JP2007116121A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
JP2007116121A
JP2007116121A JP2006254802A JP2006254802A JP2007116121A JP 2007116121 A JP2007116121 A JP 2007116121A JP 2006254802 A JP2006254802 A JP 2006254802A JP 2006254802 A JP2006254802 A JP 2006254802A JP 2007116121 A JP2007116121 A JP 2007116121A
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led chip
lens
light
sealing portion
emitting device
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JP2006254802A
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JP3918871B2 (en
Inventor
Sakuo Kamata
策雄 鎌田
Yasushi Nishioka
恭志 西岡
Yoji Urano
洋二 浦野
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Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device in which reliability and directivity are enhanced. <P>SOLUTION: The light emitting device comprises: a tubular frame 40 surrounding an LED chip 10 on the mounting surface side of a mounting substrate 20; an elastic sealing portion 50 formed by filling the inside of the frame 40 with silicon resin and sealing the LED chip 10 and bonding wires 14 and 14 connected with the LED chip 10; a lens 60 arranged on the sealing portion 50; and a domelike color transformation member 70 formed of a yellow phosphor excited by blue light radiated from the LED chip 10 and of a translucent material and arranged on the mounting surface side of the mounting substrate 20 to surround the lens 60 and the frame 40 thus forming an air layer 80 on the inside. The lens 60 is constituted of a biconvex lens. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

従来から、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップおよび当該LEDチップに接続されたボンディングワイヤを封止したエポキシ樹脂からなる封止部とを備え、封止部の一部を凸レンズ状の形状とすることで放射される光の指向性を高めた発光装置が提案されている(例えば、特許文献1)。なお、上記特許文献1には、青色光ないし紫外光を放射するLEDチップと当該LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体とを組み合わせることにより、白色を含めLEDチップの発光色とは異なる色合いの混色光を得る技術が開示されている。
特開2003−243724号公報
Conventionally, an LED chip, a mounting board on which the LED chip is mounted, and an epoxy resin sealing the LED chip and the bonding wire connected to the LED chip on the mounting surface side of the LED chip on the mounting board There has been proposed a light emitting device that has a directivity of light emitted by forming a part of the sealing portion into a convex lens shape (for example, Patent Document 1). In Patent Document 1, an LED chip that emits blue light or ultraviolet light and a phosphor that emits light of a color different from the emission color of the LED chip when excited by the light emitted from the LED chip. A technique for obtaining mixed color light having a hue different from the emission color of the LED chip including white is disclosed.
JP 2003-243724 A

しかしながら、上記特許文献1に記載の発光装置のように封止部の材料としてエポキシ樹脂を用いたものでは、封止部の耐候性が低く、しかも、LEDチップが青色光を放射する青色LEDチップの場合には封止部が青色光により劣化しやすいという不具合があった。   However, in the case where an epoxy resin is used as the material of the sealing portion as in the light emitting device described in Patent Document 1, the weather resistance of the sealing portion is low, and the blue LED chip emits blue light. In this case, there is a problem that the sealing portion is easily deteriorated by blue light.

本発明は上記事由に鑑みて為されたものであり、その目的は、信頼性および指向性を高めることが可能な発光装置を提供することにある。   The present invention has been made in view of the above-described reasons, and an object thereof is to provide a light-emitting device capable of improving reliability and directivity.

請求項1の発明は、LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップおよび当該LEDチップに電気的に接続されたボンディングワイヤを封止した透明樹脂からなり弾性を有する封止部と、封止部に重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体および透光性材料により形成されたものであって実装基板の前記実装面側でレンズおよび封止部を囲むドーム状の色変換部材とを備え、当該色変換部材の内側に空気層が形成され、レンズが両凸レンズからなることを特徴とする。   The invention of claim 1 seals an LED chip, a mounting substrate on which the LED chip is mounted, and a bonding wire electrically connected to the LED chip on the mounting surface side of the LED chip on the mounting substrate. The transparent sealing resin is made of an elastic sealing portion, the lens is placed on the sealing portion, and is excited by the light emitted from the LED chip to emit light of a color different from the emission color of the LED chip. A dome-shaped color conversion member that is formed of a phosphor and a light-transmitting material and surrounds the lens and the sealing portion on the mounting surface side of the mounting substrate, and an air layer is inside the color conversion member The lens is formed of a biconvex lens.

この発明によれば、封止部が弾性を有する透明樹脂により形成されているので、封止部がエポキシ樹脂により形成されている場合に比べて、封止部の信頼性を高めることができ、また、封止部に重ねて配置されたレンズを備え、レンズが両凸レンズからなるので、指向性を高めることが可能となる。また、実装基板におけるLEDチップの実装面側でレンズおよび封止部を囲むドーム状の色変換部材を備え、当該色変換部材の内側に空気層が形成されているので、LEDチップから放射される光と色変換部材の蛍光体から放射される光との混色光を得ることができるだけでなくレンズおよび封止部を保護することができ、しかも、色変換部材に外力が作用したときに色変換部材に発生した応力がレンズおよび封止部を通してLEDチップやボンディングワイヤに伝達されるのを抑制でき、前記外力に起因したLEDチップの発光特性の変動やボンディングワイヤの断線を抑制できるから、信頼性をより高めることができる。また、色変換部材の内側に空気層が形成されていることにより、色変換部材の蛍光体で発生した熱がLEDチップへ伝熱されるのを抑制することができる。   According to this invention, since the sealing part is formed of a transparent resin having elasticity, the reliability of the sealing part can be increased as compared with the case where the sealing part is formed of an epoxy resin, In addition, since the lens is provided so as to overlap the sealing portion, and the lens is a biconvex lens, directivity can be increased. Moreover, since the mounting surface side of the LED chip on the mounting substrate is provided with a dome-shaped color conversion member surrounding the lens and the sealing portion, and an air layer is formed inside the color conversion member, the LED chip emits the air layer. Not only can the light be mixed with the light emitted from the phosphor of the color conversion member, but also the lens and the sealing part can be protected, and color conversion is performed when an external force acts on the color conversion member. The stress generated in the member can be suppressed from being transmitted to the LED chip and the bonding wire through the lens and the sealing portion, and the variation in the light emitting characteristics of the LED chip and the disconnection of the bonding wire due to the external force can be suppressed, so the reliability Can be further enhanced. In addition, since the air layer is formed inside the color conversion member, heat generated in the phosphor of the color conversion member can be prevented from being transferred to the LED chip.

請求項2の発明は、請求項1の発明において、前記レンズは、前記光出射面が、前記封止部側の光入射面から入射した光を前記光出射面と前記空気層との境界で全反射させない凸曲面状に形成されてなることを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the lens is configured such that the light emitting surface receives light incident from the light incident surface on the sealing portion side at a boundary between the light emitting surface and the air layer. It is formed in a convex curved surface shape that does not totally reflect.

この発明によれば、前記LEDチップから放射された光が前記光出射面と前記空気層との境界で全反射されることなく前記色変換部材まで到達しやすくなり、全光束を高めることができる。   According to the present invention, the light emitted from the LED chip can easily reach the color conversion member without being totally reflected at the boundary between the light emitting surface and the air layer, and the total luminous flux can be increased. .

請求項3の発明は、請求項1または請求項2の発明において、前記実装基板における前記LEDチップの実装面側で封止部を囲んだ枠体を備え、当該枠体が前記封止部と同種の透明樹脂により形成されてなることを特徴とする。   The invention of claim 3 is the invention of claim 1 or claim 2, further comprising a frame body that encloses a sealing portion on the mounting surface side of the LED chip in the mounting substrate, and the frame body and the sealing portion. It is formed by the same kind of transparent resin.

