CN116376408A - Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film - Google Patents

Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film Download PDF

Info

Publication number
CN116376408A
CN116376408A CN202310088394.XA CN202310088394A CN116376408A CN 116376408 A CN116376408 A CN 116376408A CN 202310088394 A CN202310088394 A CN 202310088394A CN 116376408 A CN116376408 A CN 116376408A
Authority
CN
China
Prior art keywords
silicon wafer
high molecular
polymer chain
organic polymer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310088394.XA
Other languages
Chinese (zh)
Inventor
孙华斌
丁佳瀚
许智奇
吴洁
陈子龙
于志浩
徐勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University of Posts and Telecommunications
Original Assignee
Nanjing University of Posts and Telecommunications
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University of Posts and Telecommunications filed Critical Nanjing University of Posts and Telecommunications
Priority to CN202310088394.XA priority Critical patent/CN116376408A/en
Publication of CN116376408A publication Critical patent/CN116376408A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/10—Homopolymers or copolymers of methacrylic acid esters
    • C09D133/12—Homopolymers or copolymers of methyl methacrylate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses a consistent high molecular organic polymer chain oriented film and a preparation method of a transistor based on the film, which relate to the field of semiconductor device physics. The consistent high molecular oriented film effectively improves the mobility of the organic field effect transistor, and reduces the subthreshold swing. Meanwhile, the mobility convergence of the organic field effect transistor is greatly improved by adopting the protection method of the consistent high molecular organic polymer chain, and the performance consistency of the transistor is more obvious.

