JP2007170960A - Apparatus and method for measuring thermoelastic property - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To highly sensitively measure the thermoelastic properties of samples to be measured without processing the samples. <P>SOLUTION: Pulse light L0 irradiates a sample 1 to generate elastic waves. A metal thin film 11 is arranged in such a way that a coupling agent 2 for transmitting the elastic waves generated in the sample 1 may be filled between the sample 1 and the metal thin film 11. Measuring light (a leaser beam) irradiates the surface of the metal thin film 11 to generate surface plasmon resonance, and elastic waves are generated in the sample 1 by irradiation with pulse light L0 to detect the intensity of reflected light L2 of the measuring light L1 to the metal thin film 11 by a photodetector 6. The irradiation angle θ of the measuring light L1 is adjusted on the basis of detection results of the reflected light L2 into a condition which enables the highly sensitive measurement of the thermoelastic properties of the surface of the metal thin film 11. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a thermoelastic characteristic measuring apparatus and a thermoelastic characteristic measuring method for measuring a characteristic change when an elastic wave is generated in a sample to be measured.

In recent years, the integration density of semiconductor devices and electronic information recording media has been further improved, and the operating speed has been increased, so that the thermal characteristics of such devices with high spatial resolution from submicrometers to nanometers ( It is very important to measure thermophysical properties and to take measures against heat generation and thermal design based on the measurement results.
For example, in a high-density optical recording device, the recording layer is heated by laser light, and the temperature rise of the recording layer depends on the thermal characteristics of each thin film material such as the recording layer, the multilayer thin film, and the substrate. For this reason, in order to perform high-accuracy thermal design for high-density optical recording devices, it is indispensable to measure the thermal characteristics (thermophysical properties) of the microregions of each thin film material constituting the high-density optical recording device. In addition, it is important to measure the thermal characteristics of a minute region of the thin film material in order to evaluate the possibility that the thin film that thermally expands due to heat generation is peeled off due to thermal stress. In addition, defect detection near the surface of an SOI wafer, which is performed to evaluate the degree of adhesion between the Si substrate and its surface film, and thermal analysis of thin film devices with high thermal loads such as semiconductor lasers, high frequency power devices, DVD recording films, etc. In applications such as stress analysis, defect detection, film adhesion evaluation, and film pressure measurement of an optically opaque metal film, it is important to measure thermal characteristics in a microscopic region of a thin film material.
In contrast, Patent Document 1 irradiates a sample with a laser beam for heating and another laser beam for temperature measurement, and detects the intensity of the reflected light of the laser beam for temperature measurement. A micro-region thermophysical property measuring apparatus for measuring a temperature change is shown. Patent Document 1 also shows that a metal thin film is formed on the surface of a sample in order to increase detection sensitivity of reflected light change (reflectance change).
JP 2000-121585 A

However, the change in reflectance caused by the temperature change of the sample, particularly the change in reflectance in a minute region is often very small. When detecting as a change in reflectivity (change in intensity of reflected light of laser light for temperature measurement), there is a problem that detection sensitivity is poor. On the other hand, as shown in Patent Document 1, when processing to form a metal thin film on the sample surface is performed in order to increase the sensitivity of the change in reflectance of the sample, the processing to form the metal thin film for each sample is troublesome. There was also a problem that there was. Furthermore, since the sample on which the metal thin film is formed can no longer be used as a product, there is a problem that it cannot be used for an inspection or the like that separates a good product from a defective product.
Therefore, the present invention has been made in view of the above circumstances, and its object is to provide a thermoelastic property measuring apparatus capable of measuring the thermal properties of a sample with high sensitivity without processing the sample to be measured. And providing a thermoelastic property measuring method.

