JP2007115453A - Charged particle beam device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle beam device collectively processing an intended layer of an intended area of a sample within a short time, realizing inspection, analysis, and fine processing or the like by the charged particle beam, since a conventional charged particle beam device was not provided with such a function enabling to collectively process an intended area of some hundred micron or larger in high speed. <P>SOLUTION: The charged particle beam device is constituted so as to be able to arrange gas supply sources 109, 114, 401, 501, and an electrode connected to a plasma power source at neighborhood of an intended area. By the above, a multiple function, such as local plasma processing, and inspection, analysis, fine processing using charged particle beam or the like, is realized. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

The present invention relates to a charged particle beam apparatus for inspecting and analyzing devices and the like, and a charged particle beam apparatus for preparing a sample for analysis.

There is a growing need for inspection and analysis of semiconductor devices that are becoming finer. Among them, in failure analysis for identifying the cause of failure, it is an essential technique to accurately process a desired position into a form that can be analyzed. That is, in order to observe a cross section with a scanning electron microscope (hereinafter referred to as “SEM”), it is necessary to accurately drill a hole at a desired position as a cross section, and a transmission electron microscope (hereinafter referred to as “TEM”). In the case of analysis by the above method, it is necessary to form a thin film having a thickness of about 0.1 μm including a desired position. In recent years, a focused ion beam (hereinafter referred to as FIB) processing apparatus has been effectively used for these processes. In general, FIB can accelerate a gallium cation and accurately process a desired position using a beam focused to sub-micron or less. This FIB can be processed accurately at a submicron level, but for that purpose, it is necessary to accurately recognize the processing target of the device to be processed.
For example, even if the wafer coordinates of the defective position are specified in another inspection apparatus, it is necessary to position at the 0.1 μm level with the recent miniaturization of devices. However, in reality, considering the driving error of the sample stage and the like, positioning by only the wafer coordinates is very difficult. Therefore, actual positioning is performed by recognizing a device pattern on the wafer surface using a secondary electron image (hereinafter referred to as SIM) by FIB ion beam scanning.
However, it is not always possible to observe a pattern for determining the target position on the wafer surface. In this case, a method of removing the upper layer material up to a layer having a recognizable pattern is taken. Since the FIB can be processed by physical sputtering as described above, the desired pattern can be exposed by scanning the region near the target position and removing the upper layer material.

  In addition, chemical reactions are used to increase the processing speed compared to conventional FIB processing.

FIB assisted etching method is
Is shown in Here, the FIB-assisted etching method supplies an etching assist gas to the sample surface, and irradiates the FIB where the etching gas is adsorbed on the surface, so that only the FIB irradiation position causes a chemical reaction, and the conventional FIB. Compared with machining, high-speed machining can be performed.

Japanese Patent No. 2619435

  In the conventional FIB processing, in an ion beam optical system having a focusing condition suitable for fine processing, it is difficult to form a large current beam due to lens shape limitations and the like. Therefore, the beam current that can be used in the conventional FIB processing is generally about several tens of nA at most. Here, taking the processing time of DRAM (Dynamic Random Access Memory), which is a typical semiconductor device, as an example, when processing a 200μm square area to a depth of 0.5μm with 20nA FIB, it takes about 1 hour of processing. It takes time.

  Therefore, if FIB-assisted etching by FIB-assisted etching is performed, speed-up processing is possible, but in general, the speed is only increased by about one digit. Further, when processing a wider area, the processing time increases in proportion to the increase in area. As described above, since FIB is a processing by fine beam scanning, it is very effective for fine processing, but is not very suitable for batch processing of a large area.

  In addition, FIB-assisted etching using chemical reaction is effective when removing a layer of a specific material, but in reality, the surface is irradiated with gallium ions accelerated at about 30 kV, so the influence of physical sputtering is avoided. I can't. That is, for example, even when the assist gas that reacts with the material of the upper layer that is desired to be removed does not chemically react with the material of the layer that is desired to be exposed (remained), the layer that is desired to be exposed by physical sputtering is also subject to processing damage.

  For this reason, it is necessary to provide a processing function that solves these problems, batches a desired area in a short time, and removes only a desired layer.

