JP4067640B2 - Charged particle source, charged particle beam apparatus, defect analysis method, and semiconductor device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a charged particle source, a charged particle beam apparatus, a defect analysis method, and a semiconductor device manufacturing method for generating a charged particle beam for processing and observing a fine portion used for defect analysis in a semiconductor production line, for example.
[0002]
[Prior art]
In recent years, in the manufacture of semiconductor devices, it is necessary to proceed with new device development every two to three years, and how to increase the yield in the development period and quickly set up a mass production line has become an issue. And now that the degree of cleanliness of the line has advanced, it is said that most of the causes of lowering the yield are foreign matters related to the apparatus. For this reason, finding a foreign object at an early stage and feeding it back to the process is the key to suppressing defects.
Specifically, Japanese Patent Laid-Open No. 8-313460 discloses a scanning electron microscope apparatus (SEM = Scanning Electron Microscopy) + energy dispersive X-ray analysis of a process in which a foreign substance is generated after the foreign substance is found by inspection. There is a method of analyzing with a device (EDX = Energy Dispersive X-ray spectroscopy) or a focused ion beam device (FIB = Focused Ion Beam) + time-of-flight mass spectrometer (TOF-SIMS = Time-Of-Flight Secondary Ion Mass Spectroscopy). It is shown.
[0003]
In this FIB apparatus, a liquid metal ion source (LMIS = Liquitd Metal Ion Source) such as gallium has been widely used as a conventional ion source. In the FIB apparatus using this LMIS, since the ion source diameter is 0.1 μm or less, the beam can be easily focused to 0.1 μm or less by an ion optical system lens, so that it can be finely processed and observed with high accuracy. It has become.
[0004]
[Problems to be solved by the invention]
In the conventional FIB apparatus, LMIS is used as an ion source, a liquid metal is supplied to a pointed needle tip and an electric field is applied to ionize the metal and extract ions from the tip. Since the tip diameter of the liquid cone formed at the tip is 0.1 μm or less, it can be focused to 0.1 μm or less by the ion optical system. However, since a high electric field must be applied to the tip for ionization, it is difficult to continuously adjust the amount of ions to be extracted, that is, the ion beam current. Therefore, in the FIB apparatus using LMIS, the ion beam current is adjusted by changing the diameter of the beam limiting aperture incorporated in the ion optical system without adjusting the ion beam current by the ion source itself. In this case, it is necessary to provide a mechanism capable of exchanging several types of apertures having different diameters as required, and the beam current cannot be continuously changed. Further, when a large aperture is used to obtain a large beam current, the ion source diameter is effectively increased, so that the beam cannot be finely focused. In addition, there is a possibility that the aperture is always sputtered by the beam, or foreign matter may be generated due to the replacement of the aperture, making it difficult to identify the location where the foreign matter is generated.
From the above background, there has been a demand for an FIB apparatus capable of controlling the beam current without generating impurities and foreign matters.
[0005]
An object of the present invention is to provide a charged particle source and a charged particle beam apparatus that can continuously change a beam current without using an aperture and do not generate impurities and foreign matters.
Another object of the present invention is to improve the yield and quality of semiconductor devices and the like by reducing or eliminating the cause of defects at an early stage by enabling identification of the manufacturing process causing defects such as foreign matters. It is an object of the present invention to provide a failure analysis method and a semiconductor device manufacturing method.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a semi-coaxial resonator for resonating microwaves, and a plasma that is installed in a cavity portion facing the semi-coaxial portion of the semi-coaxial resonator and into which a gas to be converted into plasma is introduced. A chamber, a microwave power introduction window for introducing microwave power resonated by the semi-coaxial resonator into the plasma chamber, a high frequency antenna for introducing high frequency power into the plasma chamber, and plasma in the plasma chamber A charged particle source comprising an extraction electrode for extracting the charged particles. That is, the present invention is a stepless process by changing the direct current or alternating current power that turns a gas into a plasma in a plasma charged particle source that turns a gas into a plasma and extracts ions or electrons in the plasma to make a charged particle source. The beam current can be adjusted. In a plasma charged particle source, the density of the plasma is proportional to the ion or electron beam current, and increasing the power supplies power to the plasma to increase the plasma density, resulting in an ion beam current or electron beam. The current will increase.
[0007]
In the charged particle source according to the present invention, the high-frequency antenna is provided in a semi-coaxial portion so as to face the plasma chamber.
In addition, the present invention is characterized in that the charged particle source includes high-frequency power control means for controlling high-frequency power supplied to the high-frequency antenna.
[0008]
In the charged particle source, the present invention may further include an electromagnetic wave propagating in the plasma chamber so that an electromagnetic wave can propagate to an electron cyclotron resonance ECR (Electron Cyclotron Resonance) point. A cusp magnetic field generating means for forming a cusp magnetic field is provided.
[0009]
In the charged particle source, the present invention further includes a magnetic force line generating means for generating a magnetic force line that allows high-frequency electromagnetic waves generated by the high-frequency antenna to propagate through the plasma that has been converted into plasma in the plasma chamber. It is characterized by that.
[0010]
According to the present invention, in the semi-coaxial resonator in the charged particle source, the semi-coaxial portion is configured to be movable in the axial direction.
Further, the present invention is characterized in that the semi-coaxial resonator in the charged particle source includes a matching unit for adjusting a resonance state of a microwave in the resonator.
Moreover, the present invention is characterized in that, in the charged particle source, the gas introduced into the plasma chamber is any one of an inert gas and a nitrogen gas.
[0011]
In addition, the present invention provides a semi-coaxial resonator for resonating microwaves, a plasma chamber in which a gas to be converted into plasma is introduced, and a plasma chamber that is installed in a hollow portion facing the semi-coaxial portion of the semi-coaxial resonator. A microwave power introduction window for introducing microwave power resonated by the semi-coaxial resonator, a high frequency antenna for introducing high frequency power into the plasma chamber, and an extraction electrode for extracting charged particles plasmatized in the plasma chamber; A charged particle source including: an optical system that irradiates an object by focusing and deflecting a charged particle beam extracted from an extraction electrode of the charged particle source; and detecting secondary charged particles generated from the object A charged particle beam device comprising a secondary charged particle detector.
According to the present invention, in the charged particle source in the charged particle beam apparatus, the high-frequency antenna is provided in a semi-coaxial portion so as to face the plasma chamber.
According to the present invention, the charged particle source in the charged particle beam apparatus includes high frequency power control means for controlling high frequency power supplied to the high frequency antenna.
[0012]
In the charged particle beam apparatus of the charged particle beam apparatus, the present invention further provides a cusp magnetic field around the inside of the plasma chamber so that electromagnetic waves can propagate to the ECR point in the plasma converted into plasma in the plasma chamber. A cusp magnetic field generating means is provided.
According to the present invention, in the charged particle source in the charged particle beam apparatus, a magnetic field line is further generated so that a high frequency electromagnetic wave generated by the high frequency antenna can propagate through the plasma converted into plasma in the plasma chamber. The magnetic field line generating means is provided.
