JP2007141974A5

JP2007141974A5 -

Info

Publication number: JP2007141974A5
Application number: JP2005330888A
Authority: JP
Filing date: 2005-11-15
Publication date: 2010-02-12
Anticipated expiration: 2025-11-15

Claims

Laminating an insulating film and an electrode metal layer on the surface of the first diamond semiconductor region, and further laminating a first sacrificial layer;
Patterning a resist locally on the surface of the first sacrificial layer;
Using the resist as a mask, the first sacrificial layer, the electrode metal layer, and the insulating film are etched, and then the resist is removed to form an insulating film and an electrode on the surface of the first diamond semiconductor region. Patterning a laminate composed of a metal layer and a first sacrificial layer;
Forming a second sacrificial layer on a side surface of the laminate;
Forming an impurity layer doped with impurities on the entire surface ;
The impurity layer on the stacked body and the second sacrificial layer is removed by lift-off by removing the first and second sacrificial layers by etching , and remains on the first diamond semiconductor region. Forming second and third diamond semiconductor regions with an impurity layer ;
Forming an electrode metal on the surfaces of the second and third diamond semiconductor regions;
A method for producing a diamond semiconductor element, comprising:

The step of forming the impurity layer, the manufacturing method of a diamond semiconductor device according to claim 1, characterized in that said impurity layer is to form by a microwave CVD method at 600 ° C. or lower.

The step of forming the second sacrificial layer, and wherein the entire surface by etching back after the form form the second sacrificial layer is intended to leave the second sacrificial layer on the side surfaces of the laminate A method for producing a diamond semiconductor device according to claim 2.

Laminating an insulating film and an electrode metal layer on the surface of the first diamond semiconductor region, and further laminating a first sacrificial layer;
Patterning a resist locally on the surface of the first sacrificial layer;
Using the resist as a mask, the first sacrificial layer, the electrode metal layer, and the insulating film are etched, and then the resist is removed to form an insulating film and an electrode on the surface of the first diamond semiconductor region. Patterning a laminate composed of a metal layer and a first sacrificial layer;
Forming an impurity layer doped with impurities so as not to contact the electrode metal layer only on the surface of the first diamond semiconductor region, and forming the second and third diamond semiconductor regions by the impurity layer ; When,
Removing the first sacrificial layer by etching;
Forming an electrode metal on the surfaces of the second and third diamond semiconductor regions;
A method for producing a diamond semiconductor element, comprising:

A buffer layer including a semiconductor element layer containing at least a semiconductor element is stacked between the insulating film and the electrode metal layer, and the second and third diamond semiconductor regions have a temperature exceeding 600 ° C. and not more than 1200 ° C. The method for producing a diamond semiconductor element according to claim 4 , wherein the diamond semiconductor element is formed by a microwave CVD method at a temperature of 5 ° C.

The buffer layer has a two-layer structure of the semiconductor element layer and the oxide layer of the semiconductor element, and the electrode metal layer and the semiconductor element layer react when heated at the temperature. A method for producing a diamond semiconductor device according to claim 5 .

The semiconductor element is silicon or germanium, and the electrode metal layer is Au, Ag, Cu, W, Ti, Mo, Ni, Ta, Nb, Pt, Ce, Co, Cr, Dy, Fe, Gd, Hf, The diamond semiconductor device according to claim 6 , wherein the diamond semiconductor device is formed of at least one selected from the group consisting of Mn, Nd, Pd, Pr, Ru, Sr, Tb, V, Y, and Zr. Method.

Before the step of forming the second and third diamond semiconductor regions, a step of forming a second sacrificial layer on both side surfaces of the stacked body is provided, and the second and third diamond semiconductor regions are formed. after the step of manufacturing a diamond semiconductor device according to any one of claims 4 to 7, characterized by comprising a step of removing by etching the second sacrificial layer.

After patterning the laminate, in any one of claims 1 to 8, characterized in that recessing the surface of the first first and further etching the surface of the diamond semiconductor region of diamond semiconductor region The manufacturing method of the diamond semiconductor element of description.

After the laminate was formed, a manufacturing method of a diamond semiconductor device according to any one of claims 1 to 9, characterized in that a step of forming a second insulating film on the side surface of the laminate.

A laminate that is locally formed on the first diamond semiconductor region and includes a lower insulating film and an upper electrode metal layer;
Second and third diamond semiconductor regions provided adjacent to both sides of the stack on the first diamond semiconductor region;
Electrodes respectively formed on the second and third diamond semiconductor regions;
A diamond semiconductor device comprising:

12. The diamond semiconductor element according to claim 11 , wherein the second and third diamond semiconductor regions are made of microcrystalline diamond having a diamond grain size of 1 to 100 nm.

The diamond semiconductor according to claim 11 , wherein a buffer layer is disposed between the insulating film and the electrode metal layer, and the buffer layer includes a semiconductor element layer containing at least a semiconductor element. element.

The second and third diamond semiconductor regions, the diamond semiconductor device according to any one of claims 11 to 13, characterized in that it is heavily doped than said first diamond semiconductor region.

Diamond semiconductor device according to any one of claims 11 to 14, characterized in that the second insulating film on both sides of the laminate is formed.

The second and third diamond semiconductor regions and the insulating film of the stacked body are disposed on the same plane as the first diamond semiconductor region, and the insulating film has a thickness of the second and second diamond semiconductor regions. 3 diamond semiconductor device according to any one of claims 11 to 15, being greater than the thickness of the diamond semiconductor region.

The length of the laminate serving as a channel region (width), diamond semiconductor device according to any one of claims 11 to 16, wherein the at 10nm or more 1μm or less.