JP2007141582A - Discharge plasma treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a discharge plasma treatment device capable of substantially enlarging a discharge area on a treated body with little risk of causing plasma damage to the treated object. <P>SOLUTION: After a gas to turn to plasma is supplied between each electrode, high-frequency voltage is impressed on a first electrode 12. With this, a potential difference occurs between the first electrode 12 and a second electrode 16, and plasma P1 is generated there. As the plasma P1 is generated, a faint potential is generated at the second electrode 16. When the faint potential is generated at the second electrode 16, a potential difference occurs between the second electrode 16 and a third electrode 18, and plasma P2 is also generated between them 16, 18. A potential of the plasma P2 is remarkably lower than that of the plasma P1, and treatment of the treated object 22 between the second electrode 16 and the third electrode 18 is performed by the plasma P2. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a discharge plasma processing apparatus, and more particularly to a multistage discharge plasma processing apparatus that can generate plasma that does not generate a high electric field at the start of discharge and can further increase excitation efficiency.

  2. Description of the Related Art Conventionally, various discharge plasma generation systems and processing system discharge plasma processing apparatuses have been proposed and put into practical use. In particular, a method is widely used in which a pair of parallel plates are used as electrodes, a voltage is applied between the electrodes, and the object to be processed is processed in the generated plasma (prior art 1). This method has the simplest electrode structure, can be miniaturized as an apparatus, and has a property that the processing speed is increased because the object to be processed is placed in the discharge space.

  However, in the prior art 1, since the object to be processed is installed in the discharge space, there is a problem that plasma damage is likely to be caused to the object to be processed. In particular, in the case of discharge plasma in the vicinity of atmospheric pressure, there is a problem that the electric field is not stable, streamer discharge or the like is likely to occur, and plasma damage or electrostatic breakdown is extremely likely to occur.

In order to solve the above problems, there is a discharge processing apparatus that generates plasma at a distance from the object to be processed, such as inductively coupled plasma or microwave plasma, and processes the object to be processed (Prior Art 2). In this method, since high-density plasma can be generated, a sufficient processing speed can be obtained even if the method is separated from the object to be processed.
JP-A-11-195589

  However, the above-described conventional technique 2 has a problem that the structure is complicated, which increases the manufacturing cost of the device and makes it difficult to increase the size due to the principle of exciting plasma. In addition, a remote type plasma processing apparatus that ejects plasma gas has been developed for discharge plasma in the vicinity of atmospheric pressure. However, although the damage to the object to be processed is reduced, the processing speed is slow and the object discharges. There are problems that the area cannot be increased and the amount of gas used is large.

  In view of the above circumstances, an object of the present invention is to provide a discharge plasma processing apparatus that can sufficiently increase the discharge area to the object to be processed and that is unlikely to cause plasma damage to the object to be processed. .

  According to the first aspect of the present invention, a first electrode to which a high-frequency voltage is applied, a second electrode that is disposed so as to face the first electrode and is grounded, and the second electrode A third electrode disposed to face the electrode and grounded; a high-frequency power source that applies a high-frequency voltage to the first electrode; and between the first electrode and the second electrode; and And a gas supply means for supplying a gas to be converted into plasma between the second electrode and the third electrode.

  According to the first aspect of the present invention, when the object to be processed is disposed between the second electrode and the third electrode, the gas supply means causes the gap between the first electrode and the second electrode. A gas to be converted into plasma is supplied between the second electrode and the third electrode. When a gas to be converted into plasma is supplied between the first electrode and the second electrode and between the second electrode and the third electrode, and between the first electrode and the second electrode, A gas is filled between the second electrode and the third electrode. Thereafter, a high frequency voltage is applied to the first electrode by a high frequency power source. When a high-frequency voltage is applied to the first electrode, the second electrode is grounded, so that a potential difference is generated between the first electrode and the second electrode. Thereby, plasma is generated between the first electrode and the second electrode.