この発明によれば、前記実装基板における前記LEDチップの実装面側で封止部を囲んだ枠体を備えているので、枠体によって前記封止部の形状を規定することができるから、金型などを用いることなく前記封止部を形成することができ、しかも、枠体が前記封止部と同じ透明樹脂により形成されているので、枠体と前記封止部との線膨張率差に起因した信頼性の低下を防止することができる。   According to this invention, since the frame body that encloses the sealing portion on the mounting surface side of the LED chip on the mounting substrate is provided, the shape of the sealing portion can be defined by the frame body. The sealing part can be formed without using a mold or the like, and the frame is formed of the same transparent resin as the sealing part, so the difference in linear expansion coefficient between the frame and the sealing part It is possible to prevent a decrease in reliability due to the above.

請求項1の発明では、信頼性および指向性を高めることができるという効果がある。   In the invention of claim 1, there is an effect that reliability and directivity can be improved.

(実施形態1)
以下、本実施形態の発光装置について図1〜図3を参照しながら説明する。
(Embodiment 1)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲む枠体40と、枠体40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10に電気的に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50と、封止部50に重ねて配置されるレンズ60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体および透光性材料(透明材料)により形成されたものであって実装基板20におけるLEDチップ10の実装面側でレンズ60および枠体40を囲みレンズ60の光出射面60bおよび枠体40の外側面との間に空気層80が形成される形で配設されるドーム状の色変換部材70とを備えている。   The light emitting device 1 of the present embodiment includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, a frame body 40 that surrounds the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20, and a frame body. A sealing portion 50 formed by filling a transparent resin material inside 40 and sealing the LED chip 10 and bonding wires 14 and 14 electrically connected to the LED chip 10 and having elasticity; and sealing A lens 60 arranged to overlap the unit 50, and a phosphor and a translucent material (transparent material) that are excited by the light emitted from the LED chip 10 and emit light of a color different from the emission color of the LED chip 10. The lens 60 and the frame body 40 are surrounded by the mounting surface side of the LED chip 10 on the mounting substrate 20, and the light emitting surface 60 b and the frame body of the lens 60 are formed. And a color conversion member 70 domed disposed in the form of an air layer 80 is formed between the outer surface of the 0.

なお、本実施形態の発光装置1は、例えばスポットライトなどの照明器具の光源として用いるものであり、例えば、シリカやアルミナなどのフィラーからなる充填材を含有し加熱時に低粘度化する樹脂シート(例えば、溶融シリカを高充填したエポキシ樹脂シートのような有機グリーンシート)により形成される絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に接合することで、LEDチップ10から器具本体100までの熱抵抗を小さくすることができて放熱性が向上し、LEDチップ10のジャンクション温度の温度上昇を抑制できるから、入力電力を大きくでき、光出力の高出力化を図れる。ここで、照明器具の光源として用いる場合には、所望の光出力が得られるように、器具本体100に複数個の発光装置1を実装して複数個の発光装置1を直列接続したり並列接続したりすればよい。   In addition, the light-emitting device 1 of this embodiment is used as a light source of a lighting fixture such as a spotlight, for example. For example, an instrument body 100 made of metal (for example, a metal having high thermal conductivity such as Al or Cu) is formed on an insulating layer 90 formed of an organic green sheet such as an epoxy resin sheet highly filled with fused silica. By joining, the thermal resistance from the LED chip 10 to the instrument body 100 can be reduced, heat dissipation can be improved, and the temperature rise of the junction temperature of the LED chip 10 can be suppressed. High output can be achieved. Here, when used as a light source of a lighting fixture, a plurality of light emitting devices 1 are mounted on the fixture main body 100 so that a desired light output is obtained, and the plurality of light emitting devices 1 are connected in series or in parallel. You can do it.

実装基板20は、熱伝導性材料からなりLEDチップ10が搭載される矩形板状の伝熱板21と、伝熱板21の一面側(図1における上面側)に固着された矩形板状の配線基板22とで構成され、配線基板22の中央部に伝熱板21におけるLEDチップ10の搭載面(上記一面の一部)を露出させる矩形状の窓孔24が形成されており、LEDチップ10が窓孔24の内側に配置されたサブマウント部材30を介して伝熱板21に搭載されている。したがって、LEDチップ10で発生した熱が配線基板22を介さずにサブマウント部材30を介して伝熱板21に伝熱されるようになっている。なお、本実施形態では、伝熱板21の熱伝導性材料として熱伝導率の高い金属であるCuを採用している(つまり、伝熱板21として金属板を採用している)が、熱伝導性材料としてはCuに限らず、例えば、Alのように熱伝導率の高い他の金属やこれら金属と同様に熱伝導率の高い非金属を採用してもよい。   The mounting substrate 20 is made of a heat conductive material and has a rectangular plate-like heat transfer plate 21 on which the LED chip 10 is mounted, and a rectangular plate-like shape fixed to one surface side (the upper surface side in FIG. 1) of the heat transfer plate 21. A rectangular window hole 24 that exposes the mounting surface (a part of the one surface) of the LED chip 10 in the heat transfer plate 21 is formed at the center of the wiring substrate 22. 10 is mounted on the heat transfer plate 21 via a submount member 30 disposed inside the window hole 24. Therefore, the heat generated in the LED chip 10 is transferred to the heat transfer plate 21 via the submount member 30 without passing through the wiring substrate 22. In this embodiment, Cu, which is a metal having high thermal conductivity, is adopted as the heat conductive material of the heat transfer plate 21 (that is, a metal plate is adopted as the heat transfer plate 21). The conductive material is not limited to Cu, and for example, other metals having high thermal conductivity such as Al or nonmetals having high thermal conductivity like these metals may be adopted.

上述の配線基板22は、ガラスエポキシ基板からなる絶縁性基材22aの一表面側に、LEDチップ10の各電極(図示せず)と電気的に接続される一対の給電用のリードパターン23,23が設けられている。各リードパターン23,23は、Cu膜とNi膜とAu膜との積層膜により構成されており、平面視において枠体40よりも内側の部位がインナーリード部23a,23aを構成し、色変換部材70よりも外側の部位がアウターリード部23b,23bを構成している。伝熱板21と配線基板22とは、絶縁性を有するシート状の接着フィルムからなる固着シート25を介して固着されている。なお、絶縁性基材22aの材料は、FR4のようなガラスエポキシ樹脂に限らず、例えば、ポリイミド系樹脂や、フェノール樹脂などでもよい。   The above-mentioned wiring board 22 has a pair of power supply lead patterns 23 electrically connected to each electrode (not shown) of the LED chip 10 on one surface side of an insulating base material 22a made of a glass epoxy board. 23 is provided. Each lead pattern 23, 23 is composed of a laminated film of a Cu film, a Ni film, and an Au film, and the portion inside the frame body 40 in the plan view constitutes the inner lead portions 23a, 23a, and color conversion is performed. Sites outside the member 70 constitute the outer lead portions 23b and 23b. The heat transfer plate 21 and the wiring board 22 are fixed via a fixing sheet 25 made of an insulating sheet-like adhesive film. In addition, the material of the insulating base material 22a is not limited to a glass epoxy resin such as FR4, and may be, for example, a polyimide resin or a phenol resin.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード側の電極であるアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10を、当該LEDチップ10の発光部12が導電性基板11よりも伝熱板21から離れた側となるように伝熱板21に搭載してあるが、発光部12が導電性基板11よりも伝熱板21に近い側となるように伝熱板21に搭載するようにしてもよい。光取り出し効率を考えた場合には、LEDチップ10の発光部12を伝熱板21から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12を伝熱板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light-emitting portion 12 is formed of a GaN-based compound semiconductor material on the main surface side of the conductive substrate 11 and has a laminated structure portion having, for example, a double hetero structure. ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In this embodiment, the LED chip 10 is mounted on the heat transfer plate 21 such that the light emitting portion 12 of the LED chip 10 is on the side farther from the heat transfer plate 21 than the conductive substrate 11. The light emitting unit 12 may be mounted on the heat transfer plate 21 so as to be closer to the heat transfer plate 21 than the conductive substrate 11. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting part 12 of the LED chip 10 on the side away from the heat transfer plate 21, but in this embodiment, the conductive substrate 11 and the light emitting part 12 are of the same level. Therefore, even if the light emitting unit 12 is arranged on the side close to the heat transfer plate 21, the light extraction loss does not become too large.

