quantum tunnel effect. The electrons are attracted to the anode panel by the anode electrode provided on the anode panel, and collide with the phosphor region. As a result of the collision of electrons with the phosphor region, the phosphor region emits light and can be recognized as an image.

In the cold cathode field emission display, the cathode electrode is connected to the cathode electrode control circuit, the gate electrode is connected to the gate electrode control circuit, and the anode electrode is connected to the anode electrode control circuit. Note that these control circuits can be constituted by known circuits. During actual operation, the voltage (anode voltage) V _A applied to the anode electrode from the anode electrode control circuit is normally constant, and can be, for example, 5 to 15 kilovolts. Alternatively, when the distance between the anode panel and the cathode panel is d ₀ (where 0.5 mm ≦ d ₀ ≦ 10 mm), the value of V _A / d ₀ (unit: kilovolt / mm) is 0. It is desirable to satisfy 5 or more and 20 or less, preferably 1 or more and 10 or less, and more preferably 4 or more and 8 or less.

A field emission device can be generally manufactured by the following method.
(1) forming a cathode electrode on a support;
(2) forming an insulating layer on the entire surface (on the support and the cathode electrode);
(3) forming a gate electrode on the insulating layer;
(4) forming an opening in a portion of the gate electrode and the insulating layer in a region where the cathode electrode and the gate electrode overlap, and exposing the cathode electrode at the bottom of the opening;
(5) A step of forming an electron emission portion on the cathode electrode located at the bottom of the opening.

Alternatively, the field emission device can be manufactured by the following method.
(1) forming a cathode electrode on a support;
(2) forming an electron emission portion on the cathode electrode;
(3) forming an insulating layer on the entire surface (on the support and the electron emission portion or on the support, the cathode electrode and the electron emission portion);
(4) forming a gate electrode on the insulating layer;
(5) A step of forming an opening in a portion of the gate electrode and the insulating layer in an overlapping region between the cathode electrode and the gate electrode and exposing the electron emission portion at the bottom of the opening.

  The field emission device may be provided with a focusing electrode. That is, for example, a field emission element in which an interlayer insulating layer is further provided on the gate electrode and the insulating layer, and a focusing electrode is provided on the interlayer insulating layer, or a focusing electrode is provided above the gate electrode. It can also be a field emission device. Here, the focusing electrode is an electrode for converging the trajectory of emitted electrons that are emitted from the opening and directed toward the anode electrode, thereby improving the luminance and preventing optical crosstalk between adjacent pixels. It is. In a so-called high voltage type cold cathode field emission display, the potential difference between the anode electrode and the cathode electrode is on the order of several kilovolts or more and the distance between the anode electrode and the cathode electrode is relatively long. The electrode is particularly effective. A relative negative voltage (for example, 0 volts) is applied to the focusing electrode from the focusing electrode control circuit. The focusing electrode is not necessarily formed separately so as to surround each of the electron emission portion or the electron emission region provided in the overlapping region where the cathode electrode and the gate electrode overlap, for example, the electron emission portion or You may extend along the predetermined | prescribed arrangement direction of an electron emission area | region.

  In the Spindt-type field emission device, as the material constituting the electron emission portion, molybdenum, molybdenum alloy, tungsten, tungsten alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy, chromium, chromium alloy, and And at least one material selected from the group consisting of silicon (polysilicon and amorphous silicon) containing impurities. The electron emission portion of the Spindt-type field emission device can be formed by various physical vapor deposition methods (PVD method) such as sputtering method and vacuum deposition method, and various chemical vapor deposition methods (CVD method).

In the flat field emission device, it is preferable that the material constituting the electron emission portion is composed of a material having a work function Φ smaller than that of the material constituting the cathode electrode. What is necessary is just to determine based on the work function of the material which comprises a cathode electrode, the electric potential difference between a gate electrode and a cathode electrode, the magnitude | size of the emission electron current density requested | required, etc. Alternatively, the material constituting the electron emission portion may be appropriately selected from materials in which the secondary electron gain δ of the material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode. In the flat type field emission device, carbon, more specifically, amorphous diamond or graphite, a carbon nanotube structure (carbon nanotube and / or graphite nanofiber), as a particularly preferable constituent material of the electron emission portion, Examples thereof include ZnO whiskers, MgO whiskers, SnO ₂ whiskers, MnO whiskers, Y ₂ O ₃ whiskers, NiO whiskers, ITO whiskers, In ₂ O ₃ whiskers, and Al ₂ O ₃ whiskers. In addition, the material which comprises an electron emission part does not necessarily need to be provided with electroconductivity.

The constituent materials of the cathode electrode, gate electrode, and focusing electrode are aluminum (Al), tungsten (W), niobium (Nb), tantalum (Ta), molybdenum (Mo), chromium (Cr), copper (Cu), gold ( Metals such as Au), silver (Ag), titanium (Ti), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn); these metal elements Alloys (eg, MoW) or compounds (eg, nitrides such as TiN, silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi ₂ ); semiconductors such as silicon (Si); carbon thin films such as diamond; ITO ( Examples thereof include conductive metal oxides such as indium oxide-tin oxide, indium oxide, and zinc oxide. In addition, as a method for forming these electrodes, for example, a vapor deposition method such as an electron beam vapor deposition method or a hot filament vapor deposition method, a sputtering method, a combination of a CVD method, an ion plating method, and an etching method; a screen printing method, an ink jet printing method, Various printing methods such as a metal mask printing method; plating methods (electroplating method and electroless plating method); lift-off method; laser ablation method; sol-gel method and the like can be mentioned. According to various printing methods and plating methods, for example, a strip-like cathode electrode or gate electrode can be directly formed.

As a material for constituting the insulating layer and the interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ based materials such glass paste; SiN-based materials; polyimide These insulating resins can be used alone or in appropriate combination. For forming the insulating layer or the interlayer insulating layer, a known process such as a CVD method, a coating method, a sputtering method, or various printing methods can be used.

  Planar shape of the first opening (opening formed in the gate electrode) or the second opening (opening formed in the insulating layer) (shape when the opening is cut in a virtual plane parallel to the support surface) ) Can be any shape such as a circle, an ellipse, a rectangle, a polygon, a rounded rectangle, a rounded polygon. The formation of the first opening can be performed by, for example, anisotropic etching, isotropic etching, a combination of anisotropic etching and isotropic etching, or, depending on the method of forming the gate electrode, The first opening can also be formed directly. The second opening can also be formed by, for example, anisotropic etching, isotropic etching, or a combination of anisotropic etching and isotropic etching.

  In the field emission device, depending on the structure of the field emission device, one electron emission portion may exist in one opening, or a plurality of electron emission portions may exist in one opening. In addition, a plurality of first openings are provided in the gate electrode, one second opening communicating with the first opening is provided in the insulating layer, and one or more are provided in one second opening provided in the insulating layer. There may be an electron emission portion.

In the field emission device, a resistor film may be provided between the cathode electrode and the electron emission portion. By providing the resistor film, the operation of the field emission device can be stabilized and the electron emission characteristics can be made uniform. The material constituting the resistor film includes carbon-based materials such as silicon carbide (SiC) and SiCN, semiconductor materials such as SiN and amorphous silicon, refractory metal oxides such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride, A refractory metal nitride can be exemplified. Examples of the method for forming the resistor film include a sputtering method, a CVD method, and various printing methods. The electrical resistance value per one electron emitting portion is approximately 1 × 10 ⁶ to 1 × 10 ¹¹ Ω, preferably several gigaΩ.

As a support constituting the cathode panel or as a substrate constituting the anode panel, a glass substrate, a glass substrate with an insulating film formed on the surface, a quartz substrate, a quartz substrate with an insulating film formed on the surface, and a surface Examples of the semiconductor substrate include an insulating film. From the viewpoint of reducing manufacturing costs, it is preferable to use a glass substrate or a glass substrate having an insulating film formed on the surface. As a glass substrate, high strain point glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite (2MgO · SiO ₂ ), lead glass (Na ₂ O · PbO · SiO ₂ ) and alkali-free glass can be exemplified.

  In the flat display device, examples of the configuration of the anode electrode and the phosphor region include (1) a configuration in which the anode electrode is formed on the substrate and the phosphor region is formed on the anode electrode, and (2) on the substrate. The structure which forms a fluorescent substance area and forms an anode electrode on a fluorescent substance area can be mentioned. In the configuration (1), a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor region. In the configuration (2), a metal back film may be formed on the anode electrode. The metal back itself may have an anode electrode function.