  Here, since the second electrode is grounded, the initial potential of the second electrode is 0 V. However, when plasma is generated between the first electrode and the second electrode, A slight potential is generated at the two electrodes. When a slight potential is generated in the second electrode, the third electrode is grounded, so that a potential difference is generated between the second electrode and the third electrode, and the second electrode and the third electrode Plasma is also generated between the two. At this time, the potential of the plasma generated between the second electrode and the third electrode is such that the potential difference between the second electrode and the third electrode is between the first electrode and the second electrode. Therefore, the potential of the plasma generated between the first electrode and the second electrode is much lower. And the process of the to-be-processed object arrange | positioned between the 2nd electrode and the 3rd electrode is performed by plasma with a remarkably low potential.

  As described above, according to the present invention, the object to be processed is processed by the plasma having a remarkably low potential, so that plasma damage to the object to be processed can be greatly reduced. In addition, since the potential difference between the second electrode and the third electrode on which the target object is disposed is small, it is possible to prevent electrostatic breakdown from occurring. Furthermore, as described above, the structure of the discharge plasma processing apparatus is simple, and the manufacturing cost of the apparatus can be reduced.

  In particular, only by setting each electrode to a predetermined size or more, the discharge area to the object to be processed is increased, and a large area of the object to be processed can be collectively processed.

  According to a second aspect of the present invention, there is provided the discharge plasma processing apparatus according to the first aspect, wherein at least one of the first electrode and the second electrode penetrates in the thickness direction and the gas flows therethrough. A hole is formed.

  According to invention of Claim 2, gas is supplied between the 1st electrode and the 2nd electrode through the through-hole formed in the 1st electrode, and is further formed in the 2nd electrode. Between the first electrode and the second electrode and between the second electrode and the third electrode. Gas can be easily supplied. As a result, discharge plasma can be easily generated. Further, the gas concentration between the first electrode and the second electrode and the gas concentration between the second electrode and the third electrode can be made substantially uniform. Thereby, even when each electrode is set to a predetermined size or more, the large area of the object to be processed can be processed without any spots, and the processing accuracy of the object to be processed can be improved.

  According to a third aspect of the present invention, there is provided a first electrode to which a high frequency voltage is applied, a second electrode which is disposed so as to face the first electrode and is grounded, and the second electrode. A third electrode disposed to face the electrode and to which a high-frequency voltage is applied; a fourth electrode disposed to face the third electrode and grounded; and A fifth electrode which is disposed so as to face the four electrodes and is grounded, a high-frequency power source which applies a high-frequency voltage to the first electrode and the third electrode, and the first electrode, Between the second electrode, between the second electrode and the third electrode, between the third electrode and the fourth electrode, and between the fourth electrode and the fifth electrode And a gas supply means for supplying a gas to be converted into plasma, That.

  According to invention of Claim 3, the to-be-processed object which is the object of a process is arrange | positioned between the 4th electrode and the 5th electrode. Then, by the gas supply means, between the first electrode and the second electrode, between the second electrode and the third electrode, between the third electrode and the fourth electrode, and the fourth electrode. A gas to be converted into plasma is supplied between the first electrode and the fifth electrode. When a gas to be converted into plasma is supplied between the electrodes, the first electrode and the second electrode, the second electrode and the third electrode, the third electrode and the fourth electrode, And between the fourth electrode and the fifth electrode are filled with gas.

  Thereafter, for example, a voltage is applied to the first electrode and the third electrode by a high-frequency power source. When a high-frequency voltage is applied to the first electrode and the third electrode, the second electrode is grounded, so that the first electrode and the second electrode are connected, and the third electrode and the third electrode are connected. A potential difference is generated between the two electrodes. Thereby, plasma is generated between the first electrode and the second electrode, and between the third electrode and the second electrode. Similarly, when a high-frequency voltage is applied to the third electrode, the fourth electrode is grounded, so that a potential difference is generated between the third electrode and the fourth electrode. Thereby, plasma is also generated between the third electrode and the fourth electrode.

  Here, since the fourth electrode is connected to the ground, the initial potential of the fourth electrode is 0 V. However, when plasma is generated between the third electrode and the fourth electrode, A slight potential is generated at the four electrodes.

