JP2005175130A - Semiconductor module, semiconductor device and load driving device - Google Patents

Semiconductor module, semiconductor device and load driving device Download PDF

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JP2005175130A
JP2005175130A JP2003411673A JP2003411673A JP2005175130A JP 2005175130 A JP2005175130 A JP 2005175130A JP 2003411673 A JP2003411673 A JP 2003411673A JP 2003411673 A JP2003411673 A JP 2003411673A JP 2005175130 A JP2005175130 A JP 2005175130A
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semiconductor element
electrode substrates
heat
electrode
semiconductor
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JP3978424B2 (en
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Hiromichi Kuno
裕道 久野
Takashi Torii
孝史 鳥井
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Toyota Motor Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor module capable of suppressing distortion generated by a thermal expansion difference between a power semiconductor element and an electrode substrate, and to provide a semiconductor device and a load driver. <P>SOLUTION: Electrode substrates 302 and 304 clamp a power transistor Q3 and a reverse parallel diode D3 from both sides. Overall dimensions of the surface of the electrode substrates 302 and 304 facing heat sinks 312 and 314 can be designed larger than overall dimensions of the surface of the heat sinks 312 and 314 facing the electrode substrates 302 and 304. Consequently, mold resin 320 spreads to sides of the electrode substrates 302 and 304 not mounting the element and presses the electrode substrates 302 and 304 against the power semiconductor element. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は、半導体モジュール、半導体装置および負荷駆動装置に関し、特に、パワー半導体素子が電極基板上に搭載された半導体モジュール、半導体装置および負荷駆動装置に関する。   The present invention relates to a semiconductor module, a semiconductor device, and a load driving device, and more particularly to a semiconductor module, a semiconductor device, and a load driving device in which a power semiconductor element is mounted on an electrode substrate.

パワー半導体素子が電極基板上に搭載された半導体装置として、特開２００３−１６８７６９号公報では、上部に電力用半導体素子が搭載された導電性基板の下部に、絶縁シート、放熱板および外部放熱器を備え、少なくとも導電性基板および電力用半導体素子が樹脂封止される電力用半導体装置の構成が開示されている（特許文献１参照）。   As a semiconductor device in which a power semiconductor element is mounted on an electrode substrate, in Japanese Patent Laid-Open No. 2003-168769, an insulating sheet, a heat sink, and an external radiator are provided below a conductive substrate on which a power semiconductor element is mounted. A configuration of a power semiconductor device in which at least a conductive substrate and a power semiconductor element are sealed with a resin is disclosed (see Patent Document 1).

この特開２００３−１６８７６９号公報に開示された発明によると、導電性基板と同等以上の熱伝導率を有する材質で形成された放熱板において熱が放熱板の平面方向に拡散し、放熱板が取付けられる外部放熱器において熱の集中部が発生せず、放熱性に優れた電力用半導体装置を得ることができるとされる。
特開２００３−１６８７６９号公報 According to the invention disclosed in Japanese Patent Application Laid-Open No. 2003-168769, heat is diffused in the plane direction of the heat radiating plate in the heat radiating plate formed of a material having a thermal conductivity equal to or higher than that of the conductive substrate. It is said that there is no heat concentrated portion in the attached external radiator, and a power semiconductor device excellent in heat dissipation can be obtained.
JP 2003-168769 A

パワー半導体素子が電極基板上に搭載される場合、パワー半導体素子と電極基板との熱膨張係数は一般的に異なり、パワー半導体素子と電極基板との接合部において、パワー半導体素子と電極基板との熱膨張差による歪みが発生する。そして、この歪みが大きくなると、たとえば、パワー半導体素子を電極基板と接続する半田層などの導電性接合材にクラックが生じ、パワー半導体素子と電極基板との接合不良が発生するため、この歪みを適切に抑制する必要がある。   When the power semiconductor element is mounted on the electrode substrate, the coefficient of thermal expansion between the power semiconductor element and the electrode substrate is generally different, and at the junction between the power semiconductor element and the electrode substrate, Distortion due to thermal expansion difference occurs. When this distortion increases, for example, a crack occurs in a conductive bonding material such as a solder layer that connects the power semiconductor element to the electrode substrate, resulting in poor bonding between the power semiconductor element and the electrode substrate. It is necessary to suppress appropriately.

上述した特開２００３−１６８７６９号公報に記載された電力用半導体装置は、パワー半導体素子の放熱性に優れるものとして有用ではあるが、パワー半導体素子と電極基板（導電性基板）との接合部において発生する歪みを抑制できる構造を有しておらず、上記の課題を解決することはできない。   The power semiconductor device described in Japanese Patent Laid-Open No. 2003-168769 described above is useful as a power semiconductor element having excellent heat dissipation, but at the junction between the power semiconductor element and an electrode substrate (conductive substrate). It does not have a structure that can suppress the generated distortion, and the above-described problems cannot be solved.

そこで、この発明は、かかる課題を解決するためになされたものであり、その目的は、パワー半導体素子と電極基板との熱膨張差により発生する歪みを抑制することができる半導体モジュールを提供することである。   Accordingly, the present invention has been made to solve such a problem, and an object thereof is to provide a semiconductor module capable of suppressing distortion generated due to a difference in thermal expansion between a power semiconductor element and an electrode substrate. It is.

また、この発明の別の目的は、パワー半導体素子と電極基板との熱膨張差により発生する歪みを抑制することができる半導体装置を提供することである。   Another object of the present invention is to provide a semiconductor device capable of suppressing distortion generated by a difference in thermal expansion between a power semiconductor element and an electrode substrate.

また、この発明の別の目的は、パワー半導体素子と電極基板との熱膨張差により発生する歪みを抑制することができる負荷駆動装置を提供することである。   Another object of the present invention is to provide a load driving device capable of suppressing distortion generated due to a difference in thermal expansion between a power semiconductor element and an electrode substrate.

この発明によれば、半導体モジュールは、半導体素子と、半導体素子を両側から挟み込むように設けられる第１および第２の電極基板と、第１および第２の電極基板を半導体素子に押付ける押付手段とを備える。   According to this invention, a semiconductor module includes a semiconductor element, first and second electrode substrates provided so as to sandwich the semiconductor element from both sides, and pressing means for pressing the first and second electrode substrates against the semiconductor element. With.

好ましくは、押付手段は、半導体素子ならびに第１および第２の電極基板を封止する樹脂モールド材である。   Preferably, the pressing means is a resin mold material for sealing the semiconductor element and the first and second electrode substrates.

好ましくは、半導体モジュールは、連設される第１の電極基板、半導体素子、および第２の電極基板をさらに両側から挟み込むように設けられる第１および第２の放熱板をさらに備え、第１および第２の電極基板における第１および第２の放熱板とそれぞれ対向する第１の面の外形寸法は、第１および第２の放熱板における第１および第２の電極基板とそれぞれ対向する第２の面の外形寸法よりも大きく、樹脂モールド材は、第１および第２の放熱板をさらに封止し、第１および第２の面の外形寸法差により第１および第２の電極基板における半導体素子の実装面と対向する非実装面側に回り込むことによって、第１および第２の電極基板を半導体素子に押付ける。   Preferably, the semiconductor module further includes first and second heat radiating plates provided so as to sandwich the first electrode substrate, the semiconductor element, and the second electrode substrate that are continuously provided from both sides, The external dimensions of the first surface of the second electrode substrate facing the first and second heat sinks are the second dimensions of the first and second heat sinks facing the first and second electrode substrates, respectively. The resin mold material further seals the first and second heat sinks, and the semiconductors in the first and second electrode substrates due to the difference in the outer dimension between the first and second surfaces. The first and second electrode substrates are pressed against the semiconductor element by going around to the non-mounting surface side facing the mounting surface of the element.

好ましくは、第１および第２の放熱板における第２の面と対向する第３の面の外形寸法は、第２の面の外形寸法よりも大きい。   Preferably, the outer dimensions of the third surface facing the second surface of the first and second heat radiating plates are larger than the outer dimensions of the second surface.

好ましくは、半導体モジュールは、連設される第１の電極基板、半導体素子、および第２の電極基板をさらに両側から挟み込むように設けられる第１および第２の放熱板をさらに備え、押付手段は、第１および第２の放熱板をそれぞれ第１および第２の電極基板に押付けることによって第１および第２の電極基板を半導体素子に押付ける。   Preferably, the semiconductor module further includes first and second heat radiating plates provided so as to sandwich the first electrode substrate, the semiconductor element, and the second electrode substrate that are continuously provided from both sides, and the pressing unit includes The first and second heat dissipation plates are pressed against the first and second electrode substrates, respectively, thereby pressing the first and second electrode substrates against the semiconductor element.

好ましくは、押付手段は、半導体素子、第１および第２の電極基板、ならびに第１および第２の放熱板を封止する樹脂モールド材である。   Preferably, the pressing means is a resin mold material that seals the semiconductor element, the first and second electrode substrates, and the first and second heat sinks.

好ましくは、第１および第２の放熱板における第１および第２の電極基板とそれぞれ対向する第１の面の外形寸法は、第１および第２の放熱板における第１の面と対向する第２の面の外形寸法よりも大きく、樹脂モールド材は、第１および第２の面の外形寸法差により生じる領域に回り込むことによって、第１および第２の放熱板をそれぞれ第１および第２の電極基板に押付ける。   Preferably, the outer dimensions of the first surface of the first and second heat radiating plates facing the first and second electrode substrates respectively are the first dimension of the first and second heat radiating plates facing the first surface. The resin mold material is larger than the outer dimension of the second surface, and the resin mold material wraps around the region caused by the outer dimension difference between the first and second surfaces, so that the first and second heat radiating plates are moved to the first and second surfaces, respectively. Press against the electrode substrate.