また、LEDチップ10は、上述の伝熱板21に、LEDチップ10のチップサイズよりも大きなサイズの矩形板状に形成されLEDチップ10と伝熱板21との線膨張率の差に起因してLEDチップ10に働く応力を緩和するサブマウント部材30を介して搭載されている。サブマウント部材30は、上記応力を緩和する機能だけでなく、LEDチップ10で発生した熱を伝熱板21においてLEDチップ10のチップサイズよりも広い範囲に伝熱させる熱伝導機能を有している。本実施形態では、サブマウント部材30の材料として熱伝導率が比較的高く且つ絶縁性を有するAlNを採用しており、LEDチップ10は、上記カソード電極がサブマウント部材30におけるLEDチップ10側の表面に設けられ上記カソード電極と接続される導体パターン31(図4参照)および金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14を介して一方のリードパターン23と電気的に接続され、上記アノード電極がボンディングワイヤ14を介して他方のリードパターン23と電気的に接続されている。なお、LEDチップ10とサブマウント部材30とは、例えば、SnPb、AuSn、SnAgCuなどの半田や、銀ペーストなどを用いて接合すればよいが、AuSn、SnAgCuなどの鉛フリー半田を用いて接合することが好ましい。また、サブマウント部材30は、導体パターン31の周囲に、LEDチップ10から放射された光を反射する反射膜32(図4参照)が形成されている。なお、反射膜32は、例えば、Ni膜とAg膜との積層膜により構成すればよい。   The LED chip 10 is formed on the above-described heat transfer plate 21 in a rectangular plate shape larger than the chip size of the LED chip 10, and is caused by a difference in linear expansion coefficient between the LED chip 10 and the heat transfer plate 21. The LED chip 10 is mounted via a submount member 30 that relieves stress. The submount member 30 has not only a function of relieving the stress but also a heat conduction function of transferring heat generated in the LED chip 10 to a range wider than the chip size of the LED chip 10 in the heat transfer plate 21. Yes. In the present embodiment, AlN having a relatively high thermal conductivity and insulation is used as the material of the submount member 30, and the LED chip 10 has the cathode electrode on the LED chip 10 side of the submount member 30. Electrically connected to one lead pattern 23 via a bonding wire 14 provided on the surface and connected to the cathode electrode (see FIG. 4) and a fine metal wire (for example, a gold fine wire, an aluminum fine wire, etc.) The anode electrode is electrically connected to the other lead pattern 23 via the bonding wire 14. The LED chip 10 and the submount member 30 may be bonded using, for example, solder such as SnPb, AuSn, SnAgCu, or silver paste, but may be bonded using lead-free solder such as AuSn, SnAgCu. It is preferable. In the submount member 30, a reflective film 32 (see FIG. 4) that reflects light emitted from the LED chip 10 is formed around the conductor pattern 31. Note that the reflection film 32 may be formed of a laminated film of a Ni film and an Ag film, for example.

サブマウント部材30の材料はAlNに限らず、線膨張率が導電性基板11の材料である6H−SiCに比較的近く且つ熱伝導率が比較的高い材料であればよく、例えば、複合SiC、Siなどを採用してもよい。   The material of the submount member 30 is not limited to AlN, and any material may be used as long as the linear expansion coefficient is relatively close to 6H—SiC that is the material of the conductive substrate 11 and the heat conductivity is relatively high. Si or the like may be employed.

ところで、本実施形態の発光装置1は、LEDチップ10およびサブマウント部材30それぞれの平面視における外周形状が正方形状であり、平面視においてLEDチップ10の外周線がサブマント部材30の外周線よりも内側に位置し且つ両外周線が並行しないようにLEDチップ10がサブマウント部材30の中央部で導体パターン31と接合されており、LEDチップ10の対角線とサブマウント部材30の対角線とが非平行となっている。より具体的には、LEDチップ10の対角線とサブマウント部材30の対角線とのなす角度が略45度となるようにLEDチップ10がサブマント部材30の中央部で導体パターン31に接合されている。なお、本実施形態では、窓孔24も平面視において正方形状となっている。   Incidentally, in the light emitting device 1 of the present embodiment, the outer peripheral shape of each of the LED chip 10 and the submount member 30 in a plan view is a square shape, and the outer peripheral line of the LED chip 10 in the plan view is more than the outer peripheral line of the submant member 30. The LED chip 10 is joined to the conductor pattern 31 at the center portion of the submount member 30 so as to be located on the inner side and the outer peripheral lines are not parallel, and the diagonal line of the LED chip 10 and the diagonal line of the submount member 30 are not parallel. It has become. More specifically, the LED chip 10 is bonded to the conductor pattern 31 at the center of the sub-mant member 30 so that the angle formed by the diagonal line of the LED chip 10 and the diagonal line of the sub-mount member 30 is approximately 45 degrees. In the present embodiment, the window hole 24 is also square in plan view.

また、上記アノード電極に電気的に接続されるボンディングワイヤ14はLEDチップ10の一表面の中央付近で上記アノード電極に接続され、上記カソード電極に電気的に接続されるボンディングワイヤ14は、LEDチップ10の1つの角部付近でサブマウント部材30の導体パターン31に接続されている。ここで、本実施形態では、各ボンディングワイヤ14,14がLEDチップ10の1つの対角線に沿った方向へ延出されているので、ボンディングワイヤ14,14に起因した光取出し効率の低下を抑制することができる。また、LEDチップ10とサブマウント部材30とが両者の外周線が並行するような位置関係にある場合に比べて、サブマウント部材30の平面サイズを小さくすることなく、LEDチップ10の1つの対角線に沿った方向へ延出されるボンディングワイヤ14の両端間の直線距離を短くすることができ、枠体40および発光装置1全体の小型化を図ることができる。要するに、サブマウント部材30による熱伝導機能を低下させることなく、ボンディングワイヤ14に起因した光取出し効率の低下を抑制することができるとともに、枠体40や発光装置1全体の小型化を図ることができる。   The bonding wire 14 electrically connected to the anode electrode is connected to the anode electrode near the center of one surface of the LED chip 10, and the bonding wire 14 electrically connected to the cathode electrode is connected to the LED chip. 10 is connected to the conductor pattern 31 of the submount member 30 in the vicinity of one corner. Here, in this embodiment, since each bonding wire 14 and 14 is extended in the direction along one diagonal of LED chip 10, the fall of the light extraction efficiency resulting from bonding wire 14 and 14 is suppressed. be able to. Further, one diagonal line of the LED chip 10 can be obtained without reducing the planar size of the submount member 30 as compared with the case where the LED chip 10 and the submount member 30 are in a positional relationship such that the outer peripheral lines of the LED chip 10 and the submount member 30 are parallel to each other. The linear distance between the both ends of the bonding wire 14 extended in the direction along the direction can be shortened, and the frame body 40 and the light emitting device 1 as a whole can be reduced in size. In short, it is possible to suppress a decrease in light extraction efficiency due to the bonding wire 14 without reducing the heat conduction function of the submount member 30 and to reduce the size of the frame body 40 and the light emitting device 1 as a whole. it can.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、アクリル樹脂などを用いてもよい。   Although the silicone resin is used as the transparent resin material of the sealing portion 50 described above, not only the silicone resin but also an acrylic resin may be used.