In order to achieve the above object, the present invention is applied to a thermoelastic characteristic measuring apparatus or method for measuring a change in characteristics when an elastic wave is generated on a predetermined sample such as a semiconductor or a recording medium, that is, a thermoelastic characteristic. The characteristic is that a metal thin film is arranged between the sample and an elastic wave propagation medium that propagates an elastic wave generated in the sample, and the metal thin film is irradiated by a predetermined measuring light irradiation means. The surface of the sample is irradiated with a predetermined measurement light to cause surface plasmon resonance, an elastic wave is generated in the sample by a predetermined elastic wave generation means, and the measurement light is applied to the metal thin film by a predetermined reflected light detection means. It is configured to detect the intensity of the reflected light.
As a result, the sample is heated by the elastic wave, and the refractive index of the elastic wave propagation medium changes. As a result, the surface plasmon resonance state of the metal thin film in contact with the medium changes, thereby the reflectance of the metal thin film, That is, the intensity of the reflected light changes greatly. Further, there is a correlation between the change in the heating state of the sample due to the elastic wave, the change in the refractive index of the elastic wave propagation medium, and the change in the reflectance of the metal thin film (that is, the change in the intensity of the reflected light). Therefore, according to the above configuration, a minute change in the heating state (thermal characteristic) due to the elastic wave of the sample can be measured with high sensitivity as the intensity change of the reflected light. Moreover, it is not necessary to process the sample to be measured.

Here, as the elastic wave generating means, means for irradiating the sample with laser light subjected to intensity modulation by pulse modulation, sinusoidal modulation or the like can be considered. Accordingly, it is preferable that an elastic wave can be generated in a very small area with high accuracy and in a non-contact manner as compared with a means for bringing a piezoelectric element into contact with a sample.
Further, the measurement light irradiation angle adjusting means for adjusting the irradiation angle (incident angle) of the measurement light to the metal thin film based on the detection result of the reflected light detection means, and the wavelength of the measurement light based on the detection result A configuration in which measuring light wavelength adjusting means for adjusting (one or both of them) is provided is desirable.
As a result, it is possible to adjust the surface plasmon resonance state generated on the surface of the metal thin film so that the thermoelastic characteristics can be measured with high sensitivity.
In addition, as a specific configuration for holding the metal thin film, it is conceivable to provide metal thin film holding means such as a prism that holds the metal thin film while transmitting the measurement light and the reflected light.
The elastic wave propagation medium may be a liquid or gel incompressible fluid (for example, water, alcohol, oil, etc.).

  According to the present invention, the sample is heated by the elastic wave, and the elastic wave propagates to the metal thin film, thereby changing the surface plasmon resonance state of the metal thin film, and reflecting the measurement light irradiated to the metal thin film. The light intensity changes greatly. As a result, a minute change in the heating state (thermal characteristics) due to the elastic wave of the sample can be measured with high sensitivity as the intensity change of the reflected light. In addition, there is no need for processing to form a metal thin film for each sample to be measured, and there is no need to prepare a separate sample dedicated to measuring thermoelastic properties. Can be applied to a wide range of fields.

Embodiments of the present invention will be described below with reference to the accompanying drawings for understanding of the present invention. In addition, the following embodiment is an example which actualized this invention, Comprising: It is not the thing of the character which limits the technical scope of this invention.
FIG. 1 is a diagram showing a schematic configuration of a thermoelastic property measuring apparatus X according to an embodiment of the present invention. FIG. 2 is a diagram showing a first example of a pulsed light irradiation method in the thermoelastic property measuring apparatus X. FIG. 3 is a diagram showing a second embodiment of the pulsed light irradiation method in the thermoelastic property measuring apparatus X, and FIG. 4 is a graph showing the relationship between the incident angle and the reflectance of the measuring light in the metal thin film in the surface plasmon resonance state, FIG. 5 is a flowchart showing a measurement procedure by the thermoelastic property measuring apparatus X.