また、この発明によれば、半導体装置は、上述したいずれかの半導体モジュールと、半導体モジュールを両側から挟み込むように設けられる第１および第２の冷却器とを備え、第１および第２の冷却器は、それぞれ第１および第２の放熱板と密接する。   According to the invention, the semiconductor device includes any one of the semiconductor modules described above, and the first and second coolers provided so as to sandwich the semiconductor module from both sides, and the first and second cooling devices are provided. The vessel is in intimate contact with the first and second heat sinks, respectively.

また、この発明によれば、負荷駆動装置は、直流電源と、直流電源から直流電力を受け、電気負荷を駆動するインバータ装置とを備え、インバータ装置を構成する複数のアームの各々は、半導体素子と、半導体素子を両側から挟み込むように設けられる第１および第２の電極基板と、連設される第１の電極基板、半導体素子、および第２の電極基板をさらに両側から挟み込むように設けられる第１および第２の放熱板と、連設される第１の放熱板、第１の電極基板、半導体素子、第２の電極基板、および第２の放熱板をさらに両側から挟み込むように設けられる第１および第２の冷却器と、半導体素子、第１および第２の電極基板、ならびに第１および第２の放熱板を封止する樹脂モールド材とを含み、樹脂モールド材は、第１および第２の電極基板を半導体素子に押付ける。   According to the invention, the load driving device includes a DC power source and an inverter device that receives DC power from the DC power source and drives an electric load, and each of the plurality of arms constituting the inverter device includes a semiconductor element. And the first and second electrode substrates provided so as to sandwich the semiconductor element from both sides, and the first electrode substrate, the semiconductor element, and the second electrode substrate provided in series are further provided from both sides. The first and second heat radiating plates and the first heat radiating plate, the first electrode substrate, the semiconductor element, the second electrode substrate, and the second heat radiating plate that are connected to each other are further sandwiched from both sides. A first and second cooler; and a resin mold material that seals the semiconductor element, the first and second electrode substrates, and the first and second heat sinks. Second Pole pressing the substrate to the semiconductor element.

この発明による半導体モジュールにおいては、半導体素子の発熱による熱膨張時、押付手段によって第１および第２の電極基板から半導体素子へ押付力が発生する。   In the semiconductor module according to the present invention, a pressing force is generated from the first and second electrode substrates to the semiconductor element by the pressing means during thermal expansion due to heat generation of the semiconductor element.

したがって、この発明によれば、半導体素子と第１および第２の電極基板との接合部における歪みが抑制される。その結果、半導体素子を第１および第２の電極基板と接合する半田などの接合材におけるクラックの発生を防止でき、半導体装置の信頼性が向上する。   Therefore, according to the present invention, distortion at the junction between the semiconductor element and the first and second electrode substrates is suppressed. As a result, the occurrence of cracks in a bonding material such as solder for bonding the semiconductor element to the first and second electrode substrates can be prevented, and the reliability of the semiconductor device is improved.

また、この発明による半導体モジュールにおいては、半導体素子ならびに第１および第２の電極基板を封止する樹脂モールド材によって第１および第２の電極基板から半導体素子へ押付力が発生する。   In the semiconductor module according to the present invention, a pressing force is generated from the first and second electrode substrates to the semiconductor element by the resin molding material for sealing the semiconductor element and the first and second electrode substrates.

したがって、この発明によれば、押付力を発生させるための部材を別途設けることなく、半導体素子の発熱によって発生する、半導体素子と第１および第２の電極基板との接合部における歪みを抑制することができる。   Therefore, according to the present invention, without providing a member for generating a pressing force, the distortion at the junction between the semiconductor element and the first and second electrode substrates, which is generated by the heat generation of the semiconductor element, is suppressed. be able to.

また、この発明による半導体モジュールにおいては、第１および第２の電極基板における第１および第２の放熱板とそれぞれ対向する第１の面の外形寸法を、第１および第２の放熱板における第１および第２の電極基板とそれぞれ対向する第２の面の外形寸法よりも大きくすることによって、第１および第２の電極基板における非素子実装面側に樹脂モールド材が回り込み、これによって第１および第２の電極基板から半導体素子へ押付力が発生する。   In the semiconductor module according to the present invention, the outer dimensions of the first surfaces of the first and second electrode substrates facing the first and second heat sinks are the same as those of the first and second heat sinks. By making it larger than the external dimensions of the second surface facing each of the first and second electrode substrates, the resin mold material wraps around the non-element mounting surface side of the first and second electrode substrates. A pressing force is generated from the second electrode substrate to the semiconductor element.

したがって、この発明によれば、簡単な構成で、樹脂モールド材により第１および第２の電極基板から半導体素子へ押付力を発生させることができる。   Therefore, according to the present invention, it is possible to generate a pressing force from the first and second electrode substrates to the semiconductor element by the resin molding material with a simple configuration.

また、この発明による半導体モジュールにおいては、第１および第２の放熱板における上記第２の面と対向する第３の面の外形寸法を第２の面の外形寸法よりも大きくすることによって、樹脂モールド材による第１および第２の電極基板から半導体素子への押付力を確保しつつ、放熱板において平面方向のより広い範囲に熱が拡散する。   In the semiconductor module according to the present invention, the outer dimension of the third surface of the first and second radiator plates facing the second surface is made larger than the outer dimension of the second surface. While ensuring the pressing force from the first and second electrode substrates to the semiconductor element by the molding material, heat diffuses over a wider range in the plane direction in the heat sink.

したがって、この発明によれば、より効率的に第１および第２の放熱板から外部へ熱を放熱させることができる。   Therefore, according to the present invention, heat can be radiated from the first and second heat radiating plates to the outside more efficiently.

また、この発明による半導体モジュールにおいては、押付手段によって、第１および第２の放熱板からそれぞれ第１および第２の電極基板へ押付力が発生し、その結果、第１および第２の電極基板から半導体素子へ押付力が発生する。   In the semiconductor module according to the present invention, the pressing means generates pressing forces from the first and second heat radiating plates to the first and second electrode substrates, respectively. As a result, the first and second electrode substrates A pressing force is generated from the semiconductor element to the semiconductor element.

したがって、この発明によれば、第１の電極基板と第１の放熱板との接合部および第２の電極基板と第２の放熱板との接合部における各接合面の密着性が向上し、各接合面における接触熱抵抗が低減され、放熱性が向上する。   Therefore, according to the present invention, the adhesion of each joint surface at the joint between the first electrode substrate and the first heat sink and the joint between the second electrode substrate and the second heat sink is improved, Contact thermal resistance at each joint surface is reduced, and heat dissipation is improved.

また、この発明による半導体モジュールにおいては、半導体素子、第１および第２の電極基板、ならびに第１および第２の放熱板を封止する樹脂モールド材によって、第１および第２の放熱板からそれぞれ第１および第２の電極基板へ押付力が発生し、その結果、第１および第２の電極基板から半導体素子へ押付力が発生する。   In the semiconductor module according to the present invention, the first and second heat radiating plates are respectively separated from the semiconductor element, the first and second electrode substrates, and the resin mold material for sealing the first and second heat radiating plates. A pressing force is generated on the first and second electrode substrates, and as a result, a pressing force is generated on the semiconductor element from the first and second electrode substrates.

したがって、この発明によれば、押付力を発生させるための部材を別途設けることなく、半導体素子と第１および第２の電極基板との接合部における歪みを抑制することができ、さらに、第１の電極基板と第１の放熱板との接合部および第２の電極基板と第２の放熱板との接合部における各接合面の密着性を向上させることができる。   Therefore, according to the present invention, it is possible to suppress distortion at the junction between the semiconductor element and the first and second electrode substrates without separately providing a member for generating a pressing force. It is possible to improve the adhesion of each joint surface at the joint between the electrode substrate and the first heat sink and the joint between the second electrode substrate and the second heat sink.

また、この発明による半導体モジュールにおいては、第１および第２の放熱板における第１および第２の電極基板とそれぞれ対向する第１の面の外形寸法を、第１および第２の放熱板におけるその第１の面に対向する第２の面の外形寸法よりも大きくすることによって、第１および第２の放熱板に樹脂モールド材が回り込み、これによって第１および第２の放熱板からそれぞれ第１および第２の電極基板へ押付力が発生し、その結果、第１および第２の電極基板から半導体素子へ押付力が発生する。   In the semiconductor module according to the present invention, the external dimensions of the first surface of the first and second heat radiating plates facing the first and second electrode substrates, respectively, are the same as those of the first and second heat radiating plates. By making it larger than the outer dimension of the second surface opposite to the first surface, the resin mold material wraps around the first and second heat radiating plates. Then, a pressing force is generated on the second electrode substrate, and as a result, a pressing force is generated on the semiconductor element from the first and second electrode substrates.

したがって、この発明によれば、簡単な構成で、樹脂モールド材により第１および第２の放熱板からそれぞれ第１および第２の電極基板へ押付力を発生させ、第１および第２の電極基板から半導体素子へ押付力を発生させることができる。   Therefore, according to the present invention, a pressing force is generated from the first and second heat radiating plates to the first and second electrode substrates by the resin molding material with a simple configuration, and the first and second electrode substrates are obtained. A pressing force can be generated from the semiconductor element to the semiconductor element.

