JP2007109855A - Insulating structure of semiconductor module - Google Patents

Insulating structure of semiconductor module Download PDF

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JP2007109855A
JP2007109855A JP2005298758A JP2005298758A JP2007109855A JP 2007109855 A JP2007109855 A JP 2007109855A JP 2005298758 A JP2005298758 A JP 2005298758A JP 2005298758 A JP2005298758 A JP 2005298758A JP 2007109855 A JP2007109855 A JP 2007109855A
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semiconductor module
contact surface
insulating material
insulating
outer periphery
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JP4604954B2 (en
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Hiroaki Arai
裕明 新井
Takahiro Ogawa
貴弘 小川
Mitsuharu Inagaki
充晴 稲垣
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an insulating structure of a semiconductor module which can prevent the breakage of an insulating material and sufficiently prevent deterioration in electric insulating performance. <P>SOLUTION: The insulating structure is formed by pressure-bonding a semiconductor module 1 having a built-in semiconductor element 11, an insulating material 2 arranged on the semiconductor module 1 in contact with it and a conductive structure (cooler 3) arranged on the insulating material 2 in contact with it so that the insulating material 2 is sandwiched between the structure and the semiconductor module 1. One of an abutting surface of the semiconductor module 1 and an abutting surface of the conductive structure which are oppositely arranged with the insulating material 2 sandwiched is a deformation-retardant abutting surface 15 formed of a material having a smaller deformation quantity for a predetermined load than that of the other, and the other is a abutting surface 35 easy in deformation formed of a material having a larger deformation quantity for the predetermined load than that of the abutting surface 15. At least one part of the external periphery 151 of the abutting surface 15 is arranged on the outside rather than the external periphery 351 of the abutting surface 35. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体素子を内蔵した半導体モジュールと、絶縁材と、導電性構造体とを加圧密着してなる半導体モジュールの絶縁構造に関する。   The present invention relates to an insulating structure of a semiconductor module in which a semiconductor module incorporating a semiconductor element, an insulating material, and a conductive structure are pressed and adhered.

従来より、図１２、図１３に示すごとく、半導体素子９１を内蔵した半導体モジュール９に冷却器７を加圧密着させて、半導体モジュール９を冷却する構造がある（特許文献１参照）。この場合、半導体モジュール９の表面に露出した放熱板９５０と冷却器７との間に、セラミック等からなる絶縁材８を配置して、両者の間の電気的絶縁性を確保している。   Conventionally, as shown in FIG. 12 and FIG. 13, there is a structure in which the cooler 7 is pressed and adhered to the semiconductor module 9 including the semiconductor element 91 to cool the semiconductor module 9 (see Patent Document 1). In this case, an insulating material 8 made of ceramic or the like is disposed between the heat sink 950 exposed on the surface of the semiconductor module 9 and the cooler 7 to ensure electrical insulation between the two.

しかし、例えば、上記放熱板９５０が銅からなり、冷却器７がアルミからなる場合、上記絶縁材８を挟んで放熱板９５０と冷却器７とが加圧されると、所定の荷重に対する変形量が大きい方である冷却器７が変形することがある。このとき、絶縁材８が冷却器７の変形に追従して変形しようとする曲げの力が働き、絶縁材８にクラックが入ったり破損したりするおそれがある。これにより、半導体モジュール９と冷却器７との間の電気的絶縁性を確保することが困難となるおそれがある。   However, for example, when the heat sink 950 is made of copper and the cooler 7 is made of aluminum, if the heat sink 950 and the cooler 7 are pressed with the insulating material 8 interposed therebetween, the amount of deformation with respect to a predetermined load is increased. The cooler 7 having a larger value may be deformed. At this time, the bending force that the insulating material 8 tends to deform following the deformation of the cooler 7 acts, and the insulating material 8 may be cracked or damaged. This may make it difficult to ensure electrical insulation between the semiconductor module 9 and the cooler 7.

上記の冷却器７の変形は、図１２、図１３に示すごとく、所定の荷重に対する変形量が小さい方である放熱板９５０の外周９５１が所定の荷重に対する変形量が大きい方である冷却器７の表面に当接することにより、この当接部分に応力が集中して生じる。即ち、冷却器７よりも半導体モジュール９の放熱板９５０の方が、所定の荷重に対する変形量が小さい場合において、放熱板９５０の外周９５１が冷却器７の当接面の外周７５１よりも内側にあると、上記の変形が生じやすくなる。   The deformation of the cooler 7 is as shown in FIGS. 12 and 13, in which the outer periphery 951 of the heat sink 950, which has a smaller deformation amount with respect to a predetermined load, has a larger deformation amount with respect to the predetermined load. As a result, the stress concentrates on the contact portion. That is, in the case where the heat sink 950 of the semiconductor module 9 has a smaller deformation amount with respect to a predetermined load than the cooler 7, the outer periphery 951 of the heat sink 950 is inward of the outer periphery 751 of the contact surface of the cooler 7. If it exists, the above deformation is likely to occur.

特開２００１−３２０００５号公報JP 2001-320005 A

本発明は、かかる従来の問題点に鑑みてなされたもので、絶縁材の破損を防ぎ、電気的絶縁性の低下を充分に防ぐことができる半導体モジュールの絶縁構造を提供しようとするものである。   The present invention has been made in view of such conventional problems, and an object of the present invention is to provide an insulating structure of a semiconductor module that can prevent damage to an insulating material and sufficiently prevent a decrease in electrical insulation. .