これに対して、枠体40は、円筒状の形状であって、透明樹脂により形成されている(透明樹脂の成形品により構成されている)が、当該透明樹脂としては、シリコーン樹脂を採用している。要するに、本実施形態では、封止部50の材料である透明樹脂の線膨張率と同等の線膨張率を有する同種の透明樹脂(透光性の材料)により枠体40を形成してある。ここに、本実施形態では、枠体40を実装基板20に固着した後で枠体40の内側に封止部50の透明樹脂を充填(ポッティング)して熱硬化させることで封止部50を形成してある。なお、封止部50の透明樹脂としてシリコーン樹脂に代えてアクリル樹脂を用いている場合には、枠体40をアクリル樹脂により形成することが望ましい。   On the other hand, the frame 40 has a cylindrical shape and is formed of a transparent resin (configured by a molded product of the transparent resin), and a silicone resin is used as the transparent resin. ing. In short, in this embodiment, the frame body 40 is formed of the same type of transparent resin (translucent material) having a linear expansion coefficient equivalent to that of the transparent resin that is the material of the sealing portion 50. Here, in this embodiment, after the frame body 40 is fixed to the mounting substrate 20, the transparent resin of the sealing portion 50 is filled (potted) inside the frame body 40 and thermally cured to thereby seal the sealing portion 50. It is formed. In addition, when using acrylic resin instead of silicone resin as transparent resin of the sealing part 50, it is desirable to form the frame 40 with acrylic resin.

レンズ60は、封止部50側の光入射面60aおよび光出射面60bそれぞれが凸曲面状に形成された両凸レンズにより構成されている。ここにおいて、レンズ60は、シリコーンにより形成されており(シリコーンの成形品により構成してあり)、封止部50と屈折率が同じ値となっているが、レンズ60は、シリコーンに限らず、例えば、アクリル樹脂により形成してもよい。   The lens 60 is composed of a biconvex lens in which each of the light incident surface 60a and the light emitting surface 60b on the sealing portion 50 side is formed in a convex curved surface shape. Here, the lens 60 is made of silicone (made of a silicone molded product) and has the same refractive index as that of the sealing portion 50. However, the lens 60 is not limited to silicone, For example, you may form with an acrylic resin.

ところで、レンズ60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されている。したがって、LEDチップ10から放射された光が光出射面60bと空気層80との境界で全反射されることなく色変換部材70まで到達しやすくなり、全光束を高めることができる。ここで、レンズ60は、当該レンズ60の光軸がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。なお、LEDチップ10の側面から放射された光は封止部50および空気層80を伝搬して色変換部材70まで到達し色変換部材70の蛍光体を励起したり蛍光体には衝突せずに色変換部材70を透過したりする。   By the way, the lens 60 has a light emitting surface 60b formed in a convex curved surface shape that does not totally reflect the light incident from the light incident surface 60a at the boundary between the light emitting surface 60b and the air layer 80 described above. Therefore, the light emitted from the LED chip 10 can easily reach the color conversion member 70 without being totally reflected at the boundary between the light emitting surface 60b and the air layer 80, and the total luminous flux can be increased. Here, the lens 60 is disposed so that the optical axis of the lens 60 is positioned on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50 and the air layer 80 to reach the color conversion member 70 and does not excite the phosphor of the color conversion member 70 or collide with the phosphor. Or the color conversion member 70 is transmitted.

色変換部材70は、シリコーンのような透光性材料(透明材料)とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置1は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透光性材料は、シリコーンに限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラス、有機成分と無機成分とがnmレベルもしくは分子レベルで混合、結合した有機・無機ハイブリッド材料などを採用してもよい。また、色変換部材70の材料として用いる透光性材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a mixture of a translucent material (transparent material) such as silicone and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10. It is comprised by the molded article of the mixed mixture. Therefore, in the light emitting device 1 of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light is obtained. Can do. Note that the translucent material used as the material of the color conversion member 70 is not limited to silicone, for example, an acrylic resin, an epoxy resin, glass, an organic / inorganic component mixed and bonded at the nm level or molecular level, and organic / An inorganic hybrid material or the like may be employed. Further, the phosphor mixed with the translucent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材70は、内面70aがレンズ60の光出射面60bに沿った形状に形成されている。したがって、レンズ60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の内面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。色変換部材70は、開口部の周縁を実装基板20に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。   Here, the color conversion member 70 has an inner surface 70 a formed in a shape along the light emitting surface 60 b of the lens 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the lens 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The color conversion member 70 may be bonded to the mounting substrate 20 using, for example, an adhesive (for example, a silicone resin, an epoxy resin, or the like) on the periphery of the opening.

なお、本実施形態の発光装置1の製造にあたっては、例えば、LEDチップ10をサブマウント部材30を介して実装基板20の伝熱板21に搭載してから、LEDチップ10の各電極と実装基板20における配線基板22のリードパターン23,23とを電気的に接続するワイヤボンディングを行い、その後、枠体40を実装基板20におけるLEDチップ10の実装面側に固着してから、封止部50の材料である透明樹脂を実装基板20と枠体40とで囲まれた空間に充填し、その後、レンズ60を枠体40上に載置してから、上記透明樹脂を熱硬化させることで封止部50を形成するのと同時に封止部50とレンズ60とを固着し、最後に、色変換部材70を接着剤などを用いて実装基板20に固着すればよい。   In manufacturing the light emitting device 1 of the present embodiment, for example, after the LED chip 10 is mounted on the heat transfer plate 21 of the mounting substrate 20 via the submount member 30, each electrode of the LED chip 10 and the mounting substrate are mounted. Wire bonding for electrically connecting the lead patterns 23 and 23 of the wiring board 22 in 20 is performed, and then the frame body 40 is fixed to the mounting surface side of the LED chip 10 in the mounting board 20, and then the sealing portion 50. A transparent resin, which is a material of the above, is filled in a space surrounded by the mounting substrate 20 and the frame body 40, and then the lens 60 is placed on the frame body 40, and then the transparent resin is thermoset to seal the resin. The sealing part 50 and the lens 60 may be fixed simultaneously with the formation of the stop part 50, and finally the color conversion member 70 may be fixed to the mounting substrate 20 using an adhesive or the like.

以上説明した本実施形態の発光装置1では、枠体40の内側でLEDチップ10およびボンディングワイヤ14,14を封止した透明樹脂からなり弾性を有する封止部50を備えているので、封止部50の材料として従来のようにエポキシ樹脂を用いる場合に比べて封止部50の耐候性を高めることができるとともに、LEDチップ10から放射された光による劣化が起こりにくくなる。   Since the light emitting device 1 of the present embodiment described above includes the elastic sealing portion 50 made of a transparent resin in which the LED chip 10 and the bonding wires 14 and 14 are sealed inside the frame body 40, the sealing is performed. The weather resistance of the sealing part 50 can be improved as compared with the conventional case where an epoxy resin is used as the material of the part 50, and deterioration due to light emitted from the LED chip 10 is less likely to occur.

ところで、枠体40の材料として例えばアルミニウムなどの金属材料を採用して枠体40をLEDチップ10から放射された光をレンズ60側へ反射するリフレクタとして用いることも考えられる。しかしながら、枠体40の材料としてアルミニウムを採用した場合には、封止部50の材料であるシリコーン樹脂の線膨張率が枠体40の材料であるアルミニウムの線膨張率の10倍以上の値であり、−40℃の低温期間と80℃の高温期間とを交互に繰り返すヒートサイクル試験(温度サイクル試験)を行うと、両者の線膨張率差に起因してヒートサイクル試験の低温時に封止部50中にボイドが発生してしまう。   By the way, it is also conceivable that a metal material such as aluminum is used as the material of the frame body 40 and the frame body 40 is used as a reflector that reflects light emitted from the LED chip 10 toward the lens 60 side. However, when aluminum is adopted as the material of the frame body 40, the linear expansion coefficient of the silicone resin that is the material of the sealing portion 50 is a value that is 10 times or more the linear expansion coefficient of aluminum that is the material of the frame body 40. Yes, when a heat cycle test (temperature cycle test) in which a low temperature period of −40 ° C. and a high temperature period of 80 ° C. are alternately repeated is performed, a sealing portion is formed at a low temperature of the heat cycle test due to a difference in linear expansion coefficient between the two. Voids are generated in 50.

