JP5384786B2 - Charged beam device and mirror body thereof - Google Patents

Description

  The present invention relates to a charged beam apparatus for observing / analyzing or processing a sample by irradiating a charged beam, and a mirror body thereof.

  In a charged beam apparatus that irradiates a charged beam (ion beam, electron beam) and observes / analyzes or processes a sample, when the charged beam is irradiated while supplying a reactive gas to the sample surface, the sample is deposited. (Beam-induced deposition) and etching can be locally accelerated. The former method is called gas assisted deposition (hereinafter abbreviated as GAD), and semiconductor wiring connection in a semiconductor integrated circuit (LSI) or the like, or focused ion beam (hereinafter referred to as “focused ion beam”). Processing of sample cross-section by FIB), formation of surface protection film to reduce damage to the sample when preparing a transmission electron microscope (hereinafter abbreviated as TEM), or marking of defective parts, etc. Has been used. On the other hand, the latter method is called Gas Assisted Etching (hereinafter abbreviated as GAE). In addition to high-speed removal of semiconductor wiring such as LSI, a good scanning electron microscope (hereinafter referred to as “Scanning Electron Microscope”) , Abbreviated as SEM), which is used to make the step of the processed surface remarkable by FIB in order to obtain an image.

  Some charged beam apparatuses that can use gas processing such as GAD and GAE include a gas nozzle connected to a gas source, and a reactive gas can be supplied to the sample by the gas nozzle. In such a charged beam apparatus, there is one in which a gas nozzle is disposed between an objective lens (final focus lens) and a sample (see Patent Document 1).

JP 2004-342583 A

  However, if a gas supply unit such as a gas nozzle is arranged between the objective lens (or retarding electrode or the like) and the sample as in the above technique, the magnetic pole end face (end face on the sample side) of the objective lens is arranged due to the arrangement. The working distance (working distance), which is the distance from the sample surface, becomes larger than when there is no gas supply unit, and the opening angle of the charged beam to the sample changes. If the beam opening angle changes and deviates from the optimum condition, the beam diameter increases and the beam resolution decreases, making it difficult to detect minute foreign matters, defects, and the like. Further, such a situation leads to a delay in pursuing the cause of the defect and countermeasures, and may cause a decrease in product yield.

  An object of the present invention is to provide a charged beam apparatus that can suppress a decrease in beam resolution even when gas treatment is performed.

In order to achieve the above object, the present invention provides a charged beam generation source for generating a charged beam and an upper pole and a lower pole for forming an electron lens for focusing the charged beam from the charged beam generation source on a sample. And a gas supply unit having a nozzle provided with a nozzle hole at the tip of the reactive gas. The nozzle is located between the upper pole and the lower pole, and is a charged beam on the sample. The ejection hole is held so as to be able to advance and retreat in the axial direction of the nozzle with respect to the irradiation part, the lower pole uses a part of a mirror of a charged beam device as a magnetic path, and the gas supply unit It is attached via a hole provided in the mirror body that is a magnetic path, and is provided in the mirror body so as to be located on the opposite side of the hole with respect to the central axis of the mirror body Another hole is further provided .

  According to the present invention, since the working distance can be reduced even when performing the gas treatment, it is possible to suppress a decrease in beam resolution.

  Embodiments of a charged beam apparatus according to the present invention will be described below with reference to the drawings.

  FIG. 1 is a diagram showing an overall configuration of a charged beam apparatus according to a first embodiment of the present invention.

  The charged beam apparatus shown in the figure includes a control unit 1 that controls each device provided in a mirror body (column) 150 (only an objective lens 32 (described later) is shown), and an electron source that generates an electron beam ( Charged beam generation source 3), extraction electrode 4 for extracting electron beam 19 having a predetermined emission current from electron source 3, first focusing coil 6 for focusing extracted electron beam 19, and focusing by first focusing coil 6. A diaphragm 7 for extracting only a necessary part of the electron beam 19, a second focusing coil 9 for focusing the electron beam 19 focused by the diaphragm 7, and focusing the electron beam 19 focused by the second focusing coil 9 to a minute An objective lens 32 that forms an electron lens that irradiates the sample 30 as a spot, and a gas gun (gas) that jets reactive gas to the irradiated portion (spot) of the electron beam 19 on the sample 30 Supply unit) 28, a secondary electron detector 16 for detecting secondary electrons 34 emitted from the sample surface by irradiation of the electron beam 19, and an E × B polarizer (orthogonal electromagnetic wave) for deflecting the secondary electrons 34. Field deflector) 12 and a deflection coil 11 that scans an electron beam 19 on a sample 30.

  Although not shown, the control unit 1 includes a processing unit (microprocessor and the like) that performs various processing operations, a storage unit (HDD, ROM, RAM, and the like) that stores processing programs and processing results, and instructions to the processing unit. Input unit (such as a keyboard) and a display unit (such as a monitor) for displaying various processing results. The control unit 1 is connected to a high voltage control power source 2 connected to the electron source 3 and the extraction electrode 4, a first focusing coil control power source 5 connected to the first focusing coil 6, and a second focusing coil 9. Second focusing coil control power source 8, deflection coil control power source 10 connected to deflection coil 11, E × B polarizer control power source 13 connected to E × B polarizer 12, and secondary electron detector 16 Secondary electron detector control power supply 15, backscattered electron detector control power supply 17 connected to backscattered electron detector 20 (described later), booster electrode voltage control power supply 21 connected to booster electrode 18 (described later), objective lens coil 22 An objective lens coil voltage control power source 25 connected to (described later), a gas gun controller 26 connected to the gas gun 28, and a retarding electrode control power source 29 connected to the retarding electrode 24. It is, are controlled appropriately by using the processor, and the like of each of these power supply or the like.

  As the electron source 3, it is preferable to use an electron source having excellent probe current stability. In this embodiment, a shot emission electron source is used as the electron source 3.

  The objective lens 32 includes an objective lens coil 22 that generates a magnetic field by a voltage applied to the objective lens coil voltage control power supply 25 and an electrode (lower pole) 33 on the sample 30 side that is provided so as to contain the objective lens coil 22. An objective lens magnetic path 23 to be configured and a booster electrode (upper pole) 18 attached to the objective lens magnetic path 23 via an insulating portion 37 so as to be positioned above the lower pole 33 are provided so as to face the sample 30. Are provided at the lower end of the mirror body 150.

