JP2007142372A5 - - Google Patents

Claims (10)

A first spacer layer provided on the first substrate;
A piezoelectric element provided on the first spacer layer;
A second spacer layer provided above or on the side of the piezoelectric element;
Anda second substrate provided on said second spacer layer,
The piezoelectric element has a first electrode, a piezoelectric material, a second electrode 及 beauty,
The first respective spacer layer and the second spacer layer has an adhesive property, micro-electro-mechanical device, which comprises perforated openings overlapping the piezoelectric element. A first spacer layer provided on the first substrate;
A functional layer provided on the first spacer layer;
A second spacer layer provided above or on the side of the functional layer;
And a second substrate provided on said second spacer layer,
The functional layer has one or more functions selected from piezoelectric elements, thermoelectric elements, strain resistance elements, inductors, and capacitors,
The first respective spacer layer and the second spacer layer has an adhesive property, micro-electro-mechanical device, which comprises perforated openings overlapping the functional layer. In claim 1 or claim 2,
Each of the first substrate and the second substrate is a film substrate. In any one of Claims 1 thru | or 3,
The micro electromechanical device, wherein the first spacer layer has an anisotropic conductive adhesive. A transistor provided over a first substrate,
A connection terminal electrically connected to the transistor ;
A first spacer layer provided above or on the side of the connection terminal ;
A piezoelectric element provided on the first spacer layer;
A second spacer layer provided above or on the side of the piezoelectric element;
And a second substrate provided on said second spacer layer,
The piezoelectric element has a first electrode, a piezoelectric material, a second electrode 及 beauty,
Wherein each of the first spacer layer and the second spacer layer, having adhesion, the semiconductor device characterized in that it have the aperture overlapping the piezoelectric element. A transistor provided on a first substrate;
A connection terminal electrically connected to the transistor ;
A first spacer layer provided above or on the side of the connection terminal ;
A functional layer provided on the first spacer layer;
A second spacer layer provided above or on the side of the functional layer;
And a second substrate provided on said second spacer layer,
The functional layer has one or more functions selected from piezoelectric elements, thermoelectric elements, strain resistance elements, inductors, and capacitors,
Wherein each of the first spacer layer and the second spacer layer, having adhesion, the semiconductor device characterized in that it have the aperture overlapping the functional layer. In claim 5 or claim 6 ,
Each said first substrate and the second substrate, wherein a film substrate der Rukoto. In claim 5,
The first spacer layer has an anisotropic conductive adhesive;
The semiconductor device, wherein the connection terminal and the piezoelectric element are electrically connected via the first spacer layer. In claim 6,
The first spacer layer has an anisotropic conductive adhesive;
The semiconductor device, wherein the connection terminal and the functional layer are electrically connected through the first spacer layer. In any one of Claims 5 thru / or 9,
The semiconductor device, wherein the transistor is a thin film transistor.