  As means for solving these problems, in the present invention, in a charged particle beam apparatus for irradiating a sample with a charged particle beam, a local area of the sample is formed by a gas supply unit for supplying a gas to the sample surface and a unit for converting the gas into plasma. Provide technology that enables batch processing.

  According to the present invention, it is possible to realize chemical batch processing of a large area with little damage caused by ion beam irradiation outside the sample processing region. For this reason, failure analysis in a short time can be realized, and it can also contribute to yield improvement in the semiconductor process.

  A specific embodiment in which a function capable of realizing local collective processing by plasma is combined with a charged particle processing apparatus will be described below.

In the present embodiment, the configuration of an actual charged particle beam apparatus according to the present invention will be described.
FIG. 1 shows a configuration of a sample processing apparatus that shares a plasma processing function with a focused ion beam. In this embodiment, a focused ion beam is used for explanation, but a projection ion beam may be used. The sample processing apparatus includes a movable sample stage 102 on which a sample substrate such as a semiconductor wafer 101 is placed, a sample position control apparatus 103 that controls the position of the sample stage 102 in order to specify an observation and processing position of the wafer 101, and a wafer. An ion beam optical system 105 that performs processing by irradiating an ion beam 104 to 101 and a secondary electron detector 106 that detects secondary electrons from the wafer 101 are included. The ion beam optical system 105 is controlled by an ion beam optical system controller 107, and the secondary electron detector 106 is controlled by a secondary electron detector controller 108. A gas supply source 109 that supplies a gas used for ion beam assisted etching or ion beam assisted deposition is controlled by a gas supply source control device 110 such as a gas supply position, a heater temperature, and valve opening / closing. The ion beam optical system controller 107, the secondary electron detector controller 108, the gas supply source controller 110, the sample position controller 103, and the like are controlled by the central processing unit 111. The sample stage 102, the ion beam optical system 105, the secondary electron detector 106, the gas supply source 109, and the like are disposed in the vacuum vessel 112. Here, the sample is a wafer, and the fact that the entire wafer can be observed is advantageous in that it is easy to manage the address of the desired observation position and can be directly transferred from the inspection apparatus. However, the sample need not be limited to a wafer, and may be a chip sample, or may be configured such that the sample chamber and the sample stage can be formed small and easily. This is advantageous because it can be manufactured at a low cost in terms of apparatus cost. The above is the configuration of the main FIB apparatus. In this embodiment, the local plasma generation function for batch processing is realized by the following configuration. That is, the gas supply source 109 can supply not only the FIB assist gas but also a plasma processing gas. This has a gas switching device 113 for switching a plurality of gas sources 114 and the like, and this gas switching device 113 is controlled by a gas supply source control device 110. The gas switching device 113 can also have a function of controlling the pressure of the gas to be supplied, and the pressure can be switched between plasma and assist gas. By making it possible to select gases suitable for plasma processing and ion beam processing using assist gas, it is possible to select optimum processing conditions according to the desired processing shape and the like. Here, the cylinder-shaped gas supply source 109 has been described with reference to FIG. 1. However, in the case where the same plasma gas needs to be selected in various ways depending on the material of the sample to be processed, a gas cartridge as shown in FIG. It is effective to adopt a detachable form such as 1101. As a result, by connecting the gas cartridge 1101 containing the desired gas to the cartridge fixture 1102, it becomes possible to deal with various materials. By preparing the gas cartridge 1103 for FIB assist etching and the gas cartridge 1104 for FIB assist deposition, it becomes possible to perform various processes.

  Here, the switching function is described when the plasma gas and the FIB assist processing gas are different. However, these gases may be the same, and in this case, the present invention can be realized without the switching function. Further, for example, the gas source 114 can be incorporated in the gas supply source 109. Here, as a power supply for generating plasma, a power source 115 for applying a voltage is connected between the tip of the gas supply source 109 and the sample stage 102, and is controlled by the plasma voltage controller 116. This plasma voltage control device 116 is also controlled by the central processing unit 111. The generation state of the plasma can be confirmed through the optical window 117. In addition to the optical window, it is also possible to confirm the plasma generation state by arranging a CCD element or the like inside the vacuum vessel 112.