  When a slight potential is generated in the fourth electrode, the fifth electrode is grounded, so that a potential difference occurs between the fourth electrode and the fifth electrode, and the fourth electrode and the fifth electrode Plasma is also generated between the two. At this time, the potential of the plasma generated between the fourth electrode and the fifth electrode is such that the potential difference between the fourth electrode and the fifth electrode is between the third electrode and the fourth electrode. Therefore, the potential of the plasma generated between the third electrode and the fourth electrode is much lower. Then, the object to be processed disposed between the fourth electrode and the fifth electrode is processed by plasma having a remarkably low potential.

  As described above, according to the present invention, the object to be processed is processed by the plasma having a remarkably low potential, so that plasma damage to the object to be processed can be greatly reduced. In addition, since the potential difference between the fourth electrode and the fifth electrode on which the target object is disposed is small, it is possible to prevent electrostatic breakdown from occurring. Furthermore, as described above, the structure of the discharge plasma processing apparatus is simple, and the manufacturing cost of the apparatus can be reduced.

  In particular, in addition to the gas that is directly supplied between the electrodes, a gas that has been converted into plasma between the first electrode and the second electrode flows between the lower second electrode and the third electrode. Therefore, the plasma between the second electrode and the third electrode has higher excitation efficiency than the plasma between the first electrode and the second electrode. Sequentially, the gas converted into plasma between the second electrode and the third electrode flows while being gradually excited between the third electrode and the fourth electrode, and the third electrode and the fourth electrode Since the gas converted into plasma between the fourth electrode and the fifth electrode flows while being gradually excited between the fourth electrode and the fifth electrode, the plasma between the fourth electrode and the fifth electrode has an electric potential. Despite being low, the plasma has high excitation efficiency.

  In particular, only by setting each electrode to a predetermined size or more, the discharge area to the object to be processed is increased, and a large area of the object to be processed can be collectively processed.

  Further, by supplying different types of gases between the respective electrodes, it is possible to perform an optimum treatment in accordance with the physicochemical properties of the object to be treated and the degree of treatment.

  Furthermore, by applying different high-frequency voltages to the first electrode and the third electrode, it is possible to realize a treatment according to the physicochemical properties of the object to be treated and the degree of treatment.

  According to a fourth aspect of the present invention, there is provided the discharge plasma processing apparatus according to the third aspect, wherein at least one of the first electrode, the second electrode, the third electrode, and the fourth electrode is used. Is characterized in that a through-hole is formed which penetrates in the thickness direction and through which the gas flows.

  According to the fourth aspect of the present invention, the gas is uniformly supplied between the first electrode and the second electrode through the through hole formed in the first electrode. Thereby, plasma is generated between the first electrode and the second electrode. Further, gas is supplied between the second electrode and the third electrode through a through hole formed in the second electrode. Thereby, plasma is generated between the second electrode and the third electrode. In addition, gas is supplied between the third electrode and the fourth electrode through a through hole formed in the third electrode. Thereby, plasma is generated between the third electrode and the fourth electrode. In addition, gas is supplied between the fourth electrode and the fifth electrode through a through hole formed in the fourth electrode. Thereby, plasma is generated between the fourth electrode and the fifth electrode.

  As described above, according to the present invention, the gas is sequentially excited between the electrodes by the plasma, so that it is disposed between the fourth electrode and the fifth electrode by the discharge plasma having high excitation efficiency. High-speed and stable processing can be performed on the object to be processed.

  ADVANTAGE OF THE INVENTION According to this invention, the discharge area to a to-be-processed object can be enlarged enough, and it can make it difficult to produce a plasma damage to a to-be-processed object.

  Next, a discharge plasma processing apparatus according to a first embodiment of the present invention will be described with reference to the drawings.

  As shown in FIG. 1, the discharge plasma processing apparatus 10 includes a flat plate-type first electrode 12. A high frequency voltage is applied to the first electrode 12 from a high frequency power source 14 described later. A flat plate-like second electrode 16 is disposed below the first electrode 12 so as to be parallel to the first electrode 12. The second electrode 16 is grounded (grounded) so that the initial potential is zero. A flat plate-type third electrode 18 is disposed below the second electrode 16 so as to be parallel to the second electrode 16. The third electrode 18 is grounded (grounded) so that the initial potential is zero.

