JP2007096288A - Transistor and method of manufacturing same, and semiconductor device having the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a transistor for obtaining the transistor capable of forming an active layer having orientation by a simple method, and having superior carrier mobility. <P>SOLUTION: The method of manufacturing the transistor having the active layer comprising a semiconductor film containing an organic semiconductor compound includes a step of extending the semiconductor film; and a step of bonding the semiconductor film, while a surface for forming the active layer is heated and/or pressurized to obtain the active layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a transistor, a method for manufacturing the same, and a semiconductor device having the transistor.

  Various types of transistors such as bipolar transistors, field effect transistors, and electrostatic induction transistors are known. A field effect transistor, which is one of these transistors, generally has a structure in which a gate electrode is provided via an insulating layer on a layer (active layer) made of a semiconductor material to which a source electrode and a drain electrode are connected. is doing. Among such field effect transistors, an organic transistor using an organic semiconductor compound as an active layer has an advantage of being lightweight and flexible, and is expected to be applied to various electronic devices. The active layer of the organic transistor is formed by depositing an organic semiconductor compound on the insulating layer provided on the substrate, or by spin coating, drop casting or printing a solution containing the organic semiconductor compound. (Non-patent Document 1).

In such an organic transistor, it is known that carrier mobility is improved by imparting a predetermined orientation to the active layer. This is presumably because the movement of carriers becomes advantageous when the organic semiconductor compounds constituting the active layer are arranged in a certain direction. As a method of manufacturing an organic transistor capable of imparting orientation to the active layer as described above, a step of providing an alignment film of a rubbing film between the substrate and the active layer (Non-patent Documents 2 and 3), and rubbing the active layer A method including a step (Non-patent Document 4), a step of forming an active layer made of a friction transfer film (Patent Document 1), and the like is disclosed. It is known that organic transistors obtained by these manufacturing methods have superior carrier mobility compared to those having an unoriented active layer.
"Technology improvement of organic transistors", Technical Information Association, 2003 H. Sirringhaus et al., Appl. Phys. Lett., Vol 77, No. 3, p.406-408,2002 ML Swiggers et al., Appl. Phys. Lett., Vol 79, No. 9, p.1300-1302, 2001 H. Heil et al., Appl. Phys. Lett., Vol 93, No. 3, p.1636-1641,2003 JP 2004-356422 A

  However, since the conventional organic transistor manufacturing methods aiming at improving carrier mobility by forming an active layer having orientation are complicated in steps for imparting orientation to the active layer, Manufacturing of organic transistors tended to be significantly more difficult than when the active layer was not oriented.

  Therefore, the present invention has been made in view of such circumstances, and provides a method for manufacturing a transistor in which an active layer having an orientation can be formed by a simple method and a transistor having excellent carrier mobility can be obtained. With the goal. Another object of the present invention is to provide an organic transistor having an active layer having orientation and having high carrier mobility.

  In order to achieve the above object, a method for producing a transistor of the present invention is a method for producing a transistor having an active layer made of a semiconductor film containing an organic semiconductor compound, the step of stretching the semiconductor film, And a step of applying an active layer to the surface on which the layer is formed by applying heat and / or pressure.

  In the step of stretching the semiconductor film, the organic semiconductor compounds constituting the semiconductor film are aligned in the stretching direction by stretching, and thereby a predetermined orientation can be imparted to the semiconductor film. Thus, in the present invention, an active layer having an orientation can be obtained simply by stretching the semiconductor film, and an active layer having an orientation can be easily formed as compared with the conventional method. Moreover, in the manufacturing method of the said invention, it affixes on the surface in which an active layer is formed, heating and / or pressurizing a semiconductor film. Therefore, the active layer is in close contact with a layer adjacent to the active layer, and characteristics such as carrier mobility can be satisfactorily exhibited.

  In the manufacturing method of the present invention, the semiconductor film may be stretched first, and the stretched semiconductor film may be pasted. After the unstretched semiconductor film is pasted first, The semiconductor film may be stretched. In any of the manufacturing methods such as the prior art described above, orientation is imparted during the formation of the active layer or after the formation of the active layer. As in the former case, the semiconductor film is pasted after stretching. In some cases, an appropriate orientation can be given in advance to the semiconductor film to be the active layer, and an active layer having a desired orientation tends to be easily formed.

  The transistor manufacturing method of the present invention is a method for manufacturing a transistor having an active layer made of a semiconductor film containing an organic semiconductor compound, the step of aligning the semiconductor film, and the surface on which the active film is formed. And a step of forming the active layer by applying the substrate while heating and / or applying pressure thereto. As described above, in the present invention, it is possible to satisfactorily form an active layer oriented not only by stretching but by various methods by pasting a semiconductor film while heating and / or pressing.

  Furthermore, the method for producing a transistor of the present invention is a method for producing a transistor having an active layer made of a semiconductor film containing an organic semiconductor compound, the step of stretching the semiconductor film and aligning the semiconductor film with the active layer. A step of applying an active layer to the surface to be formed while applying heat and / or pressure to the surface to be formed. Thus, by orienting the semiconductor film by stretching, an active layer that can exhibit high carrier mobility can be formed particularly easily.

  In the method for manufacturing a transistor of the present invention, it is preferable that the semiconductor film is attached to the surface with a working liquid interposed between the surface on which the active layer is formed. By so doing, the contact surface between the semiconductor film and the above surface is wetted by the working liquid, and therefore, for example, even when the semiconductor film is warped, it is possible to perform good bonding. Moreover, since it becomes easy to affix by using a construction liquid in this way, it becomes possible to perform the heating and pressurization at the time of affixing on milder conditions. Therefore, it is possible to more reliably prevent the occurrence of transistor deformation or failure that may have occurred due to excessive heating or pressurization. Furthermore, the use of the construction liquid improves the adhesion between the active layer and the surface on which it is formed. As such a construction liquid, a liquid having a contact angle of 120 degrees or less with the surface on which the active layer is formed is preferable.

  More specifically, the transistor manufacturing method of the present invention is preferably applied to manufacture of a transistor having the following configuration. That is, the transistor manufacturing method of the present invention includes a source electrode and a drain electrode, an active layer made of a semiconductor film containing an organic semiconductor compound that becomes a current path between them, a gate electrode that controls a current passing through the current path, and an active A method of manufacturing a transistor having an insulating layer disposed between a layer and a gate electrode, the step of stretching the semiconductor film, and bonding the semiconductor film to the insulating layer while heating and / or pressing the active layer It is preferable to include the process of obtaining.

  In addition, a method for manufacturing a transistor of the present invention includes a source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound serving as a current path therebetween, a gate electrode for controlling a current passing through the current path, and an active A method for manufacturing a transistor having an insulating layer disposed between a layer and a gate electrode, the step of aligning a semiconductor film, and bonding the semiconductor film to the insulating layer while heating and / or pressing to activate And a step of obtaining a layer.

  Furthermore, the transistor manufacturing method of the present invention includes a source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound serving as a current path therebetween, a gate electrode for controlling a current passing through the current path, and an active A method for manufacturing a transistor having an insulating layer disposed between a layer and a gate electrode, the step of stretching and aligning the semiconductor film, and bonding the semiconductor film to the insulating layer while heating and / or pressing And obtaining an active layer.

  In these transistor manufacturing methods, an oriented active layer can be easily formed by stretching a semiconductor film, and the active layer can be formed by heating and / or pressurizing at the time of attachment. Can be satisfactorily formed on the insulating layer. Accordingly, a transistor having high carrier mobility can be obtained.

  In the above method for manufacturing a transistor, the semiconductor film is preferably bonded to the insulating layer with a working liquid interposed between the insulating film and the insulating layer. By doing so, the semiconductor film and the insulating layer can be bonded to each other more favorably, so that it is possible to further reduce the occurrence of transistor deformation and defects by mildly heating and pressing conditions.

  In addition, the transistor having the above structure manufactured by the manufacturing method of the present invention preferably has a layer made of a compound different from the organic semiconductor compound between the source electrode and / or the drain electrode and the active layer. By further including such another active layer, it is possible to reduce the contact resistance between the active layer containing an organic semiconductor compound and functioning as a carrier transport layer, and the source and drain electrodes, thereby increasing the carrier mobility. It becomes possible.

  The present invention also provides a transistor that can be satisfactorily obtained by the method for producing a transistor of the present invention. That is, the transistor of the present invention has an active layer made of a semiconductor film containing an organic semiconductor compound, the active layer is made of a stretched semiconductor film, and the surface on which the semiconductor film forms an active layer is heated and formed. It is characterized in that it is formed by being attached while applying pressure.

  Since the active layer in such a transistor is made of a stretched semiconductor film, it has a predetermined orientation. Further, since the active layer is formed by attaching a semiconductor film while heating or pressing the surface on which the active layer is formed, the active layer has good adhesion to the surface. It will be a thing. Therefore, the transistor of the present invention having such an active layer has high carrier mobility, high interlayer adhesion, and can exhibit excellent transistor characteristics.

  The transistor of the present invention has an active layer made of a semiconductor film containing an organic semiconductor compound, the active layer is made of an oriented semiconductor film, and the surface on which the semiconductor film forms the active layer is heated and / or It may be affixed while being pressed.

  In addition, the active layer has an active layer made of a semiconductor film containing an organic semiconductor compound, the active layer is made of a stretched and oriented semiconductor film, and the surface on which the semiconductor film forms the active layer is heated and / or pressurized. It may be affixed while being attached.

  These transistors also have an orientation, and since an active layer excellent in adhesion to an adjacent surface is well formed, has high carrier mobility, high interlayer adhesion, and excellent transistor It will be possible to exhibit the characteristics. Further, these transistors are also preferably those in which an active layer is formed by affixing with a working solution in the same manner as described above.

  As the transistor of the present invention, for example, a transistor having the following configuration is particularly suitable. That is, a source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound serving as a current path between them, a gate electrode for controlling a current passing through the current path, and disposed between the active layer and the gate electrode The active layer is preferably made of a stretched semiconductor film and formed by bonding the semiconductor film to the insulating layer while heating and / or pressurizing.