The anode electrode may be composed of one anode electrode as a whole, or may be composed of a plurality of anode electrode units. In the latter case, it is desirable that the anode electrode unit and the anode electrode unit are electrically connected by an anode electrode resistor layer. The material constituting the anode electrode resistor layer includes carbon-based materials such as carbon, silicon carbide (SiC), and SiCN; SiN-based materials; ruthenium oxide (RuO ₂ ), tantalum oxide, tantalum nitride, chromium oxide, titanium oxide, and the like. Examples thereof include melting point metal oxides and high melting point metal nitrides; semiconductor materials such as amorphous silicon; ITO. It is also possible to realize a stable desired sheet resistance value by combining a plurality of films such as laminating a carbon thin film having a low resistance value on the SiC resistance film. Examples of the sheet resistance value of the anode electrode resistor layer include 1 × 10 ⁻¹ Ω / □ to 1 × 10 ¹⁰ Ω / □, preferably 1 × 10 ³ Ω / □ to 1 × 10 ⁸ Ω / □. it can. The number (Q) of anode electrode units may be two or more. For example, when the total number of phosphor regions arranged in a straight line is q columns, Q = q or q = k · Q (K is an integer of 2 or more, preferably 10 ≦ k ≦ 100, more preferably 20 ≦ k ≦ 50), or a number obtained by adding 1 to the number of spacer groups arranged at a constant interval. It can also be a number that matches the number of pixels or sub-pixels, or an integer fraction of the number of pixels or sub-pixels. The size of each anode electrode unit may be the same regardless of the position of the anode electrode unit, or may vary depending on the position of the anode electrode unit. An anode electrode resistor layer may be formed on one anode electrode as a whole.

The anode electrode (including the anode electrode unit) may be formed using a conductive material layer. As a method for forming the conductive material layer, for example, vapor deposition methods such as electron beam vapor deposition and hot filament vapor deposition, various PVD methods such as sputtering, ion plating, and laser ablation; various CVD methods; various printing methods; lift-off methods; Examples thereof include a sol-gel method. That is, it is possible to form an anode electrode by forming a conductive material layer made of a conductive material and patterning the conductive material layer based on a lithography technique and an etching technique. Alternatively, the anode electrode can be obtained by forming a conductive material based on the PVD method or various printing methods through a mask or screen having a pattern of the anode electrode. The anode electrode resistor layer can also be formed by the same method. That is, an anode electrode resistor layer may be formed from a resistor material, and the anode electrode resistor layer may be patterned based on a lithography technique and an etching technique, or a mask or a screen having an anode electrode resistor layer pattern. The anode electrode resistor layer can be obtained by forming the resistor material through the PVD method and various printing methods. The average thickness of the anode electrode on the substrate (or above the substrate) (when the partition is provided as will be described later, the average thickness of the anode electrode on the top surface of the partition) is 3 × 10 ⁻⁸ m (30 nm) to 7 Examples thereof include x10 ⁻⁷ m (0.7 μm), preferably 1 × 10 ⁻⁷ m (100 nm) to 4 × 10 ⁻⁷ m (0.4 μm).

As the constituent material of the anode electrode, molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), niobium (Nb), tantalum (Ta), gold (Au), silver (Ag), titanium (Ti) ), Cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn), etc .; alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ Silicide such as MoSi ₂ , TiSi ₂ , TaSi ₂ ); Semiconductor such as silicon (Si); Carbon thin film such as diamond; Conductive metal oxide such as ITO (indium oxide-tin oxide), indium oxide, zinc oxide can do. When the anode electrode resistor layer is formed, the anode electrode is preferably made of a conductive material that does not change the resistance value of the anode electrode resistor layer. For example, the anode electrode resistor layer is made of silicon carbide (SiC). In this case, the anode electrode is preferably made of aluminum (Al).

  The phosphor region may be composed of monochromatic phosphor particles or may be composed of three primary color phosphor particles. The arrangement pattern of the phosphor regions is dot-like. Specifically, when the flat display device is a color display, examples of the arrangement and arrangement of the phosphor regions include a delta arrangement, a stripe arrangement, a diagonal arrangement, and a rectangle arrangement. That is, one row of the phosphor regions arranged in a straight line is occupied by the row occupied by the red light emitting phosphor region, the row occupied by the green light emitting phosphor region, and the blue light emitting phosphor region. May be composed of a row in which a red light-emitting phosphor region, a green light-emitting phosphor region, and a blue light-emitting phosphor region are sequentially arranged. Here, the phosphor region is defined as a phosphor region that generates one bright spot in the flat display device. One pixel (one pixel) is composed of a set of one red light emitting phosphor region, one green light emitting phosphor region, and one blue light emitting phosphor region, and one subpixel is one phosphor. The region is composed of one red light emitting phosphor region, one green light emitting phosphor region, or one blue light emitting phosphor region. A gap between adjacent phosphor regions may be filled with a light absorption layer (black matrix) for the purpose of improving contrast.

  For the phosphor region, a luminescent crystal particle composition prepared from luminescent crystal particles is used. For example, a red photosensitive luminescent crystal particle composition (red light-emitting phosphor slurry) is applied to the entire surface and exposed. And developing to form a red light emitting phosphor region, and then applying a green photosensitive luminescent crystal particle composition (green light emitting phosphor slurry) to the entire surface, exposing and developing, and then producing a green light emitting phosphor. A region is formed, and further, a blue photosensitive luminescent crystal particle composition (blue light emitting phosphor slurry) is coated on the entire surface, exposed and developed to form a blue light emitting phosphor region. be able to. Alternatively, after sequentially applying the red light emitting phosphor slurry, the green light emitting phosphor slurry, and the blue light emitting phosphor slurry, each phosphor slurry may be sequentially exposed and developed to form each phosphor region, Each phosphor region may be formed by a screen printing method, an ink jet printing method, a float coating method, a sedimentation coating method, a phosphor film transfer method, or the like. Although the average thickness of the phosphor region on the substrate is not limited, it is desirably 3 μm to 20 μm, preferably 5 μm to 10 μm. The phosphor material constituting the luminescent crystal particles can be appropriately selected from conventionally known phosphor materials. In the case of color display, a phosphor material whose color purity is close to the three primary colors specified by NTSC, white balance is achieved when the three primary colors are mixed, the afterglow time is short, and the afterglow time of the three primary colors is almost equal. It is preferable to combine them.

  A light absorption layer that absorbs light from the phosphor region is preferably formed between adjacent phosphor regions or between the partition wall and the substrate from the viewpoint of improving the contrast of the display image. Here, the light absorption layer functions as a so-called black matrix. As a material constituting the light absorption layer, it is preferable to select a material that absorbs 90% or more of light from the phosphor region. Such materials include carbon, metal thin films (eg, chromium, nickel, aluminum, molybdenum, etc., or alloys thereof), metal oxides (eg, chromium oxide), metal nitrides (eg, chromium nitride), heat resistance Materials such as photosensitive organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and specifically, photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium laminated films Can be illustrated. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate. The light absorption layer depends on the material used, for example, a combination of vacuum deposition method, sputtering method and etching method, a combination of vacuum deposition method, sputtering method, spin coating method and lift-off method, various printing methods, lithography technology, etc. Thus, it can be formed by an appropriately selected method.

  In order to prevent an electron recoiled from the phosphor region or a secondary electron emitted from the phosphor region from entering another phosphor region, so-called optical crosstalk (color turbidity) is generated. Alternatively, it is preferable to provide a partition wall in order to prevent electrons recoiled from the phosphor region or secondary electrons emitted from the phosphor region from colliding with other phosphor regions.

  Examples of the partition wall forming method include a screen printing method, a dry film method, a photosensitive method, a casting method, and a sandblast forming method. Here, in the screen printing method, an opening is formed in a portion of the screen corresponding to a portion where a partition is to be formed, and the partition forming material on the screen is passed through the opening using a squeegee, and the partition is formed on the substrate. In this method, after the formation material layer is formed, the partition wall formation material layer is fired. The dry film method is a method of laminating a photosensitive film on a substrate, removing the photosensitive film at the part where the partition wall is to be formed by exposure and development, embedding the partition wall forming material in the opening generated by the removal, and baking. . The photosensitive film is burned and removed by baking, and the partition wall-forming material embedded in the openings remains to form partition walls. The photosensitive method is a method in which a barrier rib-forming material layer having photosensitivity is formed on a substrate, the barrier rib-forming material layer is patterned by exposure and development, and then fired (cured). The casting method (embossing molding method) refers to a method for forming a partition wall forming material layer by extruding a partition wall forming material layer made of a paste-like organic material or inorganic material onto a substrate from a mold (cast). In this method, the partition wall forming material layer is fired. The sand blast forming method is, for example, forming a partition wall forming material layer on a substrate using a screen printing or metal mask printing method, a roll coater, a doctor blade, a nozzle discharge type coater, etc. In this method, the part of the partition wall forming material layer to be covered is covered with a mask layer, and then the exposed part of the partition wall forming material layer is removed by sandblasting. After the partition wall is formed, the partition wall may be polished to flatten the top surface of the partition wall.

  As the planar shape of the part surrounding the phosphor region in the partition wall (corresponding to the inner contour line of the projected image of the partition wall side surface, which is a kind of opening region), rectangular shape, circular shape, elliptical shape, oval shape, triangular shape, Examples include pentagonal or more polygonal shapes, rounded triangular shapes, rounded rectangular shapes, rounded polygons, and the like. By arranging these planar shapes (planar shapes of the opening regions) in a two-dimensional matrix, a lattice-like partition is formed. This two-dimensional matrix-like arrangement may be arranged, for example, like a cross or like a zigzag.

Examples of the partition wall forming material include photosensitive polyimide resin, lead glass colored with a metal oxide such as cobalt oxide, SiO ₂ , and a low melting point glass paste. A protective layer (for example, made of SiO ₂ , SiON, or AlN) is provided on the surface (top surface and side surface) of the partition wall to prevent an electron beam from colliding with the partition wall and releasing gas from the partition wall. It may be formed.