The thermoelastic characteristic measuring apparatus X according to the embodiment of the present invention is an apparatus that generates an elastic wave in the sample 1 to be measured and measures the characteristic change of the sample 1 when the elastic wave is generated.
Hereinafter, the configuration of the thermoelastic property measuring apparatus X will be described with reference to FIG.
As shown in FIG. 1, the thermoelastic characteristic measuring device X includes a prism 3, a measuring light laser 4, a measuring light reflecting mirror 5 and its direction adjusting device 5a, a photodetector 6, a lens 7, a signal processing device 8, and a computer 9. And a pulse laser 10, a metal thin film 11, a pulsed light reflecting mirror 12, and the like.
The prism 3 has a metal thin film 11 formed on the lower surface thereof, and functions as a holding member for the metal thin film 11. The metal thin film 11 is a thin film having a thickness of about 50 nm, for example, and is held on the lower surface of the prism 3 by vacuum deposition or the like. The material is preferably gold or silver.
Further, the metal thin film 11 on the lower surface of the prism 3 is coupled to the sample 1 with a coupling material 2 (a medium of an elastic wave propagation medium) that propagates an elastic wave generated in the sample 1 by irradiation with the measurement light L1 described later. 1 example) is filled. The coupling material 2 is a liquid or gel incompressible fluid (for example, water, alcohol, oil, etc.).
Here, the coupling material 2 may be hung on the surface of the sample 1 by a spoid or the like and stay between the metal thin film 11 and the sample 1, or the coupling material 2 having a low viscosity such as water may be used as the metal thin film 11. And may flow between the sample 1 and the sample 1.

The measurement light laser 4 irradiates the surface of the metal thin film 11 formed on the lower surface of the prism 3 (the surface on the prism 3 side) with the measurement light L1 that is a laser beam (laser beam) having a predetermined wavelength. Thus, surface plasmon resonance is generated on the surface of the metal thin film 11 (an example of measurement light irradiation means).
The surface plasmon resonance is a phenomenon in which an electron wave on the surface of the metal thin film 11 and light (measurement light L1) irradiated on the surface at a predetermined irradiation angle (incident angle) cause coupling. In the state where resonance occurs, the reflectance of the irradiated light is significantly reduced. The conditions for generating this surface plasmon resonance are the material and thickness of the metal thin film 11, the irradiation angle and wavelength of the irradiation light (measurement light L1), and the refractive index (or dielectric constant) of the coupling material 2 in contact with the metal thin film 11. It is determined by the combination of each condition. In the present embodiment, it is assumed that the thickness of the metal thin film 11 and the wavelength of the measurement light L1 are constant. For this reason, the generation state of the surface plasmon resonance is determined by the irradiation angle of the measurement light L1 and the refractive index of the coupling material 2, and as a result, the reflectance of the measurement light L1 is determined.
Here, in the thermoelastic characteristic measuring device X, the measuring light reflecting mirror 5 that changes the measuring light L1 toward the sample 1 is directed by the direction adjusting device 5a (that is, the irradiation angle of the measuring light L1 with respect to the sample 1). Is supported in an adjustable manner. The state of surface plasmon resonance in the metal thin film 11 can be adjusted by adjusting the irradiation angle of the measurement light L with respect to the sample 1 by the direction adjusting device 5a.

As shown in FIG. 1, the measurement light L1 enters the prism 3 from one side surface (the inclined surface on the left side in FIG. 1) in a direction perpendicular or substantially perpendicular to the surface, and the lower surface metal. The reflected light L2 reflected by the thin film 11 is emitted from the other side surface (the inclined surface on the right side in FIG. 1) to the outside of the prism 3 in a direction perpendicular or substantially perpendicular to the surface. Thus, the prism 3 holds the metal thin film 11 while transmitting the measurement light L1 and the reflected light L2 (an example of a metal thin film holding unit). The holding means for the metal thin film 11 is not necessarily the prism 3, but is another member made of glass or the like that can hold the metal thin film 11 while allowing the measurement light L1 and the reflected light L2 to pass therethrough with almost no loss. It doesn't matter.
The pulse laser 10 outputs a short pulse laser beam L0 having a pulse width of about 10 ps (picoseconds), for example, and the pulse beam L0 is the back surface of the sample 2 (the surface opposite to the arrangement side of the metal thin film 11). ) To generate an elastic wave in the sample 1 (an example of an elastic wave generating means). In the example shown in FIG. 1, the pulsed light L <b> 0 is redirected by the pulsed light reflecting mirror 12 and applied to the back surface of the sample 1.
Here, a pulse laser 10 that irradiates the sample 1 with pulsed light L0 (pulse-modulated laser light) is provided as means for generating an elastic wave in the sample 1, but in addition to this, for example, intensity modulation of a sine wave It is also conceivable to employ other means for irradiating the sample 1 with intensity-modulated laser light, such as a laser light output device that outputs laser light subjected to.