また、この発明による半導体装置においては、樹脂モールド材に妨げられることなく、半導体モジュールの両側に設けられた第１および第２の冷却器がそれぞれ第１および第２の放熱板に密接することによって、第１および第２の放熱板からそれぞれ第１および第２の冷却器へ放熱される。   Further, in the semiconductor device according to the present invention, the first and second coolers provided on both sides of the semiconductor module are in close contact with the first and second heat radiating plates, respectively, without being obstructed by the resin molding material. The heat is radiated from the first and second heat radiating plates to the first and second coolers, respectively.

したがって、この発明によれば、樹脂モールド材によって放熱性が阻害されることはなく、また、半導体モジュールの両面から放熱されるので放熱性に優れる。   Therefore, according to the present invention, the heat dissipation is not hindered by the resin mold material, and the heat dissipation is excellent because the heat is radiated from both sides of the semiconductor module.

また、この発明による負荷駆動装置においては、インバータ装置における各アームの構成において、半導体素子、第１および第２の電極基板、ならびに第１および第２の放熱板を封止する樹脂モールド材によって、第１および第２の電極基板から半導体素子へ押付力が発生する。   Further, in the load driving device according to the present invention, in the configuration of each arm in the inverter device, by the resin mold material for sealing the semiconductor element, the first and second electrode substrates, and the first and second heat radiating plates, A pressing force is generated from the first and second electrode substrates to the semiconductor element.

したがって、この発明によれば、半導体素子の発熱による熱膨張によって発生する、半導体素子と第１および第２の電極基板との接合部における歪みが抑制される。その結果、半導体素子を第１および第２の電極基板と接合する半田などの接合材におけるクラックの発生を防止でき、負荷駆動装置の信頼性が向上する。   Therefore, according to the present invention, distortion at the junction between the semiconductor element and the first and second electrode substrates, which is caused by thermal expansion due to heat generation of the semiconductor element, is suppressed. As a result, it is possible to prevent the occurrence of cracks in the bonding material such as solder for bonding the semiconductor element to the first and second electrode substrates, and the reliability of the load driving device is improved.

以下、本発明の実施の形態について、図面を参照しながら詳細に説明する。なお、図中同一または相当部分には同一符号を付してその説明は繰返さない。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

［実施の形態１］
図１は、この発明による負荷駆動装置の主要部の構成を示す回路図である。 [Embodiment 1]
FIG. 1 is a circuit diagram showing a configuration of a main part of a load driving device according to the present invention.

図１を参照して、負荷駆動装置１００は、コンバータ２１０と、インバータ２２０と、信号生成回路２３０，２４０と、制御回路２５０と、電流センサ２６０と、平滑コンデンサＣ１，Ｃ２とを含む。コンバータ２１０は、リアクトルＬ１と、パワートランジスタＱ１，Ｑ２と、ドライバ２７１，２７２と、逆並列ダイオードＤ１，Ｄ２とからなる。インバータ２２０は、パワートランジスタＱ３〜Ｑ８と、ドライバ２７３〜２７８と、逆並列ダイオードＤ３〜Ｄ８とからなる。   Referring to FIG. 1, load driving device 100 includes a converter 210, an inverter 220, signal generation circuits 230 and 240, a control circuit 250, a current sensor 260, and smoothing capacitors C1 and C2. Converter 210 includes a reactor L1, power transistors Q1 and Q2, drivers 271 and 272, and antiparallel diodes D1 and D2. Inverter 220 includes power transistors Q3 to Q8, drivers 273 to 278, and antiparallel diodes D3 to D8.

直流電源であるバッテリ２００は、たとえば、ニッケル水素またはリチウムイオン等の二次電池からなり、直流電圧を負荷駆動装置１００へ供給するとともに、負荷駆動装置１００からの直流電圧によって充電される。   The battery 200 that is a DC power source is made of, for example, a secondary battery such as nickel metal hydride or lithium ion, and supplies a DC voltage to the load driving device 100 and is charged by the DC voltage from the load driving device 100.

回転機Ｍ１は、３相交流同期回転機もしくは誘導回転機であって、インバータ２２０から交流電力を受けて回転駆動力を発生する。また、回転機Ｍ１は、発電機としても使用され、減速時の発電作用（回生発電）により発電された電圧は、コンバータ２１０を用いて降圧され、バッテリ２００に供給される。   The rotating machine M1 is a three-phase AC synchronous rotating machine or an induction rotating machine, and receives AC power from the inverter 220 to generate a rotational driving force. The rotating machine M1 is also used as a generator, and the voltage generated by the power generation action (regenerative power generation) during deceleration is stepped down using the converter 210 and supplied to the battery 200.

コンバータ２１０を構成するパワートランジスタＱ１，Ｑ２は、たとえば、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ Ｇａｔｅ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒ）からなる。パワートランジスタＱ１，Ｑ２は、電源ライン２９２と接地ライン２９３との間に直列に接続される。また、各パワートランジスタＱ１，Ｑ２のコレクタ−エミッタ間には、エミッタ側からコレクタ側へ電流を流すように逆並列ダイオードＤ１，Ｄ２がそれぞれ接続されている。   Power transistors Q1 and Q2 constituting converter 210 are made of, for example, an IGBT (Insulated Gate Bipolar Transistor). Power transistors Q1, Q2 are connected in series between power supply line 292 and ground line 293. Further, anti-parallel diodes D1 and D2 are connected between the collectors and emitters of the power transistors Q1 and Q2, respectively, so that current flows from the emitter side to the collector side.

ドライバ２７１，２７２は、信号生成回路２３０からＰＷＭ（Ｐｕｌｓｅ Ｗｉｄｔｈ Ｍｏｄｕｌａｔｉｏｎ）信号Ｓ１，Ｓ２をそれぞれ受け、そのＰＷＭ信号Ｓ１，Ｓ２に基づいてそれぞれパワートランジスタＱ１，Ｑ２のスイッチング動作を行なう。   Drivers 271 and 272 receive PWM (Pulse Width Modulation) signals S1 and S2 from signal generation circuit 230, respectively, and perform switching operations of power transistors Q1 and Q2 based on the PWM signals S1 and S2, respectively.

コンバータ２１０においては、リアクトルＬ１は、パワートランジスタＱ２のスイッチング動作に応じてコイルに流される電流を磁場エネルギーとして蓄積することによってバッテリ２００からの直流電圧を昇圧し、その昇圧された直流電圧をパワートランジスタＱ２がオフされたタイミングに同期して逆並列ダイオードＤ１を介して電源ライン２９２に供給する。   In converter 210, reactor L1 boosts the DC voltage from battery 200 by accumulating the current flowing through the coil as magnetic field energy in accordance with the switching operation of power transistor Q2, and the boosted DC voltage is used as the power transistor. The power is supplied to the power supply line 292 through the antiparallel diode D1 in synchronization with the timing when Q2 is turned off.

平滑コンデンサＣ１は、電源ライン２９１と接地ライン２９３との間に接続され、電圧変動に起因するバッテリ２００およびコンバータ２１０に対しての影響を低減する。   Smoothing capacitor C1 is connected between power supply line 291 and ground line 293, and reduces the influence on battery 200 and converter 210 due to voltage fluctuation.

インバータ２２０を構成するパワートランジスタＱ３〜Ｑ８は、パワートランジスタＱ１，Ｑ２と同様に、たとえば、ＩＧＢＴからなる。パワートランジスタＱ３，Ｑ４は、Ｕ相アーム２８１を構成し、パワートランジスタＱ５，Ｑ６は、Ｖ相アーム２８２を構成し、パワートランジスタＱ７，Ｑ８は、Ｗ相アーム２８３を構成し、Ｕ相アーム２８１、Ｖ相アーム２８２およびＷ相アーム２８３は、電源ライン２９２と接地ライン２９３との間に並列に接続される。また、各パワートランジスタＱ３〜Ｑ８のコレクタ−エミッタ間には、エミッタ側からコレクタ側へ電流を流す逆並列ダイオードＤ３〜Ｄ８がそれぞれ接続されている。   Similarly to power transistors Q1 and Q2, power transistors Q3 to Q8 constituting inverter 220 are made of IGBT, for example. Power transistors Q3 and Q4 constitute a U-phase arm 281; power transistors Q5 and Q6 constitute a V-phase arm 282; power transistors Q7 and Q8 constitute a W-phase arm 283; V-phase arm 282 and W-phase arm 283 are connected in parallel between power supply line 292 and ground line 293. Further, anti-parallel diodes D3 to D8 that flow current from the emitter side to the collector side are connected between the collectors and emitters of the power transistors Q3 to Q8, respectively.

ドライバ２７３〜２７８は、信号生成回路２４０からＰＷＭ信号Ｓ３〜Ｓ８をそれぞれ受け、そのＰＷＭ信号Ｓ３〜Ｓ８に基づいてそれぞれパワートランジスタＱ３〜Ｑ８のスイッチング動作を行なう。   Drivers 273 to 278 receive PWM signals S3 to S8 from signal generation circuit 240, respectively, and perform switching operations of power transistors Q3 to Q8 based on the PWM signals S3 to S8, respectively.

そして、各相アームにおける各パワートランジスタの接続点は、回転機Ｍ１の各相コイルの各相端に接続されている。すなわち、回転機Ｍ１は、Ｕ，Ｖ，Ｗ相の３つのコイルの一端が中点に共通接続されて構成され、パワートランジスタＱ３，Ｑ４の接続点にＵ相コイルの他端が接続され、パワートランジスタＱ５，Ｑ６の接続点にＶ相コイルの他端が接続され、パワートランジスタＱ７，Ｑ８の接続点にＷ相コイルの他端が接続されている。   And the connection point of each power transistor in each phase arm is connected to each phase end of each phase coil of rotating machine M1. That is, the rotating machine M1 is configured such that one end of three coils of U, V, and W phases is commonly connected to the middle point, and the other end of the U phase coil is connected to the connection point of the power transistors Q3 and Q4. The other end of the V-phase coil is connected to the connection point of the transistors Q5 and Q6, and the other end of the W-phase coil is connected to the connection point of the power transistors Q7 and Q8.

