JP2007149978A - Semiconductor laser package device, and method of manufacturing same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser package device which has an excellent bonding strength in a package and a high reliability, does not affect an optical system adversely, and can suppress a facilities cost; and to provide a method of manufacturing the same. <P>SOLUTION: An electrode sheet 24 of a three-layer structure in which an insulating layer 18 is sandwiched between a cathode electrode 16 and a metal foil 20, and the metal foil 20 of a lower layer of the electrode sheet 24, is bonded to an anode electrode 12 of a heat sink by a laser welding from a welding hole 26 in an upper surface of the electrode sheet 24. Consequently, the cathode electrode 16 is attached onto the anode electrode 12. An anode terminal on a lower surface of an LDA chip 14 is connected to the upper surface of the anode electrode 12 by direct contact. A cathode terminal on an upper surface of the LDA chip 14 is electrically connected to the cathode electrode 16 through a plurality of bonding wires 22. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor laser packaging apparatus and a method for manufacturing the same, and more particularly to packaging for mounting a bare chip of a semiconductor laser on an external electrode.

  A high power array type semiconductor laser (LDA) is formed by arranging a large number of current injection type semiconductor lasers or laser diodes (LD) on one chip (semiconductor element), and has a peak of several tens of watts or more per chip. For example, in the field of laser processing, it is widely used as an excitation light source for exciting an active medium of a solid-state laser oscillator, or as a laser oscillation device that oscillates and outputs a processing laser beam.

  FIG. 13 shows the structure of a conventional LDA package. In this LDA package 100, an LDA chip 104 is mounted in a bare state on one end portion of the upper surface of a block-shaped anode electrode 102 that also serves as a heat sink, and a cathode electrode 106 is also separated from the LDA chip 104 through an insulating layer 108. Attached to the upper surface of 102. Here, the lower surface of the LDA chip 104 constitutes an anode terminal, and is connected directly to the upper surface of the anode electrode 102 (for example, by soldering). The upper surface of the LDA chip 104 constitutes a cathode terminal and is electrically connected to the cathode electrode 106 through the bonding wire 110. The cathode electrode 106 and the insulating layer 108 are prepared as an electrode sheet having a two-layer structure bonded together in advance. The lower surface of the electrode sheet, that is, the lower surface of the insulating layer 108 is bonded to the upper surface of the anode electrode 102 with an adhesive or heat seal. Used to fix.

  However, in the conventional LDA packaging, the mounting method in which the cathode electrode 106 is fixed to the anode electrode 102 via the insulating layer 108 using an adhesive or heat seal as described above has poor mounting (bonding) strength. The joining of the insulating layer 108 and the anode electrode 102 gives a considerable stress to the latter (102), and the LDA chip 104 may be displaced by the stress, which is not reliable and has the following problems.

  That is, in the bonding method using an adhesive, there is a risk that an organic solvent gas generated from the adhesive adversely affects the optical system, and there is also a risk of environmental pollution.

  Moreover, the joining method using heat sealing is a method in which the resin is thermally welded by heating at a high temperature (for example, 400 ° C. or more) from the anode electrode 102 side having a large heat capacity that also serves as a heat sink, and the processing time is long. Requires extensive processing equipment.

  The present invention has been made in view of the circumstances as described above. A semiconductor laser having high bonding strength in a package, high reliability, no adverse effects on an optical system, low equipment cost, and clean environment. It is an object of the present invention to provide a packaging device and a manufacturing method thereof.

  In order to achieve the above object, a semiconductor laser package device according to the present invention includes a first electrode, a semiconductor laser chip mounted so that one terminal is connected to an upper surface of the first electrode, A metal layer provided on the upper surface of one electrode, an insulating layer having a first through hole fixed on the metal layer, and the first through hole fixed on the insulating layer overlap. A second electrode having a second through hole; a conductor for electrically connecting the other terminal of the semiconductor laser chip and the second electrode; and the metal layer includes the first and second electrodes. It is joined to the first electrode by laser welding using laser light irradiated through the second through hole.

  In the above configuration, the metal layer is joined to the first electrode by laser welding, whereby the second electrode is attached and fixed onto the first electrode via the insulating layer and the metal layer. Since the joining is performed by laser welding, the mounting strength is high, the stress applied to the semiconductor laser chip is small, and there is no impurity such as an adhesive, so that the reliability and performance can be improved.