  Each of the booster electrode 18 and the lower electrode 33 has an annular structure, and forms a circular opening at the center of the mirror 150 through which the electron beam 19 passes. A recessed portion 50 is formed between the electrodes 18 and 33 and is recessed on the outer peripheral side of the mirror body 150. A hole 151 is provided on the concave portion 50 side of the objective lens magnetic path 23, and a gas gun 28 is attached to the hole 151. In order to ensure the uniformity of the magnetic field distribution near the objective lens 32, the diameter of the hole 151 is preferably as small as possible.

  In addition, it is preferable to provide a plurality of holes 151 so that the symmetry of the magnetic field distribution in the vicinity of the objective lens 32 is not disturbed by providing the holes 151 so as to be uniform in the circumferential direction with respect to the axis of the mirror 150. That is, when there are two holes 151, the other holes are provided on the opposite side so as to face each other with the central axis of the mirror 150 interposed therebetween, and when there are three or more holes 151, the positive holes centered on the central axis of the mirror 150 are provided. It is preferable to arrange each hole at the vertex position of the polygon. In this case, the gas gun 28 may be attached to at least one of the plurality of holes, and the other holes may be dummy holes to which the gas gun 28 is not attached. In the case of a dummy hole, the hole may be sealed with a nonmagnetic material (for example, SUS material, aluminum material, etc.) and the inside of the mirror 150 may be held in a vacuum. Of course, the gas gun 28 may be attached to each hole.

  The booster electrode 18 is applied with a positive or negative voltage by a booster electrode voltage control power source 21. Thereby, the beam diameter of the electron beam 19 on the sample 30 is reduced to improve the resolution, and the yield of secondary electrons and reflected electrons by the secondary electron detector 16 and the backscattered electron detector 20 (described later) is improved. You can make it.

  The objective lens magnetic path 23 constitutes a part of the mirror body 150 of the charged beam apparatus, and the material thereof is preferably pure iron. Thus, if it manufactures with a pure iron, even if it loads continuously on the objective lens coil 22 with the objective lens coil voltage control power supply 25 in order to obtain a required magnetic flux density, magnetic saturation will not generate | occur | produce.

  The E × B deflector 12 is adjusted so that an electric field and a magnetic field different from the primary electrons are applied to secondary electrons and the like. More specifically, the intensity of the electron beam 19 that is the primary electron is adjusted so that the electric field and the magnetic field cancel each other and consequently do not exert a deflection action, and the incident direction is the opposite of the secondary. The electron 34 is deflected and adjusted so as to enter the secondary electron detector 16.

  The secondary electron detector 16 is used when forming a secondary electron image. The secondary electron image is obtained by scanning the electron beam 19 on the surface of the sample 30 using the deflection coil 11 and synchronizing the intensity of the secondary electrons 34 detected by the secondary electron detector 16 with the scanning signal. For example, it is displayed on the display unit of the control unit 1.

  In addition to the above-described components, the charged beam apparatus according to the present embodiment includes a reflector 14 that is coated with a material (for example, gold, silver, platinum, or the like) that easily generates secondary electrons, and an electron beam. 19 includes a backscattered electron detector 20 that detects backscattered electrons emitted from the surface of the sample 30 by irradiation of 19, a retarding electrode 24 that applies a potential to the electron beam 19 and decelerates it. The backscattered electron detector 20 is provided so as to surround the central axis of the mirror body 150, and is used when a backscattered electron image is formed in the same manner as the secondary electron image by the secondary electron detector 16. The reflected electron image can detect irregularities on the sample observation surface.

  FIG. 2 is an enlarged sectional view showing the vicinity of the gas gun 28 in FIG. In addition, the same code | symbol is attached | subjected to the same part as the previous figure, and description is abbreviate | omitted (the following figure is also the same).

  As shown in the figure, the gas gun 28 includes a gas nozzle 31 provided with a jet hole 130 for jetting reactive gas at the tip, a main body 131 connected to the gas nozzle 31, and a main body 131 outside the mirror body 150 that is at atmospheric pressure. A body cover 132 covering the outer periphery, a vacuum bellow 40 covering the body 131 from the outer periphery inside the mirror 150 held in vacuum, a flange 133 attached to the hole 151 and holding the gas gun 28, and a gas cylinder (gas source) 45, a gas pipe 39 for supplying a reactive gas to the gas nozzle 31 is provided. Each member constituting the gas gun 28 is preferably made of a nonmagnetic material (for example, a SUS material or an aluminum material) in consideration of preventing the magnetic field distribution in the objective lens 32 from being disturbed as much as possible.

  The main body 131 is connected to an air cylinder (driving device) 35 via a joint member 36 at the end opposite to the gas nozzle 31 side, and a main body cover is provided via a plurality of roller bearings 37 arranged along the outer peripheral surface. It is housed in 132.

  The air cylinder 35 is connected to an air supply source (not shown), and advances and retracts the ejection hole 130 along the axial direction with respect to the sample 30 according to a command from the gas gun controller 26. When performing GAD and GAE, by utilizing this advance / retreat function, the ejection hole 130 can be brought close to the charged beam irradiation portion on the sample 30, and can be retracted in the recess 50 at other times. The gas gun 28 is provided with a stopper (not shown) for preventing the gas nozzle 31 from approaching the sample 30 for a certain distance or more, and prevents the sample or the tip of the nozzle from being damaged by an erroneous operation or the like. Yes. The roller bearing 37 suppresses the occurrence of shaft shake when the main body 131 moves back and forth. The fine adjustment of the advance / retreat of the gas nozzle 31 is performed by a fine adjustment mechanism (not shown).

  When changing the posture (elevation angle, depression angle, and swing angle) of the gas gun 28, an adjustment screw 38 provided on the flange 133 and holding the posture of the cover main body 132 is used. Two adjustment screws 38 are attached from the vertical direction and horizontal direction of the cover main body 132 via the flange 133, and the gas gun 28 is moved in a desired posture by appropriately advancing and retracting these four screws with respect to the screw holes. Hold on. The main body 131 is connected to a rotation drive device such as a motor and a power transmission device (both not shown) such as a gear. When the gas nozzle 31 is rotated around its axis, the rotation drive device is driven. Can be rotated.

  The vacuum bellows 40 is formed in a bellows shape so that the vacuum bellows 40 can be expanded and contracted as the main body 131 advances and retreats, and the inside (main body 131 side) is maintained at atmospheric pressure. Further, an O-ring 42 is provided between the flange 133 and the objective lens magnetic path 23 so as to surround the hole 151, and the inside of the mirror body 150 is held in a vacuum.

