CN103715600B - A kind of high-power semiconductor laser of low thermal stress structure - Google Patents
A kind of high-power semiconductor laser of low thermal stress structure Download PDFInfo
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- CN103715600B CN103715600B CN201310738638.0A CN201310738638A CN103715600B CN 103715600 B CN103715600 B CN 103715600B CN 201310738638 A CN201310738638 A CN 201310738638A CN 103715600 B CN103715600 B CN 103715600B
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Abstract
The present invention provides the high-power semiconductor laser of a kind of low thermal stress structure, and the semiconductor laser thermal stress of this structure is low, it is possible to adapt to complex work environment.This high-power semiconductor laser mainly includes the four-layer structure stacked gradually, ground floor is heat sink as positive pole contiguous block, chip installation area and insulation layer it is provided with on heat sink mounting plane, the second layer includes semiconductor laser chip and insulating trip, semiconductor laser chip is welded in described chip installation area, insulating trip is installed on described insulation layer, and third layer has been the connection electrode layer of electric action, and the 4th layer is negative pole contiguous block；In described connection electrode layer, the position welded with semiconductor laser chip is plane dentate structure, in order to reduce the thermal stress between connection electrode layer and chip, this position keeps gap with negative pole contiguous block, and other positions of connection electrode layer are welded with negative pole contiguous block.
Description
Technical field
The present invention relates to the semiconductor laser of a kind of low stress.
Background technology
The stress that semiconductor laser encapsulation produces seriously governs the Output optical power of device, working life and Spectral Properties
Property, it is the principal element causing high power semiconductor laser device reliability difference.
For semiconductor laser, produce thermal stress main cause be semiconductor laser chip positive pole-face,
The thermal expansion system of (contact surface) between negative pole face and corresponding conducting block (generally with articulamentum or directly use heat sink form)
Number is inconsistent to be caused.As a example by positive pole-face, for good heat radiation, it is common that positive for semiconductor laser chip pole-face is welded
On the metal heat sink with high heat conduction.Owing to semiconductor laser chip and heat sink thermal coefficient of expansion are inconsistent, temperature becomes
Change and will cause the generation of thermal stress and the buckling deformation of chip of laser, if thermal stress is excessive even can cause chip and metal fever
Weld layer cracking between Chen, the problem such as semiconductor laser chip fracture, have a strong impact on semiconductor laser reliability and
Life-span.The thermal coefficient of expansion of such as chip is 6.7ppm/K, heat sink selection metallic copper, the thermal coefficient of expansion 17.8ppm/ of metallic copper
K, same length chip and copper, often change 1 DEG C, the length change of copper will be 2.7 times of chip.If metal level and chip surface
Being to separate, metal connecting layer will move at chip surface, and displacement is bigger.But in the ordinary course of things, metal connects
Layer sticks or is welded on chip surface, and it can not move at chip surface, but there is this trend, so at chip
And metal connecting layer or chip and heat sink between will there is shear stress.This power may make the metal of attachment on chip
Layer, generation sliding, cause short circuit or open circuit between bonding jumper, it is also possible to make chip rupture affect the reliability of semiconductor laser
And the life-span.
When semiconductor laser works in complex environment, the temperature cycles process from room temperature to extreme cold environment,
The difference of the thermal coefficient of expansion between semiconductor laser chip and heat sink (contact surface) can produce the biggest thermal stress and cause point
Layer or cracking.
If additionally, for the metal layer region one overall region (block) contacted with semiconductor laser chip, chip with
The metallic region of contact is generally fixedly connected by solder, and it is thick that solder layer is typically both sides, and intermediate thin can cause at laser
During device work, semiconductor laser chip and the weld layer contacted with chip of laser, and semiconductor laser core
Temperature difference, the non-homogeneous heat that in whole semiconductor laser chip width, luminescence unit is suffered is there is between sheet and metal heat sink
Stress will cause Wavelength distribution uneven, and derivative spectomstry broadening causes chip to produce bigger thermal stress, causes laser wave journey by raft down the Yangtze River
Move, and wide spectrum and acromion occur.
The method of reduction thermal stress usual for semiconductor laser has the most several:
(1) Heat Conduction Material being closer to semiconductor laser chip thermal coefficient of expansion, such as copper tungsten, but copper are selected
The heat conductivility of tungsten material is lower than metallic copper, causes selecting copper tungsten as the overall heat conductivility of heat sink semiconductor laser relatively
Low.