Further, the present invention is characterized in that, in the charged particle source in the charged particle beam apparatus, the gas introduced into the plasma chamber is any one of an inert gas and a nitrogen gas.
In the charged particle beam apparatus, the present invention further provides a power supply voltage supplied to the extraction electrode of the charged particle source and the optical system so as to switch and irradiate an object with an ion beam and an electron beam. Control means for switching and controlling is provided.
Further, the present invention is characterized in that in the charged particle beam device, there is provided analysis means for performing elemental analysis of a substance formed on a target object by secondary charged particles detected by the secondary charged particle detector. To do.
[0013]
The present invention also provides an inspection process for inspecting defects such as foreign matter generated on a substrate processed in a semiconductor manufacturing line, a semi-coaxial resonator for resonating microwaves, and a semi-coaxial portion of the semi-coaxial resonator. A plasma chamber in which a gas to be converted into plasma is introduced, a microwave power introduction window for introducing microwave power resonated by the semi-coaxial resonator into the plasma chamber, and a high frequency in the plasma chamber A charged particle beam such as an ion beam or an electron beam extracted from a charged particle source having a high-frequency antenna for introducing electric power and an extraction electrode for extracting charged particles plasmad in the plasma chamber is focused by an optical system. Irradiate defects on the substrate inspected in the inspection process, and charged particles or X-rays generated from the defects Defect element analysis step of detecting light with a detector and performing defect elemental analysis, and specifying step of identifying a defect manufacturing process of the semiconductor production line based on the defect element analyzed in the defect elemental analysis step And a failure analysis method characterized by comprising:
The present invention also provides an inspection process for inspecting defects such as foreign matter generated on a substrate processed in a semiconductor manufacturing line, a semi-coaxial resonator for resonating microwaves, and a semi-coaxial portion of the semi-coaxial resonator. A plasma chamber in which a gas to be converted into plasma is introduced, a microwave power introduction window for introducing microwave power resonated by the semi-coaxial resonator into the plasma chamber, and a high frequency in the plasma chamber A charged particle beam such as an ion beam extracted from a charged particle source having a high-frequency antenna for introducing electric power and an extraction electrode for extracting charged particles plasmad in the plasma chamber is focused by an optical system (and further deflected). The defect exposure step of irradiating the defect area on the substrate inspected in the inspection step to expose the defect A defect element analysis step for performing element analysis on the defect exposed in the defect exposure step, and a specification for identifying a defect manufacturing step of the semiconductor manufacturing line based on the element of the defect analyzed in the element analysis step of the defect A failure analysis method characterized by comprising a process.
[0014]
In addition, the present invention provides a method for manufacturing a semiconductor device in which a semiconductor device is manufactured by processing a substrate on a semiconductor manufacturing line, and an inspection for inspecting defects such as foreign matters generated on the substrate processed in the semiconductor manufacturing line. A plasma chamber in which a gas to be converted into plasma is introduced, and a semi-coaxial resonator for resonating microwaves, a semi-coaxial resonator disposed in a cavity facing the semi-coaxial portion of the semi-coaxial resonator, and the semi-coaxial in the plasma chamber A microwave power introduction window for introducing microwave power resonated by a resonator, a high frequency antenna for introducing high frequency power into the plasma chamber, and an extraction electrode for extracting charged particles plasmatized in the plasma chamber A charged particle beam such as an ion beam or electron beam extracted from a charged particle source is transmitted by an optical system. Irradiating a defect on the substrate inspected in the inspection step by bundling, and detecting a charged particle or X-ray or light generated from the defect with a detector to perform an elemental analysis of the defect; and The defect manufacturing process of the semiconductor manufacturing line is specified based on the defect element analyzed in the defect element analysis process, and the factor causing the defect is reduced or eliminated by feeding back to the specified defect manufacturing process. And a control process for controlling the semiconductor device.
[0015]
In addition, the present invention provides a method for manufacturing a semiconductor device in which a semiconductor device is manufactured by processing a substrate on a semiconductor manufacturing line, and an inspection for inspecting defects such as foreign matters generated on the substrate processed in the semiconductor manufacturing line. A plasma chamber in which a gas to be converted into plasma is introduced, and a semi-coaxial resonator for resonating microwaves, a semi-coaxial resonator disposed in a cavity facing the semi-coaxial portion of the semi-coaxial resonator, and the semi-coaxial in the plasma chamber A microwave power introduction window for introducing microwave power resonated by a resonator, a high frequency antenna for introducing high frequency power into the plasma chamber, and an extraction electrode for extracting charged particles plasmatized in the plasma chamber A charged particle beam such as an ion beam extracted from a charged particle source is focused by an optical system (and further polarized). Irradiating a defect region on the substrate inspected in the inspection step to expose the defect, and a defect element for performing elemental analysis on the defect exposed in the defect exposure step The defect manufacturing process of the semiconductor manufacturing line is identified based on the analysis element and the defect element analyzed in the element analysis process of the defect, and the factor causing the defect is reduced by feeding back to the identified defect manufacturing process. Or a control process for controlling to remove the semiconductor device.
[0016]
As described above, according to the above-described configuration, the gas sealed in the plasma chamber installed inside the resonator is converted into plasma by resonating the microwave with a semi-coaxial resonator having no cutoff frequency depending on the size of the resonator. By doing so, a high density plasma is generated locally, and an ion beam current over a wide range of several pA to several nA can be obtained. Or rough machining of a wide area at high speed.
If the ion beam current in a wide range is to be changed only by the microwave power, a microwave power source that can be stably and continuously changed from several tens of W to several thousand W is required. However, the maximum passing power of a realistic coaxial line is 200 to 300 W, and it is impossible to supply more power. Therefore, in the present invention, in addition to the microwave power, high-frequency power having a frequency lower than the microwave frequency of several hundreds k to several hundred MHz is simultaneously applied from the high-frequency antenna to the plasma in the plasma chamber to thereby increase the plasma density. The ion beam current required for FIB processing can be obtained by a 200 to 300 W microwave power source + high frequency power source.
[0017]
Therefore, by simultaneously supplying high-frequency power to the plasma in addition to the microwave, it is possible to control the beam current that has the same performance as the conventional beam current control using the aperture and does not emit impurities or foreign matters. . The ions from the conventional LMIS are metal ions, but in the case of a plasma ion source, a gas is used. Therefore, if a gas species that does not become an impurity to the semiconductor is selected, the ions themselves become a contamination source. The fact that this is not the case is disclosed in Japanese Patent Application Laid-Open No. 7-320670.
[0018]
As described above, according to the present invention, a beam current can be continuously changed without using an aperture, and a charged particle source and a charged particle beam apparatus that do not generate impurities and foreign matters can be realized. Analysis and processing can be performed with the current, that is, the beam diameter.