これに対して、本実施形態の発光装置1では、枠体40が透明樹脂により形成されているので、枠体40が金属材料により形成されている場合に比べて枠体40と封止部50との線膨張率差を小さくすることができ、ヒートサイクル試験の低温時に封止部50にボイドが発生するのを抑制することができるから、信頼性を高めることができる。要するに、本実施形態の発光装置1では、実装基板20におけるLEDチップ10の実装面側で封止部50を囲んだ枠体40を備えているので、枠体40によって封止部50の形状を規定することができるから、金型などを用いることなく封止部50を形成することができ、しかも、枠体40が封止部50と同じ透明樹脂により形成されているので、枠体40と封止部50との線膨張率差に起因した信頼性の低下を防止することができる。   On the other hand, in the light emitting device 1 according to the present embodiment, since the frame body 40 is formed of a transparent resin, the frame body 40 and the sealing portion 50 are compared to the case where the frame body 40 is formed of a metal material. The linear expansion coefficient difference can be reduced, and the generation of voids in the sealing portion 50 at the low temperature of the heat cycle test can be suppressed, so that the reliability can be improved. In short, since the light emitting device 1 of the present embodiment includes the frame body 40 that surrounds the sealing portion 50 on the mounting surface side of the LED chip 10 on the mounting substrate 20, the shape of the sealing portion 50 is changed by the frame body 40. Since the sealing portion 50 can be formed without using a mold or the like, and since the frame body 40 is formed of the same transparent resin as the sealing portion 50, A decrease in reliability due to a difference in linear expansion coefficient with the sealing unit 50 can be prevented.

また、本実施形態の発光装置1では、封止部50とは別に形成された両凸レンズからなるレンズ60が封止部50に重ねて固着されているので、放射する光の指向性を高めることができ、特にスポットライトなどの照明器具のように指向性の要求の高い照明器具の光源として適している。   Further, in the light emitting device 1 of the present embodiment, since the lens 60 made of a biconvex lens formed separately from the sealing portion 50 is fixed to the sealing portion 50 in an overlapping manner, the directivity of the emitted light is improved. In particular, it is suitable as a light source for a luminaire having a high directivity requirement such as a luminaire such as a spotlight.

また、本実施形態の発光装置1では、色変換部材70はレンズ60の光出射面60bおよび枠体40の外側面との間に空気層80が形成される形で配設すればよく(つまり、色変換部材は、内側に空気層80が形成される形で配設すればよく)、色変換部材70をレンズ60および枠体40に密着させる必要がないので、色変換部材70の寸法精度や位置決め精度に起因した歩留まりの低下を抑制できる。また、本実施形態の発光装置1では、組立時に色変換部材70の組付けが最終工程となるので、LEDチップ10の発光波長に応じて透明材料に対する蛍光体の配合を調整した色変換部材70を用いることで色ばらつきを低減することもできる。   Further, in the light emitting device 1 of the present embodiment, the color conversion member 70 may be disposed in a form in which an air layer 80 is formed between the light emitting surface 60b of the lens 60 and the outer surface of the frame body 40 (that is, The color conversion member only needs to be disposed in such a manner that the air layer 80 is formed on the inner side), and the color conversion member 70 does not need to be in close contact with the lens 60 and the frame body 40. And a decrease in yield due to positioning accuracy can be suppressed. Further, in the light emitting device 1 of the present embodiment, since the assembly of the color conversion member 70 is the final process at the time of assembly, the color conversion member 70 in which the blending of the phosphor with respect to the transparent material is adjusted according to the emission wavelength of the LED chip 10. By using, color variations can be reduced.

また、本実施形態の発光装置1では、上述のように色変換部材70とレンズ60との間に空気層80が形成されているので、色変換部材70に外力が作用したときに色変換部材70が変形してレンズ60に当接する可能性が低くなって上記外力により色変換部材70に発生した応力がレンズ60および封止部50を通してLEDチップ10や各ボンディングワイヤ14,14に伝達されるのを抑制でき、上記外力によるLEDチップ10の発光特性の変動や各ボンディングワイヤ14,14の断線が起こりにくくなるから、信頼性が向上するという利点がある。また、色変換部材70とレンズ60との間に上記空気層80が形成されていることにより、外部雰囲気中の水分がLEDチップ10に到達しにくくなるという利点や、色変換部材70の蛍光体で発生した熱がLEDチップ10へ伝熱されるのを抑制することができるという利点がある。   Further, in the light emitting device 1 of the present embodiment, since the air layer 80 is formed between the color conversion member 70 and the lens 60 as described above, the color conversion member when an external force acts on the color conversion member 70. The possibility that the lens 70 is deformed and abutted against the lens 60 is reduced, and the stress generated in the color conversion member 70 due to the external force is transmitted to the LED chip 10 and the bonding wires 14 and 14 through the lens 60 and the sealing portion 50. Therefore, there is an advantage that reliability is improved because fluctuations in the light emission characteristics of the LED chip 10 due to the external force and disconnection of the bonding wires 14 and 14 are less likely to occur. Further, since the air layer 80 is formed between the color conversion member 70 and the lens 60, the moisture in the external atmosphere hardly reaches the LED chip 10, and the phosphor of the color conversion member 70 There is an advantage that it is possible to suppress the heat generated in step 1 from being transferred to the LED chip 10.

また、色変換部材70とレンズ60との間に上記空気層80が形成されていることにより、LEDチップ10から放射され封止部50およびレンズ60を通して色変換部材70に入射し当該色変換部材70中の黄色蛍光体の粒子により散乱された光のうちレンズ60側へ散乱されてレンズ60を透過する光の光量を低減できて装置全体としての外部への光取り出し効率を向上できるという利点がある。   In addition, since the air layer 80 is formed between the color conversion member 70 and the lens 60, the color conversion member 70 is emitted from the LED chip 10 and enters the color conversion member 70 through the sealing portion 50 and the lens 60. Among the light scattered by the yellow phosphor particles in 70, there is an advantage that the amount of light scattered to the lens 60 side and transmitted through the lens 60 can be reduced, and the light extraction efficiency to the outside as the entire apparatus can be improved. is there.

ここで、図5(a),(b)に示すように、色変換部材70の光軸とLEDチップ10の光軸とが一致しており、色変換部材70における光軸方向の中央の位置PでLEDチップ10からの青色光が全方位に散乱されたとし、色変換部材70と空気層80との界面での全反射角をφa、色変換部材70と当該色変換部材70の外側の媒質である空気との界面での全反射角をφb、位置Pで散乱された光に関して色変換部材70の内面70a側のエスケープコーンECaの広がり角を2θa、位置Pで散乱された光に関して色変換部材70の外面70b側のエスケープコーンECbの広がり角を2θbとすれば、図5(a)に示すように全反射角φa,φbが40°のときには2θa=60°、2θb=98°となり、図5(b)に示すように全反射角φa,φbが50°のときには2θa=76°、2θb=134°となる。   Here, as shown in FIGS. 5A and 5B, the optical axis of the color conversion member 70 and the optical axis of the LED chip 10 coincide with each other, and the central position of the color conversion member 70 in the optical axis direction. It is assumed that the blue light from the LED chip 10 is scattered in all directions by P, the total reflection angle at the interface between the color conversion member 70 and the air layer 80 is φa, and the color conversion member 70 and the outside of the color conversion member 70 are outside. The total reflection angle at the interface with air, which is the medium, is φb, and the light scattered at the position P is 2θa, the spread angle of the escape cone ECa on the inner surface 70a side of the color conversion member 70, and the color is scattered with respect to the light scattered at the position P. If the spread angle of the escape cone ECb on the outer surface 70b side of the conversion member 70 is 2θb, as shown in FIG. 5A, when the total reflection angles φa and φb are 40 °, 2θa = 60 ° and 2θb = 98 °. , The total reflection angle as shown in FIG. When φa and φb are 50 °, 2θa = 76 ° and 2θb = 134 °.