In the cold cathode field emission display device, since the space between the anode panel and the cathode panel is in a vacuum state, it is necessary to arrange a spacer between the anode panel and the cathode panel. The cold cathode field emission display is damaged by atmospheric pressure. Examples of the rigid material constituting the spacer include ceramic and glass. Ceramic materials include aluminum silicate compounds such as mullite, aluminum oxide such as alumina, barium titanate, lead zirconate titanate, zirconia (zirconium oxide), cordiolite, barium borosilicate, iron silicate, glass ceramic materials, etc. Examples thereof include those added with titanium oxide, chromium oxide, magnesium oxide, iron oxide, vanadium oxide, nickel oxide, and the like. For example, materials described in JP-T-2003-524280 are used. You can also. Glass materials include high strain point glass, low alkali glass, alkali-free glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite ( 2MgO · SiO ₂ ) and lead glass (Na ₂ O · PbO · SiO ₂ ) can be exemplified. In addition, it is preferable to chamfer the end portion of the spacer to remove the protruding portion and the like. For example, the spacer may be fixed by being sandwiched between partition walls, which will be described later, provided on the anode panel. Alternatively, for example, a spacer holding part is formed on the anode panel and / or the cathode panel, and the spacer holding part is formed. It may be fixed by.

An antistatic film, a resistor film, or the like may be provided on the surface of the spacer. As a material having a secondary electron emission coefficient close to 1 constituting the antistatic film, a semimetal such as graphite, an oxide, a boride, a carbide, a sulfide, and a nitride can be used. For example, compounds containing a metalloid element such as a semi-metal and MoSe _x such as _{graphite, CrO x, NdO x, La} x Ba 2-x CuO 4, La x Ba 2-x CuO 4, La x Y 1-x CrO Oxides such as ₃ ; borides such as AlB _x and TiB _x ; carbides such as SiC; sulfides such as MoS _x and WS _x ; and nitrides such as BN, TiN and AlN; For example, materials described in JP-T-2004-500688 and the like can be used. Examples of the material constituting the resistor film include ruthenium oxide (RuO _x ) and cermet. The film provided on the surface of the spacer such as an antistatic film may be made of a single type of material or may be made of a plurality of types of materials. For example, the film may have a single layer structure, and the layer may be composed of a plurality of types of materials, or the film may be formed by laminating a plurality of layers, and each layer may be composed of different materials. . These films can be formed by a known method such as sputtering, vapor deposition, CVD, or screen printing. Moreover, what is necessary is just to set arbitrarily the film thickness of these films | membranes as needed.

When the cathode panel and the anode panel are joined by a joining member, the whole joining member may be composed of an adhesive layer such as frit glass, or the joining member may be a rod shape or a frame shape (frame shape). A frame made of a rigid material such as glass or ceramics, an adhesive layer provided on the surface of the frame on the cathode panel side, and an adhesive layer provided on the surface of the frame on the anode panel side It can also be set as the structure which consists of. By appropriately selecting the height of the frame, it is possible to set the facing distance between the cathode panel and the anode panel to be longer than in the configuration in which the entire joining member is made of an adhesive layer. As a material constituting the adhesive layer, a frit glass such as a B ₂ O ₃ —PbO-based frit glass or a SiO ₂ —B ₂ O ₃ —PbO-based frit glass is generally used, but a so-called melting point of about 120 to 400 ° C. A low melting point metal material may be used. Such low melting point metal materials include In (indium: melting point 157 ° C.); indium-gold based low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C.), Sn ₉₅ Cu ₅ (melting point 227 to 370 ° C.) C) tin (Sn) type high temperature solder such as Pb _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304 to 365 ° C.), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.), etc. Lead (Pb) high temperature solder; zinc (Zn) high temperature solder such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Sn ₅ Pb ₉₅ (melting point 300 to 314 ° C.), Sn ₂ Pb ₉₈ (melting point 316 to 322) Tin-lead standard solder such as ° C); brazing material such as Au ₈₈ Ga ₁₂ (melting point 381 ° C) (the above subscripts all represent atomic%).

  When joining the three members of the cathode panel, the anode panel, and the joining member, the three members may be joined at the same time, or in the first stage, either the cathode panel or the anode panel and the joining member are joined, In the second stage, the other of the cathode panel or the anode panel and the joining member may be joined. If the three-party simultaneous bonding or the second stage bonding is performed in a high vacuum atmosphere, the space surrounded by the cathode panel, the anode panel, and the bonding member becomes a vacuum simultaneously with the bonding. Alternatively, after the three members are joined, the space surrounded by the cathode panel, the anode panel, and the joining member can be evacuated to create a vacuum. When exhausting after joining, the pressure of the atmosphere at the time of joining may be normal pressure / depressurized, and the gas constituting the atmosphere may be air, or nitrogen gas or group 0 of the periodic table An inert gas containing a gas belonging to (for example, Ar gas) may be used.

  When exhaust is performed, the exhaust can be performed through an exhaust pipe connected in advance to the cathode panel and / or the anode panel. The exhaust pipe is typically a glass pipe, or a metal or alloy having a low coefficient of thermal expansion [for example, an iron (Fe) alloy containing 42 wt% nickel (Ni), 42 wt% nickel (Ni), An iron (Fe) alloy containing 6% by weight of chromium (Cr)], and an ineffective region of the cathode panel and / or the anode panel (a central portion that performs a practical function as a flat display device) After the space has reached a predetermined degree of vacuum, it is joined to the periphery of the penetrating part provided in the frame surrounding the effective area, which is the display area, using the frit glass or the low melting point metal material. It can be sealed by thermal fusion, or it can be sealed by crimping. In addition, if the whole flat display device is once heated and then cooled before sealing, it is preferable because residual gas can be released into the space, and this residual gas can be removed out of the space by exhaust. .

  According to the present invention, a change in luminance that occurs in the phosphor region corresponding to the first electrode can be easily reduced by adjusting the potential difference between the selected first electrode and the adjacent first electrode. Further, the adjustment of the potential difference between the selected first electrode and the adjacent first electrode can be performed according to the degree of the luminance change generated in the phosphor region. Thereby, a flat display device having excellent display performance can be obtained.

  First, in order to help understanding of the present invention, a basic operation principle and an outline of a flat display device will be described.

The basic operation principle will be described based on the display device described in the background art. FIG. 1A is a diagram schematically showing an operation when the gate electrode 13 _m of the display device is selected. The gate electrode 13 corresponds to the first electrode, and the cathode electrode 11 corresponds to the second electrode.

In a manner similar to that described with reference to FIG. 20 in the background, the voltage V _{R_on} (e.g. 35 volts) is applied to the gate electrode 13 _m, the voltage V _{R_off} the gate electrode 13 _m-1 (e.g., 0 volts) is applied Has been. A certain predetermined voltage V _c is applied to the cathode electrode 11. By an electric field formed between the gate electrode 13 _m and the gate electrode 13 _m-1, the trajectory of electrons emitted from the electron emission regions EA TR _m, a gate electrode 13 _m-1 of the gate electrode 13 _m than the potential Is higher than the potential of the main electrode 13A _m that constitutes the gate electrode 13 _m . As described in the background art, the amount of electrons emitted from the electron emission region EA is determined according to the potential difference between the gate electrode 13 _m and the cathode electrode 11, that is, V _{R_on} −V _c .

Next, an example of a state in which the potential difference between the gate electrode 13 _m and the adjacent gate electrode 13 _m-1 is changed using the state of FIG. FIG. 1B is a diagram schematically showing an operation when the voltages V _{R_on} and ΔV are applied to the selected gate electrode 13 _m in a superimposed manner. At this time, the potential difference between the gate electrode 13 _m and the gate electrode 13 _m-1 is V _{R_on} + ΔV−V _{R_off} . Therefore, the degree of deflection of the electron trajectory TR _m emitted from the electron emission region EA increases toward the trunk electrode 13A _m constituting the gate electrode 13 _m if ΔV is positive. On the other hand, if ΔV is negative, the degree of deflection toward the trunk electrode 13A _m constituting the gate electrode 13 _m is weakened (in other words, deflected toward the gate electrode 13 _m−1 ). Therefore, the electron collision position in the phosphor region 22 can be adjusted by adjusting the potential difference between the gate electrode 13 _m and the gate electrode 13 _m−1 . Further, in FIG. 1B, when the voltage ΔV is applied to the gate electrode 13 _m in a superimposed manner, the cathode electrode 11 is not affected by the amount of electrons emitted from the electron emission region EA. Also, the voltage ΔV is superimposed and applied. That is, a voltage of V _c + ΔV is applied to the cathode electrode 11. As a result, the potential difference between the gate electrode 13 _m and the cathode electrode 11 becomes V _{R_on} −V _c , which is maintained as in the state of FIG.

Incidentally, by adjusting the voltage applied to the gate electrode 13 _m-1, may be configured to adjust the potential difference between the gate electrode 13 _m-1 adjacent to the gate electrode 13 _m. Alternatively, by adjusting the voltage applied to the gate electrode 13 _m-1 adjacent to the gate electrode 13 _m both the configuration for adjusting the potential difference between the gate electrode 13 _m-1 adjacent to the gate electrode 13 _m You can also

  In the above, the basic operation principle has been described in order to help understanding of the present invention. Next, an outline of the flat display device will be described.