(2) select slicken solder to weld at semiconductor laser chip between heat sink, such as, select indium metal conduct
Solder, but indium is easily generated electromigration under high currents and electric heating migrates, and this significantly reduces again the reliable of semiconductor laser
Property.
Summary of the invention
For overcoming the shortcoming of prior art, the present invention provides the high-power semiconductor laser of a kind of low thermal stress structure,
The semiconductor laser thermal stress of this structure is low, it is possible to adapt to complex work environment.
Technical scheme is as follows:
The high-power semiconductor laser of a kind of low thermal stress structure, mainly includes the four-layer structure stacked gradually, first
Layer is heat sink as positive pole contiguous block, and heat sink mounting plane is provided with chip installation area and insulation layer, and the second layer includes
Semiconductor laser chip and insulating trip, semiconductor laser chip is welded in described chip installation area, and insulating trip is installed on institute
Stating insulation layer, third layer has been the connection electrode layer of electric action, and the 4th layer is negative pole contiguous block；
In described connection electrode layer, the position welded with semiconductor laser chip is plane dentate structure, in order to reduce
Thermal stress between connection electrode layer and chip, this position keeps gap, other positions of connection electrode layer with negative pole contiguous block
Weld with negative pole contiguous block.
Scheme, mainly solves the thermal expansion that negative pole contiguous block welds with semiconductor laser chip negative pole face as mentioned above
Coefficients match problem, compares to traditional scheme, achieved with significant progress.Pole-face positive for semiconductor laser chip, still
Can use and be directly welded at, at positive pole-face, the conventional knot that heat sink thin slice (thermal coefficient of expansion matches with chip) formation electrically connects
Structure, it is also possible to consider the following more excellent scheme of the present invention.
Based on such scheme, the present invention makees following optimization the most further and limits and improve:
Pole-face positive for chip with heat sink between weld, the present invention provides two solutions further:
One, the position corresponding to semiconductor laser chip on heat sink chip installation area is provided with a heat sink connection
Layer, this is heat sink, and articulamentum uses metal molybdenum.Through analyzing and experiment, metal molybdenum is mated the most with the thermal expansion character of chip.
Two, the position corresponding to semiconductor laser chip on heat sink chip installation area is provided with a heat sink connection
Layer, this is heat sink, and articulamentum is formed by the multiple fritters arrangement keeping gap each other.
Certainly, the preferred metal molybdenum of the material of the fritter of heat sink articulamentum in first scheme.
Owing to the thickness of usual semiconductor laser chip is less than insulating trip, therefore the present invention provides optimization the most further
Processing structure: near negative pole contiguous block side, semiconductor laser chip is concordant with insulating trip plane；Negative pole contiguous block corresponds to
The position of described plane dentate structure is set to step-like so that this position keeps gap with negative pole contiguous block；Described heat sink company
Connect layer to be projected in made heat sink platform, welded with the positive pole-face of semiconductor laser chip by this heat sink articulamentum.
Certainly, semiconductor laser chip can also be that opposite side plane is concordant with insulating trip, and accordingly, plane dentate is tied
Structure needs to carry out bending to weld with semiconductor laser chip negative pole face；The most heat sink articulamentum is heat sink flat without being projected on
On platform.Even semiconductor laser chip and insulating trip two side plane all without concordant also can, simply processing is upper or there is inconvenience, surely
Qualitative limited.
The above-mentioned preferred comb teeth-shaped of plane dentate structure or plane S-shaped tooth, naturally it is also possible to each tooth is irregular shape
State.Comb teeth-shaped or plane S-shaped tooth, be both easy to processing, and can carry out again the size of tooth more accurately for semiconductor laser
Design and optimization.
Through analyzing and experimental demonstration, the width of each tooth that above-mentioned connection electrode layer contacts with semiconductor laser chip is
It is more than wellThe quantity at least two of tooth；
Wherein, I is semiconductor laser chip operating current；ρ0Resistivity for connection electrode layer；T is the working time；C
For connection electrode layer specific heat capacity；ρ is connection electrode layer density；Tm is the weldering between connection electrode layer and semiconductor laser chip
The melt temperature of material；T0For room temperature；H is the transverse tooth thickness degree of the connection electrode layer contacted with chip；N is the quantity of tooth.
The design of plane dentate structure based on the present invention, above-mentioned connection electrode layer can use copper, silver-colored or golden material.Excellent
Select copper, and gold-plated with the contact surface of semiconductor laser chip at connection electrode layer.
The material preferably ceramic of above-mentioned insulating barrier or diamond, thickness is 0.2 0.5mm.