Description

Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film
Technical Field
The invention relates to the field of semiconductor device physics, in particular to a consistent high molecular organic polymer chain oriented film and a preparation method of a transistor based on the film.
Background
An organic field effect transistor is a field effect transistor having an organic semiconductor material as a semiconductor layer. Since the end of the 20 th century organic semiconductor material was used as an active layer material for organic field effect transistors, the problem of lower carrier mobility has been faced. This is due to the fact that organic molecules are connected to each other by van der Waals forces, the band gap is wide, and carrier transport is affected by complex surface states and disorder, and a high barrier height. Research into organic semiconductor layers has been a major concern for improving carrier mobility.
With continuous research on organic field effect transistors, it can be found that the direction of the polymer chains and the length of the polymer chains may affect the electrical properties of the organic field effect transistors. The preparation of a uniform polymer orientation film similar to an inorganic alignment may have a positive effect on improving the performance of an organic field effect transistor. The Langmuir-Blodgett process prepares an organic semiconductor layer with a certain direction by preparing the organic semiconductor layer on the device in a consistent direction by means of pulling. This allows it to form an organic thin film resembling the crystalline order of inorganic semiconductors to some extent. The mobility of the organic semiconductor device during operation is improved. However, after a series of subsequent operations such as thermal annealing, the organic polymer chains are broken in connection with van der Waals forces due to high temperature and the like, so that the uniformity thereof is lowered.
The invention patent CN114300616A provides an integrated power device based on a copolymer organic semiconductor, which is prepared by adopting a solution spin coating and annealing method. However, this method does not solve the problem of alignment of the polymer orientation of the thin film during annealing.
Therefore, how to prepare a film with consistent polymer orientation, and provide a method for protecting a film with consistent polymer orientation prepared by Langmuir-Blodgett process, is a problem to be solved in the art.
Disclosure of Invention
In view of the above, the invention provides a method for preparing and protecting an organic consistent polymer oriented film, which realizes the preparation of an organic consistent polymer oriented film device, and provides a protection mode for the prepared organic film oriented arrangement polymer chains, so that the arrangement of the organic polymer chains can be prevented from being disturbed to a certain extent in a high-temperature annealing environment. Fills the blank that the organic semiconductor polymer chains in the industry are irregular and the arrangement mode of the organic polymer chains can not be effectively protected.
In order to achieve the above purpose, the present invention adopts the following scheme:
preparing a solution:
taking DPPT-TT samples with corresponding proportions by using a cleaned medicine spoon, taking PMMA sample powder with a certain proportion again, placing the PMMA sample powder in a clean glass bottle, and injecting solvent DCB with corresponding proportions into the glass bottle in a nitrogen environment. The concentration ratio is 5mg/2mg/1ml for example. The solution was heated and dissolved on a heating table at 80 ℃ for 24 hours to prepare an organic semiconductor solution for use.
Preparation before pulling and coating:
take out the belt with SiO 2 Cutting the silicon wafer into square shapes with the size of the bottle mouth. Cleaning silicon wafer, placing in beaker filled with absolute ethanol and deionized water, ultrasonic cleaning with absolute ethanol for 20min, and ultrasonic cleaning with deionized waterCleaning for 20min, ultrasonically cleaning with absolute ethyl alcohol for 20min, taking out, drying the silicon wafer by nitrogen, placing on a heating table at 100 ℃ for heating for 30min, drying, treating for 300s by using plasma, and finally cleaning for 30min by using UV ozone.
Cleaning tweezers for clamping silicon chips, placing the tweezers in a beaker with absolute ethyl alcohol and deionized water for cleaning, ultrasonically cleaning the tweezers with the absolute ethyl alcohol for 20min, ultrasonically cleaning the tweezers with the deionized water for 20min, ultrasonically cleaning the tweezers with the absolute ethyl alcohol for 20min, drying the tweezers by a nitrogen gun, and heating the tweezers on a heating table at 80 ℃ for 30min to dry the tweezers. Binding the upper end of the forceps with the epithelial tendon for standby.
Taking out the prepared solution for standby, and carrying out parameter setting on a lifting instrument, wherein the dipping speed is set to be 12mm/min, the lifting speed is set to be 12mm/min, the dipping time is 100s, the lifting interval is 300s, the dipping height is consistent with the liquid level, and the lifting height is consistent with the sum of the liquid level and the silicon wafer width. The dipping height is determined by the height of the preparation solution and is generally 25mm. The height of the pulling is determined according to the size of the cut silicon wafer, and is generally 43mm.
And (3) a lifting and film plating process:
the cleaned silicon wafer is clamped by tweezers, the cleaned silicon wafer is fixed by rubber bands prepared in advance, the tweezers are arranged in a clamp of a lifting instrument, a solution bottle opening is aligned to the lifting direction of the silicon wafer, the lifting and coating of the silicon wafer are started by a starting instrument, and the film thickness of an organic semiconductor layer can be increased by multiple lifting, so that the expected film thickness of a device is prepared.
