JP2007150083A5 - - Google Patents
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- Publication number
- JP2007150083A5 JP2007150083A5 JP2005344208A JP2005344208A JP2007150083A5 JP 2007150083 A5 JP2007150083 A5 JP 2007150083A5 JP 2005344208 A JP2005344208 A JP 2005344208A JP 2005344208 A JP2005344208 A JP 2005344208A JP 2007150083 A5 JP2007150083 A5 JP 2007150083A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- hole
- semiconductor device
- forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 claims description 66
- 239000011229 interlayer Substances 0.000 claims description 41
- 238000004519 manufacturing process Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 25
- 239000010410 layer Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 11
- 239000010937 tungsten Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005344208A JP2007150083A (ja) | 2005-11-29 | 2005-11-29 | 半導体装置の製造方法 |
| US11/604,727 US20070123032A1 (en) | 2005-11-29 | 2006-11-28 | Method for manufacturing a semiconductor device having a stepped through-hole |
| US12/533,375 US20090286396A1 (en) | 2005-11-29 | 2009-07-31 | Method for manufacturing a semiconductor device having a stepped through-hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005344208A JP2007150083A (ja) | 2005-11-29 | 2005-11-29 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007150083A JP2007150083A (ja) | 2007-06-14 |
| JP2007150083A5 true JP2007150083A5 (zh) | 2007-07-26 |
Family
ID=38088083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005344208A Abandoned JP2007150083A (ja) | 2005-11-29 | 2005-11-29 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20070123032A1 (zh) |
| JP (1) | JP2007150083A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7936001B2 (en) * | 2006-09-07 | 2011-05-03 | Renesas Electronics Corporation | Semiconductor device |
| JP2009105279A (ja) * | 2007-10-24 | 2009-05-14 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法及び半導体装置 |
| KR20110136473A (ko) * | 2010-06-15 | 2011-12-21 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP2015002191A (ja) | 2013-06-13 | 2015-01-05 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及びその製造方法 |
| US9905509B2 (en) * | 2014-07-25 | 2018-02-27 | Macronix International Co., Ltd. | Inverted-T shaped via for reducing adverse stress-migration effects |
| JP7370926B2 (ja) * | 2020-04-24 | 2023-10-30 | 新光電気工業株式会社 | 端子構造、配線基板及び端子構造の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5723380A (en) * | 1996-03-25 | 1998-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of approach to improve metal lithography and via-plug integration |
| KR100268427B1 (ko) * | 1998-08-10 | 2000-10-16 | 윤종용 | 반도체 장치의 콘택 형성 방법 |
| US6190962B1 (en) * | 1999-12-20 | 2001-02-20 | United Microelectronics Corp. | Method of fabricating capacitor |
| JP4883836B2 (ja) * | 2000-12-27 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US6977219B2 (en) * | 2003-12-30 | 2005-12-20 | Intel Corporation | Solvent vapor-assisted plasticization of photoresist films to achieve critical dimension reduction during temperature reflow |
| JP4443379B2 (ja) * | 2004-10-26 | 2010-03-31 | 三洋電機株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-11-29 JP JP2005344208A patent/JP2007150083A/ja not_active Abandoned
-
2006
- 2006-11-28 US US11/604,727 patent/US20070123032A1/en not_active Abandoned
-
2009
- 2009-07-31 US US12/533,375 patent/US20090286396A1/en not_active Abandoned
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