  Further, the discharge plasma processing apparatus 10 includes a high frequency power supply 14. As described above, a high frequency voltage is applied to the first electrode 12 by the high frequency power source 14. Further, the discharge plasma processing apparatus 10 includes a gas unit 20. By this gas unit 20, a gas to be converted into plasma is supplied between the first electrode 12 and the second electrode 16 and between the second electrode 16 and the third electrode 18.

  As described above, in the discharge plasma processing apparatus 10 of the present embodiment, the three electrodes 12, 16, and 18 are arranged in parallel to each other, and the first electrode 12 includes the high-frequency power source. A high frequency voltage is applied from 14.

  Next, the operation of the discharge plasma processing apparatus 10 according to the present embodiment will be described.

  As shown in FIG. 1, an object 22 to be processed is disposed between the second electrode 16 and the third electrode 18. The gas unit 20 supplies a gas to be converted into plasma between the first electrode 12 and the second electrode 16 and between the second electrode 16 and the third electrode 18. When a gas to be converted into plasma is supplied between the first electrode 12 and the second electrode 16 and between the second electrode 16 and the third electrode 18, and between the first electrode 12 and the second electrode 16, The space between the second electrode 16 and the third electrode 18 is filled with gas.

  Thereafter, a high frequency voltage is applied to the first electrode 12 by the high frequency power source 14. When a high frequency voltage is applied to the first electrode 12, a potential difference is generated between the first electrode 12 and the second electrode 16 because the second electrode 16 is grounded. Thereby, plasma P <b> 1 is generated between the first electrode 12 and the second electrode 16.

  Here, since the second electrode 16 is grounded (grounded), the initial potential of the second electrode 16 is 0V, but plasma P1 is generated between the first electrode 12 and the second electrode 16. As a result, a slight potential is generated at the second electrode 16.

  When a slight potential is generated in the second electrode 16, the third electrode 18 is grounded, so that a potential difference is generated between the second electrode 16 and the third electrode 18. Plasma P2 is also generated between the electrodes 18. At this time, the potential of the plasma P2 generated between the second electrode 16 and the third electrode 18 is such that the potential difference between the second electrode 16 and the third electrode 18 is the difference between the first electrode 12 and the second electrode 16. The potential difference between the first electrode 12 and the second electrode 16 is much lower than the potential difference between the first electrode 12 and the second electrode 16.

  Then, the object 22 to be processed disposed between the second electrode 16 and the third electrode 18 is processed by the plasma P2 having a remarkably low potential.

  As described above, according to the discharge plasma processing apparatus 10 of the present embodiment, the processing of the object 22 is performed by the plasma P <b> 2 having a remarkably low potential, so that plasma damage to the object 22 is greatly reduced. be able to. Further, since the potential difference between the second electrode 16 and the third electrode 18 on which the object 22 is disposed is small, it is possible to prevent electrostatic breakdown from occurring. Furthermore, as described above, the structure of the discharge plasma processing apparatus 10 is simple, and the manufacturing cost of the apparatus can be reduced.

  In particular, simply setting each electrode 12, 16, 18 to a predetermined size or more increases the discharge area to the object to be processed 22, and the large area of the object to be processed 22 can be processed collectively.

  As shown in FIG. 1, in the present embodiment, the configuration in which all the electrodes 12, 16, 18 are all laminated in series is shown. However, the present invention is not limited to this configuration, and a part thereof is laminated in parallel. It may be a That is, as shown in FIG. 2, the first electrode 12 and the second electrode 16 are divided, and a plurality of pairs of the first electrode 12A and the second electrode 16A (the first electrode 12B and the second electrode 16B) (see FIG. 2). 2 may be a configuration provided with two pairs).

  Next, a discharge plasma processing apparatus according to a second embodiment of the present invention will be described.

