JP2005303165A - Charged particle line exposure device and charged particle line exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle line exposure device which ensures a sharp formed electron beam by reducing a scattering electron occurring near a forming mask and obtains a high quality exposure pattern, and an exposure method using the charged particle line exposure device. <P>SOLUTION: The charged particle line exposure device according to this invention is provided with an absorber of the scattering electron near various kinds of stops where a generation of the scattering electron is frequently seen and the forming mask. And, the sharp formed electron beam is ensured by efficiently absorbing the scattering electron with this absorber. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a charged particle beam exposure apparatus and a charged particle beam exposure method, and particularly to a charged particle beam exposure apparatus and a charge that can ensure a sharp charged particle beam and provide a high-quality exposure pattern. The present invention relates to a particle beam exposure method.

  As a semiconductor device is highly integrated, a charged particle beam exposure method has attracted attention as a means for realizing pattern miniaturization. According to the charged particle beam exposure method, a finer pattern can be formed by performing pattern transfer using a charged particle beam such as an electron beam. Among them, a variable shaping type electron beam exposure apparatus that draws a pattern by changing the cross-sectional shape and size of a charged particle beam is expected as a high-speed drawing apparatus (for example, Patent Document 1).

FIG. 8 is a schematic schematic view showing extracted element parts necessary for explanation of the present application in the variable shaping type electronic exposure apparatus.
The variable shaped electron beam exposure apparatus 800 is provided with an electron source 802 that emits an electron beam in a vacuum column 801. Hereinafter, along the optical path of the electron beam 803, a blanking control plate 804, a blanking diaphragm 805, A first shaping mask 806, a shaping deflector 807, a second shaping mask 808, and an objective aperture 809 are provided, and below that, a stage 811 for fixing the wafer W in the sample chamber 810 is provided.

The electron beam 803 emitted from the electron source 802 is deflected by a blanking control plate 804 that is turned on / off in response to a signal from an exposure control system (not shown) in order to prevent irradiation of a region not irradiated with the electron beam. The blanking stop 805 blocks the irradiation of unnecessary areas.
The electron beam 803 having a circular cross section passes through the first shaping mask 806 and the second shaping mask 808 having rectangular openings, so that the shaping deflector 807 has the lower left corner of the opening of the second shaping mask 808 on the XY plane. As a reference, the aperture projection position of the first molding mask 806 is arbitrarily changed in the XY direction to be molded into a desired rectangular cross-sectional shape.
The objective aperture 809 blocks scattered electrons of the electron beam 803 shaped in a rectangular cross section, and forms an electron beam having a high contrast value.
The electron beam thus formed is controlled and exposed to transfer a high-level circuit pattern onto the wafer W fixed on the stage 811 in the sample chamber 810.

  The electron beam has a spatial spread as an electron beam bundle. That is, it includes a reference electron beam bundle including aberrations passing along the optical axis, and a blur component caused by electrons scattered by various apertures, molding masks, and side walls provided on the optical path of the electron beam. , Composed of.

FIG. 9 is a schematic diagram showing the states of the apertures 805 and 809 shown in FIG. 8 and the electron beam bundle and scattered electrons in the vicinity of the forming masks 806 and 808. FIG. 9A is a cross-sectional view of the pattern forming portion of the second shaping mask 808, and FIG.
FIG. 9A shows an objective aperture 809 made of molybdenum (Mo) having a thickness of about 500 nanometers. On the main surface of the objective aperture 809, scattered electrons 901 scattered on the aperture surface are generated. Here, the scattered electrons include secondary electrons and the like, but collectively refer to electron beams with low energy off the optical axis and reflected electrons from the side wall in the passage. Further, on the back surface of the objective aperture 809, an electron beam bundle having a low energy passing through the aperture 902 of the aperture and having a low energy and scattered electrons 903 from the side wall of the passage are generated.
FIG. 9B shows a pattern forming portion of the second molding mask 808 made of a material such as silicon (Si) or diamond like carbon (DLC) and having a thin thickness of 2 micrometers or less. That is, the mask 808 has a pattern forming portion having a thickness of about 20 micrometers, for example, and a pattern reinforcing portion surrounding the periphery thereof, for example, having a thickness of about 750 micrometers. FIG. 9B shows a cross section of the pattern forming portion.
Similar to FIG. 9A, scattered electrons 904 are generated on the main surface of the second shaping mask 808. In addition to the scattered electrons 905 from the side wall of the passage, scattered electrons 906 having high energy and penetrating the mask are generated on the back surface of the second shaping mask 808 as in FIG. 9A.