In addition, according to the present invention, it is possible to perform analysis and processing with an optimum beam current, that is, a beam diameter, using a charged particle beam that does not generate impurities and foreign matters. It is possible to improve the yield and quality of semiconductor devices and the like by accurately identifying the manufacturing process in which a defect such as a foreign substance is generated and reducing or eliminating the cause of the defect at an early stage.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments according to the present invention will be described with reference to the drawings.
First, a first embodiment of a plasma charged particle source according to the present invention will be described with reference to FIGS. 1 to 7, 12, and 14. In the following description, a plasma ion source will be described. Naturally, the plasma charged particle source can be used as a plasma electron beam source as well as a plasma ion source as will be described later.
FIG. 1 is a cross-sectional view schematically showing an essential part of a first embodiment of an ion source in which a gas is converted into plasma by a semi-coaxial resonator and a slit according to the present invention. 1 in FIG. 1 is a semi-coaxial resonator formed of a material such as aluminum. Reference numeral 2 denotes a microwave introducing coaxial connector including an antenna 2 a for introducing a microwave into the semi-coaxial resonator 1. Reference numeral 3 denotes a movable center conductor forming a semi-coaxial portion. Reference numeral 4 denotes a high-frequency power introduction high-frequency antenna for supplying high-frequency power, which is lower than a microwave frequency such as several hundred k to several hundred MHz, into the plasma chamber 8 and is installed in the movable central conductor 3 which is a semi-coaxial part. ing. A high frequency coaxial cable 5 supplies high frequency power to the high frequency antenna 4. Reference numeral 6 denotes a movable stub matching device composed of a sleeving tuner or the like, which is adjusted to obtain an optimum microwave resonance state in the semi-coaxial resonator 1. Reference numeral 8 denotes a plasma chamber made of quartz, ceramic, or the like, and is installed in a hollow portion facing the semi-coaxial portion of the semi-coaxial resonator 1. That is, a gas to be converted into plasma is introduced from the gas flow path 11 into the plasma chamber 8. Reference numeral 9 denotes a magnet for generating a magnetic field around the inside of the plasma chamber 8 for preventing attenuation of microwave power introduced into the plasma chamber 8. Reference numeral 13 denotes an extraction electrode for extracting ions 23 or electrons 22 that are converted into plasma into the plasma chamber 8. Reference numeral 14 denotes an ion beam (FIB) extracted from the extraction electrode 13. Reference numeral 16 denotes a gas introduction pipe for introducing a gas to be converted into plasma into the plasma chamber 8 from the gas flow path 11. A high-frequency power control device (not shown) that supplies the high-frequency antenna 4 with high-frequency power changed to about 0 to 100 W is connected to the high-frequency coaxial cable 5. Reference numeral 10 denotes a linear shaft that guides the movable central conductor 3 up and down. Reference numeral 15 denotes a high voltage application terminal for applying a high voltage to the sli tab tuner 6.
[0020]
The gas introduced from the gas introduction pipe 16 flows into the plasma chamber 8 through the gas flow path 11 provided in the plasma chamber 8. This gas is turned into plasma by the microwave introduced through the microwave introduction window (slit) 30, and ions are extracted through a hole opened in the extraction electrode 13 to be an ion source. The extracted ions are focused by the optical system 101 shown in FIG. 14 and irradiated onto the object 102 to be processed or analyzed. The introduced gas is composed of an inert gas such as neon, krypton, argon, or Zenon, or a nitrogen gas.
By the way, since microwaves, which are electromagnetic waves, travel through space, a three-dimensional circuit must be used unlike a normal electric circuit. Also in this plasma ion source, the microwave is propagated from the antenna 2a of the coaxial cable 2 to the semi-coaxial resonator 1 which is a three-dimensional circuit, and the microwave is resonated in the resonator 1 to generate power of about 200 to 300 W in the plasma chamber. 8 is supplied to the plasma through the microwave introduction window 30. As shown in FIG. 2, there are two types of coaxial cavity resonators, a coaxial resonator and a semi-coaxial resonator, depending on the resonance wavelength. In the present invention, the plasma chamber 8 in FIG. 1 is installed in the resonator. In order to do so, it becomes the form of a semi-coaxial resonator. The resonance length of the semi-coaxial resonator 1 is 3/4 wavelength, which is longer than the coaxial resonator by 1/4 wavelength. The characteristic impedance of the coaxial resonator is determined by the ratio of a and b in the figure. For example, since the wavelength of the microwave of 2.45 GHz is 122 mm, the semi-coaxial resonator 1 has a resonator length of about 91 mm.
[0021]
Now, gas is flowed into the plasma chamber 8. Next, when a microwave is introduced from the antenna 2 a into the semi-coaxial resonator 1, a microwave resonance state occurs inside the semi-coaxial resonator 1. Since the microwave does not propagate inside the plasma chamber 8 as it is, the movable central conductor 3 is pulled up to expose the plasma chamber 8 inside the resonator 1 as shown in FIG. As a result, the microwave electric field propagates to the gas inside the plasma chamber 8 through a gap (microwave introduction window), that is, a slit (microwave introduction window) 30 between the bottom of the resonator 1 and the movable central conductor 3. Since the microwave resonance state is shifted by pulling up the movable center conductor 3, the microwave electric field is efficiently propagated to the gas in the plasma chamber 8 by adjusting the position of the movable center conductor 3 in the vertical direction to the resonance position. Gas atoms or molecules are ionized to form plasma 7. Since the resonance state of the microwave is shifted again by the ignition of the plasma 7, the position of the movable central conductor 3 or the position of the three rods of the three stub tuner 6, which is a kind of the movable stub matching device (inside the resonator) The resonance state is optimized by adjusting the amount to be supplied to the plasma 7 and the microwave power is efficiently supplied to the plasma 7.
[0022]
By the way, there is a need for defect analysis in which, for example, a defect such as a foreign matter generated on a wafer in a semiconductor manufacturing line is subjected to elemental analysis or the like to find out the cause of the defect. Therefore, for example, in FIB processing, high-precision fine processing and a wide range of high-speed rough processing are required, and the ion beam current can be continuously changed over a wide range of several pA to several nA, that is, any ion There has been a demand for a plasma ion source capable of obtaining a beam current.
Therefore, if the microwave power is increased to increase the ion beam current, the plasma density increases, but as the density increases, the upper limit (cutoff frequency) of the electromagnetic wave that can propagate inside the plasma changes in proportion to the density. To do. For this reason, in the present invention, a magnet 9 that generates, for example, an octupole cusp magnetic field as shown in FIG. 4A along the wall in the plasma chamber 8 is arranged at the position shown in FIG. Reference numeral 18 denotes a yoke. As shown in FIG. 4B, the cusp magnetic field utilizes the fact that an electromagnetic wave can propagate in the plasma to the electron cyclotron resonance ECR (Electron Cyclotron Resonance) point along the magnetic field line regardless of the cutoff frequency. Thereby, the supply limit of the microwave power is determined by the capacity of the microwave power supply system.