FIG. 2 shows an enlarged view of the front end of the gas supply source 109 where the plasma is generated and the processing area of the wafer. The tip 201 of the gas supply source 109 has a nozzle shape, and the gas supplied from the gas source 114 or the like is blown as a gas 203 against the sample surface 202 (showing one portion) of the wafer. . Further, the tip 201 is configured through an insulating structure 204 that is electrically insulated from the chamber body, so that a voltage can be applied. The insulating structure 204 is made of, for example, an insulator or an insulating resin, and has a cylindrical shape having a gas supply hole. The voltage application is connected to the power supply 115 via the conductive wire 205. Here, the conducting wire 205 is, for example, a coaxial cable or the like. Here, FIG. 3 shows a circuit example of the power supply 115 that supplies a voltage to the conductive wire 205. In FIG. 3, the vacuum vessel 112, the gas switching device 113, and the like are omitted in the figure for the purpose of explaining the circuit, but actually exist. The conducting wire 205 is connected to the power supply 115 via a current introduction terminal or the like. The other end of the power supply 115 is also connected to the sample stage 102 via a current introduction terminal or the like and connected to the sample 101. In this example, the wafer 101 side (sample stage 102 side) is grounded, and a high frequency power supply 301 is used as an applied voltage, which is applied to the tip 201 of the gas supply source via the capacitor 302. The high frequency power supply 301 applies a high frequency of 13.56 MHz, for example. The capacitor 302 has a role of blocking direct current. Here, the high frequency power supply 301 also has an impedance matching function. Plasma can be generated between the nozzle tip 201 and the sample surface 202 by ionizing the high-frequency voltage using this circuit while supplying gas from the nozzle-like tip 201. This gas has a high gas pressure only between the nozzle tip 201 and the sample surface 202 to which it is blown, and in this example, the gas pressure is several tens of Pa or more. As a result, a plasma of about several mm from the mean free path can be generated. That is, in the case of this example, only the region of several mm can be plasma processed. Moreover, since the ion acceleration voltage from the plasma on the sample surface 202 side is reduced by using the wafer 101 on the ground electrode side in this way, chemical etching that is less affected by processing due to the momentum of ions can be realized. . For this reason, for example, for removal of SiO _{2 and the} like on the sample surface, more selective processing can be realized by using a gas containing fluorine such as CF ₄ . By doing so, it becomes possible to remove only the layer of the target material.

  Conversely, it is possible to connect the high-frequency power source through the capacitor from the sample stage 102 side and set the nozzle tip 201 side of the gas supply source 109 to the ground potential. Since the bias voltage can be increased and sputtering utilizing the momentum of ions can be used effectively, anisotropic etching with relatively little material dependency is possible. This is effective when a device in which various structures are complicated is processed relatively uniformly. In this case, in order to suppress the chemical reaction, more physical sputtering can be performed by using a rare gas such as argon as a gas.

  In the above, the example which uses a high frequency power supply for plasma generation was demonstrated. When the sample is a semiconductor or an insulator, the sample itself does not serve as an electrode, so high frequency is required as described above. However, when the sample is a conductor, the sample itself can serve as an electrode, so a high-frequency power source is not necessarily required, and plasma generation at a direct current, low frequency, or the like is also possible.

