JP5600374B2 - Terahertz spectrometer - Google Patents

Terahertz spectrometer Download PDF

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JP5600374B2
JP5600374B2 JP2007329926A JP2007329926A JP5600374B2 JP 5600374 B2 JP5600374 B2 JP 5600374B2 JP 2007329926 A JP2007329926 A JP 2007329926A JP 2007329926 A JP2007329926 A JP 2007329926A JP 5600374 B2 JP5600374 B2 JP 5600374B2
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terahertz
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optical path
path length
hemispherical lens
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JP2009150811A (en
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一城 福島
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Tochigi Nikon Corp
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この発明はテラヘルツ分光装置に関する。   The present invention relates to a terahertz spectrometer.

従来、テラヘルツパルス光（周波数がおおよそ０．１ＴＨｚから１０ＴＨｚまでの範囲の電磁波）を用いた分光装置が知られている。   Conventionally, a spectroscopic device using terahertz pulse light (an electromagnetic wave having a frequency in a range of approximately 0.1 THz to 10 THz) is known.

この種の分光装置として、例えばテラヘルツパルス光を試料に照射してその試料を透過したテラヘルツパルス光の振幅と位相とを検出する透過測定光学系と、テラヘルツパルス光を試料に照射してその試料で反射したテラヘルツパルス光の振幅と位相とを検出する反射測定光学系とを１つの装置として構成したものがある（下記公報参照）。
特開２００４−１９１３０２号公報 As this type of spectroscopic device, for example, a transmission measurement optical system that detects the amplitude and phase of terahertz pulse light that has been irradiated to the sample and transmitted through the sample, and the sample that has been irradiated with terahertz pulse light. The reflection measurement optical system that detects the amplitude and phase of the terahertz pulse light reflected at 1 is configured as one apparatus (see the following publication).
JP 2004-191302 A

ところが、分光装置が設置されている環境の温度変化等によって分光装置内の温度が変化すると、分光装置に使用している光学素子（シリコンレンズ等）の屈折率が変化し、位相情報に誤差が生じるため、高精度の測定ができなくなるという問題があった。   However, when the temperature in the spectroscopic device changes due to a change in the temperature of the environment in which the spectroscopic device is installed, the refractive index of the optical element (silicon lens, etc.) used in the spectroscopic device changes, resulting in an error in phase information. As a result, there is a problem that high-precision measurement cannot be performed.

この発明はこのような事情に鑑みてなされたもので、その課題は設置する環境温度が変化しても高精度の測定を行うことができるテラヘルツ分光装置を提供することである。   The present invention has been made in view of such circumstances, and its object is to provide a terahertz spectrometer capable of performing high-precision measurement even when the installed environmental temperature changes.

上記問題を解決するため請求項１記載の発明は、パルス光を発生するレーザ光源と、前記レーザ光源からのパルス光をポンプ光とプローブ光とに分割するビームスプリッタと、前記パルス光の照射によってテラヘルツパルス光を発生するテラヘルツ光発生器と、前記テラヘルツパルス光を検出するテラヘルツ光検出器と、前記テラヘルツ光発生器及び前記テラヘルツ光検出器の少なくとも一方に配置された半球状レンズと、前記ポンプ光又はプローブ光の光路中に配置された時間遅延装置とを備えたテラヘルツ分光装置において、前記プローブ光は繰返し周期が数十ＭＨｚのパルス光であり、該プローブ光の光路中に、温度変化による光路長の変化を補正するための光路長補正部材が少なくとも１個配置されており、前記半球状レンズの光軸上の長さの合計と、前記光路長補正部材の光軸上の長さの合計とはほぼ同じであり、前記半球状レンズと前記光路長補正部材とは同じ材料からなることを特徴とする。 In order to solve the above-mentioned problem, the invention described in claim 1 includes a laser light source that generates pulsed light, a beam splitter that splits pulsed light from the laser light source into pump light and probe light, and irradiation with the pulsed light. A terahertz light generator that generates terahertz pulse light, a terahertz light detector that detects the terahertz pulse light, a hemispherical lens disposed in at least one of the terahertz light generator and the terahertz light detector, and the pump In the terahertz spectrometer including a time delay device disposed in the optical path of the light or the probe light, the probe light is pulsed light having a repetition period of several tens of MHz, and the probe light is subjected to a temperature change in the optical path. the optical path length correction member for correcting the variation of the optical path length is arranged at least one optical axis of the hemispherical lens The total length of the total length of the optical axis of the optical path length correction member is approximately the same, the hemispherical lens and the optical path length correction member, characterized in that it consists of the same material.

