JP2007134678A - ナノチューブを用いる不揮発性メモリ素子 - Google Patents
ナノチューブを用いる不揮発性メモリ素子 Download PDFInfo
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- JP2007134678A JP2007134678A JP2006251222A JP2006251222A JP2007134678A JP 2007134678 A JP2007134678 A JP 2007134678A JP 2006251222 A JP2006251222 A JP 2006251222A JP 2006251222 A JP2006251222 A JP 2006251222A JP 2007134678 A JP2007134678 A JP 2007134678A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
- Y10S977/784—Electrically conducting, semi-conducting, or semi-insulating host material
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
【解決手段】基板と、前記基板上に互いに一定間隔をおいて配置される少なくとも2つの第1及び第2電極と、前記電極の間に設けられるものであって、静電気力によって第1電極または第2電極に選択的に接触する導電性ナノチューブと、導電性ナノチューブを支持する支持台と、を備える不揮発性メモリ素子である。本発明のメモリ素子は、基本的に消去が可能であり無電源状態でも情報の維持が可能な不揮発性メモリ素子であって、速い動作速度、高い集積度の具現が可能である。また、ビット別に消去が可能であるので、その応用分野が広い。
【選択図】図1
Description
10a 導電性支持台
11a 第1電極
11b 第2電極
12a、12b、12c スペーサ
Claims (7)
- 基板と、
前記基板上に相互一定間隔をおいて配置される少なくとも2つの第1及び第2電極と、
前記電極の間に設けられるものであって、静電気力によって前記第1電極または第2電極に選択的に接触する導電性ナノチューブと、
前記導電性ナノチューブを支持する支持台と、を備えることを特徴とする不揮発性ナノチューブメモリ素子。 - 前記導電性ナノチューブは、一端が前記支持台に固定されたカンチレバーであることを特徴とする請求項1に記載の不揮発性ナノチューブメモリ素子。
- 前記導電性ナノチューブは、その両端が支持される単純支持はりであることを特徴とする請求項1に記載の不揮発性ナノチューブメモリ素子。
- 前記第1及び第2電極とは別途に前記ナノチューブに対応する第3電極をさらに備えることを特徴とする請求項1に記載の不揮発性ナノチューブメモリ素子。
- 前記第1電極と前記ナノチューブとのギャップは、ナノチューブが弾性変形によって第1電極に接触した時、ナノチューブの弾性復原力がナノチューブと第1電極との間のファンデルワールス力に比べて小さくなるように設定されることを特徴とする請求項1に記載の不揮発性ナノチューブメモリ素子。
- 前記第2電極と前記ナノチューブとのギャップは、ナノチューブが弾性変形によって第2電極に接触した時、ナノチューブの弾性復原力がナノチューブと第2電極との間のファンデルワールス力に比べて大きくなるように設定されることを特徴とする請求項1ないし請求項5のうちいずれか一項に記載の不揮発性ナノチューブメモリ素子。
- 前記第2電極と前記ナノチューブとのギャップは、ナノチューブが弾性変形によって第2電極に接触した時、ナノチューブの弾性復原力がナノチューブと第2電極との間のファンデルワールス力に比べて大きくなるように設定されることを特徴とする請求項6に記載の不揮発性ナノチューブメモリ素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0107646 | 2005-11-10 | ||
KR1020050107646A KR100723412B1 (ko) | 2005-11-10 | 2005-11-10 | 나노튜브를 이용하는 비휘발성 메모리 소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007134678A true JP2007134678A (ja) | 2007-05-31 |
JP5052849B2 JP5052849B2 (ja) | 2012-10-17 |
Family
ID=38083032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006251222A Expired - Fee Related JP5052849B2 (ja) | 2005-11-10 | 2006-09-15 | ナノチューブを用いる不揮発性メモリ素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7812376B2 (ja) |
JP (1) | JP5052849B2 (ja) |
KR (1) | KR100723412B1 (ja) |
CN (2) | CN1964053B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007158332A (ja) * | 2005-12-01 | 2007-06-21 | Internatl Business Mach Corp <Ibm> | メモリ構造体およびメモリ構造体動作方法 |
JP2011512666A (ja) * | 2008-02-14 | 2011-04-21 | キャベンディッシュ・キネティックス・リミテッド | 3端子の複数回プログラム可能なメモリのビットセル及びアレイ構成 |
US8895952B2 (en) | 2011-02-28 | 2014-11-25 | Kabushiki Kaisha Toshiba | Nonvolatile storage device |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7211854B2 (en) * | 2003-06-09 | 2007-05-01 | Nantero, Inc. | Field effect devices having a gate controlled via a nanotube switching element |
KR100707212B1 (ko) * | 2006-03-08 | 2007-04-13 | 삼성전자주식회사 | 나노 와이어 메모리 소자 및 그 제조 방법 |
US7667260B2 (en) * | 2006-08-09 | 2010-02-23 | Micron Technology, Inc. | Nanoscale floating gate and methods of formation |
KR100799722B1 (ko) * | 2006-12-12 | 2008-02-01 | 삼성전자주식회사 | 메모리 소자 및 그 제조 방법 |
KR100842730B1 (ko) * | 2007-01-16 | 2008-07-01 | 삼성전자주식회사 | 멀티 비트 전기 기계적 메모리 소자 및 그의 제조방법 |
KR100878016B1 (ko) * | 2007-06-27 | 2009-01-13 | 삼성전자주식회사 | 스위치 소자 및 그 제조 방법 |
WO2009135017A1 (en) * | 2008-04-30 | 2009-11-05 | Cavendish Kinetics Inc. | Four-terminal multiple-time programmable memory bitcell and array architecture |
