JP2007179927A - Thermally insulated container - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thermally insulated container capable of securing a temperature difference between the reacting parts of a reactor composed of two or more reacting parts. <P>SOLUTION: The thermally insulated container is to house the reactor composed of two of more reacting parts having different temperatures. The inner wall surface of the thermally insulated container is composed of two or more regions having different infrared reflectances, and the reacting part having a lower temperature is disposed on the region side having a lower infrared reflectance. Heat dissipation from the reacting part having the lower temperature is expedited, and the temperature difference between the reacting parts of the reactor composed of two or more reacting parts can be secured. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a heat insulating container that accommodates a reactor integrated with a reactor that requires different operating temperatures, such as a vaporizer, a reformer, and a CO remover used in a fuel cell device or the like.

  In recent years, fuel cells using hydrogen as fuel as a clean power source with high energy conversion efficiency have begun to be applied to automobiles and portable devices. A fuel cell is a device that directly extracts electric energy from chemical energy by electrochemically reacting fuel and oxygen in the atmosphere.

  The fuel used in the fuel cell includes hydrogen, but there is a problem in handling and storage due to being a gas at room temperature. When using liquid fuels such as alcohols and gasoline, a vaporizer that vaporizes the liquid fuel, a reformer that extracts hydrogen necessary for power generation by reacting the liquid fuel with high-temperature steam, and a by-product of the reforming reaction. A CO remover or the like that removes certain carbon monoxide is required.

Since the operating temperature of the vaporizer and the CO remover is high, they are housed in a heat insulating container to suppress heat dissipation. Furthermore, a reflection film that reflects infrared rays (wavelength: 0.7 μm to 1 mm) is formed on the inner wall surface of the heat insulating container to reduce the loss of heat energy to the outside (see, for example, Patent Document 1). ).
JP 2004-6265 A

  By the way, the operating temperature of the vaporizer and the CO remover is, for example, about 100 to less than 180 ° C., whereas the operating temperature of the reformer is, for example, about 300 to 400 ° C. or more. As heat propagates and the temperatures of the vaporizer and the CO remover rise, it is difficult to ensure a temperature difference in the reactor.

  The subject of this invention is providing the heat insulation container which can ensure the temperature difference between the reaction parts of the reaction apparatus which consists of two or more reaction parts.

  In order to solve the above problems, the invention according to claim 1 is a heat insulating container that accommodates a reaction device including two or more reaction parts at different temperatures, wherein the heat insulating container has two or more infrared reflectances different from each other. It is characterized in that a low-temperature reaction part having a lower temperature is arranged on a region side having a lower infrared reflectance.

  The invention according to claim 2 is that in the heat insulating container according to claim 1, the inner wall surface of the heat insulating container is provided with an infrared reflecting film having an opening at a position corresponding to the low temperature reaction part. Features.

  The invention according to claim 3 is that in the heat insulating container according to claim 1 or 2, the inner wall surface of the heat insulating container is provided with an infrared absorption film at a position corresponding to the low temperature reaction part. Features.

  According to a fourth aspect of the present invention, in the heat insulating container according to the first aspect, the inner wall surface of the heat insulating container is provided with the infrared reflecting film at a position corresponding to a higher temperature high temperature reaction part, and the low temperature The infrared reflection film is provided at a position corresponding to the reaction portion, and the infrared absorption film is provided inside the infrared reflection film.

  The invention according to claim 5 is the heat insulating container according to claim 1, wherein the infrared absorption film is provided on the inner wall surface of the heat insulating container at a position corresponding to the low temperature reaction part, and the high temperature reaction part The infrared absorbing film is provided at a position corresponding to, and the infrared reflecting film is provided inside the infrared absorbing film.

  Invention of Claim 6 is the heat insulation container as described in any one of Claims 3-5, The product of the absorption coefficient of the said infrared rays absorption film and a film thickness is 2.3 or more, It is characterized by the above-mentioned. .

  The invention according to claim 7 is the heat insulating container according to any one of claims 3 to 5, wherein the infrared absorption film is mainly composed of any one of C, Fe, Co, Pt, and Cr. Features.

  Invention of Claim 8 is the heat insulation container as described in any one of Claims 3-5, The said infrared rays absorption film is a Ta-Si-ON-type amorphous semiconductor, and an absorption coefficient is 100,000 / cm. It is the above.

  The invention according to claim 9 is the heat insulating container according to claim 8, wherein the molar ratio of the Ta—Si—O—N amorphous semiconductor is 0.6 <Si / Ta <1.0 and 0.15 <. N / O <4.1.