Next, FIG. 4 shows an example using a gas supply source having a confined tip shape. The tip container 402 of the gas supply source 401 shown in FIG. 4A has a box shape and is open to the sample surface 202. By bringing this open end (lower side in FIG. 4A) closer to the sample surface 202, the gas can be confined at a high pressure. Since the sample surface 202 is not actually touched, the gas flows out through the sample surface, but the gas pressure can be kept high by continuously supplying the gas. Further, a hole 403 is formed, and the sample can be irradiated with the ion beam 104 through this hole. As a result, ion beam assist deposition and assist etching can be performed. In order to explain the details of this structure, a cross-sectional structure is shown in FIG. The main body of the gas supply source 401 is connected as a gas path to the tip container 402 through the hole 406, and the gas 407 is supplied. The side wall 405 to which this 406 is connected is made of an insulator. On the other hand, the upper surface of the tip container 402 is an electrode 408, and a high frequency voltage is applied from the conducting wire 404. With such a structure, plasma can be generated between the electrode 408 and the sample surface 202, and the sample surface 202 can be plasma processed. Further, the gas 407 is changed to XeF ₂ for ion beam assisted etching, W (CO) ₆ for ion beam assisted deposition, and the like, and the ion beam is irradiated from the hole 403 so that ion beam assisted etching or ion beam assisted deposition is performed. Can be realized. Although the side wall 405 is described as an insulator in FIG. 4, the ion beam apparatus may be coated with a conductive film because the influence of the beam due to charging may become a problem if the insulator is near the ion beam irradiation position. Is also possible. However, in this case, it is essential that the electrodes 408 and the sample surface 202 be separated in terms of potential. Further, it is preferable that the electrode 408 has a ground potential at the time of ion beam irradiation because the ion beam is not affected. In this case, unlike the open type shown in FIG. 2, it is easy to increase the gas pressure, and plasma can be generated in a finer region. Further, since the inner container 402 is a confining type, it is possible to limit the plasma processing region, and it is possible to process only a desired region. Thus, by making the cross section facing the sample surface of the gas supply source into a shape combined with the device structure, high-speed processing of a region shape suitable for the device structure can be realized. Further, it is desirable that the opening at the front end of the gas flow path and the sample stage are substantially parallel to improve the processing accuracy. However, since the device structure is generally rectangular, the case of a rectangular confinement container has been described. However, in addition to the rectangle, plasma can be generated even if the cross section is circular or elliptical, and the same effect is obtained. can get.

  By using the charged particle beam apparatus described in this embodiment, it is possible to realize both local batch processing and fine processing using an ion beam by plasma.

  In the present embodiment, an example of an apparatus capable of performing combined processing that can be collectively performed with plasma and fine processing with a focused ion beam has been described. However, the same effect can be obtained with a projection ion beam as well as a charged ion beam. That is, the projection ion beam is suitable for batch processing of a relatively large area as compared with the focused ion beam, but it still cannot obtain a processing speed as high as the batch processing of plasma. Moreover, there is a sufficient effect even if the charged particle beam is used as an electron beam. That is, there is a request for removing the upper layer even during inspection and analysis using an electron beam. In this case, batch processing of a local region by plasma is effective. Although the processing speed is not as high as that of the ion beam, electron beam assist etching and electron beam assist deposition using assist gas are also used in the case of an electron beam, but this replaces the ion beam in FIG. 1 with an electron beam. This can be realized with a different configuration.

  As described above, inspection, analysis, processing, and the like can be realized in a short time by the combined apparatus of charged particle beam function and local plasma processing. Also, by using a charged ion beam as a focused ion beam or a projection ion beam, it is possible to combine the batch processing using plasma and the fine processing using ion beam. In addition, it has a gas pressure switching function that can switch the gas pressure at the time of high frequency voltage application higher than the gas pressure at the time of charged particle beam irradiation, so that gas with gas pressure suitable for plasma processing and ion beam processing can be obtained. It becomes possible to supply.

  In this embodiment, a configuration of a charged particle beam apparatus using inductively coupled plasma will be described.

  In the first embodiment, generation of capacitively coupled plasma using a capacitor as a plasma power source has been basically described. However, FIG. 5 shows an apparatus configuration for generating inductively coupled plasma unlike that. The configuration other than the tip of the gas supply source 501 is substantially the same as that in FIG. The tip container 502 has a confined configuration similar to that in FIG. 4, but has no electrodes, and has a coil 503 on the top surface of the tip container 502. Here, although it is described with one turn for the sake of illustration, it usually has a form of multiple turns. The planar coil 503 is connected to a high frequency power source through a conductive wire 504. Here, unlike the circuit of FIG. 3, no capacitor is required. However, an impedance matching function is necessary. Similarly to the case of FIG. 4, a hole 505 is provided on the upper surface of the tip container 503, and an ion beam can be irradiated onto the sample surface 202 through the tip container 502, and ion beam assisted etching or ion beam assisted deposition is possible. It can be performed.

  FIG. 5B is a cross-sectional view. The gas 506 supplied from the gas supply source 501 is supplied into the tip container 502 through the hole 507. The tip container 502 is made of an insulator such as glass. However, a metal film can be formed on the outside of the tip container 502 as long as it is electrically separated from the coil 503 and the conductive wire 504. In this case, the influence on the ion beam due to charging can be suppressed.

