JP2007140461A - Resist underlayer film material and pattern forming method using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a resist underlayer film material for a multilayer resist process improved in ashing speed after substrate etching, whereby a substrate just beneath a resist underlayer film can be prevented from changing in quality during ashing. <P>SOLUTION: The resist underlayer film material of a multilayer resist film for use in lithography contains a polymer having a repeating unit (A) derived from a monomer containing ≥10 mass% of hydrogen and ≥70 mass% of carbon and a repeating unit (B) having a hydroxy group or an epoxy ring. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a resist underlayer film material of a multilayer resist film used for microfabrication in a manufacturing process of a semiconductor element or the like, and in particular, far ultraviolet light, KrF excimer laser light (248 nm), ArF excimer laser light (193 nm), F ₂ laser. The present invention relates to a resist underlayer film material of a multilayer resist film suitable for exposure with light (157 nm), Kr ₂ laser light (146 nm), Ar ₂ laser light (126 nm), soft X-ray, electron beam, ion beam, X-ray or the like. Furthermore, the present invention relates to a method for forming a pattern on a substrate by lithography using the same.

  In recent years, with the increasing integration and speed of LSIs, there is a need for finer pattern rules. In lithography using light exposure, which is currently used as a general-purpose technology, the essence derived from the wavelength of the light source The resolution limit is approaching.

  As a light source for lithography used in forming a resist pattern, light exposure using a g-ray (436 nm) or i-line (365 nm) of a mercury lamp as a light source is widely used, but as a means for further miniaturization. A method of shortening the wavelength of exposure light has been considered effective. For this reason, for example, in a mass production process of a 64-Mbit DRAM processing method, a short wavelength KrF excimer laser (248 nm) is used as an exposure light source instead of i-line (365 nm). However, in order to manufacture a DRAM having a degree of integration of 1G or more, which requires a finer processing technique (for example, a processing dimension of 0.13 μm or less), a light source with a shorter wavelength is required, particularly an ArF excimer laser (193 nm). Lithography using a material has been studied.

On the other hand, conventionally, it is known that a multilayer resist process is excellent for forming a high aspect ratio pattern on a stepped substrate such as a damascene process. This multi-layer resist process has been studied in order to overcome a decrease in etching resistance associated with the progress of thinning of a resist film with the rapid progress of finer pattern rules in recent years.
Such a multilayer resist process includes a two-layer resist process using a resist upper layer film containing silicon atoms on the resist lower layer film, and a resist intermediate containing silicon atoms between the resist upper layer film and the resist lower layer film. There is a three-layer resist process in which a layer film is applied (see, for example, Non-Patent Document 1: J. Vac. Sci. Technol., 16 (6), Nov./Dec. 1979).

  Of these, the silicon-containing resist intermediate layer film of the three-layer resist process may or may not have a function as an antireflection film, but the substrate reflection cannot be sufficiently suppressed. May further apply a normal organic antireflection film on the silicon-containing resist intermediate film. Therefore, the silicon-containing resist intermediate layer film having the antireflection function is more advantageous in terms of process simplicity because the organic antireflection film is unnecessary.

In addition, the resist underlayer film of the three-layer resist process is required to have high dry etching resistance during processing of the substrate to be processed, an antireflection film function for suppressing substrate reflection, embedding characteristics in a high aspect substrate, and the like. In particular, materials having a high carbon content are being studied in order to improve dry etching resistance during substrate processing.
Here, as a lower layer film for a multilayer film process, a lower layer film material using a polymer having a hydroxy group as a crosslinking site shown in Patent Documents 1 and 2: WO 00/53645 pamphlet and WO 00/54105 pamphlet, And Patent Document 3: From a polymer having a repeating unit having a cyclic ether group such as an epoxy group, a repeating unit having an alicyclic group, and a repeating unit having an aromatic group, as shown in US Pat. No. 6,818,381. An underlayer film material has been proposed. Patent Document 4: JP 2002-047430 discloses a lower layer film material using a low molecular weight hydroxy group-containing resin, Patent Document 5: JP 2002-014474 A discloses a novolak resin obtained by condensing naphthol and formaldehyde. Pattern forming method characterized by applying as a film, Patent Document 6: Japanese Patent Laid-Open No. 2002-305187 discloses a pattern forming method characterized by using a lower layer film having a carbon atom ratio of 80 mass% or more, Patent Document 7: Japanese Patent Application Laid-Open No. 2004-317930 proposes a lower layer film material having a low molecular weight content of 500 or less and a content of 1% or less.

By the way, an insulating film having a dielectric constant lower than that of a silicon oxide film has been used since the 90 nm process, and a damascene process for embedding a copper wiring having a high electric conductivity has been applied. The dielectric constant of the insulating film is further lowered, and materials having a relative dielectric constant of 2.5 or less are being studied at 45 nm. Porous silica is promising as a material having a relative dielectric constant of 2.5 or less. Porous silica significantly reduces the dielectric constant by forming air holes with a dielectric constant of 1.0 in the film. Initially, there was a drawback that the mechanical strength decreased due to the presence of pores in the film, but the mechanical strength decrease was minimized by optimizing the hole structure, size and distribution, or improving the silica. Yes. However, a problem with porous silica is that basic substances are likely to be adsorbed by chemical treatment such as cleaning of the substrate. This basic substance is generated from the porous silica substrate during the lithography process to deactivate the acid in the resist material, and in the positive resist material, undissolved or footing occurs where it should be dissolved. There was a problem of poisoning.
A multilayer resist film is effective as an anti-poisoning measure. In particular, an acid-crosslinked underlayer film has a high effect of preventing diffusion of a substance that is a source of poisoning of a basic substance into a resist layer.

  Further, the surface of the resist underlayer film after the porous silica film is processed by dry etching is covered with a fluorocarbon layer that has been altered by a fluorocarbon dry etching gas. In this case, since the fluorocarbon layer is thermally and chemically stable and does not dissolve in the stripping solution, it is difficult to strip the resist underlayer film by chemical treatment. Therefore, the resist underlayer film is peeled off by ashing with oxygen gas, ammonia gas, hydrogen gas, etc., but ashing with high-concentration gas for a long time is preferable because it alters the surface of the porous silica and lowers the dielectric constant. Absent.

Therefore, in particular, a material having a high ashing speed is required as an embedding resist underlayer film directly on the porous silica.
Examples of the material having a fast ashing include a material having low dry etching resistance. For example, an acrylic or polyester material used for an organic antireflection film, which does not have an alicyclic group for increasing etching resistance as used for an ArF resist material. However, in this case, although the ashing speed is fast, the dry etching resistance when processing a low dielectric film is low, and there is a problem that a dimensional conversion difference occurs during dry etching. For this reason, there is a demand for a material having high dry etching resistance during substrate processing and a high ashing speed for removing the lower layer film after substrate processing.

J. et al. Vac. Sci. Technol. , 16 (6), Nov. / Dec. 1979 International Publication No. 00/53645 Pamphlet International Publication No. 00/54105 Pamphlet US Pat. No. 6,818,381 JP 2002-047430 A JP 2002-014474 A JP 2002-305187 A JP 2004-317930 A

  The present invention has been made in view of such problems, and is a resist underlayer film material for a multilayer resist process, which has high etching resistance in substrate etching and high ashing speed after substrate etching. An object of the present invention is to provide a resist underlayer film material capable of preventing the substrate immediately below from being altered during ashing, and a method for forming a pattern on the substrate by lithography using the resist underlayer film material.

（式中、Ｒ¹は炭素数４〜４０の直鎖状、分岐状又は環状のアルキル基又はアルケニル基であり、ヒドロキシ基又はエーテル基を含んでいてもよく、Ｒ²は水素原子又はメチル基、Ｒ³は炭素数１８〜４０の直鎖状、分岐状又は環状のアルキル基であり、０≦ａ１≦１．０、０≦ａ２≦１．０、０．１≦ａ１＋ａ２≦１．０の範囲である。） The present invention has been made to solve the above-mentioned problems, and is a resist underlayer film material of a multilayer resist film used in lithography, which is a monomer containing at least 10% by mass of hydrogen and 70% by mass or more of carbon. Provided is a resist underlayer film material comprising a polymer having a repeating unit (A) derived from and a repeating unit (B) having a hydroxy group or an epoxy ring (claim 1). In this case, the repeating unit (A) is preferably 10 mol% or more based on all repeating units (Claim 2). Such a polymer can contain a repeating unit (A) represented by the following general formula (1) (Claim 3).

(In the formula, R ¹ is a linear, branched or cyclic alkyl group or alkenyl group having 4 to 40 carbon atoms, which may contain a hydroxy group or an ether group, and R ² is a hydrogen atom or a methyl group. , R ³ is a linear, branched or cyclic alkyl group having 18 to 40 carbon atoms, and 0 ≦ a1 ≦ 1.0, 0 ≦ a2 ≦ 1.0, 0.1 ≦ a1 + a2 ≦ 1.0 Range.)

  Thus, the resist underlayer film material of the present invention contains the polymer having the above repeating unit as a base resin. A resist underlayer film formed from such a resist underlayer film material has high etching resistance in substrate processing and has a high ashing speed after substrate etching. For this reason, the resist underlayer film can be peeled off easily and quickly after the substrate etching. As described above, the resist underlayer film of the present invention requires a short ashing time, and therefore, even when the resist underlayer film is porous silica, it is possible to prevent alteration of the surface and to lower the relative dielectric constant. Can be minimized.

  Further, the resist underlayer film material of the present invention may further contain an organic solvent (claim 4).

  An organic solvent can be used for the resist underlayer film material of the present invention, and the polymer having the repeating unit is dissolved in the organic solvent.

  The resist underlayer film material of the present invention preferably further contains one or more of an acid generator and a crosslinking agent.

  As described above, the resist underlayer film material of the present invention contains one or more of a crosslinking agent and an acid generator, thereby promoting a crosslinking reaction in the resist underlayer film by baking after being applied to the substrate. You can do that. Therefore, the resist underlayer film formed from such a material is less likely to be intermixed with the resist upper layer film or the resist intermediate layer film, and the low molecular component is less diffused into the resist upper layer film or the like.

  The present invention is also a method for forming a pattern on a substrate by lithography, wherein at least a resist underlayer film is formed on the substrate using the resist underlayer film material of the present invention, and a photoresist is formed on the underlayer film. A resist upper layer film is formed from the composition to form a two-layer resist film, the pattern circuit region of the two-layer resist film is exposed, and then developed with a developer to form a resist pattern on the resist upper layer film. The resist underlayer film formed by etching the resist underlayer film is etched, and the substrate is etched using at least the pattern formed resist underlayer film as a mask to form a pattern on the substrate. Further, the resist underlayer film is formed by ashing. A pattern forming method characterized in that the film is peeled off (Claim 6).

  The resist underlayer film material of the present invention can thus be used as a material for forming a resist underlayer film in a two-layer resist process. As described above, since the resist underlayer film of the present invention has a high ashing speed after etching the substrate, the ashing time can be short. For this reason, even when the resist underlayer film is porous silica, it is possible to prevent the surface of the porous silica from being altered by the gas used in ashing, and to minimize the decrease in the dielectric constant. it can.