The photodetector 6 detects the measurement light L1 by converting the intensity of the reflected light L2 reflected from the surface of the metal thin film 11 into an electric signal (voltage) (an example of reflected light detection means). For example, it is configured by a photodiode or the like. The reflected light L2 is collected by the lens 7 and is incident on the photodetector 6.
The signal processing device 8 performs signal processing such as amplification processing and filtering processing for noise removal on the detection signal (intensity signal) of the reflected light L2 detected by the photodetector 8. The reflected light detection signal processed by the signal processing device 8 is taken into the computer 9.
By executing a predetermined control program, the computer 9 captures the reflected light detection signal and records it in a storage device such as a hard disk, and controls the output timing of the pulsed light L0 by the pulse laser 10 and controls the direction adjusting device 5a. (In other words, the control of the irradiation angle of the measurement light L1 with respect to the sample 1) and various calculation processes for the reflected light detection signal are performed.
Here, although not shown in FIG. 1, it is more preferable to provide a moving mechanism for moving the relative position of the sample 1 with respect to the trajectories of the measuring light L1 and the pulsed light L0. By performing measurement while moving the position by this moving mechanism, it is possible to easily measure the characteristics of each part of the sample 1 and obtain the characteristic distribution. As a moving mechanism in this case, for example, a sample stage made of a material such as a transparent glass that transmits the pulsed light L0 or a material that moves the sample 1 by holding the edge portion of the sample 1 with a robot arm or the like is used. It is conceivable to place the sample 1 and move the sample stage.

FIG. 4 is a graph showing the relationship between the irradiation angle θ (incident angle) of the measurement light L1 and the reflectance in the metal thin film 11 having a thickness of 50 nm in a surface plasmon resonance state.
Further, each of the graphs g1, g2, and g3 in FIG. 4 shows that when the refractive index of water as the coupling material 2 is a predetermined reference refractive index (= n0) (g1), When the refractive index is changed by 10 ⁻⁴ minutes (= n0 (1 + 10E−4)) (g2), and the refractive index changed by 10 ⁻³ minutes with respect to the reference refractive index (= n0 (1 + 10E−3)) ) Represents the graph of (g3).
As can be seen from FIG. 4, the reflectance of the metal thin film 11 in the surface plasmon resonance state is such that the irradiation angle θ of the measurement light L1 is a predetermined angle (in the example of FIG. 4, between 71.0 ° and 71.5 °). ), The minimum state is almost 0 (zero), and the change in the angle before and after that becomes steep.
Further, the reflectance characteristic with respect to the irradiation angle θ of the measuring light L1 is shifted by about 0.1 ° with respect to the irradiation angle θ only by changing the refractive index of the coupling material 2 by only 10 ⁻³ . As described above, the state of surface plasmon resonance in the metal thin film 11 is changed by a minute change in the refractive index of the coupling material 2, and the reflectance of the metal thin film 11 (that is, the intensity of the reflected light L2) is greatly changed.
For example, in the measurement conditions of the graph of FIG. 4, when the irradiation angle θ of the measurement light L1 is set to 70.5 °, the reflection when the refractive index of the coupling material 2 is the reference refractive index (= n0). The reflectance R2 when the refractive index changes by 10 ⁻³ minutes with respect to the index R1 is about 1.28 times (R2 / R1≈1.28). That is, the intensity of the reflected light L2 changes about 1.28 times. Thereby, the minute change (thermal characteristic) of the heating state by the elastic wave of the sample 1 can be measured with high sensitivity as the intensity change of the reflected light L2.