  As shown in FIG. 3, the discharge plasma processing apparatus 30 includes a flat plate-type first electrode 32. A high frequency voltage is applied to the first electrode 32 from a high frequency power source 34 described later. A flat plate-like second electrode 36 is disposed below the first electrode 32 so as to be parallel to the first electrode 32. The second electrode 36 is grounded (grounded) so that the initial potential becomes zero. A flat plate-type third electrode 38 is disposed below the second electrode 36 so as to be parallel to the second electrode 36. A high frequency voltage is applied to the third electrode 38 from a high frequency power source 34 described later. A flat plate-like fourth electrode 40 is disposed below the third electrode 38 so as to be parallel to the third electrode 38. The fourth electrode 40 is grounded (grounded) so that the initial potential is zero. A flat plate-like fifth electrode 42 is disposed below the fourth electrode 40 so as to be parallel to the fourth electrode 40. The fifth electrode 42 is grounded (grounded) so that the initial potential is zero.

  Further, the discharge plasma processing apparatus 30 includes a high frequency power supply 34. As described above, a high frequency voltage is applied to the first electrode 32 and the second electrode 36 by the high frequency power source 34. Further, the discharge plasma processing apparatus 30 includes a gas unit 44. By this gas unit 44, between the first electrode 32 and the second electrode 36, between the second electrode 36 and the third electrode 38, between the third electrode 38 and the fourth electrode 40, and between the fourth electrode 40 and A gas to be converted into plasma is supplied between the fifth electrode 42.

  As described above, the discharge plasma processing apparatus 30 of the present embodiment is a multi-stage type in which the five electrodes 32, 36, 38, 40, and 42 are arranged so as to be stacked in parallel with each other. A high frequency voltage is applied to the first electrode 32 and the third electrode 38 from the high frequency power source 34.

  Next, the operation of the discharge plasma processing apparatus 30 according to the second embodiment of the present invention will be described.

  As shown in FIG. 3, an object 48 to be processed is disposed between the fourth electrode 40 and the fifth electrode 42. Then, by the gas unit 44, between the first electrode 32 and the second electrode 36, between the second electrode 36 and the third electrode 38, between the third electrode 38 and the fourth electrode 40, and the fourth electrode 40. A gas to be converted into plasma is supplied between the first electrode 5 and the fifth electrode 42. When a gas to be converted into plasma is supplied between the electrodes, the first electrode 32 and the second electrode 36, the second electrode 36 and the third electrode 38, the third electrode 38 and the fourth electrode 40, And between the fourth electrode 40 and the fifth electrode 42 are filled with gas.

  Thereafter, a high frequency voltage is applied to the first electrode 32 and the third electrode 38 by the high frequency power source 34. When a high frequency voltage is applied to the first electrode 32 and the third electrode 38, the second electrode 36 is grounded, so that the first electrode 32 and the second electrode 36, and the second electrode 36. A potential difference is generated between the first electrode 38 and the third electrode 38. Thereby, plasma P1 is generated between the first electrode 32 and the second electrode 36, and plasma P2 is generated between the second electrode 36 and the third electrode 38, respectively. Similarly, when a high-frequency voltage is applied to the third electrode 38, the fourth electrode 40 is grounded, so that a potential difference is generated between the third electrode 38 and the fourth electrode 40. Thereby, plasma P3 is generated between the third electrode 38 and the fourth electrode 40.

  When plasma P <b> 3 is generated between the third electrode 38 and the fourth electrode 40, a slight potential is generated at the fourth electrode 40. Since the fifth electrode 42 is grounded (grounded), a potential difference is generated between the fourth electrode 40 and the fifth electrode 42, and plasma P 4 is also generated between the fourth electrode 40 and the fifth electrode 42. . At this time, the potential of the plasma P4 generated between the fourth electrode 40 and the fifth electrode 42 is such that the potential difference between the fourth electrode 40 and the fifth electrode 42 is between the third electrode 38 and the fourth electrode 40. The potential difference between the third electrode 38 and the fourth electrode 40 is much lower than the potential difference of the plasma P2 generated between the third electrode 38 and the fourth electrode 40.