  Similarly to the above, the configuration of the inductively coupled plasma may be a cylindrical tip container 601 shown in FIG. Here, as shown in FIG. 6A, the coil 602 is exemplified as a configuration wound around the outer side of the tip container 601. FIG. 6B is a cross-sectional view.

  Here, FIGS. 5 and 6 are described as rectangular tip containers, but local plasma processing can be realized even if the cross section is circular or the like (that is, cylindrical or the like).

  By using inductive plasma in this way, there is no need to bring the electrode into contact with the plasma, so that there is an advantage that the electrode is not sputtered by the plasma and is not contaminated. In addition, it is possible to generate a relatively high density plasma in a wide pressure range.

  In this embodiment, a configuration of a charged particle beam apparatus capable of driving an electrode for generating plasma independently of a sample will be described.

  FIG. 7 shows the apparatus configuration. Description of portions overlapping with those in FIG. 1 is omitted. The manipulator 701 has an electrode 702 at the tip, and can drive the electrode 702 independently of the sample stage 102 and move it to a desired position. This manipulator is connected to a manipulator control device 703. The electrode 702 is connected to a power source 704 for generating plasma, and the power source 704 is controlled by a plasma voltage controller 705. The manipulator control device 703 and the plasma voltage control device 705 are controlled by the central processing unit 111 together with other ion beam optical systems and the like.

  In the case of this configuration, supply of gas from the gas supply source 706 and application of plasma voltage to the electrode 702 can be controlled completely independently. Therefore, it is not necessary to connect an electric circuit to the gas supply source as shown in FIG. 2 or to form the insulating structure 202, and a simple configuration can be realized. That is, in this embodiment, first, a gas used for plasma is supplied from the gas supply source 706 to the sample surface of the wafer 101, the electrode 702 is moved over the position where batch processing is desired, and a plasma voltage is applied. As a result, plasma is generated between the electrode 702 and the wafer 101 to realize plasma batch processing. Since the region to be processed by the ion beam is generally several tens of μm or less, it is sufficient that the processing region by plasma is several mm. In general, since the size of one chip is 5 cm or less, an area smaller than the chip size may be processed. In other words, the processing may be performed with the electrode size set to the chip size or less. For example, the size of the electrode 702 used in this embodiment is 1 cm square. The distance between the surface of the wafer 101 and the electrode 702 is about 1 cm. As a result, a region approximately 1 cm square can be collectively processed. Of course, the electrode 702 can be further reduced, the electrode can be brought closer to the surface of the wafer 101, and further local processing can be performed. However, in this case, it is necessary to increase the gas pressure in order to generate plasma. Here, an example of a square electrode has been described, but it may be a circle or the like. In the case of the configuration of FIG. 7, when performing ion beam assisted etching or ion beam assisted deposition, the electrode 702 is retracted from the ion beam optical axis, and the supply gas is changed by the switching device 113 to the ion beam assisted etching gas or ion beam. This can be realized by switching to assist deposition gas and irradiating with an ion beam. Furthermore, if the electrode 702 of the manipulator 701 is replaced with a probe (not shown), it can be used for extracting a micro sample by ion beam processing.

  As described above, plasma can be formed under more flexible conditions by separately configuring the gas supply source and the electrode. In addition, it is possible to use various electrode shapes that do not depend on the nozzle shape of the gas by holding a microelectrode smaller than the chip size with a manipulator and applying a high-frequency voltage between the sample stage and the microelectrode. Plasma generation is facilitated.

  In this embodiment, an example of device analysis using actual local plasma processing and ion beam processing will be described.