平滑コンデンサＣ２は、電源ライン２９２と接地ライン２９３との間に接続され、電圧変動に起因するインバータ２２０およびコンバータ２１０に対しての影響を低減する。   Smoothing capacitor C2 is connected between power supply line 292 and ground line 293, and reduces the influence on inverter 220 and converter 210 due to voltage fluctuation.

信号生成回路２３０は、制御回路２５０によって算出されたパワートランジスタＱ１，Ｑ２のデューティ比の演算結果を制御回路２５０から受け、パワートランジスタＱ１，Ｑ２をオン／オフするＰＷＭ信号Ｓ１，Ｓ２を生成してそれぞれコンバータ２１０のドライバ２７１，２７２へ出力する。   The signal generation circuit 230 receives the calculation result of the duty ratio of the power transistors Q1 and Q2 calculated by the control circuit 250 from the control circuit 250, and generates PWM signals S1 and S2 for turning on / off the power transistors Q1 and Q2. Output to the drivers 271 and 272 of the converter 210, respectively.

信号生成回路２４０は、制御回路２５０によって算出された各相の電圧演算結果を制御回路２５０から受け、パワートランジスタＱ３〜Ｑ８をオン／オフするＰＷＭ信号Ｓ３〜Ｓ８を生成してそれぞれインバータ２２０のドライバ２７３〜２７８へ出力する。   The signal generation circuit 240 receives the voltage calculation result of each phase calculated by the control circuit 250 from the control circuit 250, generates PWM signals S3 to S8 for turning on / off the power transistors Q3 to Q8, and each driver of the inverter 220 273 to 278.

制御回路２５０は、モータトルク指令値、回転機Ｍ１の各相の電流値、およびインバータ２２０の入力電圧を入力して回転機Ｍ１の各相コイルの電圧を演算し、その演算結果を信号生成回路２４０へ出力する。回転機Ｍ１の各相の電流値は、電流センサ２６０により検出され、インバータ２２０の入力電圧は、図示されない電圧センサにより検出される。   The control circuit 250 inputs the motor torque command value, the current value of each phase of the rotating machine M1, and the input voltage of the inverter 220, calculates the voltage of each phase coil of the rotating machine M1, and calculates the calculation result as a signal generation circuit. Output to 240. The current value of each phase of the rotating machine M1 is detected by the current sensor 260, and the input voltage of the inverter 220 is detected by a voltage sensor (not shown).

また、制御回路２５０は、上述したモータトルク指令値およびモータ回転数を入力してインバータ２２０の入力電圧の最適値（目標値）を演算する。そして、制御回路２５０は、この入力電圧の目標値、インバータ２２０の入力電圧、およびバッテリ２００の電圧に基づいて、インバータ２２０の入力電圧をその目標値にするためのパワートランジスタＱ１，Ｑ２のデューティ比を演算し、その演算結果を信号生成回路２３０へ出力する。   In addition, the control circuit 250 calculates the optimum value (target value) of the input voltage of the inverter 220 by inputting the motor torque command value and the motor rotation speed described above. Based on the target value of the input voltage, the input voltage of the inverter 220, and the voltage of the battery 200, the control circuit 250 uses the duty ratios of the power transistors Q1 and Q2 for setting the input voltage of the inverter 220 to the target value. And the calculation result is output to the signal generation circuit 230.

この負荷駆動装置１００においては、チョッパ式のコンバータ２１０は、信号生成回路２３０からの指令に基づいて、バッテリ２００から受ける直流電圧を昇圧して電源ライン２９２に供給する。そして、インバータ２２０は、平滑コンデンサＣ２によって平滑化された直流電圧を電源ライン２９２から受け、その受けた直流電圧を交流電圧に変換して回転機Ｍ１へ出力する。   In the load driving device 100, the chopper converter 210 boosts the DC voltage received from the battery 200 based on a command from the signal generation circuit 230 and supplies it to the power supply line 292. Inverter 220 receives the DC voltage smoothed by smoothing capacitor C2 from power supply line 292, converts the received DC voltage into an AC voltage, and outputs the AC voltage to rotating machine M1.

また、インバータ２２０は、回転機Ｍ１によって発電された交流電圧を直流電圧に変換して電源ライン２９２へ出力する。そして、コンバータ２１０は、平滑コンデンサＣ２によって平滑化された直流電圧を電源ライン２９２から受け、その受けた直流電圧を降圧してバッテリ２００へ供給する。   The inverter 220 converts the AC voltage generated by the rotating machine M1 into a DC voltage and outputs the DC voltage to the power line 292. Converter 210 receives the DC voltage smoothed by smoothing capacitor C <b> 2 from power supply line 292, steps down the received DC voltage, and supplies it to battery 200.

このように、負荷駆動装置１００は、バッテリ２００からの直流電圧を昇圧して回転機Ｍ１を駆動するとともに、回転機Ｍ１によって発電された電力をバッテリ２００へ供給する。   As described above, the load driving device 100 boosts the DC voltage from the battery 200 to drive the rotating machine M1, and supplies the battery 200 with the electric power generated by the rotating machine M1.

図２は、図１に示された実施の形態１におけるインバータ２２０のＵ相上アームの構造を示す断面図である。なお、図１に示されたインバータ２２０の各相における上下各アームおよびコンバータ２１０の上下各アームの構造も、図２に示すアームの構造と同じであるので、説明は繰り返さない。   FIG. 2 is a cross-sectional view showing the structure of the U-phase upper arm of inverter 220 in the first embodiment shown in FIG. Since the structures of the upper and lower arms in each phase of inverter 220 and the upper and lower arms of converter 210 shown in FIG. 1 are the same as the structures of the arms shown in FIG. 2, the description thereof will not be repeated.

図２を参照して、このＵ相上アームは、上述したパワートランジスタＱ３および逆並列ダイオードＤ３と、スペーサ３２２，３２４と、電極基板３０２，３０４と、絶縁シート３０８，３１０と、放熱板３１２，３１４と、冷却器３１６，３１８と、モールド樹脂３２０と、信号電極板３０６と、ワイヤ３２８とを備える。   Referring to FIG. 2, this U-phase upper arm includes power transistor Q3 and antiparallel diode D3, spacers 322 and 324, electrode substrates 302 and 304, insulating sheets 308 and 310, heat sinks 312 and 314, coolers 316, 318, mold resin 320, signal electrode plate 306, and wire 328.

パワートランジスタＱ３は、半田などの導電性接合材３２６によってエミッタ側が電極基板３０２上に固設され、電極基板３０２と電気的に接続される。スペーサ３２２は、ワイヤ３２８が電極基板３０４と接触するのを防止するために電極基板３０２，３０４の間隔を確保する。スペーサ３２２は、導電体からなり、導電性接合材３２６によってパワートランジスタＱ３上のコレクタ部に固設され、その接合部と対向する側が導電性接合材３２６によって電極基板３０４に固設される。したがって、パワートランジスタＱ３は、電極基板３０４とも電気的に接続される。   The power transistor Q3 has its emitter side fixed on the electrode substrate 302 by a conductive bonding material 326 such as solder and is electrically connected to the electrode substrate 302. The spacer 322 secures the space between the electrode substrates 302 and 304 in order to prevent the wire 328 from coming into contact with the electrode substrate 304. The spacer 322 is made of a conductor, and is fixed to the collector portion on the power transistor Q3 by the conductive bonding material 326, and the side facing the bonding portion is fixed to the electrode substrate 304 by the conductive bonding material 326. Therefore, the power transistor Q3 is also electrically connected to the electrode substrate 304.

逆並列ダイオードＤ３は、導電性接合材３２６によってアノード側が電極基板３０２上に固設され、電極基板３０２と電気的に接続される。スペーサ３２４は、電極基板３０２，３０４の平衡状態を保つためにスペーサ３２２に対応して設けられる。スペーサ３２４も、スペーサ３２２と同様に導電体からなり、導電性接合材３２６によって逆並列ダイオードＤ３上のカソード側に固設され、その接合部と対向する側が導電性接合材３２６によって電極基板３０４に固設される。したがって、逆並列ダイオードＤ３は、電極基板３０４とも電気的に接続される。   The antiparallel diode D <b> 3 is fixed on the electrode substrate 302 by the conductive bonding material 326 and is electrically connected to the electrode substrate 302. The spacer 324 is provided corresponding to the spacer 322 in order to keep the electrode substrates 302 and 304 in an equilibrium state. The spacer 324 is also made of a conductor, like the spacer 322, and is fixed to the cathode side on the antiparallel diode D 3 by the conductive bonding material 326, and the side facing the bonding portion is formed on the electrode substrate 304 by the conductive bonding material 326. It is fixed. Therefore, the antiparallel diode D3 is also electrically connected to the electrode substrate 304.

電極基板３０２，３０４は、たとえば銅などからなる導電性基板であって、パワートランジスタＱ３およびスペーサ３２２ならびに逆並列ダイオードＤ３およびスペーサ３２４を挟み込むように平行に設けられる。電極基板３０２，３０４は、外部へ突出した接続部を有しており、この接続部を介して図１に示したＵ相出力ライン２９４および電源ライン２９２とそれぞれ接続される。   The electrode substrates 302 and 304 are conductive substrates made of copper or the like, for example, and are provided in parallel so as to sandwich the power transistor Q3, the spacer 322, the antiparallel diode D3, and the spacer 324. The electrode substrates 302 and 304 have connecting portions protruding to the outside, and are connected to the U-phase output line 294 and the power supply line 292 shown in FIG. 1 through the connecting portions, respectively.