本発明は、半導体素子を内蔵した半導体モジュールと、該半導体モジュールに接触配置した絶縁材と、上記半導体モジュールとの間に上記絶縁材を挟むように該絶縁材に接触配置した導電性構造体とが、互いに加圧密着してなり、
上記絶縁材を挟んで対向配置された上記半導体モジュールの当接面と、上記導電性構造体の当接面とのうち、いずれか一方は他方よりも所定の荷重に対する変形量が小さい材料からなる難変形当接面であり、他方は該難変形当接面よりも所定の荷重に対する変形量が大きい材料からなる易変形当接面であり、
上記難変形当接面の外周の少なくとも一部は、上記易変形当接面の外周よりも外側に配されていることを特徴とする半導体モジュールの絶縁構造にある（請求項１）。 The present invention relates to a semiconductor module incorporating a semiconductor element, an insulating material disposed in contact with the semiconductor module, and a conductive structure disposed in contact with the insulating material so as to sandwich the insulating material between the semiconductor module. Are in close contact with each other,
One of the contact surface of the semiconductor module and the contact surface of the conductive structure, which are arranged to face each other with the insulating material interposed therebetween, is made of a material having a smaller deformation amount with respect to a predetermined load than the other. It is a hard deformation contact surface, the other is a hard deformation contact surface made of a material having a larger deformation amount with respect to a predetermined load than the hard deformation contact surface,
At least a part of the outer periphery of the hard-to-deform contact surface is arranged outside the outer periphery of the easy-to-deform contact surface.

次に、本発明の作用効果につき説明する。
上記難変形当接面の外周の少なくとも一部は、上記易変形当接面の外周よりも外側に配されている。そのため、少なくとも、易変形当接面の外周よりも難変形当接面の外周が外側に配された部分においては、応力の集中を防ぎ、易変形当接面の変形を防ぐことができる。それ故、絶縁材に曲げの力が働くことを防止し、絶縁材の破損を防ぐことができる。その結果、半導体モジュールと導電性構造体との間における電気的絶縁性の低下を防ぐことができる。 Next, the effects of the present invention will be described.
At least a part of the outer periphery of the hardly deforming contact surface is arranged outside the outer periphery of the easily deformable contact surface. Therefore, at least in the portion where the outer periphery of the hard deformation contact surface is arranged outside the outer periphery of the easy deformation contact surface, stress concentration can be prevented and deformation of the easy deformation contact surface can be prevented. Therefore, it is possible to prevent a bending force from acting on the insulating material and to prevent the insulating material from being damaged. As a result, it is possible to prevent a decrease in electrical insulation between the semiconductor module and the conductive structure.

以上のごとく、本発明によれば、絶縁材の破損を防ぎ、電気的絶縁性の低下を充分に防ぐことができる半導体モジュールの絶縁構造を提供することができる。   As described above, according to the present invention, it is possible to provide an insulating structure for a semiconductor module that can prevent damage to an insulating material and sufficiently prevent a decrease in electrical insulation.

本発明において、上記半導体モジュールとしては、例えば、ＭＯＳ型ＦＥＴ素子、ＩＧＢＴ素子、ダイオード、トランジスタ、サイリスタ、パワー集積回路等の半導体素子を内蔵したものがある。
また、上記絶縁材としては、例えば熱伝導性に優れたセラミック板等を用いることができる。また、絶縁材の厚みは、例えば、０．１〜１．０ｍｍとすることができる。
また、上記導電性構造体としては、例えば、後述する冷却器の他、ヒートシンク、ケース、他の電子部品等がある。
また、上記難変形当接面の外周及び上記易変形当接面の外周は、例えば、矩形等の多角形、或いは、円形、楕円形、その他種々の形状とすることができる。 In the present invention, examples of the semiconductor module include those incorporating semiconductor elements such as MOS FET elements, IGBT elements, diodes, transistors, thyristors, and power integrated circuits.
As the insulating material, for example, a ceramic plate having excellent thermal conductivity can be used. Moreover, the thickness of an insulating material can be 0.1-1.0 mm, for example.
Examples of the conductive structure include a heat sink, a case, and other electronic components in addition to a cooler described later.
Moreover, the outer periphery of the said hard deformation contact surface and the outer periphery of the said easy deformation contact surface can be made into polygons, such as a rectangle, circular, an ellipse, and other various shapes, for example.

また、上記難変形当接面の全ての角部は、上記易変形当接面の外周よりも外側に配されていることが好ましい（請求項２）。
この場合には、絶縁材の破損をより効果的に防ぐことができる。
上記難変形当接面の外周の中でも特に角部が易変形当接面の表面に当接すると、この角部において応力が特に集中しやすく、易変形当接面が変形し、絶縁材破損の原因となりやすい。そこで、難変形当接面における全ての角部を易変形当接面の外周の外側に配することにより、絶縁材の破損を効果的に防ぐことができる。 Moreover, it is preferable that all the corners of the hardly deformable contact surface are arranged outside the outer periphery of the easily deformable contact surface.
In this case, damage to the insulating material can be prevented more effectively.
When the corner portion contacts the surface of the easily deformable contact surface, particularly in the outer periphery of the hard deformable contact surface, stress is particularly concentrated at the corner portion, the easily deformable contact surface is deformed, and the insulating material is damaged. Prone to cause. Therefore, by disposing all the corners on the hardly deformable contact surface outside the outer periphery of the easily deformable contact surface, it is possible to effectively prevent damage to the insulating material.