  A flat display device according to the first embodiment or another embodiment described later (hereinafter may be referred to as the first embodiment or the like) includes: (a) a stem electrode that extends in the first direction, and one side of the stem electrode; Branch electrodes and second electrodes comprising the M first electrodes composed of branch electrodes extending from and N second electrodes extending in a second direction different from the first direction. Line-sequential drive in which the first electrode is sequentially selected as a scanning electrode, comprising: a cathode panel in which an electron emission region is formed in an overlapping region with the electrode; and (b) an anode panel having a phosphor region and an anode electrode. This is a flat display device of the type.

  More specifically, the flat display device of Example 1 or the like includes a cold cathode field emission display device (hereinafter abbreviated as a display device). The display device according to the first embodiment is a display device having a Spindt-type cold cathode field emission device (hereinafter referred to as a field emission device), and a conceptual partial end view of the display device according to the first embodiment is the background. 18 is the same as FIG. 18 described in the technology, and a schematic exploded perspective view of a part of the cathode panel CP and the anode panel AP when the cathode panel CP and the anode panel AP are disassembled is also the same as FIG. The configurations of the cathode panel CP, the anode panel AP, the joining member 26, the spacer 40, and the like are the same as described in the background art. The gate electrode 13 corresponds to the first electrode, and the cathode electrode 11 corresponds to the second electrode. In the following description, the gate electrode 13 and the cathode electrode 11 may be appropriately read as the first electrode and the second electrode, respectively, as necessary.

In the display device of Example 1, etc., (A) the voltage applied to the selected first selected electrode is V _{R_SEL} , and (B) the voltage applied to the adjacent first electrode adjacent to the branch electrode constituting the selected first electrode. V _{R_PRE} , (C) other voltage applied to the first electrode V _{R_OTH} , (D) electrons emitted from the electron emission region by the electric field formed between the selected first electrode and the adjacent first electrode. ΔV _{R_NOR} , (E) an image to be displayed, indicating a potential difference between the selected first electrode and the adjacent first electrode required for deflecting a predetermined amount and causing electrons to collide with a predetermined position in the phosphor region. Accordingly, the potential difference to be applied between the selected first electrode and the nth second electrode is represented as ΔV _{CI —} n (where n = 1, 2,... N). Further, in the display device of Example 1 or the like, by design, electrons emitted from the electron emission area EA are at a predetermined position of the phosphor region (in Example 1 or the like, the geometric center of the phosphor region 22). It is assembled to collide. Accordingly, the selected gate electrode 13 and the adjacent gate electrode 13 required for deflecting a predetermined amount of electrons emitted from the electron emission area EA and causing the electrons to collide with a predetermined position of the phosphor region 22 The potential difference between them (that is, ΔV _{R_NOR} in (D) above) is V _{R_on} −V _{R_off} . This will be described later.

  The basic configuration of the display device according to the first embodiment and the operation when the display device is in an ideal state in terms of design will be described.

An operation example in the case where the gate electrode 13 is sequentially selected as the scanning electrode will be described with reference to FIGS. FIG. 2 shows the arrangement state of the gate electrode 13 and the cathode electrode 11 on the support 10, the connection state of the gate electrode 13 and the gate electrode control circuit 32, and the connection state of the cathode electrode 11 and the cathode electrode control circuit 31. It is the figure shown typically. For convenience of explanation, it is assumed that the gate electrode 13 is sequentially selected from the upper side to the lower side (specifically, the gate electrodes 13 ₁ to 13 _M ) in FIG. 2, and according to the selection of the gate electrode 13. It is assumed that the changing voltage is applied to all the cathode electrodes 11 by the cathode electrode control circuit 31. The left side of FIG. 3 is a schematic cross-sectional view of the vicinity of the cathode electrode 11 _n shown in FIG. 2 in the display device of Example 1 or the like, and the right side of FIG. 3 shows the gate electrode 13 and the cathode electrode 11 during line sequential driving. It is the figure which showed the applied voltage typically. In this display device, when the gate electrode 13 has a relatively positive voltage relative to the cathode electrode 11 and the potential difference between the gate electrode 13 and the cathode electrode 11 exceeds a so-called cut-off voltage (for example, 20 volts), electron emission is performed. Electrons are emitted from the region EA. The amount of electrons emitted from the electron emission area EA changes according to the potential difference between the gate electrode 13 and the cathode electrode 11. A voltage having a value in the range of V _{C_H} (for example, 15 volts) to V _{C_L} (for example, 0 volts) is applied to the cathode electrode 11 according to the luminance of the image. A voltage V _{R_on} (for example, 35 volts) is applied to the selected gate electrode 13 by the gate electrode control circuit 32, and a voltage V _{R_off} (for example, 0 volts) is applied to the other gate electrodes 13. In a state where the voltage V _{R_on} (35 volts) is applied to the gate electrode 13, the amount of electrons emitted from the electron emission region EA corresponding to the selected gate electrode 13 is equal to the voltage V _{C_L} (0 When the voltage V _{C — H} (15 volts) is applied to the cathode electrode 11, the minimum value is obtained. Incidentally, during the selection period T _m-2 gate electrode 13 _m-2 is selected, the selection period T between _m-1 is the gate electrode 13 _m-1 is selected, the selection period the T _m between the gate electrode 13 _m is selected. The same applies to the selection periods T _{m + 1} and T _{m + 2} . For convenience of explanation, V _{C_H} , V _{C_L} , V _{R_on} , and V _{R_off} are 15 volt, 0 volt, 35 volt, and 0 volt, respectively, and the so-called cutoff voltage is 20 volt. The same applies to other embodiments described later.

As shown in FIG. 3, during the selection period T _m-2 , for example, a voltage V _{C — H} (15 volts) is applied to the cathode electrode 11 _n (where n = 1, 2,... N), and the gate electrode 13 the _m-2 the voltage V _{R_on} is applied, the voltage V _{R_off} is applied to the gate electrode 13 otherwise. As described above, in this state, the amount of electrons emitted from the electron emission area EA corresponding to the selected gate electrode 13 _m-2 is minimized. Then, during a selection period T _m-1, the cathode electrode 11 _n include, for example voltage _{(V C_H - (V C_H -V} C_L) / 4) is applied to the gate electrode 13 _m-1 the voltage V _{R_on} applied The voltage V _{R_off} is applied to the other gate electrodes 13. Then, during the selection period T _m, the cathode electrode 11 in the _n for example, a voltage _{(V C_H - (V C_H -V} C_L) / 2) is applied, the voltage V _{R_on} is applied to the gate electrode 13 _m, otherwise A voltage V _{R_off} is applied to the gate electrode 13. Then, during a selection period T _{m + 1,} the cathode electrode 11 _n for example, a voltage _{(V C_H - (V C_H -V} C_L) × 3/4) is applied, the voltage V _{R_on} the gate electrode 13 _{m + 1} And the voltage V _{R_off} is applied to the other gate electrode 13. Then, during the selection period T _{m + 2,} the voltage V _{C_L} is applied to the cathode electrode 11 _n, the voltage V _{R_on} is applied to the gate electrode 13 m _{+ 2,} the voltage V _{R_off} the gate electrode 13 other than it Is applied. As described above, in this state, the amount of electrons emitted from the electron emission area EA corresponding to the selected gate electrode 13 _{m + 2} is maximized. That is, in the operation shown in FIG. 3, an image whose luminance increases as it goes from the phosphor region 22 corresponding to the gate electrode 13 _m−2 to the phosphor region 22 corresponding to the gate electrode 13 _{m + 2} is displayed.

The basic configuration of the display device according to the first embodiment and the operation when the display device is in an ideal state in terms of design have been described above. In FIG. 3, the case where the electrons emitted from each electron emission area EA collide with a predetermined position of the phosphor area 22 by the above operation, that is, the ideal case in terms of design with no variation or the like is shown. Between a selected gate electrode 13 and an adjacent gate electrode 13 required to deflect a predetermined amount of electrons emitted from the electron emission region EA and cause the electrons to collide with a predetermined position of the phosphor region 22. The potential difference (that is, ΔV _{R_NOR} in (D) above) is V _{R_on} −V _{R_off} (35 volts−0 volts = 35 volts).

  The basic operation principle and the outline of the flat display device have been described so as to facilitate the understanding of the present invention. Next, the present invention will be described based on examples with reference to the drawings.

Example 1 relates to a flat display device and a driving method thereof according to the present invention. The first embodiment is characterized in that the voltage V _{R_PRE} is a constant value.

In FIG. 3, the display device is in an ideal state in terms of design. However, in practice, some electron trajectories may vary. FIG. 4 is a diagram schematically showing an example in which a deviation occurs in the trajectory TR _m of electrons emitted from the electron emission area EA. In this example, the trajectory TR _m of electrons emitted from the electron emission region EA corresponding to the selection gate electrode 13 _m is greatly deflected in the −Y direction in FIG. 4 due to, for example, variation in the distance between the gate electrodes. .

Hereinafter, with reference to FIG. 5, an operation for correcting the deviation of the electron trajectory TR _m shown in FIG.