Scattered electrons due to various causes shown in FIG. 9 are exposed in various ways onto the wafer to be exposed below. Thereby, the desired exposure pattern is adversely affected by quality degradation such as blurring and distortion.
Further, in a molded mask formed of a thin film, the mask undergoes thermal expansion due to a temperature rise due to the collision energy of scattered electrons, which causes a problem such as distortion of the mask itself. Furthermore, since many electron beams are irradiated around the small holes, a lot of dark contamination (beam-induced specimen contamination) occurs in a wide area around the opening 907, and the mask adsorption greatly affects the exposure performance. Affect.
JP-A-8-274007

As described above, in the charged particle beam exposure apparatus, scattered electrons are generated in the vicinity of various apertures and a molding mask provided on the optical path of the beam, and these scattered electrons are a cause of lowering the exposure performance. .
The present invention has been made on the basis of recognition of such a problem, and the object thereof is to charge particles that can secure a sharp electron beam and obtain a high-quality exposure pattern by reducing scattered electrons. An object of the present invention is to provide a line exposure apparatus and a charged particle beam exposure method.

  In the charged particle beam exposure apparatus of the present invention, an absorber of scattered electrons is installed in the vicinity of various diaphragms and molding masks where the generation of scattered electrons is most frequently observed. That is, scattered electrons are efficiently absorbed by this absorber, and a sharp electron beam is ensured.

That is, according to the present invention, the charged particle beam is formed into a desired shape by passing it through a mask on which a pattern is formed, and charged to transfer the desired pattern by irradiating the wafer on which a resist has been applied in advance. A particle beam exposure apparatus comprising:
A lens for focusing and imaging the charged particle beam;
A diaphragm provided on the optical path of the charged particle beam, blocking an unnecessary region of the charged particle beam and passing only the necessary region;
A molding mask provided on an optical path of the charged particle beam and formed into a desired shape by passing the charged particle beam;
An optical deflector provided on an optical path of the charged particle beam and performing deflection control of the charged particle beam;
A stage for holding the wafer;
Provided on the optical path of the charged particle beam before at least one of the diaphragm and the shaping mask, and absorbs at least one of reflected charged particles and scattered charged particles generated at the at least one of the diaphragm and the shaping mask. An absorption diaphragm,
There is provided a charged particle beam exposure apparatus comprising:

  Here, on the optical path of the charged particle beam, at least one of the charged particles that are provided at the rear stage of at least one of the diaphragm and the molding mask and have passed through the at least one of the diaphragm and the molding mask provided at the former stage. It may be further provided with an absorption diaphragm for absorbing the portion.

Or according to the invention,
A charged particle source that emits a charged particle beam;
A blanking control plate for controlling deflection of the charged particle beam;
A blanking diaphragm that blocks unnecessary regions of the charged particle beam deflected by the blanking control plate and passes only necessary regions;
A first shaping mask for shaping the charged particle beam that has passed through the blanking diaphragm into a desired shape;
A transfer lens that converges and forms an image of the charged particle beam that has passed through the first shaping mask;
A shaping deflector that deflects the charged particle beam that has passed through the transfer lens by an electric field;
A second shaping mask for shaping the charged particle beam deflected by the shaping deflector into a desired shape;
A reduction lens that converges, reduces, and images the charged particle beam that has passed through the second shaping mask;
An objective aperture that blocks unnecessary areas of the charged particle beam that has passed through the reduction lens; and
An objective lens that converges and forms an image of the charged particle beam that has passed through the objective aperture;
A projection deflector for deflecting a charged particle beam converged and imaged by the objective lens;
A stage on which a wafer irradiated with the charged particle beam deflected by the projection deflector is fixed;
Provided at the front stage of at least one of the blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm, and absorbs at least one of reflected charged particles and scattered charged particles generated in the at least one of them. , Absorption diaphragm,
There is provided a charged particle beam exposure apparatus comprising:

  Here, the blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm are provided at the subsequent stage, and the blanking diaphragm, the first molding mask, and the second molding mask provided at the preceding stage. Further, an absorption diaphragm for absorbing at least a part of the charged particles that have passed through at least one of the objective diaphragms may be further provided.