また、上記難変形当接面の全外周は、上記易変形当接面の外周よりも外側に配されていることが好ましい（請求項３）。
この場合には、難変形当接面と易変形当接面との当接構造において応力が集中する部分を無くすことができるため、絶縁材の破損を一層効果的に防ぐことができる。 Moreover, it is preferable that the whole outer periphery of the said hard deformation contact surface is distribute | arranged outside the outer periphery of the said easy deformation contact surface (Claim 3).
In this case, since the portion where the stress is concentrated in the contact structure between the hardly deformable contact surface and the easily deformable contact surface can be eliminated, the breakage of the insulating material can be more effectively prevented.

また、上記導電性構造体は、上記半導体モジュールを冷却する冷却器であることが好ましい（請求項４）。
この場合には、半導体モジュールを効率的に冷却することができると共に、半導体モジュールと冷却器との間の電気的絶縁性を確保することができる。
即ち、半導体モジュールの発熱を冷却器へ充分に放熱するためには、半導体モジュールと冷却器とを充分に加圧密着させる必要がある。そうすると、半導体モジュールと冷却器との間の絶縁材には大きな加圧力がかかることとなる。そこで、本発明を適用して応力集中を緩和することにより、半導体モジュールと冷却器との間に全体として大きな加圧力をかけたとしても、絶縁材の破損を効果的に防ぎ、電気的絶縁性を確保することができる。
このように、半導体モジュールの冷却効率の確保と電気的絶縁性の低下の防止との両立を図ることができる。 The conductive structure is preferably a cooler for cooling the semiconductor module.
In this case, the semiconductor module can be efficiently cooled, and electrical insulation between the semiconductor module and the cooler can be ensured.
That is, in order to sufficiently dissipate the heat generated in the semiconductor module to the cooler, it is necessary to sufficiently press-contact the semiconductor module and the cooler. If it does so, a big pressurization force will be applied to the insulating material between a semiconductor module and a cooler. Therefore, by applying the present invention to alleviate the stress concentration, even if a large pressure is applied between the semiconductor module and the cooler as a whole, the insulation material is effectively prevented from being damaged and electrically insulated. Can be secured.
Thus, it is possible to achieve both of ensuring the cooling efficiency of the semiconductor module and preventing the deterioration of the electrical insulation.

また、上記半導体モジュールが上記難変形当接面を有し、上記導電性構造体が上記易変形当接面を有することとすることができる（請求項５）。
この場合には、導電性構造体である冷却器の易変形当接面が変形することを防いで、絶縁材の破損を防ぐことができる。 The semiconductor module may have the hardly deformable contact surface, and the conductive structure may have the easily deformable contact surface.
In this case, the easily deformable contact surface of the cooler, which is a conductive structure, can be prevented from being deformed, and damage to the insulating material can be prevented.

また、上記導電性構造体は、内部に冷却媒体を流通させる冷媒流路を形成してなり、該冷媒流路の形成方向と直交する方向について、上記半導体モジュールの上記難変形当接面の外周が、上記導電性構造体の上記易変形当接面よりも外側に配されていることとすることができる（請求項６）。
この場合には、半導体モジュールの冷却効率を向上させることができると共に、半導体モジュールと導電性構造体との配置を容易に行うことができる。 Further, the conductive structure is formed with a coolant channel through which a cooling medium flows, and an outer periphery of the hardly deformable contact surface of the semiconductor module in a direction orthogonal to the direction in which the coolant channel is formed. However, it can be arranged on the outside of the easily deformable contact surface of the conductive structure (claim 6).
In this case, the cooling efficiency of the semiconductor module can be improved, and the semiconductor module and the conductive structure can be easily arranged.

また、上記絶縁材は、上記難変形当接面又は上記易変形当接面のいずれか一方又は双方に密着した絶縁膜からなるものであってもよい（請求項７）。
この場合には、組付け性に優れた半導体モジュールの絶縁構造を得ることができる。
なお、上記絶縁膜としては、例えば、エポキシ系樹脂、ポリイミド系樹脂、シリコン系樹脂等の樹脂膜とすることができる。或いは、ＰＶＤ（物理的気相蒸着法）やＣＶＤ（化学的気相蒸着法）によって成膜した炭素系皮膜、窒化アルミニウム皮膜、窒化珪素皮膜等の絶縁薄膜を用いることもできる。 The insulating material may be made of an insulating film that is in close contact with one or both of the hardly deformable contact surface and the easily deformable contact surface.
In this case, it is possible to obtain an insulating structure of a semiconductor module excellent in assemblability.
In addition, as said insulating film, it can be set as resin films, such as an epoxy-type resin, a polyimide-type resin, a silicon-type resin, for example. Alternatively, an insulating thin film such as a carbon-based film, an aluminum nitride film, or a silicon nitride film formed by PVD (physical vapor deposition) or CVD (chemical vapor deposition) can also be used.

（実施例１）
本発明の実施例に係る半導体モジュールの絶縁構造につき、図１、図２を用いて説明する。
本例の半導体モジュールの絶縁構造は、半導体素子１１を内蔵した半導体モジュール１と、該半導体モジュール１に接触配置した絶縁材２と、半導体モジュール１との間に絶縁材２を挟むように該絶縁材２に接触配置した導電性構造体としての冷却器３とが、互いに加圧密着してなる。 Example 1
An insulating structure of a semiconductor module according to an embodiment of the present invention will be described with reference to FIGS.
The insulating structure of the semiconductor module of this example is such that the insulating material 2 is sandwiched between the semiconductor module 1 containing the semiconductor element 11, the insulating material 2 disposed in contact with the semiconductor module 1, and the semiconductor module 1. The cooler 3 as a conductive structure disposed in contact with the material 2 is in pressure contact with each other.