Next, a procedure for measuring thermoelastic properties by the thermoelastic property measuring apparatus X will be described with reference to the flowchart shown in FIG.
The measurement procedure is roughly divided into an adjustment step (S1 to S5) for adjusting the irradiation angle of the measurement light L1, and a measurement step (S6 to S10) for measuring the sample 1 in a state where the irradiation angle of the measurement light L1 is adjusted. After the adjustment process is performed in advance, one or a plurality of measurement processes are performed. S1, S2,... Shown below represent identification codes of processing procedures (steps).
<Adjustment process: Steps S1 to S5>
In the adjustment step, first, output of measurement light by the measurement light laser 4 is started (S1).
Next, the direction adjustment device 5a is controlled by the computer 9 to set the irradiation angle of the measurement light L1 with respect to the sample 1 (hereinafter referred to as irradiation angle θ) (S2), and the intensity of the reflected light L2 at that time is detected by a photodetector. 6 and the signal processing device 8 and the process of recording the detection result in the storage device (hard disk or the like) by the computer 9 (S3) is completed by the computer 9 for setting the irradiation angle θ for a predetermined angle range. Is repeated (S4).
Information representing the correspondence relationship between the irradiation angle θ and the intensity of the reflected light L2, which is a correspondence relationship in which the vertical axis (reflectance) in the graph of FIG. 4 is replaced with the intensity of the reflected light L2 by the processing of steps S2 to S4. (Hereinafter referred to as irradiation angle / reflected light intensity correspondence information) is recorded in the storage means of the computer 9.
Then, the computer 9 determines a set irradiation angle θ _{0 at} which a high measurement sensitivity is obtained based on the irradiation angle / reflected light intensity correspondence information, and further, the computer 9 controls the direction adjusting device 5a to thereby perform irradiation. The angle θ is adjusted to be the determined set irradiation angle θ ₀ (S5).
As described above, the irradiation angle θ of the measurement light L1 with respect to the metal thin film 11 is adjusted by the direction adjusting device 5a and the computer 9 controlling the same based on the detection result of the intensity of the reflected light L by the photodetector 6 ( S2 to S5: an example of measuring light irradiation angle adjusting means).
For example, the irradiation angle θ when the intensity change width of the reflected light L2 with respect to the unit change width of the irradiation angle θ is the largest is the set irradiation angle θ ₀ . Thereby, it can adjust so that the intensity | strength change of the reflected light L2 with respect to the heating state change of the sample 1 may become large, and can ensure a high measurement sensitivity.
The above adjustment process is performed, for example, for each sample 1 to be measured or for each type (material, shape, etc.) of the sample 1.
In addition, after completion of steps S1 to S5, after the post-processing (not shown) (processing for stopping the measuring light laser 4 or the like) is performed, the adjustment process is finished.

<Measurement process: Steps S6 to S11>
After the adjustment process is finished, first, in the measurement process, the measurement light laser 4 starts outputting measurement light with the irradiation angle θ held (fixed) at the set irradiation angle θ ₀ set in step S5. (S6). Thereby, the measurement light L1 is irradiated on the surface of the metal thin film 11, and surface plasmon resonance occurs in the metal thin film 11 (an example of a measurement light irradiation process).
Next, the computer 9 controls the pulse laser 10 to set the output conditions (pulse width, irradiation time, etc.) of the pulsed light L0 (S7) and output the pulsed light under the set conditions (irradiation to the sample 1). (S9) is performed, and the intensity of the reflected light L2 before and after the irradiation of the pulsed light is detected through the photodetector 6 and the signal processing device 8, and the detection result is recorded in the storage device by the computer 9. (S8, S10: An example of a reflected light detection process). At this time, information indicating the correspondence between the output timing of the pulsed light L0 (the time axis of the output state) and the detection timing of the intensity of the reflected light L2 (the time axis of the detected value) and information on the output conditions of the pulsed light are also included. Recorded.
By the process of step S9, an elastic wave is generated in the sample 1 irradiated with the measurement light L1 (an example of an elastic wave generation process).
The processes in steps S7 to S10 are repeated until the computer 9 determines that a predetermined measurement end condition is satisfied (S11). When the measurement end condition is satisfied, post-processing (measurement light laser) (not shown) is performed. The measurement process is finished after the stop process 4) is performed.