絶縁シート３０８，３１０は、それぞれ電極基板３０２，３０４における素子実装面と対向する面を被うように設けられ、電極基板３０２，３０４を放熱板３１２，３１４とそれぞれ電気的に絶縁する。一方、絶縁シート３０８，３１０は、たとえばアルミナなどの高熱伝導率を有するフィラーを含有しており、パワートランジスタＱ３および逆並列ダイオードＤ３から電極基板３０２，３０４に伝わった熱をそれぞれ放熱板３１２，３１４へ伝熱する。   The insulating sheets 308 and 310 are provided so as to cover the surfaces of the electrode substrates 302 and 304 facing the element mounting surfaces, respectively, and electrically insulate the electrode substrates 302 and 304 from the heat sinks 312 and 314, respectively. On the other hand, the insulating sheets 308 and 310 contain a filler having high thermal conductivity such as alumina, for example, and the heat transmitted from the power transistor Q3 and the antiparallel diode D3 to the electrode substrates 302 and 304 is respectively radiated from the heat sinks 312 and 314. Heat is transferred to

放熱板３１２，３１４は、たとえば、高熱伝導性を有する銅などからなり、それぞれ絶縁シート３０８，３１０に密接して設けられる。放熱板３１２，３１４は、それぞれ電極基板３０２，３０４から絶縁シート３０８，３１０を介して受けた熱を放熱板３１２，３１４の平面方向に拡散させて冷却器３１６，３１８へ放熱する。これによって、放熱板３１２，３１４からそれぞれに対応する冷却器３１６，３１８へ伝熱する際に熱の集中部の発生が抑制され、冷却器３１６，３１８へ効率的に放熱される。   The radiator plates 312 and 314 are made of, for example, copper having high thermal conductivity, and are provided in close contact with the insulating sheets 308 and 310, respectively. The heat radiating plates 312 and 314 dissipate heat received from the electrode substrates 302 and 304 via the insulating sheets 308 and 310 in the plane direction of the heat radiating plates 312 and 314 and dissipate the heat to the coolers 316 and 318, respectively. As a result, when heat is transferred from the heat radiating plates 312 and 314 to the corresponding coolers 316 and 318, the generation of heat concentration portions is suppressed, and heat is efficiently radiated to the coolers 316 and 318.

冷却器３１６，３１８は、放熱板３１２，３１４における絶縁シート３０８，３１０との接合面と対向する面に密接して設けられ、それぞれ内部に複数の冷媒路３１７，３１９を含む。放熱板３１２，３１４とそれぞれに対応する冷却器３１６，３１８との各接合面には、接触熱抵抗を低減するためにグリスが塗布される。   The coolers 316 and 318 are provided in close contact with the surfaces of the heat radiating plates 312 and 314 facing the bonding surfaces with the insulating sheets 308 and 310, and include a plurality of refrigerant paths 317 and 319, respectively. Grease is applied to the joint surfaces of the heat sinks 312 and 314 and the corresponding coolers 316 and 318 in order to reduce the contact thermal resistance.

信号電極板３０６は、導電性のワイヤ３２８を介してパワートランジスタＱ３のベース部と電気的に接続される。また、信号電極板３０６は、外部へ突出しており、図１に示したドライバ２７３と接続される。   The signal electrode plate 306 is electrically connected to the base portion of the power transistor Q3 through the conductive wire 328. The signal electrode plate 306 protrudes to the outside and is connected to the driver 273 shown in FIG.

モールド樹脂３２０は、たとえば、エポキシ樹脂などであって、パワートランジスタＱ３、逆並列ダイオードＤ３、電極基板３０２，３０４、絶縁シート３０８，３１０、放熱板３１２，３１４、信号電極板３０６、およびワイヤ３２８を冷却板３１６，３１８で挟み込まれる領域内で封止する。   The mold resin 320 is, for example, an epoxy resin, and includes a power transistor Q3, an antiparallel diode D3, electrode substrates 302 and 304, insulating sheets 308 and 310, heat radiation plates 312 and 314, a signal electrode plate 306, and wires 328. Sealing is performed in a region sandwiched between the cooling plates 316 and 318.

なお、このモールド樹脂３２０は、「樹脂モールド材」を構成し、図２に示される冷却器３１６，３１８を除く部分は、「半導体モジュール」を構成する。   The mold resin 320 constitutes a “resin mold material”, and the portions excluding the coolers 316 and 318 shown in FIG. 2 constitute a “semiconductor module”.

ここで、この実施の形態１においては、電極基板３０２，３０４における絶縁シート３０８，３１０との接合面の外形寸法は、放熱板３１２，３１４における絶縁シート３０８，３１０との接合面の外形寸法よりも大きく設計されている。したがって、図に示されるように、電極基板３０２，３０４における素子実装面と対向する非実装面側にモールド樹脂３２０が回り込んだ構成となっている。   Here, in the first embodiment, the outer dimensions of the bonding surfaces of the electrode substrates 302 and 304 with the insulating sheets 308 and 310 are larger than the outer dimensions of the bonding surfaces of the heat radiation plates 312 and 314 with the insulating sheets 308 and 310. Is also designed to be large. Therefore, as shown in the drawing, the mold resin 320 is configured to wrap around the non-mounting surface side of the electrode substrates 302 and 304 facing the element mounting surface.

これによって、発熱により各部が熱膨張したとき、図中の矢印で示されるように、モールド樹脂３２０が電極基板３０２，３０４を押付け、パワートランジスタＱ３、逆並列ダイオードＤ３、および導電性接合材３２６からなる素子部を電極基板３０２，３０４が両側から押付ける。したがって、この押付力により、パワートランジスタＱ３および逆並列ダイオードＤ３と電極基板３０２，３０４との熱膨張差により発生する歪みが抑制される。   As a result, when each part is thermally expanded due to heat generation, as indicated by the arrows in the figure, the mold resin 320 presses the electrode substrates 302 and 304, and from the power transistor Q3, the antiparallel diode D3, and the conductive bonding material 326, The electrode substrate 302, 304 presses the element portion to be formed from both sides. Therefore, this pressing force suppresses distortion caused by the difference in thermal expansion between the power transistor Q3 and antiparallel diode D3 and the electrode substrates 302 and 304.

また、この実施の形態１においては、パワー半導体素子、電極基板３０２，３０４および放熱板３１２，３１４の連設方向におけるモールド樹脂３２０の端面は、それぞれ放熱板３１２，３１４における冷却器３１６，３１８との接合面よりも少なくとも突出しないように構成されている。   In the first embodiment, the end surfaces of the mold resin 320 in the connecting direction of the power semiconductor element, the electrode substrates 302 and 304 and the heat sinks 312 and 314 are the coolers 316 and 318 in the heat sinks 312 and 314, respectively. It is comprised so that it may not protrude at least rather than the joint surface.

これにより、放熱板３１２，３１４における冷却器３１６，３１８と対向する面が露出し、放熱板３１２，３１４とそれぞれに対応する冷却器３１６，３１８との接触が確保され、その接合部における熱抵抗の増大が防止される。   As a result, the surfaces of the heat radiating plates 312 and 314 facing the coolers 316 and 318 are exposed, and contact between the heat radiating plates 312 and 314 and the corresponding coolers 316 and 318 is ensured. Is prevented from increasing.

以上のように、この実施の形態１によれば、電極基板３０２，３０４と放熱板３１２，３１４との接合部において、電極基板３０２，３０４の外形寸法を放熱板３１２，３１４の外形寸法よりも大きくすることによって電極基板３０２，３０４における非素子実装面側にモールド樹脂３２０を回り込ませ、これによって電極基板３０２，３０４からパワートランジスタおよび逆並列ダイオードへ押付力が発生するようにしたので、パワートランジスタおよび逆並列ダイオードと電極基板３０２，３０４との各接合部における歪みが抑制される。したがって、導電性接合材３２６におけるクラックの発生を防止でき、負荷駆動装置１００の信頼性が向上する。   As described above, according to the first embodiment, the outer dimensions of the electrode substrates 302 and 304 are made larger than the outer dimensions of the heat sinks 312 and 314 at the joints between the electrode substrates 302 and 304 and the heat sinks 312 and 314. Since the mold resin 320 is made to wrap around the non-element mounting surface side of the electrode substrates 302 and 304 by increasing the size, a pressing force is generated from the electrode substrates 302 and 304 to the power transistor and the antiparallel diode. In addition, distortion at each junction between the antiparallel diode and the electrode substrates 302 and 304 is suppressed. Therefore, the occurrence of cracks in the conductive bonding material 326 can be prevented, and the reliability of the load driving device 100 is improved.

また、この実施の形態１によれば、放熱板３１２，３１４とそれぞれに対応する冷却器３１６，３１８との接触をモールド樹脂３２０が阻害しないようにしたので、放熱板３１２，３１４からそれぞれに対応する冷却器３１６，３１８への放熱性が確保される。さらに、パワートランジスタおよび逆並列ダイオードの両面から放熱されるので、放熱性がさらに向上する。   Further, according to the first embodiment, since the mold resin 320 does not obstruct the contact between the heat sinks 312 and 314 and the corresponding coolers 316 and 318, the heat sinks 312 and 314 are respectively supported. The heat dissipation to the coolers 316 and 318 is ensured. Furthermore, since heat is radiated from both surfaces of the power transistor and the antiparallel diode, the heat dissipation is further improved.