  Also, a source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound serving as a current path between them, a gate electrode for controlling a current passing through the current path, and disposed between the active layer and the gate electrode The active layer may be formed of an oriented semiconductor film and bonded to the insulating layer while heating and / or pressing the semiconductor film. .

  Furthermore, a source electrode and a drain electrode, an active layer made of a semiconductor film containing an organic semiconductor compound serving as a current path between them, a gate electrode for controlling a current passing through the current path, and disposed between the active layer and the gate electrode The active layer is made of a semiconductor film oriented by stretching, and the active layer is formed by bonding the semiconductor film to the insulating layer while heating and / or pressing. Good.

  Similar to the transistor of the present invention, these transistors also have an orientation and have an active layer with excellent adhesion to the adjacent surface, so that they have high carrier mobility and high interlayer adhesion. As a result, excellent transistor characteristics can be exhibited. These transistors are also preferably those in which an active layer is formed by bonding using a construction liquid. Furthermore, it is more preferable to have a layer made of a compound different from the organic semiconductor compound between the source electrode and / or drain electrode and the active layer.

  The present invention also provides a semiconductor device having the transistor of the present invention. Such a semiconductor device can exhibit good characteristics due to the excellent transistor characteristics of the transistor of the present invention.

  According to the present invention, an active layer having an orientation can be formed by a simple method, and a transistor manufacturing method for obtaining a transistor having an excellent carrier mobility, and an active layer having an orientation, which has a high carrier mobility. It becomes possible to provide an organic transistor having the same.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted. In addition, the drawings are exaggerated for easy understanding, and the dimensional ratios do not necessarily match those described.

  Hereinafter, preferred embodiments of a transistor and a method for manufacturing the same will be described. However, the present invention is not particularly limited as long as the present invention is a semiconductor element that amplifies or switches a current and includes an active layer containing an organic semiconductor compound. Applicable. The transistor has a configuration including at least an active layer and another layer adjacent to the active layer, and the active layer is formed on a surface of the other layer on which the active layer is formed. Is. Examples of such a transistor include a bipolar transistor, a static induction transistor, and a field effect transistor.

  In the following description, in particular, a source electrode and a drain electrode, an active layer serving as a current path between these electrodes and containing an organic semiconductor compound, a gate electrode for controlling a current passing through the current path, and active if necessary A transistor including an insulating layer disposed between a layer and a gate electrode and a manufacturing method thereof will be described. As the transistor having such a configuration, for example, in the case of a field effect transistor, there are various types of structures such as a planar type, an inverted staggered type, a staggered type, and the like.

  First, the configuration of the transistors of the first to sixth embodiments will be described with reference to FIGS.

  FIG. 1 is a schematic cross-sectional view of a transistor according to the first embodiment. A transistor 100 illustrated in FIG. 1 includes a substrate 10, a gate electrode 12 formed on the substrate 10, an insulating layer 14 formed on the substrate 10 so as to cover the gate electrode 12, and the insulating layer 14. And the active layer 20 formed on the insulating layer 14 so as to cover the source electrode 16 and the drain electrode 18.

  FIG. 2 is a schematic cross-sectional view of a transistor according to the second embodiment. A transistor 105 illustrated in FIG. 2 includes a gate electrode 12, an insulating layer 14 formed on the gate electrode 12, a source electrode 16 and a drain electrode 18 formed on the insulating layer 14, and a source electrode 16 and a drain electrode 18. And an active layer 20 formed on the insulating layer 14 so as to cover the surface. The gate electrode 12 in the transistor 105 also serves as the function of the substrate 10 in the transistor 100 of the first embodiment.

  FIG. 3 is a schematic cross-sectional view of a transistor according to the third embodiment. 3 includes a gate electrode 12, an insulating layer 14 formed on both surfaces of the gate electrode 12, a source electrode 16 and a drain electrode 18 formed on one insulating layer 14, a source electrode 16 and An active layer 20 formed on the insulating layer 14 so as to cover the drain electrode 18 and a support film 52 formed on the active layer 20 are provided. The gate electrode 12 in the transistor 110 also functions as the substrate 10 in the transistor 100 of the first embodiment.

  FIG. 4 is a schematic cross-sectional view of a transistor according to the fourth embodiment. A transistor 115 illustrated in FIG. 4 includes a gate electrode 12, an insulating layer 14 formed on the gate electrode 12, an active layer 20 formed on the insulating layer 14, and a source electrode 16 formed on the active layer 20. And the drain electrode 18.

  FIG. 5 is a schematic cross-sectional view of a transistor according to the fifth embodiment. The transistor 120 is a static induction organic thin film transistor. 5 includes a substrate 10, a source electrode 16 formed on the substrate 10, an active layer 20 formed on the source electrode 16, and a plurality (four in this case) formed on the active layer 20. The gate electrode 12, the active layer 24 formed on the active layer 20 so as to cover the gate electrode 12, and the drain electrode 18 formed on the active layer 24 are provided. In the transistor 120, the two active layers 20 and 24 may be layers made of the same material or layers made of different materials.

  FIG. 6 is a schematic cross-sectional view of a transistor according to the sixth embodiment. The transistor 125 includes a substrate 10, a source electrode 16 and a drain electrode 18 formed on the substrate 10, an active layer 20 formed on the substrate 10 so as to cover the source electrode 16 and the drain electrode 18, An insulating layer 14 formed on the active layer 20 and a gate electrode 12 formed on the insulating layer 14 are provided.

  In any of the transistors according to the first to fourth and sixth embodiments described above, the active layer 20 is a layer containing an organic semiconductor compound, and a current path (channel) between the source electrode 16 and the drain electrode 18. ) The gate electrode 12 controls a current passing through a current path (channel) in the active layer 20 by applying a voltage.

  In the transistor according to the fifth embodiment, the active layers 20 and 24 contain an organic semiconductor compound and form a current path between the source electrode 16 and the drain electrode 18. The gate electrode 12 controls the current passing through the current path in the same manner as described above.

  Hereinafter, a method for manufacturing the transistor of each of the above embodiments will be described together with a more detailed configuration of the transistor.

(Method for Manufacturing Transistor of First Embodiment)
First, a method for manufacturing the transistor of the first embodiment will be described. FIG. 7 is a process diagram illustrating the method for manufacturing the transistor according to the first embodiment. In this manufacturing method, first, the substrate 10, the gate electrode 12 formed on the substrate 10, the insulating layer 14 formed on the substrate 10 so as to cover the gate electrode 12, and the insulating layer 14 are formed. An element substrate 30 including the source electrode 16 and the drain electrode 18 is prepared (FIG. 7A). Separately, a semiconductor film 22 to be the active layer 20 containing an organic semiconductor compound is prepared (FIG. 7B).

  As the substrate 10, a substrate that does not impair the characteristics as a field effect transistor is used, and examples thereof include a silicon substrate, a glass substrate, a plastic substrate, and a stainless foil substrate. The insulating layer 14 is made of a material having high electrical insulation, and for example, silicon oxide, silicon nitride, aluminum oxide, tantalum oxide, an insulating polymer, or the like can be used. Here, examples of the insulating polymer include polyimide, poly (vinylphenol), polyester, methacrylic resin, polycarbonate, polystyrene, and parylene.

The surface of the insulating layer 14 may be physically and chemically modified by various methods. Examples of the physical modification method include treatment with ozone UV or O ₂ plasma. Moreover, as a chemical modification method, the process by surface treatment agents, such as a silane coupling agent, is mentioned, for example. Examples of the surface treating agent include alkylchlorosilanes, alkylalkoxysilanes, fluorinated alkylchlorosilanes, fluorinated alkylalkoxysilanes, and silylamine compounds such as hexamethyldisilazane. This surface treatment can be performed, for example, by bringing the insulating layer 14 into contact with the solution or gas of the surface treating agent and adsorbing the surface treating agent on the surface of the insulating layer 14. Prior to the surface treatment, the surface of the insulating layer 14 to be surface treated can be treated with ozone UV or O ₂ plasma.

  Examples of the method for forming the insulating layer 14 on the substrate 10 include a plasma CVD method, a thermal evaporation method, a thermal oxidation method, an anodic oxidation method, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, and a bar coating. Examples thereof include a method such as a method, a roll coating method, a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, and an inkjet printing method.

  The gate electrode 12, the source electrode 16, and the drain electrode 18 are made of a conductive material. Conductive materials include metals such as aluminum, gold, platinum, silver, copper, chromium, nickel, and titanium, conductive oxides such as ITO, and a mixture of poly (3,4-ethylenedioxythiophene) and polystyrenesulfonic acid. Examples include conductive polymers such as polymers. Further, a conductive material in which metal fine particles, carbon black, and graphite fine powder are dispersed in a binder may be used.

  The element substrate 30 having the above configuration can be manufactured by a known transistor manufacturing method, and for example, a method described in US Pat. No. 6,107,117 can be applied.

  On the other hand, the semiconductor film 22 to be the active layer 20 may be composed only of an organic semiconductor compound, or may further contain additional components other than the organic semiconductor compound. Examples of the organic semiconductor compound include a low molecular organic semiconductor compound and a high molecular organic semiconductor compound. Examples of the additive component include a dopant, an adjustment material for adjusting carriers in the active layer 20, and a polymer material for improving the mechanical characteristics of the semiconductor film. The semiconductor film 22 may include a plurality of types of organic semiconductor compounds and a plurality of types of additive components. As the organic semiconductor compound, from the viewpoint of obtaining good film formability, a high molecular organic semiconductor compound is more preferable than a low molecular organic semiconductor compound.

  Examples of the low molecular organic semiconductor compound and the high molecular organic semiconductor compound include the compounds exemplified below. Note that the organic semiconductor compound contained in the active layer 20 in the transistor of the present invention is not necessarily limited to those exemplified below.

  Examples of the low-molecular organic semiconductor compounds include anthracene, tetracene, pentacene, benzopentacene, dibenzopentacene, tetrabenzopentacene, naphthopentacene, hexacene, heptacene, nanoacene, and other polyacene compounds; Coronene compounds such as perylene, terylene, diperylene, quaterylene; trinaphthine, heptaphene, obalene, rubicene, violanthrone, isoviolanthrone, chrysene, circum Anthracene, Bisanthene, Zesulene, Heptazesulene, Pyranthrene, Biolanten, Isoviolanthene, Bif Nyl, triphenylene, terphenyl, quarterphenyl, circophenyl, ketrene, phthalocyanine, porphyrin, fullerene (C60, C70), tetrathiofulvalene compound, quinone compound, tetracyanoquinodimethane compound, oligomer of polythiophene, oligomer of polypyrrole , Oligomers of polyphenylene, oligomers of polyphenylene vinylene, oligomers of polythienylene vinylene, copolymer oligomers of thiophene and phenylene, copolymer oligomers of thiophene and fluorene, and the like. In addition, derivatives of these low molecular organic semiconductor compounds can also be used. Examples of such include rubrene, which is a benzene ring addition derivative of tetracene. Moreover, the carbon nanotube etc. which expanded the conjugated system of fullerenes can be illustrated.

  Examples of the polymer organic semiconductor compound include polythiophene, polyphenylene, polyaniline, polyphenylene vinylene, polythienylene vinylene, polyacetylene, polydiacetylene, polytriphenylamine, a copolymer of triphenylamine and phenylene vinylene, thiophene and phenylene, And a copolymer of thiophene and fluorene. In addition, derivatives of these high molecular organic semiconductor compounds can also be used. Examples of such include poly (3-hexylthiophene), which is an alkyl-substituted product of polythiophene.

Specific examples of the polymer organic semiconductor compound include compounds having the following structures.

In the above formulas (1a) to (1i), R ¹ , R ² , R ³ , R ⁴ , R ⁵ , R ⁶ , R ⁷ , R ⁸ and R ⁹ are each independently an alkyl group, an alkoxy group, an alkylthio Group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkoxy group, arylalkylthio group, arylalkenyl group, arylalkynyl group, amino group, substituted amino group, silyl group, substituted silyl group, silyloxy group, substituted A silyloxy group, a monovalent heterocyclic group, a halogen atom or a cyano group is represented. n is an integer of 1 or more.

  Examples of the dopant which is an additive component other than the organic semiconductor compound include an acceptor dopant and a donor dopant.

  First, acceptor dopants include: halogens such as iodine, bromine, chlorine, iodine chloride, iodine bromide; sulfur oxide compounds such as sulfuric acid, sulfuric anhydride, sulfur dioxide, sulfates; oxidations such as nitric acid, nitrogen dioxide, nitrates, etc. Nitrogen compounds; halogenated compounds such as perchloric acid and hypochlorous acid; acids such as tetrafluoroboric acid, tetrafluoroborate, phosphoric acid, phosphate, trifluoroacetic acid or salts thereof; tetracyanoquinodimethane And tetrachlorotetracyanoquinodimethane, tetrafluorotetracyanoquinodimethane, tetracyanoethylene, dichlorocyanoethylene, dichlorodicyanoquinone, tetrachloroquinone, carbon dioxide, oxygen, and the like.

  Examples of the donor dopant include tetrathiafulvalene, tetramethyltetrathiafulvalene, tetraselenathiafulvalene; amine compounds such as diphenylphenylenediamine, tetraphenylphenylenediamine, tetraphenyldiaminodiphenyl, and polyvinylcarbazole; alkali metals, alkaline earths Examples of such metals include rare earth metals, rare earth metals, complexes of these metals with organic compounds, and the like.

  In addition, examples of the adjustment material for adjusting the carriers in the active layer 20 include conductive materials, for example, transition metals such as aluminum, iron, copper, nickel, zinc, silver, platinum, and gold, and fine particles thereof. .

  Furthermore, examples of the polymer material for enhancing the mechanical characteristics of the semiconductor film 22 include polycarbonate, polyacrylate, polymethyl acrylate, polymethyl methacrylate, polystyrene, polyvinyl chloride, and polysiloxane.

  In manufacturing the semiconductor film 22, for example, first, an organic semiconductor compound, or an organic semiconductor compound and other additive components are dissolved and dispersed in an organic solvent to form a solution. Next, after applying this solution onto, for example, a polytetrafluoroethylene resin plate, the organic solvent is volatilized. Thereby, the semiconductor film 22 is obtained. In addition, when using this semiconductor film 22, it is preferable to peel the semiconductor film 22 from a polytetrafluoroethylene resin plate.

  Examples of the organic solvent used in the solution for manufacturing the semiconductor film 22 include chlorine solvents such as chloroform, methylene chloride, dichloroethane, and trichlorobenzene; ether solvents such as tetrahydrofuran; toluene, xylene, mesitylene, tetralin, decalin, n- Examples include aromatic hydrocarbon solvents such as butylbenzene; aromatic solvents having an alkoxy group such as anisole.

  Moreover, as a coating method of the solution, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating method, screen printing method, Examples thereof include a flexographic printing method, an offset printing method, and an ink jet printing method.

  In the transistor manufacturing method of the first embodiment, after forming the semiconductor film 22 having the above-described configuration, the obtained semiconductor film 22 is stretched. Examples of the stretching method of the semiconductor film 22 include methods such as uniaxial stretching, biaxial stretching, submerged swelling stretching, and stretching using a roll.

  Uniaxial stretching is a method in which a pair of opposite sides of a rectangular semiconductor film 22 is sandwiched between chucks and stretched in the opposite direction. At this time, it may be pulled at room temperature or may be pulled while being heated appropriately. In addition, the tension can be performed in a specific gas atmosphere such as nitrogen gas.

  Biaxial stretching is a method in which two pairs of opposite sides of the rectangular semiconductor film 22 are sandwiched between chucks, and the film is stretched in two opposite directions simultaneously or sequentially. At this time, it may be pulled at room temperature or may be pulled while being heated appropriately. In addition, the tension can be performed in a specific gas atmosphere such as nitrogen gas.

  Furthermore, in-swelling stretching is a method in which the semiconductor film 22 is immersed in an appropriate solution that swells without dissolving the semiconductor film 22, and the film is stretched by uniaxial stretching or biaxial stretching. In this case, the pulling may be performed at room temperature or may be performed while heating appropriately.

  By such stretching, the organic semiconductor compounds constituting the semiconductor film 22 are aligned in the stretching direction and arranged in a certain method. That is, the semiconductor film 22 is oriented in the stretching direction by the stretching. The active layer 20 made of the semiconductor film 22 oriented in this way has a high carrier mobility. Therefore, the transistor 100 having the active layer 22 formed from the stretched semiconductor film 22 (the same applies to transistors 105, 110, 115, 120, and 125 described later) has excellent transistor characteristics in terms of carrier mobility. Become.

  In the present embodiment, after obtaining the stretched semiconductor film 22, a pasting step is performed in which the stretched semiconductor film 22 is bonded to the insulating layer 14 in the element substrate 30 while heating and / or pressing. It implements (FIG.7 (c)). The surface of the insulating layer 14 to which the semiconductor film 22 is attached corresponds to the surface on which the active layer 20 is formed. A specific method for the bonding is not particularly limited. For example, first, the semiconductor film 22 is placed on the insulating layer 14 on which the source electrode 16 and the drain electrode 18 are formed. Next, the semiconductor film 22 placed on the insulating layer 14 is heated and / or pressurized to adhere to the insulating layer 14.

  In the sticking step, only one of heating and pressurization may be performed, or both may be performed. Moreover, when performing both, a heating and pressurization may be performed simultaneously, either one may be performed first and the other may be performed later. Further, in the pasting step, the pasting may be performed under reduced pressure in order to further improve the adhesion. In addition, when heating or the like is performed in the air, an undesirable characteristic change such as oxidation may occur depending on the type of the organic semiconductor compound. Therefore, the pasting step may be performed under an environment in which light, moisture, oxygen, and the like are controlled under reduced pressure, as well as under a nitrogen atmosphere and light shielding, if necessary.

  However, if heating or pressurization is performed under excessive conditions, the characteristics (for example, orientation) of the semiconductor film 22 may change and it may be difficult to obtain the active layer 20 having desired characteristics. Therefore, it is preferable to perform heating and pressurization under appropriate conditions. Suitable heating conditions include a temperature condition that is not lower than room temperature and does not cause deformation of the semiconductor film 22, the insulating layer 14 bonded thereto, the element substrate 30, or the like. For example, when the semiconductor film 22 is made of a polymer organic semiconductor compound, a temperature equal to or lower than the liquid crystal phase or the isotropic phase transition temperature is preferable. On the other hand, when the semiconductor film 22 is made of a low molecular organic compound, a temperature equal to or lower than its melting point is preferable. In addition, even if it is the temperature exceeding these, if it is a heating for a short time which does not produce said inconvenience, it can implement.

  The pressurization is performed in the stacking direction of the semiconductor film 22 and the insulating layer 14. For example, a load may be applied from above the semiconductor film 22, and a roll may be used to form the semiconductor film 22 and the element substrate 30. You may make it pressurize the whole. The pressure at the time of pressurization is preferably set to such an extent that the semiconductor film 22, the insulating layer 14 constituting the element substrate 30, the substrate 10, the source electrode 16 and the drain electrode 18 are not deformed or defective.

  In the pasting process, a working solution may be interposed between the semiconductor film 22 and the insulating layer 14. As the construction liquid, a liquid substance (liquid) having a property capable of wetting both the insulating layer 14 and the semiconductor film 22 is used. As a result, the semiconductor film 22 and the insulating layer 14 are wetted well, and the adhesion between them can be further improved.

  As such a construction liquid, a contact angle with the surface on which the active layer 20 of the insulating layer 14 is formed is preferably 120 degrees or less, more preferably 90 degrees or less, and 60 degrees or less. Further preferred. Here, the “contact angle” refers to the tangent line drawn from the contact point of these three phases to the construction liquid and the surface of the insulation layer 14 when a droplet of the construction liquid is formed on the insulating layer 14 in the air. This is the angle that contains the construction liquid.

It is desirable that a suitable construction liquid is appropriately selected according to the type of the insulating layer 14 (contact angle with the insulating layer 14). For example, when the surface of the insulating layer 14 is silicon oxide (SiO ₂ or the like), silicon oxide modified with alkyltrichlorosilane (octadecyltrichlorosilane or the like), silicon nitride, or organic insulating film In some cases, the construction solution includes alcohol solvents having 1 to 8 carbon atoms such as methanol, ethanol, isopropanol, ketone solvents such as acetone, ether solvents such as diethyl ether, and halogen solvents such as chloroform (from Preferably mixed with alcohol etc.), aromatic hydrocarbon solvent such as toluene (more preferably mixed alcohol etc.), aliphatic hydrocarbon solvent such as hexane, heptane, octane, water (more preferably Surfactants), nitrile solvents such as acetonitrile, ethyl acetate Suitable are ester solvents such as water, and solvents containing amine compounds such as aqueous ammonia.

  The application liquid is an additive such as a surfactant for adjusting the wettability with respect to the insulating layer 14, a dopant capable of adjusting the transistor characteristics of the active layer 20, and a material for adjusting the carrier concentration in the active layer 20. Etc. may further be included. In addition, said solvent illustrated as a construction liquid may be used independently, and 2 or more types may be mixed and used for it.

  As a method of interposing the working liquid between the semiconductor film 22 and the insulating layer 14 and bonding them together, for example, after applying the working liquid on one surface of the semiconductor film 22 and the insulating layer 14, The method of laminating the other on this construction liquid is mentioned. Further, as other methods, there can be exemplified a method in which the semiconductor film 22 and the insulating layer 14 are held with a predetermined gap (gap) and a working liquid is injected into the gap. In these methods, when the construction liquid has a contact angle of 120 degrees or less with the insulating layer 14 as described above, the surface of the insulating layer 14 can be efficiently wetted, and bonding is further improved. Can be performed.

  It should be noted that all the semiconductor film 22 is prevented from eluting into the construction liquid during the bonding with the construction liquid. This is because it becomes difficult to form a uniform active layer 20 if all of the semiconductor film 22 is eluted. In order to avoid elution of the semiconductor film 22, it is preferable to use a construction solution having a solubility parameter different from the solubility parameter (SP value) of the semiconductor film 22. Note that the semiconductor film 22 does not have to be completely dissolved in bonding, and there is no problem even if partial dissolution occurs.

  And after implementing a sticking process by the above method, when a construction liquid is used, the removal process which removes the unnecessary volatile component in this construction liquid is implemented. As a result, the semiconductor film 22 and the insulating layer 14 are in close contact with each other, and the transistor 100 of the first embodiment is obtained (FIG. 7D). In this removal step, all of the construction liquid may be removed, or a part thereof may remain. For example, as long as the adhesiveness between the insulating layer 14 and the active layer 20 is kept good, all of the construction liquid may be removed.

  The thickness of the active layer 20 in the transistor 100 is preferably 10 nm or more, more preferably 40 nm or more, and further preferably 200 nm or more. When the thickness of the active layer 20 is 10 nm or more, sufficiently good transistor characteristics can be obtained. By making the active layer 20 thicker, a transistor with higher mobility can be easily obtained. Further, by increasing the thickness of the active layer 20, there is a tendency that inconvenience due to physical damage or the like received during manufacturing is less likely to occur. In order to obtain the active layer 20 having a desired thickness, it is preferable to appropriately adjust the thickness at the stage of the semiconductor film 22. The preferred thickness of the active layer is the same in the transistors of the second and third embodiments described below.

  In the transistor manufacturing method of the first embodiment described above, the semiconductor film 22 is stretched and then bonded to the insulating layer 14. However, the transistor manufacturing method of the present invention is not limited to this, and the semiconductor film 22 is formed. The semiconductor film 22 may be stretched after being bonded to the insulating layer 14. In this case, for example, after the semiconductor film 22 is bonded to the insulating layer 14, the entire laminated substrate 30 to which the semiconductor film 22 is bonded can be stretched so that the semiconductor film 22 after bonding can be stretched. . Moreover, you may perform both extending | stretching before bonding and extending | stretching after bonding.

  Here, in the present invention, it is more preferable that the semiconductor film 22 is stretched and then bonded to the insulating layer 14. In this case, the orientation of the semiconductor film 22 can be appropriately adjusted by stretching the semiconductor film 22 in advance. In the present invention, since heating and / or pressurization is performed in the pasting step, there are factors (such as distortion of the semiconductor film 22) that inhibit the adhesion of the semiconductor film 22 to the insulating layer 14 and the like by the stretching operation. Even if it occurs, the semiconductor film 22 can be satisfactorily attached to the insulating layer 14.

  Note that, as described above, in order to achieve excellent carrier mobility, it is desirable that orientation of the film is caused by stretching of the semiconductor film 22, but the orientation does not necessarily have to occur. In some cases, the carrier mobility of the transistor may be improved by factors other than orientation, such as the semiconductor film 22 having a suitable shape by stretching.

(Method for Manufacturing Transistor of Second Embodiment)
Next, a preferred method for manufacturing the transistor according to the second embodiment will be described.

  FIG. 8 is a process diagram showing a method for manufacturing a transistor according to the second embodiment. In this manufacturing method, first, an element substrate 32 including a gate electrode 12, an insulating layer 14 formed on the gate electrode 12, and a source electrode 16 and a drain electrode 18 formed on the insulating layer 14 is prepared. (FIG. 8 (a)). Here, the gate electrode 12 also functions as a substrate. As such a gate electrode 12, for example, a metal substrate such as highly doped silicon or aluminum is suitable. The insulating layer 14 and the source and drain electrodes 16 and 18 can be formed in the same manner as in the first embodiment.

  Further, along with the manufacture of the element substrate 32, the semiconductor film 22 to be the active layer 20 containing the organic semiconductor compound is prepared (FIG. 8B). Then, the semiconductor film 22 is stretched as in the first embodiment. Then, a pasting process is performed in which the semiconductor film 22 and the insulating layer 14 in the element substrate 32 are bonded together while heating and / or pressing (FIG. 8C). When the construction liquid is used in this sticking process, a removal process for removing unnecessary volatile components in the construction liquid is further performed as necessary. Thereby, the transistor 105 according to the second embodiment is obtained (FIG. 8D).

  Also in the second embodiment, the stretching of the semiconductor film 22 may be performed not after the bonding with the insulating layer 14 but after the bonding. In this case, after the unstretched semiconductor film 22 is bonded to the insulating layer 14, the entire element substrate 32 to which the semiconductor film 22 is bonded is stretched in a predetermined direction.

(Method for Manufacturing Transistor of Third Embodiment)
Next, a method for manufacturing a transistor according to the third embodiment will be described.

  FIG. 9 is a process diagram illustrating a method for manufacturing a transistor according to the third embodiment. In this manufacturing method, a laminate in which the semiconductor film 22 and the support film 52 are bonded together is used as a material for forming the active layer.

  That is, in this embodiment, first, an element substrate including a gate electrode 12, an insulating layer 14 formed on both surfaces of the gate electrode 12, and a source electrode 16 and a drain electrode 18 formed on one insulating layer 14. 34 is prepared (FIG. 9A). Separately, instead of the semiconductor film 22 in the first embodiment, a laminated body 50 (the semiconductor film 22 laminated on the support film 52) is prepared (FIG. 9B). The insulating layer 14, the source electrode 16 and the drain electrode 18 in the element substrate 34 can be formed in the same manner as in the first embodiment.

  The support film 52 in the laminate 50 may be made of either an inorganic material or an organic material. Examples thereof include polysiloxane, fluorine-based resin, polyethylene, polypropylene, methylpentene resin, polycarbonate, polyimide, polyamide, vinyl chloride, vinylidene chloride, acrylic resin, methacrylic resin, polystyrene, nylon, polyester, polyvinyl alcohol, and the like.

  Here, when the semiconductor film 22 is aligned before being bonded to the insulating layer 14, there are a method of aligning the semiconductor film 22 alone and a method of aligning after the stacked body 50 is formed. In the latter case, the support film 52 is preferably one that can handle a predetermined orientation operation. As such a support film 52, for example, polyethylene, polypropylene, methylpentene resin, polycarbonate, polyimide, polyamide, vinyl chloride, vinylidene chloride, methacrylic resin, nylon, polyester, polyvinyl alcohol, and the like are suitable.

  Further, the support film 52 may include a layer having a functionality that promotes peeling from the semiconductor film 22 laminated on the support film 52. For example, examples of such a layer include a layer having a function of converting light into heat and a layer that expands by heat. These layers can promote peeling between the support film 52 and the semiconductor film 22 by heat. Therefore, when the support film 52 has these layers, the support film 52 is easily peeled off from the active layer 20 by performing light irradiation or heating after the attaching step of attaching the laminate 50 and the insulating layer 14 together. Will be able to.

  Furthermore, when the support film 52 has a layer having a function of converting light to heat as described above or a layer that expands by heat, patterning of the active layer 20 may be facilitated. That is, for example, after the laminated body 50 is attached to the insulating layer 14, a predetermined portion of the semiconductor film 22 is irradiated with light through the support film 52 or heated by a trowel. In this way, the light irradiated portion and the heated portion of the semiconductor film are transferred onto the insulating layer 14, while other portions are easily peeled off together with the support film 52. As a result, only the predetermined portion of the semiconductor film 22 remains on the insulating layer 14, thereby forming the patterned active layer 20.

  The laminated body 50 is, for example, bonding of the support film 52 and the semiconductor film 22 formed in advance, direct application of the organic semiconductor compound to the support film 52, and direct application of a solution of the organic semiconductor compound to the support film 52. Can be formed. For example, in the case of a solid organic semiconductor compound, direct application of the organic semiconductor compound to the support film 52 can be performed by vapor deposition of the organic semiconductor compound on the support film 52, spray coating of a melt, sublimation application, or the like. .