By performing the measurement described above, the sample 1 is heated by the elastic wave generated by the irradiation of the pulsed light L0, and the elastic wave propagates to the metal thin film 11, thereby causing surface plasmon resonance of the metal thin film 11. A state changes and the intensity | strength of the reflected light L2 of the measurement light irradiated to the metal thin film 11 changes a lot.
As a result, a minute change in the heating state (thermal characteristics) due to the elastic wave of the sample 1 can be measured with high sensitivity as the intensity change of the reflected light L2. In addition, there is no need for processing for forming the metal thin film 11 for each sample 1 to be measured.
Further, under the situation where surface plasmon resonance occurs, the reflectance of the metal thin film 11 is sensitive to a change in stress (refractive index) at a depth of about several tens of nanometers on the surface layer. The thermoelastic characteristic measuring apparatus X is extremely effective for detecting an elastic wave having an ultrashort wavelength (for example, a wavelength of several tens of nm).
Note that the measurement data obtained by the processing in steps S7 to S10 is analyzed by the computer 9 after the measurement, whereby the thermoelastic characteristics of the sample 1 are evaluated.
For example, the amount of change in the intensity of the reflected light L2 before and after irradiation with the pulsed light L0, the time from when the pulsed light L0 is output until the intensity of the reflected light L2 changes (corresponding to the arrival time of the elastic wave to the sample 1), The frequency characteristic of the intensity of the reflected light L2 is analyzed, and the thermal characteristic of the sample 1 is evaluated based on the analysis result. More specifically, with the thermoelastic property measuring apparatus X, the measurement data of the reference sample whose thermal properties are already known is measured and recorded in accordance with the procedures of steps S1 to S11, the measurement data of the reference sample, The thermal characteristics of the sample 1 are evaluated by comparison with the measurement data of the sample 1 to be measured.

FIG. 1 shows an example in which the pulsed light L0 is irradiated from the back side of the sample 1. However, the present invention is not limited to this.
In FIG. 2, the pulsed light L0 is irradiated on the front surface of the sample 2 (the surface on the side where the metal thin film 11 is disposed) in the vicinity of the irradiation portion of the measurement light L1 with respect to the metal thin film 11, thereby 2 shows a pulsed light irradiation method (first embodiment) for generating an elastic wave. In the first embodiment, a minute hole 11a that allows the pulsed light L0 to pass through is formed in the metal thin film 11, and the pulsed light L0 passes through the prism 3 and is irradiated onto the sample 1.
Further, FIG. 3 shows a pulse in which the pulsed light L0 is irradiated on a part of the front surface of the sample 2 slightly away from the irradiation part of the measuring light L1 on the metal thin film 11, thereby generating an elastic wave in the sample 1. This shows a light irradiation method (second embodiment). In the second embodiment, the influence of the elastic wave (surface wave) generated and propagated mainly on the surface layer of the sample 1 is reflected in the intensity of the reflected light L2, and the thermoelastic characteristics of the surface layer portion of the sample 1 are selectively measured. Is possible.
Employing the pulsed light irradiation method shown in FIGS. 2 and 3 is an example of the embodiment of the present invention.