Above-mentioned heat sink preferred copper or copper tungsten.
Present invention have the advantage that
The high power semiconductor laser device reliability of the low stress structure of the present invention is high, and the life-span is long, and spectrum is narrow, can be in complexity
It is operated under environment.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Fig. 2 is that (position welded with semiconductor laser chip is plane S-shaped dentation for the schematic diagram of a kind of connection electrode layer
Structure).
Fig. 3 is that (position weld with semiconductor laser chip is that comb teeth-shaped is tied for the schematic diagram of another kind of connection electrode layer
Structure).
Fig. 4 is the size definition of comb teeth-shaped each tooth of structure.
Drawing reference numeral illustrates:
1 semiconductor laser chip；2 is heat sink；3 connection electrode layers；4 insulating barriers；5 negative pole contiguous blocks；6 teeth；7‐
Heat sink articulamentum；W tooth width；H transverse tooth thickness degree；L tine length.
Detailed description of the invention
The high-power semiconductor laser of the present invention, mainly includes the four-layer structure stacked gradually, and ground floor is as just
Pole contiguous block heat sink, heat sink mounting plane is provided with chip installation area and insulation layer, and the second layer includes semiconductor laser
Device chip and insulating trip, semiconductor laser chip is welded in described chip installation area, and insulating trip is installed on described insulation layer, the
Three layers is connection electrode layer, and the 4th layer is negative pole contiguous block.
If connection electrode layer and semiconductor laser chip integral solder, the then face contacted with semiconductor laser chip
Long-pending relatively big, semiconductor laser chip is connected coating region with the electrode contacted and is fixedly connected by solder, and solder layer leads to
It is often that both sides are thick, intermediate thin, the temperature difference can be there is and cause semiconductor laser chip thermal stress relatively big, simultaneously as partly lead
The whole area of body laser chip contacts with connection electrode layer, and contact area is big, causes connection electrode layer and semiconductor laser
The strain in the region of chip contact is relatively big, and noise spectra of semiconductor lasers chip thermal stress can be big.
Therefore, the present invention considers that the connection electrode layer above semiconductor laser chip and insulating trip acts primarily as the work of conduction
With.Owing to chip solder side to have been made the design of plane dentate structure, the difference of a range of thermal coefficient of expansion can be allowed,
It is beneficial to heat radiation.
The thermal coefficient of expansion of connection electrode layer is bigger than the thermal coefficient of expansion of semiconductor laser chip, but connection electrode layer
It is set to comb teeth-shaped or plane S dentation so that connection electrode layer and quasiconductor with the contact area of semiconductor laser chip
The contact site of chip of laser is divided into multiple little unit, and each junior unit is little with the contact area of chip, strains less,
Chip thermal stress is significantly reduced.
It may be further contemplated, the width of each tooth can not the widest can not be too narrow.If the width of dentation is the widest, for partly leading
The thermal stress of body laser chip reduces few, does not reaches effect；If the width of dentation is too narrow, as made filament shape, permissible
Largely reduce thermal stress, but bigger electric current can not be born, if the heat that the excessive narrow dentation of electric current sends will make weldering
Material fusing causes the global reliability of semiconductor laser to reduce.
The width of each tooth that connection electrode layer contacts with semiconductor laser chip more preferably greater than
The quantity at least two of tooth.
Wherein, I is semiconductor laser chip operating current；ρ0Resistivity for connection electrode layer；T is the working time；C
For connection electrode layer specific heat capacity；ρ is connection electrode layer density；TmFor the weldering between connection electrode layer and semiconductor laser chip
The melt temperature of material；T0For room temperature；H is the transverse tooth thickness degree of the connection electrode layer contacted with chip；N is the quantity of tooth.
Theoretical reckoning is as follows:
The heat that the electric current of the connection electrode layer contacted with chip produces need to be less than the connection electrode layer contacted with chip
Temperature is raised to its melt temperature from room temperature or is raised to, from room temperature, the heat that solder fusion temperature is absorbed.Under normal circumstances, weldering
The melt temperature of material is less than the melt temperature of connection electrode layer.
If the melt temperature of connection electrode layer is higher than the melt temperature of solder, the then electricity of the connection electrode layer contacted with chip
The heat of miscarriage life need to be raised to solder fusion temperature less than the connection electrode layer temperature contacted with chip from room temperature and be absorbed
Otherwise heat by being raised to the heat that connection electrode layer melt temperature is absorbed.
