JP2007189193A - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP2007189193A
JP2007189193A JP2006284551A JP2006284551A JP2007189193A JP 2007189193 A JP2007189193 A JP 2007189193A JP 2006284551 A JP2006284551 A JP 2006284551A JP 2006284551 A JP2006284551 A JP 2006284551A JP 2007189193 A JP2007189193 A JP 2007189193A
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JP
Japan
Prior art keywords
region
type
type region
semiconductor device
conductivity type
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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JP2006284551A
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English (en)
Japanese (ja)
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JP2007189193A5 (enExample
Inventor
Taro Sugizaki
太郎 杉崎
Motoaki Nakamura
元昭 中村
Motonari Honda
元就 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2006284551A priority Critical patent/JP2007189193A/ja
Priority to US11/636,656 priority patent/US20070138501A1/en
Publication of JP2007189193A publication Critical patent/JP2007189193A/ja
Publication of JP2007189193A5 publication Critical patent/JP2007189193A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures

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  • Thyristors (AREA)
  • Semiconductor Memories (AREA)
JP2006284551A 2005-12-15 2006-10-19 半導体装置および半導体装置の製造方法 Abandoned JP2007189193A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006284551A JP2007189193A (ja) 2005-12-15 2006-10-19 半導体装置および半導体装置の製造方法
US11/636,656 US20070138501A1 (en) 2005-12-15 2006-12-11 Semiconductor device and method of manufacturing semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005361212 2005-12-15
JP2006284551A JP2007189193A (ja) 2005-12-15 2006-10-19 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2007189193A true JP2007189193A (ja) 2007-07-26
JP2007189193A5 JP2007189193A5 (enExample) 2009-11-05

Family

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Family Applications (1)

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JP2006284551A Abandoned JP2007189193A (ja) 2005-12-15 2006-10-19 半導体装置および半導体装置の製造方法

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US (1) US20070138501A1 (enExample)
JP (1) JP2007189193A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009181979A (ja) * 2008-01-29 2009-08-13 Sony Corp 半導体装置の製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008198935A (ja) * 2007-02-15 2008-08-28 Sony Corp 絶縁ゲート電界効果トランジスタの製造方法。
JP2008204969A (ja) * 2007-02-16 2008-09-04 Sony Corp 半導体装置の製造方法
JP2009064996A (ja) * 2007-09-07 2009-03-26 Sony Corp 半導体装置およびその製造方法
JP2009152270A (ja) * 2007-12-19 2009-07-09 Sony Corp 半導体装置およびその製造方法
US7883941B2 (en) * 2008-05-29 2011-02-08 Globalfoundries Inc. Methods for fabricating memory cells and memory devices incorporating the same
US7940560B2 (en) * 2008-05-29 2011-05-10 Advanced Micro Devices, Inc. Memory cells, memory devices and integrated circuits incorporating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6552398B2 (en) * 2001-01-16 2003-04-22 Ibm Corporation T-Ram array having a planar cell structure and method for fabricating the same
US6462359B1 (en) * 2001-03-22 2002-10-08 T-Ram, Inc. Stability in thyristor-based memory device
US6627924B2 (en) * 2001-04-30 2003-09-30 Ibm Corporation Memory system capable of operating at high temperatures and method for fabricating the same
KR100417894B1 (ko) * 2001-05-10 2004-02-11 삼성전자주식회사 실리사이데이션 저지층의 형성방법
US7042027B2 (en) * 2002-08-30 2006-05-09 Micron Technology, Inc. Gated lateral thyristor-based random access memory cell (GLTRAM)
US7314829B2 (en) * 2004-08-16 2008-01-01 Intel Corporation Method and apparatus for polysilicon resistor formation
US7262443B1 (en) * 2004-12-29 2007-08-28 T-Ram Semiconductor Inc. Silicide uniformity for lateral bipolar transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009181979A (ja) * 2008-01-29 2009-08-13 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US20070138501A1 (en) 2007-06-21

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