上記絶縁材２を挟んで対向配置された半導体モジュール１の当接面と、冷却器３の当接面とのうち、いずれか一方は他方よりも所定の荷重に対する変形量が小さい材料からなる難変形当接面１５であり、他方は該難変形当接面１５よりも所定の荷重に対する変形量が大きい材料からなる易変形当接面３５である。
本例においては、半導体モジュール１が難変形当接面１５を有し、冷却器３が易変形当接面３５を有する。
そして、難変形当接面１５の外周１５１の少なくとも一部は、易変形当接面３５の外周３５１よりも外側に配されている。 Of the contact surface of the semiconductor module 1 and the contact surface of the cooler 3 that are arranged to face each other with the insulating material 2 interposed therebetween, one of the contact surfaces of the cooler 3 is difficult to be made of a material having a smaller deformation amount with respect to a predetermined load than the other. The deformation contact surface 15 is the other, and the other is an easy deformation contact surface 35 made of a material having a larger deformation amount with respect to a predetermined load than the hard deformation contact surface 15.
In this example, the semiconductor module 1 has the hardly deformable contact surface 15, and the cooler 3 has the easily deformable contact surface 35.
At least a part of the outer periphery 151 of the hard-to-deform contact surface 15 is arranged outside the outer periphery 351 of the easy-to-deform contact surface 35.

また、図１に示すごとく、難変形当接面１５は矩形状に形成されている。そして、難変形当接面１５の全ての角部１５２は、易変形当接面３５の外周３５１よりも外側に配されている。
冷却器３の易変形当接面３５はアルミからなり、半導体モジュール１の難変形当接面１５は、銅からなる。
なお、難変形当接面１５は、同一面を形成していれば、同一材料によって構成されていなくてもよい。例えば、銅とその周囲に形成されたモールド材のように、異種材料によって同一面を形成し、上記難変形当接面１５とすることもできる。 Moreover, as shown in FIG. 1, the hard deformation contact surface 15 is formed in the rectangular shape. All the corners 152 of the hardly deformable contact surface 15 are arranged outside the outer periphery 351 of the easily deformable contact surface 35.
The easily deformable contact surface 35 of the cooler 3 is made of aluminum, and the hardly deformable contact surface 15 of the semiconductor module 1 is made of copper.
In addition, the hard deformation contact surface 15 does not need to be comprised with the same material, if the same surface is formed. For example, the same surface can be formed by using different materials, such as copper and a molding material formed around the copper, to form the hardly deformable contact surface 15.

難変形当接面１５は、半導体モジュール１における放熱板１５０によって構成されている。半導体モジュール１の内部に設けた半導体素子１１は、上記放熱板１５０に接触配置され、半導体素子１１における発熱を、放熱板１５０を介して冷却器３である冷却器に放熱している。また、半導体モジュール１は、半導体素子１１に接続された端子１２を有している。そして、半導体モジュール１は、半導体素子１１と端子１２と放熱板１５とを封止樹脂１３によって一体化してなる。   The hardly deformable contact surface 15 is configured by a heat radiating plate 150 in the semiconductor module 1. The semiconductor element 11 provided inside the semiconductor module 1 is disposed in contact with the heat radiating plate 150 and radiates heat generated in the semiconductor element 11 to the cooler that is the cooler 3 through the heat radiating plate 150. Further, the semiconductor module 1 has a terminal 12 connected to the semiconductor element 11. The semiconductor module 1 is formed by integrating a semiconductor element 11, a terminal 12, and a heat sink 15 with a sealing resin 13.

また、半導体モジュール１の放熱板１５０と冷却器３との間には、熱伝導性に優れたセラミック板からなる絶縁材２を配設してなる。絶縁材２は、放熱板１５０の表面である難変形当接面１５の全面を覆うように配設されている。また、絶縁材２の厚みは０．１〜１．０ｍｍである。
そして、図２の矢印Ｆに示すごとく、冷却器３が半導体モジュール１に向かって加圧された状態で組み付けられている。
また、半導体モジュール１と絶縁材２との間、及び絶縁材２と冷却器３との間は、それぞれ放熱グリスが充填されている。ただし、放熱グリスを充填せずに、半導体モジュール１と絶縁材２、及び絶縁材２と冷却器３とを直接接触させてもよい。或いは接着剤を介在させてもよい。 Further, an insulating material 2 made of a ceramic plate having excellent thermal conductivity is disposed between the heat sink 150 of the semiconductor module 1 and the cooler 3. The insulating material 2 is disposed so as to cover the entire surface of the hard deformation contact surface 15 which is the surface of the heat radiating plate 150. Moreover, the thickness of the insulating material 2 is 0.1-1.0 mm.
As shown by an arrow F in FIG. 2, the cooler 3 is assembled in a state of being pressurized toward the semiconductor module 1.
Moreover, between the semiconductor module 1 and the insulating material 2, and between the insulating material 2 and the cooler 3, each is filled with thermal radiation grease. However, the semiconductor module 1 and the insulating material 2 and the insulating material 2 and the cooler 3 may be brought into direct contact with each other without being filled with heat radiation grease. Alternatively, an adhesive may be interposed.