  Here, the absorption diaphragm is formed of a nonmagnetic material having a scattering coefficient of the charged particles smaller than that of at least one of the blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm. It can be.

  Further, carbon, beryllium, or a composite material thereof may be used as the material of the absorption diaphragm.

On the other hand, according to the present invention, a charged particle beam emitted from a charged particle source is formed into a desired shape by passing it through a mask on which a pattern is formed, and is irradiated onto a wafer coated with a resist in advance. A charged particle beam exposure method for transferring a desired pattern,
Deflection control of the charged particle beam by a blanking control plate;
The charged particle beam whose deflection is controlled by the blanking control plate is blocked by a blanking diaphragm so that an unnecessary region is blocked and only a necessary region is allowed to pass.
Forming a charged particle beam having passed through the blanking diaphragm into a desired shape with a first shaping mask;
The charged particle beam formed by the first shaping mask is converged and imaged by a transfer lens;
A deflection control of a charged particle beam converged and imaged by the transfer lens by a shaping deflector;
Forming a charged particle beam whose deflection is controlled by the shaping deflector into a desired shape with a second shaping mask;
Converging, reducing, and resolving the charged particle beam formed by the second shaping mask with a reduction lens;
The charged particle beam converged, reduced, and imaged by the reducing lens is blocked by an objective aperture to block unnecessary regions and pass only necessary regions;
Irradiating the charged particle beam passing through the objective aperture onto the wafer, which is deflected by a projection deflector and fixed on the stage;
The blanking diaphragm, the first molding mask, the second molding mask, and the absorption diaphragm provided at the front stage of at least one of the objective diaphragms, the blanking diaphragm, the first molding mask, Absorbing reflected charged particles and scattered charged particles generated in at least one of the shaping mask and the objective aperture;
There is provided a charged particle beam exposure method comprising:

  Here, the blanking diaphragm, the first molding mask, the second molding mask, and the absorption diaphragm provided at the subsequent stage of at least one of the objective diaphragms, the blanking diaphragm, the first diaphragm, which is provided at the preceding stage. The method may further include a step of absorbing at least a part of the charged particles that have passed through at least one of the shaping mask, the second shaping mask, and the objective aperture.

  Here, the installation position of the absorption diaphragm can be adjusted based on the state of contamination adsorbed to at least one of the blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm. .

  Alternatively, the electron detector provided on the stage detects secondary electrons from the wafer, observes the state of blur, and adjusts the installation position of the absorption diaphragm based on the result. Can do.

  According to the present invention, various apertures that generate a large amount of scattered electrons, and an absorption aperture that absorbs scattered electrons in the vicinity of the molding mask are installed to absorb scattered electrons that cause a reduction in exposure performance and to have a sharp shape. Get an electron beam. For this reason, exposure performance is improved, contamination of various apertures and molding masks can be reduced, and the life of these replacement cycles can be extended.

FIG. 1 is a schematic diagram showing an outline of a charged particle beam exposure apparatus according to a first embodiment of the present invention.
In the charged particle beam exposure apparatus 100 of the present invention, the electron beam 102 emitted from the electron source 101 is moved along the optical path of the electron beam along the blanking control plate 104, the absorption stop 105, the blanking stop 106, the absorption stop 107, The stage 118 passes through the first molding mask 108, the transfer lens 109, the shaping deflector 110, the absorption diaphragm 111, the second shaping mask 112, the reduction lens 113, the absorption diaphragm 114, the objective diaphragm 115, the objective lens 116, and the projection deflector 117. Irradiated to a wafer W fixed to the substrate. In these processes, the electron beam is formed into a desired shape.

  The electron beam 102 emitted from the electron source 101 is uniformly irradiated onto the first shaping mask 108. The electron beam is deflected by applying a deflection voltage to the blanking control plate 104 so that a desired spot on the first shaping mask 108 is irradiated, and unnecessary portions are blocked by the blanking diaphragm 106. At this time, the scattered electrons described above are generated in the vicinity of the blanking stop. Scattered electrons are absorbed by the absorption diaphragm 105 installed in front of the blanking diaphragm 106. The detailed description of the absorption stop 105 will be described later, and the description of the entire exposure apparatus will be continued.

