JP2010003596A - Charged particle beam machining apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle beam machining apparatus that implements an improved apparatus availability factor by avoiding a machining error caused by a charging phenomenon of sputter emitted from a beam diaphragm. <P>SOLUTION: The material of the beam diaphragm is predetermined such that a deposited film on an optical element surface downstream of the beam diaphragm which is generated by sputter particles emitted from the beam diaphragm is conductive. Preferably, the material of the beam diaphragm is carbon or a compound thereof. More preferably, an electrode having an electric potential is arranged downstream of the beam diaphragm. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a charged particle beam apparatus that performs observation and analysis of a semiconductor device or the like or manufactures a micro sample for measurement. For example, the present invention relates to an apparatus that uses an ion beam or an electron beam as the charged particle beam apparatus.

  In recent years, inspection and analysis techniques for reducing the manufacturing costs of semiconductor devices typified by microprocessors, semiconductor memories typified by dynamic random access memories, and electronic components such as magnetic heads have attracted attention.

  If advanced inspection and analysis techniques can be used to shorten the development period and improve yields early by optimizing process conditions and analyzing defects, enormous losses can be reduced.

  Conventionally, at least one of a plurality of wafers was taken out for each process, and the wafers were cut and subjected to cross-section processing and inspection. However, since the wafers became large and expensive, Loss cannot be ignored. For this reason, in recent years, a so-called in-line cross-sectional observation technique has been developed in which a wafer subjected to cross-sectional inspection is returned to the production line and a chip other than the cross-sectionally observed chip is used as a non-defective product.

  In in-line cross-sectional observation, in order to prevent metal contamination due to metal injection by gallium ion irradiation to the sample during drilling, elements and compounds such as silicon and germanium that do not cause metal contamination instead of gallium ion beam, A gas such as argon or nitrogen is used.

  An apparatus that extracts an ion beam that does not adversely affect the electrical characteristics of a sample from an ion source for electrodeless discharge using microwaves, focuses the ion beam, irradiates the sample, and performs processing is disclosed in Japanese Patent Application Laid-Open No. Hei. 7-320670.

  An apparatus that uses a low-intensity ion source such as a field emission gas ion source as an ion source for extracting an ion beam, projects an image of an opening in the processing optical system on the surface of the sample, and performs processing is disclosed in JP-T-2003-524182. It is disclosed.

  Japanese Unexamined Patent Publication No. 2007-529091 discloses an apparatus that uses an inductively coupled high-intensity ion source as an ion source for extracting an ion beam, focuses the beam, irradiates a sample, and performs processing.

  In addition, the wafer is processed using an ion beam of an element that does not cause a problem in the process, and the material of the probe or sample holder used for microsampling and the projection mask projected onto the sample surface is either silicon, germanium, or carbon. Japanese Patent Application Laid-Open No. 2006-139917 discloses an apparatus including the above.

Japanese Unexamined Patent Publication No. 7-320670 Special Table 2003-524182 Special table 2007-529091 gazette JP 2006-139917 A

  As a result of intensive studies on an apparatus suitable for in-line cross-section observation, the present inventor has obtained the following knowledge.

  A processing optical system for extracting an ion beam from an ion source, focusing and deflecting the sample to irradiate the sample includes a beam stop having a circular hole for extracting only a part of the beam. After passing through the beam stop, only the central beam is extracted and the peripheral beam is cut. This is because if a beam including the peripheral portion is used, beam sagging (region where the energy density of the beam is reduced) occurs in the peripheral portion, and a sharp cross-sectional processed shape cannot be obtained on the sample surface. Another reason for this is that a lens is sputtered by irradiating a lens downstream of the beam stop, causing problems such as deterioration of lens performance and shortening of the life.

  As the material of this beam stop, silicon containing boron was used in order to prevent metal contamination. However, when used for a long time, due to beam irradiation, silicon sputters and secondary ions from the silicon beam diaphragm adhere to the electrode surface of an optical element such as a deflector arranged downstream, and silicon sputter. A film is formed. Since this film is silicon, it is a semiconductor, and secondary ions and the like that reach the electrode together with the silicon sputtered particles remain on the silicon sputtered film and cause charging. Due to this charging, the electric field distribution changes, the ion beam drifts, the machining position drifts with time, and a defect that causes machining defects occurs.

  In each of Patent Documents 1 to 3, the configuration of the apparatus is described, but the material of the member used for the processing optical system for preventing metal contamination is not considered, and the inside of the irradiation optical system is not considered. The optical element is irradiated with an ion beam, and the generated metal contamination is not considered. In Patent Document 4, no consideration is given to the material of the beam stop that limits the diameter of a plurality of beams arranged in the irradiation optical system.

  As a countermeasure against charging by the silicon sputtered film, the vacuum container in which the optical element is stored may be leaked from the vacuum, returned to the atmosphere, and the optical element may be replaced. However, these optical elements usually have a structure for applying a voltage or the like, and it is necessary to remove a voltage application wiring or the like for replacement. The replacement work is difficult, time consuming, and the operating rate of the apparatus is significantly reduced.

  An object of the present invention relates to avoiding a processing defect due to a charging phenomenon caused by a sputtered matter generated from a beam stop and improving the operating rate of the apparatus in a charged particle beam processing apparatus.

  The present invention relates to the use of a material in which an adhesion film formed on the surface of an optical element downstream of a beam stop, which is generated by sputtered particles emitted from the beam stop, exhibits conductivity as a material of the beam stop.

  Preferably, the material of the beam stop is carbon or a compound thereof.

  Preferably, an electrode to which a potential is applied is disposed downstream of the beam stop.

  Preferably, in order to remove the adhesion film of the optical element, a reactive gas containing fluorine capable of selectively removing the adhesion film, or water or hydrogen peroxide vapor is irradiated to the vicinity of the sputtered film. . Preferably, means for irradiating the surface of the adhesion film with an ion beam is provided in order to remove the adhesion film of the optical element.

  Preferably, a function for detecting a processing position deviation is provided, and when the position deviation is detected, means for removing the sputtered film is provided by the above means.

  According to the present invention, the life until replacement of the optical element in the processing optical system is extended. Thereby, the stable operation of the charged particle beam apparatus can be realized, and a charged particle beam apparatus with a high operating rate can be provided.

  The embodiment includes an ion source, a sample stage that holds the sample, and an irradiation optical system that extracts the ion beam from the ion source and irradiates the sample, and the irradiation optical system extracts the vicinity of the center of the ion beam. When the sputtered particles emitted from the beam stop adhere to an optical element downstream of the beam stop to form an adhesion film, the adhesion film becomes conductive. Disclosed is a charged particle beam processing apparatus using the indicated material.

  In addition, the embodiment discloses a charged particle beam processing apparatus in which the material of the beam stop is carbon or a compound thereof.

  In addition, the embodiment discloses a charged particle beam processing apparatus in which the element type of the ion beam is an inert gas type, oxygen, or nitrogen.

  In addition, the embodiment includes an ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system is located near the center of the ion beam. A charged particle beam having a beam stop having a hole for taking out, irradiating the surface of the optical element downstream of the beam stop with a reactive gas, and removing an adhesion film formed by sputtered particles emitted from the beam stop A processing apparatus is disclosed.

  In addition, the embodiment discloses a charged particle beam processing apparatus in which the adhesion film includes silicon and the reactive gas includes fluorine.

  In addition, the embodiment discloses a charged particle beam processing apparatus in which the attached film includes carbon and the reactive gas includes water or hydrogen peroxide vapor.

  In addition, the embodiment discloses a charged particle beam processing apparatus that irradiates an adhesion film with a reactive gas, deflects an ion beam, and irradiates the adhesion film with the ion beam.

  In addition, the embodiment includes an ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system is located near the center of the ion beam. Disclosed is a charged particle beam processing apparatus having a beam stop having a hole for taking out, and arranging an electrode for applying a potential between the beam stop and an optical element located downstream thereof.

  In addition, the embodiment includes an ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system is located near the center of the ion beam. Charged particle beam processing having a beam stop having a hole for taking out, arranging a plurality of beam stops upstream of the optical element, and placing the optical element at a position where sputtered particles from the beam stop do not adhere to the optical element An apparatus is disclosed.

  In addition, the embodiment includes an ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system is located near the center of the ion beam. A charged particle beam processing apparatus having a beam stop having a hole for taking out, a detection function for detecting a processing position shift on the sample, and removing an adhesion film on an optical element downstream of the beam stop Disclose.

  In addition, the embodiment discloses a charged particle beam processing apparatus that irradiates a sample by reducing the diameter of an ion beam extracted from an ion source.

  In addition, the embodiment discloses a charged particle beam processing apparatus including an irradiation optical system including a mask having an opening and a projection lens that projects an image formed by the opening of the mask onto a sample.

  The above and other novel features and effects of the present invention will be described below with reference to the drawings. The drawings are used for understanding the invention and do not reduce the scope of rights.

  FIG. 1 is an overall schematic diagram of a charged particle beam apparatus according to the present embodiment.

  The apparatus is roughly divided into an ion beam column 3 including a processing optical system for guiding an ion beam 2 emitted from the ion source 1 and the ion source 1 to a processing point, a sample holder 5 for mounting the sample 4, and a sample holder 5 An axially moving stage 6, a sample chamber 7, a FOUP (front opening unified pod) (not shown), an atmospheric transfer unit, a load lock chamber (not shown), a gas cylinder for supplying ion source gas to the ion source 1, etc. A gas supply source (not shown), a secondary electron detector (not shown) for detecting secondary electrons generated when an ion beam is irradiated, a power source 10, a central control unit 11 for controlling the whole, and near a processing point Gas gun (not shown) that supplies GAD (gas assisted deposition) gas from a gas nozzle, micro sampling unit (not shown) None), and the exhaust system. The sample 4 here includes a magnetic head other than a wafer, a liquid crystal, and the like.

  Each part will be described below.

  The stage 5 is movable in the X, Y (horizontal direction), Z (vertical direction), R (rotation), and T (tilt) axes. The T-axis is used when observing a cross section after sputtering with an ion beam, or extracting microsampling from a sample. As the sample 4, for example, a Φ300 wafer is used. For this reason, the moving distance in the X and Y axis directions is 320 millimeters, and it moves in several seconds. A laser is used for wafer positioning, and the accuracy is about submicrometer. For driving in the Z-axis direction, a ball screw and nut, a DC motor, and an encoder are used as in the X and Y axes. The movement in the Z-axis direction employs a wedge structure, and has a positioning accuracy of about submicron.

  When the ion beam 2 is irradiated, reflected electrons and secondary electrons are emitted from the sample 4. These are attracted by the electric field of a scintillator (not shown) to which a positive potential is applied in the secondary electron detector, and are accelerated to light the scintillator. The emitted light enters the photomultiplier tube by a light guide (not shown) and is converted into an electric signal. The output of the photomultiplier tube is further amplified to change the luminance of the cathode ray tube. By synchronizing with the scan, a secondary electron image at the processing point is generated.

  The micro-sampling unit (not shown) has a structure that can move in the three axial directions of the X, Y, and Z axes. A defective part is extracted from the sample 4. For driving, a linear actuator, a piezoelectric element, or the like is used. The probe (not shown) can move with submicrometer positional accuracy. The probe (not shown) is made of silicon to prevent metal contamination and includes boron to reduce resistivity.

  A gas gun (not shown) can precisely drive a gas nozzle (not shown) by an air cinder. When performing GAD (Gas Assisted Deposition), the gas nozzle is moved to a height of several hundred μm from the processing point of the sample within a few seconds from the retracted position. TEOS (tetraethoxysilane) is used as the deposition gas. The deposition gas forms a silicon oxide film by decomposition with an ion beam.

  A deyu plasmatron is used as the ion source. When oxygen gas is allowed to flow through the cathode 12 to a gas pressure of several Torr and a DC voltage is applied between the cathode 12 and the anode electrode 15, glow discharge occurs during this time, and ions collide with the cathode 12. The electrons are accelerated to the anode electrode 15 and collide with the electrodes, generating secondary electrons. These electrons ionize and ionize the gas before colliding with the anode electrode 15. A resistor (not shown) is attached to the intermediate electrode 13, and most of the electrons flow to the anode electrode 15 due to a voltage drop caused by a current flowing therethrough. Electrons and ions are confined by the magnetic field generated by the permanent magnet 14 to generate high-density plasma. The ion beam 2 is extracted from the anode aperture 16 by an electric field with an extraction electrode (not shown) having a ground potential from the plasma. The anode aperture 16 has a hole of φ0.3 mm. From this hole, an oxygen ion beam 2 having an acceleration energy of 30 kV and a current value of several μA is taken out.

  The adjustment of the ion beam current value is mainly performed by changing a bias voltage obtained by adding a negative potential to the acceleration voltage.

  As the gas, an inert gas such as argon gas nitrogen, krypton, xenon, or neon gas can be used in addition to the oxygen gas.

  The above ion source is an example of a deyu plasmatron that confines plasma by a magnetic field and an electric field. The same applies to ion sources, microwave ion sources, and the like.

  The processing optical system includes a mass separator (not shown), a deflector (not shown), beam diaphragms 20 and 22, a deflector 21, a condensing lens 23, a projection mask 24, an astigmatism corrector (not shown), a blanker ( (Not shown), Faraday cup (not shown), deflector 25, projection lens 26, deflector (not shown), alignment coil, and the like.

  The ion beam 2 drawn out from the ion source 1 is focused on the vicinity of the principal point of the projection lens 26 in order to reduce the aberration by the condenser lens 23 composed of three Butler lenses. The ion beam that has passed through the projection mask 24 is imaged on the surface of the sample 4 at a reduction ratio of about 1/16 by a projection lens 26 constituted by three Butler lenses. It is also possible to scan with the deflector 25 to form an image for observation and processing.

  In the schematic diagram, there are two beam stops, but in reality, more beam stops are arranged so that metal sputtered particles do not reach the processing point as much as possible. Both beam stops are made of silicon containing boron in order to prevent metal contamination due to sputtering and reduce resistivity.

  FIG. 2 shows an overview of the projection mask 24. The projection mask, like the beam stop, is made of silicon containing boron to prevent metal contamination.

  The projection mask 24 has a U-shaped opening hole 30A, an opening hole 30B, mainly an opening hole 30C for deposition, and an opening hole 30D mainly used for bonding a probe, mainly for observation. In addition, a slit-like opening hole having a comparatively large aspect ratio of length and width for thin film processing (not shown) is formed. Only the ion beam that has passed through the hole is irradiated onto the sample 4.

  FIG. 3 shows a state in which the projection mask 24 is irradiated with the ion beam 2. In order to maximize the beam current after passing through the projection mask 24 and prevent the occurrence of beam chipping, the ion beam 2 is adjusted to a size and position that circumscribes the largest opening on the projection mask 24.

  FIG. 4 is a diagram in which some of the optical elements in the optical system of FIG. The optical axis of the ion beam is inclined 45 ° with respect to the sample 4. This figure is an explanatory view of a projection ion beam apparatus, but it is similarly applied to a FIB (Focused Ion Beam) apparatus that focuses an ion beam, irradiates the sample 4 like a single stroke, and processes it. It is possible.

  FIG. 5 is a diagram showing a so-called beam drift malfunction phenomenon. As described above, a plurality of beam stops 20 made of silicon containing boron (electric resistivity is 0.01 Ωm) are arranged in the irradiation optical system. However, when used for a long time, the silicon sputtered particles from the silicon beam stop 20 and the secondary ions 41 adhere to the electrode surface of the deflector 21 disposed downstream to form a silicon sputtered film 42. Since the main component of the film is silicon, it is a semiconductor, and sputtered particles and secondary ions 41 that reach the electrode together with the silicon sputtered particles remain on the silicon sputtered film 42 and cause charging. Since charging occurs over the entire electrode surface, the beam travel time in the region affected by charging is long, and the amount of beam drift increases. As a result, the machining position drifts with time, and a defect that causes machining defects occurs. Specifically, the shape of the U-shaped machining mark 27 shown in FIG. 4 is broken, and the originally sharp machining shape becomes a machining shape blurred around. In the worst case, the part where defect analysis is desired is also processed. When such a malfunction occurs, the deflector 21 needs to be replaced. Unlike the beam stop 20, the deflector 21 is wired to apply a potential. Compared with the beam stop 20, the deflector 21 is difficult to replace and takes a long time for the replacement work. The rate is significantly reduced.

  FIG. 6 is a diagram showing an ion beam trajectory when a carbon beam stop 20 is used as an example. The material of the beam stop 20 was carbon that has a low electric resistivity of about 1E-5 (Ωm). Carbon compounds can be used as well, but it is desirable to use those having an electrical resistivity of about 1E-5 (Ωm). The carbon adhesion film 45 on the surface of the electrode 40 of the deflector 21 becomes conductive. Charges such as secondary ions scattered from the beam stop 20 together with the sputtered atoms and reaching the electrode surface pass through the conductive carbon adhesion film 45 and flow to the ground via the power source 10, and charging does not occur. . That is, it becomes possible to prevent beam drift due to charging, which has occurred when a silicon beam stop is used. Further, an electrode 46 to which a potential is applied is disposed between the beam stop 20 and the deflector 21 so that secondary ions can be driven back toward the beam stop 20 before reaching the deflector 21. The amount of charge adhering to 21 can be reduced. This method is particularly effective when, for example, a beam diaphragm made of silicon is used as the beam diaphragm, and the deposited film becomes a semiconductor and charging is likely to occur.

  FIG. 7 shows how the silicon sputtered film 42 attached to the condenser lens 23 is removed. Examples of the adhesion film include a semiconductive material such as the silicon sputter film 42 and a conductive film such as the carbon adhesion film 45. The condenser lens 23 is composed of three SUS lenses, and has a hole for passing a beam of about φ1. A ground potential is applied to the first and third electrodes from the upstream side, and a positive potential of several kV is applied by the power source 10 to the second electrode to focus the ion beam. In the case where the silicon beam stop 20 is used, the silicon sputtered film 42 particularly adheres to the upstream side of the condenser lens 23. A reactive gas 51 of xenon difluoride containing fluorine is locally irradiated in the vicinity of the adhesion film using a gas nozzle 52. In the drawing, a nozzle is used as the gas supply method, but it is also possible to form a gas passage inside the electrode and irradiate the gas. In addition, the ion beam 2 is deflected by the deflector 53 to irradiate the adhesion film, and by irradiating the gas, beam assisted etching can be performed to selectively remove the adhesion film. By this beam assist etching, the etching rate of the silicon sputtered film can be significantly faster than that of the metal that is the material of the electrode, so that the deposited film can be removed with almost no damage to the electrode. As the ion beam at this time, it is necessary to scan and irradiate the deposited film with a beam having a relatively low current value of about several hundred pA after passing through the opening hole 30C or the opening hole 30D. This is because if the irradiation beam current density is too high, the above selective etching becomes impossible and the gas supply amount is insufficient, so that the sputtering effect becomes more prominent than the deposit and damages the electrodes. One of the timings for removing the above-mentioned adhesion film is to obtain a beam irradiation amount (= irradiation beam current × irradiation time) that generates a beam drift in advance, and monitor the beam irradiation amount after exchanging the beam aperture. In addition, there is a method of removing by the above-described method when the threshold value is exceeded. The other is, for example, a method of performing a processing position deviation test before daily operation of the apparatus, and removing the same when a position deviation is detected. As described above, it is possible to take measures against the problem of processing position failure due to beam drift. As the reaction gas 51, it is also possible to use a compound of fluorine and carbon other than the above.

  In addition, when the carbon beam stop 20 is used, ion beam drift that occurs when silicon is used is less likely to occur. However, if the adhesion film exceeds a certain film thickness, the film easily peels off and becomes a foreign substance. there is a possibility. Therefore, it is necessary to remove periodically. It is also possible to selectively remove the deposited carbon adhesion film 45 by irradiating water or hydrogen peroxide vapor from the gas nozzle 52 and performing beam assist etching.

  FIG. 8 shows how the ion beam 2 extracted from the anode aperture 16 collides with the beam stop 20 and emits sputtered particles. The ion beam 2 colliding with the hole of the beam stop 20 emits the largest amount of sputtered particles in the direction of reflection at the collision point, and decreases in the other direction according to the cosin law. Secondary ions 41 are released. As a result, the sputtered film adheres to the inner surface of the deflector 21. If the thickness of the beam stop is ideal (= 0), the outermost periphery of the beam is almost on the line 55 in the figure, and the sputtered particles of the beam stop and the secondary ions 41 adhere to the deflector 21. It is thought that there is nothing. However, since there is actually a thickness, as shown in the figure, sputtered particles adhere to the deflector 21.

  FIG. 9 shows that the sputtered material from the beam stop 20 adheres to the downstream side of the beam stop 20 in order to reduce the amount of spatters attached to the optical elements such as the deflector 21 arranged downstream. 95 shows a state in which 95 is arranged at a certain distance. The beam stop 95 is arranged such that the beam stop 95 comes outside the beam locus 56 obtained by the beam stop 20 and the anode aperture 16. Most of the sputtered particles and secondary ions 41 generated on the side surface of the hole of the beam stop 20 can be blocked by the beam stop 95. When the primary ion beam energy is about 30 keV, the energy of the sputtered particles generated on the side surface of the hole of the beam stop 20 is considerably low, about several eV to several tens eV. The particles and secondary ions 41 are rarely released again. The number of sputtered particles adhering is significantly increased by providing the beam stop 95 and disposing an optical element such as the deflector 21 outside the locus 57 of the sputtered particles obtained by the beam stop 20 and the added beam stop 95. Thus, the lifetime of the optical element can be extended. Specifically, the area where the deflector 21 is to be arranged is expressed by a simple mathematical formula: α = Arc tan ((D3−D2) / 2 / (L1 + L2)), β = Arc tan ((D2 / 2 + D3 / 2) / L2) Make the region larger than that.

1 is an overall configuration schematic diagram of a charged particle beam apparatus. An overview of the projection mask. The figure which shows the positional relationship of a projection mask and an incident ion beam. 1 is an overall configuration schematic diagram of a charged particle beam apparatus. The figure which shows a beam drift phenomenon. The figure which shows the mode of the beam orbit at the time of using carbon for a beam stop. The figure which shows a mode that the reactive gas and the beam were irradiated to the adhesion film of the electrode. The figure which shows the locus | trajectory of the sputtered particle etc. which are discharge | released from a beam stop. The figure which shows the locus | trajectory of a beam, a sputtered particle, etc. at the time of arranging two beam stops.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Ion source 2 Ion beam 4 Sample 5 Holder 6 Stage 7 Sample chamber 10 Power supply 11 Central controller 14 Permanent magnet 15 Anode electrode 16 Anode aperture 20, 22 Beam diaphragm 21, 25, 53 Deflector 23 Condensing lens 24 Projection mask 26 Projection lens 27 Processing mark 30A, 30B, 30C, 30D, 30E Opening hole 31 Projection mask fixing hole 40, 46 Electrode 41 Sputtered particles, secondary ions 42 Silicon sputtered film 43 Secondary ions 44 Drift 45 Carbon adhesion film 51 Reactive gas 52 Gas nozzle 55 Line 56 Beam trajectory 57 Sputtered particle trajectory

Claims (15)

An ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system takes out a hole near the center of the ion beam. A charged particle beam processing apparatus having a beam stop having a portion,
As the material of the beam stop, a material is used in which, when sputtered particles emitted from the beam stop adhere to an optical element downstream of the beam stop to form an attached film, the attached film exhibits conductivity. Equipment. The charged particle beam processing apparatus according to claim 1,
An apparatus characterized in that a material of the beam stop is carbon or a compound thereof. The charged particle beam processing apparatus according to claim 1,
An apparatus characterized in that the elemental species of the ion beam is an inert gas species, oxygen, or nitrogen. The charged particle beam processing apparatus according to claim 1,
An apparatus for reducing the diameter of an ion beam drawn from the ion source and irradiating the sample. The charged particle beam processing apparatus according to claim 1,
The irradiation optical system includes a mask having an opening, and a projection lens that projects an image formed by the opening of the mask onto the sample. An ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system takes out a hole near the center of the ion beam. A charged particle beam processing apparatus having a beam stop having a portion,
An apparatus for irradiating a surface of an optical element downstream of the beam stop with a reactive gas and removing an adhesion film formed by sputtered particles emitted from the beam stop. In the charged particle beam processing apparatus according to claim 6,
The apparatus according to claim 1, wherein the adhesion film includes silicon and the reactive gas includes fluorine. In the charged particle beam processing apparatus according to claim 6,
2. The apparatus according to claim 1, wherein the adhesion film contains carbon, and the reactive gas contains water or hydrogen peroxide vapor. In the charged particle beam processing apparatus according to claim 6,
An apparatus characterized by irradiating the adhesion film with the reactive gas, deflecting an ion beam, and irradiating the adhesion film with the ion beam. In the charged particle beam processing apparatus according to claim 6,
An apparatus characterized in that the elemental species of the ion beam is an inert gas species, oxygen, or nitrogen. In the charged particle beam processing apparatus according to claim 6,
An apparatus for reducing the diameter of an ion beam drawn from the ion source and irradiating the sample. In the charged particle beam processing apparatus according to claim 6,
The irradiation optical system includes a mask having an opening, and a projection lens that projects an image formed by the opening of the mask onto the sample. An ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system takes out a hole near the center of the ion beam. A charged particle beam processing apparatus having a beam stop having a portion,
An apparatus for disposing an electrode for applying an electric potential between the beam stop and an optical element located downstream thereof. An ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system takes out a hole near the center of the ion beam. A charged particle beam processing apparatus having a beam stop having a portion,
An apparatus comprising: a plurality of beam stops disposed upstream of an optical element; and the optical element is disposed at a position where sputtered particles from the beam stop do not adhere to the optical element. An ion source, a sample stage for holding the sample, and an irradiation optical system for extracting the ion beam from the ion source and irradiating the sample, and the irradiation optical system takes out a hole near the center of the ion beam. A charged particle beam processing apparatus having a beam stop having a portion,
An apparatus having a detection function of detecting a processing position shift on the sample and removing an adhesion film on an optical element downstream of the beam stop.

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