次に、本例の作用効果につき説明する。
上記難変形当接面１５の外周１５１の少なくとも一部は、上記易変形当接面３５の外周３５１よりも外側に配されている。そのため、少なくとも、易変形当接面３５の外周３５１よりも難変形当接面１５の外周１５１が外側に配された部分においては、応力の集中を防ぎ、易変形当接面３５の変形を防ぐことができる。それ故、絶縁材２に曲げの力が働くことを防止し、絶縁材２の破損を防ぐことができる。その結果、半導体モジュール１と冷却器３との間における電気的絶縁性の低下を防ぐことができる。 Next, the function and effect of this example will be described.
At least a part of the outer periphery 151 of the hardly deformable contact surface 15 is arranged outside the outer periphery 351 of the easily deformable contact surface 35. Therefore, at least in the portion where the outer periphery 151 of the hard-to-deform contact surface 15 is arranged outside the outer periphery 351 of the easy-to-deform contact surface 35, stress concentration is prevented and deformation of the easily deformable contact surface 35 is prevented. be able to. Therefore, it is possible to prevent a bending force from acting on the insulating material 2 and to prevent the insulating material 2 from being damaged. As a result, it is possible to prevent a decrease in electrical insulation between the semiconductor module 1 and the cooler 3.

また、図１に示すごとく、難変形当接面１５の全ての角部１５２は、易変形当接面３５の外周３５１よりも外側に配されているため、絶縁材２の破損をより効果的に防ぐことができる。
難変形当接面１５の外周１５１の中でも特に角部１５２が易変形当接面３５の表面に当接すると、この角部１５２において応力が特に集中しやすく、易変形当接面３５が変形し、絶縁材２破損の原因となりやすい。そこで、難変形当接面１５における全ての角部１５２を易変形当接面３５の外周３５１の外側に配することにより、絶縁材２の破損を効果的に防ぐことができる。 Further, as shown in FIG. 1, since all the corners 152 of the hardly deformable contact surface 15 are arranged outside the outer periphery 351 of the easily deformable contact surface 35, damage to the insulating material 2 is more effective. Can be prevented.
In particular, when the corner 152 is in contact with the surface of the easily deformable contact surface 35 in the outer periphery 151 of the hardly deformable contact surface 15, stress is particularly easily concentrated on the corner 152, and the easily deformable contact surface 35 is deformed. This is likely to cause damage to the insulating material 2. Therefore, by disposing all the corners 152 on the hardly deformable contact surface 15 outside the outer periphery 351 of the easily deformable contact surface 35, it is possible to effectively prevent the insulating material 2 from being damaged.

また、半導体モジュール１に絶縁材２を介して当接配置する導電性構造体は、半導体モジュール１を冷却する冷却器３であるため、半導体モジュール１を効率的に冷却することができると共に、半導体モジュール１と導電性構造体（冷却器３）との間の電気的絶縁性を確保することができる。
即ち、半導体モジュール１の発熱を冷却器３へ充分に放熱するためには、半導体モジュール１と冷却器３とを充分に加圧密着させる必要がある。そうすると、半導体モジュール１と冷却器３との間の絶縁材２には大きな加圧力がかかることとなる。そこで、本発明を適用して応力集中を緩和することにより、半導体モジュール１と冷却器３との間に全体として大きな加圧力をかけたとしても、絶縁材２の破損を効果的に防ぎ、電気的絶縁性を確保することができる。
このように、半導体モジュール１の冷却効率の確保と電気的絶縁性の低下の防止との両立を図ることができる。 In addition, since the conductive structure disposed in contact with the semiconductor module 1 via the insulating material 2 is the cooler 3 that cools the semiconductor module 1, the semiconductor module 1 can be efficiently cooled and the semiconductor The electrical insulation between the module 1 and the conductive structure (cooler 3) can be ensured.
That is, in order to sufficiently dissipate the heat generated by the semiconductor module 1 to the cooler 3, it is necessary to sufficiently press-contact the semiconductor module 1 and the cooler 3. Then, a large pressing force is applied to the insulating material 2 between the semiconductor module 1 and the cooler 3. Therefore, by applying the present invention to alleviate the stress concentration, even if a large pressure is applied between the semiconductor module 1 and the cooler 3 as a whole, it is possible to effectively prevent the insulating material 2 from being damaged. Insulative insulation.
Thus, it is possible to achieve both of ensuring the cooling efficiency of the semiconductor module 1 and preventing the deterioration of the electrical insulation.

以上のごとく、本例によれば、絶縁材の破損を防ぎ、電気的絶縁性の低下を充分に防ぐことができる半導体モジュールの絶縁構造を提供することができる。   As described above, according to this example, it is possible to provide an insulating structure of a semiconductor module that can prevent damage to an insulating material and sufficiently prevent a decrease in electrical insulation.

（実施例２）
本例は、図３に示すごとく、半導体モジュール１の両面にそれぞれ絶縁材２を介して導電性構造体としての冷却器３を加圧密着させた絶縁構造の例である。
即ち、本例の半導体モジュール１は、両面冷却型の半導体モジュールであって、放熱板１５０を両面に有する。そして、各放熱板１５０の表面である難変形当接面１５に対して、絶縁材２を介して冷却器３を加圧密着させている。
その他は、実施例１と同様である。 (Example 2)
This example is an example of an insulating structure in which a cooler 3 as a conductive structure is pressed and adhered to both surfaces of a semiconductor module 1 via an insulating material 2 as shown in FIG.
That is, the semiconductor module 1 of this example is a double-sided cooling type semiconductor module, and has the heat sink 150 on both sides. The cooler 3 is pressed and adhered to the hardly deforming contact surface 15 which is the surface of each heat radiating plate 150 via the insulating material 2.
Others are the same as in the first embodiment.

本例の場合には、半導体モジュール１を両面から冷却することができるため、半導体モジュール１の冷却効率を向上させることができる。
その他、実施例１と同様の作用効果を有する。 In the case of this example, since the semiconductor module 1 can be cooled from both sides, the cooling efficiency of the semiconductor module 1 can be improved.
In addition, the same effects as those of the first embodiment are obtained.