And rapidly transferring the pulled-up wafer to a heating table for pre-annealing, wherein the heating table is set at 80 ℃ and the annealing time is 5min, and then transferring the pre-annealed wafer to a glove box nitrogen environment for continuous annealing, wherein the annealing temperature is 150 ℃ and the annealing time is 60min. And taking the sheet off after the annealing is finished, and cooling for standby.
Preparing a source electrode and a drain electrode:
the method comprises the steps of placing a silicon wafer with a film prepared on an object stage of an evaporation instrument, washing and drying a mask plate by absolute ethyl alcohol and deionized water, covering the mask plate on the surface of a semiconductor film, fixing the mask plate by utilizing magnetic force, placing the mask plate on a bracket of the evaporation instrument, closing a cabin door, pumping vacuum to 5E-4Pa, slowly adjusting a knob to perform power adjustment, slowly rotating a sample, evaporating a source drain electrode at a speed of 0.2A/s, and closing a sample baffle when the evaporating thickness is 50 nm. And slowly reducing the power to finish evaporation.
Device separation:
and separating a plurality of independent organic devices prepared on one silicon wafer by using tweezers, and dividing organic semiconductor layers among the devices to enable the devices to be in independent working states, so that the preparation of the polymer oriented thin film transistor is completed.
In general, compared with devices prepared by the existing spin coating process, the organic active layer polymer chains have a certain ordered arrangement, and the addition of PMMA is helpful for protecting the ordered arrangement of the polymer chains, so that the ordered arrangement of the polymer chains of the organic semiconductor layer is not easily damaged under the conditions of high temperature and the like, and the parallel arrangement of the polymer chains relative to the channel direction between the source and the drain is beneficial for improving a series of electrical properties such as carrier mobility of the organic transistor.
According to the invention, the organic transistor film is prepared by changing the film forming method of the organic active layer and utilizing the Langmuir-Blodgett process, so that the influence of anisotropy of the organic active layer is reduced, and the carrier mobility of the organic field effect transistor is improved.
The invention also provides a protection method for the prepared consistent high molecular orientation film, and changes the mode of connecting organic polymer chains by virtue of Van der Waals force by adding low-concentration PMMA, so that the ordering is more stable, and the consistency of the polymer chains can be effectively maintained in high temperature and other environments. Realizes the preparation and protection of the consistent high molecular oriented film.
Drawings
FIG. 1 is a Raman spectrum of an organic consistent polymer oriented film prepared by pulling after annealing at 80 ℃ and 150 ℃.
FIG. 2 is a graph of Raman spectra of unprotected and protected organic semiconductor films before and after annealing at 80℃and 150 ℃.
Fig. 3 is an IV performance curve of an organic thin film transistor prepared by forming organic semiconductor thin films in different directions.
Fig. 4 is a graph showing mobility bins of devices fabricated in different directions with a channel length of 300 μm, measured before and after PMMA doping protection.
Fig. 5 is a schematic diagram of a thin film transistor with uniform polymer orientation.
Wherein 1 is an electrode, 2 is an organic layer, 3 is a dielectric layer, and 4 is a gate electrode.
Detailed Description
The invention is described in further detail below in connection with the following detailed description: the protection method of the organic polymer chains of the consistent high molecular oriented film comprises the following process flows:
preparing a solution:
taking DPPT-TT samples with corresponding proportions by using a cleaned medicine spoon, taking PMMA sample powder with a certain proportion again, placing the PMMA sample powder in a clean glass bottle, and injecting DCB solvent with corresponding proportions into the glass bottle in a nitrogen environment. The concentration ratio is 5mg/2mg/1ml for example. The solution was heated and dissolved on a heating table at 80 ℃ for 24 hours to prepare an organic semiconductor solution for use.
Preparation before pulling and coating:
take out the belt with SiO 2 Cutting the silicon wafer into square shapes with the size of the bottle mouth. Cleaning a silicon wafer, placing the silicon wafer in a beaker filled with absolute ethyl alcohol and deionized water for ultrasonic cleaning, carrying out ultrasonic cleaning on the absolute ethyl alcohol for 20min, carrying out ultrasonic cleaning on the deionized water for 20min, taking out the silicon wafer, drying the silicon wafer by nitrogen, placing the silicon wafer on a heating table at 100 ℃ for heating for 30min, drying the silicon wafer, treating the silicon wafer by using plasma for 300s, and finally cleaning the silicon wafer by using UV ozone for 30min.
Cleaning tweezers for clamping silicon chips, placing the tweezers in a beaker with absolute ethyl alcohol and deionized water for cleaning, ultrasonically cleaning the tweezers with the absolute ethyl alcohol for 20min, ultrasonically cleaning the tweezers with the deionized water for 20min, ultrasonically cleaning the tweezers with the absolute ethyl alcohol for 20min, drying the tweezers by a nitrogen gun, and heating the tweezers on a heating table at 80 ℃ for 30min to dry the tweezers. Binding the upper end of the forceps with the epithelial tendon for standby.