  The present invention is also a method for forming a pattern on a substrate by lithography, wherein at least a resist underlayer film is formed on the substrate using the resist underlayer film material of the present invention, and silicon atoms are formed on the underlayer film. A resist intermediate layer film containing a resist is formed, a resist upper layer film of a photoresist composition is formed on the intermediate layer film to form a three-layer resist film, and a pattern circuit region of the resist three-layer film is exposed. Thereafter, development is performed with a developer to form a resist pattern on the resist upper layer film, and the resist intermediate layer film is etched using the resist upper layer film on which the pattern is formed as a mask, so that at least the resist intermediate layer film on which the pattern is formed is formed. Etch the resist underlayer using the mask, and etch the substrate using at least the patterned resist underlayer as a mask. Forming a turn, further, to provide a pattern forming method, which comprises carrying out the peeling of the resist underlayer film by ashing (claim 7).

  Thus, the resist underlayer film material of the present invention can also be used as a material for forming a resist underlayer film in a three-layer resist process. In the three-layer resist process, it is also possible to use a single-layer resist with high resolution as the resist upper layer film. For this reason, it is possible to form a pattern on the resist upper layer film and consequently the substrate with higher accuracy.

  The resist underlayer film material of the present invention contains, as a base resin, at least a polymer containing a repeating unit derived from a monomer containing 10 mass% or more of hydrogen and 70 mass% or more of carbon and a repeating unit having a hydroxy group or an epoxy ring. Therefore, the etching resistance in the substrate etching is high, and the ashing speed after the substrate etching is fast. For this reason, since the resist underlayer film can be peeled off in a short time by ashing after the substrate processing, there is little possibility that the substrate surface is altered or the relative dielectric constant is lowered by the ashing for a long time.

Hereinafter, although embodiment of this invention is described, this invention is not limited to these.
The present inventors have intensively studied to develop a resist underlayer film material having a low substrate etching rate, that is, high etching resistance and a high ashing rate after the substrate etching. In this case, the characteristics that the etching rate is low and the ashing speed is high can be said to be contradictory characteristics. As a result of various experiments, the present inventors have found that a material with a high proportion of oxygen or nitrogen or a material with a high proportion of hydrogen is fast in ashing. However, a material having a high ratio of oxygen and nitrogen reduces the etching rate. A high carbon ratio is necessary to increase the etching resistance. When the ratio of oxygen and nitrogen increases, the ratio of carbon having a smaller atomic weight than these rapidly decreases, and the etching resistance decreases. On the other hand, even if the proportion of hydrogen with a small atomic weight increases, the decrease in the proportion of carbon is slight. Here, ashing generally uses a gas such as oxygen, hydrogen, or ammonia. In particular, ashing with hydrogen gas is widely used because damage to the underlying low dielectric constant film surface is small. Since ashing by hydrogen is a reduction reaction, the ashing speed is higher when the proportion of hydrogen is higher as the lower layer material.
As described above, conventionally, a resist underlayer film having high resistance to dry etching during substrate processing has been studied. In order to increase dry etching resistance during substrate processing, a material having a high carbon ratio has been preferred. However, the resist underlayer film having improved dry etching resistance by increasing the carbon ratio has a disadvantage that the ashing speed is slow.
As a result of the study, the present inventors have found that a material having a high carbon ratio and a high hydrogen ratio is suitable as a material having high etching resistance and high ashing speed.

（式中、Ｒ¹は炭素数４〜４０の直鎖状、分岐状又は環状のアルキル基又はアルケニル基であり、ヒドロキシ基又はエーテル基を含んでいてもよく、Ｒ²は水素原子又はメチル基、Ｒ³は炭素数１８〜４０の直鎖状、分岐状又は環状のアルキル基であり、０≦ａ１≦１．０、０≦ａ２≦１．０、０．１≦ａ１＋ａ２≦１．０の範囲である。） Examples of the material having a high hydrogen ratio include an alkyl group. In order to increase etching resistance, a cyclic alkyl group is preferred. An aryl group having a double bond such as an aromatic group has a reduced hydrogen ratio. Vinyl ether is more advantageous than acrylic compounds to reduce oxygen that leads to a decrease in etching resistance.
Therefore, by using a repeating unit derived from vinyl ether or a (meth) acrylic compound having an alkyl group having a large number of carbon atoms as a repeating unit constituting the base resin, a material having high etching resistance and high ashing speed can be designed.
Characteristics required for the lower layer film used for the multilayer film include heat resistance in addition to etching resistance and ashing speed. The baking for application and crosslinking of the silicon-containing intermediate layer requires heating at 200 to 300 ° C., and the production of the silicon-containing intermediate layer by CVD involves the application of heat at 300 to 400 ° C. The underlayer film must withstand heat without decomposition.
An example of the crosslinking group having high heat resistance is an epoxy group. Further, in terms of heat resistance, the alkyl groups R ¹ and R ³ represented by the following general formula (1) are preferably cyclic alicyclic groups.

(In the formula, R ¹ is a linear, branched or cyclic alkyl group or alkenyl group having 4 to 40 carbon atoms, which may contain a hydroxy group or an ether group, and R ² is a hydrogen atom or a methyl group. , R ³ is a linear, branched or cyclic alkyl group having 18 to 40 carbon atoms, and 0 ≦ a1 ≦ 1.0, 0 ≦ a2 ≦ 1.0, 0.1 ≦ a1 + a2 ≦ 1.0 Range.)

  In view of the above, the inventors of the present invention provide a polymer in which the resist underlayer film material has at least an alicyclic group having a higher hydrogen ratio than an aromatic group, and in particular a vinyl ether having a lower oxygen ratio as a repeating unit. The resist underlayer film formed from the resist underlayer film material has a low etching rate as long as it contains (meth) acrylate having a large number of carbon atoms and a high proportion of hydrogen as a repeating unit. The present invention has been completed by conceiving that the ashing speed is high, and that peeling on porous silica can be carried out easily and quickly.

  That is, the resist underlayer film material of the present invention is a resist underlayer film material of a multilayer resist film used in lithography, and is a repeating unit (A) derived from a monomer containing 10 mass% or more of hydrogen and 70 mass% or more of carbon. And a polymer having a repeating unit (B) having a hydroxy group or an epoxy ring as a base resin.

（式中、Ｒ¹は炭素数４〜４０の直鎖状、分岐状又は環状のアルキル基又はアルケニル基であり、ヒドロキシ基又はエーテル基を含んでいてもよく、Ｒ²は水素原子又はメチル基、Ｒ³は炭素数１８〜４０の直鎖状、分岐状又は環状のアルキル基であり、０≦ａ１≦１．０、０≦ａ２≦１．０、０．１≦ａ１＋ａ２≦１．０の範囲である。） Here, as the polymer, at least a polymer having vinyl ether as a repeating unit and / or (meth) acrylate having an alicyclic group having a large number of carbon atoms and a high proportion of hydrogen are included as a repeating unit (A). A polymer is preferable, and examples of the repeating unit (A) include those represented by the following general formula (1).

(In the formula, R ¹ is a linear, branched or cyclic alkyl group or alkenyl group having 4 to 40 carbon atoms, which may contain a hydroxy group or an ether group, and R ² is a hydrogen atom or a methyl group. , R ³ is a linear, branched or cyclic alkyl group having 18 to 40 carbon atoms, and 0 ≦ a1 ≦ 1.0, 0 ≦ a2 ≦ 1.0, 0.1 ≦ a1 + a2 ≦ 1.0 Range.)

  Here, the vinyl ether monomer which gives the repeating unit a1 in the general formula (1) can be specifically exemplified below.

  On the other hand, the (meth) acrylate monomer that gives the repeating unit a2 in the general formula (1) preferably has a terpene or steroid structure, and can be specifically exemplified below.

  Next, the monomer b1 which gives the repeating unit (B) having an epoxy group can be exemplified as follows.

Further, examples of the monomer b2 which gives the repeating unit (B) having a hydroxy group can be exemplified below.

The present invention includes a monomer that gives the repeating unit (A) represented by a1 and a2 in the general formula (1), a monomer b1 that gives a repeating unit (B) having an epoxy group, or a repeating unit (B) that has a hydroxy group. The lower layer film material is characterized in that a polymer compound obtained by copolymerizing the monomer b2 to be applied is used as a base resin, and examples of the copolymerizable monomer c include the following monomers.
As the characteristic of the following monomer c, there exists a characteristic which is excellent in copolymerizability with the vinyl ether monomer with low reactivity in radical polymerization.

  Furthermore, in order to increase the molecular weight, bifunctional olefins d such as vinyl ether and divinylbenzene exemplified below can be copolymerized.

  The copolymerization ratio of a1, a2, b1, b2, c, d is 0 ≦ a1 ≦ 1.0, 0 ≦ a2 ≦ 1.0, 0.1 ≦ a1 + a2 ≦ 1.0, 0 ≦ b1 ≦ 0.9. 0 ≦ b2 ≦ 0.9, 0 <b1 + b2 ≦ 0.9, particularly 0.1 ≦ b1 + b2 ≦ 0.9, 0 ≦ c ≦ 0.9, and 0 ≦ d ≦ 0.6 are preferably used. it can. More preferably 0 ≦ a1 ≦ 0.9, 0 ≦ a2 ≦ 0.9, 0.2 ≦ a1 + a2 ≦ 0.9, 0.2 ≦ b1 + b2 ≦ 0.9, 0 ≦ c ≦ 0.8, 0 ≦ d ≦ 0.5, more preferably 0 ≦ a1 ≦ 0.8, 0 ≦ a2 ≦ 0.8, 0.2 ≦ a1 + a2 ≦ 0.8, 0.2 ≦ b1 + b2 ≦ 0.8, 0 ≦ c ≦ 0. 7, 0 ≦ d ≦ 0.4.

In addition, the resist underlayer film material of the present invention blends, for example, cresol novolaks, styrene derivatives, allylbenzene derivatives, olefins such as ethylene, propylene, and butadiene, and polymers by metathesis ring-opening polymerization in addition to the above-mentioned polymers. You can also
When a hole having a high aspect ratio is formed on the substrate to be processed, it must be sufficiently filled up to the bottom of the hole when coating the lower layer film. In order to improve the embedding property, it is necessary to lower the glass transition point (Tg) of the polymer. In order to lower Tg, blending with the resin is effective, especially blending with a low-nucleate cresol novolac resin dramatically improves the hole filling properties.
In this case, the blend ratio is preferably 10 to 1,000 parts, more preferably 20 to 300 parts, with respect to 100 parts (mass part, hereinafter the same) of the polymer according to the present invention.

  The resist underlayer film material included as the base resin of the present invention is characterized by high etching resistance in substrate processing and high peeling speed in peeling by ashing after substrate processing. In particular, ashing peeling on a low dielectric constant film material such as porous silica is easy and quick.