EP2557569A1 (en) | 2011-08-10 | 2013-02-13 | Thomson Licensing | Field programmable read-only memory device |
KR101425857B1 (ko) * | 2012-09-06 | 2014-07-31 | 서울대학교산학협력단 | 시냅스 모방 반도체 소자 및 그 동작방법 |
KR101444880B1 (ko) * | 2013-07-12 | 2014-09-26 | 한국과학기술원 | 전자 소자 및 그 제조방법 |
CN105514110B (zh) * | 2014-10-15 | 2018-01-05 | 国家纳米科学中心 | 一种基于单根多壁碳管的非易失性存储器及其制备方法 |
US20190198095A1 (en) * | 2017-12-25 | 2019-06-27 | Nanya Technology Corporation | Memory device |
CN113562690B (zh) * | 2020-04-28 | 2022-05-31 | 清华大学 | 纳米操纵器 |
Citations (3)
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JP2003504857A (ja) * | 1999-07-02 | 2003-02-04 | プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ | ナノスコピックワイヤを用いる装置、アレイおよびその製造方法 |
WO2004109708A2 (en) * | 2003-06-02 | 2004-12-16 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
JP2005514784A (ja) * | 2001-12-28 | 2005-05-19 | ナンテロ,インク. | 電気機械式3トレースジャンクション装置 |
Family Cites Families (6)
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US6674932B1 (en) * | 2000-12-14 | 2004-01-06 | Hewlett-Packard Development Company, L.P. | Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications |
US6924538B2 (en) * | 2001-07-25 | 2005-08-02 | Nantero, Inc. | Devices having vertically-disposed nanofabric articles and methods of making the same |
US7259410B2 (en) | 2001-07-25 | 2007-08-21 | Nantero, Inc. | Devices having horizontally-disposed nanofabric articles and methods of making the same |
KR100790859B1 (ko) * | 2002-11-15 | 2008-01-03 | 삼성전자주식회사 | 수직 나노튜브를 이용한 비휘발성 메모리 소자 |
KR100493166B1 (ko) * | 2002-12-30 | 2005-06-02 | 삼성전자주식회사 | 수직나노튜브를 이용한 메모리 |
US7652342B2 (en) * | 2004-06-18 | 2010-01-26 | Nantero, Inc. | Nanotube-based transfer devices and related circuits |
-
2005
- 2005-11-10 KR KR1020050107646A patent/KR100723412B1/ko not_active IP Right Cessation
-
2006
- 2006-09-15 JP JP2006251222A patent/JP5052849B2/ja not_active Expired - Fee Related
- 2006-10-26 CN CN2006101428074A patent/CN1964053B/zh not_active Expired - Fee Related
- 2006-10-26 CN CN201110272489.4A patent/CN102394110B/zh not_active Expired - Fee Related
- 2006-11-03 US US11/592,178 patent/US7812376B2/en not_active Expired - Fee Related
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JP2003504857A (ja) * | 1999-07-02 | 2003-02-04 | プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ | ナノスコピックワイヤを用いる装置、アレイおよびその製造方法 |
JP2005514784A (ja) * | 2001-12-28 | 2005-05-19 | ナンテロ,インク. | 電気機械式3トレースジャンクション装置 |
WO2004109708A2 (en) * | 2003-06-02 | 2004-12-16 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007158332A (ja) * | 2005-12-01 | 2007-06-21 | Internatl Business Mach Corp <Ibm> | メモリ構造体およびメモリ構造体動作方法 |
JP2011512666A (ja) * | 2008-02-14 | 2011-04-21 | キャベンディッシュ・キネティックス・リミテッド | 3端子の複数回プログラム可能なメモリのビットセル及びアレイ構成 |
US9019756B2 (en) | 2008-02-14 | 2015-04-28 | Cavendish Kinetics, Ltd | Architecture for device having cantilever electrode |
KR101558630B1 (ko) | 2008-02-14 | 2015-10-07 | 카벤디시 키네틱스, 엘티디. | 3-단자 다중-시간 프로그래밍가능한 메모리 비트셀 및 어레이 아키텍처 |
US8895952B2 (en) | 2011-02-28 | 2014-11-25 | Kabushiki Kaisha Toshiba | Nonvolatile storage device |
Also Published As
Publication number | Publication date |
---|---|
US20070132046A1 (en) | 2007-06-14 |
CN1964053A (zh) | 2007-05-16 |
CN102394110B (zh) | 2014-07-30 |
KR20070050272A (ko) | 2007-05-15 |
JP5052849B2 (ja) | 2012-10-17 |
CN1964053B (zh) | 2011-11-23 |
KR100723412B1 (ko) | 2007-05-30 |
CN102394110A (zh) | 2012-03-28 |
US7812376B2 (en) | 2010-10-12 |
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