Taking out the prepared solution for standby, and performing parameter setting on a lifting instrument, wherein the dipping speed is set to be 12mm/min, the lifting speed is set to be 12mm/min, the dipping time is 100s, the lifting interval is 300s, and the dipping height is determined according to the height of the prepared solution, and is generally 25mm. The Tara height is determined by the size of the cut wafer and is typically 43mm.
And (3) a lifting and film plating process:
the cleaned silicon wafer is clamped by tweezers, the cleaned silicon wafer is fixed by rubber bands prepared in advance, the tweezers are arranged in a clamp of a lifting instrument, a solution bottle opening is aligned to the lifting direction of the silicon wafer, the lifting and coating of the silicon wafer are started by a starting instrument, and the film thickness of an organic semiconductor layer can be increased by multiple lifting, so that the expected film thickness of a device is prepared.
And rapidly transferring the pulled-up wafer to a heating table for pre-annealing, wherein the heating table is set at 80 ℃ and the annealing time is 5min, and then transferring the pre-annealed wafer to a glove box nitrogen environment for continuous annealing, wherein the annealing temperature is 150 ℃ and the annealing time is 60min. And taking the sheet off after the annealing is finished, and cooling for standby.
Preparing a source electrode and a drain electrode:
the method comprises the steps of placing a silicon wafer with a film prepared on an object stage of an evaporation instrument, washing and drying a mask plate by absolute ethyl alcohol and deionized water, covering the mask plate on the surface of a semiconductor film, fixing the mask plate by utilizing magnetic force, placing the mask plate on a bracket of the evaporation instrument, closing a cabin door, pumping vacuum to 5E-4Pa, slowly adjusting a knob to perform power adjustment, slowly rotating a sample, evaporating a source drain electrode at a speed of 0.2A/s, and closing a sample baffle when the evaporating thickness is 50 nm. And slowly reducing the power to finish evaporation.
Device separation:
and separating a plurality of independent organic devices prepared on one silicon wafer by using tweezers, and dividing organic semiconductor layers among the devices to enable the devices to be in independent working states, so that the preparation of the polymer oriented thin film transistor is completed. The preparation of the whole device is completed, and the organic polymer chain of the film with consistent high molecular orientation is protected. The finished device with the polymer chains of the protective organic film oriented as shown in FIG. 5Wherein 1 is the source electrode and the drain electrode of the organic field effect transistor, 2 is the organic semiconductor layer, the patent takes DPPT-TT as an example, 3 is the gate medium of the organic field effect transistor, and SiO is used for preparing the semiconductor device 2 The layer is used as an insulating layer, and 4 is the grid electrode of the organic field effect transistor. When the device is operated in the saturation region, 0V is applied to the source, 60V is applied to the drain, and 60V is applied to the gate. It is electrically tested.
As shown in FIG. 1, the Raman spectrum of the undoped PMMA-protected organic consistent polymer oriented film prepared by pulling and annealing at 80 ℃ and 150 ℃ can be seen, the Raman peak intensity of the organic semiconductor film prepared by the Langmuir-Blodgett process is reduced under polarized light after high-temperature annealing, which indicates that the polymer chains of the organic semiconductor film formed by the process have orientation consistency, and the high-temperature annealing can lead to reduced order.
FIG. 2 is a graph of Raman spectra of an undoped PMMA-protected and doped PMMA-protected organic semiconductor film before and after annealing at 80 ℃ and 150 ℃, and can show that the Raman peak of the doped PMMA-protected organic consistent polymer oriented film is higher than the intensity of the doped PMMA-protected organic consistent polymer oriented film, which indicates that the DPPT-TT polymer chains of the micro-doped PMMA are higher in order degree, the influence of high-temperature annealing on the order degree of the DPPT-TT polymer chains after the doped PMMA protection is smaller, and the DPPT-TT polymer chains are obviously protected by PMMA doping.
The IV performance curves of the organic thin film transistor prepared from the organic semiconductor thin films formed in different directions in fig. 3 are compared with the saturation region transfer curves, and it can be seen that the organic thin film transistor prepared along the channel direction can still have a better saturation region transfer curve and a higher saturation current than other directions under the protection of undoped PMMA, that is, it is shown that the uniformity of the polymer chain along the channel direction has a positive effect on the device performance.
Fig. 4 is a graph of mobility bins measured before and after PMMA doping protection of devices formed in different directions when the channel length is 300 μm, and it can be seen that the mobility of the devices prepared by the polymer chains parallel to the channel direction is higher than that of the devices prepared by the vertical preparation, meanwhile, the mobility range of the organic field effect transistor prepared by PMMA protection is more convergent, the uniformity of the devices is higher, and the devices prepared and protected by the method have better performance in mobility and other aspects.
The foregoing preferred embodiments of the present invention are not limited to the scope of the present invention, and various modifications or applications according to the foregoing embodiments are within the scope of the present invention.