（実施例３）
本例は、図４に示すごとく、難変形当接面１５の全外周１５１を、易変形当接面３５の外周３５１よりも外側に配した例である。
即ち、半導体モジュール１の放熱板１５０の表面である難変形当接面１５の外周１５１の全てが、導電性構造体である冷却器３の易変形当接面３５の外周よりも外側に配されている。
その他は、実施例１と同様である。 (Example 3)
In this example, as shown in FIG. 4, the entire outer periphery 151 of the hardly deformable contact surface 15 is arranged outside the outer periphery 351 of the easily deformable contact surface 35.
That is, the entire outer periphery 151 of the hard-to-deform contact surface 15 that is the surface of the heat sink 150 of the semiconductor module 1 is arranged outside the outer periphery of the easy-to-deform contact surface 35 of the cooler 3 that is a conductive structure. ing.
Others are the same as in the first embodiment.

本例の場合には、難変形当接面１５と易変形当接面３５との当接構造において応力が集中する部分を無くすことができるため、絶縁材２の破損を一層効果的に防ぐことができる。
その他、実施例１と同様の作用効果を有する。 In the case of this example, it is possible to eliminate a portion where stress is concentrated in the contact structure between the hardly deformable contact surface 15 and the easily deformable contact surface 35, so that the damage of the insulating material 2 can be prevented more effectively. Can do.
In addition, the same effects as those of the first embodiment are obtained.

（実施例４）
本例は、図５に示すごとく、導電性構造体としての冷却器３の内部に冷却媒体を流通させる冷媒流路３１を形成した例である。
そして、冷媒流路３１の形成方向と直交する方向について、半導体モジュール１の難変形当接面１５の外周１５１が、冷却器３の易変形当接面３５よりも外側に配されている。「冷媒流路３１の形成方向」は図５における紙面に垂直な方向であり、「冷媒流路３１の形成方向と直交する方向」は図５における左右の方向である。
その他は、実施例１と同様である。 Example 4
In this example, as shown in FIG. 5, a coolant channel 31 for circulating a cooling medium is formed inside the cooler 3 as a conductive structure.
The outer periphery 151 of the hardly deformable contact surface 15 of the semiconductor module 1 is arranged outside the easily deformable contact surface 35 of the cooler 3 in a direction orthogonal to the direction in which the coolant channel 31 is formed. The “direction in which the refrigerant flow path 31 is formed” is a direction perpendicular to the paper surface in FIG. 5, and the “direction perpendicular to the direction in which the refrigerant flow path 31 is formed” is the left-right direction in FIG.
Others are the same as in the first embodiment.

本例の場合には、半導体モジュール１の冷却効率を向上させることができると共に、半導体モジュール１と冷却器３との配置を容易に行うことができる。
その他、実施例１と同様の作用効果を有する。 In the case of this example, the cooling efficiency of the semiconductor module 1 can be improved, and the semiconductor module 1 and the cooler 3 can be easily arranged.
In addition, the same effects as those of the first embodiment are obtained.

（実施例５）
本例は、図６〜図９に示すごとく、冷媒流路３１を有する冷却器３を導電性構造体として、半導体モジュール１の両面に配置した例である。
また、図８、図９に示すごとく、冷却器３の易変形当接面３５は他の部分よりも突出して形成されている。これにより、半導体モジュール１の難変形当接面１５の外周１５１の全てを、易変形当接面３５の外周３５１よりも外側に配置できるようにしている。
以上により、本例は、上記実施例２〜４を組合わせた態様としている。 (Example 5)
In this example, as shown in FIGS. 6 to 9, the cooler 3 having the refrigerant flow path 31 is disposed on both surfaces of the semiconductor module 1 as a conductive structure.
As shown in FIGS. 8 and 9, the easily deformable contact surface 35 of the cooler 3 is formed so as to protrude from other portions. Thus, the entire outer periphery 151 of the hardly deformable contact surface 15 of the semiconductor module 1 can be arranged outside the outer periphery 351 of the easily deformable contact surface 35.
As described above, this example is a mode in which the above Examples 2 to 4 are combined.

したがって、本例によれば、上記実施例２〜４の作用効果を得ることができる。
即ち、半導体モジュール１を両面から冷却することができるため、半導体モジュール１の冷却効率を向上させることができる。また、難変形当接面１５と易変形当接面３５との当接構造において応力が集中する部分を無くすことができるため、絶縁材２の破損を一層効果的に防ぐことができる。更には、冷却媒体を用いて半導体モジュール１を冷却することができるため、半導体モジュール１の冷却効率を向上させることができる。
その他、実施例１と同様の作用効果を有する。 Therefore, according to the present example, the operational effects of the above-described Examples 2 to 4 can be obtained.
That is, since the semiconductor module 1 can be cooled from both sides, the cooling efficiency of the semiconductor module 1 can be improved. In addition, since the portion where stress concentrates in the contact structure between the hardly deformable contact surface 15 and the easily deformable contact surface 35 can be eliminated, damage to the insulating material 2 can be more effectively prevented. Furthermore, since the semiconductor module 1 can be cooled using a cooling medium, the cooling efficiency of the semiconductor module 1 can be improved.
In addition, the same effects as those of the first embodiment are obtained.

