JP2007158355A - 半導体レーザ部を有する相変化メモリ素子 - Google Patents
半導体レーザ部を有する相変化メモリ素子 Download PDFInfo
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- JP2007158355A JP2007158355A JP2006332623A JP2006332623A JP2007158355A JP 2007158355 A JP2007158355 A JP 2007158355A JP 2006332623 A JP2006332623 A JP 2006332623A JP 2006332623 A JP2006332623 A JP 2006332623A JP 2007158355 A JP2007158355 A JP 2007158355A
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- laser beam
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000010410 layer Substances 0.000 claims description 90
- 239000000758 substrate Substances 0.000 claims description 53
- 239000011241 protective layer Substances 0.000 claims description 20
- 230000000903 blocking effect Effects 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 18
- 239000013078 crystal Substances 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】相変化層パターンを備える相変化メモリ部と、相変化メモリ部の相変化層パターンにレーザビームを局部的に集束するレーザビーム集束部と、レーザビームを発生させてレーザビーム集束部にレーザビームを放出する半導体レーザ部と、を備える相変化メモリ素子である。これにより、本発明の相変化メモリ素子は、セット及びリセット動作時に局部的に印加されるレーザビームを利用するので、消費電力を低減しつつも、単位セルの動作時に発生した熱が隣接セルに影響を与えて隣接のメモリセルに保存された情報を破壊または変更させない。
【選択図】図1
Description
12:絶縁層
14:電極
18a:相変化層パターン
20a:相変化保護層パターン
22:レーザビーム遮断パターン
24:レーザビーム窓
30:第2基板
36:内部ホール
38:マイクロプローブ
39:コンタクトパッド
40:保護層パターン
50:第3基板
52,56:共振ミラー
54:アクティブ領域
58:半導体層
60:レーザビーム制御パターン
62:接続板
80:レーザビーム
100:相変化メモリ部
200:レーザビーム集束部
300:半導体レーザ部
Claims (10)
- 相変化層パターンを備える相変化メモリ部と、
前記相変化メモリ部の相変化層パターンにレーザビームを局部的に集束するレーザビーム集束部と、
前記レーザビームを発生させて前記レーザビーム集束部に前記レーザビームを放出する半導体レーザ部と、を備えることを特徴とする相変化メモリ素子。 - 前記相変化メモリ部、レーザビーム集束部及び半導体レーザ部は、順次に積層及び接合して構成されることを特徴とする請求項1に記載の相変化メモリ素子。
- 前記相変化層パターン上には、レーザビームを局部的に入射させうるレーザビーム窓を有するレーザビーム遮断パターンが形成されていることを特徴とする請求項1に記載の相変化メモリ素子。
- 前記レーザビーム集束部は、前記相変化層パターンにレーザビームを局部的に集束させうるマイクロプローブを備えることを特徴とする請求項1に記載の相変化メモリ素子。
- 前記半導体レーザ部は、放出されるレーザビームの形態を調節できるレーザビーム制御パターンを備えることを特徴とする請求項1に記載の相変化メモリ素子。
- 第1基板上にコンタクトホールを有するように形成された電極と、
前記コンタクトホールに形成されて前記電極と連結された相変化層パターンと、
前記相変化層パターン及び電極上に形成され、前記相変化層パターンにレーザビームを局部的に入射させうるレーザビーム窓を有するレーザビーム遮断パターンと、
前記レーザビーム遮断パターンの両端部に支持及び接合され、前記レーザビーム窓を通じて前記レーザビームを入射させるマイクロプローブを備える第2基板と、
前記第2基板の背面上に支持及び接合され、レーザビームを発生させてレーザビーム制御パターンを通じて前記マイクロプローブに局部的にレーザビームを放出させうる半導体レーザを備える第3基板と、を備えることを特徴とする相変化メモリ素子。 - 前記マイクロプローブを備える第2基板と前記半導体レーザを備える第3基板との間には、前記レーザビーム制御パターンを露出し、前記マイクロプローブに対応する部分に接続板が設置されていることを特徴とする請求項6に記載の相変化メモリ素子。
- 前記第2基板の内部には、内部ホールが形成されており、前記内部ホールの中間には、突出して前記マイクロプローブが形成されており、前記内部ホールの両端部には、コンタクトパッドが形成されていることを特徴とする請求項6に記載の相変化メモリ素子。
- 前記コンタクトパッド上には、前記相変化層パターンを備える第1基板とマイクロプローブを備える第2基板との間隔を調節できる保護層パターンがさらに形成されていることを特徴とする請求項8に記載の相変化メモリ素子。
- 前記半導体レーザは、前記第3基板上に形成されたアクティブ領域、前記アクティブ領域の上下部に位置する第1共振ミラー及び第2共振ミラーで構成され、前記第2共振ミラー上には、前記レーザビーム制御パターンが形成されていることを特徴とする請求項6に記載の相変化メモリ素子。
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KR20050120100 | 2005-12-08 | ||
KR1020060085826A KR100753842B1 (ko) | 2005-12-08 | 2006-09-06 | 반도체 레이저부를 갖는 상변화 메모리 소자 |
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JP2007158355A true JP2007158355A (ja) | 2007-06-21 |
JP4417370B2 JP4417370B2 (ja) | 2010-02-17 |
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US (1) | US7417891B2 (ja) |
JP (1) | JP4417370B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10783966B2 (en) | 2015-03-28 | 2020-09-22 | Intel Corporation | Multistage set procedure for phase change memory |
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Publication number | Priority date | Publication date | Assignee | Title |
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US8111546B2 (en) * | 2008-11-13 | 2012-02-07 | Ovonyx, Inc. | Optical ovonic threshold switch |
GB2562185B (en) | 2014-04-14 | 2019-02-27 | Pragmatic Printing Ltd | Method of Storing and Reading Data and Data Storage System |
GB201813748D0 (en) | 2018-08-23 | 2018-10-10 | Univ Hull | Optically switchable memory |
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US5831960A (en) * | 1997-07-17 | 1998-11-03 | Motorola, Inc. | Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication |
US6834027B1 (en) * | 2000-02-28 | 2004-12-21 | Nec Laboratories America, Inc. | Surface plasmon-enhanced read/write heads for optical data storage media |
JP3842059B2 (ja) | 2001-03-19 | 2006-11-08 | 日本電信電話株式会社 | 光記録媒体およびその処理装置ならびに処理方法 |
KR100494561B1 (ko) | 2002-11-25 | 2005-06-13 | 한국전자통신연구원 | 스위칭 소자 및 이를 구비하는 전자 회로 장치 |
KR100733147B1 (ko) | 2004-02-25 | 2007-06-27 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US10783966B2 (en) | 2015-03-28 | 2020-09-22 | Intel Corporation | Multistage set procedure for phase change memory |
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Publication number | Publication date |
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US7417891B2 (en) | 2008-08-26 |
JP4417370B2 (ja) | 2010-02-17 |
US20070133272A1 (en) | 2007-06-14 |
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