  In the stacked semiconductor laser package of the present invention, the semiconductor laser chip in the semiconductor laser package apparatus of the present invention is configured by a one-dimensional semiconductor laser array, and the semiconductor laser package apparatus is connected to the second electrode on the lower stage side and the second one on the upper stage side. A two-dimensional semiconductor laser array is formed by stacking a plurality of layers through conductive spacer members so that one electrode is electrically connected. Since the processing accuracy of the semiconductor laser package device of the present invention is high, it is particularly advantageous for stack type applications.

  In the method of manufacturing a semiconductor laser package device according to the present invention, one terminal of the semiconductor laser chip is connected to the upper surface of the first electrode, and the second electrode is fixed via an insulating layer. A method of manufacturing a semiconductor laser package device in which a terminal of the first electrode and the second electrode are electrically connected via a conductor, wherein the second electrode and a metal foil are respectively attached to an upper surface and a lower surface of the insulating layer. In addition, a step of forming an electrode sheet having a three-layer structure, and a step of forming one or a plurality of bottomed welding holes in which the metal foil is exposed on the bottom surface in the second electrode and the insulating layer And placing the electrode sheet in a state in which the metal foil is in contact with the upper surface of the first electrode, and irradiating a laser beam toward each of the welding holes, The first electrode And a step of joining by laser welding.

  In the above method, an electrode sheet having a three-layer structure in which an insulating layer is sandwiched between the second electrode and the metal foil is formed, and the metal foil and the first electrode under the electrode sheet are used for welding the upper surface of the electrode sheet. Since it is joined by laser welding from the hole, the processing time for mounting the second electrode on the first electrode is extremely short, and the heat input is limited to the welded (joined) part, and there is little thermal influence on the periphery. The stress or strain is very small. For this reason, the mounting accuracy of the semiconductor laser chip mounted on the first electrode is not affected. Further, it does not generate an organic solvent gas unlike an adhesive, and a clean bond free from environmental pollution can be obtained.

  According to a preferred aspect of the present invention, through holes are formed in the second electrode and the insulating layer corresponding to the positions of the welding holes, and the second electrode and the metal foil are pasted on both surfaces of the insulating layer. At the time of matching, the through hole of the second electrode and the through hole of the insulating layer are overlapped to form a welding hole. In this case, a special drilling process is not required.

  In a preferred aspect of the present invention, both the first electrode and the metal foil are made of a copper-based metal, and the laser beam is a YAG harmonic laser beam. Particularly preferably, the metal foil and the first electrode are made of rolled copper, and the metal foil is further subjected to gold plating. Copper-based metals not only have high conductivity but also absorb laser energy of YAG harmonics with high absorptance, so physical contact is made between the metal foil and the first electrode at a limited location within the welding hole. In addition, a highly reliable joint can be obtained electrically. Further, since the gold-based metal also absorbs the laser energy of the YAG harmonic with a high absorption rate, the gold plating of the metal foil can also contribute to the welding joint.

  In a preferred embodiment of the present invention, the insulating layer is made of a polyimide-based film, and the second electrode is made of a copper-based metal, preferably gold-plated rolled copper. These materials in the insulating layer and the second electrode are not only advantageous in terms of insulating characteristics and electrical characteristics, but also laminating techniques similar to those used in the production of flexible wiring boards (copper-clad boards). Can be suitably used, and an electrode sheet having a three-layer structure can be produced at low cost.

  In the suitable one aspect | mode of this invention, the hole for welding is provided in the vicinity of the one end part facing the semiconductor laser chip of an electrode sheet. Thus, by providing the welding hole in the vicinity of the bonding position set for the second electrode on the upper layer of the electrode sheet, the electrode sheet can be stably held with the minimum necessary laser bonding.

  Moreover, in the suitable one aspect | mode of this invention, it is comprised in the block shape so that a 1st electrode may serve as a heat sink. More preferably, a passage for flowing a coolant through the first electrode is provided. Further, in order to further increase the mounting strength of the entire package, bolt through holes for passing common bolts coaxially through the first electrode, the second electrode, the insulating layer, and the metal foil are respectively formed. The structure which fixes a 1st electrode and an electrode sheet with a volt | bolt on the base member in which the screw hole for combining is formed is taken. Here, the bolt through hole is preferably provided at or near the center of the electrode sheet.