In the above-described embodiment, the example in which the irradiation angle θ of the measurement light L1 with respect to the sample 1 is adjusted based on the detection result of the reflected light L2 by the photodetector 6 (S2 to S5) has been described. Configuration is also conceivable.
For example, instead of or in addition to the direction adjusting device 5a, a wavelength adjusting device that can adjust the wavelength of the measuring light L1 output from the measuring light laser 4 is provided, and the computer 9 controls the wavelength adjusting device. Therefore, it is also conceivable to adjust the wavelength of the measurement light L1 based on the detection result of the reflected light L2 by the photodetector 6 (an example of measurement light wavelength adjusting means). Note that it is conceivable to adjust one or both of the irradiation angle θ and the wavelength of the measurement light L1 based on the detected intensity of the reflected light L2.
Even with such a configuration, the intensity change of the reflected light L2 with respect to the heating state change of the sample 1 can be adjusted to be large, and high measurement sensitivity can be ensured.

    INDUSTRIAL APPLICABILITY The present invention can be used for a thermoelastic property measuring apparatus or method for measuring the thermal properties of a sample heated by elastic waves.

The figure showing the schematic structure of the thermoelastic property measuring apparatus X which concerns on embodiment of this invention. The figure showing 1st Example of the irradiation system of the pulsed light in the thermoelastic characteristic measuring apparatus X. FIG. The figure showing 2nd Example of the irradiation system of the pulsed light in the thermoelastic characteristic measuring apparatus X. FIG. The graph showing the relationship between the incident angle of the measurement light and the reflectance in the metal thin film in a surface plasmon resonance state. The flowchart showing the measurement procedure by the thermoelastic characteristic measuring apparatus X.

Explanation of symbols

X: Thermoelastic characteristic measuring device 1: Sample 2: Coupling material 3: Prism 4: Measuring light laser 5: Measuring light reflecting mirror 5a: Direction adjusting device 6: Photo detector 7: Lens 8: Signal processing device 9: Computer 10: Pulse laser 11: Metal thin film 12: Pulsed light reflecting mirrors S1, S2,...: Processing procedure (step)

Claims (9)

A thermoelastic property measuring apparatus for measuring a characteristic change when an elastic wave is generated for a predetermined sample,
A metal thin film disposed in a state filled with an elastic wave propagation medium that propagates an elastic wave generated in the sample between the sample and the sample;
Measuring light irradiation means for generating surface plasmon resonance by irradiating the surface of the metal thin film with a predetermined measuring light,
Elastic wave generating means for generating elastic waves in the sample;
Reflected light detection means for detecting the intensity of reflected light of the measurement light with respect to the metal thin film;
A thermoelastic property measuring apparatus comprising:   2. The thermoelastic characteristic measuring apparatus according to claim 1, wherein the elastic wave generating means is means for irradiating the sample with intensity-modulated laser light.   The thermoelastic characteristic measuring apparatus according to claim 2, wherein the elastic wave generating means is means for irradiating the sample with pulse-modulated laser light.   The thermoelastic characteristic measurement according to any one of claims 1 to 3, further comprising measurement light irradiation angle adjusting means for adjusting an irradiation angle of the measurement light to the metal thin film based on a detection result of the reflected light detection means. apparatus.   The thermoelastic characteristic measuring apparatus according to any one of claims 1 to 4, further comprising measurement light wavelength adjusting means for adjusting a wavelength of the measurement light based on a detection result of the reflected light detection means.   The thermoelastic characteristic measuring apparatus according to claim 1, further comprising a metal thin film holding unit that holds the metal thin film while transmitting the measurement light and the reflected light.   The thermoelastic property measuring apparatus according to claim 6, wherein the metal thin film holding means is a prism.   The thermoelastic property measuring apparatus according to claim 1, wherein the elastic wave propagation medium is a liquid or gel-like incompressible fluid. A thermoelastic property measurement method for measuring a property change caused by the generation of elastic waves for a predetermined sample,
Measurement light that causes surface plasmon resonance by irradiating the surface of a metal thin film arranged with an elastic wave propagation medium that propagates elastic waves generated in the sample between the sample and a predetermined measurement light Irradiation process;
An elastic wave generating step for generating an elastic wave in the sample irradiated with the measurement light;
A reflected light detection step of detecting the intensity of reflected light of the measurement light with respect to the metal thin film;
A thermoelastic property measurement method comprising:

Images