  The resist underlayer film material of the present invention is used as a resist underlayer film for a multilayer resist process, in particular, a high energy ray having a wavelength of 300 nm or less, specifically 248 nm, 193 nm, 157 nm excimer laser, 3-20 nm soft X It can be suitably used for lithography using X-rays, electron beams, and X-rays.

  Moreover, you may add an organic solvent, an acid generator, a crosslinking agent, etc. to the resist underlayer film material of this invention so that it may demonstrate below.

  One of the performances required for the lower layer film is that there is no intermixing with the upper layer film and that there is no diffusion of low molecular components into the upper layer film [Proc. SPIE Vol. 2195, p225-229 (1994)]. In order to prevent these problems, a method is generally employed in which thermal crosslinking is performed by baking after spin coating of the lower layer film. Therefore, the polymer used for the lower layer film material of the present invention includes a repeating unit having an epoxy group. Furthermore, a crosslinking agent can also be added as an additive.

  Specific examples of the crosslinking agent that can be used in the present invention include a melamine compound, a guanamine compound, a glycoluril compound, or a urea compound substituted with at least one group selected from a methylol group, an alkoxymethyl group, and an acyloxymethyl group. Examples of the compound include a double bond such as an epoxy compound, an isocyanate compound, an azide compound, and an alkenyl ether group. These may be used as additives, but may be introduced as pendant groups in the polymer side chain. A compound containing a hydroxy group is also used as a crosslinking agent.

Among the above compounds, examples of the epoxy compound include tris (2,3-epoxypropyl) isocyanurate, trimethylolmethane triglycidyl ether, trimethylolpropane triglycidyl ether, triethylolethane triglycidyl ether, dicyclopentadiene dioxide. 1,2,5,6-diepoxycyclooctane, (R, R)-(+)-1,2,9,10-diepoxydecane, 1,2,7,8-diepoxyoctane, 3, 4-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, glycerol diglycidyl ether, glycerol propoxylate triglycidyl ether, trimethylolpropane triglycidyl ether triphenylol methane triglycidyl ether, tris Such as 2,3-epoxypropyl) isocyanurate are exemplified. Specific examples of the melamine compound include hexamethylol melamine, hexamethoxymethyl melamine, a compound in which 1 to 6 methylol groups of hexamethylol melamine are methoxymethylated, or a mixture thereof, hexamethoxyethyl melamine, hexaacyloxymethyl melamine, Examples thereof include compounds in which 1 to 6 methylol groups of hexamethylolmelamine are acyloxymethylated, or a mixture thereof. Examples of the guanamine compound include tetramethylolguanamine, tetramethoxymethylguanamine, a compound in which 1 to 4 methylol groups of tetramethylolguanamine are methoxymethylated, or a mixture thereof, tetramethoxyethylguanamine, tetraacyloxyguanamine, and tetramethylolguanamine. A compound in which ˜4 methylol groups are acyloxymethylated or a mixture thereof may be mentioned. Examples of the glycoluril compound include tetramethylol glycoluril, tetramethoxyglycoluril, tetramethoxymethylglycoluril, a compound in which 1 to 4 methylol groups of tetramethylolglycoluril are methoxymethylated, or a mixture thereof, and tetramethylolglycoluril methylol. Examples thereof include compounds in which 1 to 4 of the groups are acyloxymethylated or a mixture thereof. Examples of the urea compound include tetramethylol urea, tetramethoxymethyl urea, a compound in which 1 to 4 methylol groups of tetramethylol urea are methoxymethylated, a mixture thereof, tetramethoxyethyl urea, and the like.
Examples of the isocyanate compound include tolylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, and cyclohexane diisocyanate. Examples of the azide compound include 1,1′-biphenyl-4,4′-bisazide and 4,4′-methylidenebis. Examples include azide and 4,4′-oxybisazide.

  Examples of the compound containing an alkenyl ether group include ethylene glycol divinyl ether, triethylene glycol divinyl ether, 1,2-propanediol divinyl ether, 1,4-butanediol divinyl ether, tetramethylene glycol divinyl ether, neopentyl glycol divinyl ether, Examples include trimethylolpropane trivinyl ether, hexanediol divinyl ether, 1,4-cyclohexanediol divinyl ether, pentaerythritol trivinyl ether, pentaerythritol tetravinyl ether, sorbitol tetravinyl ether, sorbitol pentavinyl ether, and trimethylolpropane trivinyl ether.

Examples of the compound containing a hydroxy group include naphthol novolak, m- and p-cresol novolak, naphthol-dicyclopentadiene novolak, m- and p-cresol-dicyclopentadiene novolak, 4,8-bis (hydroxymethyl) tricyclo [5. .2.1.0 ^2,6 ] -decane, pentaerythritol, 1,2,6-hexanetriol, 4,4 ′, 4 ″ -methylidenetriscyclohexanol, 4,4 ′-[1- [4 -[1- (4-Hydroxycyclohexyl) -1-methylethyl] phenyl] ethylidene] biscyclohexanol, [1,1'-bicyclohexyl] -4,4'-diol, methylenebiscyclohexanol, decahydronaphthalene- 2,6-diol, [1,1′-bicyclohexyl] -3,3 ′, 4,4′-teto Alcohol group-containing compounds such as hydroxy, bisphenol, methylene bisphenol, 2,2′-methylene bis [4-methylphenol], 4,4′-methylidene-bis [2,6-dimethylphenol], 4,4 ′-(1 -Methyl-ethylidene) bis [2-methylphenol], 4,4'-cyclohexylidene bisphenol, 4,4 '-(1,3-dimethylbutylidene) bisphenol, 4,4'-(1-methylethylidene) Bis [2,6-dimethylphenol], 4,4′-oxybisphenol, 4,4′-methylenebisphenol, bis (4-hydroxyphenyl) methanone, 4,4′-methylenebis [2-methylphenol], 4, 4 ′-[1,4-phenylenebis (1-methylethylidene)] bisphenol, 4,4 ′-(1,2-ethanedi Bisphenol, 4,4 ′-(diethylsilylene) bisphenol, 4,4 ′-[2,2,2-trifluoro-1- (trifluoromethyl) ethylidene] bisphenol, 4,4 ′, 4 ″- Methylidenetrisphenol, 4,4 ′-[1- (4-hydroxyphenyl) -1-methylethyl] phenyl] ethylidene] bisphenol, 2,6-bis [(2-hydroxy-5-methylphenyl) methyl]- 4-methylphenol, 4,4 ′, 4 ″ -ethylidene tris [2-methylphenol], 4,4 ′, 4 ″ -ethylidene trisphenol, 4,6-bis [(4-hydroxyphenyl) Methyl] 1,3-benzenediol, 4,4 ′-[(3,4-dihydroxyphenyl) methylene] bis [2-methylphenol], 4,4 ′, 4 ″, 4 ′ ″-(1, 2- Tandiylidene) tetrakisphenol, 4,4 ′, 4 ″, 4 ′ ″-(ethanediylidene) tetrakis [2-methylphenol], 2,2′-methylenebis [6-[(2-hydroxy-5-methylphenyl) Methyl] -4-methylphenol], 4,4 ′, 4 ″, 4 ′ ″-(1,4-phenylenedimethylidyne) tetrakisphenol, 2,4,6-tris (4-hydroxyphenylmethyl) 1 , 3-benzenediol, 2,4 ′, 4 ″ -methylidenetrisphenol, 4,4 ′, 4 ′ ″-(3-methyl-1-propanyl-3-ylidene) trisphenol, 2,6- Bis [(4-hydroxy-3-fluorophenyl) methyl] -4-fluorophenol, 2,6-bis [4-hydroxy-3-fluorophenyl] methyl] -4-fluorophenol, 3,6- Bis [(3,5-dimethyl-4-hydroxyphenyl) methyl] -1,2-benzenediol, 4,6-bis [(3,5-dimethyl-4-hydroxyphenyl) methyl] -1,3-benzene Diol, p-methylcalix [4] arene, 2,2′-methylenebis [6-[(2,5 / 3,6-dimethyl-4 / 2-hydroxyphenyl) methyl] -4-methylphenol, 2,2 '-Methylenebis [6-[(3,5-dimethyl-4-hydroxyphenyl) methyl] -4-methylphenol, 4,4', 4 '', 4 '''-tetrakis [(1-methylethylidene) bis (1,4-cyclohexylidene)] phenol, 6,6′-methylenebis [4- (4-hydroxyphenylmethyl) -1,2,3-benzenetriol, 3,3 ′, 5,5′-tetrakis [ (5 Methyl-2-hydroxyphenyl) methyl]-[(1,1′-biphenyl) -4,4′-diol] and the like, and the hydroxy group of these phenolic low-nucleates are substituted with glycidyl ether. It is also possible to add additional crosslinking agents.

  The blending amount of the crosslinking agent in the present invention is preferably 5 to 50 parts, particularly preferably 10 to 40 parts with respect to 100 parts of the base resin (for all resins). If it is 5 parts or more, there is little possibility of causing mixing with the upper layer film, and if it is 50 parts or less, there is little risk of cracking in the film after crosslinking.

  In the resist underlayer film material of the present invention, an acid generator for further promoting the crosslinking reaction by heat can be added. There are acid generators that generate an acid by thermal decomposition and those that generate an acid by light irradiation, and any of them can be added.

As an acid generator used in the resist underlayer film material of the present invention,
i. An onium salt of the following general formula (P1a-1), (P1a-2), (P1a-3) or (P1b),
ii. A diazomethane derivative of the following general formula (P2):
iii. A glyoxime derivative of the following general formula (P3):
iv. A bissulfone derivative of the following general formula (P4):
v. A sulfonic acid ester of an N-hydroxyimide compound of the following general formula (P5),
vi. β-ketosulfonic acid derivatives,
vii. Disulfone derivatives,
viii. Nitrobenzyl sulfonate derivatives,
ix. Examples thereof include sulfonic acid ester derivatives.

（式中、Ｒ^101a、Ｒ^101b、Ｒ^101cはそれぞれ炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基、アルケニル基、オキソアルキル基又はオキソアルケニル基、炭素数６〜２０のアリール基、又は炭素数７〜１２のアラルキル基又はアリールオキソアルキル基を示し、これらの基の水素原子の一部又は全部がアルコキシ基等によって置換されていてもよい。また、Ｒ^101bとＲ^101cとは環を形成してもよく、環を形成する場合には、Ｒ^101b、Ｒ^101cはそれぞれ炭素数１〜６のアルキレン基を示す。Ｋ^-は非求核性対向イオンを表す。Ｒ^101d、Ｒ^101e、Ｒ^101f、Ｒ^101gは、Ｒ^101a、Ｒ^101b、Ｒ^101cと同様の基及び水素原子から選ばれる。Ｒ^101dとＲ^101e、Ｒ^101dとＲ^101eとＲ^101fとは環を形成してもよく、環を形成する場合には、Ｒ^101dとＲ^101e及びＲ^101dとＲ^101eとＲ^101fは炭素数３〜１０のアルキレン基を示す。）

Wherein R ^101a , R ^101b and R ^101c are each a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, an alkenyl group, an oxoalkyl group or an oxoalkenyl group, and an aryl having 6 to 20 carbon atoms. Group, an aralkyl group having 7 to 12 carbon atoms or an aryloxoalkyl group, part or all of hydrogen atoms of these groups may be substituted by an alkoxy group, etc. R ^101b and R ^{101c May} form a ring, and in the case of forming a ring, R ^101b and R ^101c each represent an alkylene group having 1 to 6 carbon atoms, K ⁻ represents a non-nucleophilic counter ion, R ^101d , R ^101e , R ^101f and R ^101g are selected from the same groups and hydrogen atoms as R ^101a , R ^101b and R ^101c , R ^101d and R ^101e , R ^101d , R ^101e and R ^101f form a ring. In the case of forming a ring, R ^101d and R ^101e and R ^{1 01d} , R ^101e and R ^101f represent an alkylene group having 3 to 10 carbon atoms.)