  The electron beam 102 that has passed through the blanking stop 105 is formed into a rectangular shape by passing through the first shaping mask 108, converged and deflected by the transfer lens 109 and the shaping deflector 110, and is coupled onto the second shaping mask 112. Imaged. By shifting the irradiation position of the electron beam 102 with respect to the opening of the second shaping mask 112, the electron beam 102 that has passed through the second shaping mask is shaped into a rectangle of an arbitrary size. At this time, scattered electrons generated in the vicinity of the first shaping mask 108 and the second shaping mask 112 are absorbed by the absorption apertures 107 and 111 provided in front of the respective masks.

  The electron beam 102 that has passed through the second shaping mask 112 is converged and reduced by the reduction lens 113, an unnecessary portion is blocked by the objective aperture 115, and then on the wafer W fixed on the stage 118 by the objective lens 116. Imaged. The electron beam is deflected by applying a deflection voltage to the projection deflector 117 and irradiated to a desired position on the wafer. At this time, scattered electrons generated in the vicinity of the objective aperture 115 are absorbed by the absorption aperture 114 provided in the preceding stage.

FIG. 2 is a schematic schematic diagram that extracts and expresses element portions necessary for explanation in order to make the configuration of the present application easier to understand in comparison with FIG. 6. The reference numerals are the same as those in FIG.
The newly provided absorption stops 105, 107, 111, and 114 will be described below. Although these have different installation locations, the effect of reducing scattered electrons is the same, and therefore, here, the absorption diaphragm 114 will be described as an example.

FIG. 3 is a schematic diagram of the objective aperture 115 and the absorption aperture 114 provided in the preceding stage.
As a material of the absorption diaphragm 114, carbon (C) or beryllium (Be) having a small electron scattering coefficient, or a composite material thereof is used. In FIG. 2, taking the case of a circular shape as an example, the size of each part is as follows: the objective aperture 115 is made of molybdenum (Mo), the thickness is about 10 micrometers, and the thickness of the absorption aperture 114 is about 1 millimeter. The diameters of the openings are about 1.5 mm for the objective diaphragm 115 and about 2.5 mm for the absorption diaphragm 114. The central aperture 301 of the absorption stop 114 is larger than the opening 302 of the objective stop 115 and is set so as not to block the passage of the electron beam 102 that contributes to exposure.

4 is a cross-sectional view of the objective diaphragm and the absorption diaphragm shown in FIG.
The absorption diaphragm 114 absorbs scattered electrons 401 from above the optical path on its main surface, and scattered electrons 402 reflected on the surface of the objective diaphragm 115 through the central opening 301 of the absorption diaphragm 114 on the back surface. By installing the absorption stop 114, the electron beam 102 passing through the aperture 302 of the objective stop 115 is only a few scattered electrons 403 other than the desired beam. In this way, by setting the absorption / absorption diaphragm in front of the objective diaphragm, scattered electrons can be reduced and a sharp electron beam can be obtained. As a matter of course, the same effect can be seen for the other absorption diaphragms 105, 107, and 111.

  So far, the absorption diaphragm has been described as being provided in the front stage of various diaphragms and the molding mask. However, as a second embodiment of the present invention, a case in which it is provided in the subsequent stage will be described below. FIG. 5 is a schematic schematic diagram showing the configuration of the present embodiment extracted by extracting portions necessary for explanation. The same components as those in FIG. 2 are denoted by the same reference numerals. Compared with FIG. 2, absorption diaphragms 501, 502, 503, and 504 are newly added after the blanking diaphragm 106, the first molding mask 108, the second molding mask 112, and the objective diaphragm 115, respectively. Provided.

FIG. 6 is a cross-sectional view of the objective aperture 115 and the absorption apertures 114 and 504 provided at the front and rear stages thereof.
In the same way as in the first embodiment, the absorption stop 114 is scattered by the main surface of the scattered electrons 401 from above the optical path, and on the back side through the central aperture 301 of the absorption stop 114 and reflected by the surface of the objective stop 115. Absorbs electrons 402. On the other hand, the absorption stop 504 absorbs scattered electrons 403 passing through the opening 302 of the objective stop 115 downward. By installing an additional absorption stop 504 in addition to the absorption stop 114, the electron beam 102 passing through the opening 601 of the subsequent absorption stop 504 is only a few scattered electrons 602 other than the desired beam. Become. As described above, by installing the absorption diaphragm at the subsequent stage of the objective diaphragm, it is possible to further reduce the scattered electrons as compared with the case where the absorption diaphragm is disposed only at the previous stage. The same effect can be seen with the absorption diaphragm 501.