  The gas pipe 39 is connected to the upstream side via a plurality of gas cylinders 45 and a regulating valve 44, and on the downstream side, the gas pipe 39 is arranged in a coil shape so as to surround the vacuum bellows 40 from the outer periphery, and then coupled to the gas nozzle 31. . As described above, by arranging the gas pipe 39 in a coil shape, even if the main body 131 moves back and forth, it can expand and contract following it.

Each gas cylinder 45 appropriately stores GAD deposition gas and GAE etching gas, and the reaction gas to be used can be switched according to the work contents by opening and closing the adjustment valve 44. Examples of deposition gases include tungsten carbonyl (W (CO) ₆ ), tetraethyloxysilane (Si (OC ₂ H ₅ ) ₄ , also known as theos), which produces a silicon oxide film, and molybdenum carbonyl (M (CO) _6. ), Carbon-based gas, and the like. Examples of the etching gas include xenon difluoride (× eF ₂ ), fluorine-based gas (CF _4, etc.), chlorine-based gas, and the like.

  The gas gun 28 shown in the figure is supplied with gas by a gas cylinder 45 disposed outside (atmosphere side) of the mirror body 150. However, the position of the gas cylinder 45 is not limited to this, and the vacuum side (for example, Or inside the mirror body 150). Further, a plurality of gas tanks may be attached to the main body 131 in a ring shape in parallel or perpendicular to the axial direction of the gas nozzle 31. Further, when the gas source is solid or liquid at room temperature, the gas source is appropriately heated to increase the saturated vapor pressure and vaporize, and then supplied through the gas pipe.

  Here, referring back to FIG. 1, an orifice (throttle part) 160 that increases the flow resistance is provided above the objective lens 32 in the mirror body 150. In the vicinity of the supply point of the reactive gas, the pressure is increased by the gas and a continuous discharge is generated, and a pressure gradient is generated, and the reactive gas may flow backward to the upstream side (electron source 3 side) of the mirror 150. . This counter-flowing reactive gas adheres to the equipment (for example, the deflection coil 11 and the extraction electrode 4) inside the mirror 150 and becomes dirty, deteriorates the performance of the equipment, or adheres to an insulator and becomes charged and beam drift. It may cause the occurrence of. However, since the backflow of the evaporated material can be suppressed by the orifice 160 provided as described above, it is possible to suppress the reactive gas from entering the upstream of the mirror body 150 and accumulating as dirt.

  The orifice 160 is preferably provided at the downstream side of the lens body 150 as much as possible and at a location where the diameter of the electron beam 19 is as small as possible. In the present embodiment, the downstream side of the second focusing coil 9 and the deflection coil are provided. 11 on the downstream side. If it arrange | positions in such a location, since the diameter of an orifice can be made as small as possible, the backflow of reactive gas can be prevented more effectively. In order to prevent the occurrence of problems such as discharge, it is also effective to control the booster electrode 18 and the retarding electrode 24 so that the smallest possible voltage is applied.

  In addition, the first focusing coil 6, the diaphragm 7, the second focusing coil 9, the deflection coil 11, and the like described above can generate a desired charged beam (electron beam 19) extracted from the charged beam source (electron source 3) on the sample. A charged beam optical system 200 for irradiating the position is configured.

  The charged beam apparatus described above is a kind of scanning electron microscope (hereinafter abbreviated as SEM), and is used for defect observation used for observing defects and foreign matters in semiconductor production sites. This is a scanning electron microscope (hereinafter abbreviated as a review SEM). This review SEM does not include images (defect images) that contain each defect in the field of view based on inspection results (defect coordinate data, etc.) obtained by an inspection device (such as an optical inspection device or SEM inspection device). A function for automatically acquiring a non-defective pattern image (reference image) (Automatic Defect Review: hereinafter abbreviated as ADR), and a feature amount of each defect based on the defect image and reference image acquired by this ADR A function that automatically classifies defects by comparing the feature values obtained in this way with the data (teaching data) that is the standard for defect classification set in advance (automatic defect classification) ): Hereinafter abbreviated as ADC).

  The processing unit of the control unit 1 performs processing for capturing a defect image and a reference image based on the inspection result, processing for calculating a feature amount based on the image, processing for classifying the defect based on teaching data, and the like. The storage unit stores defect images and reference images, feature amount data, teaching data, a program used when performing each processing, and the like. The control unit 1 uses these to store the above ADR and ADC. It is carried out.

  Here, the main flow of typical wafer inspection work using the review SEM will be described.

  First, when performing ADR, an inspection wafer is carried into the sample chamber by a transfer means (for example, FOUP (Front Opening Unified Pod), an atmospheric transfer unit, etc.). Then, ADR is performed on the loaded wafer in low resolution observation (review mode), and ADC is performed subsequently. In this way, for example, defects are roughly classified according to the cause of occurrence of “peeling”, “foreign matter”, “scratch”, “dust”, etc., and these are further classified as “short-circuit”, “open”, “convex defect”. ”,“ Concave defect ”,“ VC (voltage contrast) defect ”, and the like. When it is necessary to observe in more detail the shape of the foreign matter, the defect portion, and the like thus classified, high-resolution observation is appropriately performed. Further, when it is necessary to further investigate the cause of the occurrence of a defective portion or the like, the wafer cross section may be processed by FIB or the like. Prior to the cross-section processing by FIB, it is necessary to put a mark (marker) indicating the processing location on the wafer using an electron beam deposit.

  By a series of these operations, the cause of defects such as wiring voids and contact defects can be specified, feedback to the manufacturing process can be made, and the yield of products can be improved.

  Next, the case where low-resolution observation, high-resolution observation, and electron beam deposition are performed in the review SEM will be described in detail with reference to the drawings.

  FIG. 3 is a diagram showing the position of the gas nozzle 31 and the state of voltage application to the electrodes 18 and 24 when performing low-resolution observation.

  When performing low-resolution observation, as shown in the figure, the gas nozzle 31 is retracted from the sample 30 by the air cylinder 35 so that the ejection hole 130 is accommodated in the recess 50 (for example, ejection from a position where gas treatment is performed). While holding the hole 130 at a position retracted 20 mm), the booster electrode voltage control power supply 21 applies a ground voltage to the booster electrode 18, and the retarding electrode control power supply 29 supplies a negative voltage (for example, −1 kV) to the retarding electrode 24. Apply. As a result, the electron probe current value is increased and the beam diameter is increased, so that foreign matters, defects and the like can be searched at high speed.