R ^101a , R ^101b , R ^101c , R ^101d , R ^101e , R ^101f and R ^101g may be the same as or different from each other. Specifically, as an alkyl group, a methyl group, an ethyl group, a propyl group , Isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclopropylmethyl group, 4-methylcyclohexyl Group, cyclohexylmethyl group, norbornyl group, adamantyl group and the like. Examples of the alkenyl group include a vinyl group, an allyl group, a propenyl group, a butenyl group, a hexenyl group, and a cyclohexenyl group. Examples of the oxoalkyl group include 2-oxocyclopentyl group, 2-oxocyclohexyl group, and the like. 2-oxopropyl group, 2-cyclopentyl-2-oxoethyl group, 2-cyclohexyl-2-oxoethyl group, 2- (4 -Methylcyclohexyl) -2-oxoethyl group and the like can be mentioned. Examples of the oxoalkenyl group include 2-oxo-4-cyclohexenyl group and 2-oxo-4-propenyl group. Examples of the aryl group include phenyl group, naphthyl group, p-methoxyphenyl group, m-methoxyphenyl group, o-methoxyphenyl group, ethoxyphenyl group, p-tert-butoxyphenyl group, m-tert-butoxyphenyl group. Alkylphenyl groups such as alkoxyphenyl groups, 2-methylphenyl groups, 3-methylphenyl groups, 4-methylphenyl groups, ethylphenyl groups, 4-tert-butylphenyl groups, 4-butylphenyl groups, dimethylphenyl groups, etc. Alkyl naphthyl groups such as methyl naphthyl group and ethyl naphthyl group, alkoxy naphthyl groups such as methoxy naphthyl group and ethoxy naphthyl group, dialkyl naphthyl groups such as dimethyl naphthyl group and diethyl naphthyl group, dimethoxy naphthyl group and diethoxy naphthyl group Dialkoxynaphthyl group And the like. Examples of the aralkyl group include a benzyl group, a phenylethyl group, and a phenethyl group. As the aryloxoalkyl group, 2-aryl-2-oxoethyl group such as 2-phenyl-2-oxoethyl group, 2- (1-naphthyl) -2-oxoethyl group, 2- (2-naphthyl) -2-oxoethyl group, etc. Groups and the like. Non-nucleophilic counter ions of K ⁻ include halide ions such as chloride ion and bromide ion, fluoroalkyl sulfonates such as triflate, 1,1,1-trifluoroethane sulfonate, and nonafluorobutane sulfonate, tosylate, and benzene sulfonate. Arylsulfonates such as 4-fluorobenzenesulfonate, 1,2,3,4,5-pentafluorobenzenesulfonate, alkylsulfonates such as mesylate and butanesulfonate, bis (trifluoromethylsulfonyl) imide, bis (perfluoroethylsulfonyl) ) Imido acids such as imide and bis (perfluorobutylsulfonyl) imide, methide acids such as tris (trifluoromethylsulfonyl) methide, tris (perfluoroethylsulfonyl) methide, and the following general Sulfonate position alpha represented by (K-1) is fluoro substituted, alpha represented by the following general formula (K-2), β-position include sulfonates fluorine substituted.

（上記式（Ｋ−１）中、Ｒ¹⁰²は水素原子、炭素数１〜２０の直鎖状、分岐状又は環状のアルキル基又はアシル基、炭素数２〜２０のアルケニル基、又は炭素数６〜２０のアリール基又はアリーロキシ基である。式（Ｋ−２）中、Ｒ¹⁰³は水素原子、炭素数１〜２０の直鎖状、分岐状又は環状のアルキル基、炭素数２〜２０のアルケニル基、又は炭素数６〜２０のアリール基である。）

(In the above formula (K-1), ^R102 is a hydrogen atom, a linear, branched or cyclic alkyl group or acyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, or 6 carbon atoms. An aryl group or an aryloxy group of -20, wherein R ¹⁰³ is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, or an alkenyl group having 2 to 20 carbon atoms; Group or an aryl group having 6 to 20 carbon atoms.)

  (P1a-1) and (P1a-2) have the effects of both a photoacid generator and a thermal acid generator, while (P1a-3) acts as a thermal acid generator.

（式中、Ｒ^102a、Ｒ^102bはそれぞれ炭素数１〜８の直鎖状、分岐状又は環状のアルキル基を示す。Ｒ¹⁰³は炭素数１〜１０の直鎖状、分岐状又は環状のアルキレン基を示す。Ｒ^104a、Ｒ^104bはそれぞれ炭素数３〜７の２−オキソアルキル基を示す。Ｋ^-は非求核性対向イオンを表す。）

(Wherein R ^102a and R ^102b each represent a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms. R ¹⁰³ is a linear, branched or cyclic alkylene having 1 to 10 carbon atoms. R ^104a and R ^104b each represent a 2-oxoalkyl group having 3 to 7 carbon atoms, and K ⁻ represents a non-nucleophilic counter ion.)

Specific examples of R ^102a and R ^102b include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a pentyl group, a hexyl group, a heptyl group, and an octyl group. , Cyclopentyl group, cyclohexyl group, cyclopropylmethyl group, 4-methylcyclohexyl group, cyclohexylmethyl group and the like. R ¹⁰³ is methylene group, ethylene group, propylene group, butylene group, pentylene group, hexylene group, heptylene group, octylene group, nonylene group, 1,4-cyclohexylene group, 1,2-cyclohexylene. Group, 1,3-cyclopentylene group, 1,4-cyclooctylene group, 1,4-cyclohexanedimethylene group and the like. ^{Examples of} R ^104a and R ^104b include a 2-oxopropyl group, a 2-oxocyclopentyl group, a 2-oxocyclohexyl group, and a 2-oxocycloheptyl group. K ^- is the formula (P1a-1), can be exemplified the same ones as described in (P1a-2) and (P1a-3).

（式中、Ｒ¹⁰⁵、Ｒ¹⁰⁶は炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基又はハロゲン化アルキル基、炭素数６〜２０のアリール基又はハロゲン化アリール基、又は炭素数７〜１２のアラルキル基を示す。）

(Wherein R ¹⁰⁵ and R ¹⁰⁶ are linear, branched or cyclic alkyl groups or halogenated alkyl groups having 1 to 12 carbon atoms, aryl groups or halogenated aryl groups having 6 to 20 carbon atoms, or the number of carbon atoms. 7 to 12 aralkyl groups are shown.)

^Examples of the alkyl group of R ¹⁰⁵ and R ¹⁰⁶ include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, pentyl group, hexyl group, heptyl group, octyl group, amyl Group, cyclopentyl group, cyclohexyl group, cycloheptyl group, norbornyl group, adamantyl group and the like. Examples of the halogenated alkyl group include a trifluoromethyl group, a 1,1,1-trifluoroethyl group, a 1,1,1-trichloroethyl group, and a nonafluorobutyl group. As the aryl group, an alkoxyphenyl group such as a phenyl group, p-methoxyphenyl group, m-methoxyphenyl group, o-methoxyphenyl group, ethoxyphenyl group, p-tert-butoxyphenyl group, m-tert-butoxyphenyl group, Examples thereof include alkylphenyl groups such as 2-methylphenyl group, 3-methylphenyl group, 4-methylphenyl group, ethylphenyl group, 4-tert-butylphenyl group, 4-butylphenyl group, and dimethylphenyl group. Examples of the halogenated aryl group include a fluorophenyl group, a chlorophenyl group, and 1,2,3,4,5-pentafluorophenyl group. Examples of the aralkyl group include a benzyl group and a phenethyl group.

（式中、Ｒ¹⁰⁷、Ｒ¹⁰⁸、Ｒ¹⁰⁹は炭素数１〜１２の直鎖状、分岐状又は環状のアルキル基又はハロゲン化アルキル基、炭素数６〜２０のアリール基又はハロゲン化アリール基、又は炭素数７〜１２のアラルキル基を示す。Ｒ¹⁰⁸、Ｒ¹⁰⁹は互いに結合して環状構造を形成してもよく、環状構造を形成する場合、Ｒ¹⁰⁸、Ｒ¹⁰⁹はそれぞれ炭素数１〜６の直鎖状又は分岐状のアルキレン基を示す。Ｒ¹⁰⁵は、式（Ｐ２）のものと同様である。）

(Wherein R ¹⁰⁷ , R ¹⁰⁸ and R ¹⁰⁹ are each a linear, branched or cyclic alkyl group or halogenated alkyl group having 1 to 12 carbon atoms, an aryl group or halogenated aryl group having 6 to 20 carbon atoms, Or an aralkyl group having 7 to 12 carbon atoms, R ¹⁰⁸ and R ¹⁰⁹ may be bonded to each other to form a cyclic structure, and in the case of forming a cyclic structure, R ¹⁰⁸ and R ¹⁰⁹ each have 1 to 6 carbon atoms. And R ¹⁰⁵ is the same as that in formula (P2).

Examples of the alkyl group, halogenated alkyl group, aryl group, halogenated aryl group, and aralkyl group of R ¹⁰⁷ , R ¹⁰⁸ , and R ¹⁰⁹ include the same groups as those described for R ¹⁰⁵ and R ¹⁰⁶ . ^Examples of the alkylene group for R ¹⁰⁸ and R ¹⁰⁹ include a methylene group, an ethylene group, a propylene group, a butylene group, and a hexylene group.

（式中、Ｒ^101a、Ｒ^101bは前記と同様である。）

(In the formula, R ^101a and R ^101b are the same as described above.)