[0023]
However, as described above, if the current range of FIB (a wide range of several pA to several nA) is controlled only by the microwave power supply, a large capacity power supply is required, which is not practical. Therefore, in the present invention, high-frequency power is supplied to the high-frequency antenna 4 provided inside the movable central conductor 3 through the high-frequency cable 5 so that a high beam current can be obtained even when the microwave power is low. FIG. 5 shows changes in the ion beam current when a constant microwave power (72 W in FIG. 5) is supplied and a high frequency power is applied. It can be seen that in the case of microwave + high frequency power, the ion beam current greatly increases as the high frequency power increases, compared to the case of only microwave power (when the high frequency power is 0 W). On the other hand, as a result of measuring the energy width of the ion beam by the retarding method, it can be seen that the energy width increases when a high frequency is applied.
Therefore, according to the present embodiment, as shown in FIG. 6, in the conventional beam current control method using an aperture, the beam width increases as the current increases, and the energy width increases as the beam current increases. As a result, the beam diameter increases. However, in the conventional beam current control method using the aperture, since the beam always hits the aperture, there is a possibility that impurities may be generated by sputtering, and foreign matter may be generated due to the movement of the aperture. Therefore, there is no problem, and there is an advantage that the beam current can be continuously controlled as the high frequency power increases.
[0024]
The FIB apparatus provided with the plasma charged particle source described above is configured as shown in FIG. That is, 103 is the plasma charged particle source shown in FIGS. The ions 23 converted into plasma in the plasma chamber 8 are extracted by the power supply voltage 31 a applied to the extraction electrode 13 with respect to the reference electrode 24 and applied between the extraction electrode 13 and the condenser lens 25. It is accelerated by the power supply voltage 32a. By the way, by making the ion extraction port of the extraction electrode 13 smaller in diameter than the thickness of the ion sheath, plasma does not diffuse from the extraction port to the acceleration electrode side. Since it is only necessary to apply a relatively small voltage 31a for extracting the electrode 23, it is possible to prevent the extraction electrode 13 from being sputtered and generating foreign matter. That is, apertureless can be realized. That is, by applying a voltage 31a to the extraction electrode 13 with respect to the reference electrode 24 installed in the plasma 7, an electric field is efficiently applied to the plasma 7, and the maximum number of ions 23 are extracted at a low voltage of about several tens of volts. Therefore, dielectric breakdown does not occur in the vicinity of the extraction electrode 13.
[0025]
The optical system 101 includes the condenser lens 25, the deflection electrode 26, and the object lens 27. Reference numerals 33 a, 34 a, and 35 a denote power supply voltages applied to the condenser lens 25 and the object lens 27. These power supply voltages 31a, 32a, 33a, 34a, and 35a are configured to be controllable so that an optimum voltage is given by a control device (not shown). The sample stage 28 on which the optical system 101 and the object 102 are placed is installed in a vacuum chamber (not shown) to be evacuated.
Therefore, by controlling the high-frequency power to the high-frequency antenna 4 provided inside the movable center conductor 3 by a control device (not shown), the ion beam 14 is irradiated with the beam current optimized in a wide range of several pA to several nA. As a result, the beam diameter can be optimized because the energy width increases as the beam current increases. As described above, the ion beam 14 having the beam current and the beam diameter optimized for the high-precision fine processing or the wide-range high-speed rough processing to be processed or analyzed on the object 102 is placed on the sample stage 28. The object (for example, semiconductor wafer 21) 102 placed can be irradiated. Reference numeral 104 denotes a secondary charged particle detector that detects secondary charged particles (secondary ions and secondary electrons) generated from the object 102. The irradiation position of the ion beam 14 with respect to the object 102 can be determined by the secondary charged particle detection signal detected from the secondary charged particle detector 104.
[0026]
Next, an application example in which the above-described FIB apparatus is applied to a semiconductor production line will be described.
For example, in the example in which the FIB apparatus capable of continuously controlling the beam current without generating impurities and foreign matters is used for failure analysis of a semiconductor production line composed of process a, process b, process c,. As shown in FIG. 7, it is discovered by a foreign matter inspection or an appearance inspection apparatus (comprising inspection A, inspection B, inspection C, etc.) inspected on the wafers obtained from the steps a, b and c in the production line. Based on the position data 72 obtained from the database 71 related to the defect 20 such as the foreign matter, the FIB 14 is irradiated in the FIB apparatus, and the secondary charged particle image obtained from the foreign matter 20 detected by the secondary charged particle detector 104 is obtained. Based on this, the shape of the foreign material 20 is observed. Note that the shape of the foreign material 20 may be observed with a scanning electron microscope (SEM). In the step 73 using the FIB apparatus, when the foreign matter 20 adheres to the semiconductor wafer surface 21, a thin oxide film is formed on the outermost surface layer by transporting the wafer in the atmosphere or the like. Is removed and processed by the FIB 14 having a large beam diameter, and then the beam current is reduced (1 μm to 0 μm) to match the size of the foreign matter (about 2 μm to 0.05 μm). The secondary ions sputtered from the surface to about 0.01 μm are subjected to TOF-SIMS analysis 19 to perform elemental analysis of the foreign matter, and the elemental analysis results are registered in the database 71.
[0027]
The defect analysis apparatus specifies the substance generated in which process from the elemental analysis result of the foreign matter registered in the database 71, and applies feedback to the production line as soon as possible to improve the defect. That is, the defect analysis apparatus can grasp the element of the foreign substance from the elemental analysis result of the foreign substance, and as a result, can determine which process the foreign substance has occurred and can identify the process. .
In step 73 using the FIB apparatus, if the foreign matter is present on the lower layer rather than on the surface, the beam current is increased and the cross-section is processed from the upper layer of the foreign matter with the FIB 14 having a large beam diameter. If the TOF-SIMS analysis 19 is carried out by reducing the beam current so that it fits the size of about 2 μm to 0.05 μm and making the beam diameter about 1 μm to 0.01 μm, the defect analysis apparatus similarly A foreign matter generation process can be specified. That is, when the thin oxide film formed on the surface layer of the foreign material 20 is removed or when the cross-section is processed from the upper layer of the foreign material when the foreign material is present on the lower layer, the beam current is increased. It is possible to execute at high speed by significantly increasing the beam diameter (about 1 μm to several tens of μm). In analyzing foreign matter, instead of the conventional gallium ion, it is a gas ion from an ion source using plasma (ion based on an inert gas such as neon, krypton, argon, Zenon, or nitrogen). In addition, since current control is performed without using an aperture, it is also characterized in that element analysis and a defective process can be identified with high accuracy without contaminating the wafer with impurities.
[0028]
Next, a second embodiment of the plasma ion source according to the present invention will be described with reference to FIGS. 5, 6, 8, 9, 12, and 14.
FIG. 8 is a cross-sectional view schematically showing a main part of a second embodiment of an ion source in which a gas is converted into plasma by a semi-coaxial resonator and a slit according to the present invention. The second embodiment is different from the first embodiment in that inert gases such as neon, krypton, argon, and Zenon in the plasma chamber 8 are microwaved using the semi-coaxial resonator 1 and the slit 30. In a plasma ion source that converts either gas or nitrogen gas into plasma and extracts ions from a hole opened in the extraction electrode 13, a magnetic field is generated in the vertical direction above the high-frequency power introduction high-frequency antenna 4 that controls the ion beam current. A magnet 17 is installed. A high-frequency electromagnetic wave generated from the high-frequency antenna 4 by the magnetic lines of the magnet 17 propagates into the plasma in the whistler mode, thereby increasing the supply efficiency of the high-frequency power. The Whistler mode is a mode when an electromagnetic wave propagates in plasma. Thus, by installing the magnet 17, it becomes possible to increase the supply efficiency of the high-frequency power by the high-frequency power introduction high-frequency antenna 4, and the beam current (pA) and the energy width ( eV) can be increased. Therefore, as shown in FIG. 6, the beam current (pA) can be continuously changed, and as a result, the beam diameter can be continuously changed as the energy width (eV) increases, It is possible to realize optimal processing, analysis processing, etc. to 102 (21).
[0029]
Next, an application example in which the above-described FIB apparatus is applied to a semiconductor production line will be described.
For example, using an FIB apparatus capable of continuously controlling the beam current without generating the impurities and foreign matters, if used for failure analysis of a semiconductor production line consisting of step a, step b, step c,. As shown in FIG. 9, in step 74, a scanning type is used to detect foreign matter found by foreign matter inspection and appearance inspection devices (inspection A, inspection B, inspection C, etc.) in the production line based on position data 72 in database 71. The shape is observed with an electron microscope (SEM). If a foreign substance adheres to the surface layer, a thin oxide film is formed on the outermost surface layer by, for example, transporting the wafer in the atmosphere. Therefore, in step 75 using the FIB apparatus, the FIB 14 is irradiated and the secondary layer is irradiated. Positioning based on the secondary charged particle image obtained from the foreign matter detected by the charged particle detector 104, the beam current is increased to the thin oxide film adhering to the surface layer of the foreign matter and the FIB 14 having a large beam diameter is irradiated. Then, removal processing is performed. Thereafter, in step 76 using the FIB apparatus, the beam current is reduced so as to match the size of the foreign matter (about 2 μm to 0.05 μm), the beam diameter is set to about (1 μm to 0.01 μm), and Auger electron spectroscopy of the cross section is performed. By performing (AES = Auger Electron Spectroscopy) analysis, elemental analysis of the foreign matter is performed, and the result is registered as the database 71.
[0030]
The defect analysis device identifies the process material from the elemental analysis result of the foreign matter registered as the database 71, and applies feedback to improve the defect as soon as possible. Further, when the foreign matter is not on the surface but is present below the surface, the beam current is increased and the cross-section is processed from the upper layer of the foreign matter by the FIB 14 having a large beam diameter, and then the foreign matter (for example, 2 μm to 0 μm). If the AES analysis is performed by reducing the beam current so as to fit the size of about .05 μm and making the beam diameter (about 1 μm to 0.01 μm), the defect analysis apparatus similarly identifies the foreign matter generation process. be able to. It should be noted that, when performing cross-section processing of foreign matter, it is a gas ion from an ion source using plasma instead of the conventional gallium ion, and current control without using an aperture, so the wafer is not contaminated with impurities, and accuracy is ensured. It is also characterized by good elemental analysis and identification of defective processes.
[0031]
Next, a third embodiment of the plasma ion source according to the present invention will be described with reference to FIGS. 5, 6, 8, 9, 12, and 14.
FIG. 10 is a cross-sectional view schematically showing a main part of a third embodiment of an ion source in which a gas is converted into plasma by a semi-coaxial resonator and a slit according to the present invention. The third embodiment is different from the first embodiment in that inert ions such as neon, krypton, argon, and Zenon in the plasma chamber 8 are microwaved by using the semi-coaxial resonator 1 and the slit 30. In the plasma ion source that converts either gas or nitrogen gas into plasma and extracts ions from the hole opened in the extraction electrode 13, the magnet 9 that generates the cusp magnetic field is removed, and the ion beam current is controlled above the high frequency antenna 4. A magnet 17 that generates a magnetic field only in the vertical direction is installed. By removing the magnet 9, the disturbance of the vertical magnetic field lines of the magnet 17 is reduced and the supply efficiency of the high-frequency electromagnetic wave to the Whistler mode plasma is increased.
[0032]
Next, an application example in which the above-described FIB apparatus is applied to a semiconductor production line will be described.
For example, using an FIB apparatus capable of continuously controlling the beam current without generating the impurities and foreign matters, if used for failure analysis of a semiconductor production line consisting of step a, step b, step c,. As shown in FIG. 11, in step 74, the scanning type electronic device detects foreign matter found by foreign matter inspection or appearance inspection equipment (inspection A, inspection B, inspection C, etc.) in the production line based on position data 72 in database 71. The shape is observed with a microscope. If foreign matter adheres to the surface layer of the semiconductor wafer, a thin oxide film is formed on the outermost surface layer by, for example, transporting the wafer in the atmosphere. Therefore, the FIB 14 is irradiated in step 75 using the FIB apparatus. Positioning is performed based on the secondary charged particle image obtained from the foreign matter detected by the secondary charged particle detector 104, and the beam current is increased by increasing the beam current in the thin oxide film adhering to the surface layer of the foreign matter. Removal processing is performed by irradiating the FIB 14. Thereafter, in step 77 using the FIB apparatus, the beam current is reduced so as to match the size of the foreign matter (for example, about 2 μm to 0.05 μm) to reduce the beam diameter to about 1 μm to 0.01 μm, The elemental analysis of the foreign matter is performed by performing the EDX analysis, and the result is registered as the database 71.
[0033]
The defect analysis device identifies the process material from the elemental analysis result of the foreign matter registered as the database 71, and applies feedback to improve the defect as soon as possible. Further, when the foreign matter exists in the lower layer than the surface, the beam current is increased and the cross section is processed from the upper layer of the foreign matter with the FIB 14 having a large beam diameter, and then the foreign matter (for example, about 2 μm to 0.05 μm). If the EDX analysis is performed by reducing the beam current so as to match the size of the beam and setting the beam diameter to about (1 μm to 0.01 μm), the defect generation process can be similarly identified in the defect analysis apparatus. It should be noted that, when performing cross-section processing of foreign matter, it is a gas ion from an ion source using plasma instead of the conventional gallium ion, and current control without using an aperture, so the wafer is not contaminated with impurities, and accuracy is ensured. It is also characterized by good elemental analysis and identification of defective processes.