FIG. 5 is a schematic diagram for explaining the operation of the flat display device of Example 1. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode 13 and the cathode electrode 11 during line-sequential driving in the flat display device of Example 1. FIG. The same applies to FIG. 6 to be described later and drawings for explaining other embodiments. The state in which the trajectory of electrons emitted from the electron emission region EA corresponding to the gate electrode 13 _m is shifted has been described with reference to FIG. In FIG. 5, the trajectory TR _m is a trajectory before correction corresponding to the trajectory TR _m in FIG.

In FIG. 5, when the gate electrode 13 _m is selected (that is, during the selection period T _m ), the voltage V _{R_SEL} applied to the selection gate electrode 13 _m is V _{R_on} (35 volts), and the adjacent gate electrode When the voltage V _{R — PRE} applied to 13 _m−1 is V _{R — off} (0 volt), the trajectory TR _m of electrons emitted from the electron emission region EA corresponding to the selection gate electrode 13 _m is − A large deflection is caused in the Y direction due to, for example, variations in the distance between the gate electrodes. Then, electrons collide with a portion of the phosphor region 22 that is separated from the adjacent gate electrode 13 _m-1 with a predetermined position as a reference. Therefore, in the display device of the first embodiment, so as to satisfy V _{R_SEL} -V _{R_PRE} <ΔV _{R_NOR,} voltage V _{R_SEL} the first electrode selecting, applying a V _{R_PRE} the adjacent first electrode. More specifically, as shown in FIG. 5, the voltage V _{R_PRE} applied to the adjacent gate electrode 13 _m-1 is _kept at a constant value (ie, V _{R_off} ), and the voltage V _{R_SEL} applied to the selection gate electrode 13 _m is It is _{assumed that} V _{R_on} −ΔV _m . Note that ΔV _m > 0. As a result, the trajectory TR _m ′ of electrons emitted from the electron emission area EA is less deflected toward the trunk electrode 13A _m constituting the selection gate electrode 13 _m, and the electron collision position in the phosphor area 22 is reduced. The deviation from the “predetermined position” is corrected.

Further, when the gate electrode 13 _m is selected in FIG. 4, the potential difference between the selection gate electrode 13 _m and the nth cathode electrode 11 _n , more specifically, (V _{R_on} − (V _{C_H} − ( V _{C — H} −V _{C — L} ) / 2)) = 27.5 (volts) is a potential difference ΔV to be applied between the selection gate electrode 13 _m and the nth cathode electrode 11 _n according to the image to be displayed. _Corresponds to _{CI_n} . Therefore, in FIG. 5, a voltage having a value of V _{R_SEL} −ΔV _{CI — n} is applied to the _nth cathode electrode 11 _n . Specifically, in FIG.
V _{R_SEL} −ΔV _{CI —n} = V _{R_on} −ΔV _m − (V _{R_on} − (V _{C_H} − (V _{C_H} −V _{C_L} ) / 2))
= (V _C — _H − (V _C — _H −V _C — _L ) / 2) −ΔV _m
= 7.5-ΔV _m (Volt) (1)
Is applied to the _nth cathode electrode 11 _n . In other words, as compared with FIG. 4, during the selection period T _m , a bias of −ΔV _m (volt) is applied to the voltage applied to the cathode electrode 11 _n . Accordingly, the potential difference between the select gate electrode 13 _m and the nth cathode electrode 11 _n shown in FIG. 5 is the same as that in FIG. 4, and the amount of electrons emitted from the electron emission region EA is maintained.

Then, electron trajectories TR _m emitted from the electron emission regions EA contrary to FIG. 4, for example due to variations in the distance between the gate electrodes, a case will be described in which are largely deflected by the + Y direction. In FIG. 6, the trajectory TR _m is the trajectory before correction. In this state, electrons collide with the portion of the phosphor region 22 near the adjacent gate electrode 13 _m-1 with a predetermined position as a reference. Therefore, in the display device of the first embodiment, so as to satisfy V _{R_SEL} -V _{R_PRE>} ΔV _{R_NOR,} voltage V _{R_SEL} the selection gate electrodes 13 _m, the adjacent gate electrodes 13 _m-1 the voltage V _{R_PRE} applied To do. More specifically, as shown in FIG. 6, the voltage V _{R_PRE} applied to the adjacent gate electrode 13 _m-1 is kept at V _{R_off,} and the voltage V _{R_SEL} applied to the selection gate electrode 13 _m is _set to V _{R_on} + ΔV _m . . Note that ΔV _m > 0. Thus, the degree of deflection of the electron trajectory TR _m ′ emitted from the electron emission region EA toward the trunk electrode 13A _m constituting the selection gate electrode 13 _m is increased, and the electron collision position in the phosphor region 22 The deviation from the “predetermined position” is corrected. The voltage applied to the n-th cathode electrode 11 _n, since the same manner as was the bias of bias + [Delta] V _m of - [Delta] V _m described with reference to FIG. 5, description will be omitted.

The second embodiment is a modification of the first embodiment. Specifically, in addition to the operation described in the first embodiment, the voltage V _{R_OTH} is changed according to the value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} . Since other operations are the same as those described in the first embodiment, the description thereof will be omitted.

Hereinafter, a display device and a driving method thereof according to the second embodiment will be described with reference to FIG. Also in FIG. 7, the trajectory TR _m is a trajectory before correction corresponding to the trajectory TR _m in FIG. In a manner similar to that described with reference to FIG. 5 of Example 1, so as to satisfy V _{R_SEL} -V _{R_PRE} <ΔV _{R_NOR,} voltage V _{R_SEL} the first electrode selecting, applying a V _{R_PRE} the adjacent first electrode. In the second embodiment, in addition to this, as shown in FIG. 7, the voltage V _{R_OTH} is changed according to the value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} , and the selection gate electrode 13 _m and the adjacent gate electrode 13 _{m− The} voltage V _{R — OTH} is applied to the other gate electrodes 13 _m−2 , 13 _{m + 1} and 13 _{m + 2} except for ₁ . Specifically, in FIG.
_{V R_SEL -V R_PRE -ΔV R_NOR = (} V R_on -ΔV m) -V R_off - (V R_on -V R_off)
= -ΔV _m (Volt) (2)
It becomes. In other words, as compared with FIG. 5, during the selection period T _m , a bias of −ΔV _m (volt) is applied to the voltages applied to the other gate electrodes 13 _m−2 , 13 _{m + 1} , and 13 _{m + 2.} Is given.

As described in the expression (1) of the first embodiment, during the selection period T _m , a voltage of −ΔV _m (volt) is applied to the voltage applied to the cathode electrode 11 _n . In the second embodiment, a bias of −ΔV _m (volt) is applied to the voltages applied to the other gate electrodes 13 _m−2 , 13 _{m + 1} and 13 _{m + 2} during the selection period T _m . Therefore, unlike the first embodiment, the potential difference between the other gate electrodes 13 _m−2 , 13 _{m + 1} , 13 _{m + 2} and the cathode electrode 11 _n is maintained as in FIG. In other words, the amount of charge accumulated in the capacitance formed between the other gate electrodes 13 _m-2 , 13 _{m + 1} , 13 _{m + 2} and the cathode electrode 11 _n is influenced by the voltage V _{R_SEL} . Not receive. Thereby, the delay of the signal transmitted through the cathode electrode 11 _n can be reduced.

Next, the operation when the trajectory TR _{m of} electrons emitted from the electron emission area EA is largely deflected in the + Y direction will be described. FIG. 8 corresponds to FIG. 6 described in the first embodiment. In FIG. 8, a trajectory TR _m is a trajectory before correction. In this state, electrons collide with the portion of the phosphor region 22 near the adjacent gate electrode 13 _m-1 with a predetermined position as a reference. Therefore, in the display device of the second embodiment, as in FIG. 6, the voltage V _{R_SEL} is applied to the selection gate electrode 13 _m and the voltage is applied to the adjacent gate electrode 13 _m−1 so that V _{R_SEL} −V _{R_PRE} > ΔV _{R_NOR} is satisfied. V _{R_PRE} is applied. Then, the voltage V _{R_OTH} is changed according to the value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} , and the other gate electrodes 13 _m−2 and 13 _m excluding the selection gate electrode 13 _m and the adjacent gate electrode 13 _{m−1. The} voltage V _{R_OTH} is applied to ₊₁ and 13 _{m + 2} . Note that V _R — _OTH = ΔV _m . Similar to FIG. 7, the potential difference between the other gate electrodes 13 _m−2 , 13 _{m + 1} , 13 _{m + 2} and the cathode electrode 11 _n is maintained as in FIG. 4.

Unlike the first and second embodiments, the display device and the driving method thereof according to the third embodiment are characterized in that the voltage V _{R_SEL} is a constant value. More specifically, in Example 3, the collision position of electrons in the phosphor region 22 is adjusted by adjusting the voltage V _{R_PRE} . Hereinafter, a display device and a driving method thereof according to the third embodiment will be described with reference to FIGS. 9 and 10.