（式中、Ｒ¹¹⁰は炭素数６〜１０のアリーレン基、炭素数１〜６のアルキレン基又は炭素数２〜６のアルケニレン基を示し、これらの基の水素原子の一部又は全部は更に炭素数１〜４の直鎖状又は分岐状のアルキル基又はアルコキシ基、ニトロ基、アセチル基、又はフェニル基で置換されていてもよい。Ｒ¹¹¹は炭素数１〜８の直鎖状、分岐状又は置換のアルキル基、アルケニル基又はアルコキシアルキル基、フェニル基、又はナフチル基を示し、これらの基の水素原子の一部又は全部は更に炭素数１〜４のアルキル基又はアルコキシ基；炭素数１〜４のアルキル基、アルコキシ基、ニトロ基又はアセチル基で置換されていてもよいフェニル基；炭素数３〜５のヘテロ芳香族基；又は塩素原子、フッ素原子で置換されていてもよい。）

(In the formula, R ¹¹⁰ represents an arylene group having 6 to 10 carbon atoms, an alkylene group having 1 to 6 carbon atoms, or an alkenylene group having 2 to 6 carbon atoms, and some or all of the hydrogen atoms of these groups are further carbon atoms. It may be substituted with a linear or branched alkyl group or alkoxy group having 1 to 4 carbon atoms, a nitro group, an acetyl group, or a phenyl group, and R ¹¹¹ is a linear or branched chain having 1 to 8 carbon atoms. Or a substituted alkyl group, an alkenyl group or an alkoxyalkyl group, a phenyl group, or a naphthyl group, and part or all of the hydrogen atoms of these groups are further an alkyl group or alkoxy group having 1 to 4 carbon atoms; A phenyl group which may be substituted with an alkyl group of 4 to 4, an alkoxy group, a nitro group or an acetyl group; a heteroaromatic group having 3 to 5 carbon atoms; or a phenyl group which may be substituted with a chlorine atom or a fluorine atom.

Here, as the arylene group of R ¹¹⁰ , 1,2-phenylene group, 1,8-naphthylene group, etc., and as the alkylene group, methylene group, ethylene group, trimethylene group, tetramethylene group, phenylethylene group, norbornane Examples of the alkenylene group such as -2,3-diyl group include 1,2-vinylene group, 1-phenyl-1,2-vinylene group, 5-norbornene-2,3-diyl group and the like. The alkyl group for R ¹¹¹ is the same as R ^{101a to} R ^101c, and the alkenyl group is a vinyl group, 1-propenyl group, allyl group, 1-butenyl group, 3-butenyl group, isoprenyl group, 1- Pentenyl group, 3-pentenyl group, 4-pentenyl group, dimethylallyl group, 1-hexenyl group, 3-hexenyl group, 5-hexenyl group, 1-heptenyl group, 3-heptenyl group, 6-heptenyl group, 7-octenyl Groups such as alkoxyalkyl groups include methoxymethyl, ethoxymethyl, propoxymethyl, butoxymethyl, pentyloxymethyl, hexyloxymethyl, heptyloxymethyl, methoxyethyl, ethoxyethyl, Propoxyethyl, butoxyethyl, pentyloxyethyl, hexyloxyethyl, methoxypro Group, ethoxypropyl group, propoxypropyl group, butoxy propyl group, methoxybutyl group, ethoxybutyl group, propoxybutyl group, a methoxy pentyl group, an ethoxy pentyl group, a methoxy hexyl group, a methoxy heptyl group.

  In addition, examples of the optionally substituted alkyl group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a tert-butyl group. As the alkoxy group of ˜4, a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, an n-butoxy group, an isobutoxy group, a tert-butoxy group and the like are an alkyl group having 1 to 4 carbon atoms, an alkoxy group, and a nitro group. As the phenyl group which may be substituted with an acetyl group, a phenyl group, a tolyl group, a p-tert-butoxyphenyl group, a p-acetylphenyl group, a p-nitrophenyl group, etc. are heterocycles having 3 to 5 carbon atoms. Examples of the aromatic group include a pyridyl group and a furyl group.

  Specifically, examples of the onium salt include tetramethylammonium trifluoromethanesulfonate, tetramethylammonium nonafluorobutanesulfonate, tetra-n-butylammonium nonafluorobutanesulfonate, tetraphenylammonium nonafluorobutanesulfonate, p- Toluenesulfonic acid tetramethylammonium, trifluoromethanesulfonic acid diphenyliodonium, trifluoromethanesulfonic acid (p-tert-butoxyphenyl) phenyliodonium, p-toluenesulfonic acid diphenyliodonium, p-toluenesulfonic acid (p-tert-butoxyphenyl) Phenyl iodonium, trifluoromethanesulfonic acid triphenylsulfonium, trifluoromethanesulfonic acid (p-tert- Toxiphenyl) diphenylsulfonium, bis (p-tert-butoxyphenyl) phenylsulfonium trifluoromethanesulfonate, tris (p-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, p-toluenesulfone Acid (p-tert-butoxyphenyl) diphenylsulfonium, p-toluenesulfonic acid bis (p-tert-butoxyphenyl) phenylsulfonium, p-toluenesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, nonafluorobutanesulfonic acid Triphenylsulfonium, triphenylsulfonium butanesulfonate, trimethylsulfonium trifluoromethanesulfonate, p-toluenesulfone Trimethylsulfonium, cyclohexylmethyl trifluoromethanesulfonate (2-oxocyclohexyl) sulfonium, cyclohexylmethyl p-toluenesulfonate (2-oxocyclohexyl) sulfonium, dimethylphenylsulfonium trifluoromethanesulfonate, dimethylphenylsulfonium p-toluenesulfonate, trifluoro Dicyclohexylphenylsulfonium p-toluenesulfonate, dicyclohexylphenylsulfonium p-toluenesulfonate, trinaphthylsulfonium trifluoromethanesulfonate, (2-norbornyl) methyl (2-oxocyclohexyl) sulfonium trifluoromethanesulfonate, ethylenebis [methyl (2-oxo Cyclopentyl) sulfonium trifluoromethanesulfo Nate], 1,2'-naphthylcarbonylmethyltetrahydrothiophenium triflate, triethylammonium nonaflate, tributylammonium nonaflate, tetraethylammonium nonaflate, tetrabutylammonium nonaflate, triethylammonium bis (trifluoromethylsulfonyl) imide, Examples include onium salts such as triethylammonium tris (perfluoroethylsulfonyl) methide.

  Diazomethane derivatives include bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (xylenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (cyclopentylsulfonyl) diazomethane, and bis (n-butylsulfonyl). ) Diazomethane, bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis (n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane, bis (n-amylsulfonyl) ) Diazomethane, bis (isoamylsulfonyl) diazomethane, bis (sec-amylsulfonyl) diazomethane, bis (tert-amino) Sulfonyl) diazomethane, 1-cyclohexylsulfonyl-1- (tert-butylsulfonyl) diazomethane, 1-cyclohexylsulfonyl-1- (tert-amylsulfonyl) diazomethane, 1-tert-amylsulfonyl-1- (tert-butylsulfonyl) diazomethane And diazomethane derivatives.

  Examples of glyoxime derivatives include bis-O- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-O- (p-toluenesulfonyl) -α-diphenylglyoxime, bis-O- (p-toluenesulfonyl)- α-dicyclohexylglyoxime, bis-O- (p-toluenesulfonyl) -2,3-pentanedione glyoxime, bis-O- (p-toluenesulfonyl) -2-methyl-3,4-pentanedione glyoxime, Bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bis-O- (n-butanesulfonyl) -α-diphenylglyoxime, bis-O- (n-butanesulfonyl) -α-dicyclohexylglyoxime Bis-O- (n-butanesulfonyl) -2,3-pentanedione glyoxime, bis-O- ( -Butanesulfonyl) -2-methyl-3,4-pentanedione glyoxime, bis-O- (methanesulfonyl) -α-dimethylglyoxime, bis-O- (trifluoromethanesulfonyl) -α-dimethylglyoxime, bis -O- (1,1,1-trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-O- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-O- (perfluorooctanesulfonyl)- α-dimethylglyoxime, bis-O- (cyclohexanesulfonyl) -α-dimethylglyoxime, bis-O- (benzenesulfonyl) -α-dimethylglyoxime, bis-O- (p-fluorobenzenesulfonyl) -α- Dimethylglyoxime, bis-O- (p-tert-butylbenzenesulfonyl) α- dimethylglyoxime, bis -O- (xylene sulfonyl)-.alpha.-dimethylglyoxime include glyoxime derivatives such as bis -O- (camphorsulfonyl)-.alpha.-dimethylglyoxime.

  Examples of bissulfone derivatives include bisnaphthylsulfonylmethane, bistrifluoromethylsulfonylmethane, bismethylsulfonylmethane, bisethylsulfonylmethane, bispropylsulfonylmethane, bisisopropylsulfonylmethane, bis-p-toluenesulfonylmethane, and bisbenzenesulfonylmethane. Bissulfone derivatives are mentioned.

Examples of the β-ketosulfone derivative include β-ketosulfone derivatives such as 2-cyclohexylcarbonyl-2- (p-toluenesulfonyl) propane and 2-isopropylcarbonyl-2- (p-toluenesulfonyl) propane.
Examples of the disulfone derivative include disulfone derivatives such as diphenyl disulfone derivatives and dicyclohexyl disulfone derivatives.

  Examples of the nitrobenzyl sulfonate derivative include nitrobenzyl sulfonate derivatives such as 2,6-dinitrobenzyl p-toluenesulfonate and 2,4-dinitrobenzyl p-toluenesulfonate.

  Examples of sulfonic acid ester derivatives include 1,2,3-tris (methanesulfonyloxy) benzene, 1,2,3-tris (trifluoromethanesulfonyloxy) benzene, 1,2,3-tris (p-toluenesulfonyloxy). Mention may be made of sulfonic acid ester derivatives such as benzene.

  Examples of sulfonic acid ester derivatives of N-hydroxyimide compounds include N-hydroxysuccinimide methanesulfonic acid ester, N-hydroxysuccinimide trifluoromethanesulfonic acid ester, N-hydroxysuccinimide ethanesulfonic acid ester, N-hydroxysuccinimide 1-propanesulfonic acid. Ester, N-hydroxysuccinimide 2-propanesulfonic acid ester, N-hydroxysuccinimide 1-pentanesulfonic acid ester, N-hydroxysuccinimide 1-octanesulfonic acid ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N-hydroxysuccinimide p-methoxybenzenesulfonic acid ester, N-hydroxysuccinimide 2-chloroethanesulfonic acid ester N-hydroxysuccinimide benzenesulfonic acid ester, N-hydroxysuccinimide-2,4,6-trimethylbenzenesulfonic acid ester, N-hydroxysuccinimide 1-naphthalenesulfonic acid ester, N-hydroxysuccinimide 2-naphthalenesulfonic acid ester, N- Hydroxy-2-phenylsuccinimide methanesulfonate, N-hydroxymaleimide methanesulfonate, N-hydroxymaleimide ethanesulfonate, N-hydroxy-2-phenylmaleimide methanesulfonate, N-hydroxyglutarimide methanesulfonate Ester, N-hydroxyglutarimide benzenesulfonic acid ester, N-hydroxyphthalimide methanesulfonic acid ester, N-hydro Siphthalimidobenzenesulfonic acid ester, N-hydroxyphthalimide trifluoromethanesulfonic acid ester, N-hydroxyphthalimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, N-hydroxynaphthalimide benzenesulfonic acid ester, N- Hydroxy-5-norbornene-2,3-dicarboximide methanesulfonate, N-hydroxy-5-norbornene-2,3-dicarboximide trifluoromethanesulfonate, N-hydroxy-5-norbornene-2,3 -Sulphonic acid ester derivatives of N-hydroxyimide compounds such as dicarboximide p-toluenesulfonic acid ester.