請求項２記載の発明は、請求項１記載のテラヘルツ分光装置において、前記半球状レンズは、前記テラヘルツ光発生器と前記テラヘルツ光検出器との両方にそれぞれ配置されたことを特徴とする。   According to a second aspect of the present invention, in the terahertz spectrometer according to the first aspect, the hemispherical lens is disposed in both the terahertz light generator and the terahertz light detector.

請求項３記載の発明は、請求項１又は２記載のテラヘルツ分光装置において、前記時間遅延装置は、前記プローブ光の光路中に配置されたことを特徴とする。
請求項４記載の発明は、請求項１，２又は３記載のテラヘルツ分光装置において、前記光路長補正部材は、平行平板部材であることを特徴とする。 According to a third aspect of the present invention, in the terahertz spectrometer according to the first or second aspect, the time delay device is arranged in an optical path of the probe light.
According to a fourth aspect of the present invention, in the terahertz spectrometer according to the first, second, or third aspect, the optical path length correction member is a parallel plate member.

請求項５記載の発明は、請求項１〜４のいずれか１項記載のテラヘルツ分光装置において、前記半球状レンズは、超半球レンズであることを特徴とする。 According to a fifth aspect of the present invention, in the terahertz spectrometer according to any one of the first to fourth aspects, the hemispherical lens is a super hemispherical lens.

請求項６記載の発明は、請求項１〜５のいずれか１項記載のテラヘルツ分光装置において、前記半球状レンズと前記光路長補正部材とは、共に単結晶半導体材料からなることを特徴とする。 The invention according to claim 6 is the terahertz spectrometer according to any one of claims 1 to 5 , wherein both the hemispherical lens and the optical path length correcting member are made of a single crystal semiconductor material. .

請求項７記載の発明は、請求項６記載のテラヘルツ分光装置において、前記単結晶半導体材料はシリコン単結晶であることを特徴とする。 According to a seventh aspect of the invention, in the terahertz spectrometer according to the sixth aspect , the single crystal semiconductor material is a silicon single crystal.

この発明によれば、設置する環境温度が変化しても高精度の測定を行うことができる。   According to the present invention, high-precision measurement can be performed even when the environmental temperature to be installed changes.

以下、本発明の実施の形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は本発明の一実施形態に係るテラヘルツ分光装置の構成を模式的に示す全体構成図である。   FIG. 1 is an overall configuration diagram schematically showing the configuration of a terahertz spectrometer according to an embodiment of the present invention.

テラヘルツ分光装置１００は、試料Ｓにテラヘルツパルス光を照射し、試料Ｓを透過したテラヘルツパルス光の電場強度の時間変化データを検出し、このデータに基づいて試料Ｓの複素誘電率や複素屈折率の波長依存性等を求めるものである。   The terahertz spectrometer 100 irradiates the sample S with terahertz pulse light, detects temporal change data of the electric field intensity of the terahertz pulse light transmitted through the sample S, and based on this data, the complex dielectric constant and complex refractive index of the sample S For determining the wavelength dependence and the like.

テラヘルツ分光装置１００は、パルス光Ｐ１を発生するレーザ光源１と、レーザ光源１からのパルス光Ｐ１をポンプ光Ｐ２とプローブ光Ｐ３とに分割するビームスプリッタ２と、ポンプ光Ｐ２の照射によってテラヘルツパルス光Ｔ１を発生させるテラヘルツ光発生器３と、試料Ｓを保持するホルダ６と、試料Ｓを透過したテラヘルツパルス光Ｔ２を検出するテラヘルツ光検出器９とを備える。   The terahertz spectrometer 100 includes a laser light source 1 that generates pulsed light P1, a beam splitter 2 that splits the pulsed light P1 from the laser light source 1 into pump light P2 and probe light P3, and a terahertz pulse by irradiation with the pump light P2. The terahertz light generator 3 that generates the light T1, the holder 6 that holds the sample S, and the terahertz light detector 9 that detects the terahertz pulse light T2 transmitted through the sample S are provided.