［実施の形態２］
実施の形態２における負荷駆動装置の主要部の回路構成は、図１に示した構成と同じである。 [Embodiment 2]
The circuit configuration of the main part of the load driving device in the second embodiment is the same as the configuration shown in FIG.

図３は、実施の形態２におけるインバータのＵ相上アームの構造を示す断面図である。なお、負荷駆動装置におけるインバータおよびコンバータを構成するその他の上下各アームの構造も、図３に示すアームの構造と同じであるので、説明は繰り返さない。   FIG. 3 is a cross-sectional view showing the structure of the U-phase upper arm of the inverter according to the second embodiment. Since the structure of the other upper and lower arms constituting the inverter and converter in the load driving device is also the same as the structure of the arm shown in FIG. 3, description thereof will not be repeated.

図３を参照して、実施の形態２におけるＵ相上アームは、実施の形態１における各アームの構成において、電極基板３０２，３０４に代えて電極基板３０２Ａ，３０４Ａを備える。実施の形態２におけるＵ相上アームのその他の構成は、実施の形態１における各アームの構成と同じである。   Referring to FIG. 3, the U-phase upper arm in the second embodiment includes electrode substrates 302A and 304A in place of electrode substrates 302 and 304 in the configuration of each arm in the first embodiment. The other configuration of the U-phase upper arm in the second embodiment is the same as the configuration of each arm in the first embodiment.

電極基板３０２Ａ，３０４Ａは、たとえば銅などからなる導電性基板であって、パワートランジスタＱ３およびスペーサ３２２ならびに逆並列ダイオードＤ３およびスペーサ３２４を挟み込むように平行に設けられる。電極基板３０２Ａ，３０４Ａは、外部へ突出しており、図示されないＵ相出力ラインおよび電源ラインとそれぞれ接続される。   The electrode substrates 302A and 304A are conductive substrates made of copper or the like, for example, and are provided in parallel so as to sandwich the power transistor Q3, the spacer 322, the antiparallel diode D3, and the spacer 324. Electrode substrates 302A and 304A protrude to the outside and are respectively connected to a U-phase output line and a power supply line (not shown).

この実施の形態２においても、電極基板３０２Ａ，３０４Ａにおける素子実装面と対向する非実装面側にモールド樹脂３２０が回り込む構成となっているので、発熱により各部が熱膨張したとき、図中の矢印で示されるように、モールド樹脂３２０が電極基板３０２Ａ，３０４Ａを押付け、パワートランジスタＱ３、逆並列ダイオードＤ３、および導電性接合材３２６からなる素子部を電極基板３０２Ａ，３０４Ａが両側から押付ける。したがって、この実施の形態２によっても、この押付力により、パワートランジスタＱ３および逆並列ダイオードＤ３と電極基板３０２Ａ，３０４Ａとの熱膨張差により発生する歪みが抑制される。   Also in the second embodiment, since the mold resin 320 wraps around the non-mounting surface side facing the element mounting surface of the electrode substrates 302A and 304A, when each part is thermally expanded by heat generation, the arrows in the figure As shown, the mold resin 320 presses the electrode substrates 302A and 304A, and the electrode substrate 302A and 304A presses the element portion including the power transistor Q3, the antiparallel diode D3, and the conductive bonding material 326 from both sides. Therefore, also in the second embodiment, this pressing force suppresses distortion caused by the difference in thermal expansion between power transistor Q3 and antiparallel diode D3 and electrode substrates 302A and 304A.

ここで、この実施の形態２における電極基板３０２Ａ，３０４Ａは、図２に示した実施の形態１における電極基板３０２，３０４のような厚みを有しておらず、パワートランジスタＱ３および逆並列ダイオードＤ３からの熱は、電極基板３０２Ａ，３０４Ａにおいて平面方向に十分に拡散されずに絶縁シート３０８，３１０へ伝達される。   Here, the electrode substrates 302A and 304A in the second embodiment do not have the same thickness as the electrode substrates 302 and 304 in the first embodiment shown in FIG. 2, but the power transistor Q3 and the antiparallel diode D3. Heat is transferred to the insulating sheets 308 and 310 without being sufficiently diffused in the plane direction on the electrode substrates 302A and 304A.

しかしながら、絶縁シート３０８，３１０と冷却器３１６，３１８との間にはそれぞれ放熱板３１２，３１４が設けられ、この放熱板３１２，３１４において平面方向に熱が拡散するので、冷却器３１６，３１８への伝熱の際に熱の集中部が発生することはない。したがって、電極基板３０２Ａ，３０４Ａを薄板で構成しても、放熱性が低下することはなく、その一方で、電極基板３０２Ａ，３０４Ａを薄板で構成することによる装置の小型化という効果が得られる。   However, heat radiation plates 312 and 314 are provided between the insulating sheets 308 and 310 and the coolers 316 and 318, respectively, and heat is diffused in the plane direction in the heat radiation plates 312 and 314. No heat concentration occurs during heat transfer. Therefore, even if the electrode substrates 302A and 304A are made of a thin plate, the heat dissipation performance is not lowered. On the other hand, the effect of downsizing the apparatus can be obtained by forming the electrode substrates 302A and 304A with a thin plate.

以上のように、この実施の形態２によれば、実施の形態１と同様の効果が得られるほか、電極基板３０２Ａ，３０４Ａを薄板化することによって装置を小型化できる。   As described above, according to the second embodiment, the same effect as in the first embodiment can be obtained, and the apparatus can be miniaturized by thinning the electrode substrates 302A and 304A.

［実施の形態３］
実施の形態３における負荷駆動装置の主要部の回路構成も、図１に示した構成と同じである。 [Embodiment 3]
The circuit configuration of the main part of the load driving device in the third embodiment is also the same as the configuration shown in FIG.

図４は、実施の形態３におけるインバータのＵ相上アームの構造を示す断面図である。なお、負荷駆動装置におけるインバータおよびコンバータを構成するその他の上下各アームの構造も、図４に示すアームの構造と同じであるので、説明は繰り返さない。   FIG. 4 is a cross-sectional view showing the structure of the U-phase upper arm of the inverter according to the third embodiment. The other upper and lower arms constituting the inverter and the converter in the load driving device are also the same as the arm shown in FIG.

図４を参照して、実施の形態３におけるＵ相上アームは、実施の形態１における各アームの構成において、放熱板３１２，３１４に代えて放熱板３１２Ａ，３１４Ａを備える。実施の形態３におけるＵ相上アームのその他の構成は、実施の形態１における各アームの構成と同じである。   Referring to FIG. 4, the U-phase upper arm in the third embodiment includes heat radiating plates 312A and 314A in place of heat radiating plates 312 and 314 in the configuration of each arm in the first embodiment. The other configuration of the U-phase upper arm in the third embodiment is the same as the configuration of each arm in the first embodiment.

放熱板３１２Ａ，３１４Ａは、たとえば、高熱伝導性を有する銅などからなり、それぞれ絶縁シート３０８，３１０に密接して設けられる。そして、この放熱板３１２Ａ，３１４Ａも、放熱板３１２，３１４と同様に、それぞれ電極基板３０２，３０４から絶縁シート３０８，３１０を介して受けた熱を放熱板３１２Ａ，３１４Ａの平面方向に拡散させて冷却器３１６，３１８へ放熱する。これによって、放熱板３１２Ａ，３１４Ａからそれぞれに対応する冷却器３１６，３１８へ伝熱する際に熱の集中部の発生が抑制され、冷却器３１６，３１８へ効率的に放熱される。   The radiator plates 312A and 314A are made of, for example, copper having high thermal conductivity, and are provided in close contact with the insulating sheets 308 and 310, respectively. And, similarly to the heat sinks 312 and 314, the heat sinks 312A and 314A diffuse the heat received from the electrode substrates 302 and 304 via the insulating sheets 308 and 310 in the plane direction of the heat sinks 312A and 314A, respectively. Heat is dissipated to the coolers 316 and 318. As a result, when heat is transferred from the heat radiating plates 312A and 314A to the corresponding coolers 316 and 318, generation of heat concentrating portions is suppressed, and heat is efficiently radiated to the coolers 316 and 318.

この実施の形態３における放熱板３１２Ａ，３１４Ａが実施の形態１における放熱板３１２，３１４と異なる点は、放熱板３１２Ａ，３１４Ａにおける絶縁シート３０８，３１０との接合面の外形寸法が冷却器３１６，３１８との接合面の外形寸法よりも大きく、たとえば、図に示されるように、絶縁シート３０８，３１０の外形寸法すなわち電極基板３０２，３０４の外形寸法と同じ外形寸法を有することである。   The heat dissipating plates 312A and 314A in the third embodiment are different from the heat dissipating plates 312 and 314 in the first embodiment in that the outer dimensions of the joint surfaces of the heat dissipating plates 312A and 314A with the insulating sheets 308 and 310 are the coolers 316 and 316. For example, as shown in the drawing, the outer dimensions of the insulating sheets 308 and 310, that is, the outer dimensions of the electrode substrates 302 and 304 are the same.