Among them, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium trifluoromethanesulfonate (p-tert-butoxyphenyl) diphenylsulfonium, tris (p-tert-butoxyphenyl) sulfonium trifluoromethanesulfonate, triphenylsulfonium p-toluenesulfonate, p -Toluenesulfonic acid (p-tert-butoxyphenyl) diphenylsulfonium, p-toluenesulfonic acid tris (p-tert-butoxyphenyl) sulfonium, trifluoromethanesulfonic acid trinaphthylsulfonium, trifluoromethanesulfonic acid cyclohexylmethyl (2-oxocyclohexyl) ) Sulfonium, trifluoromethanesulfonic acid (2-norbornyl) methyl (2-oxocyclohexyl) sulfonic acid Arm, 1,2'-naphthyl carbonyl methyl tetrahydrothiophenium triflate onium salts such as,
Bis (benzenesulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (n-butylsulfonyl) diazomethane, bis (isobutylsulfonyl) diazomethane, bis (sec-butylsulfonyl) diazomethane, bis ( diazomethane derivatives such as n-propylsulfonyl) diazomethane, bis (isopropylsulfonyl) diazomethane, bis (tert-butylsulfonyl) diazomethane,
Glyoxime derivatives such as bis-O- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-O- (n-butanesulfonyl) -α-dimethylglyoxime,
Bissulfone derivatives such as bisnaphthylsulfonylmethane,
N-hydroxysuccinimide methanesulfonic acid ester, N-hydroxysuccinimide trifluoromethanesulfonic acid ester, N-hydroxysuccinimide 1-propanesulfonic acid ester, N-hydroxysuccinimide 2-propanesulfonic acid ester, N-hydroxysuccinimide 1-pentanesulfonic acid A sulfonic acid ester derivative of an N-hydroxyimide compound such as an ester, N-hydroxysuccinimide p-toluenesulfonic acid ester, N-hydroxynaphthalimide methanesulfonic acid ester, or N-hydroxynaphthalimide benzenesulfonic acid ester is preferably used.

  In addition, the said acid generator can be used individually by 1 type or in combination of 2 or more types.

  The addition amount of the acid generator is preferably 0.1 to 50 parts, more preferably 0.5 to 40 parts with respect to 100 parts of the base resin. If the amount is 0.1 part or more, the amount of acid generated is sufficient, and the crosslinking reaction is unlikely to be insufficient. If the amount is 50 parts or less, there is little possibility of mixing phenomenon due to the acid moving to the upper resist.

Furthermore, the resist underlayer film material of the present invention can be blended with a basic compound for improving storage stability.
The basic compound serves as a quencher for the acid to prevent the acid generated in a trace amount from the acid generator from causing the crosslinking reaction to proceed.

  Examples of such basic compounds include primary, secondary, and tertiary aliphatic amines, hybrid amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, and sulfonyl groups. A nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyl group, a nitrogen-containing compound having a hydroxyphenyl group, an alcoholic nitrogen-containing compound, an amide derivative, an imide derivative, and the like.

  Specifically, primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert- Amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, etc. are exemplified as secondary aliphatic amines. Dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, disi Lopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N, N-dimethylmethylenediamine, N, N-dimethylethylenediamine, N, N-dimethyltetraethylenepenta Examples of tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, and tripentylamine. , Tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, Examples include cetylamine, N, N, N ′, N′-tetramethylmethylenediamine, N, N, N ′, N′-tetramethylethylenediamine, N, N, N ′, N′-tetramethyltetraethylenepentamine and the like. Is done.

  Examples of hybrid amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, and benzyldimethylamine. Specific examples of aromatic amines and heterocyclic amines include aniline derivatives (eg, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N, N-dimethylaniline, 2-methylaniline, 3- Methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5- Dinitroaniline, N, N-dimethyltoluidine, etc.), diphenyl (p-tolyl) amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (eg pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dim Lupyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (eg oxazole, isoxazole etc.), thiazole derivatives (eg thiazole, isothiazole etc.), imidazole derivatives (eg imidazole, 4-methylimidazole, 4 -Methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazane derivatives, pyrroline derivatives (eg pyrroline, 2-methyl-1-pyrroline etc.), pyrrolidine derivatives (eg pyrrolidine, N-methylpyrrolidine, pyrrolidinone, N-methylpyrrolidone etc.) ), Imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (eg pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pyridine, dimethyl) Lysine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2-pyridone, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2- (1-ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine Derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline derivatives (eg quinoline, 3-quinoline carbo Nitriles), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine Examples include derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives and the like.

  Furthermore, examples of the nitrogen-containing compound having a carboxy group include aminobenzoic acid, indolecarboxylic acid, amino acid derivatives (eg, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, methionine , Phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine) and the like, and examples of the nitrogen-containing compound having a sulfonyl group include 3-pyridinesulfonic acid, pyridinium p-toluenesulfonate, and the like. Nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, and alcoholic nitrogen-containing compounds include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, and 3-indolemethanol. Drate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N, N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino-1-propanol 4-amino-1-butanol, 4- (2-hydroxyethyl) morpholine, 2- (2-hydroxyethyl) pyridine, 1- (2-hydroxyethyl) piperazine, 1- [2- (2-hydroxyethoxy) Ethyl] piperazine, piperidineethanol, 1- (2-hydroxyethyl) pyrrolidine, 1- (2-hydroxyethyl) -2-pyrrolidinone, 3-piperidino-1,2-propanediol, 3-pyrrolidino-1,2-propane Diol, 8-hydroxyuroli , 3-cuincridinol, 3-tropanol, 1-methyl-2-pyrrolidineethanol, 1-aziridineethanol, N- (2-hydroxyethyl) phthalimide, N- (2-hydroxyethyl) isonicotinamide, etc. Illustrated.

Examples of amide derivatives include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide and the like.
Examples of imide derivatives include phthalimide, succinimide, maleimide and the like.

  The compounding amount of the basic compound is suitably 0.001 to 2 parts, particularly 0.01 to 1 part, relative to 100 parts of the total base resin. If the blending amount is 0.001 part or more, a sufficient blending effect is obtained, and if it is 2 parts or less, there is little possibility that all the acid generated by heat is trapped and not crosslinked.

Examples of the solvent that can be used in the resist underlayer film material of the present invention include water and organic solvents.
The organic solvent is not particularly limited as long as it dissolves the vinyl ether, the polymer containing (meth) acrylate having a large number of carbon atoms as a repeating unit, an acid generator, a crosslinking agent, and other additives. Specific examples thereof include ketones such as cyclohexanone and methyl-2-amyl ketone; 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol and the like. Alcohols: ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether; propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, lactic acid Ethyl, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate , Tert-butyl acetate, tert-butyl propionate, propylene glycol monomethyl ether acetate, propylene glycol mono tert-butyl ether acetate and the like, and one or more of these can be used in combination. It is not limited. In the present invention, among these organic solvents, diethylene glycol dimethyl ether, 1-ethoxy-2-propanol, ethyl lactate, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and a mixed solvent thereof are preferably used.

  The blending amount of the organic solvent is preferably 200 to 10,000 parts, particularly preferably 300 to 5,000 parts with respect to 100 parts of the total base resin.

A surfactant can also be added to the resist underlayer film material of the present invention. Examples of the surfactant include, but are not limited to, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene olein ether, and polyoxyethylene Polyoxyethylene alkyl allyl ethers such as octylphenol ether and polyoxyethylene nonylphenol, polyoxyethylene polyoxypropylene block copolymers, sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monovalmitate, sorbitan monostearate, poly Oxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monovalmitate, polyoxyethylene sorbitan monostearate Nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, F-top EF301, EF303, EF352 (Tochem Products), MegaFuck F171, F172, F173 ( Dainippon Ink & Chemicals, Inc.), Florard FC430, FC431, FC4430 (Sumitomo 3M), Asahi Guard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Surfinol E1004, KH-10 , Fluorosurfactants such as KH-20, KH-30, KH-40 (Asahi Glass), organosiloxane polymers KP-341, X-70-092, X-70-0 3 (Shin-Etsu Chemical), acrylic acid or methacrylic acid Polyflow No. 75, no. 95 (Kyoeisha Oil Chemical Co., Ltd.). Further, surfactants having a perfluoroalkyl ether group described in JP-A-9-43838 and JP-A-2001-125259 can be mentioned.
These can be used alone or in combination of two or more. The addition amount of the surfactant is preferably in the range of 0.0001 to 5% of water or the organic solvent.

  The present invention provides a pattern forming method using the resist underlayer film material. That is, the present invention is a method of forming a pattern on a substrate by lithography, wherein at least the resist underlayer film material of the present invention is used to form a resist underlayer film on the substrate, and silicon atoms are formed on the underlayer film. A resist intermediate layer film containing a photoresist composition, forming a resist upper layer film of a photoresist composition on the intermediate layer film to form a three-layer resist film, and exposing a pattern circuit region of the resist three-layer film Thereafter, development is performed with a developer to form a resist pattern on the resist upper layer film, and the resist intermediate layer film is etched using the resist upper layer film on which the pattern is formed as a mask, so that at least the resist intermediate layer film on which the pattern is formed is formed. The resist underlayer film is etched using the mask, and the substrate is etched using at least the patterned resist underlayer film as a mask. Down to form further provides a pattern forming method, which comprises carrying out the peeling of the resist underlayer film by ashing.

This three-layer resist process will be described more specifically with reference to FIG.
First, as shown in FIG. 1A, a resist lower layer film 11, a resist intermediate layer film 12, and a resist upper layer film 13 are formed on a substrate 10 in which a layer to be processed 10a is laminated on a base layer 10b.
The resist underlayer film 11 of the present invention can be formed on the substrate to be processed 10 by a spin coat method or the like, similarly to the photoresist. After spin coating, it is desirable to evaporate the solvent and perform baking to promote the crosslinking reaction in order to prevent mixing with the resist intermediate layer film 12. The baking temperature is preferably in the range of 80 to 300 ° C. and in the range of 10 to 300 seconds. Although the thickness of the resist underlayer film 11 is appropriately selected, it is preferably 30 to 20,000 nm, particularly 50 to 15,000 nm.

  A resist upper layer film 13 of a photoresist composition is formed on the silicon-containing resist intermediate layer film 12, and an organic antireflection film is formed below the resist upper layer film 13 (on the silicon-containing resist intermediate layer film 12). A film may be formed.