  Further, the direct application of the organic semiconductor compound solution to the support film 52 includes, for example, spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, and the like. It can be performed by a coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an inkjet printing method, or the like.

  When the semiconductor film 22 is oriented before being attached to the insulating layer 14, it can be performed in the state of the stacked body 50. The orientation can be performed by, for example, uniaxial stretching, biaxial stretching, submerged swelling stretching, etc., as in the first embodiment described above. In this case, the support film 52 is also stretched together with the semiconductor film 22.

  Further, when the organic semiconductor compound constituting the semiconductor film 22 has liquid crystallinity, the semiconductor film 22 may be aligned by other methods known as liquid crystal alignment methods in addition to stretching. Good. As such a method, for example, “Fundamentals and Applications of Liquid Crystals” (Shinichi Matsumoto, Ryoko Kakuda, Industrial Research Society 1991), Chapter 5, “Structure and Physical Properties of Ferroelectric Liquid Crystals” (Fukuda Ikuo, Co-authored by Hideo Takezoe, Corona, 1990) Chapter 7, “Liquid Crystal” Vol. 3, No. 1 (1999), pages 3 to 16 and the like. These orientation methods can be performed in place of stretching also in the first and second embodiments described above and in the fourth to sixth embodiments described later.

  As such an alignment method, for example, a rubbing method, a photo-alignment method, a sharing method (shear stress application method) and a pulling coating method are simple and useful and particularly easy to use.

  The rubbing method is a method in which the support film 52 is lightly rubbed with a cloth or the like. As cloth for rubbing the support film 52, cloth such as gauze, polyester, cotton, nylon and rayon can be used. The cloth used for rubbing can be appropriately selected according to the film to be oriented. In this case, if an alignment film is separately formed on the support film 52, the alignment performance becomes higher. Examples of the alignment film include polyimide, polyamide, polyvinyl alcohol, polyester, nylon, and the like, and a commercially available alignment film for liquid crystal is also applicable. The alignment film can be formed by spin coating or flexographic printing.

  The photo-alignment method is a method of providing an alignment function by forming an alignment film on the support film 52 and irradiating polarized UV light or obliquely irradiating UV light. Examples of the alignment film include polyimide, polyamide, and polyvinyl cinnamate, and a commercially available alignment film for liquid crystal is also applicable.

  By such a rubbing method or a photo-alignment method, the organic semiconductor compound (semiconductor film 22) laminated on the support film 52 subjected to the above treatment can be aligned. This orientation occurs when the organic semiconductor compound has a liquid crystal phase or isotropic phase temperature on the support film 52. Moreover, the semiconductor film 22 formed on the support film 52 can also be oriented by providing the organic semiconductor compound on the support film 52 after the orientation treatment.

  Further, when an organic semiconductor compound is applied on the support film 52, the application is set to a temperature at which the organic semiconductor compound is placed on the support film 52 and the temperature is equal to or higher than the Tg, or a liquid crystal phase or an isotropic phase. The orientation can be caused by coating by unidirectional coating. Alternatively, a solution in which an organic semiconductor compound is dissolved in an organic solvent may be prepared and applied by spin coating, flexographic printing, or the like. In addition, even if the organic semiconductor compound does not have liquid crystallinity, if it can be vapor-deposited, this organic semiconductor compound is epitaxially vapor-deposited on the support film 52 subjected to the alignment treatment, A layer (semiconductor film 22) made of an oriented organic semiconductor compound can be obtained.

  In the sharing method, another substrate is placed on the organic semiconductor compound placed on the support film 52, and the upper substrate is shifted in one direction at a temperature at which the organic semiconductor compound becomes a liquid crystal phase or an isotropic phase. Is the method. At this time, when the support film 52 having a support layer subjected to the alignment treatment as described in the rubbing method or the photo-alignment method is used, the semiconductor film 22 having a higher degree of alignment can be obtained. Examples of the upper substrate include glass and a polymer film, and may be a metal rod or the like.

  Further, the pulling application method is a method in which the oriented organic semiconductor compound layer (semiconductor film 22) is formed on the support film 52 by immersing the support film 52 in an organic semiconductor compound solution and pulling it up. Conditions such as the organic solvent used in the organic semiconductor compound solution and the lifting speed of the support film 52 are not particularly limited, but it is preferable to select and adjust according to the desired degree of orientation of the organic semiconductor compound.

  As described above, several methods for aligning the semiconductor film 22 have been described. In any of the first to sixth embodiments, the alignment is preferably performed by stretching from the viewpoints of simplicity and usefulness.

  Next, after the element substrate 34 and the laminated body 50 are prepared, a pasting process is performed in which the laminated body 50 and the insulating layer 14 in the element substrate 34 are bonded together while heating and / or pressing (FIG. 9 (c). )). The heating and pressurizing conditions can be the same as those in the first embodiment. Moreover, you may perform a sticking process on pressure reduction conditions for the further improvement of adhesiveness and the further acceleration | stimulation of the removal of a construction liquid in addition to the said heating and / or pressurization.

  And also in the manufacturing method of the transistor of 3rd Embodiment, when a construction liquid is used in the pasting process, for example, a removal process for removing unnecessary volatile components in the construction liquid is performed as necessary. As a result, the transistor 110 of the third embodiment in which the support film 52 is laminated on the active layer 20 is obtained (FIG. 9D). Note that the support film 52 may be removed after the transistor 110 is completed, or may be laminated as it is if there is no practical problem. In the case where the support film 52 is laminated, the support film 52 has a function capable of protecting from the factors (physical damage, the influence of gas due to the atmosphere, charging, etc.) that deteriorate the characteristics of the active layer 20. It is preferable to apply.

  Note that either the step of orienting the semiconductor film 22 and the pasting step may be performed first as described above. In particular, when the semiconductor film 22 is oriented by a method other than stretching, the semiconductor film 22 first. It is preferable to carry out the pasting step using the oriented semiconductor film 22 after the orientation. By doing so, the active layer 20 having a desired orientation tends to be more easily obtained.

(Method for Manufacturing Transistor of Fourth Embodiment)
Next, a method for manufacturing a transistor according to the fourth embodiment will be described.

  FIG. 10 is a process diagram illustrating a method for manufacturing a transistor according to the fourth embodiment. In this manufacturing method, first, a first element substrate 36 including a gate electrode 12 and an insulating layer 14 formed thereon is prepared (FIG. 10A). The gate electrode 12 also has a function as a substrate. The configuration and manufacturing method of the gate electrode 12 and the insulating layer 14 can be performed in the same manner as in the second embodiment.

  In addition to the manufacture of the first element substrate 36, a semiconductor film 22 to be the active layer 20 containing an organic semiconductor compound is prepared (FIG. 10B). Then, the process for extending | stretching this semiconductor film 22 and the other orientation are suitably performed. Then, a pasting step is performed in which the semiconductor film 22 and the insulating layer 14 in the first element substrate 36 are bonded together while heating and / or pressing (FIG. 10C). Thus, the second element substrate 60 in which the active layer 20 is formed on the element substrate 36 is formed (FIG. 10D). In this pasting step, a laminated body 50 as in the third embodiment may be used instead of the semiconductor film 22. In this case, after sticking, the support film 52 in the laminated body 50 is removed, and then the next operation is performed.

  Then, the source electrode 16 and the drain electrode 18 are formed on the active layer 20 in the second element substrate 60 in the same manner as in the first embodiment, thereby obtaining the transistor 115 according to the fourth embodiment (FIG. 10 (e)).

  Also in the manufacture of the transistor of the fourth embodiment, the stretching of the semiconductor film 22 and other alignment operations may be performed before or after the semiconductor film 22 is bonded.

(Method for Manufacturing Transistor of Fifth Embodiment)
Next, a preferred method for manufacturing a transistor according to the fifth embodiment will be described.

  11 and 12 are process diagrams showing a method for manufacturing a transistor according to the fifth embodiment. In this manufacturing method, first, a first element substrate 38 including a substrate 10 and a source electrode 16 formed thereon is prepared (FIG. 11A).

  Separately, a semiconductor film 22 to be the active layer 20 containing an organic semiconductor compound is prepared (FIG. 11B), and the semiconductor film 22 is subjected to stretching and other orientation operations. Then, a first pasting step is performed in which the semiconductor film 22 and the source electrode 16 in the first element substrate 38 are pasted while being heated and / or pressurized (FIG. 11C). This first sticking step can be performed in the same manner as in the first embodiment. Then, the semiconductor film 22 is brought into close contact with the first element substrate 38, and the active layer 20 is formed from the semiconductor film 22 (FIG. 11D).

  Next, a plurality (here, four) of gate electrodes 12 are formed on the active layer 20 formed on the first element substrate 38, thereby obtaining the second element substrate 62 (FIG. 11 (e)). )). The same gate electrode 12 as in the first embodiment can be applied.

  In addition to the second element substrate 62 (FIG. 12E), a semiconductor film 26 to be the active layer 24 containing an organic semiconductor compound is separately prepared (FIG. 12F). The semiconductor film 26 is also subjected to stretching and other orientation operations as appropriate. As the organic semiconductor compound constituting the semiconductor film 26, the same organic semiconductor compound as that of the active layer 20 may be applied, or a different one may be applied.

  Then, a second pasting step is performed in which the semiconductor film 26 and the active layer 20 in the second laminated substrate 62 are pasted together while being heated and / or pressurized (FIG. 12G). As a result, the semiconductor film 26 is attached on the active layer 20 so as to cover the gate electrode 12. This 2nd sticking process can also be performed similarly to 1st Embodiment etc. In addition, in the 1st and 2nd sticking process, although a construction liquid can be used like the embodiment mentioned above, the same thing may be used for the construction liquid in these processes, and a different thing is used. May be.

  By the second pasting step, the semiconductor film 26 is brought into close contact with the active layer 20 so as to sandwich the gate electrode 12 to form the active layer 24 (FIG. 12H). On the active layer 24 thus formed, the drain electrode 18 is formed in the same manner as in the first embodiment, thereby obtaining the transistor 120 according to the fifth embodiment (FIG. 12I). In the transistor manufacturing process of the fifth embodiment, either one of the active layers 20 and 24 may be formed by a method described in, for example, Japanese Patent Application Laid-Open No. 2004-006476. In the first and second pasting steps, the laminated body 50 as in the third embodiment may be used instead of the semiconductor film 22. In this case, after sticking, the support film 52 in the laminated body 50 is removed, and then the subsequent operation is performed.

  In the transistor manufacturing method of the fifth embodiment, the alignment operation such as stretching is performed on both of the semiconductor films 22 and 26 for forming the active layers 20 and 24. However, the present invention is not limited to this, and at least one semiconductor is used. If the film is stretched or the like, the carrier mobility can be improved. Moreover, in this embodiment, after each unstretched semiconductor film 22 and 26 is pasted in each pasting process, the board after pasting these (for example, the 1st element substrate 38 or the 2nd element substrate) 62), an orientation operation such as stretching may be performed. Further, one semiconductor film may be attached before stretching, and the other semiconductor film may be attached after stretching.

(Method for Manufacturing Transistor of Sixth Embodiment)
Next, a preferable method for manufacturing the transistor according to the sixth embodiment will be described.

  13 and 14 are process diagrams showing a method for manufacturing a transistor according to the sixth embodiment. In this manufacturing method, first, a substrate 10 and an element substrate 64 including a source electrode 16 and a drain electrode 18 thereon are prepared (FIG. 13A). The source electrode 16 and the drain electrode 18 can be formed by the same method as in the first embodiment.

  Further, along with the manufacture of the element substrate 64, the semiconductor film 22 to be the active layer 20 containing the organic semiconductor compound is prepared (FIG. 13B). Subsequently, an operation for imparting stretching or other orientation as described above to the semiconductor film 22 is performed as appropriate. Then, a pasting process is performed in which the stretched or oriented semiconductor film 22 and the substrate 10 in the element substrate 64 are bonded together while heating and / or pressing (FIG. 13C). Thereby, the active layer 20 is formed on the substrate 10 so as to cover the source electrode 16 and the drain electrode 18 (FIG. 13D).

  Then, the insulating layer 14 is formed on the active layer 20 in the same manner as in the first embodiment (FIG. 14E), and the first embodiment is formed on the insulating layer 14 thus formed. The gate electrode 12 is formed in the same manner as described above, thereby obtaining the transistor 125 according to the sixth embodiment (FIG. 14F).

  In the manufacture of the transistor of the sixth embodiment, the laminated body 50 as in the third embodiment can be used in place of the semiconductor film 22 in the attaching step. In this case, after sticking, after removing the support film 52 in the laminated body 50, operation which continues is performed. Moreover, when the support film 52 has the function as the insulating layer 14, it is good also as the insulating layer 14 as it is, without removing the support film 52.

  As mentioned above, although the transistor of 1st-6th Embodiment and its manufacturing method were demonstrated as an example of a suitable organic-semiconductor element and its manufacturing method, the transistor in this invention and its manufacturing method are necessarily limited to embodiment mentioned above. It may be changed as appropriate.

  For example, first, the active layer 20 (the active layers 20 and 24 in the fifth embodiment) in the transistor of each embodiment does not need to be a single layer, and may be composed of a plurality of layers. Good. When the active layers 20 and 24 are composed of a plurality of layers, these layers may be composed of the same material or different materials. The active layers 20 and 24 composed of a plurality of layers are formed on the semiconductor films 22 and 26 for forming the active layers 20 and 24, after removing the supporting film and the like remaining thereon as necessary. It can be formed by further stacking the same or different types of semiconductor films.

  In the above-described embodiments, the source electrode 16 and the drain electrode 18 and the active layer 20 or 24 are in direct contact with each other. However, the present invention is not limited to this, and the source electrode 16 and / or the drain electrode are not limited thereto. A layer made of a compound different from the organic semiconductor compound may be interposed between 18 and the active layers 20 and 24. Thereby, the contact resistance between the source electrode 16 and the drain electrode 18 and the active layers 20 and 24 is reduced, and the carrier mobility of the transistor can be further improved. Examples of the compound different from the organic semiconductor compound include a donor compound, an acceptor compound, and a compound having a thiol group.

  Here, examples of the donor compound include tetrathiafulvalene, tetramethyltetrathiafulvalene, tetraselenathiafulvalene; amine compounds such as diphenylphenylenediamine, tetraphenylphenylenediamine, tetraphenyldiaminodiphenyl, and polyvinylcarbazole; alkali metals, alkalis Examples include earth metals, rare earth metals, complexes of these metals with organic compounds, and the like.

  Acceptable compounds include: halogens such as iodine, bromine, chlorine, iodine chloride and iodine bromide; sulfur oxide compounds such as sulfuric acid, anhydrous sulfuric acid, sulfur dioxide and sulfate; oxidation such as nitric acid, nitrogen dioxide and nitrate Nitrogen anhydride; halogenated compounds such as perchloric acid and hypochlorous acid; acids such as tetrafluoroboric acid, tetrafluoroborate, phosphoric acid, phosphate, trifluoroacetic acid or salts thereof; tetracyanoquinodi Examples include methane, tetrachlorotetracyanoquinodimethane, tetrafluorotetracyanoquinodimethane, tetracyanoethylene, dichlorocyanoethylene, dichlorodicyanoquinone, and tetrachloroquinone.

  Furthermore, as a compound having a thiol group, alkyl thiols, alkyl thiol compounds such as fluorinated alkyl thiols, aromatic thiols, fluorinated alkyl aromatic thiols, fluorinated aromatic thiols, nitro aromatic thiols And aromatic thiol compounds such as aminoaromatic thiols.

  The layer made of these compounds can be formed, for example, by bringing a solution or gas of the compound into contact with the surface of the source electrode 16 or the drain electrode 18 and adsorbing the compound onto the contact surface.

  Moreover, in the transistor of each embodiment described above, the thickness of the source electrode 16 and the drain electrode 18 is not particularly limited. However, when the active layers 20 and 24 are formed on the source electrode 16 and the drain electrode 18 as in the first to third and fifth embodiments, the adhesion to the active layers 20 and 24 is further improved. Therefore, it is preferable that the source electrode 16 and the drain electrode 18 be as thin as possible as long as the functions of these electrodes are not impaired.

  Furthermore, the transistors of the first to sixth embodiments can be sealed after completing the above-described element configuration to be a sealed transistor. As a result, the transistor is shielded from the atmosphere and protected from physical damage and the like, and it is possible to suppress deterioration of the transistor characteristics.

  As a sealing method, the device configuration is covered with an insulating polymer, UV curable resin, thermosetting resin, inorganic silicon oxide film or silicon nitride film, and the glass plate or film is UV cured for the device configuration. Examples include a method of bonding with a resin or a thermosetting resin. In order to effectively cut off from the atmosphere, the steps from the formation of the transistor to the sealing are performed without exposure to the atmosphere (for example, in a dry nitrogen atmosphere and stored in a vacuum). preferable.

  Furthermore, the above-described transistor is preferably applied to a semiconductor device. Examples of the semiconductor device include a wireless tag, a display, a large surface sensor, and the like. In a semiconductor device, for example, a transistor can form a logic circuit by itself or in combination with a plurality of other transistors. Specifically, it is suitable as a switching transistor, a signal driver circuit element, a memory circuit element, a signal processing circuit element, or the like of a pixel of a display which is a semiconductor device. As the display, electronic paper, liquid crystal, organic LED, etc. can be widely applied.

EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example and a comparative example, this invention is not limited to a following example at all.
<Organic semiconductor compound>

Poly (3-hexylthiophene) and poly (3-octylthiophene) used were purchased from Aldrich. These poly (3-hexylthiophene) and poly (3-octylthiophene) were regioregular.
[Manufacture and evaluation of transistors]

As shown below, the transistors of Examples 1 to 3 and Comparative Examples 1 to 5 were produced according to the steps shown in FIG. 15 or 16, respectively, and the characteristics of the transistors obtained thereby were evaluated. did.
[Example 1]

(Manufacture of transistors)
(1) Fabrication of element substrate First, as shown in FIG. 15 (a), the surface of a highly doped n-type silicon substrate 201 serving as a gate electrode which also serves as a substrate is thermally oxidized to form a silicon oxide film. An insulating layer 203 to be formed was formed to 200 nm, and this was used as a supporting substrate. Next, as shown in FIG. 15B, gold is deposited on the surface of one insulating layer 203 of the substrate 201 to a thickness of 65 nm by a vacuum deposition method, and a source electrode having a lead line and a pad is formed. 204a and a drain electrode 204b were formed. At this time, the channel width of the electrode was 500 μm, and the channel length was 20 μm.

  Subsequently, referring to the method described in the literature (SR Wasserman, et al., Langmuir, Vol. 5, p1074, 1989), the surface of the insulating layer 203 was coated with an octane solution (6 mmol / octyltrichlorosilane). The element substrate 206 was formed by immersing in l) for modification.

(2) Production of stretched laminate On the other hand, separately from the element substrate 206, a laminate for forming an active layer was prepared. That is, first, a chloroform solution (2.0 wt%) of poly (3-hexylthiophene) was prepared under the atmosphere.

  Next, as shown in FIG. 15 (c), a chloroform solution of poly (3-hexylthiophene) was applied on a polyethylene film as a support film 207 by a spin coat method (1000 rpm) in a glove box in a nitrogen atmosphere. did. Thus, a laminate 205 in which the poly (3-hexylthiophene) film 208 was laminated on the polyethylene support film 207 was formed.

  Thereafter, the laminate 205 was uniaxially stretched 2.5 times at 100 ° C. in a nitrogen atmosphere. Thus, a stretched laminate 215 composed of the support film 217 after stretching and the poly (3-hexylthiophene) film 218 after stretching was obtained (FIG. 15D).

  Here, the orientation state of the poly (3-hexylthiophene) film 218 in the stretched laminate 215 was confirmed as follows. That is, first, a part of the stretched laminate 215 was cut out and pressed against a slide glass heated to 60 ° C. on a hot plate so that the surface of the poly (3-hexylthiophene) film 218 was in contact. Then, the poly (3-hexylthiophene) film 218 was transferred to the slide glass by peeling only the support film 217 with tweezers. The transferred poly (3-hexylthiophene) film 218 was observed with a polarizing microscope. As a result, it was confirmed that the poly (3-hexylthiophene) film 218 was oriented in the extending direction of the laminate 205 described above.

(3) Fabrication of Transistor Next, as illustrated in FIG. 15E, the stretched stacked body 215 is formed on the insulating layer 203 on which the source electrode 204 a and the drain electrode 204 b are formed, using the poly (3-hexylthiophene). ) The film 218 was placed with tweezers so as to face the insulating layer 203 on which the source electrode 204a and the drain electrode 204b were formed. Furthermore, the surface of the stretched laminate 215 was rubbed very softly with Ben Cotton (Asahi Kasei) from above. At this time, the extending direction of the extending laminate 215 was made parallel to the direction connecting the source electrode 204a and the drain electrode 204b.

  Thereafter, the element substrate 206 on which the stretched laminate 215 was placed was heated using a hot plate in a nitrogen atmosphere at 80 ° C. for 40 minutes. Thus, the transistor 200 of Example 1 was obtained (FIG. 15F).

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +50 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 1.7 × 10 ⁻² cm ² / Vs.
[Example 2]

(Manufacture of transistors)
In the production of the transistor of (3), after the stretched laminate 215 was placed on the element substrate 206, a load of 0.47 kg / cm ² was applied to the stretched laminate 215, and a hot plate was used in a nitrogen atmosphere at 80 ° C. for 40 minutes, and further 90 A transistor 200 of Example 2 was obtained in the same manner as in Example 1 except that heating was performed at 45 ° C. for 45 minutes.

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +50 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 2.8 × 10 ⁻² cm ² / Vs.
[Example 3]

(Manufacture of transistors)
In the production of the transistor of (3), after the stretched laminate 215 was placed on the element substrate 206, only an operation of applying a load of 2.7 kg / cm ² for 30 minutes in a nitrogen atmosphere was performed. A transistor 200 of Example 3 was obtained in the same manner as Example 1.

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +50 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 8.1 × 10 ⁻³ cm ² / Vs.
[Comparative Example 1]

(Manufacture of transistors)
A transistor 200 of Comparative Example 1 was obtained in the same manner as in Example 1 except that the element substrate 206 on which the stretched laminate 215 was placed was not heated in the production of the transistor of (3).

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +50 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 2.0 × 10 ⁻³ cm ² / Vs.
[Comparative Example 2]

(Manufacture of transistors)
(1) Production of Element Substrate First, an element substrate 206 was obtained in the same manner as in Example 1 according to the manufacturing process shown in FIGS. 15 (a) and 15 (b).

(2) Production of Laminate On the other hand, separately from the element substrate 206, a laminate for forming an active layer was prepared as shown in FIG. That is, first, a chloroform solution (2.0 wt%) of poly (3-hexylthiophene) was prepared under the atmosphere.

Next, in a glove box in a nitrogen atmosphere, a chloroform solution of poly (3-hexylthiophene) was applied on the polyethylene film as the support film 207 by a spin coating method (1000 rpm). Thus, a laminate 205 in which the poly (3-hexylthiophene) film 208 was laminated on the polyethylene support film 207 was formed. And in the comparative example 2, without extending | stretching this laminated body 205, it cut to the suitable magnitude | size as it was and used for manufacture of a transistor.
(3) Fabrication of Transistor Next, as illustrated in FIG. 16A, a stacked body 205 is formed over the insulating layer 203 over which the source electrode 204a and the drain electrode 204b are formed, using the poly (3-hexylthiophene). The film 208 was placed with tweezers so as to face the insulating layer 203 on which the source electrode 204a and the drain electrode 204b are formed. Furthermore, the surface of the laminate 205 was rubbed very softly with Ben Cotton (Asahi Kasei) from above.

  Thereafter, the element substrate 206 on which the stacked body 205 was placed was heated at 80 ° C. for 40 minutes in a nitrogen atmosphere using a hot plate. Thus, a transistor 210 of Comparative Example 2 including an unstretched active layer 228 made of poly (3-hexylthiophene) was obtained (FIG. 16B).

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +50 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 1.1 × 10 ⁻² cm ² / Vs.
[Comparative Example 3]

(Manufacture of transistors)
In the fabrication of the transistor of (3), after the stacked body 205 is placed on the element substrate 206 (FIG. 16A), a load of 0.47 kg / cm ² is applied to the stacked body 205 and a nitrogen atmosphere is used using a hot plate. A comparative example provided with an unstretched active layer 228 made of poly (3-hexylthiophene) in the same manner as in Comparative Example 2 except that heating was performed at 80 ° C. for 40 minutes and further at 90 ° C. for 45 minutes. 3 transistor 210 was obtained.

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +40 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 2.0 × 10 ⁻² cm ² / Vs.
[Comparative Example 4]

(Manufacture of transistors)
In the production of the transistor of (3), only after the stacked body 205 is placed on the element substrate 206 (FIG. 16A), a load of 2.7 kg / cm ² is applied for 30 minutes in a nitrogen atmosphere. A transistor 210 of Comparative Example 4 including an unstretched active layer 228 made of poly (3-hexylthiophene) was obtained in the same manner as in Comparative Example 2 except that the above process was performed (FIG. 16B).

(Measurement of IV characteristics)
The transistor characteristics were measured by applying a silicon substrate 201 as a gate electrode to the obtained transistor, applying a gate voltage V _G of +50 to −40, and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 7.6 × 10 ⁻³ cm ² / Vs.
[Comparative Example 5]

(Manufacture of transistors)
In the manufacture of the transistor of (3), the transistor of Comparative Example 5 was the same as Comparative Example 1 except that the stacked body 205 was placed on the element substrate 206 (FIG. 16A) and the heating was not performed. 210 was obtained.

(Measurement of IV characteristics)
The transistor characteristics were measured by applying a silicon substrate 201 as a gate electrode to the obtained transistor, applying a gate voltage V _G of +50 to −40, and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 5.7 × 10 ⁻³ cm ² / Vs.
[Example 4]

(Manufacture of transistors)
Implementation was performed except that an element substrate 216 (see FIG. 18) in which a layer 500 of 4- (trifluoromethyl) thiophenol was further formed on the source electrode 204a and the drain electrode 204b in the element substrate 206 was used as the element substrate. A transistor is manufactured in the same manner as in Example 1. As shown in FIG. 17, a transistor having a 4- (trifluoromethyl) thiophenol layer 500 between the source electrode 204 a and the drain electrode 204 b and the active layer 220. 300 was obtained. The 4- (trifluoromethyl) thiophenol layer 500 is formed by immersing the element substrate 206 in an ethanol solution of 4- (trifluoromethyl) thiophenol (1 mmol / L) for 0.5 hour. did.

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +40 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 4.1 × 10 ⁻² cm ² / Vs.
[Comparative Example 6]

(Manufacture of transistors)
In the production of the transistor of (3), a transistor was obtained in the same manner as in Example 4 except that the unstretched laminate 205 similar to Comparative Example 2 was used instead of the stretched laminate 215. Thus, instead of the active layer 220 and the stretched support film 217, a comparative example having the same configuration as the transistor 300 of Example 4 except that it has an unstretched active layer 228 and an unstretched support film 207, respectively. 6 transistors were obtained.

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +40 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 2.7 × 10 ⁻² cm ² / Vs.
[Example 5]

(Manufacture of transistors)
(1) Fabrication of element substrate First, an element substrate 206 was fabricated in the same manner as in Example 1, and then 4- (trifluoromethyl) thio was formed on the source electrode 204a and the drain electrode 204b in the same manner as in Example 4. A phenol layer 500 was further formed to obtain an element substrate 216 (FIG. 18).

(2) Production of stretched laminate A stretched laminate 215 was obtained in the same manner as in Example 1.

(3) Fabrication of Transistor Next, as shown in FIG. 18, methanol droplets are placed as a working liquid 9 on the insulating layer 203 in the element substrate 216 with a dropper, and the stretched laminate 215 is passed through the working liquid 9. The poly (3-hexylthiophene) film 218 was placed with tweezers so that the insulating layer 203 on which the source electrode 204a and the drain electrode 204b were formed was opposed. At this time, the extending direction of the extending laminate 215 was made parallel to the direction connecting the source electrode 204a and the drain electrode 204b. And it left still until the methanol which is the construction liquid 9 was dried and removed. Thus, the stretched laminate 215 was naturally adhered onto the insulating layer 203 so as to cover the source electrode 204a and the drain electrode 204b. Next, heat treatment was performed at 80 ° C. for 40 minutes in the same manner as in Example 4. Thus, the transistor of Example 5 having the same configuration as the transistor 300 of Example 4 was obtained.

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +40 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 1.2 × 10 ⁻¹ cm ² / Vs.
[Comparative Example 7]

(Manufacture of transistors)
In the production of the transistor of (3), a transistor was obtained in the same manner as in Example 5 except that the unstretched laminate 205 similar to Comparative Example 2 was used instead of the stretched laminate 215. Thereby, the transistor of Comparative Example 7 having the same configuration as that of Comparative Example 6 in which the unstretched active layer 228 was formed by bonding through the working solution 9 was obtained.

(Measurement of IV characteristics)
The transistor characteristics were measured with respect to the obtained transistor by using the silicon substrate 201 as a gate electrode and applying a gate voltage V _G of +40 to −40 V and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. . As a result, the mobility obtained from the IV characteristics was 8.8 × 10 ⁻² cm ² / Vs.