FIG. 7 is a cross-sectional view of the second shaping mask 112 and the absorption diaphragms 111 and 503 provided at the front and rear stages thereof.
As in the case of 114 provided in front of the objective aperture 115 in FIG. 6, the absorption stop 111 passes through the central opening 702 of the absorption stop 111 on the main surface and scattered electrons 701 from the upper surface of the main surface, and the second shaping mask. The scattered electrons 703 reflected by the surface 112 are absorbed. On the other hand, the absorption diaphragm 503 absorbs scattered electrons 705 that pass downward through the opening 704 of the second shaping mask 112 and scattered electrons 706 that penetrate the second shaping mask 112. By installing the absorption stop 503 in addition to the absorption stop 111, the electron beam 102 passing through the opening 707 of the subsequent absorption stop 503 has only a few scattered electrons 708 other than the desired beam. Become. In the case of a molding mask formed of a thin film, scattered electrons penetrating the mask are also generated. Therefore, the effect of reducing scattered electrons can be further reduced by installing an absorption diaphragm for absorbing these scattered electrons in the subsequent stage of the molding mask. growing. The same effect can be seen for the absorption diaphragm 502.

  The absorption diaphragm that has been described so far is mounted in an independent holder or in a system that is incorporated in the same holder as the various diaphragms and the molding mask. These absorption restrictors are provided in the vacuum column 120 shown in FIG. 1 through respective holders.

  If scattered electrons are absorbed more effectively, the position of the absorption diaphragm may be adjusted according to the electron source, mask, and the like. For example, it is possible to adjust the installation position by observing the state of contamination occurring around the opening of the molding mask. Further, the beam blur may be calculated using the sensor 119 provided above the stage 118, and the installation position may be adjusted according to the result.

  As described above, by using the charged particle beam exposure apparatus of the present invention, it is possible to eliminate blur caused by scattered electrons and form a sharp electron beam, and the exposure performance is improved. Further, by suppressing the contamination generated on the mask, it is possible to extend the use cycle of various apertures and masks, thereby reducing the cost.

It is a schematic diagram showing the outline of the charged particle beam exposure apparatus concerning the 1st Embodiment of this invention. FIG. 2 is a schematic schematic view showing extracted element parts of the charged particle beam exposure apparatus according to the first embodiment of the present invention. It is a schematic diagram of an objective stop and an absorption stop provided in the preceding stage. FIG. 4 is a cross-sectional view of the objective aperture and the absorption aperture shown in FIG. 3. It is the schematic schematic which extracted and expressed the element part of the charged particle beam exposure apparatus concerning the 2nd Embodiment of this invention. It is sectional drawing of the objective aperture stop and the absorption aperture stop provided in the back-and-front stage. It is sectional drawing of the absorption aperture diaphragm provided in a 2nd shaping | molding mask and its front-back stage. It is the schematic model which extracted and expressed the element part of the variable shaping type | mold electron beam exposure apparatus. It is a schematic diagram showing the state of an electron beam bundle and scattered electrons in the vicinity of the aperture stop and the shaping mask.

Explanation of symbols

100 charged particle beam exposure apparatus 101, 802 electron source 102, 803 electron beam 104, 804 blanking control plate 105, 107, 111, 114, 501, 502, 503, 504 absorption diaphragm 106, 805 blanking diaphragm 108, 806 1 molding mask 109 transfer lens 110, 807 molding deflector 112, 808 second molding mask 113 reduction lens 115, 809 objective stop 116 objective lens 117 projection deflector 118, 811 stage 119 sensor 120, 801 vacuum column 301, 702 central opening 302, 601, 304, 707, 902, 907 Opening 401, 402, 403, 602, 701, 703, 705, 706, 708, 901, 904, 905, 906 Scattered electron 800 Variable shaping electron beam exposure apparatus 810 Sample chamber W Eha

Claims (9)