（実施例６）
本例は、図１０に示すごとく、難変形当接面１５である半導体モジュール１の放熱板１５０の表面に密着した絶縁膜を、半導体モジュール１と冷却器３との間の絶縁材２とした例である。
上記絶縁膜としては、例えば、エポキシ系樹脂、ポリイミド系樹脂、シリコン系樹脂等の樹脂膜とすることができる。或いは、ＰＶＤ（物理的気相蒸着法）やＣＶＤ（化学的気相蒸着法）によって成膜した炭素系皮膜、窒化アルミニウム皮膜、窒化珪素皮膜等の絶縁薄膜を用いることもできる。
また、本例においては、導電性構造体としての冷却器３に冷媒流路３１を設けている。
その他は、実施例１と同様である。 (Example 6)
In this example, as shown in FIG. 10, the insulating film that is in close contact with the surface of the heat sink 150 of the semiconductor module 1 that is the hardly deformable contact surface 15 is used as the insulating material 2 between the semiconductor module 1 and the cooler 3. It is an example.
As the insulating film, for example, a resin film such as an epoxy resin, a polyimide resin, or a silicon resin can be used. Alternatively, an insulating thin film such as a carbon-based film, an aluminum nitride film, or a silicon nitride film formed by PVD (physical vapor deposition) or CVD (chemical vapor deposition) can also be used.
Moreover, in this example, the refrigerant | coolant flow path 31 is provided in the cooler 3 as an electroconductive structure.
Others are the same as in the first embodiment.

本例の場合には、組付け性に優れた半導体モジュールの絶縁構造を得ることができる。即ち、冷却器３と絶縁材２とが予め一体化された状態で組付け作業を行うことができるため、半導体モジュール１と冷却器３及び絶縁材２とを容易に組付けることができる。
その他、実施例１と同様の作用効果を有する。 In the case of this example, it is possible to obtain a semiconductor module insulating structure excellent in assemblability. That is, since the assembly work can be performed in a state where the cooler 3 and the insulating material 2 are integrated in advance, the semiconductor module 1, the cooler 3 and the insulating material 2 can be easily assembled.
In addition, the same effects as those of the first embodiment are obtained.

（実施例７）
本例は、図１１に示すごとく、易変形当接面３５である導電性構造体としての冷却器３の表面に密着した絶縁膜を、半導体モジュール１と冷却器３との間の絶縁材２とした例である。
絶縁膜（絶縁材２）は、冷却器３の全周を覆うように形成されている。
その他は、実施例６と同様である。
本例の場合にも、実施例６と同様に、組付け性に優れた半導体モジュールの絶縁構造を得ることができる。 (Example 7)
In this example, as shown in FIG. 11, the insulating film 2 that is in close contact with the surface of the cooler 3 as the conductive structure which is the easily deformable contact surface 35 is used as the insulating material 2 between the semiconductor module 1 and the cooler 3. It is an example.
The insulating film (insulating material 2) is formed so as to cover the entire circumference of the cooler 3.
Others are the same as in Example 6.
Also in the case of this example, the insulating structure of the semiconductor module excellent in assemblability can be obtained as in the sixth embodiment.

なお、上記実施例においては、半導体モジュールに絶縁材を介して当接させる導電性構造体として、冷却器を配置する例を示したが、導電性構造体としては、例えば、ヒートシンク、ケース、他の電子部品等、他の構造体を配設してもよい。
また、上記実施例においては、難変形当接面を構成する材料として銅を、易変形当接面を構成する材料としてアルミを用いたが、難変形当接面を易変形当接面よりも、所定の荷重に対する変形量が小さい材料で構成すれば、上記の材料に限らず、種々の材料を用いることができる。 In the above-described embodiment, an example in which a cooler is disposed as a conductive structure that is brought into contact with the semiconductor module via an insulating material has been described. However, examples of the conductive structure include a heat sink, a case, and the like. Other structures such as electronic components may be provided.
In the above embodiment, copper is used as the material constituting the hardly deformable contact surface, and aluminum is used as the material constituting the easily deformable contact surface. As long as it is made of a material having a small deformation amount with respect to a predetermined load, not only the above materials but also various materials can be used.

実施例１における、半導体モジュールの絶縁構造の平面図。FIG. 3 is a plan view of an insulating structure of a semiconductor module in Example 1. 図１のＡ−Ａ線矢視断面図。FIG. 2 is a cross-sectional view taken along line AA in FIG. 1. 実施例２における、半導体モジュールの絶縁構造の断面図。Sectional drawing of the insulation structure of a semiconductor module in Example 2. FIG. 実施例３における、半導体モジュールの絶縁構造の平面図。The top view of the insulation structure of a semiconductor module in Example 3. FIG. 実施例４における、半導体モジュールの絶縁構造の断面図。Sectional drawing of the insulation structure of a semiconductor module in Example 4. FIG. 実施例５における、半導体モジュールの絶縁構造の平面図。The top view of the insulation structure of a semiconductor module in Example 5. FIG. 図６のＢ−Ｂ線矢視断面図。FIG. 7 is a cross-sectional view taken along line B-B in FIG. 6. 実施例５における、冷却器の易変形当接面の平面図。The top view of the easily deformable contact surface of the cooler in Example 5. FIG. 図７のＣ−Ｃ線矢視断面図。CC sectional view taken on the line of FIG. 実施例６における、半導体モジュールの絶縁構造の断面図。Sectional drawing of the insulation structure of a semiconductor module in Example 6. FIG. 実施例７における、半導体モジュールの絶縁構造の断面図。Sectional drawing of the insulation structure of a semiconductor module in Example 7. FIG. 従来例における、半導体モジュールの絶縁構造の平面図。The top view of the insulation structure of the semiconductor module in a prior art example. 図１２のＤ−Ｄ線矢視断面図。The DD sectional view taken on the line of FIG.