  Tables 1 and 2 collectively show the characteristics of the transistors obtained in Examples 1 to 5 and Comparative Examples 1 to 7. Table 1 shows the characteristics obtained in the transistors of Examples 1 to 5 and Comparative Example 1 obtained by stretching the semiconductor film on which the active layer is to be formed. Table 2 shows the characteristics of the semiconductor film. The characteristic obtained with the transistor of Comparative Examples 2-7 which did not extend | stretch is shown. In each table, the value of the mobility improvement rate is a value calculated by assuming that the mobility of the transistor obtained when heating and pressurization are not performed during the formation of the active layer is 100%. The rate at which the mobility is improved by pressurization is shown.

  From Tables 1 and 2, the transistors of Examples 1 to 5 that were oriented by stretching of the semiconductor film forming the active layer had the mobility of heating and / or pressurization during the formation of the active layer. As a result, it was confirmed that the transistor characteristics were excellent.

  Further, for example, in the case where the formation conditions of the active layer are the same as in Example 1 and Comparative Example 2, Example 2 and Comparative Example 3, and Example 3 and Comparative Example 4, each Example in which stretching was performed It was found that this transistor has higher mobility than that of the comparative example that was not stretched and can exhibit excellent transistor characteristics. Furthermore, from the comparison between Comparative Example 1 and Comparative Example 5, it was confirmed that only the stretching did not improve the mobility as much as when combined with heating and pressurization. Furthermore, a 4- (trifluoromethyl) thiophenol layer is provided between the source and drain electrodes and the active layer as in Example 4, or bonding using a construction liquid is performed as in Example 5. As a result, the mobility was further improved. And from the comparison with Comparative Examples 6 and 7, it was found that when the stretched active layer is provided, the above effect is remarkably improved as compared with the case where the stretched active layer is not stretched.

[Examples 6 to 11]
(Manufacture of transistors)
In the production of the stretched laminate of (2), instead of poly (3-hexylthiophene), poly (3-octylthiophene) is used, and the laminate 205 is uniaxially stretched 3.5 times and heated. The transistors of Examples 6 to 11 were manufactured in the same manner as Example 1 except that was set to 1 hour. In Examples 6 to 11, the poly (3-hexylthiophene) film 208 having various thicknesses was formed by changing the concentration of the chloroform solution of poly (3-octylthiophene) used for forming the stacked body 5. As a result, various transistors having active layers 220 having different thicknesses were obtained.

(Measurement of IV characteristics)
For each transistor obtained, the transistor characteristics are measured by applying the silicon substrate 201 as a gate electrode, applying a gate voltage V _G of +40 to −40 V, and a source-drain voltage V _SD of −40 V in a nitrogen atmosphere. The mobility was calculated from the obtained IV characteristics. The obtained results are shown in Table 3 together with the film thickness of the active layer 220 in the transistor of each example.

  From Table 3, it was found that the higher the thickness of the active layer, the higher the mobility.

  From the above, a transistor having high transistor mobility and excellent transistor characteristics can be obtained by imparting orientation to a semiconductor film and attaching the semiconductor film to an adjacent layer while heating and / or pressing. confirmed.

1 is a schematic cross-sectional view of a transistor according to a first embodiment. It is a schematic cross section of a transistor according to a second embodiment. It is a schematic cross section of a transistor according to a third embodiment. It is a schematic cross section of a transistor according to a fourth embodiment. It is a schematic cross section of a transistor according to a fifth embodiment. It is a schematic cross section of a transistor according to a sixth embodiment. It is process drawing which shows the manufacturing method of the transistor which concerns on 1st Embodiment. It is process drawing which shows the manufacturing method of the transistor which concerns on 2nd Embodiment. It is process drawing which shows the manufacturing method of the transistor which concerns on 3rd Embodiment. It is process drawing which shows the manufacturing method of the transistor which concerns on 4th Embodiment. It is process drawing which shows the manufacturing method of the transistor which concerns on 5th Embodiment. It is process drawing which shows the manufacturing method of the transistor which concerns on 5th Embodiment. It is process drawing which shows the manufacturing method of the transistor which concerns on 6th Embodiment. It is process drawing which shows the manufacturing method of the transistor which concerns on 6th Embodiment. It is a figure which shows the manufacturing process of the transistor of Examples 1-3. It is a figure which shows a part of manufacturing process of the transistor of Comparative Examples 2-5. 6 is a schematic cross-sectional view of a transistor obtained in Example 4. FIG. 10 is a diagram illustrating a part of the manufacturing process of the transistor of Example 6. FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 9 ... Construction liquid, 10 ... Substrate, 12 ... Gate electrode, 14 ... Insulating layer, 16 ... Source electrode, 18 ... Drain electrode, 20, 24 ... Active layer, 22, 26 ... Semiconductor film, 30, 32, 34, 64 ... element substrate 36, 38 ... first element substrate, 40 ... construction liquid, 50 ... laminate, 52 ... support film, 60, 62 ... second element substrate, 100, 105, 110, 115, 120, 125 , 200, 210, 300 ... transistor, 201 ... n-type silicon substrate, 203 ... insulating layer, 204a ... source electrode, 204b ... drain electrode, 205 ... laminated body, 206,216 ... element substrate, 207 ... support film , 208 ... poly (3-hexylthiophene) film, 215 ... stretched laminate, 217 ... support film after stretching, 218 ... poly (3-hexylthiophene) film after stretching, 220 ... Active layer after stretching, 228... Unstretched active layer, 500... 4- (trifluoromethyl) thiophenol layer.

Claims (19)

A method of manufacturing a transistor having an active layer made of a semiconductor film containing an organic semiconductor compound,
Stretching the semiconductor film;
Bonding the semiconductor film to the surface on which the active layer is to be formed while applying heat and / or pressure to obtain the active layer;
A method for manufacturing a transistor, comprising: A method of manufacturing a transistor having an active layer made of a semiconductor film containing an organic semiconductor compound,
Orienting the semiconductor film;
Bonding the semiconductor film to the surface on which the active layer is to be formed while applying heat and / or pressure to obtain the active layer;
A method for manufacturing a transistor, comprising: A method of manufacturing a transistor having an active layer made of a semiconductor film containing an organic semiconductor compound,
Stretching and orienting the semiconductor film; and
Bonding the semiconductor film to the surface on which the active layer is to be formed while applying heat and / or pressure to obtain the active layer;
A method for manufacturing a transistor, comprising:   The manufacturing method of the transistor as described in any one of Claims 1-3 which attaches the said semiconductor film to the said surface by interposing a construction liquid between the said surfaces. A source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound that becomes a current path between them, a gate electrode that controls a current passing through the current path, and a gap between the active layer and the gate electrode A method of manufacturing a transistor having an insulating layer disposed,
Stretching the semiconductor film;
Bonding the semiconductor film with the insulating layer while heating and / or pressing to obtain the active layer;
A method for manufacturing a transistor, comprising: A source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound that becomes a current path between them, a gate electrode that controls a current passing through the current path, and a gap between the active layer and the gate electrode A method of manufacturing a transistor having an insulating layer disposed,
Orienting the semiconductor film;
Bonding the semiconductor film with the insulating layer while heating and / or pressing to obtain the active layer;
A method for manufacturing a transistor, comprising: A source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound that becomes a current path between them, a gate electrode that controls a current passing through the current path, and a gap between the active layer and the gate electrode A method of manufacturing a transistor having an insulating layer disposed,
Stretching and orienting the semiconductor film; and
Bonding the semiconductor film with the insulating layer while heating and / or pressing to obtain the active layer;
A method for manufacturing a transistor, comprising:   The method for manufacturing a transistor according to claim 5, wherein the semiconductor film is bonded to the insulating layer with a working liquid interposed between the insulating film and the insulating layer.   9. The transistor according to claim 5, wherein the transistor includes a layer made of a compound different from the organic semiconductor compound between the source electrode and / or the drain electrode and the active layer. The manufacturing method of the transistor of description. A transistor having an active layer made of a semiconductor film containing an organic semiconductor compound,
The active layer is formed of the stretched semiconductor film, and the semiconductor film is formed by being attached to a surface on which the active layer is formed while being heated and / or pressurized. A transistor having an active layer made of a semiconductor film containing an organic semiconductor compound,
The active layer is formed of the oriented semiconductor film, and the semiconductor film is formed by being attached to a surface on which the active layer is formed while being heated and / or pressurized. A transistor having an active layer made of a semiconductor film containing an organic semiconductor compound,
The active layer is formed of the semiconductor film oriented by stretching, and the semiconductor film is formed by being bonded to a surface on which the active layer is formed while being heated and / or pressurized. , Transistor.   13. The active layer according to claim 10, wherein the semiconductor film is formed by being attached to the surface in a state where a working liquid is interposed between the active layer and the surface. Transistor. A source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound that becomes a current path between them, a gate electrode that controls a current passing through the current path, and a gap between the active layer and the gate electrode Having an insulating layer disposed;
The active layer is formed of the stretched semiconductor film, and is formed by bonding the semiconductor film to the insulating layer while heating and / or pressing. A source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound that becomes a current path between them, a gate electrode that controls a current passing through the current path, and a gap between the active layer and the gate electrode Having an insulating layer disposed;
The active layer is composed of the oriented semiconductor film, and is formed by bonding the semiconductor film to the insulating layer while heating and / or pressurizing. A source electrode and a drain electrode, an active layer made of a semiconductor film including an organic semiconductor compound that becomes a current path between them, a gate electrode that controls a current passing through the current path, and a gap between the active layer and the gate electrode Having an insulating layer disposed;
The transistor is composed of the semiconductor film oriented by stretching, and is formed by bonding the semiconductor film to the insulating layer while being heated and / or pressurized.   17. The active layer according to claim 14, wherein the semiconductor film is formed by being bonded to the insulating layer in a state where a working liquid is interposed between the semiconductor film and the insulating layer. The transistor described.   The transistor according to any one of claims 14 to 17, further comprising a layer made of a compound different from the organic semiconductor compound between the source electrode and / or the drain electrode and the active layer.   A semiconductor device comprising the transistor according to claim 10.

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