Claims (7)

1. The preparation method of the consistent high molecular organic polymer chain oriented film comprises the following steps:
(1) Preparing a solution:
taking DPPT-TT and PMMA powder, placing the DPPT-TT and PMMA powder into a glass bottle, injecting a solvent DCB into the glass bottle under a nitrogen environment, and placing the glass bottle and the solvent DCB on a heating table for heating and dissolving to prepare an organic semiconductor solution;
(2) Preparation:
cutting a silicon wafer with silicon dioxide into square shapes with the size of a bottle mouth; sequentially carrying out absolute ethyl alcohol ultrasonic cleaning and deionized water ultrasonic cleaning on the silicon wafer, carrying out absolute ethyl alcohol ultrasonic cleaning, drying the silicon wafer by nitrogen, placing the silicon wafer on a heating table for heating and drying, carrying out plasma treatment, and finally carrying out UV ozone cleaning;
sequentially carrying out absolute ethyl alcohol ultrasonic cleaning on tweezers for clamping the silicon wafer, deionized water ultrasonic cleaning, absolute ethyl alcohol ultrasonic cleaning, blow-drying by a nitrogen gun, and heating and drying on a heating table;
(3) Lifting and plating a film:
clamping and fixing the cleaned silicon wafer by using tweezers, installing the tweezers in a clamp of a pulling instrument, aligning the bottleneck of the organic semiconductor solution with the pulling direction of the silicon wafer, and using the pulling instrument for dipping and pulling;
transferring the pulled silicon wafer to a heating table for pre-annealing, setting the heating table to 80 ℃, and the annealing time to be 5min, transferring the pre-annealed silicon wafer to a nitrogen environment for continuous annealing, wherein the annealing temperature is 150 ℃, the annealing time is 60min, and taking down the silicon wafer for cooling after the annealing is completed.
2. The method for producing a uniform high molecular weight organic polymer chain oriented film according to claim 1, wherein the concentration ratio of DPPT-TT, PMMA and solvent DCB is 5mg/2mg/1ml.
3. The method for producing a consistent macromolecular organic polymer chain oriented film according to claim 1, wherein the speed of impregnation is 12mm/min, the speed of pulling is 12mm/min, the impregnation time is 100s, and the pulling interval is 300s.
4. The method for producing a uniform high molecular weight organic polymer chain oriented film according to claim 3, wherein the immersed height is uniform with the liquid level height, and the pulled height is uniform with the sum of the liquid level height and the width of the silicon wafer.
5. The method for producing a uniform high molecular weight organic polymer chain oriented film according to claim 1, wherein the dipping and pulling are performed several times to increase the film thickness of the organic semiconductor layer.
6. A method for producing a transistor based on a uniform high molecular organic polymer chain oriented film, characterized by using the uniform high molecular organic polymer chain oriented film according to any one of claims 1 to 4, comprising the steps of:
(1) Preparing a source electrode and a drain electrode:
placing a silicon wafer with the film prepared on an object stage of an evaporation instrument, cleaning and drying a mask plate by using absolute ethyl alcohol and deionized water, covering the mask plate on the surface of a semiconductor film, fixing the mask plate by using magnetic force, placing the mask plate on a bracket of the evaporation instrument, closing a cabin door, pumping vacuum degree to 5E-4Pa, slowly rotating a sample, evaporating a source electrode and a drain electrode at a speed of 0.2A/s, closing a sample baffle plate when the evaporating thickness is 50nm, and completing evaporation;
(2) Device separation:
and separating a plurality of independent organic devices prepared on the silicon wafer by using tweezers, and separating organic semiconductor layers among the devices to enable the devices to be in independent working states.
7. The method for manufacturing a transistor based on a consistent high molecular weight organic polymer chain oriented thin film according to claim 6, wherein the source and drain electrodes are gold vapor deposited source and drain electrodes with a thickness of 50 nm.
CN202310088394.XA 2023-02-09 2023-02-09 Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film Pending CN116376408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310088394.XA CN116376408A (en) 2023-02-09 2023-02-09 Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310088394.XA CN116376408A (en) 2023-02-09 2023-02-09 Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film