The invention according to claim 10 is a heat-insulating container that accommodates a reaction apparatus composed of two or more reaction parts at different temperatures.
On the inner wall surface of the heat insulating container, a first reflective film is provided at a position corresponding to the low temperature reaction part,
The first reflective film is provided at a position corresponding to the high temperature reaction part, and a second reflective film is provided inside the first reflective film.

  The invention described in claim 11 is the heat insulating container according to any one of claims 1 to 10, wherein the reaction apparatus generates hydrogen from a mixture of hydrogen-containing carbon compound and water. It is characterized by including.

  According to the present invention, heat radiation from the lower temperature reaction unit is promoted, and a temperature difference between the reaction units of the reaction apparatus including two or more reaction units can be ensured.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, although various technically preferable limitations for implementing the present invention are given to the embodiments described below, the scope of the invention is not limited to the following embodiments and illustrated examples.

[First Embodiment]
FIG. 1 is a block diagram of a power generator 100 to which the present invention is applied. The power generation device 100 is provided in a notebook personal computer, a mobile phone, a PDA (Personal Digital Assistant), an electronic notebook, a wristwatch, a digital still camera, a digital video camera, a game device, a game machine, and other electronic devices. Yes, it is used as a power source for operating the electronic device main body.

  The power generation device 100 includes a fuel container 101, a reaction device 10, and a power generation cell 102. The fuel container 101 stores fuel such as methanol, ethanol, or butane and water separately or in a mixed state, and supplies a mixed liquid of fuel and water to the reactor 10 by a micro pump (not shown). In the following description, the case where methanol is used as the fuel will be described.

  The reaction apparatus 10 includes a high temperature reaction unit 11 and a low temperature reaction unit 12, the high temperature reaction unit 11 includes a reformer 14, a catalytic combustor 16, and a high temperature heater (not shown), and the low temperature reaction unit 12 is a vaporizer. 13. A CO remover 15 and a low-temperature heater (not shown) are included.

  The vaporizer 13 vaporizes the fuel and water supplied from the fuel container 101. The reformer 14 causes the fuel / water mixture supplied from the vaporizer 13 to react as shown in the chemical reaction formulas (1) and (2) to generate hydrogen gas, carbon dioxide gas, and by-products as main products. This produces a mixed gas of carbon monoxide. The CO remover 15 removes carbon monoxide from the mixed gas by oxidizing it as shown in the chemical reaction formula (3). Hereinafter, the mixed gas from which the carbon monoxide has been removed is referred to as a reformed gas. The reformed gas is supplied to the fuel electrode side of the power generation cell 102.

CH ₃ OH + H ₂ O → 3H ₂ + CO ₂ (1)
2CH ₃ OH + H ₂ O → 5H ₂ + CO + CO ₂ (2)
2CO + O ₂ → 2CO ₂ (3)

  The reformed gas is supplied from the CO remover 15 to the fuel electrode side of the power generation cell 102. Hydrogen gas in the reformed gas is separated into hydrogen ions and electrons by a catalyst provided in the fuel electrode as shown in the electrochemical reaction formula (4). Hydrogen ions pass through the electrolyte membrane and move to the oxygen electrode side, and electrons move to the oxygen electrode through an external circuit. On the oxygen electrode side, as shown in the electrochemical reaction formula (5), a chemical reaction between hydrogen ions that have passed through the electrolyte membrane, electrons supplied from the oxygen electrode through an external circuit, and oxygen gas supplied from the outside air To produce water. Electrical energy can be extracted from the difference in electrode potential between the fuel electrode and the oxygen electrode.

H ₂ → 2H ⁺ + 2e ⁻ (4)
2H ⁺ + 2e ⁻ + 1 / 2O ₂ → H ₂ O (5)

  The hydrogen gas remaining after the electrochemical reaction (hereinafter referred to as off-gas) is supplied to the catalytic combustor 16.

  The catalytic combustor 16 burns with oxygen mixed with fuel and water or off-gas supplied from the fuel container 101, and heats the high temperature reaction section 11 to 250 ° C. or higher, for example, about 250 to 400 ° C. The high-temperature heater heats the high-temperature reaction unit 11 instead of the catalytic combustor 16 at startup, and the low-temperature heater heats the low-temperature reaction unit 12 to about 110 to 190 ° C. at startup.

  The high temperature reaction part 11 and the low temperature reaction part 12 are accommodated in the heat insulation container 30 mentioned later. Between the high temperature reaction part 11 and the low temperature reaction part 12, the piping 21 used as the flow path of a reaction material or a product is provided (refer FIG. 2). Further, the low temperature reaction section 12 is provided with a pipe 22 for allowing reactants to flow in from outside the heat insulating container 30 and out products from the heat insulating container 30 (see FIG. 2).

  The high temperature reaction unit 11, the low temperature reaction unit 12, and the pipes 21 and 22 may be formed by bonding metal plates such as stainless steel (SUS304) or Kovar alloy, or may be formed by bonding glass substrates or the like. Also good.

  Next, the heat insulation container 30 which accommodates the reaction apparatus 10 is demonstrated. FIG. 2 is a cross-sectional view of the heat insulating container 30 that houses the reaction apparatus 10. The heat insulation container 30 has a rectangular parallelepiped shape, and the high temperature reaction part 11 and the low temperature reaction part 12 are accommodated therein. The high temperature reaction part 11 and the low temperature reaction part 12 are connected by a pipe 21, and the high temperature reaction part 11 and the low temperature reaction part 12 are fixed by a pipe 22 that penetrates the heat insulating container 30.

The heat insulating container 30 can be formed by bonding a metal plate such as stainless steel (SUS304) or Kovar alloy, a glass substrate, or the like. The internal space of the heat insulating container 30 is maintained at a low pressure (0.03 Pa or less) in order to prevent heat conduction and convection due to gas molecules.
In addition, a reflective film 31 that reflects infrared rays is formed on the inner wall surface of the heat insulating container 30 in order to suppress heat loss due to radiation from the reaction apparatus 10. For the reflective film 31, for example, a metal having a high infrared reflectance such as gold (Au) can be used.
By these, the heat loss from the reaction apparatus 10 to the heat insulation container 30 exterior can be suppressed.

  Since the heat quantity is conducted from the high temperature reaction part 11 to the low temperature reaction part 12 via the pipe 21, if the heat quantity more than the heat quantity conducted to the heat insulating container 30 is conducted via the pipe 22, the temperature may rise to an appropriate temperature or more. is there. Therefore, the heat radiation promoting part 40 is provided on the inner wall surface of the heat insulating container 30 of the present embodiment at a position corresponding to the low temperature reaction part.

  The heat radiation promoting unit 40 is a region having a higher infrared absorption rate than other regions of the inner wall surface of the heat insulating container 30, absorbs infrared radiation radiated from the low temperature reaction unit 12, and conducts heat to the heat insulating container 30 as heat. Let Thereby, the heat (heat leak) which escapes by radiation from the low temperature reaction part 12 can be increased, and the temperature rise of the low temperature reaction part 12 can be reduced.

  For example, as shown in FIG. 2, the heat radiation promoting unit 40 is provided with an absorption film 32 that absorbs infrared rays inside the reflective film 31 facing the outer wall surface where the pipes 21 and 22 of the low-temperature reaction unit 12 are not provided. Can be formed.

  Hereinafter, the material used for the absorption film 32, the film thickness, and the like will be examined.

[1] Examination of reflectivity First, the reflectivity of the heat dissipation promoting unit 40 is examined.
FIG. 3 is a graph showing the relationship between the area of the heat radiation promoting part 40 and the heat leak (calculated value) when the reflectance of the heat radiation promoting part 40 for infrared rays is changed by 10% between 10% and 90%. (The graph at 20% to 90% is calculated based on the value at 10%). Here, it is assumed that the absorption coefficient of the absorption film 32 is sufficiently large, and there is no infrared ray that passes through the absorption film 32, is reflected by the base or reflection film 31, passes through the absorption film 32 again, and returns into the heat insulating container 30. It was.

  In addition, the size of the low temperature reaction part 12 was 1.0 cm × 2.5 cm × 0.3 cm, and the distance between the low temperature reaction part 12 and the heat insulating container 30 was 0.5 cm. Further, the heat inflow from the pipe 21 and the heat outflow from the pipe 22 were both 0.90 W, and the initial temperature of the low temperature reaction unit 12 was 120 ° C.

For example, when the reflectance of the heat dissipation promoting part 40 is 10%, when the area of the heat dissipation promoting part 40 is 4.0 cm ² , the heat leak is about 0.35 W, and the temperature of the low temperature reaction part 12 is about 40 It can be seen that the temperature drops to about 80 ° C.

[2] Examination of Absorption Coefficient and Film Thickness Next, the absorption coefficient and film thickness of the absorption film 32 when the absorption film 32 is provided on the base of the heat insulating container 30 or the reflection film 31 as the heat radiation promoting part 40 will be examined.

Here, as shown in FIG. 4, the intensity of infrared rays incident on the absorption film 32 is I, the intensity of infrared rays reflected on the surface of the absorption film 32 is R, the absorption coefficient of the absorption film 32 is α, and the surface of the absorption film 32 When the distance (depth) from t is t, the intensity I (t) of the infrared ray transmitted through the absorption film 32 at the position of the distance (depth) t is expressed by the following equation.
I (t) = (IR) exp (−αt)

FIG. 5 shows the relationship between t and I (t) / (IR) (= exp (−αt)) when α is set to 10,000 / cm, 30000 / cm, 60000 / cm, and 100,000 / cm. .
In the case of α = 100000 / cm and t = about 230 nm, the intensity of the infrared light transmitted through the absorption film 32 is less than 10%. That is, if αt> about 2.3, the intensity of infrared light transmitted through the absorption film 32 is less than 10%, and further reflected by the base or the reflection film 31 and transmitted through the absorption film 32 again into the heat insulating container 30. The returning infrared light is less than 1%. Therefore, a film having a film pressure T of αT> about 2.3 is suitable as the absorption film 32.

  On the other hand, when α = 100000 / cm and t = 25 nm, that is, when αt = 0.25, the intensity of infrared light transmitted through the absorption film 32 is about 78%, and is reflected by the base or the reflection film 31 again. Infrared rays that pass through the absorption film 32 and return to the inside of the heat insulating container 30 are about 61%, and thus are not suitable as the absorption film 32.

[3] Examination of radiation wavelength Next, the wavelength radiated from the reaction apparatus 10 is examined. FIG. 6 is a graph showing the relationship between the wavelength of black body radiation and the radiation density at 300 K (27 ° C.), 600 K (327 ° C.), and 900 K (627 ° C.). It can be seen that the radiation density increases at a wavelength of 2 μm or more (0.6 eV or less) at 600 K, and the radiation density increases at a wavelength of 1.24 μm or more (1 eV or less) at 900 K. Therefore, the heat dissipation promoting unit 40 is required to have a low reflectance of infrared rays having a wavelength of 1.24 μm or more.

[4] Examination of metal materials and metalloid materials Metal materials and metalloid materials generally have high reflectivity, but the absorption coefficient is 10 ⁵ / cm or more at most wavelengths and the film thickness is 230 nm. There can be 32 candidates. Therefore, the reflectance of metallic materials and semi-metallic materials is examined.

FIG. 7 shows the reflectance with respect to the wavelengths of Au, Al, Ag, Cu, and Rh. Among them, the reflectance of Rh is relatively low in a wavelength region of 1.24 μm or more, and can be a candidate for the material of the absorption film 32.
Besides, Fe (reflectance 75%), Co (reflectance 78%), Pt (reflectance 78%), Cr (reflectivity 63%), etc. are absorbed as metals having a low reflectance at a wavelength of 1.24 μm. The material of the film 32 can be used.

  Further, graphite (layered carbon) is a metalloid and low reflectivity material. The reflectance of graphite is as small as 42% at a wavelength of 1.24 μm and 47% at 2 μm, and can be used as the material of the absorption film 32. In addition, a carbon material called activated carbon has poor crystallinity and a disordered layered structure, which may also be a candidate material for the absorption film 32.

[5] Examination of non-metallic materials Many semiconductors have a reflectance of 10 to 20% or less in the wavelength region of light wavelength of 1.24 μm or more, which seems to be a suitable material for the absorption film 32, but almost all In this case, the absorption coefficient is extremely small as less than 1 / cm.

  However, it is considered that an amorphous semiconductor having dangling bonds has a high absorption coefficient and can be used as a material for the absorption film 32. For example, amorphous silicon having many dangling bonds has an absorption coefficient of 1000 / cm or more, and can be used as the material of the absorption film 32.

As the absorption film 32, a more suitable amorphous semiconductor material includes a Ta—Si—O—N film. FIG. 8 shows an absorption coefficient (cm) at 0.5 to 3.5 eV (wavelength of about 2.48 μm to 350 nm) for Ta—Si—O—N-based films having resistivity of 1.0 mΩ · cm and 5.5 mΩ · cm. ^-1 ) shows the measurement results. A film having a resistivity of 1.0 mΩ · cm has an absorption coefficient of 100000 / cm or more within this measurement range, and can be used as a material for the absorption film 32.