  Here, the gas excited by the plasmas P1, P2, and P3 between the electrodes sequentially passes between the electrodes and flows between the fourth electrode 40 and the fifth electrode 42. Since this gas is an excited gas, it is easily excited between the fourth electrode 40 and the fifth electrode 42, so that the plasma P4 is easily generated even with a remarkably low potential difference.

  Then, the object to be processed 48 disposed between the fourth electrode 40 and the fifth electrode 42 is processed by the plasma P4 having a remarkably low potential.

  As described above, according to the discharge plasma processing apparatus 30 of the present embodiment, the object to be processed 48 is processed by the plasma P4 having a remarkably low potential, so that plasma damage to the object to be processed 48 is greatly reduced. be able to. Further, since the potential difference between the fourth electrode 40 and the fifth electrode 42 is small, it is possible to prevent electrostatic breakdown from occurring. Furthermore, as described above, the structure of the discharge plasma processing apparatus 30 is simple, and the manufacturing cost of the apparatus can be reduced.

  In particular, simply by setting each electrode 32, 36, 38, 40, 42 to a predetermined size or more, the discharge area to the object to be processed 48 becomes large, and a large area of the object to be processed 48 is processed collectively. be able to.

  Further, by supplying different types of gases between the electrodes, it is possible to perform processing in an optimal plasma state in accordance with the physicochemical properties of the object to be processed 48.

  In addition, by applying different high frequency voltages to the first electrode 32 and the third electrode 38, it is possible to realize processing in an optimum plasma state in accordance with the physicochemical properties of the object 48 and the degree of processing. it can.

Next, a discharge plasma processing apparatus according to a third embodiment of the present invention will be described.
In addition, about the structure which overlaps with the structure of the discharge plasma processing apparatus 10 of 1st Embodiment, a same sign is attached | subjected and description is abbreviate | omitted suitably. In addition, the description of the operational effects similar to the operational effects of the discharge plasma processing apparatus 10 of the first embodiment will be omitted as appropriate.

  As shown in FIG. 4, the discharge plasma processing apparatus 50 of this embodiment is set based on the discharge plasma processing apparatus 10 of the first embodiment.

  That is, the first electrode 12 and the second electrode 16 of the discharge plasma processing apparatus 50 of the present embodiment are formed with a plurality of through holes 52 penetrating in the thickness direction. A gas is supplied from the gas unit 20 to the through hole 52 formed in the first electrode 12.

  According to the discharge plasma processing apparatus 50 of the present embodiment, gas is supplied between the first electrode 12 and the second electrode 16 through the through-hole 52 formed in the first electrode 12 as shown in FIG. In addition, since it is supplied between the second electrode 16 and the third electrode 18 through the through hole 52 formed in the second electrode 16, the second electrode 16 and the second electrode 16 and the second electrode 16 are provided. A gas can be easily supplied uniformly between the electrode 16 and the third electrode 18. As a result, discharge plasma can be generated easily and uniformly. Further, the gas concentration between the first electrode 12 and the second electrode 16 and the gas concentration between the second electrode 16 and the third electrode 18 can be made substantially uniform. Thereby, even when each electrode 12, 16, 18 is set to a predetermined size or more, a large area of the object to be processed 22 can be processed without unevenness, and the processing accuracy of the object to be processed 22 can be improved. it can.

Next, a discharge plasma processing apparatus according to a fourth embodiment of the present invention will be described.
In addition, about the structure which overlaps with the structure of the discharge plasma processing apparatus 30 of 2nd Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably. In addition, the description of the operational effects similar to those of the discharge plasma processing apparatus 30 of the second embodiment will be omitted as appropriate.

  As shown in FIG. 5, the discharge plasma processing apparatus 60 of the present embodiment is set based on the discharge plasma processing apparatus 30 of the second embodiment.

  That is, the first electrode 32, the second electrode 36, the third electrode 38, and the fourth electrode 40 of the discharge plasma processing apparatus 60 of the present embodiment are each formed with a plurality of through holes 62 that penetrate in the thickness direction. Yes. A gas is supplied from the gas unit 44 to the through hole 62 formed in the first electrode 32.