A charged particle beam exposure apparatus that forms a desired shape by passing a charged particle beam through a mask on which a pattern is formed, and irradiates the wafer with a resist applied in advance to transfer the desired pattern,
A lens for focusing and imaging the charged particle beam;
A diaphragm provided on the optical path of the charged particle beam, blocking an unnecessary region of the charged particle beam and passing only the necessary region;
A molding mask provided on an optical path of the charged particle beam and formed into a desired shape by passing the charged particle beam;
An optical deflector provided on an optical path of the charged particle beam and performing deflection control of the charged particle beam;
A stage for holding the wafer;
Provided on the optical path of the charged particle beam before at least one of the diaphragm and the shaping mask, and absorbs at least one of reflected charged particles and scattered charged particles generated at the at least one of the diaphragm and the shaping mask. An absorption diaphragm,
A charged particle beam exposure apparatus comprising:   Absorbs at least a part of the charged particles that are provided at the subsequent stage of at least one of the diaphragm and the shaping mask on the optical path of the charged particle beam and that have passed through the at least one of the diaphragm and the shaping mask provided at the preceding stage. The charged particle beam exposure apparatus according to claim 1, further comprising an absorption diaphragm for performing the above operation. A charged particle source that emits a charged particle beam;
A blanking control plate for controlling deflection of the charged particle beam;
A blanking diaphragm that blocks unnecessary regions of the charged particle beam deflected by the blanking control plate and passes only necessary regions;
A first shaping mask for shaping the charged particle beam that has passed through the blanking diaphragm into a desired shape;
A transfer lens that converges and forms an image of the charged particle beam that has passed through the first shaping mask;
A shaping deflector that deflects the charged particle beam that has passed through the transfer lens by an electric field;
A second shaping mask for shaping the charged particle beam deflected by the shaping deflector into a desired shape;
A reduction lens that converges, reduces, and images the charged particle beam that has passed through the second shaping mask;
An objective aperture that blocks unnecessary areas of the charged particle beam that has passed through the reduction lens; and
An objective lens that converges and forms an image of the charged particle beam that has passed through the objective aperture;
A projection deflector for deflecting a charged particle beam converged and imaged by the objective lens;
A stage on which a wafer irradiated with the charged particle beam deflected by the projection deflector is fixed;
Provided at the front stage of at least one of the blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm, and absorbs at least one of reflected charged particles and scattered charged particles generated in the at least one of them. , Absorption diaphragm,
A charged particle beam exposure apparatus comprising:   The blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm are provided at the subsequent stage of the blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm. The charged particle beam exposure apparatus according to claim 3, further comprising an absorption diaphragm for absorbing at least a part of the charged particles that have passed through at least one of the above.   The absorption diaphragm is formed of a nonmagnetic material having a scattering coefficient of the charged particles smaller than that of at least one of the blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm. The charged particle beam exposure apparatus according to any one of claims 1 to 4.   The charged particle beam exposure apparatus according to claim 1, wherein carbon, beryllium, or a composite material thereof is used as the material of the absorption diaphragm. A charged particle beam emitted from a charged particle source is passed through a mask on which a pattern has been formed, shaped into a desired shape, and irradiated onto a resist-coated wafer to transfer the desired pattern. A particle beam exposure method comprising:
Deflection control of the charged particle beam by a blanking control plate;
The charged particle beam whose deflection is controlled by the blanking control plate is blocked by a blanking diaphragm and unnecessary regions are blocked and only necessary regions are passed through,
Forming a charged particle beam having passed through the blanking diaphragm into a desired shape with a first shaping mask;
The charged particle beam formed by the first shaping mask is converged and imaged by a transfer lens;
A deflection control of a charged particle beam converged and imaged by the transfer lens by a shaping deflector;
Forming a charged particle beam whose deflection is controlled by the shaping deflector into a desired shape with a second shaping mask;
Converging, reducing, and resolving the charged particle beam formed by the second shaping mask with a reduction lens;
The charged particle beam converged, reduced, and imaged by the reducing lens is blocked by an objective aperture to block unnecessary regions and pass only necessary regions;
Irradiating the charged particle beam passing through the objective aperture onto the wafer, which is deflected by a projection deflector and fixed on the stage;
The blanking diaphragm, the first molding mask, the second molding mask, and the absorption diaphragm provided at the front stage of at least one of the objective diaphragms, the blanking diaphragm, the first molding mask, Absorbing reflected charged particles and scattered charged particles generated in at least one of the shaping mask and the objective aperture;
A charged particle beam exposure method comprising:   The installation position of the absorption diaphragm is adjusted based on the state of contamination adsorbed to the at least one of the blanking diaphragm, the first molding mask, the second molding mask, and the objective diaphragm. Charged particle beam exposure method.   The electron detector provided on the stage detects secondary electrons from the wafer, observes the state of blur, and adjusts the installation position of the absorption diaphragm based on the result. Item 8. The charged particle beam exposure method according to Item 7.

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