  Further, the applicant of the present invention applied resistance to a Ta—Si—O—N-based film having a composition in a molar ratio range of 0.6 <Si / Ta <1.0, 0.15 <N / O <4.1. It was found that when the rate is 2.5 mΩ · cm or less, the absorption coefficient is 100000 / cm or more. Therefore, the above material can also be used as the material of the absorption film 32.

[Modification 1]
In the above embodiment, the heat radiation promoting part 40 is provided by providing the absorption film 32 on the reflective film 31. However, as shown in FIG. 9, the reflective film 31 is provided on a part of the inner wall surface of the heat insulating container 30. It is good also as forming the opening part which the foundation | substrate of a heat insulation container exposes, and making an opening part into the heat radiation promotion part 41 by not having. (When the heat insulating container 30 is a glass substrate, most of infrared rays are transmitted. Therefore, the reflectance of the heat insulating container 30 corresponding to the opening is relatively higher than the reflectance of the portion where the heat insulating container 30 that is not the opening and the reflective film 31 overlaps. Will be low.)

[Modification 2]
Alternatively, as shown in FIG. 10, an absorption film 32 is provided on the entire inner wall surface of the heat insulating container 30, and a reflection film 31 is provided on the absorption film 32 except for a part thereof, and an opening through which the absorption film 32 is exposed. It is good also considering the part as the heat dissipation promotion part 42.

[Modification 3]
Moreover, as shown in FIG. 11, while providing the absorption film 32 in a part of inner wall surface of the heat insulation container 30, and providing the reflection film 31 in the other part of the inner wall surface of the heat insulation container, the absorption film 32 is exposed. The opening portion may be used as the heat radiation promoting portion 43. In this case, the outer peripheral portion of the absorption film 32 and the reflection film 31 may partially overlap.

[Modification 4]
Moreover, when the reaction temperature of the reaction apparatus 10 exceeds 600 degreeC, the increase in radiation density will become remarkable (refer FIG. 3). Therefore, a single reflection film 31 is not sufficient and needs to be double. That is, as shown in FIG. 12, it is necessary to provide the second reflective film 34 with a gap 33 inside the external reflective film 31. The gap 33 is formed by a support member 50 made of the same material as the heat insulating container 30, for example. By opening the gap 33, heat conduction from the second reflective film 34 to the first reflective film 31 can be prevented, and the heat insulation efficiency can be increased.

  In this case, as shown in FIG. 13, a heat radiating window 35 may be provided at a position corresponding to the low temperature reaction portion 12 of the second reflective film 34. Since the radiation window 35 is provided, radiation from the low temperature reaction unit 12 is prevented only by the outer reflection film 31, so that the temperature is lower than that of the high temperature reaction unit 11 in which radiation is prevented by the double reflection films 31 and 34. Heat dissipation of the reaction unit 12 is promoted.

[Modification 5]
In the said embodiment, although the heat radiation promotion part 40-43 was provided in the inner wall surface of the heat insulation container 30 facing the outer wall surface in which the pipes 21 and 22 of the low temperature reaction part 12 are not provided, the heat radiation promotion part 40 The amount of heat released by radiation from the low temperature reaction unit 12 may be adjusted by increasing or decreasing the area of ~ 43.

  Here, if the shape facing the outer wall surface where the pipes 21 and 22 of the low temperature reaction part 12 of the heat radiation promotion parts 40 to 43 are not provided can be made the same area as the low temperature reaction part 12 (FIG. 14A). Although the temperature of the low-temperature reaction part 12 becomes uniform, when the shape and size are different (for example, FIG. 14B), the temperature of the low-temperature reaction part 12 may be non-uniform. Here, the range indicated by the solid line in FIG. 14A, the range indicated by the two-dot chain line in FIGS. 14B to 14D, and 15 are opposed to and congruent to the outer wall surface of the low-temperature reaction section 12. Shape.

  Therefore, when reducing the area of the heat radiation promoting parts 40 to 43, it is preferable to disperse the heat radiation promoting parts 40 to 43 uniformly in the range. For example, the heat radiation promoting portions 40 to 43 may be provided in a stripe shape (FIG. 14C) or in a checkered pattern shape (FIG. 14D).