  According to the present invention, a semiconductor laser package apparatus having a high bonding strength in a package, high reliability, no adverse effects on an optical system, and a clean environment can be obtained at a low cost by the configuration and operation as described above. It can be obtained with highly productive equipment.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  1 and 2 show the configuration of a high-power array type semiconductor laser (LDA) package according to an embodiment of the present invention. 1 is a longitudinal sectional view, and FIG. 2 is a plan view.

  In this LDA package 10, a bar-shaped one-dimensional LDA chip 14 is mounted in a bare state on one end of the upper surface of a block-shaped anode electrode 12 that also serves as a heat sink, and a cathode electrode 16 is separated from the LDA chip 14. It is attached to the upper surface of the anode electrode 12 via the insulating layer 18 and the metal foil 20.

  The lower surface of the LDA chip 14 constitutes an anode terminal and is directly connected to the upper surface of the anode electrode 12. The upper surface of the LDA chip 14 constitutes a cathode terminal, and is electrically connected to the cathode electrode 16 via a plurality of bonding wires 22 made of, for example, gold fine wires. The cathode electrode 16, the insulating layer 18, and the metal foil 20 are prepared as an electrode sheet 24 having a three-layer structure bonded together in advance, and the metal foil 20 under the electrode sheet 24 is formed of the anode electrode 102. The upper surface is joined by laser spot welding (W) at a predetermined position, that is, at the position of the welding hole 26.

  The anode electrode 12 and the cathode electrode 16 are electrically connected to the positive power supply terminal (+) and the negative power supply terminal (−) of the laser power supply through conductors (not shown), respectively. In the energized state, a forward current flows through the path of the anode electrode 12 → the LDA chip 14 → the bonding wire 22 → the cathode electrode 16, and each LD of the LDA chip 14 oscillates to have a flat radiation distribution extending in the LD array direction. The laser beam LB is emitted forward.

  Next, the main steps of the method for manufacturing the LDA package 10 will be described with reference to FIGS.

  As shown in FIG. 3, the cathode electrode 16, the insulating layer 18, and the metal foil 20 which comprise the electrode sheet 24 are prepared. The cathode electrode 16 is made of, for example, rolled copper having a thickness of 100 to 300 μm, the insulating layer 18 is made of, for example, a polyimide film having a thickness of 50 to 100 μm, and the metal foil 20 is made of, for example, rolled copper having a thickness of 50 to 100 μm. Here, in the cathode electrode 16 and the insulating layer 18, through holes 16a and 18a having the same diameter (for example, φ2 to 6 mm) are formed at positions corresponding to the welding holes 26 (FIGS. 1 and 2), respectively.

  Then, for example, the cathode electrode 16 and the copper foil 20 are bonded to the upper and lower surfaces of the polyimide film 18 by using the same laminating technique as that used for the production of a flexible wiring board (copper-clad board), respectively. As shown in FIG. 4, an electrode sheet 24 having an integral three-layer structure is formed. Here, on the copper foil 20, the through-hole 16a of the upper cathode electrode 16 and the through-hole 16a of the intermediate polyimide film 18 are vertically overlapped so that the bottom copper foil 20 is exposed on the bottom surface. 26 is also formed at the same time. As shown in FIGS. 4 and 5, a plurality of welding holes 26 in the electrode sheet 24 are provided from end to end along one end (one side) 24 a that faces the LDA chip 14 on the anode electrode 12. It is preferable to provide four (in the illustrated example).

  In the electrode sheet 24, gold plating may be applied to the surfaces of the upper cathode electrode 16 and the lower copper foil 20 to prevent oxidation (copper rust).

  As shown in FIG. 6, the LDA chip 14 is first attached to the upper surface of the anode electrode 12 at a predetermined position (tip portion) by joining the anode terminal on the lower surface, for example, by soldering. On the upper surface of the anode electrode 12 in such a state, an electrode sheet 24 is placed at a predetermined position behind the LDA chip 14 as shown in FIG. Here, the copper foil 20 under the electrode sheet 24 contacts the anode electrode 12.