したがって、この実施の形態３によれば、放熱板３１２Ａ，３１４Ａとそれぞれに対応する絶縁シート３０８，３１０との接合面、および絶縁シート３０８，３１０とそれぞれに対応する電極基板３０２，３０４との接合面にもモールド樹脂３２０による押付力が発生し、これらの各接合面の密着性が向上する。その結果、これらの各接合面における接触熱抵抗が低減され、放熱性が向上する。   Therefore, according to the third embodiment, the joining surfaces of the heat dissipating plates 312A and 314A and the corresponding insulating sheets 308 and 310 and the joining of the insulating sheets 308 and 310 to the corresponding electrode substrates 302 and 304, respectively. A pressing force by the mold resin 320 is also generated on the surface, and the adhesion of each of these joint surfaces is improved. As a result, the contact thermal resistance at each joint surface is reduced, and the heat dissipation is improved.

［実施の形態４］
実施の形態４における負荷駆動装置の主要部の回路構成も、図１に示した構成と同じである。 [Embodiment 4]
The circuit configuration of the main part of the load driving device in the fourth embodiment is also the same as the configuration shown in FIG.

図５は、実施の形態４におけるインバータのＵ相上アームの構造を示す断面図である。なお、負荷駆動装置におけるインバータおよびコンバータを構成するその他の上下各アームの構造も、図５に示すアームの構造と同じであるので、説明は繰り返さない。   FIG. 5 is a cross-sectional view showing the structure of the U-phase upper arm of the inverter according to the fourth embodiment. The other upper and lower arms constituting the inverter and the converter in the load driving device are also the same as the arms shown in FIG.

図５を参照して、実施の形態４におけるＵ相上アームは、実施の形態１における各アームの構成において、放熱板３１２，３１４に代えて放熱板３１２Ｂ，３１４Ｂを備える。実施の形態４におけるＵ相上アームのその他の構成は、実施の形態１における各アームの構成と同じである。   Referring to FIG. 5, the U-phase upper arm in the fourth embodiment includes heat radiating plates 312B and 314B in place of heat radiating plates 312 and 314 in the configuration of each arm in the first embodiment. The other configuration of the U-phase upper arm in the fourth embodiment is the same as the configuration of each arm in the first embodiment.

放熱板３１２Ｂ，３１４Ｂも、たとえば、高熱伝導性を有する銅などからなり、それぞれ絶縁シート３０８，３１０に密接して設けられる。そして、この放熱板３１２Ｂ，３１４Ｂも、それぞれ電極基板３０２，３０４から絶縁シート３０８，３１０を介して受けた熱を放熱板３１２Ｂ，３１４Ｂの平面方向に拡散させて冷却器３１６，３１８へ放熱する。これによって、放熱板３１２Ｂ，３１４Ｂからそれぞれに対応する冷却器３１６，３１８へ伝熱する際に熱の集中部の発生が抑制され、冷却器３１６，３１８へ効率的に放熱される。   The heat radiating plates 312B and 314B are also made of, for example, copper having high thermal conductivity, and are provided in close contact with the insulating sheets 308 and 310, respectively. The heat radiating plates 312B and 314B also dissipate heat received from the electrode substrates 302 and 304 via the insulating sheets 308 and 310 in the plane direction of the heat radiating plates 312B and 314B, respectively, and dissipate the heat to the coolers 316 and 318. As a result, when heat is transferred from the heat radiating plates 312B and 314B to the corresponding coolers 316 and 318, generation of heat concentration portions is suppressed, and heat is efficiently radiated to the coolers 316 and 318.

この実施の形態４における放熱板３１２Ｂ，３１４Ｂにおいては、実施の形態３における放熱板３１２Ａ，３１４Ａの構造とは反対に、放熱板３１２Ｂ，３１４Ｂにおける冷却器３１６，３１８との接合面の外形寸法が絶縁シート３０８，３１０との接合面の外形寸法よりも大きく、かつ、電極基板３０２，３０４における絶縁シート３０８，３１０との接合面の外形寸法が放熱板３１２Ｂ，３１４Ｂにおける絶縁シート３０８，３１０との接合面の外形寸法よりも大きい。   In the heat sinks 312B and 314B in the fourth embodiment, the outer dimensions of the joint surfaces of the heat sinks 312B and 314B with the coolers 316 and 318 are opposite to the structure of the heat sinks 312A and 314A in the third embodiment. The outer dimension of the bonding surface with the insulating sheets 308 and 310 is larger than the outer dimension of the bonding surface with the insulating sheets 308 and 310 of the electrode substrates 302 and 304, and the outer dimension of the insulating sheets 308 and 310 with the heat sinks 312B and 314B. It is larger than the outer dimension of the joint surface.

したがって、この実施の形態４によれば、電極基板３０２，３０４からパワートランジスタおよび逆並列ダイオードへ押付力を確保しつつ、放熱板３１２Ｂ，３１４Ｂにおける冷却器３１６，３１８との接合部側の面積を実施の形態１に比べて大きくしたので、放熱板３１２Ｂ，３１４Ｂにおいて平面方向のより広い範囲に熱が拡散し、放熱板３１２Ｂ，３１４Ｂからそれぞれに対応する冷却器３１６，３１８へより効率的に放熱することができる。   Therefore, according to the fourth embodiment, the area on the joint portion side with the coolers 316 and 318 in the heat radiation plates 312B and 314B is secured while ensuring the pressing force from the electrode substrates 302 and 304 to the power transistor and the antiparallel diode. Since it is larger than that in the first embodiment, heat is diffused in a wider range in the plane direction in the heat radiating plates 312B and 314B, and heat is efficiently radiated from the heat radiating plates 312B and 314B to the corresponding coolers 316 and 318, respectively. can do.

なお、上記の各実施の形態においては、モールド樹脂３２０として熱硬化性のエポキシ樹脂が用いられる場合を代表的に説明したが、モールド樹脂３２０は、エポキシ樹脂に限定されるものではなく、その他の熱硬化性樹脂や熱可塑性樹脂であってもよい。   In each of the above embodiments, the case where a thermosetting epoxy resin is used as the mold resin 320 has been described as a representative. However, the mold resin 320 is not limited to the epoxy resin, and other A thermosetting resin or a thermoplastic resin may be used.

また、上記の各実施の形態においては、いずれもモールド樹脂３２０が「押付手段」を構成するものとしたが、押付手段として電極基板３０２，３０４（３０２Ａ，３０４Ａ）を固定または狭圧する部材を別途設けてもよい。なお、この場合は、歪みを抑制できるという効果の反面、その部材分および組付工数分のコスト増加を招くため、上記の各実施の形態のように、押付手段としてモールド樹脂３２０を利用するのが好ましい。   In each of the above-described embodiments, the mold resin 320 constitutes the “pressing means”, but a member for fixing or narrowing the electrode substrates 302 and 304 (302A and 304A) is separately provided as the pressing means. It may be provided. In this case, although the effect of suppressing the distortion is caused, the cost for the member and the assembly man-hour is increased, so that the mold resin 320 is used as the pressing means as in each of the above embodiments. Is preferred.

また、上記の各実施の形態においては、インバータ２２０およびコンバータ２１０における各アームを構成するパワートランジスタおよび逆並列ダイオードは、モールド樹脂３２０によって各アーム毎に樹脂パッケージ化されるものとして説明したが、たとえば、同相の上下アーム毎、あるいはインバータ全体およびコンバータ全体をそれぞれ共通のモールド樹脂によって樹脂パッケージ化してもよい。   Further, in each of the above embodiments, the power transistor and the antiparallel diode constituting each arm in the inverter 220 and the converter 210 have been described as being resin-packaged for each arm by the mold resin 320. The upper and lower arms in the same phase or the entire inverter and the entire converter may be formed into a resin package using a common mold resin.

また、この発明による負荷駆動装置は、たとえば、近年大きく注目されているハイブリッド自動車（Ｈｙｂｒｉｄ Ｖｅｈｉｃｌｅ）や電気自動車（Ｅｌｅｃｔｒｉｃ Ｖｅｈｉｃｌｅ）などにおいて好適である。すなわち、このような車両システムにおいては、信頼性、小型化、低コストが強く要求されるところ、この負荷駆動装置によれば、上述のように装置の信頼性が向上し、また、小型化によりパワー半導体素子の放熱面積を十分に確保しずらい環境のもとでも高い放熱性を有する。さらに、パワー半導体素子と電極基板との接合部における歪みを抑制するための押付力を発生させる押付手段としてモールド樹脂を用いるので、別途部材を設ける必要はなく、その分のコストの増加はない。   Also, the load driving device according to the present invention is suitable for, for example, a hybrid vehicle and an electric vehicle that have attracted much attention in recent years. That is, in such a vehicle system, reliability, downsizing, and low cost are strongly demanded. According to this load driving device, as described above, the reliability of the device is improved, and further downsizing. It has high heat dissipation even in an environment where it is difficult to secure a sufficient heat dissipation area for the power semiconductor element. Further, since the mold resin is used as the pressing means for generating the pressing force for suppressing the distortion at the joint between the power semiconductor element and the electrode substrate, it is not necessary to provide a separate member, and the cost is not increased accordingly.

また、上記の各実施の形態においては、負荷駆動装置を代表的に例示して説明したが、この発明の適用範囲は、負荷駆動装置に限られるものではなく、たとえば上述の車両システムにおいては、パワー半導体素子が用いられるオルタネータや点火装置、ピエゾ燃料噴射装置にもこの発明を適用することができ、さらには、その他様々な電力システムにおいても適用することができる。   Further, in each of the above embodiments, the load driving device has been exemplified and described. However, the scope of application of the present invention is not limited to the load driving device. For example, in the above-described vehicle system, The present invention can also be applied to alternators, ignition devices, and piezo fuel injection devices using power semiconductor elements, and can also be applied to various other power systems.

今回開示された実施の形態は、すべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は、上記した実施の形態の説明ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。   The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and is intended to include meanings equivalent to the scope of claims for patent and all modifications within the scope.