Operating current I is the electric current by the connection electrode layer contacted with semiconductor laser chip, then by each tooth
Electric current for sendingThe electric current heat by each tooth(formula 1)
I is the electric current of the connection electrode layer contacted with chip by connection electrode layer；R is that the electrode contacted with chip connects
The resistance of each tooth of layer；T is the working time；N is the quantity of tooth.
ρ0Resistivity for connection electrode layer；See the length that Fig. 4, L are each tooth of the connection electrode layer contacted with chip；
W is the width of each tooth of the connection electrode layer contacted with chip；H is the thickness of each tooth of connection electrode layer contacted with chip
Degree.
The each tooth of connection electrode layer contacted with semiconductor laser chip is raised to temperature T from room temperaturemThe required heat absorbed
Amount
Q0=cm(Tm-T0) (formula 3)
Wherein: m=ρ LWH (formula 4)
C is connection electrode layer specific heat capacity, and m is the quality of each tooth of the connection electrode layer contacted with chip；ρ is that electrode connects
Layer density；
The heat that operating current I is sent by each tooth of connection electrode layer contacted with semiconductor laser chip should be less than
Each tooth is raised to temperature T from room temperaturemThe required heat absorbed, i.e.
Q≤Q0(formula 5)
I.e.
Formula 2 and formula 4 are substituted into formula 6, show that the connection electrode layer width contacted with chip is
The connection electrode layer width i.e. contacted with chip is more than
Semiconductor laser chip thickness is about 0.13mm.Because of the thinner thickness of semiconductor laser chip, due to processing
The restriction of technique, the thickness of insulating barrier accomplishes more difficulty consistent with chip thickness, so the thickness of insulating barrier is in the present invention
0.2‐0.5mm.As it is shown in figure 1, near a side plane of negative pole contiguous block, semiconductor laser chip is concordant with insulating trip；Negative
Pole contiguous block is set to step-like corresponding to the position of described plane dentate structure so that between this position and negative pole contiguous block keep
Gap；Described heat sink articulamentum is projected in made heat sink platform, by the positive pole-face of this heat sink articulamentum Yu semiconductor laser chip
Welding.
In the present invention, connection electrode layer selects the materials such as metallic copper, silver, gold, and its thermal coefficient of expansion is all than semiconductor laser
The thermal coefficient of expansion of chip is big, and the stress of noise spectra of semiconductor lasers chip is tensile stress.Can be according to practical semiconductor laser instrument core
The difference of the cold wavelength of multiple luminous points in sheet, design tooth width is different.Such as, whole semiconductor laser is needed to send wavelength and be
808nm, sends narrow spectrum, and semiconductor laser chip is 7 luminescence units, and cold wavelength is respectively 807.9(the first luminous point),
807.8(the second luminous point), 807.7(the 3rd luminous point), 808.1(the 4th luminous point), 807.6(the 5th luminous point), 807.9
(the 6th luminous point), 807.8(the 7th luminous point)；Then corresponding to each luminescence unit in connection electrode layer plane dentate structure
The width that tooth width could be arranged to the 4th luminous point is minimum, so can be minimum to the tensile stress of the 4th luminous point, successively to sending out
What luminous point wavelength was short arranges wide tooth, and luminous point wavelength length arranges narrow tooth, so final packaged semiconductor laser
The wavelength that multiple luminous points send reaches unanimity, it is achieved narrow spectral laser exports.
Claims (10)
1. the high-power semiconductor laser of a low thermal stress structure, it is characterised in that: include the four-layer structure stacked gradually,
Ground floor is heat sink as positive pole contiguous block, and heat sink mounting plane is provided with chip installation area and insulation layer, the second layer
Including semiconductor laser chip and insulating trip, semiconductor laser chip is welded in described chip installation area, and insulating trip is installed
In described insulation layer, third layer has been the connection electrode layer of electric action, and the 4th layer is negative pole contiguous block；
In described connection electrode layer, the position welded with semiconductor laser chip is plane dentate structure, in order to reduce electrode
Thermal stress between articulamentum and chip, this position and negative pole contiguous block holding gap, other positions of connection electrode layer are with negative
Pole contiguous block welding.
The high-power semiconductor laser of low thermal stress structure the most according to claim 1, it is characterised in that: heat sink
On chip installation area, the position corresponding to semiconductor laser chip is provided with a heat sink articulamentum, and this is heat sink, and articulamentum uses gold
Belong to molybdenum.
The high-power semiconductor laser of low thermal stress structure the most according to claim 1 and 2, it is characterised in that: in heat
On heavy chip installation area, the position corresponding to semiconductor laser chip is provided with a heat sink articulamentum, this is heat sink articulamentum by
The multiple fritters arrangement keeping gap each other is formed.