  Further, if the gas nozzle 31 is in the vicinity of the booster electrode 18, the electric field formed axisymmetrically between the lower electrode 33 and the booster electrode 18 may be disturbed to reduce the beam resolution. Is recessed in the recess 50. If the gas nozzle 31 is retracted in this way, the disturbance of the electric field by the gas nozzle 31 and the decrease in resolution can be suppressed. Further, by returning the secondary electrons to the positively charged sample by the retarding electrode 24, it is possible to neutralize residual charges and avoid problems such as image contrast reduction due to charging.

  FIG. 4 is a diagram showing the position of the gas nozzle 31 and the state of voltage application to the electrodes 18 and 24 when performing high-resolution observation.

  When performing high-resolution observation, as in the case of low-resolution observation, while holding the gas nozzle 31 at a position retracted from the sample 30, the booster electrode voltage control power source 21 applies a positive voltage (for example, to the booster electrode 18). 3 kV), a negative voltage (for example, −1 kV) is applied to the retarding electrode 24 by the retarding electrode control power supply 29. As a result, an electron lens is formed by the objective lens 32, and the diameter of the electron beam irradiated onto the sample 30 by this lens is reduced, so that the beam resolution can be improved. Further, when the electron lens is formed, the ratio (yield) at which the secondary electrons and the reflected electrons are detected by the detectors 16 and 20 is improved, so that a high-quality electronic image with a high SN ratio can be obtained.

  FIG. 5 is a diagram showing the position of the gas nozzle 31 and the voltage application state to the electrodes 18 and 24 when performing electron beam deposition.

  When performing electron beam deposition (GAD) with gas treatment, as shown in the figure, an air cylinder 35 is used to position the ejection hole 130 facing the beam irradiation portion on the sample 30 (for example, about 200 μm above the processing point). While the gas nozzle 31 is extended and the reactive gas is ejected, the booster electrode voltage control power source 21 applies a ground voltage to the booster electrode 18 and the retarding electrode control power source 29 applies a negative voltage to the retarding electrode 24 as in the low resolution observation. Is applied (for example, −1 kV). According to the present embodiment, since the gas gun 28 is attached to the objective lens magnetic path 23, the same working distance as when no gas treatment is performed (from the end surface of the lower pole 33 on the sample 30 side to the surface of the sample 30). Gas treatment can be performed at a distance).

  Next, effects of the charged beam apparatus according to the present embodiment will be described.

  As a charged beam apparatus that can use gas processing such as GAD and GAE, a technique of arranging a gas supply unit such as a gas nozzle between an objective lens and a sample is known. This technique will be described with reference to the drawings as a comparative example of the present embodiment.

  FIG. 6 is a diagram showing a configuration around the objective lens of a charged beam apparatus which is a comparative example of the present embodiment. In this figure, a gas gun 228 that supplies a reactive gas to the sample 30 is a member independent of the mirror body 250 of the charged beam device, and a gas nozzle 231 is disposed between the objective lens 232 and the sample 30. Is provided.

  When the gas gun 228 is arranged in this manner, the working distance becomes larger than the case where there is no gas supply unit due to the arrangement, the beam diameter irradiated to the sample 30 becomes larger, and the beam resolution is lowered. . If the beam resolution is reduced in this way, foreign matter and defects that could be detected without gas treatment may not be detected, and the investigation and countermeasure for the cause of the failure may be delayed, leading to a decrease in yield. Further, since the gas nozzle 231 and the like exist between the objective lens 232 (or the retarding electrode 224 and the like) and the sample, a uniform electric field / magnetic field is disturbed, and an astigmatism correction coil or the like for correcting astigmatism may be used. Correction may be insufficient, and beam astigmatism may occur, resulting in a further reduction in beam resolution.

  On the other hand, the charged beam apparatus according to the present embodiment has a gas gun 28 attached to the mirror body 150 having a jet hole 130 for jetting reactive gas toward the charged beam irradiation portion on the sample 30. I have. When the gas gun 28 is mounted in the mirror body 150 in this way, the ejection hole 130 can face the sample 30 through the circular opening formed by the lower pole 33 of the objective lens 32, so that the working distance is increased. The reaction gas can be supplied to the sample 30 without any problem. That is, according to the present embodiment, since the working distance can be reduced even when performing gas processing, it is possible to perform gas processing while suppressing a decrease in beam resolution.

  Further, when the gas gun 28 is made of a non-magnetic material such as a SUS material as described above, it is less likely to disturb the electric field / magnetic field around the objective lens 32, so that a decrease in beam resolution can be suppressed. . Furthermore, if the holes 151 that are the attachment portions of the gas gun 28 are evenly arranged in the circumferential direction with respect to the central axis of the mirror body 150, the symmetry of the electric field and the magnetic field can be maintained, and the deterioration of the beam resolution is further suppressed. can do.

  In the above description, the configuration in which the gas gun 28 is attached to the objective lens magnetic path 23 has been described as an example. However, the location where the gas gun 28 is attached is not limited to this, and the ejection hole 130 is connected to the charged beam on the sample 30. What is necessary is just to attach the gas gun 28 to the mirror body 150 so that it may be made to adjoin to an irradiation part. For this purpose, for example, the gas gun 28 is attached to the upper body 150 of the objective lens 32, the gas nozzle 31 is passed through the opening of the booster electrode 18 from above, and the ejection hole 130 is formed on the charged beam irradiation portion on the sample 30. Some are configured to be close together.

  Moreover, although the case where it applied to review SEM was mentioned in said description, of course, it is applicable also when utilizing SEM, TEM, an ion beam (FIB), etc. other than this. When an ion beam is used, an ion beam can be generated by using a liquid metal ion source such as gallium instead of the electron source 3 in the present embodiment. Other ion beam sources include, for example, group IV liquid metal ion sources such as silicon and germanium that generate non-contaminating ion beams, gas phase field ion sources such as helium and argon, and gas plasmas such as oxygen and argon. There are ion sources.

  Next, the charged beam apparatus which is the 2nd Embodiment of this invention is demonstrated. The main feature of the charged beam apparatus according to the present embodiment is that it includes two mirror bodies (twin columns).

  FIG. 7 is a diagram showing an overall configuration of a charged beam apparatus according to the second embodiment of the present invention.

  The charged beam apparatus shown in the figure has the same configuration as that of the charged beam apparatus described in the first embodiment, and includes an SEM 110 having a gas gun 28 in a lens body, and an ion source 51 that generates an ion beam (see FIG. 8 described later). An ion beam mirror 118 including a reference), a microsampling unit (extraction means) 117 for extracting a microsample 80 (for example, a size of about 10 μm; see FIG. 13) from the sample 30, and a sample chamber 119. A stage 114, a sample holder 113 that is attached to the upper part of the stage 114 and fixes the placed sample 30 with a fixing means (for example, a pin), an ion beam mirror 118 provided on the ion beam mirror 118 side, Separately arranged gas gun 228 and light provided on the SEM 110 side and used when aligning the sample 30 A microscope 111, respectively provided on SEM110 side and the ion beam lens 118 side, and a Z sensor 115 to hold the working distance of the charged particle beam system constant.

  The charged beam apparatus according to the present embodiment also includes a control unit (not shown) that controls the above-described devices and the like as in the first embodiment. For the sake of explanation, the sample 30 in this embodiment is a silicon wafer having a diameter of 300 mm.

  The stage 114 is a five-axis stage that rotates (R) and tilts (T) in addition to movement in three directions of X, Y, and Z. The sample holder 113 on which the sample 30 is placed is placed on the SEM 110 side or an ion beam mirror. Move to 118 side as appropriate.

The sample chamber 119 is connected to an exhaust system (not shown) composed of a turbo molecular pump, a dry pump, a valve, and the like, and has a high vacuum level of about 10 ⁻⁵ Pa without flowing reactive gas. Is retained. Although not particularly shown, the load chamber is adjacent to the sample chamber 119 so as to be interposed between the sample chamber 119 and, for example, when the sample 30 is loaded, the atmospheric transfer robot in the atmospheric transfer unit. The sample 30 is transferred from the FOUP or the like onto the stage 114 that is waiting in the load lock chamber by discharging the atmosphere of the load lock chamber (not shown), and then the stage 114 moves into the sample chamber 119. In addition, what is necessary is just to carry out in the reverse procedure to the above when carrying out the sample 30.

  The optical microscope 111 checks a number of alignment marks on the sample 30 and aligns the sample 30. The Z sensor 115 measures the distance to the processing point on the sample 30 and moves the stage 114 in the vertical direction (Z-axis direction so that the amount of change is canceled even if the height of the surface of the sample 30 changes due to warpage or the like. ) To keep the working distance constant. As a result, occurrence of focus deviation of the charged beam due to wafer warpage or the like is prevented.

  Further, secondary electrons generated from the sample 30 irradiated with the charged beam (electron beam, ion beam) are supplied from a scintillator (not shown) applied to a positive potential (about 10 kV) in the secondary electron detector 16. It is attracted to the electric field and accelerated to light the scintillator. The emitted light enters a photomultiplier tube (both not shown) by a light guide and is converted into an electric signal. The output of the photomultiplier tube is further amplified to change the luminance of the cathode ray tube in the output section. Then, by synchronizing this with the scanning signal of the deflection coil 63, a secondary electron image at the processing point is generated.

  FIG. 8 is a view showing the internal structure of the ion beam mirror 118 in FIG.

  In FIG. 8, an ion beam mirror 118 includes an ion source 51 that generates an ion beam, an extraction electrode (not shown) that extracts the ion beam 66 from the ion source 51, and an anode aperture 53 that determines the diameter of the ion beam 66. And a processing optical system 300 that irradiates the ion beam 66 to a desired position on the sample 30 with a desired diameter by a polarizer 56, a diaphragm 58, an irradiation lens 59, a projection lens 64, and the like.

  As the ion source 51, an ion source that emits a kind of ion beam (non-contaminated ion beam) that does not contaminate the sample (wafer) 30 is preferable. For example, a duoplasmatron ion source that emits an argon ion beam is suitable. Other examples include an inert gas ion source, an oxygen or nitrogen gas ion source, an electron cyclotron resonance plasma source, an inductively coupled plasma source, or a helicon wave plasma source. The ion source 51 was lifted about 30 kV in potential using a insulator 52. The ion source 51 is covered with an ion source cover 54 and is air-insulated by the ion source cover 54.

  The processing optical system 300 includes a mass separator 55 that selects a necessary one (argon ion beam) from the ion beam extracted from the ion source 51, and a polarization that deflects the ion beam to remove neutral particles (metal sputtering, etc.). An aperture 56 for extracting only a necessary portion of the ion beam 66, an irradiation lens 59 for focusing the ion beam 66 focused by the aperture 58, and an aperture projection mask 60 for extracting only the necessary portion of the ion beam 66. The astigmatism correction coil 61 that corrects astigmatism, the alignment coil 62 that corrects the positional deviation of the ion beam 66, the deflection coil 63 that scans the ion beam 66 on the sample 30, and the ions that have passed through the projection mask 60. A projection lens 64 for focusing the beam 66 is provided.

  In order to prevent neutral particles such as metal sputters generated from the inside of the ion source 51 from directly reaching the sample 30, the ion source 51 is inclined, for example, several degrees with respect to the central axis on the downstream side of the mirror body 118. (See FIG. 8). The neutral particles travel straight from the ion source 51 and are irradiated to a damper (not shown). The damper (not shown) is preferably made of silicon, carbon or the like in order to prevent metal contamination due to sputtered particles.

  The electrode application voltage and magnetic flux density intensity of the mass separator 55 are adjusted so that the mass separator 55 selects only the argon ion beam from the ion beam extracted from the ion source 51, and the electrode application of the deflector 56 is performed. The voltage is adjusted so that the ion beam bent by the deflector 56 is irradiated to the sample 30 through the diaphragm 58.

  A gun valve (not shown) that separates the sample chamber 119 and the ion beam 118 is provided. This gun valve (not shown) is used when it is desired to leak only the sample chamber 119 during maintenance or the like. The deflection coil 63 scans the sample 30 with a circular ion beam for observation that has passed through the projection mask 60. Next, the projection mask 60 will be described in detail.

  FIG. 9 is a top view of the projection mask 60, and FIG. 10 is a partially enlarged view thereof.

  In FIG. 9, the projection mask 60 includes a slit hole 71 used when extracting a microsample from the sample 30, and a slit hole 72 having a relatively large vertical / horizontal aspect ratio used when processing a thin film of the sample. A slit hole 73 for deposition and a round hole 74 for observation beam are opened, and only the ion beam that has passed through each hole is condensed by the projection lens 64 and irradiated onto the sample 30. The slit hole 71 for extracting the microsample has a U-shaped slit 71a and a single-character-shaped slit 71b, which are appropriately used when extracting the microsample. Similarly, the round hole 74 also has two types of holes 74a and 74b having different diameters.

  The projection mask 60 can be moved in a direction substantially perpendicular to the ion beam axis (that is, a horizontal direction) by a drive unit (not shown), and the beam shape is changed through the various holes described above. It can be projected onto the sample 30. In this figure, each type of slit hole is provided one by one, but it is also possible to devise a technique for extending the life of the projection mask 60 by providing a plurality of the same type and appropriately using them. The projection mask 60 is preferably made of silicon in order to prevent metal contamination.

  FIG. 10 shows a state in which the projection mask 60 is irradiated with the uncontaminated ion beam 66. As shown in the drawing, the dimension of the micro-sampling extraction slit hole 71a is, for example, about 0.4 × 0.5 mm, and the ion beam 66 is irradiated so as to cover the entire surface of the slit hole 71a. . Thereby, the shape of the ion beam 66 can be made into the same U-shape as the slit hole 71a.

  The ion beam mirror 118 configured as described above has two types of beam modes, ie, a projection mode mainly used for cross-section processing of a sample and an observation mode mainly used for obtaining an electron image of the sample. . Next, the configuration of the processing optical system 300 in each of these modes will be described.

  FIGS. 11A and 11B are diagrams showing two beam modes by the processing optical system 300 in the ion beam mirror 118, where FIG. 11A shows a projection mode and FIG. 11B shows an observation mode.

  In the projection mode shown in FIG. 11A, the irradiation lens 59 is adjusted so as to form an image from the anode aperture 53 at the principal point of the projection lens 64. This adjustment is performed by applying a high voltage to the central lens of the irradiation lens 59 composed of a set of three butler lenses. The projection lens 64 forms an image from the projection mask 60 on the sample 30. The projection lens 64 is also formed of a triplet butler lens, and is used by applying a high voltage only to the central electrode.

  On the other hand, in the observation mode shown in FIG. 11B, the irradiation lens 59 forms an image from the anode aperture 53 once on the upstream side of the projection mask 60, and the image formed by the projection lens 64 is used for the sample 30. The image is formed again on the top. Thereby, the reduction ratio of the image can be reduced to about 1/30 of the projection mode, and a beam having a minimum diameter of about 0.1 to 0.2 μm can be obtained. By scanning this beam on the sample 30 with the deflection coil 63, a secondary electron image having a higher resolution than that in the projection mode can be obtained.

  When observing the surface of the sample 30 in the charged beam apparatus configured as described above, the sample 30 is moved to the SEM 110 side by the stage 114, the sample 30 is irradiated with the electron beam 19 by the SEM 110, and the voltage contrast (VC ) To find the defective part. For example, when the contact portion is observed, if there is a contact failure, the defective portion is observed darkly. This is because, due to the contact failure, the irradiated charge is less likely to flow to the ground, so that the defective portion is positively charged, and the secondary electrons are trapped by the secondary electrons detected by the secondary electron detector 16. This is because the amount decreases.

  Thus, the size of the defect (for example, contact hole) detected by VC is as small as several tens of nanometers. In order to perform more detailed observation, the sample 30 is processed by the ion beam mirror 118 and then the TEM. It is necessary to observe with etc. In order to process with the ion beam mirror 118, it is necessary to mark the sample 30 with a mark of the processing point by GAD using the SEM 110. When performing GAD, a gas gun (not shown) attached to the mirror body of the SEM 110 is used as in the first embodiment. The gas processing method and the like are the same as those described in the first embodiment, and are omitted. However, in this embodiment as well, since the working distance when performing the gas processing can be reduced, the beam resolution can be reduced. Gas treatment can be performed while suppressing the decrease.

  FIG. 12 is a view showing an electronic image 94 of the sample 30 after mark formation by GAD.

  The illustrated electronic image 94 is formed with a defect portion 96 that is observed darker than the surrounding normal contact holes, and a predetermined interval (for example, about several μm) on both sides of the defect portion 96 2. Two marks 97 are provided. The mark 97 has a relatively low acceleration voltage (for example, about 1 kV) for maximizing the deposition rate, and irradiates a mark of several μm square for several minutes by irradiating an electron beam of several tens of pA. It was formed by electron beam irradiation.

  Next, the stage 114 moves the defective portion directly below the uncontaminated ion beam mirror 118. At this time, when the position cannot be aligned with the positional accuracy of the stage 114, the defect portion 96 is searched based on the positional relationship with the SIM image of the mark 97 on the sample 30.

  Subsequently, in the projection mode (see FIG. 11A), the sample 30 is irradiated with the ion beam 66 through the slit hole 71 or the like of the projection mask 60, and the microsample (for example, including the defect portion 96 and the mark 97 from the sample 30). Is formed from the sample 30 by the microsampling probe 48 (see FIG. 13) of the microsampling unit 117 and bonded to the mesh 82 (see FIG. 13).

  FIG. 13 is a view showing the cartridge mechanism 75 arranged on the sample holder 113 (see FIG. 7).

  The illustrated cartridge mechanism unit 75 includes a cartridge 81 having a mesh 82 to which a microsample 80 extracted from the sample 30 is bonded, and a cartridge holder that holds the cartridge 81 so as to advance and retract in the axial direction (the direction of arrow A in the figure). 83 and a gear 84 that transmits rotational power to the cartridge holder 83.

  The micro sample 80 is adhered to the mesh 82 of the cartridge 81 by a deposit. In order to mount the microsample 80 extracted from the sample 30 on the mesh 82 in this manner, the contact portion of the probe 48 with the microsample 80 may be cut by a non-contaminating ion beam.

  The cartridge 81 is detachably attached to the cartridge holder 83, and only the cartridge 81 can be taken out of the apparatus.

  The cartridge holder 83 is rotated 180 degrees in the positive and negative directions as indicated by an arrow B in the figure by a gear 84 rotated by a driving device (not shown: for example, a motor) provided in the sample holder 113. Driven. The cartridge 81 can be held at an angle suitable for processing the microsample 80 by appropriately rotating the cartridge holder 83 with this rotating mechanism. For example, when thin film processing is performed on the microsample 80, adjustment can be made so that the direction of the ion beam emission axis matches the direction of thinning.

  The micro sample probe (probe) 48 is preferably made of silicon, and if it is made of silicon, there is less concern about metal contamination compared to tungsten or the like. Note that the probe 48 may be made of, for example, carbon, germanium, or the like other than silicon.

  FIG. 14 is a diagram illustrating a state in which the microsample 80 mounted on the mesh 82 is thinned for a TEM sample.