  Next, as shown in FIG. 8, YAG second harmonic laser beam SHG having a wavelength of 532 μm is condensed and irradiated from above to each welding hole 26 of the electrode sheet 24, and the copper foil 20 is formed in the hole 26. Laser welding (W) is performed on the anode electrode 12. As a preferred embodiment, the YAG second harmonic laser beam SHG is a pulse laser beam having a peak power of 1 kW and a pulse width of 1 ms (laser energy of 1 joule), for example. The copper foil 20 in the welding hole 26 irradiated with the YAG second harmonic pulse laser beam SHG absorbs the YAG second harmonic laser energy at a high absorption rate and melts quickly. The anode electrode 12 made of copper just below it also melts by absorbing the laser energy of the YAG second harmonic at a high absorption rate. Further, the gold plating of the copper foil 20 also melts immediately after absorbing the laser energy of the YAG second harmonic. Thus, the melted portions of the copper foil 20 and the anode electrode 12 are solidified after the laser irradiation, and the weld nugget W is obtained. A YAG harmonic such as a YAG third harmonic (355 μm) or a YAG fourth harmonic (266 μm) can be suitably used instead of the YAG second harmonic (532 μm).

  In this laser spot welding, the processing time is extremely short, the heat input is limited to the welded (joined) portion, the thermal influence on the periphery is small, and the stress or strain is very small. For this reason, the mounting accuracy of the LDA chip 14 mounted on the anode electrode 12 is not affected. Further, it does not generate an organic solvent gas unlike an adhesive, and a clean bond free from environmental pollution can be obtained.

  In order to sequentially perform the above laser spot welding with respect to the plurality of welding holes 26, a work (24, 24) is fixed while a laser emitting unit (not shown) for condensing and irradiating the YAG second harmonic laser beam SHG is fixed. 12) Place the side on an XY table (not shown) and feed the index in one or two dimensions, or place the work (24, 12) on a stationary work table and scan the laser output unit side Or the like can be used. In either method, the required machining time per workpiece is less than 10 seconds. Incidentally, the conventional joining method using heat sealing required a time of several minutes or more.

  After the electrode sheet 24 is attached onto the anode electrode 12 as described above, the upper surface (cathode terminal) of the LDA chip 14 and the cathode electrode 16 are connected with the gold wire 22 by a conventional wire bonding method (FIG. 1). Thus, the basic assembly of the LDA package 10 in this embodiment is completed. In the above example, since the welding hole 26 of the electrode sheet 24 is provided in the vicinity of the bonding position to which the one end portion facing the LDA chip 14, that is, the gold wire 22 is connected, the electrode sheet is formed with the minimum necessary laser bonding W. 24 can be held stably.

  9 and 10 show a more specific or practical structure of the LDA package 10 in this embodiment.

  In the structure shown in FIG. 9, the basic assembly of the LDA package 10 is detachably attached to the base member 30 with bolts 32. At the center of the LDA package 10, that is, at the centers of the anode electrode 12, the cathode electrode 16, the polyimide film 18, and the copper foil 20, bolt through holes 50 for passing bolts 32 coaxially in the vertical direction are respectively provided. It is formed. Further, a screw hole 34 for screwing with the bolt 32 is formed on the upper surface of the base member 30. Usually, the base member 30 is also made of a metal having high conductivity, such as copper, and is electrically connected to the positive power supply terminal (+) of the laser power supply via a conductor (not shown). Further, between the head of the bolt 32 and the cathode electrode 16 of the electrode sheet 24, a plate-like pressing member 36 for pressing each part of the LDA package 10 from above with a uniform pressure is inserted. The pressing member 36 is also made of a metal having high conductivity, such as copper, and is electrically connected to a negative power source terminal (−) of the laser power source via a conductor (not shown).

  The structure shown in FIG. 10 is obtained by adding a water cooling function to the package structure of FIG. 9. A passage 38 for flowing cooling water in the anode electrode 12 of the heat sink is provided in a desired route, and the base member 30 has an anode. A cooling water introduction path (IN) 40 and a cooling water recovery path (OUT) 42 for circulating and supplying the cooling water to the cooling water passage 38 in the electrode 12 are provided. Note that the cooling water passage 38 in FIG. 10 is schematically shown for ease of illustration, and actually extends to every corner in the anode electrode 12 with a small diameter (1 mm or less) flow path.

  As described above, according to this embodiment, the electrode sheet 24 having a three-layer structure in which the insulating layer 18 is sandwiched between the cathode electrode 16 and the metal foil 20 is formed, and the metal foil 20 under the electrode sheet 24 and the anode of the heat sink are formed. By joining the electrode 12 with the laser welding from the welding hole 26 on the upper surface of the electrode sheet 24, the attachment (joining) strength of the cathode electrode 16 is high, and the heat effect at the time of joining and the stress on the LDA chip 14 are small and highly reliable The LDA package 10 is obtained.