[0034]
After the position of the foreign matter is specified by the inspection devices A, B, and C as described above, the shape of the foreign matter is confirmed by the SEM or FIB device, the beam current is increased, and the cross section of the foreign matter is checked by the FIB 14 having a large beam diameter. After processing, TOF-SIMS, AES, EDX analysis is performed by reducing the beam current to fit the size of the foreign material (for example, about 2 μm to 0.05 μm) and reducing the beam diameter to about 1 μm to 0.01 μm. By performing elemental analysis of foreign matter using a surface analysis method such as the above and registering the elemental analysis result of foreign matter in the database 71, it is possible to identify in which process of the semiconductor manufacturing line the foreign matter has occurred in the defect analysis apparatus Analysis can be performed. Note that a failure analysis apparatus that identifies a failure process can be configured by connecting to an analysis apparatus (including an FIB processing apparatus) and inspection apparatuses A, B, and C via a network. Further, the failure analysis apparatus can be installed in an analysis apparatus (including an FIB processing apparatus).
Further, the SEM or FIB apparatus for confirming the shape of a foreign substance or the like can be configured by the same apparatus as the analysis apparatus, as will be described later.
[0035]
Next, an embodiment of an SEM apparatus using the plasma charged particle source according to the present invention will be described.
In the first to third embodiments, since the voltage to the extraction electrode 13 is set to a negative potential with respect to the plasma potential as the plasma charged particle source, the positive ions 23 in the plasma 7 are extracted. Operated as FIB14.
[0036]
On the other hand, in the plasma 7, there are electrons 22 generated as a result of ionization of a gas composed of an inert gas such as neon, krypton, argon, or Zenon, or a nitrogen gas. Accordingly, when the voltage to the extraction electrode 13 given by the power supply voltage 31b is set to a positive potential with respect to the plasma potential given by the reference electrode 24, the electrons 22 can be extracted and operate as an electron source. By the way, in Auger spectroscopic analysis and EDX analysis that have been used to analyze foreign substances, a lens barrel for generating a focused electron beam such as SEM is required as a primary beam for irradiating the analysis surface. According to the present invention, as shown in FIGS. 12A and 12B, the polarity of the voltage to the extraction electrode 13 of the plasma charged particle source, the condenser lens 25 of the ion optical system 101, the object lens 27, the deflection control system. The function of the FIB in which the FIB 14 is applied to the object 102 (21) is changed to the function of the SEM in which the electron beam 29 is applied to the object 102 (21) simply by changing the polarity of the voltage 26. Is no longer necessary. That is, the electrons 22 plasmified in the plasma chamber 8 of the plasma charged particle source 103 configured as shown in FIG. 1 and FIG. 3 or FIG. 8 or FIG. 10 are applied to the extraction electrode 13 with respect to the reference electrode 24. It is extracted by the power supply voltage 31 b and accelerated by the power supply voltage 32 b applied between the extraction electrode 13 and the condenser lens 25. By the way, by making the electron extraction port of the extraction electrode 13 smaller in diameter than the thickness of the electron sheath, the plasma does not diffuse from the extraction port to the acceleration electrode side. It is only necessary to apply a relatively small voltage 31b for extracting 22. That is, by applying a voltage 31b to the extraction electrode 13 with respect to the reference electrode 24 installed in the plasma 7, an electric field is efficiently applied to the plasma 7, and the maximum number of electrons 22 is extracted at a low voltage of about several tens of volts. Therefore, dielectric breakdown does not occur in the vicinity of the extraction electrode 13. Reference numerals 33b, 34b, and 35b denote power supply voltages applied to the condenser lens 25 and the object lens 27. The power supply voltages 31b, 32b, 33b, 34b, and 35b are configured to be controllable so that an optimum voltage is given by a control device (not shown).
The control device can also switch between the power supply voltage 31a and the power supply voltage 31b, the power supply voltage 32a and the power supply voltage 32b, the power supply voltage 33a and the power supply voltage 33b, the power supply voltage 34a and the power supply voltage 34b, and the power supply voltage 35a and the power supply voltage 35b. It is configured.
[0037]
Next, an application example of the FIB apparatus according to the present invention to a semiconductor production line will be described.
For example, as shown in FIG. 13, it was discovered by a foreign substance inspection or appearance inspection apparatus (inspection A, inspection B, inspection C, etc.) in a semiconductor manufacturing line consisting of step a, step b, step c,. In step 78, using the FIB apparatus based on the position data 72 of the database 71, the voltage 31b to the extraction electrode 13 is positive with respect to the plasma potential, and the voltage of the ion optical system 101 is used to focus the electrons. As an SEM for irradiating the object 102 (21) to which the foreign matter is attached with the electron beam 29 and detecting secondary electrons generated from the object 102 (21) by the charged particle detector 104. The function is performed, and the shape of the foreign matter is observed based on the detected secondary electron image.
If a foreign substance adheres to the surface, a thin oxide film is formed on the outermost surface layer by, for example, transporting the wafer in the atmosphere. Therefore, in step 79 using the FIB apparatus, the voltage to the extraction electrode 13 is Is negative with respect to the plasma potential, the voltage of the ion optical system 101 is switched to a voltage for focusing ions, the beam current is increased, and the FIB 14 having a large beam diameter is irradiated and removed by the FIB function.
[0038]
Then, in step 80 using the FIB apparatus, the extraction voltage and the voltage of the ion optical system 101 are switched again, the beam current is further reduced, the beam diameter is made smaller than that of the foreign matter, and the electron beam 29 is scanned in the cross section from the surface. The elemental analysis of the foreign matter is performed by performing the energy analysis (EDX) of Auger electrons or X-rays to be released, and the elemental analysis result of the foreign matter is registered in the database 71. If the analysis uses an electron beam as the primary beam, the analysis can be performed by methods other than Auger spectroscopic analysis and EDX analysis. Then, in the failure analysis apparatus, it is specified in which process the substance is generated from the analysis result, and feedback is applied to the line as soon as possible to improve the failure.
If foreign matter is present below the surface, in step 79 using the FIB apparatus, the voltage to the extraction electrode 13 is made negative with respect to the plasma potential, and the voltage of the ion optical system 101 is focused. The beam current is increased to irradiate the FIB 14 having a large beam diameter, and the cross section is processed from the upper layer of the foreign matter by the FIB function. Thereafter, in step 80 using the FIB apparatus, the extraction voltage and the voltage of the ion optical system 101 are switched again, the beam current is reduced to make the beam diameter smaller than the foreign matter, and the electron beam 29 is scanned across the cross section to obtain the SEM. If the Auger spectroscopic analysis is performed using the function, the foreign matter generation process can be similarly specified in the defect analysis apparatus.
[0039]
In addition, current control is performed by plasma density control that does not generate impurities or foreign matters even during the SEM function, and gas ions from an ion source using plasma instead of conventional gallium ions are used for cross-section processing of foreign matters during the FIB function. In addition, since current control is performed without using an aperture, it is also characterized in that element analysis and a defective process can be identified with high accuracy without contaminating the wafer with impurities.
In this embodiment, naturally, SEM observation / FIB processing / analysis can be carried out in one apparatus. However, in the embodiment shown in FIGS. 7, 9, and 11 as well, SEM observation / FIB processing / analysis 2 is performed. If more than one can be carried out in the same device, it is possible to shorten the time for foreign matter analysis by shortening the transport time between devices including the vacuum exhaust time and the positioning time for foreign matter, etc.In addition, there is also the effect that the device occupation area can be reduced, It goes without saying that this is a desirable form as an analysis device.
[0040]
【The invention's effect】
According to the present invention, the microwave power supplied from the microwave power source to the semi-coaxial resonator converts the gas in the plasma chamber installed inside the semi-coaxial resonator into plasma, and locally generates high-density plasma. By supplying high-frequency power to the plasma through a high-frequency antenna provided inside the movable central conductor and simultaneously increasing the density of the plasma by supplying high-frequency power simultaneously with the microwave, a high beam current can be generated. A wide range of beam currents of about several nA can be obtained, and there is an effect that analysis or processing can be performed with an optimum beam current, that is, a beam diameter, using a charged particle beam that does not generate impurities and foreign matters.
In addition, according to the present invention, it is possible to perform analysis and processing with an optimum beam current, that is, a beam diameter, using a charged particle beam that does not generate impurities and foreign matters. It is possible to improve the yield and quality of semiconductor devices and the like by accurately identifying the manufacturing process in which a defect such as a foreign substance is generated and reducing or eliminating the cause of the defect at an early stage.
[0041]
In addition, according to the present invention, cross-section processing can be performed without generating impurities and foreign matter, and when applied to defect analysis of a semiconductor production line, the position data of foreign matter found in a foreign matter inspection device or appearance inspection device. Based on the above, it has become possible to perform elemental analysis of foreign matters by means of cross-section processing and analysis equipment of foreign matters. As a result, it is possible to identify a defective process in which foreign matter has occurred, and to obtain a beam current of several pA to several nA necessary for FIB processing without using an aperture. In addition, the generation of impurities and foreign matters can be suppressed by using no aperture.
In addition, according to the present invention, the FIB apparatus can perform cross-section processing and oxide film removal processing for exposing defects such as foreign matter without generating impurities or foreign matter, and can be used for failure analysis of semiconductor manufacturing lines. When applied, it is possible to perform elemental analysis of defects such as foreign substances by processing and analysis equipment that exposes defects such as foreign substances based on position data of defects such as foreign substances discovered by foreign substance inspection devices and visual inspection devices. As a result, there is an effect that it is possible to specify a defective manufacturing process that generates defects such as foreign matter.
[0042]
In addition, according to the present invention, by the switching operation of the FIB and SEM functions in the charged particle beam apparatus, analysis such as Auger spectroscopic analysis and EDX analysis, which conventionally required a separate primary electron beam column for analysis, is the same. It has become possible to use a charged particle beam device. This ensures the space around the sample to be analyzed, prevents the axial displacement of the FIB and the primary beam for analysis, shortens the time for foreign matter analysis by shortening the transport time between devices including the vacuum exhaust time and the positioning time for foreign matter, etc. Can now be reduced.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a principal part showing a first embodiment of a plasma charged particle source according to the present invention.
FIG. 2 is a cross-sectional view showing the structure of a coaxial resonator and a semi-coaxial resonator according to the present invention.
FIG. 3 is a cross-sectional view of the main part showing the operation of the first embodiment of the plasma charged particle source shown in FIG. 1;
4 is a diagram showing a magnet arrangement and magnetic flux density distribution for generating the cusp magnetic field shown in FIG. 1; FIG.
FIG. 5 is a diagram showing the dependence of the ion beam current and energy width on a high-frequency power introduced from a high-frequency antenna with a constant microwave power applied.
FIG. 6 is a diagram showing a comparison of characteristics between a control method of the present invention and a control method using a conventional aperture.
FIG. 7 is a diagram for explaining an application example in which the first embodiment of the plasma charged particle source according to the present invention is applied to a semiconductor production line;
FIG. 8 is a cross-sectional view of a principal part showing a second embodiment of a plasma charged particle source according to the present invention.
FIG. 9 is a diagram for explaining an application example in which the second embodiment of the plasma charged particle source according to the present invention is applied to a semiconductor production line;
FIG. 10 is a cross-sectional view of a principal part showing a third embodiment of a plasma charged particle source according to the present invention.
FIG. 11 is a diagram for explaining an application example in which the third embodiment of the plasma charged particle source according to the present invention is applied to a semiconductor production line;
FIG. 12 is a diagram for explaining a configuration in which the FIB function and the SEM function are switched by switching the power supply voltage as the charged particle beam apparatus according to the present invention.
FIG. 13 is a diagram for explaining an application example to a semiconductor manufacturing line when a charged particle beam apparatus according to the present invention has an SEM function.
FIG. 14 is a view showing a charged particle beam apparatus provided with a plasma charged particle source and an optical system according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Semi-coaxial resonator, 2 ... Microwave introduction | transduction coaxial connector, 2a ... Antenna, 3 ... Movable center conductor, 4 ... High frequency antenna for high frequency electric power introduction, 5 ... High frequency coaxial cable, 6 ... Slew tab tuner (movable stub matching 7) Plasma, 8 ... Plasma chamber, 9 ... Magnet, 10 ... Linear shaft, 11 ... Gas flow path, 12 ... High voltage cable, 13 ... Extraction electrode, 14 ... Ion beam (FIB), 15 ... High voltage Application terminal, 16 ... gas introduction tube, 17 ... magnet, 18 ... yoke, 19 ... TOF-SIMIS, 20 ... foreign matter, 21 ... surface of semiconductor wafer, 22 ... electron, 23 ... ion, 24 ... reference electrode, 25 ... condenser lens 26 ... Deflection control system, 27 ... Object lens, 28 ... Sample stage, 29 ... Electron beam
DESCRIPTION OF SYMBOLS 101 ... Optical system, 102 ... Object, 103 ... Plasma charged particle source, 104 ... Secondary charged particle detector

Claims (17)

A semi-coaxial resonator that resonates microwaves;
A plasma chamber installed in a hollow portion facing the semi-coaxial portion of the semi-coaxial resonator and into which a gas to be converted into plasma is introduced;
A microwave power introduction window for introducing microwave power resonated by the semi-coaxial resonator into the plasma chamber;
A high frequency antenna for introducing high frequency power into the plasma chamber;
An extraction electrode for extracting charged particles plasmatized in the plasma chamber ;
A charged particle source characterized in that the high-frequency antenna is provided in a semi-coaxial portion so as to face the plasma chamber . Charged particle source according to claim 1, further comprising a high frequency power control means for controlling the high frequency power supplied to the high frequency antenna. 2. A cusp magnetic field generating means for forming a cusp magnetic field around the inside of the plasma chamber so that an electromagnetic wave can propagate to the ECR point in the plasma converted into plasma in the plasma chamber. Or the charged particle source of 2 . 3. The apparatus according to claim 1 or 2, further comprising magnetic field lines generating means for generating magnetic field lines that allow high-frequency electromagnetic waves generated by the high-frequency antenna to propagate through plasma that has been converted into plasma in the plasma chamber. 3. The charged particle source according to 3 . 5. The charged particle source according to claim 1, 2, 3, or 4 , wherein in the semi-coaxial resonator, the semi-coaxial portion is configured to be movable in an axial direction. The charged particle source according to claim 1, 2, 3, or 4, wherein the semi-coaxial resonator includes a matching unit that adjusts a resonance state of a microwave in the resonator. Wherein as a gas to be introduced into the plasma chamber, according to claim 1 or 2 or 3 or charged particle source according 4, characterized in that any of the gas species of the inert gas or nitrogen gas. A semi-coaxial resonator for resonating microwaves, a plasma chamber in which a gas to be converted into plasma is introduced, and a semi-coaxial resonator in the plasma chamber. and an extraction electrode to draw charged particles into plasma and the high frequency antenna to introduce the high-frequency power in the plasma chamber to the microwave power introduced windows plasma chamber for introducing a resonant microwave power, the high frequency antenna A charged particle source provided in a semi-coaxial portion so as to face the plasma chamber ;
An optical system for focusing and deflecting the charged particle beam extracted from the extraction electrode of the charged particle source to irradiate the object;
A charged particle beam apparatus comprising a secondary charged particle detector for detecting secondary charged particles generated from the object. 9. The charged particle beam apparatus according to claim 8 , wherein the charged particle source further comprises high frequency power control means for controlling high frequency power supplied to the high frequency antenna. The charged particle source further includes cusp magnetic field generating means for forming a cusp magnetic field around the plasma chamber so that electromagnetic waves can propagate to the ECR point in the plasma converted into plasma in the plasma chamber. The charged particle beam apparatus according to claim 8 or 9, characterized in that: The charged particle source further includes a magnetic force line generating means for generating a magnetic force line capable of propagating the high frequency electromagnetic wave generated by the high frequency antenna through the plasma converted into plasma in the plasma chamber. The charged particle beam device according to claim 8, 9 or 10 . And a control means for switching and controlling the extraction electrode of the charged particle source and the power supply voltage supplied to the optical system so as to switch and irradiate the target with an ion beam and an electron beam. The charged particle beam device according to claim 8, 9, 10, or 11 . The secondary charged particle detector, characterized in that a analysis means for performing elemental analysis of the material formed on the object by the secondary charged particles detected by the claims 8 or 9 or 10 or 11 or 12, wherein Charged particle beam device. An inspection process for inspecting defects such as foreign matters generated on a substrate processed in a semiconductor production line;
A semi-coaxial resonator for resonating microwaves, a plasma chamber in which a gas to be converted into plasma is introduced, and a semi-coaxial resonator in the plasma chamber. and an extraction electrode to draw charged particles into plasma and the high frequency antenna to introduce the high-frequency power in the plasma chamber to the microwave power introduced windows plasma chamber for introducing a resonant microwave power, the high frequency antenna A charged particle beam extracted from a charged particle source provided in a semi-coaxial portion so as to face the plasma chamber is focused by an optical system to irradiate a defect on the substrate inspected in the inspection step, and from the defect Detecting the generated charged particles, X-rays, or light with a detector and performing defect elemental analysis And a step,
And a specific step of specifying a defective manufacturing step of the semiconductor manufacturing line based on the element of the defect analyzed in the element analyzing step of the defect. An inspection process for inspecting defects such as foreign matters generated on a substrate processed in a semiconductor production line;
A semi-coaxial resonator for resonating microwaves, a plasma chamber in which a gas to be converted into plasma is introduced, and a semi-coaxial resonator in the plasma chamber. and an extraction electrode to draw charged particles into plasma and the high frequency antenna to introduce the high-frequency power in the plasma chamber to the microwave power introduced windows plasma chamber for introducing a resonant microwave power, the high frequency antenna A charged particle beam extracted from a charged particle source provided in a semi-coaxial portion so as to face the plasma chamber is focused by an optical system and irradiated onto a defect region on the substrate inspected in the inspection step, A defect exposure process for exposing defects;
Elemental analysis process of defects for performing elemental analysis on the defects exposed in the defect exposure process;
And a specific step of specifying a defective manufacturing step of the semiconductor manufacturing line based on the element of the defect analyzed in the element analyzing step of the defect. In a semiconductor device manufacturing method for manufacturing a semiconductor device by processing a substrate on a semiconductor manufacturing line,
An inspection process for inspecting defects such as foreign matters generated on a substrate processed in the semiconductor manufacturing line;
A semi-coaxial resonator for resonating microwaves, a plasma chamber in which a gas to be converted into plasma is introduced, and a semi-coaxial resonator in the plasma chamber. and an extraction electrode to draw charged particles into plasma and the high frequency antenna to introduce the high-frequency power in the plasma chamber to the microwave power introduced windows plasma chamber for introducing a resonant microwave power, the high frequency antenna A charged particle beam extracted from a charged particle source provided in a semi-coaxial portion so as to face the plasma chamber is focused by an optical system to irradiate a defect on the substrate inspected in the inspection step, and from the defect Detecting the generated charged particles, X-rays, or light with a detector and performing defect elemental analysis And a step,
The defect manufacturing process of the semiconductor manufacturing line is specified based on the defect element analyzed in the defect element analysis process, and the factor causing the defect is reduced or eliminated by feeding back to the specified defect manufacturing process. And a control step of controlling the semiconductor device. In a semiconductor device manufacturing method for manufacturing a semiconductor device by processing a substrate on a semiconductor manufacturing line,
An inspection process for inspecting defects such as foreign matters generated on a substrate processed in the semiconductor manufacturing line;
A semi-coaxial resonator for resonating microwaves, a plasma chamber in which a gas to be converted into plasma is introduced, and a semi-coaxial resonator in the plasma chamber. and an extraction electrode to draw charged particles into plasma and the high frequency antenna to introduce the high-frequency power in the plasma chamber to the microwave power introduced windows plasma chamber for introducing a resonant microwave power, the high frequency antenna A charged particle beam extracted from a charged particle source provided in a semi-coaxial portion so as to face the plasma chamber is focused by an optical system and irradiated onto a defect region on the substrate inspected in the inspection step, A defect exposure process for exposing defects;
Elemental analysis process of defects for performing elemental analysis on the defects exposed in the defect exposure process;
The defect manufacturing process of the semiconductor manufacturing line is specified based on the defect element analyzed in the defect element analysis process, and the factor causing the defect is reduced or eliminated by feeding back to the specified defect manufacturing process. And a control step of controlling the semiconductor device.

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