  In addition, the temperature of the low temperature reaction unit 12 is higher on the side where the pipe 21 for conducting heat from the high temperature reaction unit 11 is provided, and is likely to be lower on the side where the pipe 22 for conducting heat to the heat insulating container 30 is provided. Therefore, for example, as shown in FIG. 15, the distribution of the heat radiation promoting parts 40 to 43 is larger on the side where the pipe 21 is provided (left side in FIG. 15), and the heat radiation promoting part is located on the side where the pipe 22 is provided (right side in FIG. 15). You may provide so that distribution of 40-43 may become small. By providing the heat radiation promoting portions 40 to 43 in this way, the heat radiation amount is larger on the high temperature side where the pipe 21 is provided, and the heat radiation amount is smaller on the low temperature side where the pipe 22 is provided, so that the temperature gradient can be reduced. .

It is a block diagram of the electric power generating apparatus 100 with which this invention is applied. It is sectional drawing of the heat insulation container 30 of this invention. It is a graph which shows the relationship between the reflectance and area of the heat dissipation promotion part 40, and a heat leak. It is a schematic diagram which shows the relationship of the infrared rays which inject, reflect and permeate | transmit the absorption film. It is a graph which shows the relationship between t and I (t) / (IR). It is a graph which shows the relationship between the wavelength of black body radiation, and radiation density. It is a graph which shows the reflectance with respect to the wavelength of Au, Al, Ag, Cu, and Rh. It is a graph which shows the result of having measured the absorption coefficient of the Ta-Si-O-N type film. 6 is a cross-sectional view showing a modification of the heat insulating container 30. FIG. It is sectional drawing which shows the modification of the heat insulation container 30 of this invention. It is sectional drawing which shows the modification of the heat insulation container 30 of this invention. 6 is a cross-sectional view showing a modification of the heat insulating container 30. FIG. It is sectional drawing which shows the modification of the heat insulation container 30 of this invention. (A)-(d) is a schematic diagram which shows the shape of the thermal radiation promotion part 40-43. It is a schematic diagram which shows the shape of the heat dissipation promotion part 40-43 of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Reaction apparatus 11 High temperature reaction part 12 Low temperature reaction part 21,22 Piping 30 Heat insulation container 31,34 Reflection film 32 Absorption film 35,36 Radiation window 40-43 Radiation promotion part

Claims (11)

In a heat insulating container containing a reaction apparatus composed of two or more reaction parts at different temperatures,
The heat insulating container is composed of two or more regions having different infrared reflectances,
A heat-insulating container, wherein a low-temperature low-temperature reaction part is disposed on the side of the region having a lower infrared reflectance.   2. The heat insulating container according to claim 1, wherein an infrared reflection film having an opening at a position corresponding to the low temperature reaction portion is provided on an inner wall surface of the heat insulating container.   The heat insulating container according to claim 1, wherein an infrared absorption film is provided on the inner wall surface of the heat insulating container at a position corresponding to the low temperature reaction part.   The inner wall surface of the heat insulating container is provided with the infrared reflection film at a position corresponding to a higher temperature high temperature reaction part, and the infrared reflection film is provided at a position corresponding to the low temperature reaction part, and the infrared ray The heat insulating container according to claim 1, wherein the infrared absorbing film is provided inside the reflective film.   On the inner wall surface of the heat insulating container, the infrared absorption film is provided at a position corresponding to the low temperature reaction part, the infrared absorption film is provided at a position corresponding to the high temperature reaction part, and the infrared absorption film The heat insulating container according to claim 1, wherein the infrared reflective film is provided inside the container.   The heat insulation container according to any one of claims 3 to 5, wherein a product of an absorption coefficient and a film thickness of the infrared absorption film is 2.3 or more.   The heat insulating container according to any one of claims 3 to 5, wherein the infrared absorbing film is mainly composed of any one of C, Fe, Co, Pt, and Cr.   The thermal insulation container according to any one of claims 3 to 5, wherein the infrared absorption film is a Ta-Si-ON-based amorphous semiconductor and has an absorption coefficient of 100,000 / cm or more.   9. The molar ratio of the Ta—Si—O—N amorphous semiconductor is in the range of 0.6 <Si / Ta <1.0 and 0.15 <N / O <4.1. Insulated container as described in 2. In a heat insulating container containing a reaction apparatus composed of two or more reaction parts at different temperatures,
On the inner wall surface of the heat insulating container, a first reflective film is provided at a position corresponding to the low temperature reaction part,
A heat-insulating container, wherein the first reflective film is provided at a position corresponding to the high-temperature reaction part, and a second reflective film is provided inside the first reflective film.   The said reaction apparatus contains the reformer which generates hydrogen from the mixture which mixed the carbon compound and water which contain hydrogen, The heat insulation container as described in any one of Claims 1-10 characterized by the above-mentioned.

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