ここにおいて、色変換部材70に用いている透光性材料(透明材料)の屈折率をn、位置Pで散乱され内面70a側のエスケープコーンECaを通して放出される青色光の最大放出効率をηとすれば、η=(1/4n2)×100〔%〕で表されるので、上述のように透光性材料としてシリコーンを用いている場合には、n=1.4として、η≒13%となる。したがって、色変換部材70とレンズ60との間に空気層80が形成されていない場合には、位置Pで散乱された青色光の50%がレンズ60に戻ってしまうのに対して、空気層80を形成したことにより、位置Pで散乱された青色光の13%しかレンズ60に戻らなくなるので、青色光による封止部50の劣化を抑制できる。なお、エスケープコーンECaを通して放出される青色光を少なくするには、色変換部材70の厚みを大きくすることが望ましい。 Here, the refractive index of the translucent material (transparent material) used for the color conversion member 70 is n, and the maximum emission efficiency of blue light scattered at the position P and emitted through the escape cone ECa on the inner surface 70a side is η. In this case, since η = (1/4 n 2 ) × 100 [%], when silicone is used as the translucent material as described above, n = 1.4 and η≈13 %. Therefore, when the air layer 80 is not formed between the color conversion member 70 and the lens 60, 50% of the blue light scattered at the position P returns to the lens 60, whereas the air layer Since 80 is formed, only 13% of the blue light scattered at the position P returns to the lens 60, so that deterioration of the sealing portion 50 due to the blue light can be suppressed. In order to reduce the blue light emitted through the escape cone ECa, it is desirable to increase the thickness of the color conversion member 70.

また、本実施形態における発光装置1は、サブマウント部材30の厚み寸法を、当該サブマウント部材30の表面が配線基板22の表面よりも伝熱板21から離れるように設定してあり、LEDチップ10から側方に放射された光が配線基板22の窓孔24の内周面を通して配線基板22に吸収されるのを防止することができるとともに、LEDチップ10から側方に放射された光が色変換部材70と実装基板20との接合部を通して出射されるのを防止することができる。また、上述のように、サブマウント部材30におけるLEDチップ10の接合部位の周囲に、LEDチップ10から放射された光を反射する反射膜32を形成してあるので、LEDチップ10から側方に放射された光がサブマウント部材30に吸収されるのを防止することができ、外部への光取出し効率を高めることが可能となる。   Further, in the light emitting device 1 according to the present embodiment, the thickness dimension of the submount member 30 is set so that the surface of the submount member 30 is further away from the heat transfer plate 21 than the surface of the wiring substrate 22. It is possible to prevent the light radiated laterally from 10 from being absorbed by the wiring substrate 22 through the inner peripheral surface of the window hole 24 of the wiring substrate 22 and the light radiated laterally from the LED chip 10. The light can be prevented from being emitted through the joint portion between the color conversion member 70 and the mounting substrate 20. In addition, as described above, the reflective film 32 that reflects the light emitted from the LED chip 10 is formed around the bonding portion of the LED chip 10 in the submount member 30, so that the LED chip 10 is laterally formed. It is possible to prevent the emitted light from being absorbed by the submount member 30 and to increase the light extraction efficiency to the outside.

(実施形態2)
以下、本実施形態の発光装置について図6〜図8に基づいて説明する。
(Embodiment 2)
Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置1の基本構成は実施形態1と略同じであって、レンズ60と枠体40とが同一の透光性材料(例えば、シリコーンなど)により一体成形されている点などが相違する。なお、実施形態1と同様の構成要素には同一の符号を付して説明を省略する。   The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the first embodiment, and the lens 60 and the frame 40 are integrally formed of the same translucent material (for example, silicone). Is different. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 1, and description is abbreviate | omitted.

また、本実施形態における配線基板22は、絶縁性基材22aにおける伝熱板21側とは反対の表面側に、リードパターン23,23および絶縁性基材22aにおいてリードパターン23,23が形成されていない部位を覆う白色系の樹脂からなるレジスト層26(図6および図8参照)が積層されている。したがって、LEDチップ10の側面から放射されレジスト層26の表面に入射した光がレジスト層26の表面で反射されるので、LEDチップ10から放射された光が配線基板22における伝熱板21側とは反対の表面を通して吸収されるのを防止することができ、外部への光取り出し効率の向上による光出力の向上を図れる。   Further, in the wiring board 22 in the present embodiment, the lead patterns 23 and 23 and the lead patterns 23 and 23 are formed in the insulating base material 22a on the surface side opposite to the heat transfer plate 21 side in the insulating base material 22a. A resist layer 26 (see FIG. 6 and FIG. 8) made of a white resin covering a portion that is not present is laminated. Therefore, the light emitted from the side surface of the LED chip 10 and incident on the surface of the resist layer 26 is reflected by the surface of the resist layer 26, so that the light emitted from the LED chip 10 is connected to the heat transfer plate 21 side in the wiring substrate 22. Can be prevented from being absorbed through the opposite surface, and the light output can be improved by improving the light extraction efficiency to the outside.

ここにおいて、レジスト層26は、配線基板22の窓孔24の近傍において各リードパターン23,23のインナーリード部23a,23aを露出させる円形状の開口窓26aが形成され、配線基板22の周部において各導体パターン23,23のアウターリード部23b,23bそれぞれを露出させる円形状の開口窓26b,26bが形成されている。   Here, the resist layer 26 is formed with circular opening windows 26 a that expose the inner lead portions 23 a and 23 a of the lead patterns 23 and 23 in the vicinity of the window holes 24 of the wiring substrate 22. Are formed with circular opening windows 26b and 26b for exposing the outer lead portions 23b and 23b of the conductor patterns 23 and 23, respectively.

ここにおいて、レンズ60と枠体40とは上述のように、同一の透光性材料(例えば、シリコーンなど)により一体成形されており(言い換えれば、レンズ60と枠体40とが連続一体に形成されており)、封止部50と屈折率および線膨張率が同じ値となっている。なお、レンズ60と枠体40とは封止部50の透明樹脂の屈折率および弾性率を下回らない透光性材料により形成すればよく、例えば、封止樹脂がアクリル樹脂である場合には、レンズ60と枠体40とをアクリル樹脂により一体成形してもよい。また、レンズ60および枠体40の材料として採用する透光性材料は、封止部50の透明樹脂の線膨張率と同等の線膨張率を有していればよい。   Here, as described above, the lens 60 and the frame body 40 are integrally formed of the same translucent material (for example, silicone) (in other words, the lens 60 and the frame body 40 are integrally formed integrally. The refractive index and the linear expansion coefficient are the same as those of the sealing portion 50. The lens 60 and the frame body 40 may be formed of a translucent material that does not fall below the refractive index and elastic modulus of the transparent resin of the sealing portion 50. For example, when the sealing resin is an acrylic resin, The lens 60 and the frame body 40 may be integrally formed with an acrylic resin. Moreover, the translucent material employ | adopted as a material of the lens 60 and the frame 40 should just have a linear expansion coefficient equivalent to the linear expansion coefficient of the transparent resin of the sealing part 50. FIG.

また、本実施形態の発光装置は、LEDチップ10が、実装基板20の最表面(レジスト層26の表面)を含む平面から当該平面の法線方向に離間した位置に配置されており、レンズ60と枠体40とで構成されるレンズブロックにおいてレンズ60と枠体40とで囲まれた空間がLEDチップ10を収納する収納凹部を構成している。   In the light emitting device of the present embodiment, the LED chip 10 is disposed at a position separated from the plane including the outermost surface (the surface of the resist layer 26) of the mounting substrate 20 in the normal direction of the plane. The space surrounded by the lens 60 and the frame body 40 in the lens block constituted by the frame body 40 constitutes a housing recess for housing the LED chip 10.

本実施形態の発光装置の製造方法としては、図10に示すように、LEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、レンズ60と枠体40とで囲まれる空間に上述の封止部50となる液状の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50cを注入してから、レンズ60を実装基板20との間に枠体40が介在する形で実装基板20に対向配置して透明樹脂材料50cを硬化させることにより封止部50を形成するような製造方法が考えられる。しかしながら、このような製造方法では、製造過程において封止部50にボイドが発生する恐れがある。   As a manufacturing method of the light emitting device of this embodiment, as shown in FIG. 10, after the LED chip 10 and the bonding wires 14 and 14 are electrically connected, the space surrounded by the lens 60 and the frame body 40 is described above. A mounting substrate in which the frame 40 is interposed between the lens 60 and the mounting substrate 20 after injecting a liquid transparent resin material (for example, a sealing resin made of silicone resin) 50c to be the sealing portion 50 A manufacturing method is conceivable in which the sealing portion 50 is formed by placing the transparent resin material 50c opposite to the substrate 20 and curing the transparent resin material 50c. However, in such a manufacturing method, a void may occur in the sealing portion 50 during the manufacturing process.

そこで、本実施形態の発光装置1の製造にあたっては、図9に示すように、実装基板20にLEDチップ10を実装してLEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、LEDチップ10およびボンディングワイヤ14,14を封止部50の一部となる液状の第1の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50aにより覆ってから、レンズ60と枠体40とで囲まれる空間に第1の透明樹脂材料50aと同一材料からなり封止部50の他の部分となる液状の第2の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50bを注入し、その後、レンズ60を実装基板20との間に枠体40が介在する形で実装基板20に対向配置して各透明樹脂材料50a,50bを硬化させることにより封止部50を形成するようにしている。このような製造方法によれば、製造過程で封止部50にボイドが発生しにくくなり、信頼性が高く且つ光出力が大きな発光装置1を提供することができる。ここで、第2の透明樹脂材料50bを注入する前に、第1の透明樹脂材料50aを硬化させておけば、第1の透明樹脂材料50aの粘度が低下し上記収納凹部内に閉じ込められたボイドが抜けやすくなるという利点がある。なお、本実施形態では、実装基板20のレジスト層26の中央部に形成された円形状の開口窓26aの内径を色変換部材70の最大外径よりもやや大きな寸法に設定してあり、第1の透明樹脂材料50aをポッティングした際に開口窓26aの内周面近傍まで流れ込んだ第1の透明樹脂材料50aを、色変換部材70と実装基板20とを接合する接着剤として利用している。   Therefore, in manufacturing the light emitting device 1 of the present embodiment, as shown in FIG. 9, after the LED chip 10 is mounted on the mounting substrate 20 and the LED chip 10 and the bonding wires 14 and 14 are electrically connected, The LED chip 10 and the bonding wires 14 and 14 are covered with a liquid first transparent resin material (for example, a sealing resin made of silicone resin) 50a that becomes a part of the sealing portion 50, and then the lens 60 and the frame body 40 are covered. A liquid second transparent resin material (for example, a sealing resin made of silicone resin) 50b made of the same material as the first transparent resin material 50a and serving as another part of the sealing portion 50 is injected into the space surrounded by Thereafter, the transparent resin materials 50a and 50b are cured by disposing the lens 60 opposite to the mounting substrate 20 with the frame body 40 interposed between the lens 60 and the mounting substrate 20. And so as to form the sealing portion 50. According to such a manufacturing method, it is difficult to generate a void in the sealing portion 50 during the manufacturing process, and it is possible to provide the light emitting device 1 with high reliability and high light output. Here, if the first transparent resin material 50a is cured before injecting the second transparent resin material 50b, the viscosity of the first transparent resin material 50a is lowered and trapped in the storage recess. There is an advantage that voids are easily removed. In the present embodiment, the inner diameter of the circular opening window 26a formed in the central portion of the resist layer 26 of the mounting substrate 20 is set to be slightly larger than the maximum outer diameter of the color conversion member 70. When the first transparent resin material 50a is potted, the first transparent resin material 50a that has flowed to the vicinity of the inner peripheral surface of the opening window 26a is used as an adhesive that joins the color conversion member 70 and the mounting substrate 20. .

以上説明した本実施形態の発光装置1では、レンズ60と枠体40とが同一の透光性材料により一体成形されているので、レンズ60と枠体40とが別部材である場合に比べて部品点数を少なくできるとともに、LEDチップ10とレンズ60との光軸のずれに起因した光出力の低下を防止することができる。   In the light emitting device 1 of the present embodiment described above, the lens 60 and the frame body 40 are integrally formed of the same translucent material, so that the lens 60 and the frame body 40 are separate members compared to the case where the lens 60 and the frame body 40 are separate members. It is possible to reduce the number of parts and to prevent a decrease in light output due to the deviation of the optical axis between the LED chip 10 and the lens 60.

(実施形態3)
以下、本実施形態の発光装置1について図11に基づいて説明する。
(Embodiment 3)
Hereinafter, the light-emitting device 1 of this embodiment is demonstrated based on FIG.

本実施形態の発光装置1の基本構成は実施形態2と略同じであって、レジスト層26の中央部の開口窓26aの内径を色変換部材70の最大内径よりもやや小さく設定してあり、色変換部材70における実装基板20側の端縁とレジスト層26における開口窓26aの周部とを全周に亘って接着剤からなる接合部75により接合している点が相違する。なお、実施形態2と同様の構成要素には同一の符号を付して説明を省略する。   The basic configuration of the light emitting device 1 of the present embodiment is substantially the same as that of the second embodiment, and the inner diameter of the opening window 26a at the center of the resist layer 26 is set slightly smaller than the maximum inner diameter of the color conversion member 70. The difference is that the edge of the color conversion member 70 on the mounting substrate 20 side and the peripheral portion of the opening window 26a in the resist layer 26 are joined together by a joint portion 75 made of an adhesive over the entire circumference. In addition, the same code | symbol is attached | subjected to the component similar to Embodiment 2, and description is abbreviate | omitted.

したがって、本実施形態の発光装置1の製造にあたっては、実施形態2と同様、図12に示すように、実装基板20にLEDチップ10を実装してLEDチップ10とボンディングワイヤ14,14とを電気的に接続した後、LEDチップ10およびボンディングワイヤ14,14を封止部50の一部となる液状の第1の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50aにより覆ってから、レンズ60と枠体40とで囲まれる空間に第1の透明樹脂材料50aと同一材料からなり封止部50の他の部分となる液状の第2の透明樹脂材料(例えば、シリコーン樹脂からなる封止樹脂)50bを注入し、その後、レンズ60を実装基板20との間に枠体40が介在する形で実装基板20に対向配置して各透明樹脂材料50a,50bを硬化させることにより封止部50を形成するようにしている。ここにおいて、本実施形態の発光装置1の製造にあたっては、レジスト層26により、色変換部材70の接合部位まで第1の透明樹脂材料50aが流出するのを防止しており、色変換部材70の実装基板20側の端縁と実装基板20とを接着剤により接合しているので、色変換部材70と実装基板20との間に介在する接合部75の厚みの制御が容易になるとともに、色変換部材70と実装基板20との接合の信頼性が向上する。なお、接合部75の接着剤としては、色変換部材70と同じ材料を用いるのが望ましい。   Therefore, in manufacturing the light emitting device 1 of the present embodiment, as in the second embodiment, as shown in FIG. 12, the LED chip 10 is mounted on the mounting substrate 20 and the LED chip 10 and the bonding wires 14 and 14 are electrically connected. After the connection, the LED chip 10 and the bonding wires 14 and 14 are covered with a liquid first transparent resin material (for example, a sealing resin made of silicone resin) 50a which becomes a part of the sealing portion 50, In a space surrounded by the lens 60 and the frame body 40, a liquid second transparent resin material (for example, a seal made of silicone resin) made of the same material as the first transparent resin material 50a and forming the other part of the sealing portion 50 is used. (Stopping resin) 50b is injected, and then the lens 60 is disposed opposite to the mounting substrate 20 with the frame body 40 interposed between them and the transparent resin materials 50a, 5 And so as to form a sealing portion 50 formed by curing the b. Here, in manufacturing the light emitting device 1 of the present embodiment, the resist layer 26 prevents the first transparent resin material 50a from flowing out to the joint portion of the color conversion member 70. Since the edge on the mounting substrate 20 side and the mounting substrate 20 are bonded with an adhesive, the thickness of the bonding portion 75 interposed between the color conversion member 70 and the mounting substrate 20 can be easily controlled, and the color The reliability of joining between the conversion member 70 and the mounting substrate 20 is improved. In addition, it is desirable to use the same material as the color conversion member 70 as the adhesive of the joint portion 75.

ところで、上述の各実施形態では、LEDチップ10として、発光色が青色の青色LEDチップを採用しており、導電性基板11としてSiC基板を採用しているが、SiC基板の代わりにGaN基板を用いてもよく、SiC基板やGaN基板を用いた場合には結晶成長用基板として絶縁体であるサファイア基板を用いている場合に比べて、結晶成長用基板の熱伝導率が高く結晶成長用基板の熱抵抗を小さくできる。また、LEDチップ10の発光色は青色に限らず、例えば、赤色、緑色などでもよい。すなわち、LEDチップ10の発光部12の材料はGaN系化合物半導体材料に限らず、LEDチップ10の発光色に応じて、GaAs系化合物半導体材料やGaP系化合物半導体材料などを採用してもよい。また、導電性基板11もSiC基板に限らず、発光部12の材料に応じて、例えば、GaAs基板、GsP基板などから適宜選択すればよい。   By the way, in each of the above-described embodiments, a blue LED chip whose emission color is blue is adopted as the LED chip 10, and a SiC substrate is adopted as the conductive substrate 11, but a GaN substrate is used instead of the SiC substrate. If a SiC substrate or a GaN substrate is used, the crystal growth substrate has a higher thermal conductivity than the case where an insulator sapphire substrate is used as the crystal growth substrate. The thermal resistance can be reduced. Further, the light emission color of the LED chip 10 is not limited to blue, and may be, for example, red or green. That is, the material of the light-emitting portion 12 of the LED chip 10 is not limited to the GaN-based compound semiconductor material, and a GaAs-based compound semiconductor material, a GaP-based compound semiconductor material, or the like may be employed according to the emission color of the LED chip 10. Further, the conductive substrate 11 is not limited to the SiC substrate, and may be appropriately selected from, for example, a GaAs substrate and a GsP substrate according to the material of the light emitting unit 12.

実施形態1の発光装置の概略断面図である。1 is a schematic cross-sectional view of a light emitting device according to Embodiment 1. FIG. 同上を示し、一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view which showed the same and partially fractured | ruptured. 同上を示す要部概略平面図である。It is a principal part schematic plan view which shows the same as the above. 同上におけるサブマウント部材の概略斜視図である。It is a schematic perspective view of the submount member in the same as the above. 同上の要部説明図である。It is principal part explanatory drawing same as the above. 実施形態2の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 2. FIG. 同上の発光装置の一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view in which the light emitting device same as the above was partially broken. 同上の発光装置における配線基板の概略平面図である。It is a schematic plan view of the wiring board in the above light emitting device. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above. 実施形態3の発光装置の概略断面図である。6 is a schematic cross-sectional view of a light emitting device according to Embodiment 3. FIG. 同上の発光装置の製造方法の説明図である。It is explanatory drawing of the manufacturing method of a light-emitting device same as the above.

符号の説明Explanation of symbols

10 LEDチップ
14 ボンディングワイヤ
20 実装基板
40 枠体
50 封止部
60 レンズ
60a 光入射面
60b 光出射面
70 色変換部材
80 空気層
DESCRIPTION OF SYMBOLS 10 LED chip 14 Bonding wire 20 Mounting board 40 Frame 50 Sealing part 60 Lens 60a Light incident surface 60b Light output surface 70 Color conversion member 80 Air layer

Claims (3)

LEDチップと、LEDチップが実装された実装基板と、当該実装基板におけるLEDチップの実装面側でLEDチップおよび当該LEDチップに電気的に接続されたボンディングワイヤを封止した透明樹脂からなり弾性を有する封止部と、封止部に重ねて配置されたレンズと、LEDチップから放射された光によって励起されてLEDチップの発光色とは異なる色の光を放射する蛍光体および透光性材料により形成されたものであって実装基板の前記実装面側でレンズおよび封止部を囲むドーム状の色変換部材とを備え、当該色変換部材の内側に空気層が形成され、レンズが両凸レンズからなることを特徴とする発光装置。   It is made up of an LED chip, a mounting substrate on which the LED chip is mounted, and a transparent resin that seals the LED chip and the bonding wire electrically connected to the LED chip on the mounting surface side of the LED chip on the mounting substrate. A sealing portion having a lens, a lens disposed on the sealing portion, and a phosphor and a translucent material that are excited by light emitted from the LED chip and emit light of a color different from the emission color of the LED chip A dome-shaped color conversion member that surrounds the lens and the sealing portion on the mounting surface side of the mounting substrate, an air layer is formed inside the color conversion member, and the lens is a biconvex lens A light-emitting device comprising: 前記レンズは、前記光出射面が、前記封止部側の光入射面から入射した光を前記光出射面と前記空気層との境界で全反射させない凸曲面状に形成されてなることを特徴とする請求項1記載の発光装置。   In the lens, the light exit surface is formed in a convex curved surface shape that does not totally reflect the light incident from the light incident surface on the sealing portion side at the boundary between the light exit surface and the air layer. The light-emitting device according to claim 1. 前記実装基板における前記LEDチップの実装面側で封止部を囲んだ枠体を備え、当該枠体が前記封止部と同種の透明樹脂により形成されてなることを特徴とする請求項1または請求項2記載の発光装置。   2. A frame body that encloses a sealing portion on a mounting surface side of the LED chip on the mounting substrate, and the frame body is formed of the same kind of transparent resin as the sealing portion. The light emitting device according to claim 2.
JP2006254802A 2005-09-20 2006-09-20 Light emitting device Active JP3918871B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008305855A (en) * 2007-06-05 2008-12-18 Panasonic Electric Works Co Ltd Light-emitting device
JP2011171357A (en) * 2010-02-16 2011-09-01 Stanley Electric Co Ltd Light emitting device and method of manufacturing the same
JP2016195099A (en) * 2015-03-31 2016-11-17 株式会社小糸製作所 Light source unit, manufacturing method of light source unit, and vehicle lamp fitting

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008305855A (en) * 2007-06-05 2008-12-18 Panasonic Electric Works Co Ltd Light-emitting device
JP2011171357A (en) * 2010-02-16 2011-09-01 Stanley Electric Co Ltd Light emitting device and method of manufacturing the same
JP2016195099A (en) * 2015-03-31 2016-11-17 株式会社小糸製作所 Light source unit, manufacturing method of light source unit, and vehicle lamp fitting

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