The high-power semiconductor laser of low thermal stress structure the most according to claim 3, it is characterised in that: near negative pole
Contiguous block side, semiconductor laser chip is concordant with insulating trip plane；Negative pole contiguous block corresponds to described plane dentate structure
Position be set to step-like so that this position and negative pole contiguous block keep gap；Described heat sink articulamentum is projected on heat sink flat
On platform, welded with the positive pole-face of semiconductor laser chip by this heat sink articulamentum.
The high-power semiconductor laser of low thermal stress structure the most according to claim 3, it is characterised in that: described plane
Dentalation is comb teeth-shaped or plane S-shaped tooth.
The high-power semiconductor laser of low thermal stress structure the most according to claim 3, it is characterised in that: electrode connects
The width of each tooth that layer contacts with semiconductor laser chip is more thanThe quantity of tooth is at least two
Individual；
Wherein, I is semiconductor laser chip operating current；ρ0Resistivity for connection electrode layer；T is the working time；C is electricity
Pole articulamentum specific heat capacity；ρ is connection electrode layer density；TmFor the solder between connection electrode layer and semiconductor laser chip
Melt temperature；T0For room temperature；H is the transverse tooth thickness degree of the connection electrode layer contacted with chip；N is the quantity of tooth.
The high-power semiconductor laser of low thermal stress structure the most according to claim 3, it is characterised in that: described electrode
Articulamentum is copper, silver-colored or golden.
The high-power semiconductor laser of low thermal stress structure the most according to claim 7, it is characterised in that: described electrode
Articulamentum is copper, gold-plated with the contact surface of semiconductor laser chip at connection electrode layer.
The high-power semiconductor laser of low thermal stress structure the most according to claim 3, it is characterised in that: described insulation
The material of sheet is pottery or diamond, and thickness is 0.2 0.5mm.
The high-power semiconductor laser of low thermal stress structure the most according to claim 3, it is characterised in that: described
Heat sink for copper or copper tungsten.
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| CN106684700A (en) * | 2017-03-02 | 2017-05-17 | 长春理工大学 | Semiconductor laser heat sink |
| CN109950789A (en) * | 2019-04-11 | 2019-06-28 | 江苏天元激光科技有限公司 | A kind of electrode welding structure of laser bar item |
| CN111740310B (en) * | 2020-07-10 | 2021-10-22 | 西安立芯光电科技有限公司 | Method for realizing no mode jump in semiconductor laser chip lock wave |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640379A (en) * | 2009-08-31 | 2010-02-03 | 西安炬光科技有限公司 | Novel low-cost stack-up array liquid refrigeration semiconductor laser and manufacturing method thereof |
| CN101640372A (en) * | 2009-08-31 | 2010-02-03 | 西安炬光科技有限公司 | Novel low-cost single bar liquid refrigeration laser and manufacturing method thereof |
| JP4800019B2 (en) * | 2005-11-28 | 2011-10-26 | ミヤチテクノス株式会社 | Semiconductor laser package device and manufacturing method thereof |
| CN102684066A (en) * | 2012-05-29 | 2012-09-19 | 西安炬光科技有限公司 | Dual-channel liquid cooling multiquantum-well semiconductor laser and preparation method thereof |
| CN203747236U (en) * | 2013-12-25 | 2014-07-30 | 西安炬光科技有限公司 | High-power semiconductor laser of a low thermal stress structure |
-
2013
- 2013-12-25 CN CN201310738638.0A patent/CN103715600B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4800019B2 (en) * | 2005-11-28 | 2011-10-26 | ミヤチテクノス株式会社 | Semiconductor laser package device and manufacturing method thereof |
| CN101640379A (en) * | 2009-08-31 | 2010-02-03 | 西安炬光科技有限公司 | Novel low-cost stack-up array liquid refrigeration semiconductor laser and manufacturing method thereof |
| CN101640372A (en) * | 2009-08-31 | 2010-02-03 | 西安炬光科技有限公司 | Novel low-cost single bar liquid refrigeration laser and manufacturing method thereof |
| CN102684066A (en) * | 2012-05-29 | 2012-09-19 | 西安炬光科技有限公司 | Dual-channel liquid cooling multiquantum-well semiconductor laser and preparation method thereof |
| CN203747236U (en) * | 2013-12-25 | 2014-07-30 | 西安炬光科技有限公司 | High-power semiconductor laser of a low thermal stress structure |
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