  When the resist upper layer film 13 is formed from a photoresist composition, the spin coating method is preferably used as in the case of forming the resist lower layer film 11. Then, after the resist upper layer film 13 is formed by a spin coating method or the like, prebaking is performed, and a range of 80 to 180 ° C. and 10 to 300 seconds is preferable. The thickness of the resist upper layer film 13 is not particularly limited, but is preferably 30 to 500 nm, particularly 50 to 400 nm.

  Here, as the material for forming the resist underlayer film 11, as described above, the resist underlayer film material of the present invention preferably using a polymer containing a repeating unit represented by the general formula (1) as a base resin. Use.

Further, as the silicon-containing resist intermediate layer film 12 for the three-layer resist process, a silsesquioxane-based resist intermediate layer film is preferably used.
By providing the resist intermediate layer film with an effect as an antireflection film, reflection can be further suppressed. Particularly for 193 nm exposure, when the base resin of the resist underlayer film according to the present invention has no absorbing group, the substrate reflection can be reduced to 0.5% or less by suppressing the reflection with the resist intermediate layer film. The resist intermediate layer film having an antireflection effect has an anthracene group for exposure at 248 nm and 157 nm, has a phenyl group or a silicon-silicon bond for exposure at 193 nm, and crosslinks with acid or heat. Sun is preferably used.

In addition, as the resist intermediate layer film, a resist intermediate layer film formed by a chemical vapor deposition (CVD) method can also be used. As a silicon-containing resist intermediate film formed by CVD, an SiON film is known as an antireflection film, but an SiO ₂ film having no effect as an antireflection film can also be used.
However, the formation of the resist intermediate layer film by the spin coating method has an advantage that there is no cost for introducing the CVD apparatus than the CVD method.

Further, as the photoresist composition for forming the resist upper layer film 13, a known one can be used.
The resist upper layer film 13 in the three-layer resist process may be either a positive type or a negative type, and the same one as a commonly used single layer resist can be used.

Next, as shown in FIGS. 1B and 1C, exposure and development are performed.
After forming the resist upper layer film 13 as described above, exposure 14 is performed according to a conventional method (see FIG. 1B), post-exposure baking (PEB), and development is performed to obtain a resist pattern 13a (FIG. 1). (See (c)).

Next, as shown in FIG. 1D, the silicon-containing resist intermediate layer film 12 is etched using the obtained resist pattern as a mask.
At this time, it is preferable to use a fluorocarbon gas. Examples of the fluorocarbon gas include CF ₄ , CHF ₃ , C ₂ F ₆ , C ₂ F ₄ , C ₃ F ₁₀ , C ₃ F ₈ , C ₄ F ₁₀ , and C ₄ F ₈ .

Next, after removing the resist pattern (upper layer film), as shown in FIG. 1E, the resist lower layer film 11 is etched using the silicon-containing resist intermediate layer film 12 as a mask. Note that the resist pattern can be removed simultaneously with the etching of the resist underlayer film.
The gas used at this time is oxygen, hydrogen, ammonia gas, or the like. In addition to oxygen gas or the like, it is also possible to add an inert gas such as He or Ar, or CO, CO ₂ , SO ₂ , N ₂ , or NO ₂ gas. In particular, the latter gas is used for side wall protection for preventing undercut of the pattern side wall.

Next, as shown in FIG. 1F, the layer to be processed 10a of the substrate 10 is etched.
Etching of the substrate 10 can also be performed by a conventional method. For example, if the substrate 10 is a SiO ₂ , SiN, or silica-based low dielectric constant film, etching is mainly performed using a fluorocarbon gas, and p-Si, Al, or W is performed using mainly a chlorine-based or bromine-based gas. . When the substrate processing is etched with chlorofluorocarbon gas, the silicon-containing resist intermediate film 12 is peeled off simultaneously with the processing of the substrate 10 to be processed. Further, when etching with a chlorine-based or bromine-based gas, the intermediate layer film 12 is removed in advance by etching with a chlorofluorocarbon-based gas.

Next, as shown in FIG. 1G, ashing is performed to remove the resist underlayer film 11 and the like.
Ashing for removing the resist underlayer film 11 and the like can be performed using oxygen, hydrogen gas, or the like.
The resist underlayer film 11 formed from the resist underlayer film material of the present invention is characterized by high etching resistance of the substrate to be processed and high ashing speed.

In addition, as shown in FIG. 1, the board | substrate 10 may be comprised by the base layer 10b and the to-be-processed layer 10a. The base layer 10b of the substrate 10 is not particularly limited, and is a layer to be processed (substrate to be processed) 10a made of Si, α-Si, p-Si, SiO ₂ , SiN, SiON, W, TiN, Al, or the like. Different materials are used. The layer to be processed _{10a, Si, SiO 2, SiON} , SiN, p-Si, α-Si, W, W-Si, Al, Cu, various low dielectric Al-Si, etc. (Low-k) film and A stopper film is used, and can usually be formed to a thickness of 50 to 10,000 nm, particularly 100 to 5,000 nm.
Since the resist underlayer film of the present invention has a high ashing speed and a short ashing time, it is particularly effective for processing a low-K film such as porous silica.

  The present invention is also a method of forming a pattern on a substrate by lithography, wherein at least a resist underlayer film material of the present invention is used to form a resist underlayer film on the substrate, and a photo resist is formed on the resist underlayer film. Forming a resist upper layer film of the resist composition to form a two-layer resist film, exposing the pattern circuit region of the two-layer resist film, developing with a developer to form a resist pattern on the resist upper layer film, The resist underlayer film is etched using the resist upper layer film on which the pattern is formed as a mask, and the substrate is etched using at least the resist lower layer film on which the pattern is formed as a mask to form a pattern on the substrate. There is provided a pattern forming method characterized by peeling an underlayer film.

Thus, the resist underlayer film material of the present invention can also be used as a material for forming a resist underlayer film in a two-layer resist process.
The two-layer resist process will be described more specifically with reference to FIG.
First, as shown in FIG. 2A, a resist lower layer film 11 and a resist upper layer film 13 of the present invention are formed on a substrate 10 in which a layer to be processed 10a is laminated on a base layer 10b.
In the two-layer resist process, the resist intermediate layer film 12 as described in the three-layer resist process of FIG. 1 is not provided, and the resist layer 13 and the resist lower layer film 11 are formed.
As the resist film 13, a polymer containing silicon is used. Examples of the silicon-containing polymer include silsesquioxane polymers, vinyl silane derivative polymers, siloxane pendant acrylic polymers, and the like.
The resist underlayer film 11 is the same as that described in the three-layer resist process.

Next, as shown in FIGS. 2B and 2C, exposure 14 and development are performed to obtain a resist pattern 13a.
Next, as shown in FIG. 2D, the resist lower layer film 11 is etched using the silicon-containing resist upper layer film 13 as a mask.
Next, as shown in FIG. 2E, the substrate 10 is etched using the resist underlayer film 11 on which the pattern is formed as a mask.
Finally, as shown in FIG. 2F, ashing is performed, and the resist underlayer film 11 is peeled off.
As shown in FIG. 2, the substrate 10 may be composed of a base layer 10b and a layer to be processed 10a. Examples of the layer to be processed 10a and the base layer 10b include those described in FIG.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not limited by the following Example.

[Synthesis Example 1]
To a 100 mL flask, 9.9 g of glycidyl methacrylate, 5.8 g of cyclohexyl vinyl ether, and 10 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of azobisisobutyronitrile (AIBN) was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio Glycidyl methacrylate: cyclohexyl vinyl ether = 0.7: 0.3 (molar ratio)
Molecular weight (Mw) = 9,300
Dispersity (Mw / Mn) = 1.93
This polymer is referred to as polymer 1.

[Synthesis Example 2]
To a 100 mL flask, 5.6 g of glycidyl methacrylate, 3.8 g of cyclohexyl vinyl ether, 2.9 g of maleic anhydride, and 10 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio Glycidyl methacrylate: cyclohexyl vinyl ether: maleic anhydride = 0.4: 0.3: 0.3 (molar ratio)
Molecular weight (Mw) = 8,800
Dispersity (Mw / Mn) = 1.61
This polymer is designated as Polymer 2.

[Synthesis Example 3]
To a 100 mL flask, 9.8 g of α-trifluoromethyl glycidyl acrylate, 6.3 g of cyclohexyl vinyl ether, and 10 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio α-trifluoromethyl glycidyl acrylate: cyclohexyl vinyl ether = 0.5: 0.5 (molar ratio)
Molecular weight (Mw) = 9,600
Dispersity (Mw / Mn) = 1.78
This polymer is designated as Polymer 3.

[Synthesis Example 4]
To a 100 mL flask, 5.6 g of glycidyl methacrylate, 3.8 g of cyclohexyl vinyl ether, 1.6 g of acrylonitrile, and 10 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio Glycidyl methacrylate: cyclohexyl vinyl ether: Acrylonitrile = 0.4: 0.3: 0.3 (molar ratio)
Molecular weight (Mw) = 8,800
Dispersity (Mw / Mn) = 1.78
This polymer is designated as polymer 4.

[Synthesis Example 5]
To a 100 mL flask, 7.1 g of glycidyl methacrylate, 3.8 g of cyclohexyl vinyl ether, 4.2 g of styrene, and 10 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio Glycidyl methacrylate: cyclohexyl vinyl ether: styrene = 0.5: 0.3: 0.2 (molar ratio)
Molecular weight (Mw) = 9,600
Dispersity (Mw / Mn) = 1.88
This polymer is designated as polymer 5.

[Synthesis Example 6]
To a 100 mL flask, 7.1 g of glycidyl methacrylate, 4.1 g of 2-norbornyl vinyl ether, 4.2 g of styrene, and 15 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio Glycidyl methacrylate: 2-norbornyl vinyl ether: Styrene = 0.5: 0.3: 0.2 (molar ratio)
Molecular weight (Mw) = 9,200
Dispersity (Mw / Mn) = 1.81
This polymer is designated as polymer 6.

[Synthesis Example 7]
To a 100 mL flask, 7.1 g of glycidyl methacrylate, 5.4 g of 2-decahydronaphthyl vinyl ether, 4.2 g of styrene, and 15 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio Glycidyl methacrylate: 2-decahydronaphthyl vinyl ether: Styrene = 0.5: 0.3: 0.2 (molar ratio)
Molecular weight (Mw) = 9,600
Dispersity (Mw / Mn) = 1.89
This polymer is designated as polymer 7.

[Synthesis Example 8]
To a 100 mL flask was added 7.1 g of glycidyl methacrylate, 12.5 g of the following monomer 1, 4.2 g of styrene, and 15 g of tetrahydrofuran as a solvent. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio Glycidyl methacrylate: monomer 1: styrene = 0.5: 0.3: 0.2 (molar ratio)
Molecular weight (Mw) = 10,200
Dispersity (Mw / Mn) = 1.92
This polymer is designated as polymer 8.

[Synthesis Example 9]
To a 100 mL flask, 7.1 g of glycidyl methacrylate, 22.7 g of the following monomer 2 and 20 g of tetrahydrofuran as a solvent were added. The reaction vessel was cooled to −70 ° C. in a nitrogen atmosphere, and vacuum degassing and nitrogen flow were repeated three times. After raising the temperature to room temperature, 0.2 g of AIBN was added as a polymerization initiator, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. This reaction solution was precipitated in 100 mL of isopropyl alcohol, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer.