Hereinafter, the display device of Example 3 and the driving method thereof will be described with reference to FIG. Also in FIG. 9, the trajectory TR _m is a trajectory before correction corresponding to the trajectory TR _m in FIG. The trajectory TR _m of electrons emitted from the electron emission area EA corresponding to the selection gate electrode 13 _m is largely deflected in the −Y direction due to, for example, variations in the distance between the gate electrodes. Then, electrons collide with a portion of the phosphor region 22 that is separated from the adjacent gate electrode 13 _m-1 with a predetermined position as a reference. Therefore, also in the display device of Example 3, so as to satisfy V _{R_SEL} -V _{R_PRE} <ΔV _{R_NOR,} voltage V _{R_SEL} the first electrode selecting, applying a V _{R_PRE} the adjacent first electrode. In the third embodiment, the voltage V _{R_SEL} is a constant value. Therefore, in the third embodiment, as shown in FIG. 9, the voltage V _{R_SEL} applied to the selection gate electrode 13 _m is _set to V _{R_on,} and the voltage V _{R_PRE} of the value V _{R_off} + ΔV _m is applied to the adjacent gate electrode 13 _m−1. Is applied. Note that ΔV _m > 0. As a result, the trajectory TR _m ′ of electrons emitted from the electron emission region EA is less deflected toward the trunk electrode 13A _m constituting the gate electrode 13 _m, and the electron collision position in the phosphor region 22 and “ The deviation from the “predetermined position” is corrected. In the configuration of the third embodiment, the voltage V _{R_SEL} applied to the selection gate electrode 13 _m is V _{R_on as} in FIG. Therefore, unlike the first and second embodiments, it is not necessary to apply a bias to the voltage applied to the cathode electrode 11 _n during the selection period T _m . In the embodiment, since the cut-off voltage is 20 volts, if ΔV _m −V _{C_L} is 20 volts or less, electrons are not emitted from the electron emission region corresponding to the adjacent first electrode.

Next, the operation when the trajectory TR _{m of} electrons emitted from the electron emission area EA is largely deflected in the + Y direction will be described. FIG. 10 corresponds to FIG. 6 described in the first embodiment. In FIG. 10, a trajectory TR _m is a trajectory before correction. In this state, electrons collide with the portion of the phosphor region 22 near the adjacent gate electrode 13 _m-1 with a predetermined position as a reference. Therefore, in the display device of the third embodiment, as in FIG. 5, the voltage V _{R_SEL} is applied to the selection gate electrode 13 _m and the adjacent gate electrode 13 _m−1 so that V _{R_SEL} −V _{R_PRE} > ΔV _{R_NOR} is satisfied. _{Applies a} voltage V _{R — PRE} . More specifically, as shown in FIG. 10, the voltage V _{R_SEL} applied to the selection gate electrode 13 _m is _set to V _{R_on,} and the voltage V _{R_PRE} of the value V _{R_off} −ΔV _m is applied to the adjacent gate electrode 13 _m−1. Is applied. Note that ΔV _m > 0. Thus, the degree of deflection of the electron trajectory TR _m ′ emitted from the electron emission area EA toward the trunk electrode 13A _m constituting the gate electrode 13 _m increases, and the electron collision position in the phosphor region 22 and “ The deviation from the “predetermined position” is corrected.

Next, a modification will be described with reference to FIGS. 11 and 12. As already described with reference to FIG. 9, when ΔV _m −V _{C — L} exceeds 20 volts in FIG. 9, electrons are emitted from the electron emission region corresponding to the adjacent gate electrode. Therefore, in the modified example, ΔV _{R_NOR} > V _{R_SEL} −V _{R_OTH} is set. FIG. 11 is a diagram corresponding to FIG. 3 and shows a normal operation state of the display device of the modification. In the display device of the modified example, as shown in FIG. 11, when driving the adjacent gate electrode, a bias voltage − of a constant value so as to be lower than the voltage V _{R_off} applied to the other gate electrode. ΔV _pre is applied (ie, only in this modification, ΔV _R — _NOR = V _R — _SEL + ΔV _pre , where ΔV _pre > 0). FIG. 12 is a diagram corresponding to FIG. 9 and shows a state of correction when the trajectory TR _{m of} electrons emitted from the electron emission region EA corresponding to the selection gate electrode 13 _m is largely deflected in the −Y direction. It is shown. In this case, the voltage V _{R_SEL} applied to the selection gate electrode 13 _m is _set to V _{R_on,} and the voltage V _{R_PRE} having a value of V _{R_off} + ΔV _m −ΔV _pre is applied to the adjacent gate electrode 13 _m−1 . That is, as compared with FIG. 9, the potential applied to the adjacent gate electrode 13 _m−1 is lowered by ΔV _pre . The same applies to the operation corresponding to FIG. Thereby, it can suppress that an electron is discharge | released from the electron emission area | region corresponding to an adjacent gate electrode. Qualitatively, ΔV _pre is preferably sufficiently large with respect to ΔV _m .

  Example 4 or other examples described later (hereinafter may be referred to as Example 4) relates to a display device including a spacer and a driving method thereof. More specifically, between the cathode panel and the anode panel, one spacer is arranged on the first electrode along the first direction for each of the plurality of first electrodes.

Further, the fourth embodiment is characterized in that the voltage V _{R_PRE} is a constant value as in the first embodiment. Therefore, the basic operation is the same as in the first embodiment. Hereinafter, a display device and a driving method thereof according to the fourth embodiment will be described with reference to FIGS. 13 and 14 and FIGS. 5 and 6 described in the first embodiment.

13, the spacer 40 disposed on the gate electrode 13 _m-1, showing a state in which the trajectory of electrons emitted from the electron-emitting region EA corresponding to the gate electrode 13 _m-1 is changed schematically FIG. 13, the trajectory of electrons emitted from the electron-emitting region EA corresponding to the gate electrode 13 _m1 and the gate electrode 13 _m1 by the spacers 40 disposed on the gate electrode 13 _m1 TR _m1, TR It is the figure which showed the state which _m has changed typically. The charging of the spacer 40, the trajectory TR _m-1 of the electrons emitted from the electron-emitting region EA corresponding to the gate electrode 13 _m-1 is largely deflected by -Y direction in FIG. 13, corresponding to the gate electrode 13 _m The trajectory TR _m of electrons emitted from the electron emission area EA is greatly deflected in the + Y direction in FIG.

Hereinafter, with reference to FIG. 14, an operation for correcting the shift of the electron trajectories TR _m−1 and TR _m shown in FIG. In FIG. 14, trajectories TR _m-1 and TR _m are trajectories before correction corresponding to the trajectories TR _m-1 and TR _m in FIG. Trajectories TR _m-1 ′ and TR _m ′ are corrected trajectories. The same applies to other drawings to be described later.

In FIG. 14, when the gate electrode 13 _m-1 is selected, the voltage V _{R_SEL} applied to the selected gate electrode 13 _m-1 is V _{R_on} (35 volts), and is applied to the adjacent gate electrode 13 _m-2 . when the voltage V _{R_PRE} being a V _{R_off} (0 volts), the track TR _m-1 of the electrons emitted from the electron-emitting region EA corresponding to the gate electrode 13 _m-1 is by the charging of the spacer, It is greatly deflected in the -Y direction in FIG. Therefore, in the fourth embodiment, when the gate electrode 13 _m-1 is selected, the same processing as that performed on the gate electrode 13 _m in FIG. 5 of the first embodiment is performed. As a result, the trajectory TR _m-1 ′ of electrons emitted from the electron emission area EA is less deflected toward the trunk electrode 13A _m constituting the gate electrode 13 _m, and the collision position of electrons in the phosphor area 22 is reduced. And the “predetermined position” are corrected. As shown in FIG. 14, when the gate electrode 13 _m-1 is a selection gate electrode, the potential difference between the selection gate electrode 13 _m-1 and the adjacent gate electrode 13 _m-2 is V _{R_on} −ΔV _m−1 −. V _{R_off} . Note that ΔV _m-1 > 0.

On the other hand, when the gate electrode 13 _m is selected in FIG. 14, the voltage V _{R_SEL} applied to the selected gate electrode 13 _m is V _{R_on} (35 volts), and the gate electrode 13 _m-1 serving as the adjacent gate electrode ₁₄ is V _{R_off} (0 volt), the trajectory TR _m of electrons emitted from the electron emission region EA corresponding to the gate electrode 13 _m is larger in the + Y direction of FIG. It is deflected. Therefore, in the fourth embodiment, when the gate electrode 13 _m is selected, the same processing as that performed on the gate electrode 13 _m in FIG. 6 of the first embodiment is performed. Thus, the degree of deflection of the electron trajectory TR _m ′ emitted from the electron emission area EA toward the trunk electrode 13A _m constituting the gate electrode 13 _m increases, and the electron collision position in the phosphor region 22 and “ The deviation from the “predetermined position” is corrected. As shown in FIG. 14, when the gate electrode 13 _m-1 is an adjacent gate electrode, the potential difference between the selection gate electrode 13 _m and the adjacent gate electrode 13 _m-2 is V _{R_on} + ΔV _m −V _{R_off} . Note that ΔV _m > 0. Thus, in Example 4, the potential difference between the selection gate electrode 13 _m-1 and the adjacent gate electrode _m-2 when the gate electrode 13 _m-1 is the selection gate electrode, and the gate electrode 13 _m- The potential difference between the select gate electrode 13 _m and the adjacent gate electrode 13 _m-1 is different when ₁ is an adjacent gate electrode.

The fifth embodiment is a modification of the fourth embodiment. In addition to the operation described in the fourth embodiment, similarly to the second embodiment, the voltage V _{R_OTH} is changed according to the value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} . Therefore, the basic operation is the same as in the second embodiment. Hereinafter, with reference to FIG. 15 and FIGS. 7 and 8 described in the second embodiment, a display device and a driving method thereof according to the fifth embodiment will be described.