  According to the discharge plasma processing apparatus 60 of the present embodiment, as shown in FIG. 5, the gas passes through the through hole 62 formed in the first electrode 32 and is uniformly between the first electrode 32 and the second electrode 36. To be supplied. Thereby, a uniform plasma P1 is generated between the first electrode 32 and the second electrode 36. Next, the gas is supplied uniformly between the second electrode 36 and the third electrode 38 through the through-hole 62 formed in the second electrode 36. Thereby, uniform plasma P2 is generated between the second electrode 36 and the third electrode 38. Next, the gas is supplied uniformly between the third electrode 38 and the fourth electrode 40 through the through hole 62 formed in the third electrode 38. Thereby, a uniform plasma P3 is generated between the third electrode 38 and the fourth electrode 40. Next, the gas is uniformly supplied between the fourth electrode 40 and the fifth electrode 42 through the through hole 62 formed in the fourth electrode 40. Thereby, a uniform plasma P4 is generated between the fourth electrode 40 and the fifth electrode 42.

  As described above, according to the discharge plasma processing apparatus 60 of the present embodiment, the gas is sequentially excited between the electrodes by the plasma, so that the fourth electrode 40 and the fifth electrode are formed by the uniform discharge plasma with high excitation efficiency. A uniform and stable treatment can be performed at a high speed on the workpiece 48 disposed between the electrodes 42.

1 is a configuration diagram of a discharge plasma processing apparatus according to a first embodiment of the present invention. It is a block diagram of the discharge plasma processing apparatus which is a modification of the discharge plasma processing apparatus which concerns on 1st Embodiment of this invention. It is a block diagram of the discharge plasma processing apparatus which concerns on 2nd Embodiment of this invention. It is a block diagram of the discharge plasma processing apparatus which concerns on 3rd Embodiment of this invention. It is a block diagram of the discharge plasma processing apparatus which concerns on 4th Embodiment of this invention.

Explanation of symbols

10, 50 Discharge plasma treatment apparatus 12 First electrode (first electrode)
14 High-frequency power supply 16 Second electrode (second electrode)
18 Third electrode (third electrode)
20 Gas unit (gas supply means)
30, 60 Discharge plasma treatment apparatus 32 First electrode (first electrode)
34 High frequency power supply 36 Second electrode (second electrode)
38 Third electrode (third electrode)
40 Fourth electrode (fourth electrode)
42 Fifth electrode (fifth electrode)
44 Gas unit (gas supply means)
52 Through hole 62 Through hole

Claims (4)

A first electrode to which a high-frequency voltage is applied;
A second electrode disposed to face the first electrode and grounded;
A third electrode arranged to face the second electrode and grounded;
A high frequency power supply for applying a high frequency voltage to the first electrode;
Gas supply means for supplying a gas to be converted into plasma between the first electrode and the second electrode and between the second electrode and the third electrode;
A discharge plasma processing apparatus comprising:   2. The discharge plasma processing apparatus according to claim 1, wherein a through-hole penetrating in a thickness direction and through which the gas flows is formed in at least one of the first electrode and the second electrode. . A first electrode to which a high-frequency voltage is applied;
A second electrode disposed to face the first electrode and grounded;
A third electrode disposed to face the second electrode and to which a high-frequency voltage is applied;
A fourth electrode disposed to face the third electrode and connected to ground;
A fifth electrode disposed opposite to the fourth electrode and connected to ground;
A high frequency power source for applying a high frequency voltage to the first electrode and the third electrode;
Between the first electrode and the second electrode, between the second electrode and the third electrode, between the third electrode and the fourth electrode, and the fourth electrode Gas supply means for supplying a gas to be converted into plasma between the first electrode and the fifth electrode;
A discharge plasma processing apparatus comprising: At least one of the first electrode, the second electrode, the third electrode, and the fourth electrode is formed with a through-hole penetrating in the thickness direction and through which the gas flows. The discharge plasma processing apparatus according to claim 3.

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