また、テラヘルツ分光装置１００は、周知の時系列テラヘルツ光検出法によりテラヘルツパルス光を検出する目的で、テラヘルツ光検出器９へ導かれるプローブ光Ｐ３の到達時間を変更する時間遅延装置１０を備えている。時間遅延装置１０は、可動ミラー１０ａ、固定ミラー１０ｂ，１０ｃ及び駆動部（図示せず）を有する。可動ミラー１０ａは駆動部に固定されている。可動ミラー１０ａは、図１中、Ｍ方向に移動可能である。すなわち、テラヘルツパルス光Ｔ２の電場強度信号を検出するタイミングは、可動ミラー１０ａの移動による光路長の変化によって変更される。   The terahertz spectrometer 100 includes a time delay device 10 that changes the arrival time of the probe light P3 guided to the terahertz light detector 9 for the purpose of detecting terahertz pulse light by a known time-series terahertz light detection method. Yes. The time delay device 10 includes a movable mirror 10a, fixed mirrors 10b and 10c, and a drive unit (not shown). The movable mirror 10a is fixed to the drive unit. The movable mirror 10a is movable in the M direction in FIG. That is, the timing for detecting the electric field intensity signal of the terahertz pulse light T2 is changed by a change in the optical path length due to the movement of the movable mirror 10a.

更に、テラヘルツ分光装置１００は、テラヘルツ光検出器９へ導かれるプローブ光Ｐ３の光路上に、光路長補正部材１１を備える。   Further, the terahertz spectrometer 100 includes an optical path length correction member 11 on the optical path of the probe light P3 guided to the terahertz photodetector 9.

レーザ光源１で発生したパルス光Ｐ１は平面反射ミラーＭ１を経てビームスプリッタ２で２つのパルス光に分割される。レーザ光源１としては、例えばフェムト秒パルスレーザが用いられる。レーザ光源１で発生するパルス光Ｐ１は、中心波長が赤外領域のうちの１５６０ｎｍ程度、繰り返し周期が数十ＭＨｚ、パルス幅が１００ｆｓｅｃ程度のパルス光である。   The pulsed light P1 generated by the laser light source 1 is split into two pulsed lights by the beam splitter 2 through the plane reflection mirror M1. For example, a femtosecond pulse laser is used as the laser light source 1. The pulsed light P1 generated by the laser light source 1 is pulsed light having a center wavelength of about 1560 nm in the infrared region, a repetition period of several tens of MHz, and a pulse width of about 100 fsec.

ビームスプリッタ２で２分割されたパルス光の一方はテラヘルツ光発生器３を励起してテラヘルツパルス光Ｔ１を発生させるためのポンプ光Ｐ２となる。このポンプ光Ｐ２は平面反射ミラーＭ２を介してテラヘルツ光発生器３へ入射する。テラヘルツ光発生器３にポンプ光Ｐ２が入射すると、テラヘルツ光発生器３からテラヘルツパルス光Ｔ１が発生する。テラヘルツ光発生器３は、光スイッチ素子及びバイアス回路を有する公知の装置である。テラヘルツ光発生器３から発生するテラヘルツパルス光Ｔ１は、概ね０．１×１０12〜１０×１０12Ｈｚ（０．１〜１０ＴＨｚ）の周波数領域の電磁波である。テラヘルツパルス光Ｔ１は、第１のテラヘルツ光学系５を介して収束し、試料ホルダ６に保持された試料Ｓに導かれる。第１のテラヘルツ光学系５は例えば楕円面ミラーである。 One of the pulse lights divided into two by the beam splitter 2 becomes pump light P2 for exciting the terahertz light generator 3 to generate terahertz pulse light T1. The pump light P2 is incident on the terahertz light generator 3 through the plane reflection mirror M2. When the pump light P <b> 2 is incident on the terahertz light generator 3, terahertz pulse light T <b> 1 is generated from the terahertz light generator 3. The terahertz light generator 3 is a known device having an optical switch element and a bias circuit. The terahertz pulse light T1 generated from the terahertz light generator 3 is an electromagnetic wave in a frequency region of approximately 0.1 × 10 12 to 10 × 10 12 Hz (0.1 to 10 THz). The terahertz pulsed light T1 is converged via the first terahertz optical system 5 and guided to the sample S held by the sample holder 6. The first terahertz optical system 5 is, for example, an ellipsoidal mirror.

試料Ｓを透過したテラヘルツパルス光Ｔ２は、試料Ｓの透過領域の物性情報を含む光である。テラヘルツパルス光Ｔ２は、第２のテラヘルツ光学系７を介して収束し、テラヘルツ光検出器９に導かれる。第２のテラヘルツ光学系５は例えば楕円面ミラーである。   The terahertz pulsed light T2 that has passed through the sample S is light including physical property information of the transmission region of the sample S. The terahertz pulsed light T2 is converged via the second terahertz optical system 7 and guided to the terahertz light detector 9. The second terahertz optical system 5 is, for example, an ellipsoidal mirror.