この発明による負荷駆動装置の主要部の構成を示す回路図である。It is a circuit diagram which shows the structure of the principal part of the load drive device by this invention. 図１に示された実施の形態１におけるインバータのＵ相上アームの構造を示す断面図である。FIG. 2 is a cross-sectional view showing a structure of a U-phase upper arm of the inverter according to the first embodiment shown in FIG. 1. 実施の形態２におけるインバータのＵ相上アームの構造を示す断面図である。FIG. 6 is a cross-sectional view showing a structure of a U-phase upper arm of an inverter according to a second embodiment. 実施の形態３におけるインバータのＵ相上アームの構造を示す断面図である。FIG. 6 is a cross-sectional view showing a structure of a U-phase upper arm of an inverter according to a third embodiment. 実施の形態４におけるインバータのＵ相上アームの構造を示す断面図である。FIG. 10 is a cross-sectional view showing the structure of a U-phase upper arm of an inverter according to a fourth embodiment.

符号の説明Explanation of symbols

１００ 負荷駆動装置、２００ バッテリ、２１０ コンバータ、２２０ インバータ、２３０，２４０ 信号生成回路、２５０ 制御回路、２６０ 電流センサ、２７１〜２７８ ドライバ、２８１ Ｕ相アーム、２８２ Ｖ相アーム、２８３ Ｗ相アーム、２９１，２９２ 電源ライン、２９３ 接地ライン、２９４ Ｕ相出力ライン、２９５ Ｖ相出力ライン、２９６ Ｗ相出力ライン、３０２，３０４，３０２Ａ，３０４Ａ 電極基板、３０６ 信号電極板、３０８，３１０ 絶縁シート、３１２，３１４，３１２Ａ，３１４Ａ，３１２Ｂ，３１４Ｂ 放熱板、３１６，３１８ 冷却器、３１７，３１９ 冷媒路、３２０ モールド樹脂、３２２，３２４ スペーサ、３２６ 導電性接合材、３２８ ワイヤ、Ｃ１，Ｃ２ 平滑コンデンサ、Ｌ１ リアクトル、Ｑ１〜Ｑ８ パワートランジスタ、Ｄ１〜Ｄ８ 逆並列ダイオード、Ｍ１ 回転機。   100 load driving device, 200 battery, 210 converter, 220 inverter, 230, 240 signal generation circuit, 250 control circuit, 260 current sensor, 271-278 driver, 281 U-phase arm, 282 V-phase arm, 283 W-phase arm, 291 , 292 Power line, 293 Ground line, 294 U-phase output line, 295 V-phase output line, 296 W-phase output line, 302, 304, 302A, 304A electrode substrate, 306 signal electrode plate, 308, 310 insulating sheet, 312, 314, 312A, 314A, 312B, 314B Heat sink, 316, 318 Cooler, 317, 319 Refrigerant path, 320 Mold resin, 322, 324 Spacer, 326 Conductive bonding material, 328 Wire, C1, C2 Smooth capacitor, L1 Rear Torr, Q1 to Q8 power transistor, D1 to D8 antiparallel diode, M1 rotating machine.

Claims (9)

半導体素子と、
前記半導体素子を両側から挟み込むように設けられる第１および第２の電極基板と、
前記第１および第２の電極基板を前記半導体素子に押付ける押付手段とを備える半導体モジュール。 A semiconductor element;
First and second electrode substrates provided so as to sandwich the semiconductor element from both sides;
A semiconductor module comprising pressing means for pressing the first and second electrode substrates against the semiconductor element. 前記押付手段は、前記半導体素子ならびに前記第１および第２の電極基板を封止する樹脂モールド材である、請求項１に記載の半導体モジュール。   The semiconductor module according to claim 1, wherein the pressing unit is a resin mold material that seals the semiconductor element and the first and second electrode substrates. 連設される前記第１の電極基板、前記半導体素子、および前記第２の電極基板をさらに両側から挟み込むように設けられる第１および第２の放熱板をさらに備え、
前記第１および第２の電極基板における前記第１および第２の放熱板とそれぞれ対向する第１の面の外形寸法は、前記第１および第２の放熱板における前記第１および第２の電極基板とそれぞれ対向する第２の面の外形寸法よりも大きく、
前記樹脂モールド材は、前記第１および第２の放熱板をさらに封止し、前記第１および第２の面の外形寸法差により前記第１および第２の電極基板における前記半導体素子の実装面と対向する非実装面側に回り込むことによって、前記第１および第２の電極基板を前記半導体素子に押付ける、請求項２に記載の半導体モジュール。 A first and second heat dissipating plate provided so as to sandwich the first electrode substrate, the semiconductor element, and the second electrode substrate that are continuously provided from both sides;
The external dimensions of the first surface of the first and second electrode substrates facing the first and second heat sinks are the first and second electrodes of the first and second heat sinks, respectively. Larger than the outer dimensions of the second surface facing the substrate,
The resin mold material further seals the first and second heat sinks, and the mounting surface of the semiconductor element on the first and second electrode substrates due to a difference in outer dimensions between the first and second surfaces. 3. The semiconductor module according to claim 2, wherein the first and second electrode substrates are pressed against the semiconductor element by wrapping around a non-mounting surface side opposite to the semiconductor element. 前記第１および第２の放熱板における前記第２の面と対向する第３の面の外形寸法は、前記第２の面の外形寸法よりも大きい、請求項３に記載の半導体モジュール。   4. The semiconductor module according to claim 3, wherein an outer dimension of a third surface of the first and second heat radiating plates facing the second surface is larger than an outer dimension of the second surface. 連設される前記第１の電極基板、前記半導体素子、および前記第２の電極基板をさらに両側から挟み込むように設けられる第１および第２の放熱板をさらに備え、
前記押付手段は、前記第１および第２の放熱板をそれぞれ前記第１および第２の電極基板に押付けることによって前記第１および第２の電極基板を前記半導体素子に押付ける、請求項１に記載の半導体モジュール。 A first and second heat dissipating plate provided so as to sandwich the first electrode substrate, the semiconductor element, and the second electrode substrate that are continuously provided from both sides;
2. The pressing means presses the first and second electrode substrates against the semiconductor element by pressing the first and second heat dissipation plates against the first and second electrode substrates, respectively. The semiconductor module described in 1. 前記押付手段は、前記半導体素子、前記第１および第２の電極基板、ならびに前記第１および第２の放熱板を封止する樹脂モールド材である、請求項５に記載の半導体モジュール。   The semiconductor module according to claim 5, wherein the pressing means is a resin mold material that seals the semiconductor element, the first and second electrode substrates, and the first and second heat dissipation plates. 前記第１および第２の放熱板における前記第１および第２の電極基板とそれぞれ対向する第１の面の外形寸法は、前記第１および第２の放熱板における前記第１の面と対向する第２の面の外形寸法よりも大きく、
前記樹脂モールド材は、前記第１および第２の面の外形寸法差により生じる領域に回り込むことによって、前記第１および第２の放熱板をそれぞれ前記第１および第２の電極基板に押付ける、請求項６に記載の半導体モジュール。 The external dimensions of the first surface of the first and second heat radiating plates facing the first and second electrode substrates respectively oppose the first surface of the first and second heat radiating plates. Larger than the outer dimension of the second surface,
The resin mold material presses the first and second heat radiating plates against the first and second electrode substrates, respectively, by wrapping around a region generated by a difference in outer dimension between the first and second surfaces; The semiconductor module according to claim 6. 請求項３から請求項７のいずれか１項に記載の半導体モジュールと、
前記半導体モジュールを両側から挟み込むように設けられる第１および第２の冷却器とを備え、
前記第１および第２の冷却器は、それぞれ前記第１および第２の放熱板と密接する、半導体装置。 The semiconductor module according to any one of claims 3 to 7,
First and second coolers provided so as to sandwich the semiconductor module from both sides;
The semiconductor device in which the first and second coolers are in close contact with the first and second heat sinks, respectively. 直流電源と、
前記直流電源から直流電力を受け、電気負荷を駆動するインバータ装置とを備え、
前記インバータ装置を構成する複数のアームの各々は、
半導体素子と、
前記半導体素子を両側から挟み込むように設けられる第１および第２の電極基板と、
連設される前記第１の電極基板、前記半導体素子、および前記第２の電極基板をさらに両側から挟み込むように設けられる第１および第２の放熱板と、
連設される前記第１の放熱板、前記第１の電極基板、前記半導体素子、前記第２の電極基板、および前記第２の放熱板をさらに両側から挟み込むように設けられる第１および第２の冷却器と、
前記半導体素子、前記第１および第２の電極基板、ならびに前記第１および第２の放熱板を封止する樹脂モールド材とを含み、
前記樹脂モールド材は、前記第１および第２の電極基板を前記半導体素子に押付ける、負荷駆動装置。 DC power supply,
An inverter device that receives DC power from the DC power source and drives an electrical load;
Each of the plurality of arms constituting the inverter device,
A semiconductor element;
First and second electrode substrates provided so as to sandwich the semiconductor element from both sides;
First and second heat dissipating plates provided so as to sandwich the first electrode substrate, the semiconductor element, and the second electrode substrate that are continuously provided from both sides;
1st and 2nd provided so that said 1st heat sink, said 1st electrode substrate, said semiconductor element, said 2nd electrode substrate, and said 2nd heat sink which are continuously provided may be inserted from both sides. With a cooler,
A resin mold material for sealing the semiconductor element, the first and second electrode substrates, and the first and second heat sinks;
The resin molding material is a load driving device that presses the first and second electrode substrates against the semiconductor element.
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