FIG. 8 illustrates a processing procedure for device analysis. As an example of the apparatus to be used, the apparatus having the tip container of FIG. 4 in the configuration of FIG. (a) First, the gas supply source 109 is driven by the gas supply source control device 110 to move the tip container 402 over the region including the target position to be analyzed on the sample surface 202. Next, a gas source 114 having a gas for plasma processing is selected by the gas switching device 113, and a gas 407 for plasma processing is caused to flow to the tip container 402. Actually, the gas 407 is not visible because it is in the tip container 402, but for the sake of clarity, the gas inside is shown here. Here, a case where the layer to be removed from the sample surface 202 is SiO ₂ is taken as an example, and the gas is CF ₄ or the like as an example. Here, plasma is generated in the tip container 402 by applying a plasma potential to the electrode. This plasma removes the SiO _{2 on the} surface. Generally, time management is performed at the end of processing. That is, when the thickness of the film to be removed as a device is known, it can be estimated from the processing speed. In particular, when the material of the upper layer film and the lower layer film to be left are different, the upper layer can be accurately removed by using a gas that reacts only with the upper layer film for plasma processing. If the same material as the removal material of the upper layer is present in the lower layer, control the time and confirm the pattern of the lower layer by observing the SIM image by ion beam irradiation, or detect the sputtered lower layer material by analysis to the lower layer. You can confirm the arrival. When the upper layer removal processing is completed, the plasma voltage application is stopped, the gas supply is stopped, and the tip container 402 of the gas supply source 109 is retracted. (b) A lower layer pattern can be seen under the region 801 removed by plasma processing. Here, the pattern 802 is shown large for easy understanding in the figure, but in general, the size of the removed region is about several mm to 1 cm, and the pattern is often about submicron. . However, this pattern aggregate is about several hundred microns in size. In many cases, the analysis target position is designated by the number of the patterns counted from the end of the aggregate. For this reason, it is desired to process the pattern so that at least the end of the aggregate is exposed. The analysis target pattern 802 is identified by the pattern count by SIM image acquisition etc. about the exposed pattern in this way. It is also possible to align the target position by comparing the CAD data of the device and the SIM image. (c) Next, a mark 803 is marked on the region by sputtering using the ion beam 104 so that the identified pattern can be seen. (D) A deposition film is formed to protect the surface of the portion to be analyzed next. First, the gas supply source 109 is driven by the gas supply source control device 110 to move the tip container 402 over the region including the target position to be analyzed on the sample surface 202. Next, a gas source having a gas for ion beam assist deposition is selected by the gas switching device 113, and the ion beam assist deposition gas 804 is caused to flow to the tip container 402. The gas used here is, for example, W (CO) ₆ or the like. Here, the ion beam 104 is irradiated through the hole 403. In general, the processing time is managed by time depending on the film thickness to be formed. When the formation is completed, the irradiation of the ion beam 104 is stopped, the supply of the gas 804 is stopped, and the tip container 402 of the gas supply source 109 is retracted. (e) The protective film, in this case, the tungsten film 805 can be formed on the upper portion of the analysis portion by the above steps. (f) Finally, the ion beam 104 is used to sputter a hole 806 having a desired analysis position on one side to form a desired cross section 807, thereby enabling cross-sectional observation. In the simplest form, cross-sectional observation is possible by tilting the sample stage 102 and acquiring a SIM image by ion beam irradiation. In addition, SEM observation is possible if the apparatus has an electron beam optical system. Further, the sample can be taken out and analyzed with another SEM or the like. Furthermore, by performing material-dependent processing by plasma processing once again after forming the cross section, it becomes possible to form irregularities due to the cross-sectional structure, and to make the structure easier to see. Further, in the ion beam processing, a damaged layer is formed on the cross section, but the damaged layer can be reduced by performing plasma processing as shown in (a) on the cross section. This can be applied not only to cross-section processing but also to thin film processing for TEM. In particular, in the case of TEM sample processing, as described in the third embodiment, a sample removed by a probe or an extracted sample placed on a sample holder by a probe is inserted into the tip container 402 to perform damage removal processing by plasma. It is also possible to do. In this case, the tip container 402 does not need to face downward, and may be sideways.

  According to the present embodiment, it is possible to combine plasma processing and fine processing using an ion beam, thereby realizing device analysis in a short time.