ビームスプリッタ２で２分割されたパルス光の他方は、テラヘルツパルス光Ｔ２を検出するためのプローブ光Ｐ３となる。プローブ光Ｐ３は、時間遅延装置１０、固定ミラー１０ｂ、可動ミラー１０ａ及び固定ミラー１０ｃを順次経由し、更に、平面反射ミラーＭ３、光路長補正部材１１、平面反射ミラーＭ４を経てテラヘルツ光検出器９に入射する。テラヘルツ光検出器９は、光スイッチ素子及びＩ／Ｖ変換回路を有する公知の装置である。テラヘルツ光検出器９にプローブ光Ｐ３が入射すると、テラヘルツ光検出器９により、プローブ光Ｐ３が照射された時点での試料Ｓを透過したテラヘルツパルス光Ｔ２の電場強度に応じた電流が検出される。検出された電流には、試料Ｓの物性情報が含まれている。検出された電流は、アンプ（図示せず）により増幅され、演算装置（図示せず）によりフーリエ変換される。最終的に得られた試料Ｓの物性情報はディスプレイ（図示せず）に表示される。   The other of the pulse lights divided into two by the beam splitter 2 becomes probe light P3 for detecting the terahertz pulse light T2. The probe light P3 sequentially passes through the time delay device 10, the fixed mirror 10b, the movable mirror 10a, and the fixed mirror 10c, and further passes through the plane reflection mirror M3, the optical path length correction member 11, and the plane reflection mirror M4, and the terahertz light detector 9. Is incident on. The terahertz light detector 9 is a known device having an optical switch element and an I / V conversion circuit. When the probe light P3 is incident on the terahertz light detector 9, the terahertz light detector 9 detects a current corresponding to the electric field intensity of the terahertz pulse light T2 that has passed through the sample S when the probe light P3 is irradiated. . The detected current includes physical property information of the sample S. The detected current is amplified by an amplifier (not shown) and subjected to Fourier transform by an arithmetic unit (not shown). The physical property information of the sample S finally obtained is displayed on a display (not shown).

テラヘルツ光発生器３及びテラヘルツ光検出器９の両方には、半球シリコンレンズ（半球状レンズ）４，８が、試料Ｓ側に凸となるように配置されている。半球シリコンレンズ４，８は、例えばシリコン単結晶（単結晶半導体材料）からなる。半球シリコンレンズ４，８をテラヘルツパルス光Ｔ１，Ｔ２が経由することで、テラヘルツパルス光Ｔ１，Ｔ２の利用効率が高まる。なお、半球状レンズとして、半球シリコンレンズ４，８を用いる代わりに超半球シリコンレンズを用いてもよい。超半シリコンレンズを用いた場合には、半球シリコンレンズ４，８を用いた場合に比べて、利用効率が更に高まる。   In both the terahertz light generator 3 and the terahertz light detector 9, hemispherical silicon lenses (hemispherical lenses) 4 and 8 are arranged so as to be convex toward the sample S side. The hemispherical silicon lenses 4 and 8 are made of, for example, silicon single crystal (single crystal semiconductor material). As the terahertz pulse lights T1 and T2 pass through the hemispherical silicon lenses 4 and 8, the utilization efficiency of the terahertz pulse lights T1 and T2 is increased. As the hemispherical lens, a super hemispherical silicon lens may be used instead of the hemispherical silicon lenses 4 and 8. When the super-half silicon lens is used, the utilization efficiency is further increased as compared with the case where the hemispherical silicon lenses 4 and 8 are used.

また、テラヘルツ光発生器３及びテラヘルツ光検出器９の両方に半球シリコンレンズを配置する必要はない。なお、半球シリコンレンズの材料はシリコン単結晶に限られるものではなく、他の単結晶半導体材料であってもよい。   Moreover, it is not necessary to arrange hemispherical silicon lenses in both the terahertz light generator 3 and the terahertz light detector 9. The material of the hemispherical silicon lens is not limited to a silicon single crystal, and may be another single crystal semiconductor material.

次に、光路長補正部材１１について詳しく説明する。   Next, the optical path length correction member 11 will be described in detail.