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio Glycidyl methacrylate: monomer 2 = 0.5: 0.5 (molar ratio)
Molecular weight (Mw) = 13,800
Dispersity (Mw / Mn) = 1.78
This polymer is designated as polymer 9.

[Synthesis Example 10]
To a 100 mL flask, 2.4 g of 4-hydroxystyrene, 14.5 g of dicyclopentanyl vinyl ether, and 20 g of 1,2-dichloroethane as a solvent were added. In a nitrogen atmosphere, 0.5 g of trifluoroboron as a polymerization initiator was added to the reaction vessel, and the temperature was raised to 60 ° C., followed by reaction for 15 hours. The reaction solution was concentrated to 1/2 and precipitated in a mixed solution of 2.5 L of methanol and 0.2 L of water, and the resulting white solid was filtered and dried under reduced pressure at 60 ° C. to obtain a white polymer. .

The polymer was ¹³ C, ¹ H-NMR, and GPC, with the analytical results shown below.
Polymerization composition ratio 4-hydroxystyrene: dicyclopentanyl vinyl ether = 0.2: 0.8 (molar ratio)
Molecular weight (Mw) = 5,100
Dispersity (Mw / Mn) = 1.72
This polymer is designated as polymer 10.

  Moreover, as a polymer conventionally used, molecular weight (Mw) = 6,200, dispersion degree (Mw / Mn) = 5.3 m-cresol novolak, molecular weight (Mw) = 11,600, dispersion degree ( Mw / Mn) = 1.68 poly-p-hydroxystyrene was prepared.

[Preparation of resist underlayer film material]
FC-430 (manufactured by Sumitomo 3M Co.) 0.1 mass of the above polymers 1 to 10, blend oligomer 1, blend phenol low nuclei 1 to 3, crosslinker represented by CR1 and 2, and acid generator represented by AG1 The solution of the resist underlayer film materials (Examples 1 to 17 and Comparative Examples 1 and 2) is dissolved in an organic solvent containing 1% by the ratio shown in Table 1 and filtered through a 0.1 μm fluororesin filter. Each was prepared.

酸発生剤：ＡＧ１，ＡＧ２（下記構造式参照）

The composition of each resist underlayer film material in Table 1 is as follows.
Polymers 1 to 10: Polymers obtained in Synthesis Examples 1 to 10 Crosslinkers: CR1 and 2 (see the following structural formula)

Acid generator: AG1, AG2 (see structural formula below)

ブレンドフェノール低核体１〜３

有機溶剤：ＰＧＭＥＡ（プロピレングリコールモノメチルエーテルアセテート） Blend oligomer 1

Blend phenol low-nuclear body 1-3

Organic solvent: PGMEA (propylene glycol monomethyl ether acetate)

[Preparation of silicon-containing resist interlayer film material]
The polymer shown below (ArF silicon-containing intermediate layer polymer 1), the acid generator shown by AG1, in the proportion shown in Table 1 in an organic solvent containing 0.1% by mass of FC-430 (manufactured by Sumitomo 3M). A solution of the resist intermediate layer film material (SOG1) was prepared by dissolving and filtering through a 0.1 μm fluororesin filter.

酸発生剤：ＡＧ１（前記参照）
有機溶剤：ＰＧＭＥＡ（プロピレングリコールモノメチルエーテルアセテート） The composition of the resist intermediate layer material in Table 1 is as follows.
Polymer: ArF silicon-containing intermediate layer polymer 1 (see the following structural formula)

Acid generator: AG1 (see above)
Organic solvent: PGMEA (propylene glycol monomethyl ether acetate)

[Preparation of resist upper layer film material]
Next, an organic containing 0.1% by mass of the following polymer (ArF single layer resist polymer 1), an acid generator represented by PAG1, and a basic compound represented by TMMEA (manufactured by Sumitomo 3M) A solution of the resist upper layer film material (SL resist for ArF) was prepared by dissolving in a solvent at a ratio shown in Table 2 and filtering with a 0.1 μm fluororesin filter.

酸発生剤：ＰＡＧ１（下記構造式参照）

塩基性化合物：ＴＭＭＥＡ（下記構造式参照）

有機溶剤：ＰＧＭＥＡ（プロピレングリコールモノメチルエーテルアセテート） The composition of the resist upper layer film material in Table 2 is as follows.
Polymer: ArF single layer resist polymer 1 (see structural formula below)

Acid generator: PAG1 (see structural formula below)

Basic compound: TMMEA (see the following structural formula)

Organic solvent: PGMEA (propylene glycol monomethyl ether acetate)

[Etching test]
In the dry etching resistance test, the same lower layer films (Examples 1 to 17 and Comparative Examples 1 and 2) used for the refractive index measurement were prepared, and these lower layer films were formed with CF ₄ / CHF ₃ gas. The etching test was performed under the following condition (1). In this case, the difference in film thickness between the lower layer film and the resist before and after etching was measured using a dry etching apparatus TE-8500P manufactured by Tokyo Electron Limited. The results are shown in Table 3.
(Etching test with CF ₄ / CHF ₃ gas)
Etching conditions are as shown below.
Chamber pressure 40.0Pa
RF power 1,000W
Gap 9mm
CHF ₃ gas flow rate 30ml / min
CF ₄ gas flow rate 30ml / min
Ar gas flow rate 100ml / min
60 sec

[Ashing test]
Next, a solution of the resist underlayer film material (Examples 1 to 17 and Comparative Examples 1 and 2) prepared above is applied onto a Si (silicon) substrate and baked at 200 ° C. for 60 seconds to form a resist having a thickness of 300 nm. A lower layer film was formed.
The ashing speed was tested. This test was performed by ashing the formed resist underlayer film under the following conditions (O ₂ -based gas) using a dry etching apparatus TE-8500P manufactured by Tokyo Electron Limited.
(Ashing test with O ₂ gas)
The ashing conditions are as shown below.
Chamber pressure 40.0Pa
RF power 600W
Gap 9mm
O ₂ gas flow rate 5ml / min
N ₂ gas flow rate 500ml / min
Time 15sec

  And the film thickness difference of the resist underlayer film before and after ashing was measured. The results are shown in Table 4.

  In this test, it is confirmed that the resist underlayer film formed using the materials of Examples 1 to 17 has an etching rate comparable to that of cresol novolac resin and polyhydroxystyrene, and the ashing rate is very fast compared to these resins. did it.

[Observation of resist pattern shape after development]
Next, the resist pattern shape was tested.
First, a solution of a resist underlayer film material (Examples 1 to 17, Comparative Examples 1 and 2) was applied on a Si substrate and baked at 200 ° C. for 60 seconds to form a first resist underlayer film.
Further, a resist upper layer material (ArF SL resist) solution shown in Table 2 was applied thereon, and baked at 120 ° C. for 60 seconds to form a 180 nm thick resist upper layer film.
In this way, a laminated structure in which a resist lower layer film, a resist intermediate layer film, and a resist upper layer film were laminated on the substrate was formed.

Next, the formed resist upper layer film was exposed with an ArF exposure apparatus (manufactured by Nikon Corporation; S307E, NA 0.85, σ 0.93, 4/5 ring illumination, 6% transmittance halftone phase shift mask), The resist was baked (PEB) at 110 ° C. for 60 seconds and developed with an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution for 60 seconds to obtain a positive resist pattern. And the pattern shape of 0.08 micromL / S of the obtained pattern was observed.
At this time, pattern cross sections were observed with an electron microscope (S-4700) manufactured by Hitachi, Ltd., and the shapes were compared. The results are summarized in Table 5.

  Even when the resist underlayer film materials of Examples 1 to 17 were used, it was confirmed that the resist pattern shape after patterning was good as in the conventional resist underlayer film for a three-layer resist process.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

It is explanatory drawing which shows an example of the pattern formation method of this invention by a 3 layer resist process. It is explanatory drawing which shows an example of the pattern formation method of this invention by a two-layer resist process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate 10a Processed layer 10b Base layer 11 Resist lower layer film 12 Resist intermediate layer film 13 Resist upper layer film 14 Exposure

Claims (7)

  A resist underlayer film material of a multilayer resist film used in lithography, which is a repeating unit (A) derived from a monomer containing 10 mass% or more of hydrogen and 70 mass% or more of carbon and a repeating unit having a hydroxy group or an epoxy ring ( A resist underlayer film material comprising a polymer having B).   2. The polymer containing 10% by mass or more of repeating units (A) derived from a monomer containing 10% by mass or more of hydrogen and 70% by mass or more of carbon with respect to all repeating units. Resist underlayer film material. The resist underlayer film material according to claim 1 or 2, wherein the polymer includes a repeating unit (A) represented by the following general formula (1).

(In the formula, R ¹ is a linear, branched or cyclic alkyl group or alkenyl group having 4 to 40 carbon atoms, which may contain a hydroxy group or an ether group, and R ² is a hydrogen atom or a methyl group. , R ³ is a linear, branched or cyclic alkyl group having 18 to 40 carbon atoms, 0 ≦ a1 ≦ 1.0, 0 ≦ a2 ≦ 1.0, 0.1 ≦ a1 + a2 ≦ 1.0 Range.)   The resist underlayer film material according to claim 1, further comprising an organic solvent.   The resist underlayer film material according to any one of claims 1 to 4, further comprising at least one of an acid generator and a crosslinking agent.   A method of forming a pattern on a substrate by lithography, wherein a resist underlayer film is formed on a substrate using the resist underlayer film material according to any one of claims 1 to 5, and a photo resist is formed on the underlayer film. Forming a resist upper layer film by a resist composition to form a two-layer resist film, exposing a pattern circuit region of the two-layer resist film, developing with a developer to form a resist pattern on the resist upper layer film, The resist underlayer film with the pattern formed is used as a mask to etch the resist underlayer film, and then the substrate is etched with the pattern formed resist underlayer film as a mask to form a pattern on the substrate. A pattern forming method comprising peeling off an underlayer film.   A method of forming a pattern on a substrate by lithography, wherein a resist underlayer film is formed on the substrate using the resist underlayer film material according to any one of claims 1 to 5, and silicon is formed on the underlayer film. A resist intermediate layer film containing atoms is formed, a resist upper layer film formed of a photoresist composition is formed on the intermediate layer film to form a three-layer resist film, and a pattern circuit region of the resist three-layer film is exposed. Then, development is performed with a developer to form a resist pattern on the resist upper layer film, and the resist intermediate layer film is etched using the resist upper layer film on which the pattern is formed as a mask to form a resist intermediate layer film on which the pattern is formed. Etch the resist underlayer film as a mask, then etch the substrate using the resist underlayer film with the pattern as a mask to form a pattern on the substrate, A pattern forming method, which comprises carrying out the peeling of the resist underlayer film by ashing.

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