  The thinning process is performed in the projection mode shown in FIG. In the projection mode, as described above, it is difficult to obtain a sufficient resolution for designating the region to be thinned. First, the thinning position is determined in the observation mode shown in FIG. It should be noted that the beam in the observation mode and the beam in the projection mode have different optical conditions as described above, and beam position deviation due to axial deviation may occur. In such a case, it is preferable to obtain the amount of deviation in advance by designating the machining position in the observation mode, and to perform thinning by correcting the deviation and designating a processing region to be thinned.

  When thinning the microsample 80, the ion beam is passed through the thinning slit 72 (see FIG. 9) of the projection mask 60 and scanned by the deflection coil 63, and the microsample 80 is moved by the projection lens 64. Direct imaging on top. In order to make the cross section to be thinned into a sharp processed surface, as shown in FIG. 13, the major axis direction (Y direction in FIG. 14) of the slit hole 72 is changed to the major axis direction (Y direction) of the microsample 80. It is good to match. In this way, the closer to the center of the beam, the smaller the aberration such as spherical aberration, and the sharper the processed surface. Such a thinning process is repeated to obtain a microsample 90 that has been thinned.

  By using the microsample 90 thus obtained, a transmission electron image with higher resolution can be obtained. In this case, for example, the cartridge 81 is rotated 90 degrees by the rotation mechanism of the cartridge holder 83 shown in FIG. 13, and a high voltage (about 200 kV) is applied thereto to irradiate and transmit the accelerated electron beam. An electron image can be obtained by detecting the beam with a detector.

  As described above, even in a charged beam apparatus having two mirror bodies according to this embodiment, the same effects as those of the first embodiment can be obtained by attaching a gas gun in the SEM 110. In the above description, the gas gun 228 on the ion beam mirror 118 side is arranged separately from the mirror 118, but the gas gun 228 may be provided in the mirror 118 like the SEM 110. If comprised in this way, also when performing thin film processing etc. of a sample using an ion beam, gas processing can be performed, maintaining a working distance.

  Next, the charged beam apparatus which is the 3rd Embodiment of this invention is demonstrated. The main feature of the charged beam apparatus according to the present embodiment is that the central axes of two mirrors intersect on the sample 30.

  FIG. 15 is a diagram showing an overall configuration of a charged beam apparatus according to the third embodiment of the present invention.

  The charged beam apparatus shown in the figure is configured such that the extension of the central axis of the SEM 110 and the extension of the central axis of the ion beam mirror 118 intersect on the sample 30 fixed to the sample holder 113. In other words, this embodiment can irradiate a charged beam from the SEM 110 and the ion beam mirror 118 without moving the stage 114 as in the second embodiment. The surface can be observed as it is with an electron beam.

  Compared with the second embodiment, the charged beam apparatus configured in this way can arrange a charged beam mirror body, a gas gun, a microsampling unit, and the like in an integrated manner, and a compact apparatus. Although it can be constructed, the working distance is inevitably increased due to the arrangement, and if gas processing is used, it may be difficult to obtain the necessary resolution. However, as in the above-described embodiments, the working distance in which the gas gun erodes can be reduced by providing a gas gun (not shown) in each of the mirror bodies 110 and 118 in this embodiment. Gas treatment can be performed while suppressing a decrease in beam resolution.

  Next, the charged beam apparatus which is the 4th Embodiment of this invention is demonstrated. The charged beam apparatus of the present embodiment is applied to a scanning transmission electron microscope (hereinafter abbreviated as STEM).

  FIG. 16 is a diagram showing a configuration around an objective lens of a charged beam apparatus (STEM) according to a fourth embodiment of the present invention.

  In this figure, the STEM is a bright light that has traveled straight without being scattered or diffracted within the gas nozzle 31 of the gas gun 28 (not shown) attached to the mirror body (not shown), the cartridge 81, and the microsample 90. A BF-STEM detector 126 for detecting a field-STEM (BF-STEM) signal 125 and a DF-STEM detector 128 for detecting a dark field-STEM (DF-STEM) signal 127 scattered and diffracted in the microsample 90. And a secondary electron detector 16.

  A microsample 90 produced in the same manner as in the second embodiment is adhered to the mesh 82, and the cartridge 81 is irradiated with the electron beam 19 substantially perpendicularly to the thinned surface of the microsample 90. So that it is held.

  In the STEM configured as described above, the transmission electron image of the microsample 90 can be obtained by setting the acceleration voltage of the electron beam 19 to a relatively high voltage of several tens of kV. In the BF-STEM image obtained by the BF-STEM detector 126, a transmission image showing the internal structure of the microsample 90 can be observed as in the case of a normal TEM image, and the DF-STEM image obtained by the DF-STEM detector 128 can be observed. Then, it is possible to observe a composition image that provides a contrast reflecting the composition of the microsample 90. It is also possible to obtain a secondary electron image by the secondary electron detector 16 by reducing the acceleration voltage of the electron beam 19. In the STEM configured as described above, the reactive gas is emitted from the gas nozzle 31 of the gas gun 28 and irradiated with the electron beam 19, whereby the microsample 90 is marked by GAD, and re-thinning is performed in the next step. It is a mark for observation and analysis with higher resolution.

  Also in the present embodiment, by irradiating the electron beam while ejecting the reactive gas from the nozzle 31 of the gas gun 28, it is possible to perform marking by GAD while maintaining the working distance.

  In each of the above embodiments, if the gas gun 28 is attached to the objective lens magnetic path 23, gas processing can be performed with a charged beam apparatus having an in-lens type objective lens. Hereinafter, this case will be described.

  FIG. 17 is an enlarged view of the vicinity of the objective lens 32A of the charged beam apparatus having the in-lens type objective lens. In this figure, the gas gun 28 is attached to the objective lens magnetic path 23 via a flange 133 (not shown) as in the first embodiment, and the sample 30A is large enough to be placed in the objective lens. Formed in the objective lens 32A.

  In the conventional technique in which a gas gun is disposed between a mirror of a charged beam device and a sample, it has been impossible to perform gas processing with a charged beam device having an in-lens type objective lens. However, as shown in the figure, when the gas gun 28 is attached to the objective lens magnetic path 23, the reactive gas can be supplied to the sample 30A even in the case of an in-lens type objective lens. Accordingly, gas processing can be performed even with an in-lens type charged beam apparatus capable of high-resolution observation.

The figure which shows the whole structure of the charged beam apparatus which is the 1st Embodiment of this invention. FIG. 3 is an enlarged cross-sectional view showing the vicinity of a gas gun of the charged beam apparatus according to the first embodiment of the present invention. The figure which shows the position of the gas nozzle 31 at the time of performing low resolution observation, and the application state of the voltage to each electrode 18, 24 in the charged beam apparatus which is the 1st Embodiment of this invention. The figure which shows the position of the gas nozzle 31 at the time of performing high-resolution observation, and the application state of the voltage to each electrode 18, 24 in the charged beam apparatus which is the 1st Embodiment of this invention. The charge beam apparatus which is the 1st Embodiment of this invention WHEREIN: The figure which shows the position of the gas nozzle 31 at the time of performing electron beam deposition, and the application state of the voltage to each electrode 18,24. The figure which shows the structure of the objective lens periphery of the charged beam apparatus which is a comparative example of the 1st Embodiment. The figure which shows the whole structure of the charged beam apparatus which is the 2nd Embodiment of this invention. The figure which shows the internal structure of the ion beam mirror body 118 of the charged beam apparatus which is the 2nd Embodiment of this invention. The top view of the projection mask 60 of the charged beam apparatus which is the 2nd Embodiment of this invention. The elements on larger scale of the projection mask 60 of the charged beam apparatus which is the 2nd Embodiment of this invention. The figure which shows the beam mode by the processing optical system 300 in the ion beam mirror body 118 in the charged beam apparatus which is the 2nd Embodiment of this invention. The figure which shows the electronic image 94 of the sample 30 after forming the mark by GAD in the charged beam apparatus which is the 2nd Embodiment of this invention. The figure which shows the cartridge mechanism part 75 of the charged beam apparatus which is the 2nd Embodiment of this invention. The figure which shows a mode that the micro sample 80 is thinned for TEM samples in the charged beam apparatus which is the 2nd Embodiment of this invention. The figure which shows the whole structure of the charged beam apparatus which is the 3rd Embodiment of this invention. The figure which shows the structure of the objective lens periphery of the charged beam apparatus which is the 4th Embodiment of this invention. The enlarged view of the objective lens vicinity of the charged beam apparatus which has an in-lens type objective lens.

Explanation of symbols

1 Control unit (control device)
3 Electron source (charged beam source)
18 Booster electrode 19 Electron beam (charged beam)
23 objective lens magnetic path 24 retarding electrode 26 gas gun controller 28 gas gun 30 sample 31 gas nozzle 32 objective lens 33 lower pole 35 air cylinder (drive device)
38 Adjustment screw 50 Recess 51 Ion source (charged beam generation source)
66 Ion beam (charged beam)
75 Cartridge mechanism 110 Gas gun built-in SEM
117 Micro sampling unit (extraction means)
118 Ion Beam Mirror 130 Ejection Hole 150 Mirror Body 151 Hole

Claims (11)

A charged beam source for generating a charged beam;
An upper pole and a lower pole for forming an electron lens for focusing the charged beam from the charged beam source on the sample;
A gas supply section having a nozzle provided at the tip with a jet hole for jetting reactive gas;
The nozzle is located between the upper pole and the lower pole, and the ejection hole is held so as to be able to advance and retreat in the axial direction of the nozzle with respect to the charged beam irradiation portion on the sample.
The lower pole uses a part of the mirror of the charged beam device as a magnetic path,
The gas supply unit is attached through a hole provided in the mirror body serving as the magnetic path,
The charged beam apparatus further comprising another hole provided in the mirror body so as to be located on the opposite side of the hole with respect to the central axis of the mirror body. The charged beam apparatus according to claim 1.
The charged beam apparatus according to claim 1, wherein a material of the gas supply unit is a non-magnetic material. The charged beam apparatus according to claim 1 or 2,
A charged beam apparatus comprising: a drive device for moving the ejection hole forward and backward with respect to a charged beam irradiation portion on the sample. The charged beam apparatus according to any one of claims 1 to 3,
A charged beam apparatus comprising a control device that performs automatic review and automatic classification of defects in a sample. In the charged beam apparatus according to any one of claims 1 to 4,
A charged beam apparatus comprising: extraction means for extracting a microsample from a sample. The charged beam apparatus according to claim 5.
The charged beam apparatus characterized in that the material of the extraction means is any one of silicon, carbon, and germanium. The charged beam apparatus according to any one of claims 1 to 6,
The charged beam generation source is any one of an inert gas ion source, an oxygen or nitrogen gas ion source, a duoplasmatron ion source, an electron cyclotron resonance plasma source, an inductively coupled plasma source, or a helicon wave plasma source. Characteristic charged beam device. The charged beam apparatus according to any one of claims 1 to 6,
The charged beam generator is a liquid metal ion source that emits a silicon or germanium ion beam or a gas phase field ion source that emits a helium or argon ion beam . Two charged beam sources for generating a charged beam;
Two mirror bodies each having an upper pole and a lower pole for forming an electron lens for focusing the charged beams from the two charged beam generation sources on the sample, respectively, and including the two charged beam generation sources, respectively. When,
A nozzle provided with a nozzle hole provided at the tip for jetting reactive gas toward the charged beam irradiation portion on the sample, and a gas supply unit attached to at least one of the two mirrors; Prepared,
The nozzle according to the gas supply unit is located between the upper pole and the lower pole in the lens body to which the gas supply unit is attached, and the ejection hole with respect to the charged beam irradiation portion on the sample Is held so as to be able to advance and retreat in the axial direction of the nozzle,
The lower pole of the mirror body to which the gas supply unit is attached has a magnetic path as a part of the mirror body,
The mirror body, to which the gas supply unit is attached and serving as the magnetic path, includes a hole to which the gas supply unit is attached, and a hole provided on the opposite side of the hole with respect to the central axis of the mirror body. A charged beam apparatus comprising: a hole. The charged beam device according to claim 9.
One of the two charged beam generation sources is an electron beam generation source, and the other is an ion beam generation source. In a mirror of a charged beam apparatus that irradiates a sample with a charged beam generated by a charged beam generation source,
An upper pole and a lower pole for forming an electron lens for focusing the charged beam from the charged beam source on the sample;
A hole provided in the lower pole,
The hole is for attaching a gas supply unit having a nozzle provided at the tip with a jet hole for jetting reactive gas,
The nozzle is located between the upper pole and the lower pole, and the ejection hole is held so as to be able to advance and retreat in the axial direction of the nozzle with respect to the charged beam irradiation portion on the sample.
The lower pole has a part of the mirror as a magnetic path,
A mirror for a charged beam apparatus, further comprising another hole provided on the opposite side of the hole with respect to the central axis of the mirror.

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