In this embodiment, the configuration of a processing apparatus using a scanning electron microscope will be described.
FIG. 9 shows the configuration of an apparatus having a plasma processing function in a scanning electron microscope. This apparatus includes a movable sample stage 902 on which a sample substrate such as a semiconductor wafer 901 is placed, a sample position control apparatus 903 that controls the position of the sample stage 902 in order to specify the observation and processing position of the wafer 901, and the wafer 901. , An electron beam optical system 905 for irradiating the electron beam 904, and a secondary electron detector 906 for detecting secondary electrons from the wafer 901. The electron beam optical system 905 is controlled by an electron beam optical system controller 907, and the secondary electron detector 906 is controlled by a secondary electron detector controller 908. A gas supply source 109 that supplies a gas used for plasma processing, electron beam assisted etching, and electron beam assisted deposition is controlled by a gas supply source control device 910 for its position, heater temperature, valve opening / closing, and the like. The central processing unit 911 controls the electron beam optical system control unit 907, the secondary electron detector control unit 908, the gas supply source control unit 910, the sample position control unit 903, and the like. A sample stage 902, an electron beam optical system 905, a secondary electron detector 906, a gas supply source 909, etc. are arranged in a vacuum vessel 912. However, the sample need not be limited to a wafer, and may be a chip sample.

  Here, a processing / observation method using this apparatus will be described. That is, when there is an upper layer to be removed, a gas used for plasma is selected from the gas source 114 and supplied from the gas supply source 109 to the surface of the wafer 901. The tip structure of the gas supply source has a form as shown in FIG. 10, for example. That is, a hole 1002 for passing an electron beam through the tip container 1001 is vacant. FIG. 10B shows a cross-sectional structure. In this manner, the electron beam 904 is irradiated through the hole 1002 in a state where the gas is supplied into the tip container 1001. Here, the electron beam optical system control device 907 is set so that the electron beam current is larger than that in the case of normal scanning electron microscope observation. Thus, plasma is generated by colliding with gas particles at the position irradiated with the electron beam. The surface of the wafer 901 can be processed with the plasma thus generated. In this case, since the plasma is generated only in the region through which the electron beam passes, more local processing is possible. Further, by biasing the wafer with respect to the tip container 1001, acceleration of ions in the plasma can be controlled, and more flexible plasma processing can be realized. Thus, the lower layer device structure of the wafer from which the upper layer has been removed can be observed as a scanning electron microscope. If more precise observation is desired, the beam current can be reduced and observation can be performed with a more focused electron beam. Further, as described above, more local plasma processing can be realized by switching the irradiation conditions between the electron beam irradiation for turning the gas into plasma and the electron beam irradiation for observing the secondary electron image.

  According to the present embodiment, it becomes possible to combine local plasma processing limited to the electron beam irradiation region and analysis by scanning electron microscope observation, and device analysis in a short time can be realized.

  Since the present invention is effective for inspection and analysis of semiconductor processes, it can be used to improve yields at semiconductor manufacturers, and is considered to contribute greatly to cost reduction.

The figure which shows the structural example of the charged particle beam apparatus by this invention Detailed view of gas supply source tip The figure which shows the example of connection to the plasma power supply of a gas supply device Diagram showing confined tip container configuration The figure which shows the structure of the tip container for inductively coupled plasma which has a top coil The figure which shows the structure of the tip container for inductively coupled plasma which has a side coil The figure which shows the structural example of the charged particle beam apparatus of a plasma electrode manipulator drive type The figure which shows the example of device analysis by this invention The figure which shows the structural example of the processing apparatus using the scanning electron microscope by this invention Diagram showing details of gas supply source tip suitable for electron beam irradiation The figure which shows the structural example of the gas supply source provided with the gas cartridge