光路長補正部材１１はプローブ光Ｐ３の光路上に配置されている。光路長補正部材１１は、例えば上面と下面とが平行な平行平板部材である。光路長補正部材１１の材料は半球シリコンレンズ４，８の材料と同一（例えばシリコン単結晶）であることが望ましい。また、光路長補正部材１１の光路長は、半球シリコンレンズ４，８の光路長の合計とほぼ等しくすることが望ましい。   The optical path length correction member 11 is disposed on the optical path of the probe light P3. The optical path length correction member 11 is, for example, a parallel plate member whose upper surface and lower surface are parallel. The material of the optical path length correcting member 11 is desirably the same as that of the hemispherical silicon lenses 4 and 8 (for example, silicon single crystal). Further, it is desirable that the optical path length of the optical path length correction member 11 is substantially equal to the total optical path length of the hemispherical silicon lenses 4 and 8.

半球シリコンレンズ４，８に使用されているシリコン単結晶の屈折率は、波長１５６０ｎｍの赤外領域、及びテラヘルツ光に対して、温度が１℃上昇する毎に約１．９×１０-4増加する。半球シリコンレンズ４，８の光軸に沿った厚さがそれぞれ１０ｍｍの場合、半球シリコンレンズ４，８の温度が共に１℃上昇すると、半球シリコンレンズ４，８のそれぞれの光路長は１．９μｍ増加することになる。すなわち、半球シリコンレンズ４と半球シリコンレンズ８とで光路長が合計３．８μｍ増加するので、ビームスプリッタ２から試料Ｓを経てテラヘルツ光検出器９に達する光路長Ｌ１が３．８μｍ増加する。 The refractive index of the silicon single crystal used for the hemispherical silicon lenses 4 and 8 increases by about 1.9 × 10 −4 every time the temperature rises by 1 ° C. with respect to the infrared region of 1560 nm wavelength and terahertz light. To do. When the thickness of the hemispherical silicon lenses 4 and 8 along the optical axis is 10 mm, respectively, when the temperature of the hemispherical silicon lenses 4 and 8 rises by 1 ° C., the respective optical path lengths of the hemispherical silicon lenses 4 and 8 are 1.9 μm. Will increase. That is, the total optical path length of the hemispherical silicon lens 4 and the hemispherical silicon lens 8 is increased by 3.8 μm, so that the optical path length L1 reaching the terahertz photodetector 9 from the beam splitter 2 through the sample S is increased by 3.8 μm.

そこで、光路長補正部材１１としてシリコン単結晶からなる厚さ２０ｍｍの平行平板部材をプローブ光Ｐ３の光路上に配置する。光路長補正部材１１の温度が１℃上昇すると、光路長補正部材１１の光路長が３．８μｍ増加する。すなわち、ビームスプリッタ２から光路長補正部材１１を経てテラヘルツ光検出器９に達する光路長Ｌ２が３．８μｍ増加する。   Therefore, a parallel plate member made of silicon single crystal and having a thickness of 20 mm is disposed on the optical path of the probe light P3 as the optical path length correcting member 11. When the temperature of the optical path length correction member 11 increases by 1 ° C., the optical path length of the optical path length correction member 11 increases by 3.8 μm. That is, the optical path length L2 reaching the terahertz photodetector 9 from the beam splitter 2 through the optical path length correcting member 11 is increased by 3.8 μm.

上記したように、温度変化による光路長Ｌ１と光路長Ｌ２との増加量は等しいので、光路長Ｌ１と光路長Ｌ２との差に変化は生じない。したがって、テラヘルツ分光装置１００内の温度変化により光路長が変化しても、テラヘルツ光検出器９に対して、テラヘルツパルス光Ｔ２が入射するタイミングとプローブ光Ｐ３が入射するタイミングとがずれることがない。   As described above, since the increase amounts of the optical path length L1 and the optical path length L2 due to the temperature change are equal, the difference between the optical path length L1 and the optical path length L2 does not change. Therefore, even when the optical path length changes due to a temperature change in the terahertz spectrometer 100, the timing at which the terahertz pulse light T2 enters the terahertz light detector 9 does not deviate from the timing at which the probe light P3 enters. .

この実施形態によれば、プローブ光Ｐ３の光路中に配置された光路長補正部材１１によって半球シリコンレンズ４，８の屈折率の温度変化による光路長の変化を吸収することができるので、環境温度が変化しても高精度の測定を行うことができる。   According to this embodiment, since the optical path length correction member 11 disposed in the optical path of the probe light P3 can absorb the change in the optical path length due to the temperature change in the refractive index of the hemispherical silicon lenses 4 and 8, the environmental temperature Even if changes, high-precision measurement can be performed.