  FIG. 11 shows a configuration of a stacked LDA package according to an embodiment. In this stack type, the basic assembly of the LDA package 10 manufactured according to the above-described embodiment is laminated on the base member 30 in multiple layers or multiple stages (four stages in the illustrated example) via the spacers 44 and integrated with bolts 32. The module as a whole constitutes a two-dimensional LDA. The spacer 44 is made of a metal having high conductivity, such as a copper plate, and the anode electrode 12 of the upper package 10 is connected to the cathode electrode 16 of the lower package 10 via the spacer 44 between the two upper and lower LDA packages 10, 10. It becomes the structure electrically connected. A collimating micro cylindrical lens 45 is attached to the front surface of the LDA chip 14 of each LDA package 10.

  As shown in FIG. 12, each LDA package 10 is provided with a bolt through hole 50 in the center and a pair of through holes 52 and 54 on both sides thereof. Further, in each LDA package 10, a cooling water passage 56 extending from the inner wall surface of one through hole 52 to the inner wall surface of the other through hole 54 is provided in the anode electrode 12 of the heat sink. The spacer 44 also has through holes formed at positions corresponding to the through holes 52 and 54 of each LDA package 10. In the entire stack module, a forward main cooling water passage 58 is formed in which the through holes 52 on one side of each stage are connected in a vertical line from the lowest level to the highest level and extend vertically upward, and on the opposite side of each level The main cooling water passage 60 of the return path is formed in which the through holes 54 are connected in a vertical line from the uppermost stage to the lowermost stage and extend vertically downward. In addition, annular grooves 62 and 64 are formed in the upper edge portion and the lower edge portion of the through holes 52 and 54, respectively, and a main cooling water passage is formed by seal members such as O-rings 66 and 68 provided in these grooves 62 and 64, respectively. 58 and 60 are each sealed.

  A part of the cooling water A sent to the main cooling water passage 58 in the forward path vertically upward from the cooling water introduction passage (IN) 40 of the base member 30 is partially sub-cooling passage 56 from the through hole 52 in the LDA package 10 of each stage. The remainder is sent to the upper LDA package 10. Then, the cooling water A that has passed through the sub-cooling passage 56 into the through-hole 54 in each stage flows down the main cooling water passage 60 in the return path vertically downward and is recovered in the cooling water recovery passage (OUT) 42 of the base member 30. .

  In this stack type LDA package, since the processing accuracy of each LDA package 10, particularly the mounting accuracy of the electrode sheet 24 is high, the sealing degree of the cooling water passages 58 and 60 is high (no leakage of cooling water), and each stage Since the LDA chips 14 of the LDA package 10 are arranged in multiple layers in parallel, a high-output two-dimensional laser beam can be generated with a stable beam diameter with high reproducibility.

  The preferred embodiments of the present invention have been described above. However, the present invention is not limited to the above-described embodiments, and various modifications and changes can be made within the scope of the technical idea. For example, the above-described embodiment relates to packaging of a high-power array type semiconductor laser (LDA), but the present invention can be applied to packaging of any semiconductor laser (LD). Further, the position and number of the welding holes 26 provided in the electrode sheet 24 can be arbitrarily selected. Further, the insulating layer 18 of the electrode sheet 24 may be made of a material other than polyimide, or may have a multilayer structure, or a large number of bonding wires 22 may be substituted with a single conductive sheet.

It is a longitudinal cross-sectional view which shows the structure of the high output array type semiconductor laser (LDA) package in one Embodiment of this invention. It is a top view which shows the structure of the LDA package in embodiment. It is an exploded sectional view showing the creation method of the electrode sheet in the LDA package of an embodiment. It is sectional drawing which shows the preparation method and structure of the electrode sheet in the LDA package of embodiment. It is a top view which shows the preparation method and structure of the electrode sheet in the LDA package of embodiment. It is a longitudinal cross-sectional view which shows one stage of the manufacturing method of the LDA package in embodiment. It is a longitudinal cross-sectional view which shows one stage of the manufacturing method of the LDA package in embodiment. It is a longitudinal cross-sectional view which shows one stage of the manufacturing method of the LDA package in embodiment. It is a longitudinal cross-sectional view which shows the more specific structural example of the LDA package in embodiment. It is a longitudinal cross-sectional view which shows another specific structural example of the LDA package in embodiment. It is a longitudinal section showing the composition of the stack type LDA package in an embodiment. It is a top view which shows the structure of the LDA package used for the stack module of FIG. It is a longitudinal cross-sectional view which shows the structure of the conventional LDA package.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 LDA package 12 Anode electrode 14 LDA chip 16 Cathode electrode 18 Insulating layer 20 Metal foil 22 Bonding wire 24 Electrode sheet 26 Welding hole 30 Base member 32 Bolt 36 Holding member 38 Cooling water passage 44 Spacer 50 Bolt through hole 52, 54 Through Hole 56 Cooling water passage