符号の説明Explanation of symbols

１ 半導体モジュール
１１ 半導体素子
１５ 難変形当接面
１５１ 外周
２ 絶縁材
３ 冷却器
３５ 易変形当接面
３５１ 外周 DESCRIPTION OF SYMBOLS 1 Semiconductor module 11 Semiconductor element 15 Hard deformation contact surface 151 Outer periphery 2 Insulation material 3 Cooler 35 Easy deformation contact surface 351 Outer periphery

Claims (7)

半導体素子を内蔵した半導体モジュールと、該半導体モジュールに接触配置した絶縁材と、上記半導体モジュールとの間に上記絶縁材を挟むように該絶縁材に接触配置した導電性構造体とが、互いに加圧密着してなり、
上記絶縁材を挟んで対向配置された上記半導体モジュールの当接面と、上記導電性構造体の当接面とのうち、いずれか一方は他方よりも所定の荷重に対する変形量が小さい材料からなる難変形当接面であり、他方は該難変形当接面よりも所定の荷重に対する変形量が大きい材料からなる易変形当接面であり、
上記難変形当接面の外周の少なくとも一部は、上記易変形当接面の外周よりも外側に配されていることを特徴とする半導体モジュールの絶縁構造。 A semiconductor module incorporating a semiconductor element, an insulating material disposed in contact with the semiconductor module, and a conductive structure disposed in contact with the insulating material so as to sandwich the insulating material between the semiconductor module are mutually added. Pressure contact,
One of the contact surface of the semiconductor module and the contact surface of the conductive structure, which are arranged to face each other with the insulating material interposed therebetween, is made of a material having a smaller deformation amount with respect to a predetermined load than the other. It is a hard deformation contact surface, the other is a hard deformation contact surface made of a material having a larger deformation amount with respect to a predetermined load than the hard deformation contact surface,
An insulating structure for a semiconductor module, wherein at least a part of the outer periphery of the hard-to-deform contact surface is disposed outside the outer periphery of the easy-deform contact surface. 請求項１において、上記難変形当接面の全ての角部は、上記易変形当接面の外周よりも外側に配されていることを特徴とする半導体モジュールの絶縁構造。   2. The insulating structure for a semiconductor module according to claim 1, wherein all corner portions of the hardly deformable contact surface are arranged outside an outer periphery of the easily deformable contact surface. 請求項１又は２において、上記難変形当接面の全外周は、上記易変形当接面の外周よりも外側に配されていることを特徴とする半導体モジュールの絶縁構造。   3. The insulating structure for a semiconductor module according to claim 1, wherein an entire outer periphery of the hardly deformable contact surface is arranged outside an outer periphery of the easily deformable contact surface. 請求項１〜３のいずれか一項において、上記導電性構造体は、上記半導体モジュールを冷却する冷却器であることを特徴とする半導体モジュールの絶縁構造。   The insulating structure for a semiconductor module according to claim 1, wherein the conductive structure is a cooler that cools the semiconductor module. 請求項４において、上記半導体モジュールが上記難変形当接面を有し、上記導電性構造体が上記易変形当接面を有することを特徴とする半導体モジュールの絶縁構造。   5. The insulating structure for a semiconductor module according to claim 4, wherein the semiconductor module has the hardly deformable contact surface, and the conductive structure has the easily deformable contact surface. 請求項５において、上記導電性構造体は、内部に冷却媒体を流通させる冷媒流路を形成してなり、該冷媒流路の形成方向と直交する方向について、上記半導体モジュールの上記難変形当接面の外周が、上記導電性構造体の上記易変形当接面よりも外側に配されていることを特徴とする半導体モジュールの絶縁構造。   6. The hard-to-deform contact of the semiconductor module according to claim 5, wherein the conductive structure is formed with a coolant channel through which a cooling medium flows, and in a direction orthogonal to a direction in which the coolant channel is formed. An insulating structure for a semiconductor module, wherein an outer periphery of the surface is arranged outside the easily deformable contact surface of the conductive structure. 請求項１〜６のいずれか一項において、上記絶縁材は、上記難変形当接面又は上記易変形当接面のいずれか一方又は双方に密着した絶縁膜からなることを特徴とする半導体モジュールの絶縁構造。   7. The semiconductor module according to claim 1, wherein the insulating material is made of an insulating film that is in close contact with either or both of the hardly deformable contact surface and the easily deformable contact surface. Insulation structure.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016092266A (en) * 2014-11-06 2016-05-23 トヨタ自動車株式会社 Semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111568A (en) * 1994-10-07 1996-04-30 Mitsubishi Electric Corp Printed wiring board provided with heat sink
JP2005175130A (en) * 2003-12-10 2005-06-30 Toyota Motor Corp Semiconductor module, semiconductor device and load driver
JP2005303018A (en) * 2004-04-13 2005-10-27 Fuji Electric Holdings Co Ltd Semiconductor device
JP2006294699A (en) * 2005-04-06 2006-10-26 Toyota Industries Corp Heat sink

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111568A (en) * 1994-10-07 1996-04-30 Mitsubishi Electric Corp Printed wiring board provided with heat sink
JP2005175130A (en) * 2003-12-10 2005-06-30 Toyota Motor Corp Semiconductor module, semiconductor device and load driver
JP2005303018A (en) * 2004-04-13 2005-10-27 Fuji Electric Holdings Co Ltd Semiconductor device
JP2006294699A (en) * 2005-04-06 2006-10-26 Toyota Industries Corp Heat sink

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016092266A (en) * 2014-11-06 2016-05-23 トヨタ自動車株式会社 Semiconductor device

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