Also in FIG. 15, trajectories TR _m-1 and TR _m are trajectories before correction corresponding to the trajectories TR _m-1 and TR _m in FIG. Trajectories TR _m-1 ′ and TR _m ′ are corrected trajectories. In the fifth embodiment, when the gate electrode 13 _m-1 is selected, the same processing as that performed when the gate electrode 13 _m is selected in FIG. 7 of the second embodiment is performed. Meanwhile, when the gate electrode 13 _m is selected, it performs the same processing as performed when the gate electrode 13 _m is selected in FIG. 8 of Example 2.

In the fifth embodiment, as described in the second embodiment, the amount of charge accumulated in the capacitance formed between the other gate electrode 13 and the cathode electrode 11 _n is influenced by the voltage V _{R_SEL.} I do not receive it. Thereby, the delay of the signal transmitted through the cathode electrode 11 _n can be reduced.

Unlike the fourth embodiment and the fifth embodiment, the display device of the sixth embodiment and the driving method thereof are characterized in that the voltage V _{R_SEL} is a constant value. More specifically, the electron collision position in the phosphor region 22 is adjusted by adjusting the voltage _{VR_PRE} applied to the adjacent gate electrode. Therefore, the basic operation is the same as that of the third embodiment. Hereinafter, with reference to FIG. 16 and FIGS. 9 and 10 described in the third embodiment, a display device and a driving method thereof according to the fifth embodiment will be described.

Also in FIG. 16, the trajectories TR _m-1 and TR _m are the trajectories before correction corresponding to the trajectories TR _m-1 and TR _m in FIG. Trajectories TR _m-1 ′ and TR _m ′ are corrected trajectories. In the sixth embodiment, when the gate electrode 13 _m-1 is selected, the same processing as that performed when the gate electrode 13 _m is selected in FIG. 9 of the third embodiment is performed. As shown in FIG. 16, when the gate electrode 13 _m-1 is a selection gate electrode, the potential difference between the selection gate electrode 13 _m-1 and the adjacent gate electrode 13 _m-2 is V _{R_on} − (ΔV _{m− 1} + V _{R_off} ). Note that ΔV _m-1 > 0.

Meanwhile, when the gate electrode 13 _m is selected, it performs the same processing as performed when the gate electrode 13 _m is selected in FIG. 10 of Example 3. As shown in FIG. 16, when the gate electrode 13 _m-1 is an adjacent gate electrode, the potential difference between the select gate electrode 13 _m and the adjacent gate electrode 13 _m-2 is V _{R_on} − (V _{R_off} −ΔV _m ). It becomes. Note that ΔV _m > 0. Thus, also in Example 6, the potential difference between the selection gate electrode 13 _m-1 and the adjacent gate electrode _m-2 in the case where the gate electrode 13 _m-1 is the selection gate electrode, and the gate electrode 13 _m- The potential difference between the select gate electrode 13 _m and the adjacent gate electrode 13 _m-1 is different when ₁ is an adjacent gate electrode.

The seventh embodiment is a modification of the sixth embodiment. As shown in FIG. 17, the display device of Example 7 includes a branch electrode 13B _m-1 constituting the gate electrode 13 _m-1 located under the spacer 40 and an adjacent gate electrode adjacent to the branch electrode 13B _m-1. 13 distance between the trunk electrode 13A _m-2 constituting the _m-2, the other adjacent to the trunk electrode 13A _m-1 and the main electrode 13A _m-1 constituting the gate electrode 13 _m-1 located below the spacer It is set wider than the distance between the branch electrode 13B _m constituting the gate electrode 13 _m in. When the gate electrode 13 _m-1 located under the spacer is selected, the adjacent gate electrodes 13 _m-2, other voltages V _{R_PRE} lower than the voltage V _{R_OTH} applied to the gate electrode 13 Is applied.

First, the structure of the display device of Example 5 will be described by comparing FIGS. 17 and 13. The display device of FIG. 17 is different from the display device of FIG. 13 in that the branch electrode 13B _m-1 constituting the gate electrode 13 _m-1 located below the spacer 40 and the adjacent gate adjacent to the branch electrode 13B _m-1 are used. that the distance L between the stem electrodes 13A _m-2 constituting the electrode 13 _m-2 is set wider is different. Therefore, the influence of the adjacent gate electrode 13 _{m-2 on} the trajectory TR _m-1 is weakened. The trajectory TR _m-1 is relatively in the + Y direction compared to FIG.

Therefore, by adjusting the interval L, the electron collision position in the phosphor region 22 is set so that the electrons collide with the portion of the phosphor region 22 close to the adjacent gate electrode 13 _m-2 with the predetermined position as a reference. Can do. A trajectory TR _{m-1 in} FIG. 17 indicates the trajectory set in this way.

In the driving method of the display device according to the seventh embodiment, it is performed when the gate electrode 13 _m is selected in FIG. 10 of the third embodiment even when the gate electrode 13 _m-1 is selected. Similar processing is performed. As shown in FIG. 17, at the selection time T _m−1 , the voltage V _{R_PRE} applied to the adjacent gate electrode _m-2 is the voltage applied to the other gate electrodes 13 _m , 13 _{m + 1} , and 13 _{m + 2.} The voltage V _{R_off} −ΔV _m−1 is lower than V _{R_OTH} (that is, V _{R_off} ). Note that ΔV _m-1 > 0. Since the operation at the selection time T _m is the same as that described in the sixth embodiment, the description thereof is omitted.

According to the seventh embodiment, unlike FIG. 16, even when the gate electrode 13 _m-1 is selected, it is the same as that performed when the gate electrode 13 _m is selected in FIG. 10 of the third embodiment. Perform the process. Thereby, the polarity of the so-called bias voltage can be made uniform, and the drive circuit configuration of the cathode electrode can be simplified.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The configurations and structures of the flat display device, the cathode panel and the anode panel, the cold cathode field emission display device and the cold cathode field emission device described in the embodiments are examples, and can be changed as appropriate. The flat display device has been described by taking color display as an example, but it may be a single color display. In some cases, it is not necessary to form a focusing electrode.

  In the embodiment, the common voltage is applied to all the other first electrodes (the first electrode excluding the selected first electrode and the adjacent first electrode). However, the present invention is not limited to this. Absent. The aspect which applies an individual voltage to the 1st electrode except the adjacent 1st electrode among the some 1st electrodes located in the vicinity of the selection 1st electrode may be sufficient. For example, in order to improve the correction efficiency, a voltage similar to the voltage applied to the adjacent first electrode may be applied to the first electrode facing the selected first electrode with the adjacent first electrode interposed therebetween.

  In the field emission device, a mode in which one electron emission portion corresponds to one opening has been described. However, depending on the structure of the field emission device, a mode in which a plurality of electron emission portions correspond to one opening. Alternatively, one electron emission portion may correspond to a plurality of openings. Alternatively, a plurality of first openings may be provided in the gate electrode, a second opening connected to the plurality of first openings related to the insulating layer may be provided, and one or a plurality of electron emission portions may be provided. .

  In the embodiment, the gate electrode corresponds to the first electrode, and the cathode electrode corresponds to the second electrode. Further, the electron emission region is composed of an overlapping region of the first branch electrode and the second electrode constituting the first electrode, and the first branch electrode extends from the first electrode, and the second electrode extends from the second electrode. In which the overlapping region of the first branch electrode and the second branch electrode corresponds to an electron emission region, or the first branch electrode extends from the first electrode, and the second branch electrode extends from the second electrode. In addition, an electron emission region is provided in a portion opposite to the first branch electrode and the second branch electrode (an electron emission region is provided across the end of the first branch electrode and the end of the second branch electrode). The form is also encompassed in the form “the electron emission region is composed of an overlapping region of the first branch electrode and the second electrode constituting the first electrode”.

The electron emission region can also be constituted by an electron emission element commonly called a surface conduction electron emission element. This surface conduction electron-emitting device is formed on a support made of glass, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, palladium oxide ( A pair of electrodes made of a conductive material such as (PdO), having a small area and arranged with a predetermined gap (gap) are formed in a matrix. A carbon thin film is formed on each electrode. The row direction wiring is connected to one electrode of the pair of electrodes, and the column direction wiring is connected to the other electrode of the pair of electrodes. By applying a voltage to the pair of electrodes, an electric field is applied to the carbon thin films facing each other across the gap, and electrons are emitted from the carbon thin film. By causing the electrons to collide with the phosphor region on the anode panel, the phosphor region is excited to emit light, and a desired image can be obtained. The pair of electrodes may be configured by a first electrode and a second electrode. Alternatively, the electron emission region can be formed from a metal / insulating film / metal type element.