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 ... Wafer, 102 ... Sample stand, 103 ... Sample position control apparatus, 104 ... Ion beam, 105 ... Ion beam optical system, 106 ... Secondary electron detector, 107 ... Ion beam optical system control apparatus, 108 ... Secondary electron Detector control device 109 ... gas supply device 110 ... gas supply source control device 111 ... central processing device 112 ... vacuum vessel 113 ... gas switching device 114 ... gas source 115 ... power source 116 ... plasma voltage control Device: 117 ... Optical window 201 ... Tip, 202 ... Sample surface, 203 ... Gas, 204 ... Insulating structure, 205 ... Conductor 301 ... High frequency power supply, 302 ... Capacitor 401 ... Gas supply source, 402 ... Tip container, 403 ... Hole, 404 ... Conductor, 405 ... Side wall, 406 ... Hole, 407 ... Gas, 408 ... Electrode 501 ... Gas supply source, 502 ... Tip container, 503 ... 504 ... conductive wire, 505 ... hole, 506 ... gas, 507 ... hole 601 ... tip container, 602 ... coil 701 ... manipulator, 702 ... electrode, 703 ... manipulator control device, 704 ... power source, 705 ... plasma voltage control device, 706 ... Gas supply source 801 ... Area, 802 ... Pattern, 803 ... Mark, 804 ... Gas, 805 ... Tungsten film, 806 ... Hole, 807 ... Section 901 ... Wafer, 902 ... Sample stage, 903 ... Sample position control device, 904 ... Electron beam, 905 ... Electron beam optical system, 906 ... Secondary electron detector, 907 ... Electron beam optical system controller, 908 ... Secondary electron detector controller, 909 ... Gas supply device, 910 ... Gas supply source control 911 ... Central processing unit, 912 ... Vacuum container, 913 ... Gas switching device, 914 ... Gas source 1001 ... End container, 1002 ... hole 1101 ... gas cartridge, 1102 ... cartridge fixture, 1102 ... gas cartridge

Claims (14)

A sample stage on which the sample is placed;
A container for storing at least the sample stage, and a charged particle beam optical system for irradiating the sample with a charged particle beam,
A gas supply source for supplying gas to the surface of the sample;
A charged particle beam apparatus comprising: a power source capable of applying a voltage for converting the gas into plasma between the sample stage and the gas supply source. The charged particle beam apparatus according to claim 1,
The charged particle beam apparatus, wherein the power source applies a high-frequency voltage between the sample stage and the gas supply source. In the charged particle beam device according to claim 1 or 2,
The charged particle beam apparatus, wherein the gas supply source is connected to the power source via a capacitor. The charged particle beam apparatus according to claim 1,
The charged particle beam apparatus according to claim 1, wherein a distal end portion of a gas flow path in the gas supply source is disposed to face the surface of the sample. The charged particle beam device according to claim 4,
The charged particle beam apparatus according to claim 1, wherein the gas supply source includes an inner container having an opening on a surface of the tip portion facing the sample surface. In the charged particle beam device according to claim 5,
A charged particle beam apparatus characterized in that a cross-sectional shape of a surface of the inner container facing a sample surface is a rectangular shape. A movable sample stage on which the sample is placed;
A charged particle beam optical system for irradiating the sample with a charged particle beam;
A gas supply source for supplying gas to the surface of the sample having an inner container in which the front end of the gas flow channel faces the surface of the sample, and the opposed surface is an opening;
A power source for applying a high-frequency voltage to an induction coil formed outside the inner container;
A charged particle beam apparatus comprising: a vacuum vessel for storing the sample stage. In the charged particle beam device according to claim 1 or 6,
The gas supply source is capable of supplying a plurality of types of gas, and includes means for switching the type of gas to be supplied. In the charged particle beam device according to claim 1 or 6,
The charged particle beam apparatus according to claim 1, wherein the gas supply source is capable of supplying a charged particle assisted etching gas or a charged particle assisted deposition gas, and an etching gas for plasma. The charged particle beam apparatus according to claim 8,
A charged particle beam apparatus comprising gas type switching means for switching supply of the charged particle assisted etching gas or charged particle assisted deposition gas and the plasma etching gas. The charged particle beam apparatus according to claim 6,
The charged particle beam apparatus, wherein the gas supply source has a gas pressure switching function for switching a gas pressure at the time of applying the high-frequency voltage higher than a gas pressure at the time of charged particle beam irradiation. In the charged particle beam device according to any one of claims 1 to 10,
The charged particle beam apparatus is a focused ion beam or a projection ion beam. A sample stage on which the sample is placed; an electron beam optical system for irradiating the sample with an electron beam; a gas supply source for supplying a gas to the sample surface; and an electron beam irradiation and a secondary for converting the gas into plasma. A charged particle beam apparatus comprising: an electron beam optical system controller that switches irradiation conditions by electron beam irradiation for electron image observation; and a container that stores the sample stage. A sample stage on which the sample is placed;
A container having the sample stage therein;
A charged particle beam optical system for irradiating the sample with a charged particle beam;
Gas supply means for supplying gas to the sample surface;
A charged particle beam apparatus comprising: plasma generating means for converting the gas into plasma.

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