Claims (17)

One terminal of the semiconductor laser chip is connected to the upper surface of the first electrode and a second electrode is attached via an insulating layer, and the other terminal of the semiconductor laser chip and the second electrode serve as a conductor. A method of manufacturing a semiconductor laser package device electrically connected via
Bonding the second electrode and the metal foil to the upper surface and the lower surface of the insulating layer, respectively, to create a three-layer electrode sheet;
Forming in the second electrode and the insulating layer one or more bottomed welding holes where the metal foil is exposed on the bottom surface;
Placing the electrode sheet in a state where the metal foil is in contact with the upper surface of the first electrode;
Irradiating each of the welding holes with laser light, and joining the metal foil to the first electrode by laser welding.   A through hole is formed in each portion of the second electrode and the insulating layer corresponding to the position of the welding hole, and the second electrode and the metal foil are bonded together on both surfaces of the insulating layer. The method of manufacturing a semiconductor laser package device according to claim 1, wherein the welding hole is formed by overlapping a through hole of the electrode and a through hole of the insulating layer.   3. The method of manufacturing a semiconductor laser package device according to claim 1, wherein both of the first electrode and the metal foil are made of a copper-based metal, and the laser beam is a YAG harmonic laser beam. 4.   4. The method of manufacturing a semiconductor laser package device according to claim 3, wherein the metal foil is made of rolled copper.   5. The method of manufacturing a semiconductor laser package device according to claim 4, wherein the rolled copper is plated with gold.   The method for manufacturing a semiconductor laser package device according to claim 1, wherein the insulating layer is made of a polyimide film.   The method for manufacturing a semiconductor laser package device according to claim 1, wherein the second electrode is made of a copper-based metal.   The method of manufacturing a semiconductor laser package device according to claim 7, wherein the second electrode is made of rolled copper.   9. The method of manufacturing a semiconductor laser package device according to claim 8, wherein the rolled copper is plated with gold.   The method for manufacturing a semiconductor laser package device according to claim 1, wherein the welding hole is provided in the vicinity of one end portion of the electrode sheet facing the semiconductor laser chip.   The method of manufacturing a semiconductor laser package device according to claim 1, wherein the first electrode is configured in a block shape so as to also serve as a heat sink.   The method of manufacturing a semiconductor laser package device according to claim 11, wherein a passage for flowing a coolant is provided in the first electrode.   Bolt through holes for allowing common bolts to pass coaxially through the first electrode, the second electrode, the insulating layer, and the metal foil are formed, and screw holes for screwing with the bolts are formed. The manufacturing method of the semiconductor laser package apparatus as described in any one of Claims 1-12 which fixes the said 1st electrode and the said electrode sheet on the said base member with the said volt | bolt.   The method of manufacturing a semiconductor laser package device according to claim 13, wherein the bolt through hole is provided at or near the center of the electrode sheet. A first electrode;
A semiconductor laser chip mounted so that one terminal is connected to the upper surface of the first electrode;
A metal layer provided on the upper surface of the first electrode;
An insulating layer having a first through hole fixed on the metal layer;
A second electrode having a second through hole overlapping the first through hole fixed on the insulating layer;
A laser beam having a conductor for electrically connecting the other terminal of the semiconductor laser chip and the second electrode, and the metal layer is irradiated through the first and second through holes A semiconductor laser package device bonded to the first electrode by laser welding according to claim 1.   11. The semiconductor laser chip device according to claim 1, wherein the semiconductor laser chip is formed of a one-dimensional semiconductor laser array, and the semiconductor laser package device is connected to a second electrode on a lower stage side and a second one on an upper stage side. A stack type semiconductor laser package device which constitutes a two-dimensional semiconductor laser array by stacking a plurality of layers through conductive spacer members so that one electrode is electrically connected. 17. The semiconductor laser package device according to claim 15, wherein both of the metal layer and the first electrode are made of a copper-based metal, and the laser beam is YAG second harmonic.

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