FIG. 1A is a diagram schematically showing an operation when the gate electrode of the flat display device is selected. FIG. 1B is a diagram schematically showing an operation when the voltages V _{R_on} and ΔV are applied to the selected gate electrode in a superimposed manner. FIG. 2 is a diagram schematically showing the arrangement state of the gate electrode and the cathode electrode on the support, the connection state between the gate electrode and the gate electrode control circuit, and the connection state between the cathode electrode and the cathode electrode control circuit. is there. The left side of FIG. 3 is a schematic cross-sectional view of the vicinity of the cathode electrode 11 _n shown in FIG. 2 in the flat display device of Example 1 or the like, and the right side of FIG. 3 shows the gate electrode and the cathode electrode during line sequential driving. It is the figure which showed the applied voltage typically. FIG. 4 is a diagram schematically showing an example in which a deviation occurs in the trajectory TR of electrons emitted from the electron emission region. FIG. 5 is a schematic diagram for explaining the operation of the flat display device of Example 1. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 1. FIG. FIG. 6 is a schematic diagram for explaining the operation of the flat display device of Example 1. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 1. FIG. FIG. 7 is a schematic diagram for explaining the operation of the flat display device of Example 2. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 2. FIG. FIG. 8 is a schematic diagram for explaining the operation of the flat display device of Example 2, and the left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 2. FIG. FIG. 9 is a schematic diagram for explaining the operation of the flat display device of Example 2. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 2. FIG. FIG. 10 is a schematic diagram for explaining the operation of the flat display device of Example 3. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 3. FIG. FIG. 11 is a schematic diagram for explaining the operation of the modified example of the flat display device according to the third embodiment. FIG. 11 corresponds to FIG. 3, and the left side of the drawing shows the vicinity of the cathode electrode 11 _n of the flat display device. FIG. 5 is a schematic cross-sectional view, and the right side of the drawing schematically shows voltages applied to the gate electrode and the cathode electrode during line-sequential driving in a modification of the flat display device of Example 3. FIG. 12 is a schematic diagram for explaining the operation of the modified example of the flat display device according to the third embodiment. FIG. 12 corresponds to FIG. 9, and the left side of the drawing shows the vicinity of the cathode electrode 11 _n of the flat display device. FIG. 5 is a schematic cross-sectional view, and the right side of the drawing schematically shows voltages applied to the gate electrode and the cathode electrode during line-sequential driving in a modification of the flat display device of Example 3. 13, the trajectory of electrons emitted from the electron-emitting region EA corresponding to the gate electrode 13 _m1 and the gate electrode 13 _m1 by the spacers 40 disposed on the gate electrode 13 _m1 TR _m1, TR It is the figure which showed the state which _m has changed typically. FIG. 14 is a schematic diagram for explaining the operation of the flat display device of Example 4. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 4. FIG. FIG. 15 is a schematic diagram for explaining the operation of the flat display device of Example 5. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 5. FIG. FIG. 16 is a schematic diagram for explaining the operation of the flat display device of Example 6. The left side of the drawing is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device. The right side is a diagram schematically showing voltages applied to the gate electrode and the cathode electrode during line-sequential driving in the flat display device of Example 6. FIG. FIG. 17 is a schematic diagram for explaining the operation of the flat display device according to the seventh embodiment. The left side of the figure is a schematic cross-sectional view in the vicinity of the cathode electrode 11 _n of the flat display device according to the seventh embodiment. The right side of the figure schematically shows voltages applied to the gate electrode and the cathode electrode during line sequential driving in the flat display device of Example 7. FIG. 18 is a conceptual partial end view of a flat display device having a Spindt type field emission device. FIG. 19 is a schematic exploded perspective view of a part of the cathode panel CP and the anode panel AP when the cathode panel CP and the anode panel AP are disassembled. FIG. 20 shows the details of the electron trajectory when the gate electrode is selected. FIG. 21 is a diagram schematically showing the trajectory of electrons in the vicinity of the spacer when the spacer is positively charged.

Explanation of symbols

CP ... cathode panel, AP ... anode panel, EA ... electron emission region, 10 ... support, 11 ... cathode electrode, 12 ... insulating layer, 13 ... gate electrode, 13A ... stem electrode, 13B ... branch electrode, 14 ... opening, 14A ... first opening, 14B ... second opening, 15 ... electron emission part, 16 ... Interlayer insulating layer, 17 ... convergence electrode, 20 ... substrate, 21 ... partition, 22, 22R, 22G, 22B ... phosphor region, 23 ... light absorption layer (black matrix), 24 ... Anode electrode, 25 ... Spacer holding portion, 26 ... Joint member, 27 ... Power feeding electrode, 31 ... Cathode electrode control circuit, 32 ... Gate electrode control circuit, 33 ...・ Anode electrode control circuit, 40 ・ ・ ・ Spacer

Claims (8)

(A) M first electrodes each consisting of a stem electrode extending in a first direction, a branch electrode extending from one side of the stem electrode, and N extending in a second direction different from the first direction A cathode panel comprising a second electrode of the book, an electron emission region formed in an overlapping region between the branch electrode and the second electrode constituting the first electrode, and
(B) an anode panel comprising a phosphor region and an anode electrode;
A driving method of a flat-type display device of a line sequential driving method in which the first electrode is sequentially selected as a scanning electrode,
(A) The voltage applied to the selected first selected electrode is V _{R_SEL} ,
(B) The voltage applied to the adjacent first electrode adjacent to the branch electrode constituting the selected first electrode is V _{R_PRE} ,
(C) The voltage applied to the other first electrode is V _{R_OTH} ,
(D) Deflection of electrons emitted from the electron emission region by a predetermined amount by an electric field formed between the selected first electrode and the adjacent first electrode so that the electrons collide with a predetermined position in the phosphor region. ΔV _{R_NOR} , the _required potential difference between the selected first electrode and the adjacent first electrode,
(E) Depending on the image to be displayed, the potential difference to be applied between the selected first electrode and the nth second electrode is ΔV _{CI —} n (where n = 1, 2,... N),
And when
When electrons collide with a portion of the phosphor region away from the adjacent first electrode with respect to the predetermined position, the voltage V _{R_SEL} is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} <ΔV _{R_NOR} is satisfied. V _{R_PRE} is applied to the adjacent first electrode,
When electrons collide with a portion of the phosphor region close to the adjacent first electrode with reference to the predetermined position, the voltage V _{R_SEL} is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} > ΔV _{R_NOR} is satisfied. A voltage V _{R_PRE} is applied to the adjacent first electrode,
A driving method of a flat display device, wherein a voltage having a value of V _{R — SEL} −ΔV _{CI —} n is applied to the n th second electrode. _2. The driving method of a flat display device according to claim 1, wherein the voltage V _{R_OTH} is changed according to a value of V _{R_SEL} −V _{R_PRE} −ΔV _{R_NOR} . _{2. The flat panel} display driving method according to claim 1, wherein the voltage V _{R_PRE} is a constant value. _{2. The flat panel} display driving method according to claim 1, wherein the voltage V _{R_SEL} is a constant value. _2. The driving method of a flat display device according to claim 1, wherein [Delta] _{VR_NOR} > _{VR_SEL} - _{VR_OTH} .   2. A spacer between the cathode panel and the anode panel is disposed on the first electrode along the first direction for each of the plurality of first electrodes. A driving method of the flat display device according to the above. The interval between the branch electrode constituting the first electrode located below the spacer and the trunk electrode constituting the adjacent first electrode adjacent to the branch electrode is determined by the stem electrode constituting the first electrode located below the spacer When the first electrode located below the spacer, which is wider than the branch electrode constituting the other first electrode adjacent to the stem electrode, is the selected first electrode, the adjacent first electrode has other 7. The flat _panel display driving method according to claim 6, wherein a voltage V _{R_PRE} having a value lower than the voltage V _{R_OTH} applied to the first electrode is applied. (A) M first electrodes each consisting of a stem electrode extending in a first direction, a branch electrode extending from one side of the stem electrode, and N extending in a second direction different from the first direction A cathode panel comprising a second electrode of the book, an electron emission region formed in an overlapping region between the branch electrode and the second electrode constituting the first electrode, and
(B) an anode panel comprising a phosphor region and an anode electrode;
A line-sequential drive type flat display device in which the first electrode is sequentially selected as a scanning electrode,
(A) The voltage applied to the selected first selected electrode is V _{R_SEL} ,
(B) The voltage applied to the adjacent first electrode adjacent to the branch electrode constituting the selected first electrode is _expressed as V _{R_PRE} ,
(C) The voltage applied to the other first electrode is V _{R_OTH} ,
(D) Deflection of electrons emitted from the electron emission region by a predetermined amount by an electric field formed between the selected first electrode and the adjacent first electrode so that the electrons collide with a predetermined position in the phosphor region. ΔV _{R_NOR} , the _required potential difference between the selected first electrode and the adjacent first electrode,
(E) Depending on the image to be displayed, the potential difference to be given between the selected first electrode and the nth second electrode is _expressed as ΔV _{CI —} n (where n = 1, 2,... N),
And when
When electrons collide with a portion of the phosphor region away from the adjacent first electrode with respect to the predetermined position, the voltage V _{R_SEL} is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} <ΔV _{R_NOR} is satisfied. V _{R_PRE} is applied to the adjacent first electrode,
When electrons collide with a portion of the phosphor region close to the adjacent first electrode with reference to the predetermined position, the voltage V _{R_SEL} is applied to the selected first electrode so that V _{R_SEL} −V _{R_PRE} > ΔV _{R_NOR} is satisfied. The voltage V _{R_PRE} is applied to the adjacent first electrode,
A flat display device, wherein a voltage having a value of V _{R — SEL} −ΔV _{CI —} n is applied to the n th second electrode.

Images