Publications (1)

Publication Number Publication Date
CN116376408A true CN116376408A (en) 2023-07-04

Family

ID=86960452

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310088394.XA Pending CN116376408A (en) 2023-02-09 2023-02-09 Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film

Country Status (1)

Country Link
CN (1) CN116376408A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094107A (en) * 1999-09-20 2001-04-06 Hitachi Ltd Organic semiconductor device and liquid crystal display device
JP2007096288A (en) * 2005-08-31 2007-04-12 Sumitomo Chemical Co Ltd Transistor and method of manufacturing same, and semiconductor device having the same
CN113540352A (en) * 2021-06-18 2021-10-22 吉林大学 Method for preparing organic crystal film by combining solution processing and vacuum evaporation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001094107A (en) * 1999-09-20 2001-04-06 Hitachi Ltd Organic semiconductor device and liquid crystal display device
JP2007096288A (en) * 2005-08-31 2007-04-12 Sumitomo Chemical Co Ltd Transistor and method of manufacturing same, and semiconductor device having the same
CN113540352A (en) * 2021-06-18 2021-10-22 吉林大学 Method for preparing organic crystal film by combining solution processing and vacuum evaporation

Similar Documents

Publication Publication Date Title
CN107195781B (en) PMMA-doped small molecule-based high-mobility transistor and preparation method thereof
CN107170893B (en) Two-dimensional semiconductor energy band structure regulated and controlled by polarized electric field and preparation method
Wei et al. High mobility solution-processed C 8-BTBT organic thin-film transistors via UV-ozone interface modification
CN1182570C (en) Method for manufacturing field effect transistor
US9171961B2 (en) Coating materials for oxide thin film transistors
CN108101381A (en) A kind of bismuthino halide perovskite nanometer sheet and preparation method thereof
CN103258960A (en) Preparation method of organic thin film transistor
Peng et al. A Transfer Method for High‐Mobility, Bias‐Stable, and Flexible Organic Field‐Effect Transistors
Yan et al. Shear-Enhanced Stretchable Polymer Semiconducting Blends for Polymer-based Field-Effect Transistors
CN110034192B (en) Gallium oxide field effect transistor for regulating threshold voltage by stannous oxide and preparation method thereof
CN207009481U (en) A kind of polarized electric field regulates and controls two-dimensional semiconductor band structure
CN116376408A (en) Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film
Zhang et al. High-performance thin film transistors from semiconducting liquid crystalline phases by solution processes
Zhang et al. Improvement in the electrical properties of a-IGZO TFTs by using PA-PI as a modification layer
JP2001506809A (en) Semiconductor device and manufacturing method thereof
Yang et al. Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors
Licoppe et al. A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications
Hiramatsu et al. Effect of pulsed substrate bias on film properties of SiO2 deposited by inductively coupled plasma chemical vapor deposition
Stott et al. Bottom-contact pentacene thin-film transistors on silicon nitride
CN113782565B (en) Bulk heterojunction organic field effect transistor memory and preparation method thereof
KR101720425B1 (en) Method for forming semiconducting polymer thin films using spin coating techniques
Ma et al. NdxHf (1− x) ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors
Hoang et al. Silicon-doped indium oxide–a promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method
Wang et al. Using phosphorus-doped α-Si gettering layers to improve NILC Poly-Si TFT performance
KR102164284B1 (en) Organic single crystal and manufacturing method thereof, and method of manufacturing organic transistor

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination