JP2007160451A - 研磨方法、この研磨方法を用いた半導体デバイスの製造方法及びこの半導体デバイスの製造方法により製造された半導体デバイス - Google Patents
研磨方法、この研磨方法を用いた半導体デバイスの製造方法及びこの半導体デバイスの製造方法により製造された半導体デバイス Download PDFInfo
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- JP2007160451A JP2007160451A JP2005358635A JP2005358635A JP2007160451A JP 2007160451 A JP2007160451 A JP 2007160451A JP 2005358635 A JP2005358635 A JP 2005358635A JP 2005358635 A JP2005358635 A JP 2005358635A JP 2007160451 A JP2007160451 A JP 2007160451A
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Abstract
【解決手段】基板50を基板保持台4に保持し、基板保持台4に対向させて設置した研磨工具10を基板50に接触させるとともに基板保持台4及び研磨工具10を相対移動させて基板50の表面51の研磨を行う研磨方法において、予め取得した、基板保持台4の温度と研磨継続時間に対する研磨速度の変化率との関係を示すデータに基づいて基板保持台4の温度を選択し、基板保持台4の温度をその選択した温度に保持した状態で基板50の表面51の研磨を行う。
【選択図】図3
Description
4 基板保持台
7 冷却液流路
10 研磨工具
11 研磨パッド
25 冷却液供給装置
50 基板
51 基板の表面
Claims (5)
- 基板を基板保持台に保持し、前記基板保持台に対向させて設置した研磨工具を前記基板に接触させるとともに前記基板保持台及び前記研磨工具を相対移動させて前記基板の表面の研磨を行う研磨方法において、
予め取得した、前記基板保持台の温度と研磨継続時間に対する研磨速度の変化率との関係を示すデータに基づいて前記基板保持台の温度を選択し、前記基板保持台の温度をその選択した温度に保持した状態で前記基板の表面の研磨を行うことを特徴とする研磨方法。 - 前記基板保持台の温度の調節は、前記基板保持台の内部に形成された液体流路に温度調節を施した液体を供給することによって行われることを特徴とする請求項1に記載の研磨方法。
- 前記選択した前記基板保持台の温度は、前記研磨継続時間に対する研磨速度の変化率が所定の範囲内になる温度であることを特徴とする請求項1又は2に記載の研磨方法。
- 前記基板が半導体ウエハであり、請求項1から3のいずれか一項に記載の研磨方法を用いて前記半導体ウエハの表面を平坦化する工程を有したことを特徴とする半導体デバイス製造方法。
- 請求項4に記載の半導体デバイス製造方法により製造されたことを特徴とする半導体デバイス。
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JP2007160451A true JP2007160451A (ja) | 2007-06-28 |
JP4849312B2 JP4849312B2 (ja) | 2012-01-11 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0929591A (ja) * | 1995-07-24 | 1997-02-04 | Sony Corp | 基板研磨装置 |
JP2003275948A (ja) * | 2002-03-22 | 2003-09-30 | Mitsubishi Electric Corp | 半導体基板の研磨装置 |
JP2004358637A (ja) * | 2003-06-06 | 2004-12-24 | Nikon Corp | 加工室の換気構造、研磨装置、半導体デバイス製造方法、及び半導体デバイス |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0929591A (ja) * | 1995-07-24 | 1997-02-04 | Sony Corp | 基板研磨装置 |
JP2003275948A (ja) * | 2002-03-22 | 2003-09-30 | Mitsubishi Electric Corp | 半導体基板の研磨装置 |
JP2004358637A (ja) * | 2003-06-06 | 2004-12-24 | Nikon Corp | 加工室の換気構造、研磨装置、半導体デバイス製造方法、及び半導体デバイス |
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