なお、光路長補正部材１１はポンプ光Ｐ２の光路中に配置してもよい。   The optical path length correcting member 11 may be disposed in the optical path of the pump light P2.

図１は本発明の一実施形態に係るテラヘルツ分光装置の構成を模式的に示す全体構成図である。FIG. 1 is an overall configuration diagram schematically showing the configuration of a terahertz spectrometer according to an embodiment of the present invention.

符号の説明Explanation of symbols

１：レーザ光源、２：ビームスプリッタ、３：テラヘルツ光発生器、４，８：半球シリコンレンズ（半球状レンズ）、９：テラヘルツ光検出器、１０：時間遅延装置、１１：光路長補正部材、Ｐ１：パルス光、Ｐ２：ポンプ光、Ｐ３：プローブ光。   1: laser light source, 2: beam splitter, 3: terahertz light generator, 4, 8: hemispherical silicon lens (hemispherical lens), 9: terahertz light detector, 10: time delay device, 11: optical path length correction member, P1: Pulse light, P2: Pump light, P3: Probe light.

Claims (7)

パルス光を発生するレーザ光源と、
前記レーザ光源からのパルス光をポンプ光とプローブ光とに分割するビームスプリッタと、
前記パルス光の照射によってテラヘルツパルス光を発生するテラヘルツ光発生器と、
前記テラヘルツパルス光を検出するテラヘルツ光検出器と、
前記テラヘルツ光発生器及び前記テラヘルツ光検出器の少なくとも一方に配置された半球状レンズと、
前記ポンプ光又はプローブ光の光路中に配置された時間遅延装置と
を備えたテラヘルツ分光装置において、
前記プローブ光は繰返し周期が数十ＭＨｚのパルス光であり、該プローブ光の光路中に、温度変化による光路長の変化を補正するための光路長補正部材が少なくとも１個配置されており、
前記半球状レンズの光軸上の長さの合計と、前記光路長補正部材の光軸上の長さの合計とはほぼ同じであり、前記半球状レンズと前記光路長補正部材とは同じ材料からなることを特徴とするテラヘルツ分光装置。 A laser light source for generating pulsed light;
A beam splitter that splits the pulsed light from the laser light source into pump light and probe light;
A terahertz light generator that generates terahertz pulsed light by irradiation with the pulsed light; and
A terahertz light detector for detecting the terahertz pulse light;
A hemispherical lens disposed on at least one of the terahertz light generator and the terahertz light detector;
A terahertz spectrometer comprising a time delay device arranged in the optical path of the pump light or the probe light,
The probe light is pulsed light having a repetition period of several tens of MHz, and at least one optical path length correction member for correcting a change in optical path length due to a temperature change is disposed in the optical path of the probe light ,
The total length of the hemispherical lens on the optical axis and the total length of the optical path length correcting member on the optical axis are substantially the same, and the hemispherical lens and the optical path length correcting member are the same material. terahertz spectrometer characterized by comprising a. 前記半球状レンズは、前記テラヘルツ光発生器と前記テラヘルツ光検出器との両方にそれぞれ配置されたことを特徴とする請求項１記載のテラヘルツ分光装置。   The terahertz spectrometer according to claim 1, wherein the hemispherical lens is disposed in both the terahertz light generator and the terahertz light detector. 前記時間遅延装置は、前記プローブ光の光路中に配置されたことを特徴とする請求項１又は２記載のテラヘルツ分光装置。   The terahertz spectrometer according to claim 1, wherein the time delay device is disposed in an optical path of the probe light. 前記光路長補正部材は、平行平板部材であることを特徴とする請求項１，２又は３記載のテラヘルツ分光装置。   The terahertz spectrometer according to claim 1, wherein the optical path length correcting member is a parallel plate member. 前記半球状レンズは、超半球レンズであることを特徴とする請求項１〜４のいずれか１項記載のテラヘルツ分光装置。   The terahertz spectrometer according to claim 1, wherein the hemispherical lens is a super hemispherical lens. 前記半球状レンズと前記光路長補正部材とは、共に単結晶半導体材料からなることを特徴とする請求項１〜５のいずれか１項記載のテラヘルツ分光装置。 Wherein the hemispherical lens and the optical path length correction member, terahertz spectrometer according to any one of claims 1-5, characterized in that both of monocrystalline semiconductor material. 前記単結晶半導体材料はシリコン単結晶であることを特徴とする請求項６記載のテラヘルツ分光装置。 The terahertz spectrometer according to claim 6, wherein the single crystal semiconductor material is a silicon single crystal.
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